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Artykuły w czasopismach na temat "SOI"
Hudhomme, Solveig. "Une trilogie de soi à soi, soi-disant". Roman 20-50 60, nr 2 (2015): 45. http://dx.doi.org/10.3917/r2050.060.0045.
Pełny tekst źródłaZielinski, Agata. "Être chez soi, être soi". Études juin, nr 6 (21.05.2015): 55–65. http://dx.doi.org/10.3917/etu.4217.0055.
Pełny tekst źródłaRévah-Levy, Anne, i Quitterie De La Noë. "Parler de soi, penser à soi". L'Autre 1, nr 2 (2000): 215. http://dx.doi.org/10.3917/lautr.002.0215.
Pełny tekst źródłaSaitô, Takako. "Le soi et le non-soi". Revue philosophique de la France et de l'étranger 142, nr 1 (2017): 3. http://dx.doi.org/10.3917/rphi.171.0003.
Pełny tekst źródłaCousin, Bruno. "Entre-soi mais chacun chez soi". Actes de la recherche en sciences sociales 204, nr 4 (2014): 88. http://dx.doi.org/10.3917/arss.204.0088.
Pełny tekst źródłaSonnenberg, Victor, i João Antonio Martino. "SOI technology characterization using SOI-MOS capacitor". Solid-State Electronics 49, nr 1 (styczeń 2005): 109–16. http://dx.doi.org/10.1016/j.sse.2004.06.010.
Pełny tekst źródłaMinjard, Raphaël. "Coma : une absence de soi à soi ?" Cliniques méditerranéennes 89, nr 1 (2014): 121. http://dx.doi.org/10.3917/cm.089.0121.
Pełny tekst źródłaPeraldi, Jacques. "Outre soi". Po&sie 143, nr 1 (2013): 91. http://dx.doi.org/10.3917/poesi.143.0091.
Pełny tekst źródłaIshida, Makoto, Yoshinori Matsumoto i Hidekuni Takao. "SOI Sensors". Sensors Update 6, nr 1 (listopad 1999): 301–31. http://dx.doi.org/10.1002/1616-8984(199911)6:1<301::aid-seup301>3.0.co;2-q.
Pełny tekst źródłaSyan, Silina, i Sophie Orlando. "Chez Soi". Hommes & migrations, nr 1342 (1.07.2023): 52–59. http://dx.doi.org/10.4000/hommesmigrations.15670.
Pełny tekst źródłaRozprawy doktorskie na temat "SOI"
Quérini, Nicolas. "De la connaissance de soi au devenir soi : Platon-Nietzsche". Thesis, Strasbourg, 2020. http://www.theses.fr/2020STRAC019.
Pełny tekst źródłaWhile criticizing the Western morality anchored, according to him, in the Delphic sentence “Know yourself”, Nietzsche develops for his part an imperative which is, in our opinion, the natural and necessary extension of the self-knowledge. It is, therefore, from the injunction to become oneself that he operates the criticism of morality itself resulting from the invitation to self-knowledge. It is not, however, a question of reducing the Nietzsche an ethics of becoming-self to the way in which one can understand this syntagm in Plato. The use that Nietzsche proposes of it is indeed, in our opinion, quite singular. It cannot be denied, however, that it also did not come out of nothing and that Nietzsche first draws lessons from Pindar, who reinterprets himself the Delphic sentence, when he writes “Becomeas you have learned to know youself”. We therefore think that Nietzsche recovers Pindar’s formula beyond Plato, to criticize the latter and, through him, the whole philosophy which made self knowledge the departure of ethics. But we would therefore also try to do justice to Plato, since his philosophy actually frees the possibility of becoming ourself
Tuduri, Suzy. "EPSA : Espace Projectif du Soi Archaïque : l’univers, miroir de soi". Thesis, Lyon 2, 2014. http://www.theses.fr/2014LYO20086.
Pełny tekst źródłaThis thesis traces the steps of creating a projective device for exploring the self-archaic of an adult subject. Its development is the result of several former studies from various groups: adult subjects with no pathology recognized, young psychotic adults and/or borderlines, and adult paraplegic subjects. The device created for this research has evolved into an exploration and mediation tool used for many years as part of my therapeutic group of patients, mostly suffering from identity narcissistic disorders.Photographs of space, mostly taken by the CNRS or NASA with different telescopes, are used a carrier. With these photographs, the visual impact is undeniable. "What does the Universe mean to you?": The use of photographs of various celestial objects as projective medium to respond to a latent question about subjectivity, mobilizes thinking in images and comes to question the sense of self, archaic and current. The photographs offer a representation of native experiences, cosmic metaphors already presented in the psychoanalytic literature (Anzieu and formal signifiers, Aulagnier and the black hole of the psyche... These favor an imaged scene of early interactions.The EPSA device is an "attractor" seeking the projection of an "uncreated" image, an experience in default of symbolization. The EPSA malleability allows the patient to put into shape the uncreated, to tell the story of what he does not know of himself and that haunts him. The subject projects into the EPSA a psychic atmosphere, a trace of an emerging self with an operation that is sometimes problematic, in which appears "processes" of transformation.EPSA explores the reflexive capacities of the subject: the subject ability to be able to develop or not an aesthetic conflict, management and expression of conflict. It is also explores the ability to "reason" emotionally, to be in touch with his emotions, to experience them, to feel oneself, to see oneself, and "to express" his emotions (Three "degrees" of symbolization).The maturity of the archaic self and its expression (emotional maturity of the sense of self) can be defined as the tolerance and acceptance of affects, emotions, and feelings... caused by conflicts to think about oneself. In this way, the subject avoids being "overwhelmed" emotionally and inhibition. The mental and verbal elaboration of conflicts provides for sharing and communication with others.EPSA allows us to observe in adults the relationship in the early stages of development disorders: treatment of affect, early interactions, and disorders due to deficiencies in the tuning... EPSA is an exploration of an important tool in the construction of subjectivity processes, and refines our clinical look on narcissistic identity disorders, borderline condition, and disease of addiction...The EPSA device, which proposes the patient to imagine his impressions, enables the patient to put words to his thoughts. It is a creative space in which we found and create. A symbolizing device which encourages sharing and meeting. It is an "objeu", a therapeutic carrier. Finally, EPSA is a mirror of oneself, and also a tool of "transformation" of symbolization
Ménard, Dominique. "Ecriture de soi, construction de soi : l'écriture et sa relation à l'inconscient". Paris 7, 2014. http://www.theses.fr/2014PA070019.
Pełny tekst źródłaLiterature and psychoanalysis hold together links so inevitable as enigmatic writers. Freud was the first to show and illustrate how the writing process could make understand the psychoanalytic facts and their mechanisms He learned a lot from artistic practices, particularly in literature; and after him, the use of literature allowed the identification of issues in the clinical field, which were likely to be then transferred to the medical practice. From their side, the writers have taken the psychoanalytic concepts and approaches to enrich and feed their perpetual quest for an always-greater self-knowledge. Most have even used writing as a weapon against death. It seemed interesting to us to test some artworks in terms of analytical thinking. Therefore the following essay asks the question on what motivates an individual to get involved in writing, where does the desire, often a matter of survival, come from, and how does he proceed to achieve that. If writing can occasionally organize the analytic discourse, it is undeniable that it has profoundly affected the artistic codes, and in particular in the field of literature. Writing process, through mobilization of unconscious processes and resonances it leaves, enables, by way of its own, to go to the sources of the unconscious. It is in the development of new forms of interest that the studied writers were able to shape, identify which of their identity aspects was lacking in their own understanding of reality
Martin, Brice. "Temps, soi et schizophrénie". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSE1256/document.
Pełny tekst źródłaTime disorders in schizophrenia have been the subject of numerous clinical descriptions, particularly from the psychiatric phenomenology. The latter considers time more as a container than a content of perception that is to say an essential component of subjective experience: consciousness is indeed structured in time. Husserl describes a tripartite structure of time consciousness, which is seen as an automatic integration of the past, the present, and the future. He gives the example of music. When we listen to a melody, we are conscious of the present note but still have the previous note in mind (“retention”) and usually anticipate the note to come. These automatic processes determine in this model the subject's ability to forge a sense of familiarity with his own experience, lived as stable and continuous.One of phenomenological models of schizophrenic disorders postulated a breakdown of the temporal structure of consciousness, which consequently induces disturbances of subjective experience at its most basic level (the level of minimal self) and determines a subject lived strangeness to respect of his own experience. These descriptive approaches, however, are limited by the extent that it is difficult to describe temporality of others by introspective method. Thus, exploring process of temporality by cognitive sciences could help to overcome these limitations. Recent work focusing on the alteration of simultaneity judgments (which does not seem to sign a merger events to an implicit and automatic level) and basic temporal predictive processes (however measured at the scale of a millisecond) in schizophrenic disorders and the links it is possible to foresee with predictive coding theory provides a very encouraging first set of data on the way to a cognitive understanding of schizophrenic time. The objective of our work was to validate the one hand the hypothesis of dissociation between conscious and automatic discrimination of events in time, using paradigms assessing the temporal constraints of multisensory integration (Study 1). On the other hand, we studied directly implicit time prediction with a dedicated paradigm (in this case, the temporal orientation task, Study 2). We also analyzed the automatic responses of subjects in an event discrimination task in time to check what patients can and can not predict (Study 3). We also explore the hypothesis of a link between temporal and minimal self by looking for correlations between performance
Lamia, Alicia. "Représentations de soi, position scolaire et estime de soi des enfants d'âge scolaire". Toulouse 2, 1999. http://www.theses.fr/1999TOU20112.
Pełny tekst źródłaTwo research studies are described in this thesis. The first was concerned with the self-image and the self-esteem school age children. The second examined the influence of the teacher's representation of a "good pupil" on his/her evaluation of different areas of competence in the child. The population of this research is composed of 180 children for the first study. For the second one there are 134 children and 9 teachers from an elementary school in Toulouse. We used the Perceived competence scale of children (PCSC), a structured interview, and a thematic composition with children to evaluate self-image and self-esteem. The children's scholastic achievement was determined by an unstructured interview. Teachers evaluated children's competence with a questionnaire. The results show that boys evaluate themselves more positively than girls and most particularly with regard to cognitive and physical competence. This pattern was true as much for the younger children as by the older. The responses of the children in defining their self-image also varied according to age and sex. Teachers showed a tendency to evaluate the competencies of the boys more positively. This evaluation was particularly marked with scholastic competence. Finally, our results showed that, in general, teachers are more positive about to the children of opposite sex. Masters are more negative than mistresses in their evaluation of the pupils. The results indicate that teacher evaluation plays an important part in determining the child's perception of him/herself. It is also possible that the child's level of self-esteem influences the manner of which they are perceived by teachers. This last question remains open
ROCCA, ANNA. "Reconnaissance du soi et du soi modifie par les cellules b et t". Paris 7, 1989. http://www.theses.fr/1989PA077107.
Pełny tekst źródłaCiressan, Nicoleta-Diana. "Nanogap MEM resonators on SOI /". [S.l.] : [s.n.], 2009. http://library.epfl.ch/theses/?nr=4484.
Pełny tekst źródłaAïssaoui, Driss. "Robert Challe écrivain de soi". Thesis, University of Ottawa (Canada), 1999. http://hdl.handle.net/10393/8936.
Pełny tekst źródłaAissaoui, Driss. "Robert Challe ecrivain de soi". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0018/NQ45258.pdf.
Pełny tekst źródłaHaneef, Ibraheem. "SOI CMOS MEMS flow sensors". Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611843.
Pełny tekst źródłaKsiążki na temat "SOI"
Caroline, Messinger, red. Les gestes de la confiance en soi: Maîtrise de soi, estime de soi, confiance en soi. Paris: First éd., 2011.
Znajdź pełny tekst źródłaOmura, Yasuhisa, red. Soi Lubistors. Solaris South Tower, Singapore: John Wiley & Sons Singapore Pte. Ltd., 2013. http://dx.doi.org/10.1002/9781118487914.
Pełny tekst źródłaNguyên, Trà̂n Tùng. Soi lòng. Orlando, FL: Hưng Đạo, 1991.
Znajdź pełny tekst źródłaD, Carosella Edgardo, i Fondation Simone et Cino Del Duca., red. L'identité: Soi et non-soi, individu et personne. Paris: Presses universitaires de France, 2006.
Znajdź pełny tekst źródłaL'Ecuyer-Sabino, France. Le perfectionnement de soi. Montréal, Qué: Agence d'ARC, 1991.
Znajdź pełny tekst źródłaOser être soi-même. Alleur, Belgique: Marabout, 2009.
Znajdź pełny tekst źródłaPasini, Willy. Être sûr de soi. Paris: Odile Jacob poches, 2004.
Znajdź pełny tekst źródłaRetour contre soi. Paris: Le Dilettante, 1987.
Znajdź pełny tekst źródłaPolac, Michel. Hors de soi. [Paris]: B. Barrault, 1985.
Znajdź pełny tekst źródłaDuchêne, Charles. Chacun pour soi--. Paris: BTF concept, 2008.
Znajdź pełny tekst źródłaCzęści książek na temat "SOI"
Colinge, Jean-Pierre. "SOI Materials". W Silicon-on-Insulator Technology, 7–54. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2121-8_2.
Pełny tekst źródłaColinge, Jean-Pierre. "SOI Circuits". W Silicon-on-Insulator Technology, 191–202. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2121-8_8.
Pełny tekst źródłaColinge, Jean-Pierre. "SOI Materials". W Silicon-on-Insulator Technology: Materials to VLSI, 7–65. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4757-2611-4_2.
Pełny tekst źródłaColinge, Jean-Pierre. "SOI Circuits". W Silicon-on-Insulator Technology: Materials to VLSI, 241–67. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4757-2611-4_8.
Pełny tekst źródłaBalestra, Francis, i Gérard Ghibaudo. "SOI MOSFETs". W Device and Circuit Cryogenic Operation for Low Temperature Electronics, 37–67. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_3.
Pełny tekst źródłaCristoloveanu, Sorin, i Sheng S. Li. "SOI Devices". W Electrical Characterization of Silicon-on-Insulator Materials and Devices, 45–86. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2245-4_3.
Pełny tekst źródłaKhanna, Vinod Kumar. "SOI-MOSFETs". W NanoScience and Technology, 95–107. New Delhi: Springer India, 2016. http://dx.doi.org/10.1007/978-81-322-3625-2_6.
Pełny tekst źródłaColinge, Jean-Pierre. "Soi Materials". W Silicon-on-Insulator Technology: Materials to VLSI, 9–68. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4419-9106-5_2.
Pełny tekst źródłaColinge, Jean-Pierre. "SOI Circuits". W Silicon-on-Insulator Technology: Materials to VLSI, 327–60. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4419-9106-5_8.
Pełny tekst źródłaFlandre, Denis. "Soi Technology". W Smart Adaptive Systems on Silicon, 49–64. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4020-2782-6_4.
Pełny tekst źródłaStreszczenia konferencji na temat "SOI"
Skotnicki, Thomas. "Competitive SOC with UTBB SOI". W 2011 IEEE International SOI Conference. IEEE, 2011. http://dx.doi.org/10.1109/soi.2011.6081792.
Pełny tekst źródłaInoue, Y. "SOI technology for future SoC". W Extended Abstracts of the Third International Workshop on Junction Technology. IWJT. IEEE, 2002. http://dx.doi.org/10.1109/iwjt.2002.1225217.
Pełny tekst źródła"1988 IEEE SOS/SOI Technology Workshop. Proceedings (IEEE Cat. No.88CH2698-9)". W Proceedings. SOS/SOI Technology Workshop. IEEE, 1988. http://dx.doi.org/10.1109/soi.1988.95455.
Pełny tekst źródła"1989 IEEE SOS/SOI Technology Conference (Cat. No.89CH2796-1)". W IEEE SOS/SOI Technology Conference. IEEE, 1989. http://dx.doi.org/10.1109/soi.1989.69741.
Pełny tekst źródła"SOI Memories". W 2006 IEEE international SOI Conferencee Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/soi.2006.284454.
Pełny tekst źródłaFazan, Pierre, i Stephen Parke. "SOI Memories". W 2006 IEEE international SOI. IEEE, 2006. http://dx.doi.org/10.1109/soi.2006.284453.
Pełny tekst źródła"1990 IEEE SOS/SOI Technology Conference. (Cat. No.90CH2891-0)". W 1990 IEEE SOS/SOI Technology Conference. Proceedings. IEEE, 1990. http://dx.doi.org/10.1109/sossoi.1990.145771.
Pełny tekst źródłaAssaderaghi, Fari. "SOI and Engineered-SOI, ideal platforms for building MEMS". W 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Formerly known as SOI Conference). IEEE, 2013. http://dx.doi.org/10.1109/s3s.2013.6716582.
Pełny tekst źródłaSuryagandh, Garg i Woo. "A detailed analysis of SOI MOSFETs for SOC design". W 2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03). IEEE, 2003. http://dx.doi.org/10.1109/soi.2003.1242931.
Pełny tekst źródłaKennard, M. "Strained SOI/GOI". W 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246516.
Pełny tekst źródłaRaporty organizacyjne na temat "SOI"
SCHAFER (W J) ASSOCIATES INC ALBUQUERQUE NM. Space Object Identification (SOI). Fort Belvoir, VA: Defense Technical Information Center, luty 1999. http://dx.doi.org/10.21236/ada361614.
Pełny tekst źródłaSurya, Charles. Leakage Current Measurements in SOI Devices. Fort Belvoir, VA: Defense Technical Information Center, grudzień 1991. http://dx.doi.org/10.21236/ada247694.
Pełny tekst źródłaZhou, Sida. Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.6830.
Pełny tekst źródłaIoannou, Dimitris E. DLTS and Dynamic Transconductance Analysis of Deep-Submicron Fully- Depleted SOI MOSFET's. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 1993. http://dx.doi.org/10.21236/ada267291.
Pełny tekst źródłaSanders, Thomas J. Statistical Modeling of SOI Devices for the Low Power Electronics Program. Phase 1. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1995. http://dx.doi.org/10.21236/ada299702.
Pełny tekst źródłaMarshall, Janet C., i Mona E. Zaghloul. Design and testing guides for the CMOS and lateral bipolar-on-SOI test library. Gaithersburg, MD: National Institute of Standards and Technology, 1994. http://dx.doi.org/10.6028/nist.sp.400-93.
Pełny tekst źródłaLagally, Max. Quantum Dots on Silicon-on-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering. Office of Scientific and Technical Information (OSTI), wrzesień 2023. http://dx.doi.org/10.2172/2004654.
Pełny tekst źródłaHudson, Tracy D., i Michael S. Kranz. Operation of Silicon-on-Insulator (SOI) Micro-ElectroMechanical Systems (MEMS) Gyroscopic Sensor as a Two-Axis Accelerometer. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2012. http://dx.doi.org/10.21236/ada559286.
Pełny tekst źródłaPtasinski, Joanna. Electrode Placement for Active Tuning of Silicon-on-Insulator (SOI) Ring Resonator Structure Clad in Nematic Liquid Crystals. Fort Belvoir, VA: Defense Technical Information Center, sierpień 2014. http://dx.doi.org/10.21236/ada611752.
Pełny tekst źródłaXu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Fort Belvoir, VA: Defense Technical Information Center, styczeń 2014. http://dx.doi.org/10.21236/ada596171.
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