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Artykuły w czasopismach na temat „Sn-Te alloys”

Autor: Grafiati
Data publikacji: 6 września 2023
Data aktualizacji: 7 września 2023

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1

Kumar, Bhupendra, Manas Paliwal, Chandra Sekhar Tiwary i Min-Kyu Paek. "Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model". Metals 11, nr 9 (30.08.2021): 1363. http://dx.doi.org/10.3390/met11091363.

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Thermoelectric (TE) materials are of great interest to many researchers because they directly convert electric and thermal energy in a solid state. Various materials such as chalcogenides, clathrates, skutterudites, eutectic alloys, and intermetallic alloys have been explored for TE applications. The Ga-Sn-Te system exhibits promising potential as an alternative to the lead telluride (PbTe) based alloys, which are harmful to environments because of Pb toxicity. Therefore, in this study, thermodynamic optimization and critical evaluation of binary Ga-Sn, binary Sn-Te, and ternary Ga-Sn-Te systems have been carried out over the whole composition range from room temperature to above liquidus temperature using the CALPHAD method. It is observed that Sn-Te and Ga-Te liquids show the strong negative deviation from the ideal solution behavior. In contrast, the Ga-Sn liquid solution has a positive mixing enthalpy. These different thermodynamic properties of liquid solution were explicitly described using Modified Quasichemical Model (MQM) in the pair approximation. The asymmetry of ternary liquid solution in the Ga-Sn-Te system was considered by adopting the toop-like interpolation method based on the intrinsic property of each binary. The solid phase of SnTe was optimized using Compound Energy Formalism (CEF) to explain the high temperature homogeneity range, whereas solid solution, Body-Centered Tetragonal (BCT) was optimized using a regular solution model. Thermodynamic properties and phase diagram in the Ga-Sn-Te and its sub-systems were reproduced successfully by the optimized model parameters. Using the developed database, we also suggested several ternary eutectic compositions for designing TE alloy with improved properties.
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2

Liao, Chien-Neng, i Ching-Hua Lee. "Suppression of vigorous liquid Sn/Te reactions by Sn–Cu solder alloys". Journal of Materials Research 23, nr 12 (grudzień 2008): 3303–8. http://dx.doi.org/10.1557/jmr.2008.0409.

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Reactions of molten Sn–xCu (x = 0.05 to 1.0) alloys with Te substrate at 250 °C were investigated. A dosage of 0.1 wt% Cu in Sn is found to be effective in suppressing the vigorous Sn/Te reaction by forming a thin CuTe at the solder/Te interface. The CuTe morphology changes from irregular clusters into a layered structure with increasing Cu content in Sn. With the same reaction time, the CuTe thickness increases proportionally to the square root of Cu content in Sn–Cu alloys, suggesting a diffusion-controlled growth for CuTe.
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3

Halm, Th, W. Hinz i W. Hoyer. "Neutron scattering on molten Ge-Sn-Te alloys". Physica Scripta T57 (1.01.1995): 33–35. http://dx.doi.org/10.1088/0031-8949/1995/t57/006.

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4

Gelbstein, Yaniv. "Pb1−x Sn x Te Alloys: Application Considerations". Journal of Electronic Materials 40, nr 5 (8.12.2010): 533–36. http://dx.doi.org/10.1007/s11664-010-1435-6.

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5

Rashad, M., R. Amin i M. M. Hafiz. "Crystallization kinetics of glassy Se–Te–Sn alloys". Canadian Journal of Physics 93, nr 8 (sierpień 2015): 898–904. http://dx.doi.org/10.1139/cjp-2014-0186.

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The present article deals with the differential thermal analyses (DTA) study of Se–Te glasses containing Sn. DTA runs are taken at six different heating rates (5, 10, 15, 18, 20, and 22 K min−1). The crystallization data are examined in terms of modified Kissinger, Mahadevan method, and Augis and Bennett approximation for the non-isothermal crystallization. Results of DTA under non-isothermal conditions on the glasses of the Se80Te20--xSnx (x = 3 and 9) are reported and discussed at different heating rates. The glass transition temperatures (Tg), the onset crystallization temperatures (Tc), and the peak temperature of crystallization (Tp) were found to be dependent on the compositions and the heating rates. From the dependence on heating rates of (Tg) and (Tp) the activation energy for glass transition (Eg) and the activation energy for crystallization (Ec) are calculated and their composition dependence discussed.
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6

Марченко, А. В., П. П. Серегин, Е. И. Теруков i К. Б. Шахович. "Антиструктурные дефекты в полупроводниковых стеклах Ge-Te и Ge-As-Te". Физика и техника полупроводников 53, nr 5 (2019): 718. http://dx.doi.org/10.21883/ftp.2019.05.47570.9032.

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AbstractThe formation of antisite defects in Ge_20Te_80 and Ge_15As_4Te_81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the ^119 mm Sn(^119 m Sn), ^119 m Te(^119 m Sn), ^125Sn(^125Te), and ^125 m Te(^125Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
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7

Neumann, Hartmut, Walter Hoyer i Manfred Wobst. "Neutron and X-ray Scattering on Liquid Eutectic Ge-Te, Sn-Te and Pb-Te Alloys". Zeitschrift für Naturforschung A 46, nr 9 (1.09.1991): 739–45. http://dx.doi.org/10.1515/zna-1991-0902.

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AbstractFrom neutron and X-ray diffraction investigations on liquid Ge15Te85, Sn16Te84 and Pb14.5Te85.5 alloys the coordination numbers and nearest neighbour distances of these systems are obtained. The partial structure factors and partial pair correlations reveal that the short-range order of the eutectic Ge -Te melt differs from that of the eutectic Sn-Te and Pb-Te melts
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8

Venkatraman, Mahadevan, Andreas Schlieper, Roger Blachnik i Bernd Gather. "The Excess Enthalpies of Liquid Cu-Sn-Te Alloys". International Journal of Materials Research 85, nr 5 (1.05.1994): 354–59. http://dx.doi.org/10.1515/ijmr-1994-850513.

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9

Abdel-Rahim, M. A., A. Gaber, A. A. Abu-Sehly i N. M. Abdelazim. "Crystallization study of Sn additive Se–Te chalcogenide alloys". Thermochimica Acta 566 (sierpień 2013): 274–80. http://dx.doi.org/10.1016/j.tca.2013.06.009.

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10

Tsuchiya, Yoshimi, i Toshikatsu Takahashi. "The Sound Velocity in the Liquid Sn–Te Alloys". Journal of the Physical Society of Japan 58, nr 11 (15.11.1989): 4012–18. http://dx.doi.org/10.1143/jpsj.58.4012.

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11

Gelbstein, Y., O. Ben-Yehuda, E. Pinhas, T. Edrei, Y. Sadia, Z. Dashevsky i M. P. Dariel. "Thermoelectric Properties of (Pb,Sn,Ge)Te-Based Alloys". Journal of Electronic Materials 38, nr 7 (21.01.2009): 1478–82. http://dx.doi.org/10.1007/s11664-008-0652-8.

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12

Patial, Balbir Singh, Nagesh Thakur i S. K. Tripathi. "Crystallization study of Sn additive Se–Te chalcogenide alloys". Journal of Thermal Analysis and Calorimetry 106, nr 3 (1.05.2011): 845–52. http://dx.doi.org/10.1007/s10973-011-1579-5.

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13

Gather, B., E. Irle i R. Blachnik. "The excess enthalpies of liquid GaGeTe and GaSnTe alloys". Journal of the Less Common Metals 136, nr 1 (grudzień 1987): 183–91. http://dx.doi.org/10.1016/0022-5088(87)90023-3.

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14

Heera, Pawan, Anup Kumar i Raman Sharma. "Crystallization kinetics of tellurium-rich Se–Te–Sn glassy alloys". Journal of Thermal Analysis and Calorimetry 130, nr 2 (22.05.2017): 661–69. http://dx.doi.org/10.1007/s10973-017-6442-x.

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15

Sharma, R. C., i Y. A. Chang. "The Sn−Te (Tin-Tellurium) system". Bulletin of Alloy Phase Diagrams 7, nr 1 (luty 1986): 72–80. http://dx.doi.org/10.1007/bf02874985.

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16

Siol, Sebastian, Aaron Holder, Brenden R. Ortiz, Philip A. Parilla, Eric Toberer, Stephan Lany i Andriy Zakutayev. "Solubility limits in quaternary SnTe-based alloys". RSC Advances 7, nr 40 (2017): 24747–53. http://dx.doi.org/10.1039/c6ra28219a.

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A combined theoretical and experimental approach was used to determine the equilibrium as well as non-equilibrium solubility lines in the quaternary Sn1−yMnyTe1−xSex alloy space, revealing a large area of accessible metastable phase space.
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17

Guo, Xing Long. "Making Thermoelectric Materials SnxGa1−xNx Alloys by Magnetron Sputtering Technology". Advanced Materials Research 1120-1121 (lipiec 2015): 490–92. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.490.

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Thermoelectric materials are of interest for applications as heat pumps and power generators. Thermoelectric properties of SnxGa1−xN alloys have been investigated. It was found that as Sn concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of ZT. The valuge of ZT was found to be 0.07 at 300 K for Sn0.38Ga0.64N alloy. The results indicate that SnGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.
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18

NEUMANN, H., W. HOYER i M. WOBST. "ChemInform Abstract: Neutron and X-Ray Scattering on Liquid Eutectic Ge-Te, Sn-Te and Pb-Te Alloys." ChemInform 22, nr 48 (22.08.2010): no. http://dx.doi.org/10.1002/chin.199148004.

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19

Shi, Haizhou, Xinkai Shen, Hui Yang, Yawen Zhang, Yinqi Chen, Yuting Chen, Tianxiang Xu i Guoxiang Wang. "Investigation of thermoelectric properties in binary Sb-Te and Sn-Te alloys during crystallization process". Journal of Non-Crystalline Solids 562 (czerwiec 2021): 120767. http://dx.doi.org/10.1016/j.jnoncrysol.2021.120767.

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20

Knura, Rafal, Taras Parashchuk, Akira Yoshiasa i Krzysztof T. Wojciechowski. "Origins of low lattice thermal conductivity of Pb1−xSnxTe alloys for thermoelectric applications". Dalton Transactions 50, nr 12 (2021): 4323–34. http://dx.doi.org/10.1039/d0dt04206d.

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21

Zhan, Yongzhong, Jianbo Ma, Guanghua Zhang, Zhaohua Hu i Chunhui Li. "Phase equilibria of Gd–Sn–Te system at Te rich corner". Journal of Alloys and Compounds 475, nr 1-2 (maj 2009): 281–85. http://dx.doi.org/10.1016/j.jallcom.2008.08.015.

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22

Abdelazim, Nema M., M. A. Dabban, M. A. Abdel-Rahim i A. A. Abu-Sehly. "Optical and other physical characteristics of amorphous Se–Te–Sn alloys". Materials Science in Semiconductor Processing 39 (listopad 2015): 156–61. http://dx.doi.org/10.1016/j.mssp.2015.05.005.

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23

Ben-Ayoun, Dana, Yatir Sadia i Yaniv Gelbstein. "High temperature thermoelectric properties evolution of Pb1-Sn Te based alloys". Journal of Alloys and Compounds 722 (październik 2017): 33–38. http://dx.doi.org/10.1016/j.jallcom.2017.06.075.

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24

Lee, Se Woong, Okmin Park i Sang-il Kim. "Enhanced Thermoelectric Transport Properties of n -Type SnSe2 Polycrystalline Alloys by Te Doping". International Journal of Energy Research 2023 (1.06.2023): 1–9. http://dx.doi.org/10.1155/2023/2900242.

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SnSe2, a layered posttransition metal chalcogenide, has attracted attention as a high-efficiency thermoelectric material owing to the intrinsic low thermal conductivity. Herein, a series of Sn S e 1 − x T e x 2 ( x = 0 , 0.025, 0.0375, 0.075, 0.1, and 0.125) samples was synthesized to examine the influence of Te doping on electrical, thermal, and thermoelectric properties of n -type SnSe2 alloys. Interestingly, carrier concentration and mobility were simultaneously increased for x = 0.025 and 0.0375. Therefore, electrical conductivity is increased for x = 0.025 and 0.0375 compared to that for the pristine sample, resulting in power factor increase to 0.25 mW/mK2 for x = 0.025 by 12% at 790 K. However, reductions in the electrical conductivity were observed for the samples with x > 0.0375 due to the decrease in carrier mobility for x > 0.0375 , resulting in the decrease of power factor. The lattice thermal conductivity slightly reduced for the doped samples owing to point defects of Te and vacancies originating from Te doping. Consequently, the thermoelectric figure of merit ( z T ) was increased to 0.45 and 0.49 for Sn(Se1.975Te0.025)2 ( x = 0.025 ) and Sn(Se1.9625Te0.0375)2 ( x = 0.0375 ) samples at 790 K, respectively, which was enhanced by 40% and 53% compared to that for undoped SnSe2. The enhanced electrical transport properties were validated by weighted mobility, density-of-state effective mass, and quality factor, and the reduction of the lattice thermal conductivity is analyzed by the Debye-Callaway model.
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25

Li, S. M., J. Q. Li, L. Yang, F. S. Liu, W. Q. Ao i Y. Li. "Phases and thermoelectric properties in stoichiometric Sn 1−x Mn x Te and non-stoichiometric Sn 1−y Mn 1.1y Te alloys". Materials & Design 108 (październik 2016): 51–59. http://dx.doi.org/10.1016/j.matdes.2016.06.084.

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26

Soares, J., M. A. G. Nunes, E. M. M. Flores, J. N. G. Paniz i V. L. Dressler. "Simultaneous determination of As, Bi, Sb, Se, Sn and Te in lead alloy using flow injection-hydride generation-inductively coupled plasma mass spectrometry". Analytical Methods 8, nr 37 (2016): 6805–14. http://dx.doi.org/10.1039/c6ay01726f.

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A method based on flow injection-hydride generation-inductively coupled plasma mass spectrometry (FI-HG-ICP-MS) for the determination of trace amounts of As, Bi, Sb, Se, Sn and Te in lead alloys was developed.
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27

Wang, Xiaotian, Mengxin Wu, Tie Yang i Rabah Khenata. "Effect of Zn doping on phase transition and electronic structures of Heusler-type Pd2Cr-based alloys: from normal to all-d-metal Heusler". RSC Advances 10, nr 30 (2020): 17829–35. http://dx.doi.org/10.1039/d0ra02951c.

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By first-principles calculations, for Heusler alloys Pd2CrZ (Z = Al, Ga, In, Tl, Si, Sn, P, As, Sb, Bi, Se, Te, Zn), the effect of Zn doping on their phase transition and electronic structure has been studied in this work.
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28

Shtanov, V. I., O. V. Zatolochnaya, K. Yu Veremeev, M. E. Tamm i O. E. Timofeeva. "A contribution to the phase diagram of the system Ge–Sn–Te and the conditions of (Sn,Ge)Te crystal growth". Journal of Alloys and Compounds 476, nr 1-2 (maj 2009): 812–16. http://dx.doi.org/10.1016/j.jallcom.2008.09.119.

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29

Yashina, Lada, i Volkmar Leute. "The phase diagrams of the quasibinary systems (Pb,Ge)Te and (Ge,Sn)Te". Journal of Alloys and Compounds 313, nr 1-2 (grudzień 2000): 85–92. http://dx.doi.org/10.1016/s0925-8388(00)01172-5.

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30

Yuan, Xiao-Juan, Jian-Zhe Liu, Feng Ning, Yong Zhang i Li-Ming Tang. "Band Alignment for Ambipolar-Doping of Sn x Zn 1− x Te Alloys". Communications in Theoretical Physics 57, nr 4 (kwiecień 2012): 723–26. http://dx.doi.org/10.1088/0253-6102/57/4/28.

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31

Aramanda, Shanmukha Kiran, Sai Kiran Salapaka, Sumeet Khanna, Kamanio Chattopadhyay i Abhik Choudhury. "Exotic colony formation in Sn-Te eutectic system". Acta Materialia 197 (wrzesień 2020): 108–21. http://dx.doi.org/10.1016/j.actamat.2020.07.036.

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32

Chorba, O. J., M. J. Filep, A. I. Pogodin, T. O. Malakhovska i M. Yu Sabov. "TRIANGULATION OF THE Cu-Sn-Se SYSTEM". Scientific Bulletin of the Uzhhorod University. Series «Chemistry» 46, nr 2 (10.02.2022): 22–27. http://dx.doi.org/10.24144/2414-0260.2021.2.22-27.

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Copper-containing compounds exhibit a wide range of properties, including thermoelectric, photoelectric, optical magnetic, superionic, superconducting, etc., which determines the areas of their practical use. In recent years, studies of complex copper selenides as promising thermoelectric (TE) materials have been actively carried out due to their advantages over traditional TE materials. Like binary Cu2Se, ternary selenides have low phonon thermal conductivity and high electrical conductivity and thermoelectric quality factor. Typically, copper-containing compounds belong to the p-type conductors and crystallize in four main structural types, among which phases with a diamond-like structure should be distinguished. Data on the nature of physicochemical interaction in the Cu – Sn – Se system are limited and contradictory. In view of this, it is important to carry out the triangulation of the ternary system Cu–Sn–Se, which is the first stage of the study of multicomponent systems. The investigated alloys of the Cu – Sn – Se system were obtained by fusing elementary components of high purity in vacuum quartz ampoules. The obtained alloys were investigated using X-ray powder diffraction (XRD) and differential thermal (DTA) analyzes. At the temperature of homogenizing annealing (170 ° С) there are seven binary Cu2Se, CuSe, CuSe2, Cu6Sn5, Cu3Sn, SnSe, SnSe2 and one ternary phase Cu2SnSe3 stable in the Cu – Sn – Se ternary system. The existence of the ternary phase of Cu2SnSe4 has not been confirmed, because the alloy corresponding to its stoichiometric composition is a mixture of Cu2SnSe3 and Se. To establish quasibinary sections of the Cu – Sn – Se system were performed the synthesis and phase analysis of only the significant points in the most informative areas. This ensures the establishment of the nature of the maximum number of quasibinary sections with a minimum number of syntheses. According to the results of phase analysis in combination with the literature data the triangulation of the Cu – Sn – Se system was carried out at 170 ° С. The quasibinarity of the Cu2Se – SnSe, Cu2Se – SnSe2, Cu2SnSe3 – Se, Cu2SnSe3 – SnSe, Cu6Sn5 – SnSe, Cu3Sn – SnSe, and Cu3Sn – Cu2Se sections was confirmed, and the quasibinarity of the Cu3Sn – Cu2Se was established at first. Keywords: triangulation; quasibinary section; phase analysis.
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33

Pal, Shiv Kumar, Neeraj Mehta i A. Dahshan. "Signature Of stiffness transition in electrical behaviour of Se-Te-Sn-Ge glassy alloys". Philosophical Magazine 101, nr 23 (6.10.2021): 2528–40. http://dx.doi.org/10.1080/14786435.2021.1984604.

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Rao, Vandita, N. Mehta, Amit Kumar i D. K. Dwivedi. "Effect of Sb incorporation on thermo-mechanical properties of amorphous Se-Te-Sn alloys". Materials Research Express 5, nr 6 (20.06.2018): 065206. http://dx.doi.org/10.1088/2053-1591/aac99e.

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Gelbstein, Yaniv, Ohad Ben-Yehuda, Zinovy Dashevsky i Moshe P. Dariel. "Phase transitions of p-type (Pb,Sn,Ge)Te-based alloys for thermoelectric applications". Journal of Crystal Growth 311, nr 18 (wrzesień 2009): 4289–92. http://dx.doi.org/10.1016/j.jcrysgro.2009.07.018.

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Kumar, Rajneesh, Pankaj Sharma, P. B. Barman, Vineet Sharma, S. C. Katyal i V. S. Rangra. "Thermal stability and crystallization kinetics of Se–Te–Sn alloys using differential scanning calorimetry". Journal of Thermal Analysis and Calorimetry 110, nr 3 (25.11.2011): 1053–60. http://dx.doi.org/10.1007/s10973-011-2062-z.

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37

Parasyuk, O. V. "Phase relations of the Ag2SnS3–HgS and Ag33.3Sn16.7Se/Te/50–HgSe/Te/ section in Ag–Hg–Sn–S/Se,Te/ systems". Journal of Alloys and Compounds 291, nr 1-2 (wrzesień 1999): 215–19. http://dx.doi.org/10.1016/s0925-8388(99)00288-1.

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38

Mallik, Ramesh Chandra. "Transport Properties of Sn-Filled and Te-Doped CoSb3 Skutterudites". Metals and Materials International 14, nr 5 (23.10.2008): 615–20. http://dx.doi.org/10.3365/met.mat.2008.10.615.

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39

Cui, Jiaxin, Cuiping Guo, Lei Zou, Changrong Li i Zhenmin Du. "Experimental investigation and thermodynamic modeling of the Se–Sn–Te system". Journal of Alloys and Compounds 642 (wrzesień 2015): 153–65. http://dx.doi.org/10.1016/j.jallcom.2015.04.049.

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Sukhomlinov, Dmitry, Lassi Klemettinen, Hugh O’Brien, Pekka Taskinen i Ari Jokilaakso. "Behavior of Ga, In, Sn, and Te in Copper Matte Smelting". Metallurgical and Materials Transactions B 50, nr 6 (23.09.2019): 2723–32. http://dx.doi.org/10.1007/s11663-019-01693-y.

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Abstract The distributions of Ga, In, Sn, and Te between copper-iron mattes and silica-saturated iron silicate slags over a wide range of matte grades 55 to 75 pct Cu were determined at 1300 °C using a gas-phase equilibration-quenching technique and direct phase composition analysis by Electron Probe X-ray Microanalysis and Laser Ablation-Inductively Coupled Plasma-Mass Spectrometry. Alumina from aluminum, a typical minor element of electric and electronic copper scrap, and lime were adopted as slag modifiers for increasing the trace element recoveries. Gallium and tin were distributed predominantly in the slag, indium preferred sulfide matte at low matte grades and slag at high, whereas tellurium strongly favored the sulfide matte in particular in high matte grades. The slag modifiers alumina and lime had a minor impact on the distribution coefficients of gallium and tin, but for indium and tellurium the distribution coefficients were more strongly affected by the basic oxides. The strong tendencies of tin and tellurium to vaporize at the experimental temperature were confirmed.
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41

Lee, Jae-Uk, Deuk-Hee Lee, Beomjin Kwon, Dow-Bin Hyun, Sahn Nahm, Seung-Hyub Baek i Jin-Sang Kim. "Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys". Journal of Electronic Materials 44, nr 6 (8.01.2015): 1926–30. http://dx.doi.org/10.1007/s11664-014-3598-z.

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Born, Th. "Calculation of the Electrical Resistivity of Liquid Sn-Te Alloys according to the Effective-Medium Theory". physica status solidi (b) 151, nr 1 (1.01.1989): K41—K44. http://dx.doi.org/10.1002/pssb.2221510151.

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Gelbstein, Y., Z. Dashevsky, R. Kreizman, Y. George, M. Gelbstein i M. P. Dariel. "Annealing Effects on Powder Metallurgy Based Pb1-xSnxTe Materials for Thermoelectric Applications". Key Engineering Materials 336-338 (kwiecień 2007): 860–63. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.860.

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Streszczenie:
Lead tin telluride based alloys are known p-type materials for thermoelectric applications, in the 50-600oC temperature range. These alloys combine desired features of mechanical and thermoelectric properties. The electronic transport properties of PbTe and Pb1-xSnxTe materials may be strongly dependent on the preparation technique. Powder metallurgy process is known to introduce defects and strains, that may alter carrier concentration. Under such non-equilibrium conditions the thermoelectric properties are instable at the operating temperature. An appropriate annealing treatment can eliminate this effect.. The present communication describes the annealing treatment applied to cold compacted and sintered Pb1-xSnxTe materials.
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