Gotowe bibliografie tematyczne / SIMOX

Gotowa bibliografia na temat „SIMOX”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 19 lutego 2022

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Artykuły w czasopismach na temat "SIMOX"

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Hemment, PLF, KJ Reeson, JA Kilner i SJ Krause. "Simox bibliography". Vacuum 42, nr 5-6 (styczeń 1991): 393–453. http://dx.doi.org/10.1016/0042-207x(91)90062-n.

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Scanlon, P. J., P. L. F. Hemment, K. J. Reeson, A. K. Robinson, J. A. Kilner, R. J. Chater i G. Harbeke. "Oxygen rich SIMOX?" Semiconductor Science and Technology 6, nr 8 (1.08.1991): 730–34. http://dx.doi.org/10.1088/0268-1242/6/8/002.

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Margail, J. "SIMOX material manufacturability". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, nr 1-2 (kwiecień 1993): 41–46. http://dx.doi.org/10.1016/0168-583x(93)95011-s.

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Visitserngtrakul, S. "Multiply faulted defects in high-current oxygen-implanted silicon-on-insulator". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6.08.1989): 606–7. http://dx.doi.org/10.1017/s0424820100155001.

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High-dose oxygen implantation into silicon, SIMOX (separation by implantation of oxygen), is a leading technique for producing silicon-on-insulator (SOI) material. Most studies have examined SIMOX prepared with a traditional implanter, which has beam currents of 100 to 400 μA. Since the formation of SIMOX requires a very high dose of oxygen, typically one hundred times larger than the standard dopant implant doses, the process takes many hours. Recently, a high-current implanter has been developed for SIMOX fabrication, which produces a 40 mA beam current. However, the higher current density has not only shortened the implantation time, but also produced features not routinely observed in samples implanted at much lower currents. The study reported here used conventional transmission and high resolution electron microscopy (CTEM,HREM) to characterize microstructure and defects in SIMOX implanted at high currents.
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David Theodore, N., Peter Fejes, Mamoru Tomozane i Ming Liaw. "TEM characterization of SiGe heterolayers grown on SIMOX". Proceedings, annual meeting, Electron Microscopy Society of America 49 (sierpień 1991): 886–87. http://dx.doi.org/10.1017/s0424820100088749.

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SiGe heterolayers are of interest for use in heterojunction transistors, infrared detectors and field-effect transistors. SIMOX (Separation of silicon by IMplanted OXygen) is useful for fabrication of silicon-on-insulator (SOI) structures (electrically isolated from the substrate). SIMOX could potentially be used for isolation of SiGe structures from the substrate. Epitaxial-Si grown on SIMOX (required for some device structures) can have grown-in dislocations that arise due to STMOX-related damage. If SiGe heterolayers were grown on silicon, dislocations could interact with the strain fields associated with the SiGe layers. Such interaction could possibly lead to a reduction in defect densities in upper layers of the structures. In the present study, SiGe heterolayers grown on SIMOX by chemical vapor deposition were characterized using TEM. The structures consisted of epi-silicon grown on a Si/Sii-xGex superlattice which was in turn grown on a Si/SiO2 (SIMOX) structure. The behavior of defects in the structures was of interest.
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Xue Li, Ying, Xing Zhang, Yan Luo i Yang Yuan Wang. "Photoluminescence spectroscopy of SIMOX". Journal of Non-Crystalline Solids 254, nr 1-3 (wrzesień 1999): 134–38. http://dx.doi.org/10.1016/s0022-3093(99)00438-x.

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Izumi, Katsutoshi. "History of SIMOX Material". MRS Bulletin 23, nr 12 (grudzień 1998): 20–24. http://dx.doi.org/10.1557/s088376940002978x.

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Watanabe and Tooi first reported on the formation of silicon oxide by oxygenion implantation into silicon in 1966. Further investigations of such oxygen-implanted oxide layers have been carried out by several workers, with the result that the oxide has equivalent isolation characteristics to those for thermally grown silicon oxide. Practical applications of the oxygen-implanted oxide to semiconductor devices have been reported by only a few workers, with a suggestion of their usefulness. Unfortunately Watanabe and Tooi's work has not been followed by additional silicon-on-insulator (SOI) studies.In 1978 Izumi, Doken, and Ariyoshi succeeded in fabricating a complementary-metal-oxide-semiconductor (CMOS) ring oscillator using a buried SiO2 layer formed by oxygenion (16O+) implantation into silicon. They named the new SOI technology “SIMOX,” which is short for separation by implanted oxygen. Since then Izumi and his research group have continued their study of SIMOX technology.
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Barklie, R. C. "Defects in SIMOX Structures". Solid State Phenomena 1-2 (styczeń 1991): 203–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.203.

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Ravindra, N. M., S. Abedrabbo, O. H. Gokce, F. Tong, A. Patel, R. Velagapudi, G. D. Williamson i W. P. Maszara. "Radiative properties of SIMOX". IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, nr 3 (1998): 441–49. http://dx.doi.org/10.1109/95.725208.

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Guerra, M., V. Benveniste, G. Ryding, D. H. Douglas-Hamilton, M. Reed, G. Gagne, A. Armstrong i M. Mack. "Oxygen implanter for simox". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6, nr 1-2 (styczeń 1985): 63–69. http://dx.doi.org/10.1016/0168-583x(85)90611-1.

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Rozprawy doktorskie na temat "SIMOX"

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Yang, Hong. "Microstructural development of simox and simox related materials". Thesis, University of North Texas, 1993. https://digital.library.unt.edu/ark:/67531/metadc798205/.

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A novel structure related to Seperation by Implanted Oxygen (SIMOX) of NiSi2/SiO2/Si is studied for two primary reasons: the importance of metal silicide and insulating oxide in IC devices and the difficulty of direct growth of crystalline silicide on amorphous substrates.
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Krska, Jee-Hoon Yap. "SIMOX buried-oxide conduction mechanisms". Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10309.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
Includes bibliographical references (leaves 141-149).
by Jee-Hoon Yap Krska.
Ph.D.
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Dalponte, Mateus. "Junções rasas em Si e SIMOX". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/7638.

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Foi estudado o comportamento do As (dopante tipo n) em dois tipos diferentes de substratos de Si: bulk e SIMOX (Separation by IMplanted OXygen). Ambos os substratos receberam uma implantação de 5x1014 cm-2 de As+ com energia de 20 keV. Após as implantações, as amostras foram recozidas por um dos dois processos a seguir: recozimento rápido (RTA, Rapid Thermal Annealing) ou convencional (FA, Furnace Annealing). A caracterização física e elétrica foi feita através do uso de diversas técnicas: SIMS (Secondary Ion Mass Spectrometry), RBS (Rutherford Backscattering Spectrometry), MEIS (Medium Energy Ion Scattering), medidas de resistência de folha, medidas Hall e medidas de perfil de portadores por oxidação anódica. Na comparação entre os substratos SIMOX e Si bulk, os resultados indicaram que o SIMOX se mostrou superior ao Si bulk em todos os aspectos, ou seja, menor concentração de defeitos e menor perda de dopantes para a atmosfera após os recozimentos, maior concentração de portadores e menor resistência de folha. A substitucionalidade do As foi maior no SIMOX após RTA, mas semelhante nos dois substratos após FA. Na comparação entre RTA e FA, o primeiro método se mostrou mais eficiente em todos os aspectos mencionados acima. As explicações para o comportamento observado foram atribuídas à presença de maior concentração de vacâncias no SIMOX do que no Si bulk e à interação destas vacâncias com os dopantes.
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Oliveira, Roana Melina de. "Dopagem tipo-n em estruturas SIMOX". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2007. http://hdl.handle.net/10183/11793.

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Foram estudadas a ativação elétrica e a redistribuição de As (dopante tipo n) implantado em SIMOX (Separation by IMplanted OXygen). Estruturas SIMOX com diferentes espessuras da camada superficial de Si e do óxido enterrado foram usadas. As implantações de As+ foram feitas com a energia de 20 keV e doses de 5x1014cm-2 ou 2x1015cm-2. Um perfil em forma de platô foi implantado em algumas amostras por implantação com tripla energia. Recozimentos térmicos rápidos e convencionais foram aplicados para a ativação dos dopantes e cobertura dos danos de implantação. A caracterização física e elétrica foi feita através de RBS (Rutherford Backscattering Spectrometry), TEM (Transmission Electron Microscopy), MEIS (Medium Energy Ion Scattering) e medidas elétricas por efeito Hall. Os resultados são discutidos considerando a profundidade de amorfização alcançada pela implantação de dopantes e a cobertura dos danos após recozimentos e sua influência na ativação elétrica dos dopantes.As amostras completamente amorfizadas apresentaram maiores valores de resistência de folha e menor percentagem de ativação dos dopantes em comparação com as amostras que não tiveram a completa amorfização do filme de Si. Os resultados mostram claramente a necessidade de evitar a amorfização total do filme de Si em SIMOX durante a implantação iônica, possibilitando a formação de uma boa estrutura cristalina com boas características elétricas após o recozimento.
The re-crystallization and electrical activation of As (n-type dopant) implanted in SIMOX (Separation by IMplanted OXygen) were studied. Two SIMOX structures with different Si overlayers and buried oxide thicknesses were used. The As+ implantations were performed with energy of 20 keV to doses of 5x1014cm-2 or 2x1015cm-2 in both substrates. A plateau-like profile was achieved in an additional set of SOI samples by triple energy implantation. Rapid thermal and conventional furnace annealing were applied for dopant activation and recovery of the implantation damage. The physical and electrical characterizations were done by RBS (Rutherford Backscattering Spectrometry), TEM (Transmission Electron Microscopy), MEIS (Medium Energy Ion Scattering), sheet resistance measurements and Hall Effect measurements. The results are discussed considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment and the influence in the electrical activation of the dopants. The completely amorphized samples presented higher values of sheet resistance and lower electrical activation percentage compared with the samples that did not have the complete top Si film amorphized. These results clearly show the need for avoiding total amorphization of the Si film during ion implantation in SIMOX, so that it is possible to achieve good crystal and electrical characteristics after thermal processing.
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Yoon, Jung Uk 1971. "SIMOX BOX metrology : using physical and electrical characterization". Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32682.

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Lourenco, Manon d'Assuncao. "Evaluation of SIMOX substrates using photoconductive frequency resolved spectroscopy". Thesis, University of Surrey, 1991. http://epubs.surrey.ac.uk/776189/.

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Yoon, Jung Uk 1971. "Metrology of SIMOX buried oxide and nitride/STI CMP". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50518.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
Includes bibliographical references (leaves 149-154).
The increase in demand for faster and more powerful microprocessors in recent years has been the driving force to introduce new materials and processes into semiconductor fabrication facilities. As each fabrication facility tries to maximize its yield, it is mandatory that there exist metrology techniques to characterize both materials and processes. This mandate is the motivation behind this thesis. In this thesis, the metrology of two different systems used in VLSI technology are investigated. The first system is the material, Separation by IMplanted OXygen (SIMOX) buried oxide. SIMOX technology has been studied extensively as a viable alternative to bulk silicon technology in radiation-hard and low-power applications. However, there is still a lack of knowledge on the nature of the defects present in the SIMOX buried oxide and their impact on basic BOX electrical characteristics, such as BOX high-field conduction. In this thesis, greater understanding about the excess-silicon related defects in the buried oxide has been obtained concerning their nature, origin, and impact on the conduction characteristics. Further understanding about the silicon islands in the buried oxide has also been obtained concerning their formation and impact on the high-field conduction characteristics. Finally, a metrological application of the BOX high-field conduction model is demonstrated. The second system is the process, Nitride/Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP). CMP processes have been heralded as a way to planarize films and structures on wafers to a degree which has not been possible before. However, recent studies have shown that the uniformity of CMP processes depends on the layout-pattern density. To address this issue, an oxide CMP model has been developed to show the relationship between layout-pattern density and the polish rate. However, there is an uncertainty as to how this single-material system model can be extended to other material systems and dual-materials systems. In this thesis, the metrology and modeling techniques for oxide CMP are extended to nitride CMP in order to understand the pattern-density and materials dependence for this particular CMP process. In addition, the planarization and uniformity of the two-material system for STI structures is investigated. A model explaining the relationship between a particular STI layout-pattern density and the resulting planarization is developed.
by Jung Uk Yoon.
Ph.D.
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Jeoung, Jun Sik. "Structural and electrical characterization of low-dose low-energy SIMOX materials". Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/280614.

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The effects of implantation dose, energy, and annealing conditions on the microstructure and the formation and evolution of defects in the low-dose, low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy, scanning electron microscopy (SEM), optical microscopy secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectrometry (RBS). The quality of top Si layer and buried oxide layer (BOX) was also characterized with the electrical measurements. From the structural characterization of 100 keV implanted samples, it was found that the optimum dose window to form a continuous BOX layer after annealing was 3.0 to 3.5 x 10¹⁷ O⁺/cm². In addition, the formation mechanisms of dislocations and stacking faults in SIMOX materials were also proposed. The Hg-based pseudo-MOSFET technique was a very effective in-situ technique to evaluate the electrical quality of low-dose low-energy SIMOX. Based on the comparisons of device parameters of low-dose low-energy SIMOX and commercial SIMOX samples, we found that the quality of top Si layer of SIMOX sample prepared at 100 keV with a dose of 3.5 x 10¹⁷ O⁺/cm² was excellent. However, the interface properties (interfacial trap density) needed to be improved. The dielectric quality of low-dose low-energy SIMOX evaluated by breakdown voltage measurements showed a strong dependency on the microstructure of samples.
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Seifouri, Mahmood. "Devices for integrated optics produced in GaAs/GaAlAs anf Simox materials". Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327938.

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Ngwa, Chrisantus Soh. "Electrical characterisation of SIMOX SiO←2 for silicon-on-insulator technology". Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263706.

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Książki na temat "SIMOX"

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Patel, Monica. Novel simox/soi device structure with body contact for reduction of floating body effects. Ottawa: National Library of Canada, 1990.

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Sand, George. Simon. Paris: Honoré Champion éditeur, 2010.

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Sand, George. Simon. Grenoble: Aurore, 1991.

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Hanson, Fred. Simon. Fond du Lac, Wis: Black Willow Press, 1990.

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1993-, Bourget Maxime, red. Simon. Varennes, Québec: AdA, 2010.

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Seivers, Edna Wallace. Simcox. [Knoxville, Tenn: E.W. Seivers, 1989.

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Sutcliff, Rosemary. Simon. s.l: O. U. P, 1996.

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Scott, Hampton, Klein Todd i Chuckry Chris, red. Simon Dark: What Simon does. New York: DC Comics, 2008.

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Winchester, Simon. Simon Winchester's Calcutta /Simon & Rupert Winchester. Footscray, Vic: Lonely Planet, 2004.

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Starling, Simon. Simon Starling. Redaktorzy Kirkpatrick Gail, Henatsch Martin, Städtische Ausstellungshalle am Hawerkamp i Villa Arson (France). Münster: Städtische Ausstellungshalle am Hawerkamp, 2004.

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Części książek na temat "SIMOX"

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Anc, Maria J. "Perspectives of Simox Technology". W Progress in SOI Structures and Devices Operating at Extreme Conditions, 1–10. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0339-1_1.

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Kögler, R., A. Mücklich, W. Anwand, F. Eichhorn i Wolfgang Skorupa. "Defect Engineering for SIMOX Processing". W Solid State Phenomena, 339–44. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-43-4.339.

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Cristoloveanu, Sorin, i Thierry Ouisse. "Properties of Simox and Related Systems". W The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, 309–18. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_33.

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Auberton-Hervé, A. J., B. Aspar i J. L. Pelloie. "Low dose SIMOX for ULSI applications". W Physical and Technical Problems of SOI Structures and Devices, 3–14. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0109-7_1.

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Cristoloveanu, Sorin. "Electrical Properties of Simox Material and Devices". W The Physics and Technology of Amorphous SiO2, 517–30. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_63.

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Stesmans, A., i G. Van Gorp. "Low-Temperature ESR Study of SIMOX Structures". W The Physics and Technology of Amorphous SiO2, 539–45. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_65.

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Lysenko, V. S., I. P. Tyagulski, I. N. Osiyuk i Y. V. Gomeniuk. "Cryogenic Investigations of SIMOX Buried Oxide Parameters". W Progress in SOI Structures and Devices Operating at Extreme Conditions, 159–66. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0339-1_11.

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Elewa, T., H. Haddara i S. Cristoloveanu. "Interface Properties and Recombination Mechanisms in Simox Structures". W The Physics and Technology of Amorphous SiO2, 553–59. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_67.

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Voronin, G. G., L. V. Degtyarenko, I. G. Lukitsa, V. G. Malinin, V. V. Starkov, Y. V. Fedorovitch i L. N. Frolov. "Fabrication of SIMOX Structures and IC’s Test Elements". W Physical and Technical Problems of SOI Structures and Devices, 241–46. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0109-7_21.

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Nejim, Ahmed, i P. L. F. Hemment. "Preparation and Characterisation of Thin Film Simox Material". W Crucial Issues in Semiconductor Materials and Processing Technologies, 225–32. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_22.

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Streszczenia konferencji na temat "SIMOX"

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deSouza, J. P., S. W. Bedell, H. J. Hovel, K. Fogel, A. Reznicek i D. K. Sadana. "Single Wafer sSOI by SIMOX". W 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246532.

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Lam, Hon W. "Epitaxial Growth On SIMOX Wafers". W O-E/LASE'86 Symp (January 1986, Los Angeles), redaktorzy Devindra K. Sadana i Michael I. Current. SPIE, 1986. http://dx.doi.org/10.1117/12.961207.

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Douseki, Takakuni, i Junzo Yamada. "Sub 1-V MTCMOS/SIMOX Circuit Technology". W 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.b-7-2.

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Clark, Stewart A., Brian Culshaw, Emma J. Dawnay i Ian E. Day. "Thermo-optic phase modulators in SIMOX material". W Symposium on Integrated Optoelectronics, redaktorzy Giancarlo C. Righini i Seppo Honkanen. SPIE, 2000. http://dx.doi.org/10.1117/12.379940.

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Nayak, Park, Woo, Wang, Yabiku i MacWilliams. "High performance GeSi quantum-well PMOS on SIMOX". W Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307473.

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Wen, Huashun, David Borlaug, Hongxiang Wang, Yuefeng Ji i Bahram Jalali. "Engineering Strain in Silicon Using SIMOX 3D Sculpting". W CLEO: Science and Innovations. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/cleo_si.2016.sm2r.5.

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Zhang, Xing, Liqiong Wei, Yingxue Li i Yangyuan Wang. "High Speed Fully Depleted CMOS/SIMOX Gate Array". W 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.ld-16.

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INO, Masayuki, Toshiaki TSUCHIYA, Ken TAKEYA i Tetsushi SAKAI. "LSI Applications of 0.25-μm CMOS/SIMOX Technology". W 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.sympo.i-9.

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Yakovlev, Victor A., Sylvie Bosch-Charpenay, Peter A. Rosenthal, Peter R. Solomon i Jiazhan Xu. "FTIR reflectance characterization of SIMOX buried oxide layers". W SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, redaktorzy Raju V. Datla i Leonard M. Hanssen. SPIE, 1998. http://dx.doi.org/10.1117/12.326654.

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IMAI, Masato, Tatsuhiko KATAYAMA i Jaroslaw JABLONSKI. "The Status and Future of Low-Dose SIMOX Technology". W 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.s-iii-6.

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Raporty organizacyjne na temat "SIMOX"

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Marshall, J. C., M. W. Cresswell, C. H. Ellenwood, L. W. Linholm, P. Roitman i M. E. Zaghloul. The design guide for CMOS-on-SIMOX test chips NIST3 and NIST4. Gaithersburg, MD: National Institute of Standards and Technology, 1993. http://dx.doi.org/10.6028/nist.ir.4889.

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Marshall, J. C., M. W. Cresswell, C. H. Ellenwool, L. W. Linholm, P. Roitman i M. E. Zaghloul. The test guide for CMOS-ON-SIMOX test chips NIST3 and NIST4. Gaithersburg, MD: National Institute of Standards and Technology, 1993. http://dx.doi.org/10.6028/nist.ir.4890.

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Thoren, Roxi, i Andrew Louw. Simon and Helen Director Park. Landscape Architecture Foundation, 2013. http://dx.doi.org/10.31353/cs0630.

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Harpring, L. J. SIMON Host Computer System requirements and recommendations. Office of Scientific and Technical Information (OSTI), listopad 1990. http://dx.doi.org/10.2172/10130242.

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Harpring, L. J. SIMON Host Computer System requirements and recommendations. Office of Scientific and Technical Information (OSTI), listopad 1990. http://dx.doi.org/10.2172/5654697.

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Fogel, Robert. Simon S. Kuznets: April 30, 1901-July 9, 1985. Cambridge, MA: National Bureau of Economic Research, lipiec 2000. http://dx.doi.org/10.3386/w7787.

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Fogel, Robert. Some Notes on the Scientific Methods of Simon Kuznets. Cambridge, MA: National Bureau of Economic Research, grudzień 1987. http://dx.doi.org/10.3386/w2461.

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Carpenter, Terry L., Bruce J. Bernacky i Eric E. Stabell. Human Envenomization by Plectreurys tristis Simon (Araneae: Plectreuridae): A Case Report. Fort Belvoir, VA: Defense Technical Information Center, lipiec 1990. http://dx.doi.org/10.21236/ada225092.

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Berry, David A., i Tim Fogarty. Abstract - Cooperative Research and Development Agreement between SIOX and National Energy Technology Laboratory. Office of Scientific and Technical Information (OSTI), marzec 2018. http://dx.doi.org/10.2172/1433182.

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David G. Morse i Hannes E. Leetaru. RESERVOIR CHARACTERIZATION & 3D MODELS OF MT. SIMON GAS STORAGE FIELDS IN THE ILLINOIS BASIN. Office of Scientific and Technical Information (OSTI), wrzesień 2003. http://dx.doi.org/10.2172/825371.

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