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Artykuły w czasopismach na temat "Spin-orbit Coupled Electronic Systems"
Marković, Igor, Matthew D. Watson, Oliver J. Clark, Federico Mazzola, Edgar Abarca Morales, Chris A. Hooley, Helge Rosner i in. "Electronically driven spin-reorientation transition of the correlated polar metal Ca3Ru2O7". Proceedings of the National Academy of Sciences 117, nr 27 (23.06.2020): 15524–29. http://dx.doi.org/10.1073/pnas.2003671117.
Pełny tekst źródłaBerger, Michael, Dominik Schulz i Jamal Berakdar. "Spin-Resolved Quantum Scars in Confined Spin-Coupled Two-Dimensional Electron Gas". Nanomaterials 11, nr 5 (11.05.2021): 1258. http://dx.doi.org/10.3390/nano11051258.
Pełny tekst źródłaHJELM, ANDERS, JOAKIM TRYGG, OLLE ERIKSSON, BÖRJE JOHANSSON i JOHN M. WILLS. "ORBITAL PARAMAGNETISM IN METALLIC SYSTEMS WITH LARGE ANGULAR MOMENTA". International Journal of Modern Physics B 09, nr 21 (30.09.1995): 2735–51. http://dx.doi.org/10.1142/s0217979295001026.
Pełny tekst źródłaKochelap, V. A., i A. E. Belyaev. "To 95-th birthday of Professor E.I. Rashba (looking back ones again)". Semiconductor Physics, Quantum Electronics and Optoelectronics 25, nr 3 (6.10.2022): 235–39. http://dx.doi.org/10.15407/spqeo25.03.235.
Pełny tekst źródłaShah, Muzamil. "Probing topological quantum phase transitions via photonic spin Hall effects in spin-orbit coupled 2D quantum materials". Journal of Physics D: Applied Physics 55, nr 10 (6.12.2021): 105105. http://dx.doi.org/10.1088/1361-6463/ac3c76.
Pełny tekst źródłaFiorentini, Simone, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes i Viktor Sverdlov. "Finite Element Approach for the Simulation of Modern MRAM Devices". Micromachines 14, nr 5 (22.04.2023): 898. http://dx.doi.org/10.3390/mi14050898.
Pełny tekst źródłaPolley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon i Jeffrey Bokor. "Progress toward picosecond on-chip magnetic memory". Applied Physics Letters 120, nr 14 (4.04.2022): 140501. http://dx.doi.org/10.1063/5.0083897.
Pełny tekst źródłaCooper, David L., Joseph Gerratt i Mario Raimondi. "The Spin-coupled Approach to Electronic Structure". Molecular Simulation 4, nr 5 (luty 1990): 293–312. http://dx.doi.org/10.1080/08927029008022393.
Pełny tekst źródłaWang, C. M., i M. Q. Pang. "Optical out-of-plane spin polarization and charge conductivities in spin-orbit-coupled systems in the presence of an in-plane magnetic field". European Physical Journal B 74, nr 1 (4.02.2010): 19–25. http://dx.doi.org/10.1140/epjb/e2010-00040-7.
Pełny tekst źródłaChen, Xiong-wei, Zhi-gui Deng, Xiao-xi Xu, Shu-lan Li, Zhi-wei Fan, Zhao-pin Chen, Bin Liu i Yong-yao Li. "Nonlinear modes in spatially confined spin–orbit-coupled Bose–Einstein condensates with repulsive nonlinearity". Nonlinear Dynamics 101, nr 1 (27.06.2020): 569–79. http://dx.doi.org/10.1007/s11071-020-05692-6.
Pełny tekst źródłaRozprawy doktorskie na temat "Spin-orbit Coupled Electronic Systems"
Celiberti, Lorenzo. "Small polarons in spin-orbit coupled osmates". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24839/.
Pełny tekst źródłaWalkup, Daniel. "Doping and strain effects in strongly spin-orbit coupled systems". Thesis, Boston College, 2016. http://hdl.handle.net/2345/bc-ir:106810.
Pełny tekst źródłaWe present Scanning Tunneling Microscopy (STM) studies on several systems in which spin-orbit coupling leads to new and interesting physics, and where tuning by doping and/or strain can significantly modify the electronic properties, either inducing a phase transition or by sharply influencing the electronic structure locally. In the perovskite Iridate insulator Sr3Ir2O7, we investigate the parent compound, determining the band gap and its evolution in response to point defects which we identify as apical oxygen vacancies. We investigate the effects of doping the parent compound with La (in place of Sr) and Ru (in place of Ir). In both cases a metal-insulator transition (MIT) results: at x ~ 38% with Ru, and x ~ 5% with La. In the La-doped samples we find nanoscale phase separation at dopings just below the MIT, with metallic spectra associated with clusters of La atoms. Further, we find resonances near the Fermi energy associated with individual La atoms, suggesting an uneven distribution of dopants among the layers of the parent compound. Bi2Se3 is a topological insulator which hosts linearly dispersing Dirac surface states. Doping with In (in place of Bismuth) brings about topological phase transition, achieving a trivial insulator at x ~ 4%. We use high-magnetic field Landau level spectroscopy to study the surface state’s properties approaching the phase transition and find, by a careful analysis of the peak positions find behavior consistent with strong surface-state Zeeman effects: g~50. This interpretation implies, however, a relabeling of the Landau levels previously observed in pristine Bi2Se3, which we justify through ab initio calculations. The overall picture is of a g-factor which steadily decreases as In is added up to the topological phase transition. Finally, we examine the effects of strain on the surface states of (001) thin films of the topological crystalline insulator SnTe. When these films are grown on closely-related substrates—in this case PbSe(001)—a rich pattern of surface strain emerges. We use phase-sensitive analysis of atomic-resolution STM topographs to measure the strain locally, and spatially-resolved quasiparticle interference imaging to compare the Dirac point positions in regions with different types of strain, quantifying for the first time the effect of anisotropic strain on the surface states of a topological crystalline insulator
Thesis (PhD) — Boston College, 2016
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
Zhou, Wenwen. "STM probe on the surface electronic states of spin-orbit coupled materials". Thesis, Boston College, 2014. http://hdl.handle.net/2345/bc-ir:103564.
Pełny tekst źródłaSpin-orbit coupling (SOC) is the interaction of an electron's intrinsic angular momentum (spin) with its orbital momentum. The strength of this interaction is proportional to Z4 where Z is the atomic number, so generally it is stronger in atoms with higher atomic number, such as bismuth (Z=83) and iridium (Z=77). In materials composed of such heavy elements, the prominent SOC can be sufficient to modify the band structure of the system and lead to distinct phase of matter. In recent years, SOC has been demonstrated to play a critical role in determining the unusual properties of a variety of compounds. SOC associated materials with exotic electronic states have also provided a fertile platform for studying emergent phenomena as well as new physics. As a consequence, the research on these interesting materials with any insight into understanding the microscopic origin of their unique properties and complex phases is of great importance. In this context, we implement scanning tunneling microscopy (STM) and spectroscopy (STS) to explore the surface states (SS) of the two major categories of SOC involved materials, Bi-based topological insulators (TI) and Ir-based transition metal oxides (TMO). As a powerful tool in surface science which has achieved great success in wide variety of material fields, STM/STS is ideal to study the local density of states of the subject material with nanometer length scales and is able to offer detailed information about the surface electronic structure. In the first part of this thesis, we report on the electronic band structures of three-dimensional TIs Bi2Te3 and Bi2Se3. Topological insulators are distinct quantum states of matter that have been intensely studied nowadays. Although they behave like ordinary insulators in showing fully gapped bulk bands, they host a topologically protected surface state consisting of two-dimensional massless Dirac fermions which exhibits metallic behavior. Indeed, this unique gapless surface state is a manifestation of the non-trivial topology of the bulk bands, which is recognized to own its existence to the strong SOC. In chapter 3, we utilize quasiparticle interference (QPI) approach to track the Dirac surface states on Bi2Te3 up to ~800 meV above the Dirac point. We discover a novel interference pattern at high energies, which probably originates from the impurity-induced spin-orbit scattering in this system that has not been experimentally detected to date. In chapter 4, we discuss the topological SS evolution in (Bi1-xInx)2Se3 series, by applying Landau quantization approach to extract the band dispersions on the surface for samples with different indium content. We propose that a topological phase transition may occur in this system when x reaches around 5%, with the experimental signature indicating a possible formation of gapped Dirac cone for the surface state at this doping. In the second part of this thesis, we focus on investigating the electronic structure of the bilayer strontium iridate Sr3Ir2O7. The correlated iridate compounds belong to another domain of SOC materials, where the electronic interaction is involved as well. Specifically, the unexpected Mott insulating state in 5d-TMO Sr2IrO4 and Sr3Ir2O7 has been suggested originate from the cooperative interplay between the electronic correlations with the comparable SOC, and the latter is even considered as the driving force for the extraordinary ground state in these materials. In chapter 6, we carried out a comprehensive examination of the electronic phase transition from insulating to metallic in Sr3Ir2O7 induced by chemical doping. We observe the subatomic feature close to the insulator-to-metal transition in response with doping different carriers, and provide detailed studies about the local effect of dopants at particular sites on the electronic properties of the system. Additionally, the basic experimental techniques are briefly described in chapter 1, and some background information of the subject materials are reviewed in chapter 2 and chapter 5, respectively
Thesis (PhD) — Boston College, 2014
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
Lüffe, Matthias [Verfasser]. "Semiclassical treatment of transport and spin relaxation in spin-orbit coupled systems / Matthias Lüffe". Berlin : Freie Universität Berlin, 2012. http://d-nb.info/1029850542/34.
Pełny tekst źródłaPezo, Lopez Armando Arquimedes [UNESP]. "Electronic structure of two dimensional systems with spin-orbit interaction". Universidade Estadual Paulista (UNESP), 2016. http://hdl.handle.net/11449/151633.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC’s. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo spin órbita sobre os materiais isolados, tambem nas heterostruturas (duas camadas formadas por eles). Finalmente, tambem estudou-se a possibilidade de defeitos e sua possível influência sobre a estrutura eletrônica das heterostruturas.
The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the final expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, offers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the effect of spin orbit. We address calculations to describe the effects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible influence on the electronic structure of heterostructures.
Pezo, Lopez Armando Arquimedes. "Electronic structure of two dimensional systems with spin-orbit interaction /". São Paulo, 2016. http://hdl.handle.net/11449/151633.
Pełny tekst źródłaBanca: Marcelo Takeshi Yamashita
Banca: Cedric Rocha Leão
Resumo: A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC's. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo s... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the nal expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, o ers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the e ect of spin orbit. We address calculations to describe the e ects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible in uence on the electronic structure of heterostructures
Mestre
Chen, Xiang. "Electronic phase behaviors in spin-orbit coupled magnets at the localized and itinerant limits". Thesis, Boston College, 2018. http://hdl.handle.net/2345/bc-ir:108183.
Pełny tekst źródłaThe magnetic interaction in materials generally can be categorized into two extremes: localized and itinerant. This work will focus on the electronic and magnetic properties of two prototypical magnetic compounds, which fall into the opposite extremes, i:e:, the spin-orbit coupled Mott insulator Sr₂IrO₄ (Sr214) described by the localized Heisenberg model and the itinerant helical (nearly-ferromagnetic) metal MnSi pictured with band or Stoner magnetism. The single layered cuprate analogue Sr₂IrO₄ has attracted considerable attentions in recent years, due to its unusual electronic and magnetic properties and the potential to access superconducting states. The exotic jeff = 1/2 ground state for the Ir⁴⁺ (5d⁵) ions results from the delicate balance of competing/cooperating energy scales, such as the stronger spin-orbit coupling (SOC) in 5d materials as compared to 3d transition metal oxides (TMOs), crystal electric field (CEF) splitting and electron-electron correlations. Superconducting states are theoretically predicted to be achievable if sufficient carriers are introduced into this spin-orbit assisted compound, which later triggers tremendous experimental works toward the realization of superconductivity. Here in this work a combined study of various probes, such as transport, magnetization, X-ray and neutron scattering measurements, focusing on the electronic and magnetic properties, is presented in the perturbed spin-orbit coupled Mott (SOM) state. Specifically in electron doped (Sr₁₋ₓLaₓ)₂IrO₄, a detailed mapping of magnetism with respect to electron doping is presented, demonstrating the gradual transition from long range magnetic order in parent state, to intermediate short range order, and eventually into the incommensurate (IC) spin density wave (SDW) state with increasing electron doping. Our picture supports the conjecture that the quenched Mott phases in electron-doped Sr₂IrO₄ and hole doped La₂CuO₄ share common competing electronic phases. On the other hand, the prototypical itinerant metal MnSi is examined by inelastic neutron scattering (INS). Our experimental data directly demonstrate the collapse of linear spin wave theory for localized Heisenberg magnets in the large energy limit, although the low energy dispersion is still described by the ferromagnetic spin wave theory. Most importantly, our observations display the chimney-like dispersion spectrum up to the energy scale of at least 240 meV, which is more than one order of magnitude larger than the Heisenberg interaction energy scale. For the first time, solid characterizations of Stoner excitations in itinerant helimagnet (nearly ferromagnetic) have been demonstrated up to an exceedingly large energy scale. Our intriguing results will greatly promote further understanding and exploration of Stoner excitations in itinerant magnets
Thesis (PhD) — Boston College, 2018
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
Turner, L. W. "Some simple pseudo-systems that model Jahn-Teller systems with spin-orbit coupling". Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380009.
Pełny tekst źródłaRudolph, Martin. "Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials". Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/20374.
Pełny tekst źródłathe characteristics of Bi "film growth by thermal evaporation is provided. Morphologically and electrically high quality "films are grown using a two stage deposition procedure. The phase and spin coherence of Bi geometries constrained in one, two, and three dimensions are systematically studied by analysis of the weak antilocalization transport signature, a quantum interference phenomenon sensitive to spin-orbit coupling. The "findings indicate that the phase coherence scales proportionally to the limiting dimension of the structure for sizes less than 500 nm. Specifically, in Bi wires, the phase coherence length is approximately as long as the wire width. Dephasing due to quantum confinement e"ffects limit the phase coherence in small Bi structures, impairing the observation of controlled interference phenomena in nano-scale Bi rings. The spin coherence length is independent of dimensional constraint by the film thickness, but increases significantly as the lateral dimensions, such as wire width, are constrained. This is a consequence of the quantum transport contribution from the strongly spin-orbit coupled Bi(001) surface state. To probe the Bi surface state further, Bi/CoFe junctions are fabricated. The anisotropic magnetoresistance of the CoFe is modifi"ed when carriers tunnel into the CoFe from Bi, possibly due to a spin dependent tunneling process or an interaction between the spin polarized density of states in CoFe and the anisotropic spin-orbit coupled density of states in Bi. InSb/CoFe junctions are studied as InSb "films are a simpler spin-orbit coupled system compared to Bi "films. For temperatures below 3.5 K, a large, symmetric, and abrupt negative magnetoresistance is observed. The low-"field high resistance state has similar temperature and magnetic "field dependences as the superconducting phase, but a superconducting component in the device measurements seems absent. A differential conductance measurement of the InSb/CoFe interface during spin injection indicates a quasiparticle gap present at the Fermi energy, coinciding with the large magnetoresistance.
Ph. D.
Asmar, Mahmoud M. "Electronic and Spin Transport in Dirac-Like Systems". Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1437564830.
Pełny tekst źródłaKsiążki na temat "Spin-orbit Coupled Electronic Systems"
Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Tokyo: Springer Japan, 2013.
Znajdź pełny tekst źródłaWinkler, Roland. Spin-orbit coupling effects in two-dimensional electron and hole systems. Berlin: Springer, 2003.
Znajdź pełny tekst źródłaUchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Springer, 2013.
Znajdź pełny tekst źródłaUchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Springer, 2016.
Znajdź pełny tekst źródłaSpin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.
Znajdź pełny tekst źródłaWinkler, Roland. Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.
Znajdź pełny tekst źródłaWinkler, Roland. Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2010.
Znajdź pełny tekst źródłaMelnikov, D. V., J. Kim, L. X. Zhang i J. P. Leburton. Few-electron quantum-dot spintronics. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.2.
Pełny tekst źródłaMorawetz, Klaus. Kinetic Theory of Systems with SU(2) Structure. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.003.0021.
Pełny tekst źródłaMorawetz, Klaus. Interacting Systems far from Equilibrium. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.001.0001.
Pełny tekst źródłaCzęści książek na temat "Spin-orbit Coupled Electronic Systems"
Culcer, Dimitrie. "Semiclassical Spin Transport in Spin-Orbit Coupled Systems". W Encyclopedia of Complexity and Systems Science, 8104–12. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-30440-3_479.
Pełny tekst źródłaNakatani, Naoki, Jia-Jia Zheng i Shigeyoshi Sakaki. "Approach of Electronic Structure Calculations to Crystal". W The Materials Research Society Series, 209–55. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0260-6_11.
Pełny tekst źródłaBencini, Alessandro, i Dante Gatteschi. "Spin Hamiltonians". W Electron Paramagnetic Resonance of Exchange Coupled Systems, 20–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-74599-7_2.
Pełny tekst źródłaDarabad, Robabeh Rahimi, Kazunobu Sato, Patrick Carl, Peter Höfer, Raymond Laflamme i Takeji Takui. "Exploiting Quantum Effects in Electron-Nuclear Coupled Molecular Spin Systems". W Electron Spin Resonance (ESR) Based Quantum Computing, 25–50. New York, NY: Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4939-3658-8_2.
Pełny tekst źródłaAbane, M., M. Elchikh i S. Bahlouli. "Spin-Orbit Coupling’s Effect on the Electronic Properties of Heavy Elements-Based Compounds". W Lecture Notes in Networks and Systems, 679–83. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-37207-1_73.
Pełny tekst źródłaShiba, Hiroyuki, i Ryousuke Shiina. "Aspects of Coupled Spin-Orbital Degrees of Freedom in d- and f-Electron Systems". W Springer Series in Solid-State Sciences, 45–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-60041-8_5.
Pełny tekst źródłaTakui, Takeji, Shigeaki Nakazawa, Hideto Matsuoka, Kou Furukawa, Kazunobu Sato i Daisuke Shiomi. "Molecule-Based Exchange-Coupled High-Spin Clusters: Conventional, High-Field/High-Frequency and Pulse-Based Electron Spin Resonance of Molecule-Based Magnetically Coupled Systems". W EPR of Free Radicals in Solids II, 71–162. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-4887-3_3.
Pełny tekst źródłaEckle, Hans-Peter. "Electronic Systems". W Models of Quantum Matter, 585–630. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780199678839.003.0016.
Pełny tekst źródłaCao, Gang, i Lance E. DeLong. "Introduction". W Physics of Spin-Orbit-Coupled Oxides, 3–30. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.003.0001.
Pełny tekst źródłaSipahigil, Alp, i Mikhail D. Lukin. "Quantum optics with diamond color centers coupled to nanophotonic devices". W Current Trends in Atomic Physics, 1–28. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198837190.003.0001.
Pełny tekst źródłaStreszczenia konferencji na temat "Spin-orbit Coupled Electronic Systems"
Cappellini, Giacomo, Lorenzo F. Livi, Lorenzo Franchi, Jacopo Catani, Massimo Inguscio i Leonardo Fallani. "Realization of strongly interacting Fermi gases and spin-orbit coupled systems with an optical clock transition". W 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087447.
Pełny tekst źródłaBrown, Ross. "On the Study of Inhomogeneous Broadening and Related Quantities by Molecular Dynamics and Quantum Chemistry." W Spectral Hole-Burning and Luminescence Line Narrowing: Science and Applications. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/shbl.1992.tub34.
Pełny tekst źródłaCulcer, Dimitrie, Hong Liu, Akihiko Sekine, A. H. MacDonald, Elizabeth Marcellina i A. R. Hamilton. "Anomalies in magneto-transport in spin-orbit coupled systems". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2323582.
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