Gotowe bibliografie tematyczne / Solid thin film metals

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji
  6. Raporty organizacyjne

Gotowa bibliografia na temat „Solid thin film metals”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Solid thin film metals"

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Dufner, D. C. "HREM observations of internetallic alloy formation in Pt-Sn thin films". Proceedings, annual meeting, Electron Microscopy Society of America 50, nr 1 (sierpień 1992): 52–53. http://dx.doi.org/10.1017/s0424820100120667.

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The general goal of this research is to clarify mechanisms of solid state reactions at the atomic level as a step in the rationalization of macroscopic reaction behavior in solids. A study of intermetallic alloy formation resulting from interdiffusion of metals in thin films can be made by HREM. In this work, reactions between Pt and Sn in thin films are studied to elucidate mechanisms for structural and compositional changes during the interdiffusion process.Thin films of Pt and Sn used in this study were prepared by the two-film method introduced by Shiojiri. Few hundred angstroms of Pt were vacuum-deposited onto holey carbon films mounted on TEM grids. Sn films with an average thickness of 200Å were created by evaporation at rates of 15-30 Å/sec onto air-cleaved KBr substrates. The Sn films were wet-stripped and collected on the holey Pt grids. Figure 1 shows a cross-section schematic of a Pt-Sn couple. While this two-film arrangement did not allow observations of the actual reaction interface, microtomy was used to produce cross-sections.
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Dai, Wangqi, Ziqiang Ma, Donglei Wang, Siyu Yang i Zhengwen Fu. "Functional multilayer solid electrolyte films for lithium dendrite suppression". Applied Physics Letters 121, nr 22 (28.11.2022): 223901. http://dx.doi.org/10.1063/5.0122984.

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The improvement of the interface between a lithium metal and a solid electrolyte layer is very important for the application of a lithium anode coated by solid electrolytes in lithium metal batteries. In order to address the issues of interface performance and compatibility between solid electrolyte films prepared by magnetron sputtering and lithium metals and the suppression of lithium dendrite during the cycling, a three-layer interface solid electrolyte film based on carbon-doped lithium phosphate oxynitride (LiCPON) was employed for coating a lithium metal. The sandwich structure of LiCPON by introducing an ultra-thin lithium niobium oxynitride (LiNbON) layer prepared by sputtering LiNbO3 in nitrogen ambient can be confirmed by time-of-flight secondary ion mass spectrometry. Atomic force microscopy data indicated that the surface of the LiCPON thin film with the sandwich structure is flatter and smoother than that of the LiCPON thin film on the lithium metal. The interface impedance of the symmetric battery based on the sandwich structure of the LiCPON coating lithium metal was reduced from 512.2 to 65.4 Ω, and the symmetric battery stable cycles from 300 h with an overpotential of more than 200 mV to 400 h with low overpotential of about 77 mV. These results suggest that functional multilayer solid electrolyte films become an effective method for protecting lithium. The incorporation of ultra-thin LiNbON into the LiCPON thin film could significantly decrease interface impedance between the lithium metal and solid electrolyte layer.
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Suenaga, Seiichi, Miho Koyama, Shinji Arai i Masako Nakahashi. "Solid-state reactions of the Ag–Cu–Ti thin film–Al2O3 substrate system". Journal of Materials Research 8, nr 8 (sierpień 1993): 1805–11. http://dx.doi.org/10.1557/jmr.1993.1805.

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A new interpretation of the reaction mechanism between active metal thin-film filler and ceramic substrate is proposed. The authors predict the possibility of prebonding reactions, prior to melting of the filler, at the interface of the system described above. To prove this, solid-state reactions of Ag–Cu–Ti thin films on sapphire substrates have been studied with Auger electron spectroscopy (AES) and x-ray diffraction (XRD). Reaction process and products have been clarified at the temperature just below the melting point of the filler. It is evident that Cu3Ti3O (diamond structure of Fd3m) is formed by the reaction between Cu3Ti and O which results from the reduction of sapphire. It seems that Cu3Ti3O contributes to bonding between metals and sapphire as an intermediate phase.
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Metwalli, Ezzeldin. "Growth kinetics of metal nanoparticles on solid surfaces". Acta Crystallographica Section A Foundations and Advances 70, a1 (5.08.2014): C1176. http://dx.doi.org/10.1107/s2053273314088238.

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Dispersed metal nanoparticles (nps) in a polymer matrix are essential for many technological applications, including biological imaging, thin film technology, magnetic recording media, optoelectronics and sensors. Real time investigation of the evolution of nps size and shape during the in-situ metal deposition on polymer thin films enables a fine tune of magnetic and electric properties. Metals in their atomic state are deposited on several homopolymer and block copolymer films by DC magnetron system (Metwalli et al., 2013, Metwalli et al., 2008, Buffet et al., 2011). With the unprecedented time resolution of 10 milliseconds, the growth kinetics of the metal nps on the polymer surfaces is monitored using in-situ GISAXS. An exponential growth of nps size on all polymer surfaces is observed. Below a certain critical nps size, an initial fast particle growth is due to high particle mobility. A slower kinetics at concentrated metal dispersion is due to the strong metal-metal interactions. The metal growth kinetics study for many chemically different homopolymer films explains the long-time debated high selectivity characteristics of metals towards one block in block copolymer based nano-templates.
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Gill, S. P. A., H. Gao, V. Ramaswamy i W. D. Nix. "Confined Capillary Stresses During the Initial Growth of Thin Films on Amorphous Substrates". Journal of Applied Mechanics 69, nr 4 (20.06.2002): 425–32. http://dx.doi.org/10.1115/1.1469001.

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Changes in substrate curvature indicating the existence of compressive stress in isolated crystallites are commonly observed during the initial stages of thin film deposition of metals on glass or ceramic substrates. Following the suggestion of Abermann et al. (R. Abermann et al., 1978, Thin Solid Films, 52, p. 215), we attribute the origin of this compressive stress to the action of capillary forces during film growth. As new atomic layers are deposited, the capillary forces acting on atoms near the surface are stored as transformation strains in the bulk of the crystallites. To test this concept, we propose three models for evaluating the capillary strains and their induced compressive stresses in a crystalline. A finite element analysis is performed to show that the model predictions agree well with experimental data.
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Feng, Wei, Xin Zhou, Wei Quan Tian, Wei Zheng i PingAn Hu. "Performance improvement of multilayer InSe transistors with optimized metal contacts". Physical Chemistry Chemical Physics 17, nr 5 (2015): 3653–58. http://dx.doi.org/10.1039/c4cp04968c.

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Solid experimental investigations were performed to reveal the specific interface nature of thin-film InSe layered semiconductor/metals. Multilayer InSe transistors showed significantly increased mobilities in the contact sequence of Al, Ti, Cr, and In. The interface nature of the metal/thin-film InSe layered semiconductor was strong van der Waals epitaxial interactions, accompanied with d-orbital overlap.
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Fragnaud, P., i D. M. Schleich. "Thin film components for solid state lithium batteries". Sensors and Actuators A: Physical 51, nr 1 (październik 1995): 21–23. http://dx.doi.org/10.1016/0924-4247(95)01064-5.

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Goikhman, A. Y., S. A. Sheludyakov i E. A. Bogdanov. "Ion Beam Deposition for Novel Thin Film Materials and Coatings". Materials Science Forum 674 (luty 2011): 195–200. http://dx.doi.org/10.4028/www.scientific.net/msf.674.195.

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The Ion Beam Deposition (IBD) technique is not very widespread, but simple and very powerful methodic of thin film preparation, allowing to obtain high quality, smooth and very uniform films on big substrate areas (until 40 cm diameter), by target ablation with high energy particles in high vacuum. For the bombarding of the target is convenient to use the charged particles – ions of Ar, because they are easy to disperse in the electric field. Also, including neutralizing system, allow to obtain high-energy neutrals, irradiating the target, producing thin films from any kind of solid targets: from simple metals to complex conducting and non-conducting stoichiometric alloys. Thus, energy of condensing target particles is an average from several units to tens of eV. In the present contribution, we discuss the possibilities and advantages of IBD technology on application examples, including results of functional properties research of Ti, TiO2, SiO2 and Ag thin films for medicine applications, Ni, NiOx, Co and CoO single layers and structures for spintronics applications, and TiO2-SiO2, Ti-Zr-O-SiO2 multilayer structures for laser mirrors applications, produced by IBD system. Good structural, morphological quality (with roughness ~ 0.3 nm) and high uniformity on big areas along with right phase and stoichiometric state is demonstrated by convenient standard techniques for the structures prepared under the optimized growth conditions.
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Liu, Wen-Yuan, Zheng-Wen Fu i Qi-Zong Qin. "A sequential thin-film deposition equipment for in-situ fabricating all-solid-state thin film lithium batteries". Thin Solid Films 515, nr 7-8 (luty 2007): 4045–48. http://dx.doi.org/10.1016/j.tsf.2006.10.111.

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Paksunchai, Chutima, Chirawat Chantharangsi, Somyod Denchitcharoen, Surasing Chaiyakun i Pichet Limsuwan. "Structure and Morphology Study of Very Thin TiCrN Films Deposited by Unbalanced Magnetron Co-Sputtering". Key Engineering Materials 798 (kwiecień 2019): 152–57. http://dx.doi.org/10.4028/www.scientific.net/kem.798.152.

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Very thin titanium chromium nitride (TiCrN) films with various Ti content were deposited by unbalanced magnetron co-sputtering of Ti and Cr metals. Deposition time was set to 15 min to achieve film thickness ranging from 142 to 190 nm. Silicon wafers and copper grids were used as substrates. The Ti current (ITi) was varied from 0.4 to 1.0 A to achieve the differnt Ti content whereas Cr current (ICr) was fixed to 0.6 A. Effects of the Ti content on structure and morphology of these TiCrN thin films were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD revealed that the films showed crystalline structure with fcc phase and were formed as TixCr1-xN solid solution with a crystallite size of about 13 nm. The TEM result confirmed that the films were polycrystalline. The AFM images of the films showed dome top characteristic with root-mean-square roughness slightly decreasing from 1.643 to 1.273 nm. FE-SEM cross-sectional images exhibited development of film morphology from columnar structure corresponding to zone 1 of Thornton’s structure zone model to fine structure gradually with the increase of the Ti content.
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Rozprawy doktorskie na temat "Solid thin film metals"

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Duff, Daniel Gordon. "Colloidal solutions and thin films of metals". Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333275.

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Zaidi, Syed Zulfiqar Ali. "Electrical and optical properties of some metal/SiO←x thin film systems". Thesis, Brunel University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307488.

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Matz, Dallas Lee. "Raman Spectroscopic Investigations of the Interfacial Chemistry of Solid-State Organic Thin Films with Vapor Deposited Metals for Organic Photovoltaics". Diss., The University of Arizona, 2012. http://hdl.handle.net/10150/268594.

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This dissertation is focused on the elucidation of the reaction chemistry that governs the low work function metal/organic interface found in organic photovoltaics (OPVs). To this end Raman spectroscopy was used in ultra-high vacuum to study Ag, Mg, Ca, and Al metal vapor deposition on pyridine, C₆₀, and graphene. In an effort to understand the interfacial reaction chemistry of complex organic molecules with metal an approach of systematic deconstruction is used where by small molecules, in this case pyridine can be used to gain insight into the chemistry of various chemical functionalities with minimal spectral complication. In the Ag/pyridine system no reaction was observed and the integrity of the film was preserved with spectral enhancement being the only result. This enhancement is achieved via a weak Ag--N bonding interaction. For the other three metals (Mg, Ca, and Al) a great deal of fascinating reaction chemistry can be observed initiated in each case by metal-to-organic electron transfer resulting in the formation of pyridyl radical anions. Once radicals are formed the reaction pathways for each metal diverge resulting in different specific reaction products. In the case of Mg the pyridyl radicals undergo reductive dimerization and yield 4,4'-bipyridine. For Ca the pyridyl radicals follow two pathways either losing a hydride to form the diradical pyridyne or through a pathway of ring opening degrade into amorphous carbon. These results highlight the vast differences possible for reaction chemistry between metals and organics even for simple molecules. Buckminsterfullerene (C₆₀) and fullerene derivatives are ubiquitous to the field of OPVs, thus an understanding of their metal/organic interfacial chemistry is of critical importance to unlocking the full potential of devices. In a similar manner to what can be observed for Ag/pyridine systems the Ag/C₆₀ system shows little more than surface enhancement effects due to a lack of any substantial reactivity and Mg, Ca, and Al exhibit metal-to-organic charge transfer forming C60 anion radicals. These anion radical react to form an as of yet unidentified reaction product in the case of all three reactive metals and in the case of Al these reaction products further degrade forming amorphous carbon. The understanding of this chemistry can be directly correlated to device data found in the literature and provides insight into the formation of interfacial gape states at the metal/organic interface of OPVs. Due to its unique electrical properties and high degree of mechanical stability graphene is starting to play a significant role in the development of OPVs. Because graphene is being used in contact with vapor deposited metal it is of relevance to understand the chemistry that occurs at this interface. While deposition of Ag onto graphene again shows no reaction and only enhancement the enhancement leads to the identification of unique defects in the graphene lattice namely carbon vacancies and C--C bond rotations which lead to Stone-Wales defects which are likely a result of the graphene growth method. Mg, Ca, and Al show strong evidence for n-type doping of electrons into the graphene film due to their work functions being lower than graphene. This data highlight the stability of graphene showing that even though it undergoes a similar metal-to-organic electron transfer as seen with C₆₀ and pyridine there is no further compromise of the films molecular structure.
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RUSSAT, JEAN. "Contribution a l'etude, par spectroscopie de photoelectrons, d'interfaces polymere-metal : application au cas de l'acide polyamique et du polyimide". Paris 7, 1987. http://www.theses.fr/1987PA077237.

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Guttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.

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Triana, Carlos A. "Atomic short-range order, optical and electronic properties of amorphous transition metal oxides : An experimental and theoretical study of amorphous titanium aTiO2 and tungsten aWO3 solid thin-film oxides". Doctoral thesis, Uppsala universitet, Fasta tillståndets fysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-318193.

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Amorphous transition metal oxides [aTMOs], have emerged as innovative functional materials for wide-ranging electronic, optical and energy-related applications. However, no systematic and broadly applicable method exists to assess their atomic-scale correlations, and since the optical and electronic processes are local structure-dependent, still there are not well-stablished mechanisms that suitably explain the physical properties of aTMOs. This thesis presents experimental and theoretical studies of the atomic short-range order, optical and electronic properties, and state-defects induced by Li+-ion-intercalation and oxygen-vacancies in amorphous titanium aTiO2 and tungsten aWO3 thin-film oxides. Those properties play a key role for application in high energy-density Li+-ion batteries and in switchable dynamical modulation of solar-irradiation transmittance for energy efficient "smart windows", where the disorder-dependent Li+-ion-intercalation and oxygen-vacancy-induced defect-states influence charge-carrier transfer mechanisms. After introducing the scope of this thesis, the fundamental theoretical concepts describing the experimental findings on amorphous solids are reviewed. Thereafter, a comprehensive analysis on the optical absorption phenomena experimentally observed in oxygen-deficient and Li+-ion-intercalated aLixTiO2−y and aLixWO3−y thin-films and a discussion on the electrochromic properties are presented. The optical absorption is described in the framework of the small polaron absorption model. Finally, a state-of-the-art systematic procedure involving theory and experiment in a self-consistent computational framework is implemented to unveil the atomic-scale structure of aTiO2 and aWO3, and its role for the electronic properties. The procedure is based in Reverse Monte Carlo [RMC] and Finite Difference Method [FDM] simulations of X-ray-Absorption spectra to construct a disordered theoretical model having the same bonding and coordination distribution as the experimental system. Ab-initio molecular dynamics simulations and density functional theory are then used to assess defect-states induced by Li+-ion-intercalation and oxygen-vacancies in aTiO2 and aWO3 oxides. The schemes introduced in this study offer a consistent route to experimentally and theoretically assess the role of the atomic-scale structure on the optical and electronic properties of aTiO2 and aWO3 and could be extended to the study of other aTMOs. The final results provide crucial insight towards the understanding of optical and electronic mechanisms where disorder-dependent ion-intercalation and oxygen-vacancy-induced localized defect-states influence charge transfer mechanisms of crucial importance for wide ranging optical and energy-related application of aTiO2 and aWO3 oxides.
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Ross, Caroline Anne. "Electromigration in thin metal films". Thesis, University of Cambridge, 1989. https://www.repository.cam.ac.uk/handle/1810/250938.

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Maaroof, Abbas I. "Optical and electrical properties of ultra thin metal films and multilayers". Thesis, University of Reading, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252236.

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Dastoor, Paul Christopher. "The epitaxial growth of thin metal films studied by helium atom scattering". Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.337943.

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Garman, Christopher James. "Electrical characterization of thin film nanostructure templates". Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2188.

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Thesis (M.S.)--West Virginia University, 2001.
Title from document title page. Document formatted into pages; contains vi, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 57-61).
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Książki na temat "Solid thin film metals"

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E, Nebel Christoph, i Ristein Jürgen, red. Thin-film diamond II. Amsterdam: Elsevier, 2004.

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Thin film magnetoresistive sensors. Bristol: Institute of Physics Pub., 2001.

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L, Vossen John, i Kern Werner 1925-, red. Thin film processes II. Boston: Academic Press, 1991.

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1953-, Fujimori A., Tokura Y. 1954- i Taniguchi International Symposium on the Theory of Condensed Matter (17th : 1994 : Kashikojima, Japan), red. Spectroscopy of mott insulators and correlated metals: Proceedings of the 17th Taniguchi Symposium, Kashikojima, Japan, October 24-28, 1994. Berlin: Springer, 1995.

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Hopkins, Vern. Development of solid film lubricants for use in space environments. [Washington, DC]: NASA Center for AeroSpace Information, 2000.

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Wasa, Kiyotaka. Thin film materials technology: Sputtering of compound materials. Norwich, N.Y: William Andrew Pub., 2004.

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Esfahani, Nastaran Ghazi. Investigation of Plastic Strain Recovery and Creep in Thin Film Nanocrystalline Metals. [New York, N.Y.?]: [publisher not identified], 2014.

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Symposium on Thin Film Solid Ionic Devices and Materials (1995 Chicago, Ill.). Proceedings of the Symposium on Thin Film Solid Ionic Devices and Materials. Pennington, NJ: Electrochemical Society, 1996.

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J, Mazumder, North Atlantic Treaty Organization. Scientific Affairs Division. i NATO Advanced Study Institute on "Laser Processing: Surface Treatment and Film Deposition" (1994 : Sezimbra, Portugal), red. Laser processing: Surface treatment and film deposition. Dordrecht: Kluwer Academic Publishers, 1996.

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Gu ti bo mo cai liao yu zhi bei ji shu: Thin solid film materials and preparation technology. Beijing: Ke xue chu ban she, 2008.

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Części książek na temat "Solid thin film metals"

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Wybourne, M. N., i J. C. Nabity. "The Phonon Dimensionality in a Thin Metal Film". W Springer Series in Solid-State Sciences, 457–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84888-9_177.

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Yoo, Yeong, Naoki Oishi, Daniel Roth i Suwas Nikumb. "Development of Metal Supported Thin Film SOFCs at ICPET/NRCC". W Advances in Solid Oxide Fuel Cells III, 15–24. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2009. http://dx.doi.org/10.1002/9780470339534.ch2.

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Müller, G. O. "Thin film electroluminescence". W Solid State Luminescence, 133–57. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_5.

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Mach, R. "Thin film electroluminescence devices". W Solid State Luminescence, 229–62. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_7.

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Weppner, Werner. "Thin Film Solid State Ionic Gas Sensors". W Solid State Microbatteries, 395–405. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-2263-2_24.

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Van Haesendonck, C., M. Gijs i Y. Bruynseraede. "Electron Scattering Times in Thin Metal Films Experimental Results". W Springer Series in Solid-State Sciences, 221–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82516-3_22.

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Julien, C., i M. Balkanski. "Technology and Physics of Thin Film Insertion Compounds". W Solid State Microbatteries, 233–67. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-2263-2_12.

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Cha, Young Chul, Chul Eui Kim, Seung Hun Lee, Hae Jin Hwang, Ji Woong Moon, In Sub Han i Sang Kuk Woo. "Synthesis of Silica Aerogel Thin Film from Waterglass". W Solid State Phenomena, 671–74. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.671.

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Bannehr, R., i J. P. Wiaux. "Thin film cathode material in Li-I2 primary battery". W Solid State Batteries, 519–21. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5167-9_43.

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Sang, Sheng Bo, Cheng Yang Xue, Wen Dong Zhang i Bin Zheng Zhang. "Raman Quantitate Stress in Nano-Thin Film of MEMS". W Solid State Phenomena, 943–46. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.943.

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Streszczenia konferencji na temat "Solid thin film metals"

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Sarkar, Suman, i Sarathi Kundu. "Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film". W DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5028904.

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Kedawat, Garima, Vipin Kumar Jain i Y. K. Vijay. "Fabrication of metal dielectric metal multilayer thin film: Color filter". W SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4872840.

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Kafle, B. P., I. Rubinstein i E. A. Katz. "Model of Electrodiffusion of Metals in Fullerene Thin Films". W 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.p13-12l.

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Pelgrims, Jonas, Kris Myny i Wim Dehaene. "A 24V Thin-Film Ultrasonic Driver for Haptic Feedback in Metal-Oxide Thin-Film Technology using Hybrid DLL Locking Architecture". W ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC). IEEE, 2022. http://dx.doi.org/10.1109/esscirc55480.2022.9911408.

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Hoi Sing Kwok, Man Wong, Shuyun Zhao i Zhiguo Meng. "Metal induced continuous grain polycrystalline silicon thin film transistors". W 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734705.

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DU, GUOTONG, XINQIANG WANG, SHUREN YANG, XIAOTIAN YANG, JINZHONG WANG, YUANTAO ZHANG, DAN LIU, YAN MA, DALI LIU i H. C. ONG. "ZnO THIN FILM GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION". W Proceedings of the International Symposium on Solid State Chemistry in China. WORLD SCIENTIFIC, 2002. http://dx.doi.org/10.1142/9789812776846_0052.

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Kawabata, K., i T. Nakayama. "Metal-Atom Penetration and Clustering Processes in PTCDA Thin Films; First-Principles Study of Film Degradation". W 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-10-15-21.

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Zhou, Zheng, Feng Zhuang, Na Li i Wanling Deng. "Simulation of High-Gain Amplifier with Metal Oxide Thin-Film Transistors". W 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). IEEE, 2018. http://dx.doi.org/10.1109/edssc.2018.8487172.

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Tah, Twisha, Ch Kishan Singh, K. K. Madapu, S. R. Polaki, S. Ilango, C. David, S. Dash i B. K. Panigrahi. "Formation of nanocrystalline SiGe in Polycrystalline-Ge/Si thin film without any metal induced crystallization". W DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980475.

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Adalati, Ravikant, Ashwani Kumar, Gaurav Malik i Ramesh Chandra. "Transition metal nitride nanoflake thin film grown by DC-magnetron sputtering for high-performance supercapacitor applications". W DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0016764.

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Raporty organizacyjne na temat "Solid thin film metals"

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Dr. Harlan U. Anderson. Microporous and Thin Film Membranes for Solid Oxide Fuel. Office of Scientific and Technical Information (OSTI), luty 2007. http://dx.doi.org/10.2172/908515.

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Nguyen Minh i Kurt Montgomery. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), październik 2004. http://dx.doi.org/10.2172/835848.

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Jie Guan i Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), październik 2003. http://dx.doi.org/10.2172/822898.

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Jie Guan i Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), grudzień 2003. http://dx.doi.org/10.2172/822899.

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Jie Guan, Atul Verma i Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), kwiecień 2003. http://dx.doi.org/10.2172/822139.

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Lee, You-Kee, Jung-Yeul Kim, Young-Ki Lee, Insoo Kim, Hee-Soo Moon, Jong-Wan Park, Craig P. Jacobson i Steven J. Visco. Conditioning effects on La1-xSrxMnO3-Yttria stabilized Zirconia electrodes for thin-film solid oxide fuel cells. Office of Scientific and Technical Information (OSTI), grudzień 2002. http://dx.doi.org/10.2172/810538.

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Garofalini, Stephen. Solid Electrolyte/Electrode Interfaces: Atomistic Behavior Analyzed Via UHV-AFM, Surface Spectroscopies, and Computer Simulations Computational and Experimental Studies of the Cathode/Electrolyte Interface in Oxide Thin Film Batteries. Office of Scientific and Technical Information (OSTI), marzec 2012. http://dx.doi.org/10.2172/1036745.

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Jones. L51751 Evaluation of Low Hydrogen Welding Processes for Pipeline Construction in High Strength Steel. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), sierpień 1996. http://dx.doi.org/10.55274/r0010220.

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Streszczenie:
As the use of higher strength and thicker walled pipe becomes more prevalent, the procedures that would normally guard against hydrogen cracking when welding with cellulosic electrodes, become less effective and it has become necessary to investigate the use of alternative low hydrogen consumables. Low hydrogen manual welding processes, suitable for pipeline girth welding, have been available for some time for the lower strength pipe grades, and latterly, for high strength pipelines (up to and including X80). Despite their availability and advantages in terms of reduced crack susceptibility, they have been rarely used in production up to the present time. Basic coated shielded metal arc (SMA) electrodes, suitable for vertical-down welding, are produced by some manufacturers at the strength level required for both the root welding and filling of pipeline girth welds. Self-shielded flux-cored wires (SSFCA) are also available for both root and fill welding, and in addition to the low hydrogen levels, these have the advantage of increased productivity. Both of these processes require different methods of deposition compared to welding using cellulosic electrodes, which necessitates specialized training of welders. It is thought that this, along with doubts concerning the reliability and speed of the processes in site conditions, has made contractors reluctant to adopt them. Furthermore, there was a dearth of independently produced information on the welding production performance of low hydrogen processes. The objectives of this work was to generate data to enable users to make an informed judgement regarding the practical application of low hydrogen processes. Furthermore, it was intended to develop improved root welding procedures, which had been recognized as being significant process limitation. A further objective of this work was to collect data to permit an informed choice when choosing low hydrogen welding processes for modern high-strength steel walled pipe. The performance of low hydrogen vertical down electrodes (L4VD) and solid and flux cored wires for welding X80 linepipe is assessed with regard to ease of welding, productivity and weldment mechanical properties in comparison to cellulosic electrodes.
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Kidder, J. A., M. B. McClenaghan, M I Leybourne, M. W. McCurdy, P. Pelchat, D. Layton-Matthews, C. E. Beckett-Brown i A. Voinot. Geochemical data for stream and groundwaters around the Casino Cu-Au-Mo porphyry deposit, Yukon (NTS 115 J/10 and 115 J/15). Natural Resources Canada/CMSS/Information Management, 2022. http://dx.doi.org/10.4095/328862.

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This open file reports geochemical data for stream and groundwater samples collected around the Casino porphyry Cu-Au-Mo deposit, one of the largest and highest-grade deposits of its kind in Canada. The calc-alkaline porphyry is hosted in a Late Cretaceous quartz monzonite and associated breccias in the unglaciated region of west central Yukon. Water chemistry around the deposit was investigated because: (i) the deposit has not yet been disturbed by mining; (ii) the deposit was known to have metal-rich waters in local streams; and (iii) the deposit has atypically preserved ore zones. Stream water samples were collected at 22 sites and groundwater samples were collected from eight sites. Surface and groundwaters around the Casino deposit are anomalous with respect to Cd (up to 5.4 µg/L), Co (up to 64 µg/L), Cu (up to 1657 µg/L), Mo (up to 25 µg/L), As (up to 17 µg/L), Re (up to 0.7 µg/L), and Zn (up to 354 µg/L) concentrations. The stable isotopes of O and H of the groundwaters are essentially identical to the surface waters and plot close to the local and global meteoric water lines, indicating that the waters represent modern recharge, consistent with the generally low salinities of all the waters (total dissolved solids range from 98 to 1320 mg/L). Sulfur and Sr isotopes are consistent with proximal waters interacting with the Casino rocks and mineralization; a sulfide-rich bedrock sample from the deposit has delta-34S = -1.2 permille and proximal groundwaters are only slightly heavier (-0.3 to 3.1 permille). These geochemical and isotopic results indicate that surface water geochemistry is a suitable medium for mineral exploration for porphyry-style mineralization in the Yukon, and similar unglaciated regions in Canada. The atypical geochemical signature (Mo, Se, Re, As, Cu) of these types of deposits are typically reflected in the water chemistry and S isotopes provide a more local vectoring tool.
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