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Artykuły w czasopismach na temat "Solidification defects"
Elmquist, Lennart, Kaisu Soivio i Attila Diószegi. "Cast Iron Solidification Structure and how it is Related to Defect Formation". Materials Science Forum 790-791 (maj 2014): 441–46. http://dx.doi.org/10.4028/www.scientific.net/msf.790-791.441.
Pełny tekst źródłaNan, Hong Yan, Li Lin Chen, Guo Fa Mi i Jiao Ma. "Application of Numerical Simulation and Optimization on Tensioner Pulley Bracket". Advanced Materials Research 529 (czerwiec 2012): 186–89. http://dx.doi.org/10.4028/www.scientific.net/amr.529.186.
Pełny tekst źródłaMooraj, Shahryar, Jiaqi Dong, Kelvin Y. Xie i Wen Chen. "Formation of printing defects and their effects on mechanical properties of additively manufactured metal alloys". Journal of Applied Physics 132, nr 22 (14.12.2022): 225108. http://dx.doi.org/10.1063/5.0132137.
Pełny tekst źródłaMeshram, Suresh, i Madhusudhan Reddy. "Influence of Tool Tilt Angle on Material Flow and Defect Generation in Friction Stir Welding of AA2219". Defence Science Journal 68, nr 5 (12.09.2018): 512–18. http://dx.doi.org/10.14429/dsj.68.12027.
Pełny tekst źródłaYu, J. K., Q. Yan i Pin Yang Fang. "Solidification of Aluminum Infiltrated Composites". Materials Science Forum 475-479 (styczeń 2005): 901–4. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.901.
Pełny tekst źródłaHuo, Miao, Chuyue Chen, Hangyue Jian, Wenchao Yang i Lin Liu. "The Stray Grains from Fragments in the Rejoined Platforms of Ni-Based Single-Crystal Superalloy". Metals 13, nr 8 (15.08.2023): 1470. http://dx.doi.org/10.3390/met13081470.
Pełny tekst źródłaKorojy, B., L. Ekbom i H. Fredriksson. "Microsegregation and Solidification Shrinkage of Copper-Lead Base Alloys". Advances in Materials Science and Engineering 2009 (2009): 1–9. http://dx.doi.org/10.1155/2009/627937.
Pełny tekst źródłaHassan, Mohamed Abubakr, Mahmoud Hassan, Chi-Guhn Lee i Ahmad Sadek. "Monitoring Variability in Melt Pool Spatiotemporal Dynamics (VIMPS): Towards Proactive Humping Detection in Additive Manufacturing". Journal of Manufacturing and Materials Processing 8, nr 3 (29.05.2024): 114. http://dx.doi.org/10.3390/jmmp8030114.
Pełny tekst źródłaKhan, Muhammad Azhar Ali. "Simulation Based Mold Design Optimization of a Spring Flap Casting". Solid State Phenomena 305 (czerwiec 2020): 178–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.305.178.
Pełny tekst źródłaXu, Qing Yan, Bai Cheng Liu, Zuo Jian Liang, Jia Rong Li, Shi Zhong Liu i Ha Llong Yuan. "Modeling of Unidirectional Growth in a Single Crystal Turbine Blade Casting". Materials Science Forum 508 (marzec 2006): 111–16. http://dx.doi.org/10.4028/www.scientific.net/msf.508.111.
Pełny tekst źródłaRozprawy doktorskie na temat "Solidification defects"
Brewster, G. J. J. "Solidification and heat-treatment related defects in single crystal nickel-base superalloys". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596900.
Pełny tekst źródłaKhalajzadeh, Vahid. "Modeling of shrinkage porosity defect formation during alloy solidification". Diss., University of Iowa, 2018. https://ir.uiowa.edu/etd/6155.
Pełny tekst źródłaZareie, Rajani Hamid Reza. "Development of a three-dimensional multi-scale model to study the formation of solidification defects in fusion welding". Thesis, University of British Columbia, 2016. http://hdl.handle.net/2429/57601.
Pełny tekst źródłaApplied Science, Faculty of
Engineering, School of (Okanagan)
Graduate
Lantreibecq, Arthur. "Détermination de la nature et de l'origine des défauts cristallins dans le silicium monolike". Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30311/document.
Pełny tekst źródłaMonolike silicon (ML Si), is a material obtained by directional solidification on monocrystalline seeds and dedicated to photovoltaic applications. This thesis focuses on the structural quality of these crystals of several hundred kilograms that contain defects that potentially affect the photoelectric yield. The goal is to understand the mechanisms by which these defects nucleate and multiply in order to inhibit them. Since the development of sub-grain boundaries (SGB), which are the main factors for the losses of photovoltaic yields, is potentially related to the thermomechanical stresses that develop during a thermal cycle, we simulated numerically the temperatures of an oven containing an ingot over a complete cycle (fusion, growth, cooling). From the temperature values, we were able to establish a map of the thermomechanical stresses as well as their temporal evolution. In parallel, we used several structural and electrical characterization techniques to analyze crystalline defects and their distribution in the ingot at different scales. During the cycle, a first maximum of stress at the end of the heating stage generates dislocations and precursors of SGB in the seed. The second stress maximum at the end of solidification / start of cooling stage leads to the final organization of background dislocations present in the whole ingot. Once the SGB appear, they extend laterally as the solid-liquid interface progresses. These SGB have a structure consisting of sessile and vertical dislocations, which follow the solidification front and also mobile dislocations that interact with this pre-existing structure. The integration of these mobile dislocations, which can occur just below the solid-liquid interface or during cooling, increases the misorientation of the SGB. [...]
Ouaddah, Hadjer. "Study of crystalline defects issued from silicon solidification : effect of impurities and correlation between crystallography, physicochemical and electrical properties". Electronic Thesis or Diss., Aix-Marseille, 2021. http://theses.univ-amu.fr.lama.univ-amu.fr/211214_OUADDAH_370ltw379yep573fxydon897z_TH.pdf.
Pełny tekst źródłaAn experimental approach including several techniques was used to characterize structural defects issued from the solidification by in situ X-ray imaging during solidification and by complementary ex situ techniques to characterize and quantify the grain structure, crystalline quality, and deformation. The composition and segregation of impurities were measured in correlation with the defect characterization and correlated to minority carrier lifetime measurements. The analysis shows significant influence of light impurities and metallic impurities on Si solidification and on the electrical properties. In the presence of light impurities, a higher frequency of grain nucleation is observed, it is linked to the presence of precipitates. The resulting grain structure is constituted by a higher proportion of high order twin and of random angle grain boundaries compared to the case of low contaminated samples. Moreover, local deformations are induced by the presence of SiC and are at the origin of SABGs (small angle grain boundaries) formation. The electrical properties are degraded (lower and inhomogeneous minority carrier lifetime) in the presence of light impurities compared to the case of pure Si materials. In Cu contaminated samples, no significant effect on the grain structure was evidenced. However, coherent Σ3 twin boundaries, which are defects of high crystalline quality, can be active in presence of Cu. This observation was correlated to Cu segregation at the level of these grain boundaries. During this study, recent progress concerning the in situ characterization of the defect formation dynamics during solidification allowed to open new prospects
Klein, Cândida Cristina. "Segregação de índio em cristais Ga1-xInxSb dopados com telúrio obtidos pelo método Bridgman vertical". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2016. http://hdl.handle.net/10183/147761.
Pełny tekst źródłaTernary compound semiconductors, including Ga1-xInxSb, have been subject of interest of researchers and microelectronics industry because of the possibility of adjusting the lattice constant, as well as the corresponding modification in the band gap energy, and in the optical absorption and emission range, by varying the mole fraction x. The flexibility of their structural properties makes this compound suitable as substrates for epitaxy of other ternary and quaternary compounds, in the formation of mono- and heterojunctions. The most economical way to obtain semiconductor substrates is by crystal growth from the liquid phase. However, the parameters governing the outcoming of Ga1-xInxSb ingots with commercial quality, from liquid phase, are not well defined. Indium tends to segregate to the liquid, since its segregation coefficient is less than the unity (k < 1), resulting in a varied compositional profile along the ingot. As the binary GaSb and InSb have intrinsic defects configurations that originate opposite conductivities, type p and type n, respectively, the change in the alloy composition, while growing, probably results in a modification of the concentration on each of these defects. Doping with tellurium is an alternative to minimize the indium segregation and decrease the density of point defects, therefore improving the structural quality of Ga1-xInxSb crystals obtained through the conventional Bridgman method. Thus, ternary Ga1-xInxSb crystals were grown by vertical Bridgman method with and without stirring the melt during the synthesis, with 10% and 20% initial molar fraction of indium and some of them were tellurium-doped at 1020 atoms/cm3. The structural characterization regarding linear, interfacial, and volumetric defects formation was performed by using images obtained through optical, scanning and transmission electron microscopy. The compositional homogeneity and phase distribution was assessed by energy-dispersive spectroscopy measurements. Resistivity and Hall Effect measurements were used for the electrical characterization, while the optical transmittance and the band gap energy were examined by FTIR spectroscopy. Diffraction patterns obtained by transmission electron microscopy were used to evaluate the crystallinity of the samples and determine the lattice parameter. The results indicate that tellurium acts in a compensatory way, minimizing indium segregation and contributing to the compositional homogeneity and defect reduction, especially in dislocations. In addition, it changes the conductivity of Ga1-xInxSb to n-type, even in mole fraction of In lower than x = 0.5, reducing the number of positive charges on the network assigned to GaSb and VGaGaSb defects, thus increasing the concentration of charge carriers and reducing the resistivity. In high doping condition, it reduces the optical transmittance in the infrared region and increases the energy of the band gap by the Burstein-Moss Effect. The evaluation of Ga1-xInxSb crystals, doped and undoped, grown by the conventional Bridgman method contributed to the understanding of dopants behavior in ternary compound semiconductors.
Riberi-Béridot, Thècle. "In situ characterization by X-ray synchrotron imaging of the solidification of silicon for the photovoltaic applications : control of the grain structure and interaction with the defects and the impurities". Electronic Thesis or Diss., Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0412.
Pełny tekst źródłaDuring this thesis, we studied in situ the solidification of silicon with X-synchrotron imaging. The two techniques used during solidification are radiography and Bragg diffraction and they allow characterizing: dynamic growth mechanisms, growth kinetics, grain nucleation and competition, lattice deformation and dislocation related strain fields. These observations are combined with ex situ characterizations to study the crystallographic orientation, the deformations of the crystal lattice as well as the concentrations of light impurities such as carbon and oxygen. The complementarity of these techniques makes it possible to study and to better understand: the physical phenomena related to the formation of the final grain structure. Results concerning the growth kinetics of the solid-liquid interface and of the {111} facets, the establishment of the grain structure, the importance of twinning, the effect of light impurities, the strain field related to growth and grain competition and dislocations are discussed in the manuscript
Castro, Roman Manuel de Jesús. "Étude expérimentale et modélisation de la solidification des pièces coulées en fonte à graphite spheroidal : influence de la vitesse de refroidissement et de l'inoculation". Vandoeuvre-les-Nancy, INPL, 1991. http://docnum.univ-lorraine.fr/public/INPL_T_1991_CASTRO_ROMAN_M_J.pdf.
Pełny tekst źródłaRiberi-Béridot, Thècle. "In situ characterization by X-ray synchrotron imaging of the solidification of silicon for the photovoltaic applications : control of the grain structure and interaction with the defects and the impurities". Thesis, Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0412/document.
Pełny tekst źródłaDuring this thesis, we studied in situ the solidification of silicon with X-synchrotron imaging. The two techniques used during solidification are radiography and Bragg diffraction and they allow characterizing: dynamic growth mechanisms, growth kinetics, grain nucleation and competition, lattice deformation and dislocation related strain fields. These observations are combined with ex situ characterizations to study the crystallographic orientation, the deformations of the crystal lattice as well as the concentrations of light impurities such as carbon and oxygen. The complementarity of these techniques makes it possible to study and to better understand: the physical phenomena related to the formation of the final grain structure. Results concerning the growth kinetics of the solid-liquid interface and of the {111} facets, the establishment of the grain structure, the importance of twinning, the effect of light impurities, the strain field related to growth and grain competition and dislocations are discussed in the manuscript
Banos, Julien. "Modélisation du procédé de refusion à l’arc sous vide : Échanges thermiques et défauts de solidification". Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0117.
Pełny tekst źródłaThe Vacuum Arc Remelting (VAR) process is used in the production of high-added value metals such as titanium alloys or nickel-based superalloys for the aerospace industry. The control of solidification conditions is an important industrial issue in order to process ingots of adequate chemical homogeneity and free of solidification defects. The work presented in this manuscript aims at improving the description of heat exchanges in a VAR process model (SOLAR) and at proposing a new approach for the prediction of segregated channels type solidification defects. First, the description of the heat exchanges in the model between the electrode, the ingot, the mould and the cooling circuit has been improved. These modifications were validated by comparing the numerical results with measurements from real industrial melts. An original experimental apparatus for measuring the external mould temperature adapted to industrial melts was designed. This apparatus was used during an experimental campaign on an industrial site during the remelting of a titanium alloy. The measurements obtained were compared with the numerical results from SOLAR. These two activities led to a first implementation of the side-arcing phenomenon in the model. In parallel, a multi-scale numerical approach was developed to predict the formation of segregated channels as a function of local solidification conditions. A first study on a Sn-Pb alloy was carried out and a mathematical criterion was calculated from the results. This first study shows a much lower impact of the thermal gradient on the formation of segregated channels than that generally considered in the literature
Książki na temat "Solidification defects"
Campbell, F. C., red. Metals Fabrication. ASM International, 2013. http://dx.doi.org/10.31399/asm.tb.mfub.9781627083089.
Pełny tekst źródłaCzęści książek na temat "Solidification defects"
Perez, Nestor. "Solidification Defects". W Phase Transformation in Metals, 461–518. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-49168-0_10.
Pełny tekst źródłaMashaal, M., i M. Amar. "Stationnary Cells in Directional Solidification". W Patterns, Defects and Materials Instabilities, 147–57. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_13.
Pełny tekst źródłaLevine, Herbert. "Directional Solidification: Theoretical Methods and Current Understanding". W Patterns, Defects and Materials Instabilities, 123–33. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_11.
Pełny tekst źródłaCladis, P. E., J. T. Gleeson i P. L. Finn. "New Instabilities in Directional Solidification of Succinonitrile". W Patterns, Defects and Materials Instabilities, 135–46. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_12.
Pełny tekst źródłaJamgotchian, H., R. Trivedi i B. Billia. "Nonlinear Dynamics in Cellular Solidification in Presence of Defects". W Interactive Dynamics of Convection and Solidification, 105–8. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2809-4_18.
Pełny tekst źródłaSaeedipour, Mahdi, Simon Schneiderbauer, Stefan Pirker i Salar Bozorgi. "Prediction of Surface Porosity Defects in High Pressure Die Casting". W Advances in the Science and Engineering of Casting Solidification, 155–63. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093367.ch19.
Pełny tekst źródłaSaeedipour, Mahdi, Simon Schneiderbauer, Stefan Pirker i Salar Bozorgi. "Prediction of Surface Porosity Defects in High Pressure Die Casting". W Advances in the Science and Engineering of Casting Solidification, 155–63. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48117-3_19.
Pełny tekst źródłaSabau, Adrian S. "Modeling of Casting Defects in an Integrated Computational Materials Engineering Approach". W Advances in the Science and Engineering of Casting Solidification, 231–40. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093367.ch28.
Pełny tekst źródłaSabau, Adrian S. "Modeling of Casting Defects in an Integrated Computational Materials Engineering Approach". W Advances in the Science and Engineering of Casting Solidification, 231–40. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48117-3_28.
Pełny tekst źródłaEskin, D. G. "Structure and Casting Defects of Aluminum Billets Produced by Direct-Chill Casting". W Advances in the Science and Engineering of Casting Solidification, 73–80. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093367.ch10.
Pełny tekst źródłaStreszczenia konferencji na temat "Solidification defects"
Gor, S., T. Hohlweck, D. Fritsche, A. Schacht, N. Wolff, B. Pustal, H. Heinemann, A. Bührig-Polaczek, C. Hopmann i K. Bobzin. "Potential Use of Plasma Sprayed Heating Coatings in Die Casting and Injection Molding". W ITSC2022. DVS Media GmbH, 2022. http://dx.doi.org/10.31399/asm.cp.itsc2022p0220.
Pełny tekst źródłaWielage, B., S. Steinhäuser, W. Milewski i H. Pokhmurska. "Solidification of Detonation Sprayed Ceramic Coating Melted by CO2 Laser". W ITSC2002, redaktorzy C. C. Berndt i E. Lugscheider. Verlag für Schweißen und verwandte Verfahren DVS-Verlag GmbH, 2002. http://dx.doi.org/10.31399/asm.cp.itsc2002p1020.
Pełny tekst źródłaGhosh, S., i J. Choi. "Three-Dimensional Transient Finite Element Analysis for Microstructure Formation and Residual Stresses in Laser-Aided DMD Process". W ASME 2004 Heat Transfer/Fluids Engineering Summer Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ht-fed2004-56359.
Pełny tekst źródłaRakita, Milan, i Qingyou Han. "Simulation of Solidification Defects for Prediction of Dross Formation in Aluminum 5182 Remelt Secondary Ingot". W ASME 2009 International Manufacturing Science and Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/msec2009-84160.
Pełny tekst źródłaWang, W. B., X. H. Yang, Q. C. Zhang i T. J. Lu. "Solidification Analysis of Density-Graded Closed-Cell Metallic Foam Under Constant Temperature Boundary Condition". W ASME 2016 5th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/mnhmt2016-6719.
Pełny tekst źródłaHossain, Md Shahjahan, Russell Krenek, Hossein Taheri i Fadwa Dababneh. "Ultrasonic Phased Array Technique for Defect Detection and Sizing in Heavy-Walled Cast Components". W ASME 2020 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/imece2020-23319.
Pełny tekst źródłaZhou, J., H. L. Tsai i P. C. Wang. "Transport Phenomena and Defect Formation in Laser Welding of Zinc-Coated Steels". W ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59286.
Pełny tekst źródłaWang, Deming, Harry S. Whitesell i Tony Overfelt. "Two-Dimensional Combined Radiation and Conduction Transient Heat Transfer in Directional Solidification". W ASME 1999 Design Engineering Technical Conferences. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/detc99/cie-9050.
Pełny tekst źródłaFang, Haisheng, Lili Zheng i Hui Zhang. "Control of Flow Pattern and Solidification Interface Shape in an Induction Heated Czochralski Crystal Growth System". W ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32288.
Pełny tekst źródłaFutas, Peter, Alena Pribulova, Jozef Petrik, Peter Blasko i Vladimir Sabik. "THE NUMERICAL SIMULATION OF CASTING PROCESS OF CAST MADE FROM AUSTEMPERED DUCTILE IRON (ADI)". W 23rd SGEM International Multidisciplinary Scientific GeoConference 2023. STEF92 Technology, 2023. http://dx.doi.org/10.5593/sgem2023/2.1/s07.14.
Pełny tekst źródłaRaporty organizacyjne na temat "Solidification defects"
Asta, M. D., S. H. Davis, D. N. Seidman, P. W. Voorhees, T. M. Pollock, C. F. Woodward i J. E. Spowart. Defects Associated with Solidification of Melt-Processed Superalloys for the Aerospace Industry. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 2009. http://dx.doi.org/10.21236/ada501481.
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