Gotowe bibliografie tematyczne / Surface passivation

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji
  6. Raporty organizacyjne

Gotowa bibliografia na temat „Surface passivation”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "Surface passivation"

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Tyagi, Pawan. "GaAs(100) Surface Passivation with Sulfide and Fluoride Ions." MRS Advances 2, no. 51 (2017): 2915–20. http://dx.doi.org/10.1557/adv.2017.380.

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ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passi
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Lee, Hayeon, and Dawen Li. "Surface Passivation to Improve the Performance of Perovskite Solar Cells." Energies 17, no. 21 (2024): 5282. http://dx.doi.org/10.3390/en17215282.

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Perovskite solar cells (PSCs) suffer from a quick efficiency drop after fabrication, partly due to surface defects, and efficiency can be further enhanced with the passivation of surface defects. Herein, surface passivation is reviewed as a method to improve both the stability and efficiency of PSCs, with an emphasis on the chemical mechanism of surface passivation. Various molecules are utilized as surface passivants, such as halides, Lewis acids and bases, amines (some result in low-dimensional perovskite), and polymers. Multifunctional molecules are a promising group of passivants, as they
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Kabalan, Amal. "A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars." Applied Sciences 9, no. 9 (2019): 1804. http://dx.doi.org/10.3390/app9091804.

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Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approache
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Clerix, Jan-Willem J., Golnaz Dianat, Annelies Delabie, and Gregory N. Parsons. "In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 032406. http://dx.doi.org/10.1116/6.0002493.

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Small-molecule inhibitors have recently been introduced for passivation during area-selective deposition (ASD). Small silanes like ( N, N-dimethylamino)trimethylsilane (DMATMS) selectively react with −OH sites on SiO2 to form a less reactive –OSi(CH3)3 terminated surface. The –OSi(CH3)3 surface termination can inhibit many atomic layer deposition (ALD) processes, including TiCl4/H2O ALD. However, the mechanisms by which ALD is inhibited and by which selectivity is eventually lost are not well understood. This study uses in situ Fourier-transform infrared spectroscopy to probe the adsorption of
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Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

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Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation w
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Özeren, Mehmet Derya, Áron Pekker, Katalin Kamarás, and Bea Botka. "Evaluation of surface passivating solvents for single and mixed halide perovskites." RSC Advances 12, no. 44 (2022): 28853–61. http://dx.doi.org/10.1039/d2ra04278a.

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Various surface passivating solvents with different functional groups were used to investigate solvent–perovskite interactions. The identification of the underlying mechanisms provides insight for new surface passivation strategies.
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Vermang, Bart, Aude Rothschild, Karine Kenis, et al. "Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3." Solid State Phenomena 187 (April 2012): 357–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.357.

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Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are ap
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Sioncke, Sonja, Claudia Fleischmann, Dennis Lin, et al. "S-Passivation of the Ge Gate Stack Using (NH4)2S." Solid State Phenomena 187 (April 2012): 23–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.23.

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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserv
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Rajesh, K., L. J. Huang, W. M. Lau, R. Bruce, S. Ingrey, and D. Landheer. "Modification of the GalnAsP(100) surface by oxidation and sulfur passivation." Canadian Journal of Physics 74, S1 (1996): 89–94. http://dx.doi.org/10.1139/p96-839.

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The quaternary III–V compound semiconductor (GaInAsP) is one of the important materials for optoelectronic devices such as long-wavelength semiconductor lasers. Understanding its surface chemistry, which is subjected to oxidation, and sulphur passivation, a widely used passivation technique, is of importance for its use for device fabrication. In this study, modification of the quaternary GaInAsP(100) surfaces was performed by UV/ozone and wet chemical oxidation, dilute HF etching, and sulfur passivation. The surface chemistry and composition of the oxidized, oxide-free, and the sulfur-passiva
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Szuromi, Phil. "Optimizing surface passivation." Science 366, no. 6472 (2019): 1467.5–1467. http://dx.doi.org/10.1126/science.366.6472.1467-e.

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Rozprawy doktorskie na temat "Surface passivation"

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Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.

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Passivation of silicon surfaces remains a critical factor in achieving high conversion efficiency in solar cells, particularly in future generations of rear contact cells -the best performing cell geometry to date. In this thesis, passivation is characterised as either intrinsic or extrinsic, depending on the origin of the chemical and field effect passivation components in dielectric layers. Extrinsic passivation, obtained after film deposition or growth, has been shown to improve significantly the passivation quality of dielectric films. Record passivation has been achieved leading to surfac
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Chang, Wai-Kit. "Porous silicon surface passivation and optical properties." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41426.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.<br>"June 1996."<br>Includes bibliographical references (leaves 84-85).<br>by Wai-Kit Chang.<br>S.M.
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Sun, Shiyu. "Germanium surface cleaning, passivation, and initial oxidation /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Michalak, David Jason Gray Harry B. "Physics and chemistry of silicon surface passivation /." Diss., Pasadena, Calif. : Caltech, 2006. http://resolver.caltech.edu/CaltechETD:etd-05082006-074414.

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Antu, Antara Debnath. "Morphology and Surface Passivation of Colloidal PbS Nanoribbons." Bowling Green State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1499383746861722.

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Benrabah, Sabria. "Passivation des matériaux III-N de type GaN." Thesis, Lyon, 2021. http://www.theses.fr/2021LYSE1310.

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Pour répondre aux demandes de développement de nouveaux produits dans les domaines des convertisseurs électroniques de puissance pour les voitures électriques, des panneaux solaires, des éoliennes et des nouvelles technologies d'éclairage à base de LED ou de composants RF, la recherche s'est concentrée sur les matériaux à large bande interdite directe, dont le nitrure de gallium (GaN). Le GaN a suscité un grand intérêt en raison de ses propriétés exceptionnelles pour les dispositifs électroniques de puissance de la prochaine génération. Avec une vitesse de saturation élevée et une tension de f
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Flynn, Christopher Richard ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Sputtering for silicon photovoltaics: from nanocrystals to surface passivation." Awarded by:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2009. http://handle.unsw.edu.au/1959.4/44686.

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Deposition of thin material films by sputtering is an increasingly common process in the field of silicon (Si)-based photovoltaics. One of the recently developed sputter-deposited materials applicable to Si photovoltaics comprises Si nanocrystals (NCs) embedded in a Si-based dielectric. The particular case of Si nanocrystals in a Silicon Dioxide (SiO2) matrix was studied by fabricating metal-insulator-semiconductor (MIS) devices, in which the insulating layer consists of a single layer of Si NCs in SiO2 deposited by sputtering (Si:NC-MIS devices). These test structures were subjected to impeda
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Pereau, Alban Jean-Joel. "Rear surface passivation for high efficiency silicon solar cells." Thesis, Heriot-Watt University, 2013. http://hdl.handle.net/10399/2828.

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In order to adapt laser grooved buried contact (LGBC) solar cells to a thinner silicon substrate than usually used, we have investigated the reduction of charge carrier loss at the rear surface of p-type silicon wafers by plasma-enhanced chemical vapour deposition (PECVD) of a-Si:H and SiNx films. The efficiency of these passivating films has been measured via the surface recombination velocity (SRV) which is wanted as low as possible. The SRV values of our samples have been compared with the expected theoretical values given by the Shockley-Read Hall (SRH) recombination model. SRH theory is a
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Motahari, Sara. "Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition." Thesis, KTH, Kraft- och värmeteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127430.

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Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggest
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St-Arnaud, Ken. "Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau." Mémoire, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/7723.

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Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et optiques de ce matériau. Les procédés de passivation étudiés sont les traitements au soufre (NH[indice inférieur 4])[indice inférieur 2]S et les dépôts de nitrure de silicium SiN[indice inférieur x] et trois types de substrat ont été utilisés à titre comparatif, un type N (10[indice supérieur 16]), un type N+ (10[indice supérieur 18]) et un non dopé. Dans ce dernier cas, un système de déposition chimique en phase vapeur assist
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Książki na temat "Surface passivation"

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Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-32521-7.

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Travassos, M. A. Passivation of surface modified aluminium by tungsten and tantalum ion implantationa. UMIST, 1994.

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S, Higashi Gregg, Irene Eugene A, Ohmi Tadahiro 1939-, and Materials Research Society. Meeting Symposium Y., eds. Surface chemical cleaning and passivation for semiconductor processing: Symposium held April 13-15, 1993, San Francisco, California, U.S.A. Materials Research Society, 1993.

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J, Nemanich R., ed. Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing: Symposium held April 27-29, 192, San Francisco, California, U.S.A. Materials Research Society, 1992.

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Michael, Liehr, ed. Ultraclean semiconductor processing technology and surface chemical cleaning and passivation: Symposium held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society, 1995.

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R, Jones William, Herrera-Fierro Pilar, and United States. National Aeronautics and Space Administration., eds. The effects of acid passivation, tricresyl phosphate pre-soak, and UV/ozone treatment on the tribology of perfluoropolyether-lubricated 440C stainless steel couples. National Aeronautics and Space Administration, 1997.

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International, Symposium on Passivity (7th 1994 Technical University of Clausthal Germany). Passivation of metals and semiconductors: Proceedings of the Seventh International Symposium on Passivity, Passivation of Metals and Semiconductors, Technical University of Clausthal, Germany, August 21-26, 1994. Trans Tech Publications, 1995.

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Norman, Hackerman, McCafferty E, Brodd R. J, and Electrochemical Society Corrosion Division, eds. Surfaces, inhibition, and passivation: Proceedings of an international symposium honoring Doctor Norman Hackerman on his seventy-fifth birthday. Corrosion Division, Electrochemical Society, 1986.

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Kim, Danny. Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications. National Library of Canada, 2001.

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Olsson, Claes Olof A. Surface Modification and Passivation of Stainless Steel. Almqvist & Wiksell Internat., 1994.

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Części książek na temat "Surface passivation"

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Zhang, Xiaoge Gregory. "Passivation and Surface Film Formation." In Corrosion and Electrochemistry of Zinc. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-9877-7_3.

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Sioncke, Sonja, Yves J. Chabal, and Martin M. Frank. "Germanium Surface Conditioning and Passivation." In Handbook of Cleaning in Semiconductor Manufacturing. John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118071748.ch12.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_18.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-02882-7_18.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces. Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03134-6_18.

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Groll, Juergen, and Martin Moeller. "Surface Passivation for Single Molecule Detection." In Encyclopedia of Biophysics. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-16712-6_576.

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Hoex, Bram. "Surface Passivation and Emitter Recombination Parameters." In Photovoltaic Solar Energy. John Wiley & Sons, Ltd, 2017. http://dx.doi.org/10.1002/9781118927496.ch12.

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Yates, John T. "Wall Passivation in Stainless Steel Ultrahigh Vacuum Systems." In Experimental Innovations in Surface Science. Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-2304-7_44.

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Veinot, Jonathan. "Surface Passivation and Functionalization of Si Nanocrystals." In Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch6.

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Loup, Virginie, Pascal Besson, Olivier Pollet, Eugénie Martinez, Emmanuelle Richard, and Sandrine Lhostis. "Germanium Surface Passivation Using Ozone Gaseous Phase." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.37.

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Streszczenia konferencji na temat "Surface passivation"

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Ladwein, Thomas L., Matthias Sorg, Sebastian Schilling, and Sybille Schilling. "Influencing the Functional Properties of Stainless Steels by Different Surface Treatments." In CORROSION 2011. NACE International, 2011. https://doi.org/10.5006/c2011-11176.

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Abstract The corrosion behaviour of stainless steels is dependent on the passive layer. They are formed depending on the alloying composition of the steel, the surface preparation, air humidity, temperature and there is a clearly pronounced time dependence. In this work the passivation behaviour of different kinds of stainless steel was investigated as a function of surface finishing treatments usually performed during production and manufacturing: grinding with several grits of emery paper, pickling with mixtures of nitric and hydrofluoric acids, passivating with nitric acid and chemical clea
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Nabi, Tarik M., Hideo Sambé, and David E. Ramaker. "A Novel Anodic Dissolution Treatment on Pure Aluminum Dramatically Improves Its Passivation." In CORROSION 1999. NACE International, 1999. https://doi.org/10.5006/c1999-99325.

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Abstract A study of the anodic dissolution of polycrystalline aluminum utilizing in-situ Atomic Force Microscopy (AFM) is reported. Using a novel snodic dissolution treatment, square terraced pyramids (or “ziggurats”) of constant width are formed on the surface. AFM contour and profile plots reveal the extremely square and flat surfaces of the plateaus on top of the ziggurats, all of them having nearly the same size. This treatment on an Al sample is also shown to yield a substantial improvement in its passivation and corrosion properties. The improved passivation obtained through this method
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Ugwu, Maxwell, Theodore Anyika, and Justus C. Ndukaife. "Experimental investigation of surface passivation chemistries for optical nanotweezers." In Optical Trapping and Optical Micromanipulation XXI, edited by Halina Rubinsztein-Dunlop, Kishan Dholakia, and Giovanni Volpe. SPIE, 2024. http://dx.doi.org/10.1117/12.3029886.

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Zhang, Vicky, Henry Yuan, Jongwoo Kim, et al. "Surface passivation for InAs and InAs/InAsSb T2SL photodetectors." In Infrared Technology and Applications LI, edited by David Z. Ting, Gabor F. Fulop, Masafumi Kimata, and Michael H. MacDougal. SPIE, 2025. https://doi.org/10.1117/12.3056058.

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Frail, Paul R., Edward J. Urankar, Gilad Zorn, and Martin M. Morra. "New Yellow Metal Corrosion Inhibitors Targeting Surface Chemistry of Industrial Systems." In CORROSION 2017. NACE International, 2017. https://doi.org/10.5006/c2017-09719.

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Abstract Phosphate is the most common inhibitor used in industrial waters for iron surfaces. When phosphate combines with calcium, calcium phosphate colloids form in solution, and then form a cathodic passivation film on top of the iron oxide layer. Surface analysis was used to examine chemical composition and the formation process of the passivation film. It was found that the dispersant polymer used to control scale inhibition plays a significant role in the calcium phosphate passivation mechanism for iron surfaces. Azoles have long been used in industry to protect yellow metal surfaces and
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Bierwirth, M., J. Goellner, and A. Heyn. "Passivation of Stainless Steels Measured with Electrochemical Noise." In CORROSION 2006. NACE International, 2006. https://doi.org/10.5006/c2006-06428.

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Abstract Stainless steels are widely used as construction materials due to their corrosion resistance obtained by stable passive layers. The formation of those passive layers under atmospheric conditions depends not only on the surface treatment. It depends also on the exposure time in a certain atmosphere after the surface treatment until a stable passive state is reached. This paper shows the ability to measure the formation process of the passive layer with electrochemical noise and to determine necessary exposure times to avoid pitting of freshly treated surfaces. Specimens of SS316 were e
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Ladwein, Thomas L., Matthias Sorg, Sebastian Schilling, and Sybille Schilling. "Characterization and Optimization of the Functional Properties of Stainless Steel Surfaces." In CORROSION 2010. NACE International, 2010. https://doi.org/10.5006/c2010-10339.

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Abstract The passivation behavior of 304L, 316L and 22 %Cr duplex stainless steel has been studied as a function of mechanical. chemical and/or.electrochemical treatment. Surface energies, impedance spectra and pitting potentials were evaluated as measures to characterize the functional surface properties. Specimen blasted with glass beads always performed better than those blasted with alumina. Nitric acid has no long time benefits as a passivating agent. The influence of citric acid on the passive behavior is marginal and does in the long run not at all reach that of a air-only passivated sp
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Mebrahtu, Thomas, and Kenneth J. Del Rossi. "SEM and XPS Characterization of the Carbon Steel Surface Passivation Film in Anhydrous HF Media." In CORROSION 1995. NACE International, 1995. https://doi.org/10.5006/c1995-95341.

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Abstract We have performed a surface characterization study in attempts to identify the chemical species that constitute the iron fluoride-based passivation film in the anhydrous HF/carbon steel system. Relative to untreated carbon steel, anhydrous HF-exposed samples have a homogeneous surface with an unaltered overall morphology. X-ray photoelectron spectroscopic (XPS) data have provided detailed fundamental insight into the chemical nature of the surface passivation film. We have discovered that, upon exposure to anhydrous HF media, carbon steel passivates by forming an FeF2-based film (&amp
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Seo, Masahiro, and Norio Sato. "Inhibition in the Context of Passivation." In CORROSION 1989. NACE International, 1989. https://doi.org/10.5006/c1989-89138.

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Abstract This article deals with anodic dissolution and passivation of metals in relation to anodic inhibition of metallic corrosion. It is stressed that an adsorption of electrolyte ions on the metal surface plays vital roles in the anodic dissolution and passivation of metals. In particular, it is pointed out that the acid-base nature of metal’s surface or metal ions and ligands, is one of the important factors which controls the chemical stability of adsorption intermediates and metal-hydrated complex ions in solution. Furthermore, the roles of passivators in corrosion inhibition are discus
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Diex, Kevin, Tobias Jäckel, Vikas Dubey, et al. "Investigations on Low-Temperature Aluminium Thermocompression Bonding Using Surface Passivation Technique." In 2024 8th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2024. https://doi.org/10.1109/ltb-3d64053.2024.10774089.

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Raporty organizacyjne na temat "Surface passivation"

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Adhikari, Hemant, Shiyu Sun, Piero Pianetta, Chirstopher E. D. Chidsey, and Paul C. McIntyre. Surface Passivation of Germanium Nanowires. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/890831.

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Clark, E. Evaluation of Alternate Surface Passivation Methods (U). Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/890165.

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Clark, Elliot A. Evaluation of Alternate Stainless Steel Surface Passivation Methods. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/881451.

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Das, Ujjwal, Ajeet Rohatgi, Clemens Heske, et al. Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/1859832.

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Schultz-Wittmann, Oliver. Back-Surface Passivation for High-Efficiency Crystalline Silicon Solar Cells: Final Technical Progress Report, September 2010 -- May 2012. Office of Scientific and Technical Information (OSTI), 2012. http://dx.doi.org/10.2172/1048995.

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Markunas, R. J., G. G. Fountain, R. A. Rudder, and S. V. Hattangady. Passivation and Gating of GaAs and Si Surfaces Using Pseudomorphic Structures. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada219351.

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Rubloff, G. W., and M. Liehr. Growth and Surface Chemistry of Passivating Insulators for Silicon Technology. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada247243.

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Acosta Perez, Lina. Development of electronically passivating surfaces to enhance battery performance. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1821259.

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Wilmont, Martyn, Greg Van Boven, and Tom Jack. GRI-96-0452_1 Stress Corrosion Cracking Under Field Simulated Conditions I. Pipeline Research Council International, Inc. (PRCI), 1997. http://dx.doi.org/10.55274/r0011963.

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Electrochemical measurements have been performed on polished and mill scaled steel samples. The solutions investigated have included carbonate bicarbonate mixtures of varying pH as well as solutions of neutral pH such as NS4. Results indicate that the mechanism of corrosion associated with the carbonate bicarbonate environments involves passive film formation. No such passivation is observed for solutions associated with neutral pH SCC. Electrochemical corrosion rates measured on polished steel specimens exposed to NS4 solutions in the pH range 5 to 6.8 were in the region of 5 x 10e-1 to 1 x 1
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