Gotowa bibliografia na temat „Spacers gate”
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Artykuły w czasopismach na temat "Spacers gate"
Weng, Chun Jen. "Etching Effects of Nanotechnology Fabrication on CMOS Transistor Gate Wafer Manufacturing Process Integration". Advanced Materials Research 154-155 (październik 2010): 938–41. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.938.
Pełny tekst źródłaWeng, Chun Jen. "Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration". Applied Mechanics and Materials 83 (lipiec 2011): 91–96. http://dx.doi.org/10.4028/www.scientific.net/amm.83.91.
Pełny tekst źródłaWylie, Ian W., i N. Garry Tarr. "A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)". Canadian Journal of Physics 69, nr 3-4 (1.03.1991): 174–76. http://dx.doi.org/10.1139/p91-027.
Pełny tekst źródłaKumar, Padakanti Kiran, Bukya Balaji i Karumuri Srinivasa Rao. "Design and analysis of asymmetrical low-k source side spacer halo doped nanowire metal oxide semiconductor field effect transistor". International Journal of Electrical and Computer Engineering (IJECE) 13, nr 3 (1.06.2023): 3519. http://dx.doi.org/10.11591/ijece.v13i3.pp3519-3529.
Pełny tekst źródłaWostyn, Kurt, Karine Kenis, Hans Mertens, Adrian Vaisman Chasin, Andriy Hikavyy, Frank Holsteyns i Naoto Horiguchi. "Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer". Solid State Phenomena 282 (sierpień 2018): 126–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.126.
Pełny tekst źródłaGuo, Mengxue, Weifeng Lü, Ziqiang Xie, Mengjie Zhao, Weijie Wei i Ying Han. "Effects of Symmetric and Asymmetric Double-Layer Spacers on a Negative-Capacitance Nanosheet Field-Effect Transistor". Journal of Nanoelectronics and Optoelectronics 17, nr 6 (1.06.2022): 873–82. http://dx.doi.org/10.1166/jno.2022.3266.
Pełny tekst źródłaDurfee, Curtis, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor i in. "Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors". ECS Transactions 112, nr 1 (29.09.2023): 45–52. http://dx.doi.org/10.1149/11201.0045ecst.
Pełny tekst źródłaConvertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund i Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities". Materials 12, nr 1 (27.12.2018): 87. http://dx.doi.org/10.3390/ma12010087.
Pełny tekst źródłaLi, Junjie, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du i in. "Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors". Nanomaterials 10, nr 4 (20.04.2020): 793. http://dx.doi.org/10.3390/nano10040793.
Pełny tekst źródłaBacquié, Valentin, Aurélien Tavernier, François Boulard, Olivier Pollet i Nicolas Possémé. "Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices". Journal of Vacuum Science & Technology A 39, nr 3 (maj 2021): 033005. http://dx.doi.org/10.1116/6.0000871.
Pełny tekst źródłaRozprawy doktorskie na temat "Spacers gate"
Jaffal, Moustapha. "Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.
Pełny tekst źródłaOver the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
Bertram, David. "Game-Space". Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31140.
Pełny tekst źródłaMaster of Architecture
Calderon, Ana C. M. A. "Understanding game semantics through coherence spaces". Thesis, University of Bath, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580675.
Pełny tekst źródłaBalog, Michael Rosen Warren A. "The automated compilation of comprehensive hardware design search spaces of algorithmic-based implementations for FPGA design exploration /". Philadelphia, Pa. : Drexel University, 2007. http://hdl.handle.net/1860/1770.
Pełny tekst źródłaBendele, Rigby L. "NEGOTIATING MASCULINITY IN TABLETOP ROLEPLAYING GAME SPACES". VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/5805.
Pełny tekst źródłaMeldgaard, Betty Li. "Perception, action, and game space". Universität Potsdam, 2008. http://opus.kobv.de/ubp/volltexte/2008/2462/.
Pełny tekst źródłaBrown, Eric L. "A quadratic partial assignment and packing model and algorithm for the airline gate assignment problem". Thesis, This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-07212009-040541/.
Pełny tekst źródłaGingold, Chaim. "Miniature gardens and magic crayons : games, spaces and worlds". Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17671.
Pełny tekst źródłaEbert, Dean A. "Design and development of a configurable fault-tolerant processor (CFTP) for space applications". Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Jun%5FEbert.pdf.
Pełny tekst źródłaThesis advisor(s): Herschel H. Loomis, Alan A. Ross. Includes bibliographical references (p. 219-224). Also available online.
Humberd, Caleb J. "A compression algorithm for field programmable gate arrays in the space environment". Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/10623.
Pełny tekst źródłaKsiążki na temat "Spacers gate"
Linda, Evans, red. Hell's gate. Riverdale, NY: Baen, 2006.
Znajdź pełny tekst źródłaMarroquin-Burr, Kristina. Learn to draw Angry Birds space. [Irvine, Calif.]: Walter Foster Pub., Inc., 2013.
Znajdź pełny tekst źródłaChampion, Jill. The official guide to Roger Wilco's space adventures. Wyd. 2. Greensboro, N.C: Compute Books, 1993.
Znajdź pełny tekst źródłaC, Leinecker Richard, red. The official guide to Roger Wilco's space adventures. Greensboro, N.C: Compute Books, 1991.
Znajdź pełny tekst źródłaJohn, Peel. Where in space is Carmen Sandiego? Racine, Wis: Western Pub. Co., 1993.
Znajdź pełny tekst źródłaBarham, Pamela. Winning space: Game strategies for netball. [U.K.]: Network Coaching International, 1994.
Znajdź pełny tekst źródła1959-, Maas Winy, MVRDV (Firm), Delft School of Design, Berlage Instituut, Massachusetts Institute of Technology i cThrough (Firm), red. Space fighter: The evolutionary city (game:). Barcelona: Actar, 2007.
Znajdź pełny tekst źródłaKahn, Charles M. The good, the bad, and the ugly: Coalition proof equilibrium in games with infinite strategy spaces. [Urbana, Ill.]: College of Commerce and Business Administration, University of Illinois at Urbana-Champaign, 1989.
Znajdź pełny tekst źródłaErikson, Steven. Deadhouse gates. New York: Tor, 2005.
Znajdź pełny tekst źródłaErikson, Steven. Deadhouse Gates. London: Transworld, 2009.
Znajdź pełny tekst źródłaCzęści książek na temat "Spacers gate"
Jungkeit, Steven R. "The Infinite Gaze". W Spaces of Modern Theology, 41–81. New York: Palgrave Macmillan US, 2012. http://dx.doi.org/10.1057/9781137269027_2.
Pełny tekst źródłaKaushik, Brajesh Kumar, Sudeb Dasgupta i Pankaj Kumar Pal. "Tri-Gate FinFET Technology and Its Advancement". W Spacer Engineered FinFET Architectures, 11–36. Boca Raton : Taylor & Francis, CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315191089-2.
Pełny tekst źródłaCaracciolo, Marco. "Game Space". W On Soulsring Worlds, 26–41. London: Routledge, 2024. http://dx.doi.org/10.4324/9781032684024-3.
Pełny tekst źródłaRiviere, Alex. "Space". W Game Audio Mixing, 110–20. London: Focal Press, 2023. http://dx.doi.org/10.4324/9781003351146-10.
Pełny tekst źródłaSanliturk, Cagri. "Game of being state". W Civic Spaces and Desire, 68–81. New York : Routledge, 2019.: Routledge, 2019. http://dx.doi.org/10.4324/9781351184137-5.
Pełny tekst źródłaYoung, Anthony. "Game Changer: SpaceX". W The Twenty-First Century Commercial Space Imperative, 15–28. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18929-1_2.
Pełny tekst źródłaEspinola-Arredondo, Ana, i Felix Muñoz-Garcia. "Nash Equilibria in Games with Continuous Action Spaces". W Game Theory, 77–103. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-37574-3_4.
Pełny tekst źródłaLeeney, Cathy, i Deirdre McFeely. "Social Class, Space, and Containment in 1950s Ireland". W The Golden Thread, 233–56. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800859463.003.0018.
Pełny tekst źródła"Video/Game". W Architectonics of Game Spaces, 71–84. transcript-Verlag, 2019. http://dx.doi.org/10.14361/9783839448021-005.
Pełny tekst źródłaBinotto, Johannes. "Video/Game". W Architectonics of Game Spaces, 71–84. transcript Verlag, 2019. http://dx.doi.org/10.1515/9783839448021-005.
Pełny tekst źródłaStreszczenia konferencji na temat "Spacers gate"
Dhiman, Gaurav, i Rajeev Pourush. "Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers". W 2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3). IEEE, 2020. http://dx.doi.org/10.1109/iconc345789.2020.9117425.
Pełny tekst źródłaKola, Sekhar Reddy, Yiming Li- i Narasimhulu Thoti. "Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers". W 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241603.
Pełny tekst źródłaSachid, Angada B., Roswald Francis, Maryam Shojaei Baghini, Dinesh K. Sharma, Karl-Heinz Bach, Reinhard Mahnkopf i V. Ramgopal Rao. "Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?" W 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796790.
Pełny tekst źródłaMalviya, Abhishek Kumar, i R. K. Chauhan. "Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers". W 2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT). IEEE, 2017. http://dx.doi.org/10.1109/icetcct.2017.8280327.
Pełny tekst źródłaMiyashita, T., K. Ookoshi, A. Hatada, K. Ikeda, Y. S. Kim, M. Nishikawa, T. Sakoda, K. Hosaka i H. Kurata. "Design and Optimization of Gate Sidewall Spacers to Achieve 45nm Ground Rule for High-performance Applications". W 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-5-1.
Pełny tekst źródłaGong, Jun-Wei, Yeh-Chang Fang, Ta-Yung Wang, Jia-Rui Hu, Chung-I. Chang, Shih-Jung Lee i Jon Opsal. "Thickness and Topography of Dielectric Dual-Sidewall Spacers on Metal Gate of DRAM Extracted by Spectroscopic Ellipsometry". W 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference. IEEE, 2007. http://dx.doi.org/10.1109/asmc.2007.375115.
Pełny tekst źródłaYang, Z. Y., Y. A. Huang, H. C. Lin, P. W. Li, K. M. Chen i G. W. Huang. "Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications". W 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421455.
Pełny tekst źródłaYou, W. X., i P. Su. "Investigation of Gate-Length Dependence of Memory Window for 2D Ferroelectric-FET NVMs Considering the Impact of Spacers". W 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.m-4-04.
Pełny tekst źródłaKaur, Prabhjot, Sandeep Singh Gill i Navneet Kaur. "Performance Analysis of Junction Less Accumulation Mode (JAM) Bulk FinFETs Using Dual- K Spacers at 15nm Gate Length". W 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI). IEEE, 2018. http://dx.doi.org/10.1109/icoei.2018.8553706.
Pełny tekst źródłaHuang, Po-Yen, Xue-Han Chen, Haoran Wang, Shawn S. H. Hsu i Roy K. Y. Wong. "Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers". W 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024. http://dx.doi.org/10.1109/ispsd59661.2024.10579584.
Pełny tekst źródłaRaporty organizacyjne na temat "Spacers gate"
Aleksandrov, Pavlo. NEWS GAMES IN THE UKRAINIAN MEDIA SPACE DURING THE FULL-SCALE RUSSIAN INVASION. Ivan Franko National University of Lviv, marzec 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12140.
Pełny tekst źródłaPtsuty, Norbert, Andrea Habeck i Christopher Menke. Shoreline position and coastal topographical change monitoring at Gateway National Recreation Area: 2017–2022 and 2007–2022 trend report. National Park Service, sierpień 2023. http://dx.doi.org/10.36967/2299536.
Pełny tekst źródłaDatsyshyn, Chrystyna. FUNCTIONAL PARAMETERS OF ANTHROPONYM AS ONE OF THE VARIETIES OF FACTUAL MATERIAL IN THE MEDIA TEXT. Ivan Franko National University of Lviv, marzec 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12169.
Pełny tekst źródłaKourkoutas, Konstantinos, Begonya Saez, Veronica Junjan, Anders Riel Müller, Wiro Kuipers, Fabio Hernández Palacio, Kristiane Marie Fjær Lindland, Tina-Simone Neset i Sara Malmgren. ECIU Position Paper on Living Labs and Experimentation Spaces: Recommendations and insights about the potential of Living Labs as innovation and learning platforms in the ECIU University. University of Stavanger, kwiecień 2024. http://dx.doi.org/10.31265/usps.276.
Pełny tekst źródłaDudoit, Alain. The urgency of the first link: Canada’s supply chain at breaking point, a national security issue. CIRANO, lipiec 2023. http://dx.doi.org/10.54932/cxwf7311.
Pełny tekst źródłaSlotiuk, Tetiana. CONCEPT OF SOLUTIONS JOURNALISM MODEL: CONNOTION, FUNCTIONS, FEATURES OF FUNCTIONING. Ivan Franko National University of Lviv, marzec 2021. http://dx.doi.org/10.30970/vjo.2021.50.11097.
Pełny tekst źródłaDemchenko, Dmytro. DEMASSIFICATION OF SOCIAL PROCESSES IN THE CONTEXT OF DIGITAL COMMUNICATION (TO THE PROBLEM OF THE DICHOTOMY OF “ELITE-MASS” AS A POLITICAL COMMUNICATION PARADOX). Ivan Franko National University of Lviv, marzec 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12171.
Pełny tekst źródłaLevantovych, Oksana. COVID 19 MEDIA COVERAGE: AN ANALYSIS OF HEORHII POCHEPTSOV’S VIEW. Ivan Franko National University of Lviv, luty 2021. http://dx.doi.org/10.30970/vjo.2021.49.11061.
Pełny tekst źródłaYatsymirska, Mariya. SOCIAL EXPRESSION IN MULTIMEDIA TEXTS. Ivan Franko National University of Lviv, luty 2021. http://dx.doi.org/10.30970/vjo.2021.49.11072.
Pełny tekst źródłaOpening the gate: A resource to support Victorian schools to activate school grounds and open spaces for community use. VicHealth, wrzesień 2024. http://dx.doi.org/10.37309/2023.pa1068.
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