Gotowe bibliografie tematyczne / TCAD TOOL

Spis treści

  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Części książek
  4. Streszczenia konferencji

Gotowa bibliografia na temat „TCAD TOOL”

Autor: Grafiati
Data publikacji: 11 września 2023

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „TCAD TOOL”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "TCAD TOOL"

1

Lee, YongJae. "Simulations of Proposed Shallow Trench Isolation using TCAD Tool." Journal of the Korea Society for Simulation 22, no. 4 (2013): 93–98. http://dx.doi.org/10.9709/jkss.2013.22.4.093.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Landowski, Matthew M., and Z. John Shen. "TCAD Based Power Semiconductor Device e-Learning Tool." Journal of Power Electronics 10, no. 6 (2010): 643–46. http://dx.doi.org/10.6113/jpe.2010.10.6.643.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Sakai, Atsushi, Katsumi Eikyu, Kenichi Hisada, et al. "Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization." Materials Science Forum 963 (July 2019): 609–12. http://dx.doi.org/10.4028/www.scientific.net/msf.963.609.

Pełny tekst źródła
Streszczenie:
The effective modeling methodology of 4H-SiC trench gate MOSFETs is presented. The potential barrier lowering at the MOS channel region suggested by I-V measurements is implemented to commercial TCAD tool as the net-doping reduction. The proposed model is validated by comparison of TCAD simulations with I-V measurements and SEM image observations.
Style APA, Harvard, Vancouver, ISO itp.
4

Ruey-Sing Wei and A. Sangiovanni-Vincentelli. "PLATYPUS: A PLA Test Pattern Generation Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 5, no. 4 (1986): 633–44. http://dx.doi.org/10.1109/tcad.1986.1270233.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Hongmei Li, C. E. Zemke, G. Manetas, V. I. Okhmatovski, E. Rosenbaum, and A. C. Cangellaris. "An automated and efficient substrate noise analysis tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 3 (2006): 454–68. http://dx.doi.org/10.1109/tcad.2005.854628.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Riente, Fabrizio, Giovanna Turvani, Marco Vacca, Massimo Ruo Roch, Maurizio Zamboni, and Mariagrazia Graziano. "ToPoliNano: A CAD Tool for Nano Magnetic Logic." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 36, no. 7 (2017): 1061–74. http://dx.doi.org/10.1109/tcad.2017.2650983.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Oikonomakos, P., and M. Zwolinski. "An Integrated High-Level On-Line Test Synthesis Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 11 (2006): 2479–91. http://dx.doi.org/10.1109/tcad.2006.882120.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Tulunay, GÜlin, and Sina Balkir. "A Synthesis Tool for CMOS RF Low-Noise Amplifiers." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27, no. 5 (2008): 977–82. http://dx.doi.org/10.1109/tcad.2008.917579.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Abderehman, Mohammed, Rupak Gupta, Rakesh Reddy Theegala, and Chandan Karfa. "BLAST: Belling the Black-Hat High-Level Synthesis Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 41, no. 11 (2022): 3661–72. http://dx.doi.org/10.1109/tcad.2022.3200513.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Kuznetsov, Maksim, Sergey Kalinin, Alexey Cherkaev, and Dmitriy Ostertak. "Investigating physical model interface in the TCAD Sentaurus environment." Transaction of Scientific Papers of the Novosibirsk State Technical University, no. 3 (November 18, 2020): 39–48. http://dx.doi.org/10.17212/2307-6879-2020-3-39-48.

Pełny tekst źródła
Streszczenie:
Currently, the application SDevice software package TCAD Sentaurus is a reliable tool for electrophysical simulation of silicon CMOS transistors operating in the temperature range of -60 °C – +125 °C. To adapt the modeling process to specific physical conditions of the devices, application SDevice has an extensive library of models of electrophysical parameters, in particular models of mobility or band gap energy. However, when the device operates under extreme cryogenic conditions, there is a need to rework these models using a special Physical Model Interface (PMI). The paper presents method
Style APA, Harvard, Vancouver, ISO itp.

Rozprawy doktorskie na temat "TCAD TOOL"

1

Henseler, Rebecca Anne. "Modulation of the 3'IgH Regulatory Region (3'IgH RR), a prospective in vitro screening tool for identifying potential immunotoxicants." Wright State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=wright1196883435.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Rosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.

Pełny tekst źródła
Streszczenie:
Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évalu
Style APA, Harvard, Vancouver, ISO itp.
3

Navarro, González María del Carmen. "Caenorhabditis elegans as a research tool to study mitochondrial diseases associated with defects in tRNA modification." Doctoral thesis, Universitat Politècnica de València, 2016. http://hdl.handle.net/10251/61978.

Pełny tekst źródła
Streszczenie:
[EN] Post-transcriptional modification of the wobble uridine (U34) of a tRNA set is an evolutionary conserved process, produced by homologous proteins from the MnmA/MTU1, MnmE/GTPBP3 and MnmG/MTO1 families. Mutations in the human genes MTU1 and GTPBP3 or MTO1 produce acute infantile liver failure, and hypertrophic cardiomyopathy and lactic acidosis, respectively, which usually cause lethality in the first months of life. It is assumed that the primary cause of these diseases is the lack of the modifications introduced by the MTU1 protein in position 2 (tiol) and GTPBP3 and MTO1 proteins (tauri
Style APA, Harvard, Vancouver, ISO itp.
4

Salisbury, Richard L. Jr. "TCDD represses 3'IghRR activation through an AhR-dependent shift in the NF-κB/Rel protein complexes binding to κB motifs within the hs1,2 and hs4 enhancers". Wright State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=wright1401136335.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

SINGH, DIVYANSH. "IMPLEMENTATION OF NANOWIRE RECONFIGURABLE FET AS A BIOSENSOR WITH IMPROVED SENSITIVITY." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19878.

Pełny tekst źródła
Streszczenie:
Reconfigurable FET can be used as both p type and n type as per the requirement by applying voltage to the electrodes accordingly. Nanowire RFET has got a structure with two gates, one acting for the biasing and the other for current control (that is ON or OFF). The structure is like Nanowire heterostructure. The technique used here is dielectric modulation and based on that the variation in threshold voltage related sensitivity. These find major applications in Programmable Logic Arrays since can be programmed as p type or n type. The RFET used in this project has been developed a
Style APA, Harvard, Vancouver, ISO itp.
6

Liu, Yu-Chun, and 柳有駿. "Development of Adaptive Fitting Parameters Optimization TCAD Tool for Optoelectronic Device Modeling Based on Artificial Neural Networks." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9n7ar7.

Pełny tekst źródła
Streszczenie:
碩士<br>國立臺灣大學<br>光電工程學研究所<br>106<br>The discovery of highly efficient organic light-emitting-diodes (OLEDs) in the 1980s has attracted extensive attentions on organic semiconductors and devices. However, the accurate physical properties is difficult to be defined clearly. For example, carrier mobility or density of states for organic materials are difficult to be identified correctly. There exist many parameters to be configured out and those parameters are usually controversial in the measurement. With so many possible configurations of parameters, it is very hard for researchers to quickly so
Style APA, Harvard, Vancouver, ISO itp.
7

Hanlon, Paul Robert. "TCDD-mediated inhibition of adipocyte differentiation : using TCDD as a tool to identify molecular mechanisms critical for adipogenesis /." 2003. http://www.library.wisc.edu/databases/connect/dissertations.html.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Części książek na temat "TCAD TOOL"

1

Klimeck, Gerhard. "NEMO 1-D: the first NEGF-based TCAD tool." In Simulation of Semiconductor Processes and Devices 2004. Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_2.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Jayachandran, Remya, Rama S. Komaragiri, and K. J. Dhanaraj. "Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool." In Sub-Micron Semiconductor Devices. CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-11.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Wicha, Santichai, Bernadette Sharp, Anthony S. Atkins, Pradorn Sureephong, and Nopasit Chakpitak. "TCAD: Vocabulary Acquisition Tool for Motivating Bilingual Pupils with Hearing Impairment in Learning English." In Where Humans Meet Machines. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-6934-6_12.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Grace, Jessy, Sphoorthy Bhushan, Chinnam S. V. Maruthi Rao, and Ameet Chavan. "16 nm FinFET Based Radiation Hardened Standard Cell Library Analysis Using Visual TCAD Tool." In Advances in Robotics, Automation and Data Analytics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70917-4_20.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Malavena, Gerardo. "Modeling of GIDL–Assisted Erase in 3–D NAND Flash Memory Arrays and Its Employment in NOR Flash–Based Spiking Neural Networks." In Special Topics in Information Technology. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_4.

Pełny tekst źródła
Streszczenie:
AbstractSince the very first introduction of three-dimensional (3–D) vertical-channel (VC) NAND Flash memory arrays, gate-induced drain leakage (GIDL) current has been suggested as a solution to increase the string channel potential to trigger the erase operation. Thanks to that erase scheme, the memory array can be built directly on the top of a $$n^+$$ n + plate, without requiring any p-doped region to contact the string channel and therefore allowing to simplify the manufacturing process and increase the array integration density. For those reasons, the understanding of the physical phenomena occurring in the string when GIDL is triggered is important for the proper design of the cell structure and of the voltage waveforms adopted during erase. Even though a detailed comprehension of the GIDL phenomenology can be achieved by means of technology computer-aided design (TCAD) simulations, they are usually time and resource consuming, especially when realistic string structures with many word-lines (WLs) are considered. In this chapter, an analysis of the GIDL-assisted erase in 3–D VC nand memory arrays is presented. First, the evolution of the string potential and GIDL current during erase is investigated by means of TCAD simulations; then, a compact model able to reproduce both the string dynamics and the threshold voltage transients with reduced computational effort is presented. The developed compact model is proven to be a valuable tool for the optimization of the array performance during erase assisted by GIDL. Then, the idea of taking advantage of GIDL for the erase operation is exported to the context of spiking neural networks (SNNs) based on NOR Flash memory arrays, which require operational schemes that allow single-cell selectivity during both cell program and cell erase. To overcome the block erase typical of nor Flash memory arrays based on Fowler-Nordheim tunneling, a new erase scheme that triggers GIDL in the NOR Flash cell and exploits hot-hole injection (HHI) at its drain side to accomplish the erase operation is presented. Using that scheme, spike-timing dependent plasticity (STDP) is implemented in a mainstream NOR Flash array and array learning is successfully demonstrated in a prototype SNN. The achieved results represent an important step for the development of large-scale neuromorphic systems based on mature and reliable memory technologies.
Style APA, Harvard, Vancouver, ISO itp.
6

López-Serrano, José, and Andrzej J. Strojwas. "Layout Design Rule Generation with TCAD Tools for Manufacturing." In Simulation of Semiconductor Devices and Processes. Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_14.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Caricato, Anselmo, and Eleonora Stival. "Transcranial Doppler (TCD/TCCD) and Ultrasonography: A Useful Tool in the Aeromedical Transport. What Should We Consider?" In Neurosonology in Critical Care. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81419-9_67.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Ghazli, A., A. Aissat, and J. P. Vilcot. "Simulation of a Silicon Based Solar Cell Using TCAD-Silvaco Tools." In ICREEC 2019. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5444-5_38.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Nanda, R. K., E. Mohapatra, T. P. Dash, et al. "Atomistic Level Process to Device Simulation of GaNFET Using TNL TCAD Tools." In Advances in Electrical Control and Signal Systems. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5262-5_61.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Ditlev-Simonsen, Caroline D. "Key Tools for Social- and Environmental Performance, and the UN Sustainable Development Goals (SDGs)." In A Guide to Sustainable Corporate Responsibility. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-88203-7_4.

Pełny tekst źródła
Streszczenie:
AbstractCorporate responsibility provides the foundation for sustainable development. It is a complex sphere since there are several confusing initiatives intended to help companies incorporate sustainability. From an international perspective, the UN initiatives have had the most impact. I provide a short introduction to the history of key UN initiatives associated with environmental and social issues and how they relate to business and corporations. As the UN Sustainable Development Goals (SDGs) have a key global framework for sustainable development, they will be discussed in detail with special attention to challenges and practical relevance for corporations. Well-known and widely applied initiatives to evaluate corporate performance like Fair Trade Certificate and ISO 14001; greenhouse and climate reporting initiatives, like the GHG Protocol, CDP, TCFD; sustainable reporting frameworks, like GRI and IIRC; and supply chain guidance and due diligence like the OECD Guidelines for Multinational Enterprises, and new laws on transparency, will be presented.
Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "TCAD TOOL"

1

Sanudin, Rahmat, Muhammad Suhaimi Sulong, Marlia Morsin, and Mohd Helmy Abd Wahab. "Simulation study on NMOS gate length variation using TCAD tool." In 2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009). IEEE, 2009. http://dx.doi.org/10.1109/asqed.2009.5206255.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Bahrudin, M. S., S. F. Abdullah, and I. Ahmad. "Statistical modeling of solar cell using Taguchi method and TCAD tool." In 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2012. http://dx.doi.org/10.1109/smelec.2012.6417073.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Pasadas, Francisco, Anibal Pacheco-Sanchez, Nikolaos Mavredakis, and David Jiménez. "Graphene field-effect transistor TCAD tool for circuit design under freeware." In 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD). IEEE, 2023. http://dx.doi.org/10.1109/smacd58065.2023.10192189.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Triltsch, U., and S. Büttgenbach. "TCAD tool for innovative MEMS and MOEMS: an all-in-one solution." In MOEMS-MEMS 2008 Micro and Nanofabrication, edited by Mary-Ann Maher, Jung-Chih Chiao, and Paul J. Resnick. SPIE, 2008. http://dx.doi.org/10.1117/12.773043.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Sahu, Abhijeet, Mamta Khosla, Neetu Sood, and Girish Wadhwa. "Dual-Cavity Triple-Metal Gate-Underlap Dielectric-Modulated Charge-Plasma-based TFET for the Biomolecules Recognition." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.68.

Pełny tekst źródła
Streszczenie:
In this era of technology, biosensors play an essential role in living life. Today’s research and investigation revolved around its higher responsiveness and speed of detection. Normal TFET has many disadvantages like fabrication complexity, random dopant fluctuation, and the lower ON-State current. We are introducing a device that is a Dual-Cavity Triple-Metal gate-underlap DM-CPTFET for label-free detection. This device has a dual cavity for sensing different types of biomolecules simultaneously. We used the tool i.e SILVACO ATLAS TCAD Simulator for the sensing applications. High K material
Style APA, Harvard, Vancouver, ISO itp.
6

Ismail, Muhamad Amri. "Impact of implantation methods on speed and accuracy trade-off in calibrated TCAD tool." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920821.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Martinez, Antonio, Natalia Seoane, Manuel Aldegunde, Asen Asenov, and John R. Barker. "The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology." In 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2011. http://dx.doi.org/10.1109/sispad.2011.6035058.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Gupta, Rahul, Mamta Khosla, and Girish Wadhwa. "Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.69.

Pełny tekst źródła
Streszczenie:
In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV
Style APA, Harvard, Vancouver, ISO itp.
9

Mulder, Randal, Sam Subramanian, and Tony Chrastecky. "Low Voltage, Low Current AFP Characterization of Non-Visible Soft Transistor Defects." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0428.

Pełny tekst źródła
Streszczenie:
Abstract This paper presents case studies that examine low voltage, low current electrical characterization and analysis of data that could help identify root cause failure mechanisms for soft transistor failures, providing a review of Vt shifts and blocked LDD implants review. The case studies demonstrate the importance of getting the most information possible out of all aspects of the nanoprobe electrical characterization results for failing transistors. Technology computer aided design (TCAD) modeling of transistor defects will be a useful tool for the nanoprobe analyst to identify the subt
Style APA, Harvard, Vancouver, ISO itp.
10

Zhang, Kuiyuan, Shohei Kanda, Junki Yamaguchi, Jun Furuta, and Kazutoshi Kobayashi. "Analysis of the soft error rates on 65-nm SOTB and 28-nm UTBB FD-SOI structures by a PHITS-TCAD based simulation tool." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292282.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!

Do bibliografii