Artykuły w czasopismach na temat „STM lithography”
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Dobrik, G., L. Tapasztó, P. Nemes-Incze, Ph Lambin i L. P. Biró. "Crystallographically oriented high resolution lithography of graphene nanoribbons by STM lithography". physica status solidi (b) 247, nr 4 (15.01.2010): 896–902. http://dx.doi.org/10.1002/pssb.200982953.
Pełny tekst źródłaMarrian, C. R. K., i E. A. Dobisz. "High-resolution lithography with a vacuum STM". Ultramicroscopy 42-44 (lipiec 1992): 1309–16. http://dx.doi.org/10.1016/0304-3991(92)90440-u.
Pełny tekst źródłaZhang, L. B., J. X. Shi, Ju Long Yuan, Shi Ming Ji i M. Chang. "The Advancement of SPM-Based Nanolithography". Materials Science Forum 471-472 (grudzień 2004): 353–57. http://dx.doi.org/10.4028/www.scientific.net/msf.471-472.353.
Pełny tekst źródłaYang, Ye, i Wan Sheng Zhao. "Fabrication of the Nanoscale Flat-Bottomed and Lamellar Structures on HOPG Surface by STM-Based Electric Lithography". Key Engineering Materials 562-565 (lipiec 2013): 45–51. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.45.
Pełny tekst źródłaKleineberg, U., A. Brechling, M. Sundermann i U. Heinzmann. "STM Lithography in an Organic Self-Assembled Monolayer". Advanced Functional Materials 11, nr 3 (czerwiec 2001): 208–12. http://dx.doi.org/10.1002/1616-3028(200106)11:3<208::aid-adfm208>3.0.co;2-x.
Pełny tekst źródłaVetrone, J., i Y. W. Chung. "Changes in tip structure measured during STM lithography". Applied Surface Science 78, nr 3 (lipiec 1994): 331–38. http://dx.doi.org/10.1016/0169-4332(94)90022-1.
Pełny tekst źródłaDobrik, Gergely, Levente Tapasztó i László Biró. "Nanometer wide ribbons and triangles by STM lithography of graphene". Nanopages 7, nr 1 (czerwiec 2012): 1–7. http://dx.doi.org/10.1556/nano.2010.00001.
Pełny tekst źródłaTucker, J. R., i T. C. Shen. "Prospects for atomically ordered device structures based on STM lithography". Solid-State Electronics 42, nr 7-8 (lipiec 1998): 1061–67. http://dx.doi.org/10.1016/s0038-1101(97)00302-x.
Pełny tekst źródłaKASU, Makoto, i Naoki KOBAYASHI. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Nanometer-scale GaAs Selective Growth Using STM Lithography." Hyomen Kagaku 19, nr 11 (1998): 734–41. http://dx.doi.org/10.1380/jsssj.19.734.
Pełny tekst źródłaLeuschner, R., E. Günther, G. Falk, A. Hammerschmidt, K. Kragler, I. W. Rangelow i J. Zimmermann. "Bilayer resist process for exposure with low-voltage electrons (STM-lithography)". Microelectronic Engineering 30, nr 1-4 (styczeń 1996): 447–50. http://dx.doi.org/10.1016/0167-9317(95)00284-7.
Pełny tekst źródłaWang, Guang Long, Min Gao, Li Shuang Feng, Yi Dun, Jian Guo Hou i Jie Tang. "Nanostructures and Nanodevices Special Fabrication and Characterization". Key Engineering Materials 483 (czerwiec 2011): 243–48. http://dx.doi.org/10.4028/www.scientific.net/kem.483.243.
Pełny tekst źródłaYang, Ye, i Zuhua Fang. "Nanoscale electric discharge‐induced FLG peeling off during the STM electric lithography". Micro & Nano Letters 12, nr 10 (październik 2017): 793–98. http://dx.doi.org/10.1049/mnl.2017.0383.
Pełny tekst źródłaSAKURAI, Makoto, Carsten THIRSTRUP i Masakazu AONO. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Formation of Silicon Dangling Bonds Using STM Lithography and Its Decoration." Hyomen Kagaku 19, nr 11 (1998): 708–15. http://dx.doi.org/10.1380/jsssj.19.708.
Pełny tekst źródłaMühl, T., i S. Myhra. "Electro-oxidative lithography by STM as a proximity electrode of electrically conducting DLC". Journal of Physics: Conference Series 61 (1.04.2007): 841–46. http://dx.doi.org/10.1088/1742-6596/61/1/168.
Pełny tekst źródłaMol, J. A., S. P. C. Beentjes i S. Rogge. "A low temperature surface preparation method for STM nano-lithography on Si(100)". Applied Surface Science 256, nr 16 (czerwiec 2010): 5042–45. http://dx.doi.org/10.1016/j.apsusc.2010.03.052.
Pełny tekst źródłaChen, Fan, Anhong Zhou i Haeyeon Yang. "The effects of strain on STM lithography on HS-ssDNA/Au (111) surface". Applied Surface Science 255, nr 15 (maj 2009): 6832–39. http://dx.doi.org/10.1016/j.apsusc.2009.03.003.
Pełny tekst źródłaJede, Ralf, i George Lanzarotta. "Using a SEM to “Write” Sub Micron Structures". Microscopy Today 1, nr 4 (czerwiec 1993): 4–5. http://dx.doi.org/10.1017/s1551929500067389.
Pełny tekst źródłaSavouchkina, A., A. Foelske-Schmitz, V. A. Guzenko, D. Weingarth, G. G. Scherer, A. Wokaun i R. Kötz. "In situ STM study of Pt-nanodot arrays on HOPG prepared by electron-beam lithography". Electrochemistry Communications 13, nr 5 (maj 2011): 484–87. http://dx.doi.org/10.1016/j.elecom.2011.02.027.
Pełny tekst źródłaOhtsuka, Kenichi, i Kenji Yonei. "Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist". Japanese Journal of Applied Physics 41, Part 2, No. 6B (15.06.2002): L667—L668. http://dx.doi.org/10.1143/jjap.41.l667.
Pełny tekst źródłaISHIBASHI, Masayoshi, Seiji HEIKE, Hiroshi KAJIYAMA, Yasuo WADA i Tomihiro HASHIZUME. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Ten-nanometer Level Lithography Using Scanning Probe Microscopy." Hyomen Kagaku 19, nr 11 (1998): 722–26. http://dx.doi.org/10.1380/jsssj.19.722.
Pełny tekst źródłaTosic, Dragana, Zoran Markovic, Svetlana Jovanovic, Momir Milosavljevic i Biljana Todorovic-Markovic. "Comparative analysis of different methods for graphene nanoribbon synthesis". Chemical Industry 67, nr 1 (2013): 147–56. http://dx.doi.org/10.2298/hemind120403056t.
Pełny tekst źródłaHersam, M. C., G. C. Abeln i J. W. Lyding. "An approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)". Microelectronic Engineering 47, nr 1-4 (czerwiec 1999): 235–37. http://dx.doi.org/10.1016/s0167-9317(99)00203-8.
Pełny tekst źródłaPavlova, T. V., V. M. Shevlyuga, B. V. Andryushechkin, G. M. Zhidomirov i K. N. Eltsov. "Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography". Applied Surface Science 509 (kwiecień 2020): 145235. http://dx.doi.org/10.1016/j.apsusc.2019.145235.
Pełny tekst źródłaSundermann, M., J. Hartwich, K. Rott, D. Meyners, E. Majkova, U. Kleineberg, M. Grunze i U. Heinzmann. "Nanopatterning of Au absorber films on Mo/Si EUV multilayer mirrors by STM lithography in self-assembled monolayers". Surface Science 454-456 (maj 2000): 1104–9. http://dx.doi.org/10.1016/s0039-6028(00)00208-9.
Pełny tekst źródłaFoelske-Schmitz, A., A. Peitz, V. A. Guzenko, D. Weingarth, G. G. Scherer, A. Wokaun i R. Kötz. "In situ electrochemical STM study of platinum nanodot arrays on highly oriented pyrolythic graphite prepared by electron beam lithography". Surface Science 606, nr 23-24 (grudzień 2012): 1922–33. http://dx.doi.org/10.1016/j.susc.2012.07.040.
Pełny tekst źródłaAONO, Masakazu, Chun-Sheng JIANG, Tomonobu NAKAYAMA, Taichi OKUDA, Shan QIAO, Makoto SAKURAI, Carsten THIRSTRUP i Zang-Hua WU. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. The Present and Future of Nano-Lithography Using Scanning Probes. How to Measure the Properties of Nano-Lithographed Structures." Hyomen Kagaku 19, nr 11 (1998): 698–707. http://dx.doi.org/10.1380/jsssj.19.698.
Pełny tekst źródłaDzurak, A. S., M. Y. Simmons, A. R. Hamilton, R. G. Clark, R. Brenner, T. M. Buehler, N. J. Curson i in. "Construction of a silicon-based solid state quantum computer". Quantum Information and Computation 1, Special (grudzień 2001): 82–95. http://dx.doi.org/10.26421/qic1.s-8.
Pełny tekst źródłaYang, Ye, i Wansheng Zhao. "Investigation of the nanoscale features fabricated on the HOPG surface induced by STM electric lithography under different voltage regions in ambient conditions". Precision Engineering 37, nr 2 (kwiecień 2013): 473–82. http://dx.doi.org/10.1016/j.precisioneng.2012.12.004.
Pełny tekst źródłaSmolyaninov, Igor I. "Scanning Probe Microscopy of Surface Plasmons". International Journal of Modern Physics B 11, nr 21 (20.08.1997): 2465–510. http://dx.doi.org/10.1142/s021797929700126x.
Pełny tekst źródłaYang, Ye, i Jun Lin. "Study of the electrode tool wear and the probe tip sharpening phenomena during the nanoscale STM electric discharge lithography of the bulk HOPG surface". Journal of Materials Processing Technology 234 (sierpień 2016): 150–57. http://dx.doi.org/10.1016/j.jmatprotec.2016.03.022.
Pełny tekst źródłaYamamoto, Hiroki, Guy Dawson, Takahiro Kozawa i Alex P. G. Robinson. "Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments". Quantum Beam Science 4, nr 2 (27.03.2020): 19. http://dx.doi.org/10.3390/qubs4020019.
Pełny tekst źródłaPark, Jun Han, Dan Hee Yun, Yong Won Ma, Cheong Yeol Gwak i Bo Sung Shin. "Prism-Based Laser Interference Lithography System for Simple Multibeam Interference Lithography". Science of Advanced Materials 12, nr 3 (1.03.2020): 398–402. http://dx.doi.org/10.1166/sam.2020.3650.
Pełny tekst źródłaFischer, Ulrich Christian, Carsten Hentschel, Florian Fontein, Linda Stegemann, Christiane Hoeppener, Harald Fuchs i Stefanie Hoeppener. "Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer". Beilstein Journal of Nanotechnology 5 (3.09.2014): 1441–49. http://dx.doi.org/10.3762/bjnano.5.156.
Pełny tekst źródłaZhang, Man, Liang-Ping Xia, Sui-Hu Dang, A.-Xiu Cao, Qi-Ling Deng i Chun-Lei Du. "A Novel Nanoimprint Lithography Thiol-ene Resist for Sub-70 nm Nanostructures". Science of Advanced Materials 12, nr 6 (1.06.2020): 779–83. http://dx.doi.org/10.1166/sam.2020.3721.
Pełny tekst źródłaYou, Dong-Bin, Jun-Han Park, Bo-Seok Kang, Dan-Hee Yun i Bo Sung Shin. "A Fundamental Study of a Surface Modification on Silicon Wafer Using Direct Laser Interference Patterning with 355-nm UV Laser". Science of Advanced Materials 12, nr 4 (1.04.2020): 516–19. http://dx.doi.org/10.1166/sam.2020.3658.
Pełny tekst źródłaDu, Hua, Hui Min Xie, Hai Chang Jiang, Li Jian Rong, Qi Ang Luo, Chang Zhi Gu i Ya-Pu Zhao. "Strain Analysis on Porous TiNi SMA Using SEM Moiré Method". Key Engineering Materials 326-328 (grudzień 2006): 79–82. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.79.
Pełny tekst źródłaZhang, Hui Yong. "Nano Structures Constructed by AFM Based Lithography". Advanced Materials Research 815 (październik 2013): 490–95. http://dx.doi.org/10.4028/www.scientific.net/amr.815.490.
Pełny tekst źródłaHu, Qin. "Thermal Evolution of Compound Nanoparticles on Moulds Machined by Focused-Ion-Beam for Micro/Nano Lithography". Journal of Nano Research 18-19 (lipiec 2012): 307–15. http://dx.doi.org/10.4028/www.scientific.net/jnanor.18-19.307.
Pełny tekst źródłaGuo, XiaoWei, Jinglei Du, Xiangang Luo, Qiling Deng i Chunlei Du. "RET simulations for SLM-based maskless lithography". Microelectronic Engineering 85, nr 5-6 (maj 2008): 929–33. http://dx.doi.org/10.1016/j.mee.2008.01.055.
Pełny tekst źródłaToyofuku, Takashi, Shinya Nishimura, Kazuya Miyashita i Jun-Ichi Shirakashi. "10 Micrometer-Scale SPM Local Oxidation Lithography". Journal of Nanoscience and Nanotechnology 10, nr 7 (1.07.2010): 4543–47. http://dx.doi.org/10.1166/jnn.2010.2356.
Pełny tekst źródłaKim, Kwang-Ryul, Junsin Yi, Sung-Hak Cho, Nam-Hyun Kang, Myung-Woo Cho, Bo-Sung Shin i Byoungdeog Choi. "SLM-based maskless lithography for TFT-LCD". Applied Surface Science 255, nr 18 (czerwiec 2009): 7835–40. http://dx.doi.org/10.1016/j.apsusc.2009.05.022.
Pełny tekst źródłaSexton, B. A., i R. J. Marnock. "Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy". Microscopy and Microanalysis 6, nr 2 (marzec 2000): 129–36. http://dx.doi.org/10.1007/s100059910012.
Pełny tekst źródłaYang, Ki Yeon, Jong Woo Kim, Sung Hoon Hong i Heon Lee. "Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography". Solid State Phenomena 124-126 (czerwiec 2007): 523–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.523.
Pełny tekst źródłaKim, Seonjun, i Young Tae Cho. "Replication and Surface Treatment of Micro Pattern Generated by Entanglement of Nanowires". Science of Advanced Materials 12, nr 3 (1.03.2020): 403–6. http://dx.doi.org/10.1166/sam.2020.3651.
Pełny tekst źródłaSeo, Manseung, i Haeryung Kim. "Delta lithography method to increase CD uniformity and throughput of SLM-based maskless lithography". Microelectronic Engineering 87, nr 5-8 (maj 2010): 1135–38. http://dx.doi.org/10.1016/j.mee.2009.10.053.
Pełny tekst źródłaHasegawa, Akihiro, Ryo-Il Kang i Katsufusa Shono. "Electron beam direct lithography system using the SEM". Electronics and Communications in Japan (Part II: Electronics) 75, nr 11 (1992): 51–61. http://dx.doi.org/10.1002/ecjb.4420751106.
Pełny tekst źródłaHuang, Cheng, Markus Moosmann, Jiehong Jin, Tobias Heiler, Stefan Walheim i Thomas Schimmel. "Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers". Beilstein Journal of Nanotechnology 3 (4.09.2012): 620–28. http://dx.doi.org/10.3762/bjnano.3.71.
Pełny tekst źródłaYamamoto, Takamichi, Hideki Maekawa i Tsutomu Yamamura. "AFM Anodization Lithography on Transparent Conductive Substrates". Journal of Nanoscience and Nanotechnology 8, nr 8 (1.08.2008): 3838–42. http://dx.doi.org/10.1166/jnn.2008.191.
Pełny tekst źródłaFarehanim, M. A., U. Hashim, Norhayati Soin, A. H. Azman, S. Norhafizah, M. F. Fatin i R. M. Ayub. "Fabrication of Aluminum Interdigitated Electrode for Biosensor Application Using Conventional Lithography". Advanced Materials Research 1109 (czerwiec 2015): 118–22. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.118.
Pełny tekst źródłaLauria, John, Ronald Albright, Olga Vladimirsky, Maarten Hoeks, Roel Vanneer, Bert van Drieenhuizen, Luoqi Chen, Luc Haspeslagh i Ann Witvrouw. "SLM device for 193nm lithographic applications". Microelectronic Engineering 86, nr 4-6 (kwiecień 2009): 569–72. http://dx.doi.org/10.1016/j.mee.2008.11.022.
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