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Data publikacji: 5 października 2024

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1

Lum, Nancy Susan. Protein adsorption of human serum albumin at solid/liquid interfaces as monitored by electron spin resonance spectroscopy. Ottawa: National Library of Canada, 1994.

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2

Abad, Enrique. Energy Level Alignment and Electron Transport Through Metal/Organic Contacts: From Interfaces to Molecular Electronics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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3

G, Compton R., i Hamnett A, red. New techniques for the study of electrodes and their reactions. Amsterdam: Elsevier, 1989.

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4

Kharton, Vladislav V. Solid State Electrochemistry II: Electrodes, Interfaces and Ceramic Membranes. Wiley & Sons, Incorporated, John, 2012.

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5

Kharton, Vladislav V. Solid State Electrochemistry II: Electrodes, Interfaces and Ceramic Membranes. Wiley & Sons, Incorporated, John, 2011.

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6

Kharton, Vladislav V. Solid State Electrochemistry II: Electrodes, Interfaces and Ceramic Membranes. Wiley & Sons, Limited, John, 2011.

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7

Kharton, Vladislav V. Solid State Electrochemistry II: Electrodes, Interfaces and Ceramic Membranes. Wiley & Sons, Incorporated, John, 2011.

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8

Polarized Electrons at Surfaces. Springer, 2013.

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9

Kirschner, J. Polarized Electrons at Surfaces. Springer, 2008.

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10

Polarized electrons at surfaces. Berlin: Springer-Verlag, 1985.

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11

Fultz, Brent. Transmission Electron Microscopy and Diffractometry of Materials. 2002.

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12

Coppens, Philip. X-Ray Charge Densities and Chemical Bonding. Oxford University Press, 1997. http://dx.doi.org/10.1093/oso/9780195098235.001.0001.

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This book deals with the electron density distribution in molecules and solids as obtained experimentally by X-ray diffraction. It is a comprehensive treatment of the methods involved, and the interpretation of the experimental results in terms of chemical bonding and intermolecular interactions. Inorganic and organic solids, as well as metals, are covered in the chapters dealing with specific systems. As a whole, this monograph is especially appealing because of its broad interface with numerous disciplines. Accurate X-ray diffraction intensities contain fundamental information on the charge distribution in crystals, which can be compared directly with theoretical results, and used to derive other physical properties, such as electrostatic moments, the electrostatic potential and lattice energies, which are accessible by spectroscopic and thermodynamic measurements. Consequently, the work will be of great interest to a broad range of crystallographers and physical scientists.

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13

Nitzan, Abraham. Chemical Dynamics in Condensed Phases. Oxford University PressOxford, 2024. http://dx.doi.org/10.1093/9780191947971.001.0001.

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Abstract This second edition builds on the first, providing a uniform approach to diverse problems encountered in the study of dynamical processes in condensed-phase molecular systems. It focuses on three themes: coverage of needed background material, in-depth introduction of methodologies, and analysis of several key applications to processes of importance in physical, chemical and biological phenomena in complex systems. Chapter 1 starts with a general review of basic mathematical and physical methods. It is followed by a few introductory chapters on quantum dynamics (Chapter 2), radiation–matter interaction (Chapter 3) and introduction to solids (Chapter 4) and liquids (Chapter 5). Chapters 6–12 provide a broad coverage of the main methodological approaches: time-correlation functions (Chapter 6), stochastic processes (Chapters 7 and 8), quantum relaxation phenomena (Chapters 9 and 10), linear response theory (Chapter 11) and various forms of the spin–boson model for describing molecular interaction with the radiation field and the thermal environment (Chapter 12). Chapters 13–19 describe some key applications: Vibrational relaxation and vibrational energy transfer (Chapter 13), Barrier crossing and diffusion-controlled reactions (Chapter 14), solvation dynamics (Chapter 15), electron transfer in bulk solvents (Chapter 16) and at electrodes/electrolyte and metal/molecule/metal junctions (Chapter 17), and several processes pertaining to molecular spectroscopy in condensed phases (Chapter 18) and at dielectric interfaces (new Chapter 19).

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14

Bauer, Ernst. Surface Microscopy with Low Energy Electrons. Springer, 2016.

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15

Bauer, Ernst. Surface Microscopy with Low Energy Electrons. Springer London, Limited, 2014.

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16

Surface Microscopy with Low Energy Electrons. Springer, 2014.

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17

Abad, Enrique. Energy Level Alignment and Electron Transport Through Metal/Organic Contacts: From Interfaces to Molecular Electronics. Springer Berlin / Heidelberg, 2014.

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18

(Editor), H. P. Winter, i J. Burgdörfer (Editor), red. Slow Heavy-Particle Induced Electron Emission from Solid Surfaces (Springer Tracts in Modern Physics). Springer, 2007.

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19

Tiwari, Sandip. Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.001.0001.

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A graduate-level text, Semiconductor physics: Principles, theory and nanoscale covers the central topics of the field, together with advanced topics related to the nanoscale and to quantum confinement, and integrates the understanding of important attributes that go beyond the conventional solid-state and statistical expositions. Topics include the behavior of electrons, phonons and photons; the energy and entropic foundations; bandstructures and their calculation; the behavior at surfaces and interfaces, including those of heterostructures and their heterojunctions; deep and shallow point perturbations; scattering and transport, including mesoscale behavior, using the evolution and dynamics of classical and quantum ensembles from a probabilistic viewpoint; energy transformations; light-matter interactions; the role of causality; the connections between the quantum and the macroscale that lead to linear responses and Onsager relationships; fluctuations and their connections to dissipation, noise and other attributes; stress and strain effects in semiconductors; properties of high permittivity dielectrics; and remote interaction processes. The final chapter discusses the special consequences of the principles to the variety of properties (consequences of selection rules, for example) under quantum-confined conditions and in monolayer semiconductor systems. The text also bring together short appendices discussing transform theorems integral to this study, the nature of random processes, oscillator strength, A and B coefficients and other topics important for understanding semiconductor behavior. The text brings the study of semiconductor physics to the same level as that of the advanced texts of solid state by focusing exclusively on the equilibrium and off-equilibrium behaviors important in semiconductors.

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20

Tiwari, Sandip. Nanoscale Device Physics. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198759874.001.0001.

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Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the inter-actions, and others. These interactions, with the limits placed on size, make not just electronic, but also magnetic, optical and mechanical behavior interesting, important and useful. Connecting these properties to the behavior of devices is the focus of this textbook. Description of the book series: This collection of four textbooks in the Electroscience series span the undergraduate-to-graduate education in electrosciences for engineering and science students. It culminates in a comprehensive under-standing of nanoscale devices—electronic, magnetic, mechanical and optical in the 4th volume, and builds to it through volumes devoted to underlying semiconductor and solid-state physics with an emphasis on phenomena at surfaces and interfaces, energy interaction, and fluctuations; a volume devoted to the understanding of the variety of devices through classical microelectronic approach, and an engineering-focused understanding of principles of quantum, statistical and information mechanics. The goal is provide, with rigor and comprehensiveness, an exposure to the breadth of knowledge and interconnections therein in this subject area that derives equally from sciences and engineering. By completing this through four integrated texts, it circumvents what is taught ad hoc and incompletely in a larger number of courses, or not taught at all. A four course set makes it possible for the teaching curriculum to be more comprehensive in this and related advancing areas of technology. It ends at a very modern point, where researchers in the subject area would also find the discussion and details an important reference source.

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