Gotowe bibliografie tematyczne / Single-Electron physics

Gotowa bibliografia na temat „Single-Electron physics”

Autor: Grafiati
Data publikacji: 22 czerwca 2024

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Spis treści

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Single-Electron physics”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "Single-Electron physics"

1

Osborne, I. S. "APPLIED PHYSICS: Single-Electron Shuttle". Science 293, nr 5535 (31.08.2001): 1559b—1559. http://dx.doi.org/10.1126/science.293.5535.1559b.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

KASTNER, M. A. "THE PHYSICS OF SINGLE ELECTRON TRANSISTORS". International Journal of High Speed Electronics and Systems 12, nr 04 (grudzień 2002): 1101–33. http://dx.doi.org/10.1142/s0129156402001940.

Pełny tekst źródła
Streszczenie:
The single electron transistor (SET) is a nanometer-size device that turns on and off again every time one electron is added to it. In this article, the physics of the SET is reviewed. The consequences of confining electrons to a small region of space are that both the charge and energy are quantized. We review how the charge states and energy states of the confined electrons, sometimes called an artificial atom, are measured, and how the precision of these measurements depends on temperature. We also discuss the coupling of electrons inside the artificial atom to those in the leads of the SET, which results in the Kondo effect. We review measurements of the Kondo effect, which demonstrate that the Anderson Hamiltonian provides a quantitative description of the SET.
Style APA, Harvard, Vancouver, ISO itp.
3

Kastner, M. A., i D. Goldhaber-Gordon. "Kondo physics with single electron transistors". Solid State Communications 119, nr 4-5 (lipiec 2001): 245–52. http://dx.doi.org/10.1016/s0038-1098(01)00106-5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Kobayashi, Shun-ichi. "Fundamental Physics of Single Electron Transport". Japanese Journal of Applied Physics 36, Part 1, No. 6B (30.06.1997): 3956–59. http://dx.doi.org/10.1143/jjap.36.3956.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Dempsey, Kari J., David Ciudad i Christopher H. Marrows. "Single electron spintronics". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, nr 1948 (13.08.2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.

Pełny tekst źródła
Streszczenie:
Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.
Style APA, Harvard, Vancouver, ISO itp.
6

Seneor, Pierre, Anne Bernand-Mantel i Frédéric Petroff. "Nanospintronics: when spintronics meets single electron physics". Journal of Physics: Condensed Matter 19, nr 16 (5.04.2007): 165222. http://dx.doi.org/10.1088/0953-8984/19/16/165222.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Devoret, Michel H., i Christian Glattli. "Single-electron transistors". Physics World 11, nr 9 (wrzesień 1998): 29–34. http://dx.doi.org/10.1088/2058-7058/11/9/26.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Jamshidnezhad, K., i M. J. Sharifi. "Physics-based analytical model for ferromagnetic single electron transistor". Journal of Applied Physics 121, nr 11 (21.03.2017): 113905. http://dx.doi.org/10.1063/1.4978425.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Seike, Kohei, Yasushi Kanai, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue i Kazuhiko Matsumoto. "Carbon nanotube single-electron transistors with single-electron charge storages". Japanese Journal of Applied Physics 54, nr 6S1 (24.04.2015): 06FF05. http://dx.doi.org/10.7567/jjap.54.06ff05.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Wu Fan i Wang Tai-Hong. "Single-electron control by single-electron pump and its stability diagrams". Acta Physica Sinica 52, nr 3 (2003): 696. http://dx.doi.org/10.7498/aps.52.696.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Rozprawy doktorskie na temat "Single-Electron physics"

1

Granger, Ghislain. "Spin effects in single-electron transistors". Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/32305.

Pełny tekst źródła
Streszczenie:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.
Includes bibliographical references (p. 169-175).
Basic electron transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With a magnetic field parallel to the motion of the electrons, single-particle energy levels undergo Zeeman splitting according to their spin. The g-factor describing this splitting is extracted in the spin-flip inelastic cotunneling regime. The Kondo splitting is linear and slightly greater than the Zeeman splitting. At zero magnetic field, the spin triplet excited state energy and its dependence on gate voltage are measured via sharp Kondo peaks superimposed on inelastic cotunneling thresholds. Singlet-triplet transitions and an avoided crossing are analyzed with a simple two-level model, which provides information about the exchange energy and the orbital mixing. With four electrons on the quantum dot, the spin triplet state has two characteristic energy scales, consistent with a two-stage Kondo effect description. The low energy scale extracted from a nonequilibrium measurement is larger than those extracted in equilibrium.
by Ghislain Granger.
Ph.D.
Style APA, Harvard, Vancouver, ISO itp.
2

Field, Mark. "Single electron effects in semiconductor microstructures". Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308187.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Gillingham, David R. "Free electron laser single-particle dynamics theory". Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA246245.

Pełny tekst źródła
Streszczenie:
Thesis (M.S. in Physics)--Naval Postgraduate School, December 1990.
Thesis Advisor(s): Colson, William B. Second Reader: Maruyama, Xavier K. "December 1990." Description based on title screen as viewed on March 31, 2010. DTIC Identifier(s): Free Electron Lasers, Computerized Simulations, Parmela Computer Programs, Cray Computers, Theses. Author(s) subject terms: Free Electron Lasers, Computerized Simulation. Includes bibliographical references (p. 52-53). Also available in print.
Style APA, Harvard, Vancouver, ISO itp.
4

Goldhaber-Gordon, David Joshua 1972. "The Kondo effect in a single-electron transistor". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9450.

Pełny tekst źródła
Streszczenie:
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999.
Title as it appears in MIT commencement exercises program, June 1999, has the added subtitle: Strong coupling and many body effects.
Includes bibliographical references (p. 115-124).
The Kondo effect, which occurs when a metal with magnetic impurities is cooled to low temperatures, has been a focus of research in solid-state physics for several decades. I have designed, fabricated, and measured a system which behaves as a single "artificial" impurity in a metal, displaying the Kondo effect. This so-called Single-Electron Transistor (SET) has several advantages over the classic bulk Kondo systems. Most obviously, only one impurity is involved, so there is no need to worry about interactions between impurities, or different impurities feeling different environments. But even more importantly all the parameters of the system, such as the binding energy of electrons on the impurity and the tunneling rate between metal and impurity, can be tuned in-situ, allowing detailed quantitative comparison to thirty years of theoretical developments whose details could not be tested in previously-studied Kondo systems.
by David Joshua Goldhaber-Gordon.
Ph.D.
Style APA, Harvard, Vancouver, ISO itp.
5

Foxman, Ethan Bradley 1966. "Single electron charging and quantum effects in semiconductor nanostructures". Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/72770.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Dial, Oliver Eugene III. "Single particle spectrum of the two dimensional electron gas". Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/45158.

Pełny tekst źródła
Streszczenie:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2007.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 251-265).
Accurate spectroscopy has driven advances in chemistry, materials science, and physics. However, despite their importance in the study of highly correlated systems, two-dimensional systems (2DES) have proven difficult to probe spectroscopically. Typical energy scales are on the order of a millielectron volt (meV), requiring high resolution, while correlated states of interest, such as those found in the integer and fractional quantum Hall effect, are destroyed by excessive electron heating. Approaches based on tunneling have been hampered by problems such as ohmic heating and low in-plane conductivity, while optical approaches probe long-wavelength excitations which can be difficult to interpret. Here we present a refined spectroscopic technique, time domain capacitance spectroscopy (TDCS), with which we measure the single particle density of states (DOS) of a 2DES with temperature-limited resolution. In TDCS, sharp voltage pulses disequilibrate a metallic contact from a nearby 2DES, inducing a tunnel current. We detect this current by monitoring the image charge of the tunneled electrons on a distant electrode. No ohmic contact to the 2DES is required. The technique works when the 2DES is empty or has vanishing in-plane conductivity, as frequently occurs in studying the quantum Hall effect. Using TDCS, we perform unprecedentedly high resolution measurements of the DOS of a cold 2DES in GaAs over a range from 15 meV above to 15 meV below the Fermi surface. We provide the first direct measurements of the width of the single-particle exchange gap and single particle lifetimes in the quantum Hall system. At higher energies, we observe the splitting of highly excited Landau levels by spin polarization at the Fermi surface, demonstrating that the high energy spectrum reflects the low temperature ground state in these highly correlated systems. These measurements bring to light the difficult to reach and beautiful structure present far from the Fermi surface.
by Oliver Eugene Dial, III.
Ph.D.
Style APA, Harvard, Vancouver, ISO itp.
7

Hemingway, Bryan J. "Magnetoconductance and Dynamic Phenomena in Single-Electron Transistors". University of Cincinnati / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352397253.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Marnham, Lachlan Leslie. "Bi-electron bound states in single- and double-layer graphene nanostructures". Thesis, University of Exeter, 2016. http://hdl.handle.net/10871/23165.

Pełny tekst źródła
Streszczenie:
The prototypical exciton model of two interacting Dirac particles in graphene was analysed by Sabio et al, Phys. Rev. B 81, 045428 (2010), and it was found that in one of the electron-hole scattering channels the total kinetic energy vanishes, resulting in a singular behaviour. We show that this singularity can be removed by extending the quasiparticle dispersion, thus breaking the symmetry between upper and lower Dirac cones. The dynamics of an electron-electron pair are then mapped onto that of a single particle with negative mass and anisotropic dispersion. We show that the interplay between dispersion and repulsive interaction can result in the formation of bound, Cooper-pair-like, metastable states in double-layered hybrid structures. We analyse these states by calculating their binding energies, decay rates into the free- electron continuum and semiclassical trajectories. We also analyse the problem of bi-electron pairing with the inclusion of the two dominant many-body effects at zero temperature: screening of the Coulomb interaction by the Dirac sea, and reduction of the available phase space due to Pauli blocking of transitions into the states below the Fermi level. We show that these effects result in strong renormalization of the binding energy, but do not destroy the metastable states. Thus the binding energies are strongly dependent on the chemical potential owing to the combined effects of screening and Pauli blocking. Hence, the quasibound resonances can be tuned by electrostatic doping.
Style APA, Harvard, Vancouver, ISO itp.
9

Venkatachalam, Vivek. "Single Electron Probes of Fractional Quantum Hall States". Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10478.

Pełny tekst źródła
Streszczenie:
When electrons are confined to a two dimensional layer with a perpendicular applied magnetic field, such that the ratio of electrons to flux quanta \((\nu)\) is a small integer or simple rational value, these electrons condense into remarkable new phases of matter that are strikingly different from the metallic electron gas that exists in the absence of a magnetic field. These phases, called integer or fractional quantum Hall (IQH or FQH) states, appear to be conventional insulators in their bulk, but behave as a dissipationless metal along their edge. Furthermore, electrical measurements of such a system are largely insensitive to the detailed geometry of how the system is contacted or even how large the system is... only the order in which contacts are made appears to matter. This insensitivity to local geometry has since appeared in a number of other two and three dimensional systems, earning them the classification of "topological insulators" and prompting an enormous experimental and theoretical effort to understand their properties and perhaps manipulate these properties to create robust quantum information processors. The focus of this thesis will be two experiments designed to elucidate remarkable properties of the metallic edge and insulating bulk of certain FQH systems. To study such systems, we can use mesoscopic devices known as single electron transistors (SETs). These devices operate by watching single electrons hop into and out of a confining box and into a nearby wire (for measurement). If it is initially unfavorable for an electron to leave the box, it can be made favorable by bringing another charge nearby, modifying the energy of the confined electron and pushing it out of the box and into the nearby wire. In this way, the SET can measure nearby charges. Alternatively, we can heat up the nearby wire to make it easier for electrons to enter and leave the box. In this way, the SET is a sensitive thermometer. First, by operating the SET as an electrometer, we measure the local charge of the \(\nu = 5/2\) FQH state. An immediate consequence of measuring fractionally quantized conductance plateaus is that the charge of local excitations should be a fraction of \(e\), the charge of an electron. The simplest charge that would be expected at \(\nu = 5/2\) would \(e/2\). However, if the charged particles that condense into the \(\nu = 5/2\) FQH state are paired, the expected local charge becomes \(e/4\). By watching these local charges being added to compressible puddles at \(\nu = 5/2\) and \(\nu = 5/7\), we find that the local charge at \(\nu = 5/2\) is indeed \(e/4\), indicating that objects of charge \(e\) are pairing to form the ground state of the system. This has implications for the future possibility of detecting non-Abelian braiding statistics in this state, and is described in detail in Chapter 2. By further monitoring how eagerly these \(e/4\) particles enter puddles as we increase the temperature, we can attempt to identify the presence of some excess entropy related to an unconventional degeneracy of their ground state. Such an entropy would be expected if the \(\nu = 5/2\) state exhibited non-Abelian braiding statistics. Progress on these experiments and prospects for building a quantum computer are presented in Chapter 3. Next, by operating the SET as a thermometer, we monitor heat flow along the compressible edge and through the bulk of IQH and FQH states. As an edge is heated and charge on that edge is swept downstream by the external magnetic field, we expect that charge to carry the injected energy in the same downstream direction. However, for certain FQH states, this is not the case. By heating an edge with a quantum point contact (QPC) and monitoring the heat transported upstream and downstream, we find that heat can be transported upstream when the edge contains structure related to \(\nu = 2/3\) FQH physics. Surprisingly, this can be present even when the bulk is in a conventional insulating (IQH) state. Additionally, we unexpectedly find that the \(\nu = 1\) bulk is capable of transporting heat, while the \(\nu = 2\) and \(\nu = 3\) bulk are not. These experiments are presented in Chapter 4. Finally, in Chapter 5, we describe preliminary work on a very different type of topological material, the quantum spin Hall (QSH) insulator. Here, the spin of electrons takes the place of the external magnetic field, creating edge states that propagate in both directions. Each of these edges behaves as an ideal one-dimensional mode, with predicted resistance \(h/e^2\). By creating well-defined regions where these modes can exist, we identify and characterize the conductance associated with topological edges.
Physics
Style APA, Harvard, Vancouver, ISO itp.
10

Erbsen, Wes Corbin. "Non-dissociative single-electron ionization of diatomic molecules". Thesis, Kansas State University, 2013. http://hdl.handle.net/2097/15740.

Pełny tekst źródła
Streszczenie:
Master of Science
Department of Physics
Carlos Trallero
Over the past four decades, the single-electron ionization of atoms has been a subject of great interest within the ultra-fast community. While contemporary atomic ionization models tend to agree well with experiment across a wide range of intensities (10[superscript]13-10[superscript]15 W/cm[superscript]2), analogous models for the ionization of molecules are currently lacking in accuracy. The deficiencies present in molecular ionization models constitute a formidable barrier for experimentalists, who wish to model the single-electron ionization dynamics of molecules in intense laser fields. The primary motivation for the work presented in this thesis is to provide a comprehensive data set which can be used to improve existing models for the strong-field ionization of molecules. Our approach is to simultaneously measure the singly-charged ion yield of a diatomic molecule paired with a noble gas atom, both having commensurate ionization potentials. These measurements are taken as a function of the laser intensity, typically spanning two orders of magnitude (10[superscript]13-10[superscript]15 W/cm[superscript]2). By taking the ratio of the molecular to atomic yields as a function of laser intensity, it is possible to "cancel out" systematic errors which are common to both species, e.g. from laser instability, or temperature fluctuations. This technique is very powerful in our ionization studies, as it alludes to the distinct mechanisms leading to the ionization of both molecular and atomic species at the same intensity which are not a function of the experimental conditions. By using the accurate treatments of atomic ionization in tandem with existing molecular ionization models as a benchmark, we can use our experimental ratios to modify existing molecular ionization theories. We hope that the data procured in this thesis will be used in the development of more accurate treatments describing the strong-field ionization of molecules.
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Książki na temat "Single-Electron physics"

1

Scholze, Andreas. Simulation of single-electron devices. Konstanz: Hartung-Gorre, 2000.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Hans, Koch. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 (Sessions on SET and Mesoscopic Devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

1948-, Koch H., i Lübbig H. 1932-, red. Single-electron tunneling and mesoscopic devices: Proceedings of the 4th international conference, SQUID '91 (sessions on SET and mesoscopic devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin: Springer-Verlag, 1992.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

1927-, March Norman H., i Deb B. M, red. The Single-particle density in physics and chemistry. London: Academic Press, 1987.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Shevelko, Viateheslav P., i V. P. Shevelko. Single and Multiple Ionization of Atoms and Ions by Electron Impact (Physics Reviews). CRC, 1999.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Kiselev, Mikhail, Konstantin Kikoin i Yshai Avishai. Dynamical Symmetries for Nanostructures: Implicit Symmetries in Single-Electron Transport Through Real and Artificial Molecules. Springer Wien, 2011.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Hans, Koch, i Ernest B. Vinberg. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 , ... Series in Electronics and Photonics ). Springer, 2011.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Wolf, E. L. Solar Cell Physics and Technologies. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0010.

Pełny tekst źródła
Streszczenie:
Solar cells are based on semiconductor pn junctions. Absorption of sunlight is optimal at bandgap energies near one electron volt, and greatly increases the reverse current density. The efficiency of the cell is described by the “filling factor”, and is limited, for single junction cells, by the Quiesser–Shockley limit, near 30 percent. Tandem cells, series combinations of cells, absorb a larger portion of the solar spectrum with higher efficiency but with greater complexity and cost. Such cells are used with focusing optics that inherently raises the efficiency, but also the complexity and cost. This is a textbook for physics, chemistry and engineering students interested in the future of energy as impacted by depletion of fossil fuels, and in the effects of fossil fuel burning on climate.
Style APA, Harvard, Vancouver, ISO itp.
9

Tiwari, Sandip. Nanoscale Device Physics. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198759874.001.0001.

Pełny tekst źródła
Streszczenie:
Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the inter-actions, and others. These interactions, with the limits placed on size, make not just electronic, but also magnetic, optical and mechanical behavior interesting, important and useful. Connecting these properties to the behavior of devices is the focus of this textbook. Description of the book series: This collection of four textbooks in the Electroscience series span the undergraduate-to-graduate education in electrosciences for engineering and science students. It culminates in a comprehensive under-standing of nanoscale devices—electronic, magnetic, mechanical and optical in the 4th volume, and builds to it through volumes devoted to underlying semiconductor and solid-state physics with an emphasis on phenomena at surfaces and interfaces, energy interaction, and fluctuations; a volume devoted to the understanding of the variety of devices through classical microelectronic approach, and an engineering-focused understanding of principles of quantum, statistical and information mechanics. The goal is provide, with rigor and comprehensiveness, an exposure to the breadth of knowledge and interconnections therein in this subject area that derives equally from sciences and engineering. By completing this through four integrated texts, it circumvents what is taught ad hoc and incompletely in a larger number of courses, or not taught at all. A four course set makes it possible for the teaching curriculum to be more comprehensive in this and related advancing areas of technology. It ends at a very modern point, where researchers in the subject area would also find the discussion and details an important reference source.
Style APA, Harvard, Vancouver, ISO itp.
10

Morawetz, Klaus. Scattering on a Single Impurity. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.003.0004.

Pełny tekst źródła
Streszczenie:
Evolution of a many-body system consists of permanent collisions among particles. Looking at the motion of a single particle, one can identify encounters by which a particle abruptly changes the direction of flight, these are seen as true collisions, and small-angle encounters, which in sum act as an applied force rather than randomising collisions. The scattering on impurities is used to introduce the mentioned mechanisms and, in particular, to show how they affect each other. Point impurities are assumed, i.e. impurities the potential of which is restricted to a single atomic site of the crystal lattice. In this case interaction potentials never overlap and many-body effects are due to nonlocal character of the quantum particle. To introduce elementary components of the formalism, in this chapter we first describe the interaction of an electron with a single impurity. Lippman–Schwinger equations are derived and the physics behind the collision delay, dissipativeness and optical theorems is explored.
Style APA, Harvard, Vancouver, ISO itp.

Części książek na temat "Single-Electron physics"

1

Gliserin, A., S. Lahme, M. Walbran, F. Krausz i P. Baum. "Ultrafast Single-Electron Diffraction". W Springer Proceedings in Physics, 295–98. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-13242-6_72.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Landi Degl’Innocenti, Egidio. "Atoms with a Single Valence Electron". W UNITEXT for Physics, 119–47. Milano: Springer Milan, 2014. http://dx.doi.org/10.1007/978-88-470-2808-1_6.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

McGurn, Arthur. "Toward Single-Electron Transistors". W An Introduction to Condensed Matter Physics for the Nanosciences, 225–39. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003031987-9.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Grossmann, Frank. "Single Electron Atoms in Strong Laser Fields". W Theoretical Femtosecond Physics, 99–136. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00606-2_4.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Fischetti, Massimo V., i William G. Vandenberghe. "Single-Electron Dynamics in Crystals". W Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 163–83. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Koski, Jonne V., i Jukka P. Pekola. "Quantum Thermodynamics in a Single-Electron Box". W Fundamental Theories of Physics, 897–915. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-99046-0_37.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Shiozawa, Toshiyuki. "Single-Particle Theory of the Free-Electron Laser". W Advanced Texts in Physics, 159–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06261-6_6.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Proulx, Daniel, Zhong-jian Teng i Robin Shakeshaft. "Single and Double Photoionization of Two-Electron Systems". W Super-Intense Laser-Atom Physics, 375–90. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-7963-2_32.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Crowe, Albert, i Igor Bray. "Is Single Electron Excitation in Helium Now Fully Understood?" W Selected Topics on Electron Physics, 45–55. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0421-0_4.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Jiang, H. W., E. Yablonovitch, M. Xiao, M. Sakr, G. Scott i E. T. Croke. "Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures". W Topics in Applied Physics, 81–100. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-79365-6_5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "Single-Electron physics"

1

BARNAS, J., J. MARTINEK, G. MICHALEK i B. R. BULKA. "SINGLE-ELECTRON ELECTRONICS WITH SPIN: FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR". W Proceedings of the Sixth's International School of Theoretical Physics. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811479_0023.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Kawamura, Minoru, Kazuhito Tsukagoshi i Kimitoshi Kono. "Single-Electron Transistor Made from a Single Gold Colloidal Particle". W LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355242.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Stróżecka, Anna, Kaliappan Muthukumar, J. Andreas Larsson, Bert Voigtländer, Beverly Karplus Hartline, Renee K. Horton i Catherine M. Kaicher. "Electron Transport Through Single Fullerene Molecules (abstract)". W WOMEN IN PHYSICS: Third IUPAP International Conference on Women in Physics. AIP, 2009. http://dx.doi.org/10.1063/1.3137886.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Ahmed, H. "Fabrication, physics and applications of single electron devices". W IEE Colloquium on Advanced Developments in Microelectronic Engineering. IEE, 1996. http://dx.doi.org/10.1049/ic:19961240.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Fallahi, P. "Imaging Electrons in a Single-Electron Quantum Dot". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994338.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Brown, K. R. "Controlling and measuring a single donor electron in silicon". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994655.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Schleser, R. "Time resolved single electron detection in a quantum dot". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994336.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Chandrasekhar, V., i R. A. Webb. "Single electron charging effects in insulating wires". W Ordering disorder: Prospect and retrospect in condensed matter physics. AIP, 1992. http://dx.doi.org/10.1063/1.44746.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Schneiderman, J. F., P. Delsing, M. D. Shaw, H. M. Bozler i P. M. Echternach. "Experimental Realization of a Differential Radio-Frequency Single-Electron Transistor". W LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355241.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Ohgi, Taizo, Yukihiro Sakotsubo, Daisuke Fujita i Youiti Ootuka. "Offset Charge Distribution in Nanocluster-Based Single-Electron Tunneling Devices". W LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355243.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Raporty organizacyjne na temat "Single-Electron physics"

1

Tzfira, Tzvi, Michael Elbaum i Sharon Wolf. DNA transfer by Agrobacterium: a cooperative interaction of ssDNA, virulence proteins, and plant host factors. United States Department of Agriculture, grudzień 2005. http://dx.doi.org/10.32747/2005.7695881.bard.

Pełny tekst źródła
Streszczenie:
Agrobacteriumtumefaciensmediates genetic transformation of plants. The possibility of exchanging the natural genes for other DNA has led to Agrobacterium’s emergence as the primary vector for genetic modification of plants. The similarity among eukaryotic mechanisms of nuclear import also suggests use of its active elements as media for non-viral genetic therapy in animals. These considerations motivate the present study of the process that carries DNA of bacterial origin into the host nucleus. The infective pathway of Agrobacterium involves excision of a single-stranded DNA molecule (T-strand) from the bacterial tumor-inducing plasmid. This transferred DNA (T-DNA) travels to the host cell cytoplasm along with two virulence proteins, VirD2 and VirE2, through a specific bacteriumplant channel(s). Little is known about the precise structure and composition of the resulting complex within the host cell and even less is known about the mechanism of its nuclear import and integration into the host cell genome. In the present proposal we combined the expertise of the US and Israeli labs and revealed many of the biophysical and biological properties of the genetic transformation process, thus enhancing our understanding of the processes leading to nuclear import and integration of the Agrobacterium T-DNA. Specifically, we sought to: I. Elucidate the interaction of the T-strand with its chaperones. II. Analyzing the three-dimensional structure of the T-complex and its chaperones in vitro. III. Analyze kinetics of T-complex formation and T-complex nuclear import. During the past three years we accomplished our goals and made the following major discoveries: (1) Resolved the VirE2-ssDNA three-dimensional structure. (2) Characterized VirE2-ssDNA assembly and aggregation, along with regulation by VirE1. (3) Studied VirE2-ssDNA nuclear import by electron tomography. (4) Showed that T-DNA integrates via double-stranded (ds) intermediates. (5) Identified that Arabidopsis Ku80 interacts with dsT-DNA intermediates and is essential for T-DNA integration. (6) Found a role of targeted proteolysis in T-DNA uncoating. Our research provide significant physical, molecular, and structural insights into the Tcomplex structure and composition, the effect of host receptors on its nuclear import, the mechanism of T-DNA nuclear import, proteolysis and integration in host cells. Understanding the mechanical and molecular basis for T-DNA nuclear import and integration is an essential key for the development of new strategies for genetic transformation of recalcitrant plant species. Thus, the knowledge gained in this study can potentially be applied to enhance the transformation process by interfering with key steps of the transformation process (i.e. nuclear import, proteolysis and integration). Finally, in addition to the study of Agrobacterium-host interaction, our research also revealed some fundamental insights into basic cellular mechanisms of nuclear import, targeted proteolysis, protein-DNA interactions and DNA repair.
Style APA, Harvard, Vancouver, ISO itp.
Możesz być także zainteresowany rozszerzonymi bibliografiami na temat „Single-Electron physics” dla poszczególnych typów źródeł:
Artykuły w czasopismach Rozprawy doktorskie
Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!

Do bibliografii