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Artykuły w czasopismach na temat "SOA integrated optics Quantum wells"
Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon i in. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers". Applied Sciences 11, nr 23 (23.11.2021): 11096. http://dx.doi.org/10.3390/app112311096.
Pełny tekst źródłaXiao, Feng, Qin Han, Han Ye, Shuai Wang i Fan Xiao. "InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier". Japanese Journal of Applied Physics 61, nr 1 (1.01.2022): 012005. http://dx.doi.org/10.35848/1347-4065/ac38fb.
Pełny tekst źródłaLi Kam Wa, P. "Intermixing of multiple quantum wells for all-optical integrated circuits". Optical and Quantum Electronics 23, nr 7 (styczeń 1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.
Pełny tekst źródłaKowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, Christopher D. Pynn, Robert M. Farrell, James S. Speck, Steven P. DenBaars i Shuji Nakamura. "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells". Optics Express 25, nr 4 (13.02.2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.
Pełny tekst źródłaLu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, Chieh-Hsiung Kuan, Juei-Yang Feng, Tsong-Sheng Lay, Chen-Wei Yang i Shun-Li Tu. "A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance". IEEE Journal of Quantum Electronics 43, nr 1 (styczeń 2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.
Pełny tekst źródłaFeng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama i Hiroshi Ishikawa. "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch". Optics Express 21, nr 13 (25.06.2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.
Pełny tekst źródłaНовиков, И. И., И. А. Няпшаев, А. Г. Гладышев, В. В. Андрюшкин, А. В. Бабичев, Л. Я. Карачинский, Ю. М. Шерняков i in. "Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм". Физика и техника полупроводников 56, nr 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.
Pełny tekst źródłaZhang, Yi, Jianfeng Gao, Senbiao Qin, Ming Cheng, Kang Wang, Li Kai i Junqiang Sun. "Asymmetric Ge/SiGe coupled quantum well modulators". Nanophotonics 10, nr 6 (19.03.2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.
Pełny tekst źródłaХабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев, Р. Р. Галиев, А. А. Зайцев, А. И. Данилов, И. С. Васильевский i in. "Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K". Физика и техника полупроводников 55, nr 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.
Pełny tekst źródłaShen, Jinyong, Tianyun Zhu, Jing Zhou, Zeshi Chu, Xiansong Ren, Jie Deng, Xu Dai i in. "High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors". Sensors 23, nr 1 (24.12.2022): 168. http://dx.doi.org/10.3390/s23010168.
Pełny tekst źródłaRozprawy doktorskie na temat "SOA integrated optics Quantum wells"
Yu, Shuqi. "Semiconductor optical amplifiers for future telecom system". Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAS006.
Pełny tekst źródłaThe continuous increase in data transmission demands is compelling optical networks to evolve and enhance their transmission capacity. As the spectral efficiency of optical fibers seems to have reached its limit, one of the best solutions is to extend the spectral bandwidth of optical systems. Considering the demand for large-bandwidth optical amplification systems, we decided to research semiconductor optical amplifiers (SOA) as they offer customized gain and flexible bandwidth expansion, which has good integrability and low cost as well. Historically, SOA faced limitations in terms of noise figures, nonlinear distortions, and polarization sensitivity. However, recent advancements in design have shown promising results, positioning SOAs as viable candidates for future optical transmission solutions. The objective of my thesis is to develop SOAs that mitigate the drawbacks, having a low noise figure and high saturation output power, to make them suitable for using in wide-bandwidth wavelength division multiplexing (WDM) optical networks. In this work, we started with a quick introduction to SOA's basic principles. Then, I demonstrate our three standard designs, measurement results, and improvement ideas, accompanied by a simple model for further optimization. After that, we show some advanced designs and their excellent results. In the end, the application of SOAs in optical transmission systems was explored, highlighting their role in in-line amplifier modules. This research contributes to advancing the understanding and practical application of SOAs in optical communication systems
May-Arrioja, Daniel. "INTEGRATED INP PHOTONIC SWITCHES". Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3288.
Pełny tekst źródłaPh.D.
Other
Optics and Photonics
Optics
Chaisakul, Papichaya. "Ge/SiGe quantum well devices for light modulation, detection, and emission". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.
Pełny tekst źródłaLiu, Danyu. "GaAs-based quantum well and quantum dot compact microlasers". Phd thesis, 2012. http://hdl.handle.net/1885/150426.
Pełny tekst źródłaKsiążki na temat "SOA integrated optics Quantum wells"
R, Adams Alfred, Europtica-Services I. C i Society of Photo-optical Instrumentation Engineers., red. Quantum wells and superlattices in optoelectronic devices and integrated optics: 17-18 November 1987, Cannes, France. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.
Znajdź pełny tekst źródłaAdams, Alfred R. Quantum Wells Superlattices in Optoelectronic Devices and Integrated Optics (Proceedings / SPIE). Society of Photo Optical, 1988.
Znajdź pełny tekst źródłaStreszczenia konferencji na temat "SOA integrated optics Quantum wells"
Kost, Alan R., Nayer Eradat, Xiaolan Sun, Espen Selvig, Bjorn-Ove Fimland i David H. Chow. "GaAsSb quantum wells for optoelectronics and integrated optics". W Frontiers in Optics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/fio.2003.thm4.
Pełny tekst źródłaChoy, Wallace C. H., Jian Jun He, Ming Li, Yan Feng i Emil S. Koteles. "InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators". W Symposium on Integrated Optics, redaktorzy Giancarlo C. Righini i Seppo Honkanen. SPIE, 2001. http://dx.doi.org/10.1117/12.426830.
Pełny tekst źródłaMiller, D. A. B. "Physics and Applications of Quantum Wells in Optics". W Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.
Pełny tekst źródłaQu, Fanyao, N. O. Dantas i P. C. Morais. "Anomalous shift of the recombination energy in single asymmetric quantum wells". W Symposium on Integrated Optics, redaktorzy Yasuhiko Arakawa, Peter Blood i Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432619.
Pełny tekst źródłaPogossian, Souren P., Adrian P. Vonsovici i Lili Vescan. "(SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs". W Symposium on Integrated Optics, redaktorzy David J. Robbins, John A. Trezza i Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426923.
Pełny tekst źródłaMiyamoto, Tomoyuki, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama i Kenichi Iga. "CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers". W Symposium on Integrated Optics, redaktorzy Yasuhiko Arakawa, Peter Blood i Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432570.
Pełny tekst źródłaWu, Bing-Ruey, Ching-Fuh Lin, Lih-Wen Laih i Tien-Tsorng Shih. "Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells". W Symposium on Integrated Optics, redaktorzy Suning Tang i Yao Li. SPIE, 2001. http://dx.doi.org/10.1117/12.428027.
Pełny tekst źródłaWen, Tzu-Chi, Shih-Chang Lee i Wei-I. Lee. "Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells". W Symposium on Integrated Optics, redaktorzy H. Walter Yao i E. F. Schubert. SPIE, 2001. http://dx.doi.org/10.1117/12.426844.
Pełny tekst źródłaSun, Handong, Takayuki Makino, Tien T. Nguyen, Yusaburo Segawa, ZiKang Tang, George K. Wong, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura i Hideomi Koinuma. "Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques". W Symposium on Integrated Optics, redaktorzy Ghassan E. Jabbour i Hideomi Koinuma. SPIE, 2001. http://dx.doi.org/10.1117/12.424747.
Pełny tekst źródłaKoren, U., G. Eisenstein, R. S. Tucker, T. L. Koch i B. I. Miller. "Integrated Multiple Quantum Well Lasers and Optical Amplifiers at 1.55 Micron Wavelength". W Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tuc2.
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