Artykuły w czasopismach: „SIMOX”

1

Hemment, PLF, KJ Reeson, JA Kilner i SJ Krause. "Simox bibliography". Vacuum 42, nr 5-6 (styczeń 1991): 393–453. http://dx.doi.org/10.1016/0042-207x(91)90062-n.

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Scanlon, P. J., P. L. F. Hemment, K. J. Reeson, A. K. Robinson, J. A. Kilner, R. J. Chater i G. Harbeke. "Oxygen rich SIMOX?" Semiconductor Science and Technology 6, nr 8 (1.08.1991): 730–34. http://dx.doi.org/10.1088/0268-1242/6/8/002.

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Margail, J. "SIMOX material manufacturability". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, nr 1-2 (kwiecień 1993): 41–46. http://dx.doi.org/10.1016/0168-583x(93)95011-s.

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Visitserngtrakul, S. "Multiply faulted defects in high-current oxygen-implanted silicon-on-insulator". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6.08.1989): 606–7. http://dx.doi.org/10.1017/s0424820100155001.

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High-dose oxygen implantation into silicon, SIMOX (separation by implantation of oxygen), is a leading technique for producing silicon-on-insulator (SOI) material. Most studies have examined SIMOX prepared with a traditional implanter, which has beam currents of 100 to 400 μA. Since the formation of SIMOX requires a very high dose of oxygen, typically one hundred times larger than the standard dopant implant doses, the process takes many hours. Recently, a high-current implanter has been developed for SIMOX fabrication, which produces a 40 mA beam current. However, the higher current density has not only shortened the implantation time, but also produced features not routinely observed in samples implanted at much lower currents. The study reported here used conventional transmission and high resolution electron microscopy (CTEM,HREM) to characterize microstructure and defects in SIMOX implanted at high currents.

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David Theodore, N., Peter Fejes, Mamoru Tomozane i Ming Liaw. "TEM characterization of SiGe heterolayers grown on SIMOX". Proceedings, annual meeting, Electron Microscopy Society of America 49 (sierpień 1991): 886–87. http://dx.doi.org/10.1017/s0424820100088749.

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SiGe heterolayers are of interest for use in heterojunction transistors, infrared detectors and field-effect transistors. SIMOX (Separation of silicon by IMplanted OXygen) is useful for fabrication of silicon-on-insulator (SOI) structures (electrically isolated from the substrate). SIMOX could potentially be used for isolation of SiGe structures from the substrate. Epitaxial-Si grown on SIMOX (required for some device structures) can have grown-in dislocations that arise due to STMOX-related damage. If SiGe heterolayers were grown on silicon, dislocations could interact with the strain fields associated with the SiGe layers. Such interaction could possibly lead to a reduction in defect densities in upper layers of the structures. In the present study, SiGe heterolayers grown on SIMOX by chemical vapor deposition were characterized using TEM. The structures consisted of epi-silicon grown on a Si/Sii-xGex superlattice which was in turn grown on a Si/SiO2 (SIMOX) structure. The behavior of defects in the structures was of interest.

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6

Xue Li, Ying, Xing Zhang, Yan Luo i Yang Yuan Wang. "Photoluminescence spectroscopy of SIMOX". Journal of Non-Crystalline Solids 254, nr 1-3 (wrzesień 1999): 134–38. http://dx.doi.org/10.1016/s0022-3093(99)00438-x.

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Izumi, Katsutoshi. "History of SIMOX Material". MRS Bulletin 23, nr 12 (grudzień 1998): 20–24. http://dx.doi.org/10.1557/s088376940002978x.

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Watanabe and Tooi first reported on the formation of silicon oxide by oxygenion implantation into silicon in 1966. Further investigations of such oxygen-implanted oxide layers have been carried out by several workers, with the result that the oxide has equivalent isolation characteristics to those for thermally grown silicon oxide. Practical applications of the oxygen-implanted oxide to semiconductor devices have been reported by only a few workers, with a suggestion of their usefulness. Unfortunately Watanabe and Tooi's work has not been followed by additional silicon-on-insulator (SOI) studies.In 1978 Izumi, Doken, and Ariyoshi succeeded in fabricating a complementary-metal-oxide-semiconductor (CMOS) ring oscillator using a buried SiO2 layer formed by oxygenion (16O+) implantation into silicon. They named the new SOI technology “SIMOX,” which is short for separation by implanted oxygen. Since then Izumi and his research group have continued their study of SIMOX technology.

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Barklie, R. C. "Defects in SIMOX Structures". Solid State Phenomena 1-2 (styczeń 1991): 203–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.203.

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Ravindra, N. M., S. Abedrabbo, O. H. Gokce, F. Tong, A. Patel, R. Velagapudi, G. D. Williamson i W. P. Maszara. "Radiative properties of SIMOX". IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, nr 3 (1998): 441–49. http://dx.doi.org/10.1109/95.725208.

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Guerra, M., V. Benveniste, G. Ryding, D. H. Douglas-Hamilton, M. Reed, G. Gagne, A. Armstrong i M. Mack. "Oxygen implanter for simox". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6, nr 1-2 (styczeń 1985): 63–69. http://dx.doi.org/10.1016/0168-583x(85)90611-1.

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Izumi, Katsutoshi. "Historical overview of SIMOX". Vacuum 42, nr 5-6 (styczeń 1991): 333–40. http://dx.doi.org/10.1016/0042-207x(91)90050-s.

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Daniel Chen, CE. "SIMOX devices and circuits". Vacuum 42, nr 5-6 (styczeń 1991): 383–86. http://dx.doi.org/10.1016/0042-207x(91)90058-q.

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13

Van Ommen, A. H. "New trends in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, nr 1-4 (marzec 1989): 194–202. http://dx.doi.org/10.1016/0168-583x(89)90770-2.

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Stoemenos, J. "Structural defects in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 112, nr 1-4 (maj 1996): 206–13. http://dx.doi.org/10.1016/0168-583x(95)01237-0.

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15

Tan, Yan, Benedict Johnson, Supapan Seraphin i Maria J. Anc. "Defect Dynamics in Simox Structures as a Function of the Annealing Parameters". Microscopy and Microanalysis 6, S2 (sierpień 2000): 1086–87. http://dx.doi.org/10.1017/s1431927600037922.

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Advanced semiconductor devices on the SIMOX (Separation by IMplanted OXygen) substrate have many advantages including high-speed, large packing density and low power consumption. SIMOX consists of a layer structure generated by oxygen ion implantation into silicon wafers. The implantation process introduces a high density of defects that can be reduced by post-implantation annealing. Decreasing the oxygen dose not only reduces the cost but also decreases the damage to the top Si layers. Low-dose implantation results in thinner buried oxide (BOX) layer, in contrast to traditional high-dose SIMOX. The BOX layer formation mechanism is different for low-dose SIMOX from that of high-dose. For a high-dose SIMOX, the BOX layer is already formed by implantation. However, for a low-dose, a number of oxide precipitates are formed during implantation. The larger precipitates grow at the expense of smaller ones until they coalesce to the BOX layer during annealing. This step is known as Ostwald ripening, which is responsible for the thin BOX formation.

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Ferro, G., N. Planes, V. Papaioannou, D. Chaussende, Y. Monteil, Y. Stoemenos i J. Camassel. "Role of SIMOX defects on the structural properties of β-SiC/SIMOX". Materials Science and Engineering: B 61-62 (lipiec 1999): 586–92. http://dx.doi.org/10.1016/s0921-5107(98)00480-2.

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Wilson, T., J. Jiao, S. Seraphin, B. Johnson, M. Anc i B. Cordts. "Effects of Protective Capping on Ultra-Thin SIMOX Structures". Microscopy and Microanalysis 5, S2 (sierpień 1999): 744–45. http://dx.doi.org/10.1017/s1431927600017049.

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Devices for character recognition as well as cellular phones require computational elements that work at higher speeds with lower current requirements. Separation by IMplanted Oxygen (SIMOX) is one type of Silicon On Insulator (SOI) technology that shows great promise in meeting the future demands for faster and more efficient applications. The ultra-thin SIMOX substrates produced by low energy/low dose implant methods make possible the construction of large scale integrated circuits with fully depleted CMOS devices. One of the great challenges in the production of SIMOX technology is achieving high quality Si and Si02 layers. High energy implantation of 0+ ions causes damage to the Si crystal and therefore requires a high temperature annealing step to repair it. Annealing of SIMOX takes place in a mixed atmosphere of argon and oxygen. Having oxygen in the ambient creates a superficial Si02 layer. This reduces the thickness of the SOI layer but also protects the surface from pitting.

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18

Weiss, B. L., G. T. Reed, S. K. Toh, R. A. Soref i F. Namavar. "Optical waveguides in SIMOX structures". IEEE Photonics Technology Letters 3, nr 1 (styczeń 1991): 19–21. http://dx.doi.org/10.1109/68.68035.

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19

Nakashima, S., i K. Izumi. "Surface morphology of SIMOX wafers". Electronics Letters 25, nr 2 (1989): 154. http://dx.doi.org/10.1049/el:19890112.

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Geatches, R. M., K. J. Reason, A. J. Griddle, R. P. Webb, P. J. Pearson, P. L. F. Hemment i A. Nejim. "Nondestructive characterization of SIMOX structures". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 84, nr 2 (luty 1994): 258–64. http://dx.doi.org/10.1016/0168-583x(94)95766-5.

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21

Kögler, Reinhard, A. Mücklich, W. Anwand, F. Eichhorn i Wolfgang Skorupa. "Defect Engineering for SIMOX Processing". Solid State Phenomena 131-133 (październik 2007): 339–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.339.

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SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is shown to be a promising technique of defect engineering. The additional He implant does not initiate oxide growth in the top-Si layer of SOI.

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22

Giordana, Adriana, R. Glosser, Keith Joyner i Gordon Pollack. "Photoreflectance Studies of SIMOX Materials". Journal of Electronic Materials 20, nr 11 (listopad 1991): 949–58. http://dx.doi.org/10.1007/bf02816038.

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23

Allen, Lisa P., Theodore H. Smick i Geoffrey Ryding. "SIMOX Research, development, and manufacturing". Journal of Electronic Materials 25, nr 1 (styczeń 1996): 93–97. http://dx.doi.org/10.1007/bf02666180.

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24

Griffin, CJ, i JA Kilner. "The evolution of SIMOX dislocations". Vacuum 42, nr 5-6 (styczeń 1991): 389. http://dx.doi.org/10.1016/0042-207x(91)90060-v.

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25

Steigmeier, E. F., G. Harbeke, K. J. Reeson, P. L. F. Hemment i A. K. Robinson. "Nondestructive assessment of SIMOX substrates". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (luty 1989): 304–7. http://dx.doi.org/10.1016/0168-583x(89)90191-2.

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26

Yoshino, A., K. Kasama i M. Sakamoto. "Oxygen-redistribution process in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, nr 1-4 (marzec 1989): 203–6. http://dx.doi.org/10.1016/0168-583x(89)90771-4.

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27

Lee, June-Dong, Stephen Krause i Peter Roitman. "Formation of stacking-fault tetrahedra in low defect density oxygen-implanted silicon-on-insulator material". Proceedings, annual meeting, Electron Microscopy Society of America 50, nr 2 (sierpień 1992): 1402–3. http://dx.doi.org/10.1017/s0424820100131644.

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Fabrication of integrated circuits on SOI (Silicon-On-Insulator) material is very attractive because it offers high component density, immunity to latch-up and radiation hardness. Among various SOI techniques SIMOX Separation by IMplantation of OXygen) provides the best material, with carrier mobilities and defect densities approaching bulk silicon values, Early SIMOX wafers were implanted at temperatures below 600°C and annealed at high temperature (>1300°C), which gave a high defect density (109cm−2), including threading dislocations and narrow stacking faults (SFs), as shown in Figure 1. Higher temperature (>600°C) implantation of SIMOX reduced defect densities to 106cm-2 with pairs of narrow SFs in the top silicon layer, as shown in Figure 2. This paper describes a further reduction of defect density in SIMOX material through various annealing conditions, which has resulted in a defect density less than 105cm−2. A new formation mechanism for stacking fault tetrahedra is also discussed.Silicon (100) wafers were sequentially implanted (620°C) and annealed (at 1320°C for 5 hours) to doses of 0.5, 0.5, and 0.8×l018cm-2.

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Ohler, M., S. Köhler i J. Härtwig. "X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals". Acta Crystallographica Section A Foundations of Crystallography 55, nr 3 (1.05.1999): 423–32. http://dx.doi.org/10.1107/s0108767398010794.

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X-ray diffraction topographs of wafers produced by separation by implanted oxygen (SIMOX) show moiré fringes in both reflection and transmission geometry. These fringes reveal deformations of the order of 10−6 to 10−8 between the layer and the substrate of the SIMOX material. A new method for a quantitative analysis of moiré fringes is developed and allows reconstruction with a high sensitivity of the three components of the relative displacement field between layer and substrate directly from a set of topographs. This method is used for the interpretation of moiré topographs of entire 4 in SIMOX wafers and of regions around crystal defects. Finally, the capabilities of an analysis of moiré fringes are compared with those of the usual diffraction topography.

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29

Roitman, P., D. S. Simons, Supapan Visitserngtrakul, C. O. Jung i S. J. Krause. "Effect of annealing ambient on the precipitation processes in oxygen-implanted silicon on-insulator material". Proceedings, annual meeting, Electron Microscopy Society of America 48, nr 4 (sierpień 1990): 644–45. http://dx.doi.org/10.1017/s0424820100176356.

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In the last decade, oxygen implanted silicon-on-insulator material (SIMOX: Separation by IMplantation of OXygen) has been extensively studied, due to its potential advantages of increased speed and radiation hardness in integrated circuits. SIMOX material requires two processing steps: first, implantation of a high dose of oxygen to form a buried oxide layer below a thin, top silicon layer; second, a high temperature anneal in an inert gas atmosphere to remove implantation damage and oxide precipitates. Most earlier studies investigated the effect of annealing temperature and time, but did not consider the effect of gas ambient. The effect of nitrogen and argon on the oxide-precipitate formation in bulk silicon has been established. Raider et al. found that in annealing of bulk silicon, nitrogen can diffuse to an oxide-silicon interface and chemically react with silicon. The nitrogen-containing layer acts as a barrier to further oxidation. Consequently, nitrogen influences the growth kinetics of the thermal oxide while annealing in an argon ambient does not. This should apply to SIMOX as well. We have, therefore, investigated the effect of nitrogen and argon ambient on the oxide-precipitate removal during annealing of SIMOX material.

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30

Krause, S. J., C. O. Jung i S. R. Wilson. "Precipitation in silicon-on-insulator material during high- temperature annealing". Proceedings, annual meeting, Electron Microscopy Society of America 45 (sierpień 1987): 254–55. http://dx.doi.org/10.1017/s0424820100126172.

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Silicon-on-insulator (SOI) structure by high dose oxygen implantation (SIMOX) has excellent potential for use in radiation hardened and high speed integrated circuits. Device fabrication in SIMOX requires a high quality superficial Si layer above the buried oxide layer. Previously we reported on the effect of heater temperature, background doping, and annealing cycle on precipitate size, density, and location in the superficial Si layer. Precipitates were not eliminated with our processing conditions, but various authors have recently reported that high temperature annealing of SIMOX, from 1250°C to 1405°C, eliminates virtually all precipitates in the superficial Si layer. However, in those studies there were significant differences in implantation energy and dose and also annealing time and temperature. Here we are reporting on the effect of annealing time and temperature on the formation and changes in precipitates.

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31

Iikawa, H., M. Nakao i K. Izumi. "Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation". Journal of Materials Research 19, nr 12 (1.12.2004): 3607–13. http://dx.doi.org/10.1557/jmr.2004.0455.

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Separation by implemented oxygen (SIMOX)(111) substrates have been formed by oxygen-ion (16O+) implantation into Si(111), showing that a so-called “dose-window” at 16O+-implantation into Si differs from Si(100) to Si(111). In SIMOX(100), an oxygen dose of 4 × 1017/cm2 into Si(100) is widely recognized as the dose-window when the acceleration energy is 180 keV. For the first time, our work shows that an oxygen dose of 5 × 1017/cm2 into Si(111) is the dose-window for the formation of SIMOX(111) substrates when the acceleration energy is 180 keV. The difference between dose-windows is caused by anisotropy of the crystal orientation during growth of the faceted buried SiO2. We also numerically analyzed the data at different oxidation velocities for each facet of the polyhedral SiO2 islands. Numerical analysis results show good agreement with the experimental data.

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32

Nejim, A., P. L. Hemment i J. Stoemenos. "High temperature carbon implantation in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120, nr 1-4 (grudzień 1996): 129–32. http://dx.doi.org/10.1016/s0168-583x(96)00494-6.

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33

Lam, H. W. "SIMOX SOI for integrated circuit fabrication". IEEE Circuits and Devices Magazine 3, nr 4 (lipiec 1987): 6–11. http://dx.doi.org/10.1109/mcd.1987.6323126.

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34

Mayo, Santos, Jeremiah R. Lowney, Peter Roitman i Donald B. Novotny. "Persistent photoconductivity in SIMOX film structures". Journal of Applied Physics 68, nr 7 (październik 1990): 3456–60. http://dx.doi.org/10.1063/1.346356.

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35

Vogt, H., G. Burbach, J. Belz i G. Zimmer. "MESFETs in thin silicon on SIMOX". Electronics Letters 25, nr 23 (1989): 1580. http://dx.doi.org/10.1049/el:19891061.

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Bhar, T. N., R. J. Lambert i H. L. Hughes. "Electron trapping in SI implanted SIMOX". Electronics Letters 34, nr 10 (1998): 1026. http://dx.doi.org/10.1049/el:19980626.

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Nayak, D. K., J. C. S. Woo, G. K. Yabiku, K. P. MacWilliams, J. S. Park i K. L. Wang. "High-mobility GeSi PMOS on SIMOX". IEEE Electron Device Letters 14, nr 11 (listopad 1993): 520–22. http://dx.doi.org/10.1109/55.258002.

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Martin, E., J. Jiménez, A. Pérez-Rodrígues i J. R. Morante. "Raman characterization of SOI-SIMOX structures". Materials Letters 15, nr 1-2 (październik 1992): 122–26. http://dx.doi.org/10.1016/0167-577x(92)90026-g.

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Guerra, M., B. Cordts, T. Smick, R. Dolan, W. Krull, G. Ryding, M. Alles i M. Anc. "Manufacturing technology for 200mm SIMOX Wafers". Microelectronic Engineering 22, nr 1-4 (sierpień 1993): 351–54. http://dx.doi.org/10.1016/0167-9317(93)90185-8.

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Anc, M. J., i W. A. Krull. "Sources of SIMOX buried oxide leakage". Microelectronic Engineering 28, nr 1-4 (czerwiec 1995): 407–10. http://dx.doi.org/10.1016/0167-9317(95)00085-m.

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Colinge, Jean-Pierre. "The development of CMOS/SIMOX technology". Microelectronic Engineering 28, nr 1-4 (czerwiec 1995): 423–30. http://dx.doi.org/10.1016/0167-9317(95)00089-q.

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Jeoung, Jun Sik, Benedict Johnson i Suṗapan Seraphin. "Growth of Oxygen Precipitates in Low-Dose Low-Energy Simox". Microscopy and Microanalysis 7, S2 (sierpień 2001): 562–63. http://dx.doi.org/10.1017/s1431927600028889.

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Silicon-on-insulator (SOI) is becoming a key technology for low power electronics due to substantially reduced power consumption of electronic components, and a capability of compact circuit design which are not readily achievable in bulk silicon technology [1]. Separation by IMplantation of OXygen (SIMOX) is the most promising technology for fabricating SOI material. The basic SIMOX process consists of implantation of oxygen into the single crystalline silicon wafer and the subsequent high temperature annealing. Oxygen implantation at low doses does not form a continuous buried oxide (BOX) layer but leads to an inhomogeneous distribution of the oxygen precipitates during implantation process. The formation and growth of oxygen precipitates in low-dose SIMOX depend strongly on the implantation conditions such as oxygen dose, implantation temperature, annealing temperature and ramping rate [2,3]. During the subsequent annealing, Ostwald ripening of the precipitates takes place and the larger precipitates grow at the expanse of small ones until they coalesce to the buried oxide layer.

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Chen, Meng, Yuehui Yu, Xi Wang, Xiang Wang, Jing Chen, Xianghua Liu i Yeming Dong. "Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match". Journal of Materials Research 17, nr 7 (lipiec 2002): 1634–43. http://dx.doi.org/10.1557/jmr.2002.0241.

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In this article, we report formation of separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) materials with doses ranging from (2.5 to 13.5) × 1017 cm−2 at acceleration energies of 70–160 keV and subsequent annealing at temperatures over 1300 °C in oxygen + argon atmosphere for 5 h. The microstructure evolution of SIMOX wafers was characterized by Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy, Secco, and Cu-plating. This study revealed a series of good matches of dose-energy combination at acceleration energies of 70–160 keV with doses of (2.5–5.5) × 1017 cm−2, in which SIMOX wafers had good crystallinity of the top silicon, sharp Si/SiO2 interfaces, high-integrity buried oxide layers with low pinhole density, and low detectable silicon islands. Furthermore, the higher the oxygen dose, the higher the implanted energy required for the formation of a buried oxide free from Si islands. The mechanism of the optimum dose-energy match is discussed.

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Guss, B., S. Seraphin i B. F. Cordts. "TEM Analysis of Defects in Simox Silicon-On-Insulator Material". Microscopy and Microanalysis 3, S2 (sierpień 1997): 473–74. http://dx.doi.org/10.1017/s1431927600009259.

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Silicon-on-Insulator is the leading technology for VLSI fast speed processors and low voltage applications. SIMOX (Separation by Implantation of Oxygen) is a subset of SOI with a high quality top silicon layer onto which VLSI circuitry is placed. SIMOX processing begins with a high energy, high current implantation of a large dose of O+ ions to penetrate the wafer’s surface to form the buried oxide and top silicon layers. This implantation creates numerous precipitates and a large damage region. Therefore a multi-step anneal is used to improve the quality of the top silicon layer by significantly reducing precipitate and dislocation densities, to create smooth interfaces, and to remove any ion residual damage. Using TEM, this study traces the defect formations through the various processing steps, with the objective to arrive at device quality.The SIMOX wafers were implanted with an oxygen ion implant dose of 5xl017cm−2, and then subjected to multiple implantation and anneal steps, bringing the final oxygen ion dose to 1.5xl018cm−2[1].

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Krause, Steve, Maria Anc i Peter Roitman. "Evolution and Future Trends of SIMOX Material". MRS Bulletin 23, nr 12 (grudzień 1998): 25–29. http://dx.doi.org/10.1557/s0883769400029791.

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Oxygen-implanted silicon-on-insulator (SOI) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry. Building integrated circuits (ICs) in a thin layer of crystalline silicon on a layer of silicon oxide on a silicon substrate has benefits for radiationhard, high-temperature, high-speed, low-voltage, and low-power operation, and for future device designs. Historically the first interest in SIMOX was for radiation-hard electronics for space, but the major application of interest currently is low-power, high-speed, portable electronics. Silicon-on-insulator also avoids the disadvantage of a completely different substrate such as sapphire or gallium arsenide. Formation of a buried-oxide (BOX) layer by high-energy, high-dose, oxygen ion implantation has the advantage that the ion-implant dose can be made extremely precise and extremely uniform. However the silicon and oxide layers are highly damaged after the implant, so high-temperature annealing sequences are required to restore devicequality material. In fact SIMOX process development necessitated the development of new technologies for high-dose implantation and high-temperature annealing.

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Miyatake, Hiroshi, Yasuo Yamaguchi, Yoji Mashiko, Tadashi Nishimura i Hiroshi Koyama. "Microstructure of high temperature annealed SIMOX wafer". Applied Surface Science 41-42 (styczeń 1990): 643–46. http://dx.doi.org/10.1016/0169-4332(89)90136-0.

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Rivera, A., A. van Veen, H. Schut, J. M. M. de Nijs i P. Balk. "Interaction of deuterium with SIMOX buried oxide". Microelectronic Engineering 59, nr 1-4 (listopad 2001): 497–501. http://dx.doi.org/10.1016/s0167-9317(01)00664-5.

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Liu, S. T., i L. P. Allen. "Back channel uniformity of thin SIMOX wafers". IEEE Transactions on Nuclear Science 38, nr 6 (1991): 1271–75. http://dx.doi.org/10.1109/23.124104.

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Jung-Hyeon Park, Hyung-Il Lee, Heung-Sik Tae, Jeung-Soo Huh i Jung-Hee Lee. "Lateral field emission diodes using SIMOX wafer". IEEE Transactions on Electron Devices 44, nr 6 (czerwiec 1997): 1018–21. http://dx.doi.org/10.1109/16.585560.

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Douseki, T., S. Shigematsu, J. Yamada, M. Harada, H. Inokawa i T. Tsuchiya. "A 0.5-V MTCMOS/SIMOX logic gate". IEEE Journal of Solid-State Circuits 32, nr 10 (1997): 1604–9. http://dx.doi.org/10.1109/4.634672.

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