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Artykuły w czasopismach na temat "Silicon solar cells – Materials"
Knobloch, J., i A. Eyer. "Crystalline Silicon Materials and Solar Cells". Materials Science Forum 173-174 (wrzesień 1994): 297–310. http://dx.doi.org/10.4028/www.scientific.net/msf.173-174.297.
Pełny tekst źródłaGuha, Subhendu. "Materials aspects of amorphous silicon solar cells". Current Opinion in Solid State and Materials Science 2, nr 4 (sierpień 1997): 425–29. http://dx.doi.org/10.1016/s1359-0286(97)80083-6.
Pełny tekst źródłaWenham, S. R., i M. A. Green. "Silicon solar cells". Progress in Photovoltaics: Research and Applications 4, nr 1 (styczeń 1996): 3–33. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<3::aid-pip117>3.0.co;2-s.
Pełny tekst źródłaRath, J. K. "Nanocystalline silicon solar cells". Applied Physics A 96, nr 1 (23.12.2008): 145–52. http://dx.doi.org/10.1007/s00339-008-5017-x.
Pełny tekst źródłaWang, Ying Lian, i Jun Yao Ye. "Review and Development of Crystalline Silicon Solar Cell with Intelligent Materials". Advanced Materials Research 321 (sierpień 2011): 196–99. http://dx.doi.org/10.4028/www.scientific.net/amr.321.196.
Pełny tekst źródłaLiang, Z. C., D. M. Chen, X. Q. Liang, Z. J. Yang, H. Shen i J. Shi. "Crystalline Si solar cells based on solar grade silicon materials". Renewable Energy 35, nr 10 (październik 2010): 2297–300. http://dx.doi.org/10.1016/j.renene.2010.02.027.
Pełny tekst źródłaJia, Yi, Jinquan Wei, Kunlin Wang, Anyuan Cao, Qinke Shu, Xuchun Gui, Yanqiu Zhu i in. "Nanotube-Silicon Heterojunction Solar Cells". Advanced Materials 20, nr 23 (2.12.2008): 4594–98. http://dx.doi.org/10.1002/adma.200801810.
Pełny tekst źródłaWon, Rachel. "Graphene–silicon solar cells". Nature Photonics 4, nr 7 (lipiec 2010): 411. http://dx.doi.org/10.1038/nphoton.2010.140.
Pełny tekst źródłaGoswami, Romyani. "Three Generations of Solar Cells". Advanced Materials Research 1165 (23.07.2021): 113–30. http://dx.doi.org/10.4028/www.scientific.net/amr.1165.113.
Pełny tekst źródłaCho, Eun-Chel, Sangwook Park, Xiaojing Hao, Dengyuan Song, Gavin Conibeer, Sang-Cheol Park i Martin A. Green. "Silicon quantum dot/crystalline silicon solar cells". Nanotechnology 19, nr 24 (9.05.2008): 245201. http://dx.doi.org/10.1088/0957-4484/19/24/245201.
Pełny tekst źródłaRozprawy doktorskie na temat "Silicon solar cells – Materials"
Søiland, Anne Karin. "Silicon for Solar Cells". Doctoral thesis, Norwegian University of Science and Technology, Department of Materials Technology, 2005. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-565.
Pełny tekst źródłaThis thesis work consists of two parts, each with a different motivation. Part II is the main part and was partly conducted in industry, at ScanWafer ASA’s plant no.2 in Glomfjord.
The large growth in the Photo Voltaic industry necessitates a dedicated feedstock for this industry, a socalled Solar Grade (SoG) feedstock, since the currently used feedstock rejects from the electronic industry can not cover the demand. Part I of this work was motivated by this urge for a SoG- feedstock. It was a cooperation with the Sintef Materials and Chemistry group, where the aim was to study the kinetics of the removal reactions for dissolved carbon and boron in a silicon melt by oxidative gas treatment. The main focus was on carbon, since boron may be removed by other means. A plasma arc was employed in combination with inductive heating. The project was, however, closed after only two experiments. The main observations from these two experiments were a significant boron removal, and the formation of a silica layer on the melt surface when the oxygen content in the gas was increased from 2 to 4 vol%. This silica layer inhibited further reactions.
Multi-crystalline (mc) silicon produced by directional solidification constitutes a large part of the solar cell market today. Other techniques are emerging/developing and to keep its position in the market it is important to stay competitive. Therefore increasing the knowledge on the material produced is necessary. Gaining knowledge also on phenomenas occurring during the crystallisation process can give a better process control.
Part II of this work was motivated by the industry reporting high inclusion contents in certain areas of the material. The aim of the work was to increase the knowledge of inclusion formation in this system. The experimental work was divided into three different parts;
1) Inclusion study
2) Extraction of melt samples during crystallisation, these were to be analysed for carbon- and nitrogen. Giving thus information of the contents in the liquid phase during soldification.
3) Fourier Transform Infrared Spectroscopy (FTIR)-measurements of the substitutional carbon contents in wafers taken from similar height positions as the melt samples. Giving thus information of the dissolved carbon content in the solid phase.
The inclusion study showed that the large inclusions found in this material are β-SiC and β-Si3N4. They appear in particularly high quantities in the top-cuts. The nitrides grow into larger networks, while the carbide particles tend to grow on the nitrides. The latter seem to act as nucleating centers for carbide precipitation. The main part of inclusions in the topcuts lie in the size range from 100- 1000 µm in diameter when measured by the Coulter laser diffraction method.
A method for sampling of the melt during crystallisation under reduced pressure was developed, giving thus the possibility of indicating the bulk concentration in the melt of carbon and nitrogen. The initial carbon concentration was measured to ~30 and 40 ppm mass when recycled material was employed in the charge and ~ 20 ppm mass when no recycled material was added. Since the melt temperature at this initial stage is ~1500 °C these carbon levels are below the solubility limit. The carbon profiles increase with increasing fraction solidified. For two profiles there is a tendency of decreasing contents at high fraction solidified.
For nitrogen the initial contents were 10, 12 and 44 ppm mass. The nitrogen contents tend to decrease with increasing fraction solidified. The surface temperature also decreases with increasing fraction solidified. Indicating that the melt is saturated with nitrogen already at the initial stage. The proposed mechanism of formation is by dissolution of coating particles, giving a saturated melt, where β-Si3N4 precipitates when cooling. Supporting this mechanism are the findings of smaller nitride particles at low fraction solidified, that the precipitated phase are β-particles, and the decreasing nitrogen contents with increasing fraction solidified.
The carbon profile for the solid phase goes through a maximum value appearing at a fraction solidified from 0.4 to 0.7. The profiles flatten out after the peak and attains a value of ~ 8 ppma. This drop in carbon content is associated with a precipitation of silicon carbide. It is suggested that the precipitation of silicon carbide occurs after a build-up of carbon in the solute boundary layer.
FTIR-measurements for substitutional carbon and interstitial oxygen were initiated at the institute as a part of the work. A round robin test was conducted, with the Energy Research Centre of the Netherlands (ECN) and the University of Milano-Bicocci (UniMiB) as the participants. The measurements were controlled against Secondary Ion Mass Spectrometer analyses. For oxygen the results showed a good correspondence between the FTIR-measurements and the SIMS. For carbon the SIMS-measurements were significantly lower than the FTIR-measurements. This is probably due to the low resistivity of the samples (~1 Ω cm), giving free carrier absorption and an overestimation of the carbon content.
Li, Dai-Yin. "Texturization of multicrystalline silicon solar cells". Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/64615.
Pełny tekst źródłaCataloged from PDF version of thesis.
Includes bibliographical references (p. 103-111).
A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create a honeycomb texture. Two distinct approaches for surface texturization were studied. The first approach was photo-defined etching. For this approach, the research focus was to take advantage of Vall6ra's technique published in 1999, which demonstrated a high-contrast surface texture on p-type silicon created by photo-suppressed etching. Further theoretical consideration, however, led to a conclusion that diffusion of bromine in the electrolyte impacts the resolution achievable with Vallera's technique. Also, diffusion of photocarriers may impose an additional limitation on the resolution. The second approach studied was based on soft lithography. For this approach, a texturization process sequence that created a honeycomb texture with 20 ptm spacing on polished wafers at low cost and high throughput was developed. Novel techniques were incorporated in the process sequence, including surface wettability patterning by microfluidic lithography and selective condensation based on Raoult's law. Microfluidic lithography was used to create a wettability pattern from a 100A oxide layer, and selective condensation based on Raoult's law was used to reliably increase the thickness of the glycerol/water liquid film entrained on hydrophilic oxide islands approximately from 0.2 pm to 2.5 pm . However, there remain several areas that require further development to make the process sequence truly successful, especially when applied to multicrystalline wafers.
by Dai-Yin Li.
Ph.D.
Echeverria, Molina Maria Ines. "Crack Analysis in Silicon Solar Cells". Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4311.
Pełny tekst źródłaPeters, Stefan. "Rapid thermal processing of crystalline silicon materials and solar cells /". Allensbach : UFO Atelier für Gestaltung und Verlag, 2004. http://www.loc.gov/catdir/toc/fy0805/2007493330.html.
Pełny tekst źródłaSheng, Xing Ph D. Massachusetts Institute of Technology. "Thin-film silicon solar cells : photonic design, process and fundamentals". Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/105936.
Pełny tekst źródłaThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 153-159).
The photovoltaic technology has been attracting widespread attention because of its effective energy harvest by directly converting solar energy into electricity. Thin-film silicon solar cells are believed to be a promising candidate for further scaled-up production and cost reduction while maintaining the advantages of bulk silicon. The efficiency of thin-film Si solar cells critically depends on optical absorption in the silicon layer since silicon has low absorption coefficient in the red and near-infrared (IR) wavelength ranges due to its indirect bandgap nature. This thesis aims at understanding, designing, and fabricating novel photonic structures for efficiency enhancement in thin-film Si solar cells. We have explored a previously reported a photonic crystal (PC) based structure to improve light absorption in thin-film Si solar cells. The PC structure combines a dielectric grating layer and a distributed Bragg reflector (DBR) for effcient light scattering and reflection, increasing light path length in the thin-film cell. We have understood the operation principles for this design by using photonic band theories and electromagnetic wave simulations. we discover that this DBR with gratings exhibit unusual light trapping in a way different from metal reflectors and photonic crystals. The light trapping effects for the DBR with and without reflector are numerically investigated. The self-assembled anodic aluminum oxide (AAO) technique is introduced to non- lithographically fabricate the grating structure. We adjust the AAO structural parameters by using different anodization voltages, times and electrolytes. Two-step anodization is employed to obtain nearly hexagonal AAO pattern. The interpore periods of the fabricated AAO are calculated by fast Fourier transform (FFT) analysis. We have also demonstrated the fabrication of ordered patterns made of other materials like amorphous Si (a-Si) and silver by using the AAO membrane as a deposition mask. Numerical simulations predict that the fabricated AAO pattern exhibits light trapping performance comparable to the perfectly periodic grating layer. We have implemented the light trapping concepts combining the self-assembled AAO layer and the DBR in the backside of crystalline Si wafers. Photoconductivity measurements suggest that the light absorption is improved in the near-IR spectral range near the band edge of Si. Furthermore, different types of thin-film Si solar cells, including a-Si, mi- crocrystalline Si ([mu]-Si) and micromorph Si solar cells, are investigated. For demonstration, the designed structure is integrated into a 1:5 [mu]m thick [mu]c-Si solar cell. We use numerical simulations to obtain the optimal structure parameters for the grating and the DBR, and then we fabricate the optimized structures using the AAO membrane as a template. The prototype devices integrating our proposed backside structure yield a 21% improvement in efficiency. This is further verified by quantum efficiency measurements, which clearly indicate stronger light absorption in the red and near-IR spectral ranges. Lastly, we have explored the fundamental light trapping limits for thin-film Si solar cells in the wave optics regime. We develop a deterministic method to optimize periodic textures for light trapping. Deep and high-index-contrast textures exhibit strong anisotropic scattering that is outside the regime of validity of the Lambertian models commonly used to describe texture-induced absorption enhancement for normal incidence. In the weak ab- sorption regime, our optimized surface texture in two dimensions (2D) enhances absorption by a factor of 2.7[pi]n, considerably larger than the classical [pi]n Lambertian result and exceeding by almost 50% a recent generalization of Lambertian model for periodic structures in finite spectral range. Since the [pi]n Lambertian limit still applies for isotropic incident light, our optimization methodology can be thought of optimizing the angle/enhancement tradeoff for periodic textures. Based on a modified Shockley-Queisser theory, we conclude that it is possible to achieve more than 20% efficiency in a 1:5 [mu]m thick crystalline Si cell if advanced light trapping schemes can be realized.
by Xing Sheng.
Ph. D.
Prönneke, Liv [Verfasser], i Jürgen [Akademischer Betreuer] Werner. "Fluorescent materials for silicon solar cells / Liv Prönneke. Betreuer: Jürgen Werner". Stuttgart : Universitätsbibliothek der Universität Stuttgart, 2012. http://d-nb.info/102604359X/34.
Pełny tekst źródłaCastellanos, Rodriguez Sergio. "Electrical impact assessment of dislocations in silicon materials for solar cells". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101529.
Pełny tekst źródłaCataloged from PDF version of thesis.
Includes bibliographical references (pages 117-133).
Cast multicrystalline silicon (mc-Si) makes up about 60% of the global photovoltaics market production, and is favored due to its lower areal and capex costs relative to monocrystalline silicon. This method, however, produces material with a higher density of defects (e.g., dislocations, grain boundaries, metal impurities) than more expensive single-crystalline growth methods. A higher density of defects, particularly dislocations, results in a greater density of charge-carrier recombination centers, which reduce a solar cell's efficiency. Interestingly, the recombination activity of individual dislocations and dislocation clusters can vary by orders of magnitude, even within the same device and a separation of only by millimeters of distance. In this thesis, I combine a surface-analysis approach with bulk characterization techniques to explore the underlying root cause of variations in recombination activity between different dislocation clusters. I propose and validate an optical inspection routine based on dislocations' surface characteristics to predict their recombination activity, and extend this methodology to novel growth processes. Lastly, I explore a spatial dispersion metric to assess its potential as a descriptor for the electrical recombination activity of clusters in silicon. This work provides tools to crystal growers and solar cell manufacturers that facilitate the evaluation of electrical performance at early stages of the cell processing, enabling them to reduce the time required for cycles of learning to improve crystal growth processes.
by Sergio Castellanos-Rodríguez.
Ph. D.
Chalfoun, Lynn Louise. "Process optimization of alloyed aluminum backside contacts for silicon solar cells". Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10996.
Pełny tekst źródłaKang, Moon Hee. "Development of high-efficiency silicon solar cells and modeling the impact of system parameters on levelized cost of electricity". Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47647.
Pełny tekst źródłaKwapil, Wolfram [Verfasser]. "Alternative materials for crystalline silicon solar cells : risks and implications / Wolfram Kwapil". Konstanz : Bibliothek der Universität Konstanz, 2010. http://d-nb.info/1017235988/34.
Pełny tekst źródłaKsiążki na temat "Silicon solar cells – Materials"
Fahrner, Wolfgang Rainer. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.
Znajdź pełny tekst źródłaPizzini, Sergio. Advanced silicon materials for photovoltaic applications. Hoboken, NJ: John Wiley & Sons, 2012.
Znajdź pełny tekst źródłaPeters, Stefan. Rapid thermal processing of crystalline silicon materials and solar cells. Allensbach: UFO Atelier für Gestaltung und Verlag, 2004.
Znajdź pełny tekst źródłaWilfried G. J. H. M. Sark. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.
Znajdź pełny tekst źródłaSchropp, Ruud E. I. Amorphous and microcrystalline silicon solar cells: Modeling, materials, and device technology. Boston: Kluwer Academic, 1998.
Znajdź pełny tekst źródłaSchropp, Ruud E. I., i Miro Zeman. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5631-2.
Pełny tekst źródłaL, Stafford B., i Sabisky E, red. Stability of amorphous silicon alloy materials and devices, Palo Alto, CA, 1987. New York: American Institute of Physics, 1987.
Znajdź pełny tekst źródłaMenno N van den Donker. Plasma deposition of microcrystalline silicon solar cells: Looking beyond the glass. Jülich: Forschungszentrum Jülich GmbH, Zentralbibliothek, 2006.
Znajdź pełny tekst źródłaFlückiger, Roger Sylvain. Microcrystalline silicon thin films deposited by VHF plasmas for solar cell applications. Konstanz: Hartung-Gorre Verlag, 1995.
Znajdź pełny tekst źródłaHüpkes, Jürgen. Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2006.
Znajdź pełny tekst źródłaCzęści książek na temat "Silicon solar cells – Materials"
Green, Martin A. "Developments in Crystalline Silicon Solar Cells". W Solar Cell Materials, 65–84. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118695784.ch4.
Pełny tekst źródłaSchropp, R. E. I. "Amorphous and Microcrystalline Silicon Solar Cells". W Solar Cell Materials, 85–111. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118695784.ch5.
Pełny tekst źródłaChatterjee, Soumyo, Uttiya Dasgupta i Amlan J. Pal. "Solar Cells: Materials Beyond Silicon". W Energy Engineering, 73–85. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-3102-1_8.
Pełny tekst źródłaUshasree, P. M., i B. Bora. "CHAPTER 1. Silicon Solar Cells". W Solar Energy Capture Materials, 1–55. Cambridge: Royal Society of Chemistry, 2019. http://dx.doi.org/10.1039/9781788013512-00001.
Pełny tekst źródłaRath, J. K. "Thin-Film Silicon Solar Cells". W Advanced Silicon Materials for Photovoltaic Applications, 311–53. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781118312193.ch9.
Pełny tekst źródłaPutra, Ilham Ramadhan, Pawan Kumar Singh i Chia-Yun Chen. "Silicon-Nanowire-Based Hybrid Solar Cells". W Green Energy Materials Handbook, 235–51. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, [2019]: CRC Press, 2019. http://dx.doi.org/10.1201/9780429466281-12.
Pełny tekst źródłaNarayanan, Mohan, i Ted Ciszek. "Silicon Solar Cells: Materials, Devices, and Manufacturing". W Springer Handbook of Crystal Growth, 1701–18. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_51.
Pełny tekst źródłaSchropp, Ruud E. I., i Miro Zeman. "Technology of Solar Cells". W Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology, 69–97. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5631-2_4.
Pełny tekst źródłaShih, Yu-Chou, i Frank G. Shi. "Silicon Solar Cell Metallization Pastes". W Materials for Advanced Packaging, 855–77. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_20.
Pełny tekst źródłaKuwano, Y., i S. Tsuda. "Amorphous Silicon Solar Cells Using a-SiC Materials". W Amorphous and Crystalline Silicon Carbide and Related Materials, 167–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_25.
Pełny tekst źródłaStreszczenia konferencji na temat "Silicon solar cells – Materials"
Bhat, P. K., D. S. Shen i R. E. Hollingsworth. "Stability of amorphous silicon solar cells". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41008.
Pełny tekst źródłaLeComber, P. G. "Stability of a-Si:H materials and solar cells-closing remarks". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41010.
Pełny tekst źródłaBrandt, Martin S., i Martin Stutzmann. "Investigation of the Staebler-Wronski effect in a-Si:H by spin-dependent photoconductivity". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41015.
Pełny tekst źródłaRedfield, David, i Richard H. Bube. "The rehybridized two-site (RTS) model for defects in a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41016.
Pełny tekst źródłaHata, N., i S. Wagner. "The application of a comprehensive defect model to the stability of a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41017.
Pełny tekst źródłaMcMahon, T. J. "Defect equilibration in device quality a-Si:H and its relation to light-induced defects". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41018.
Pełny tekst źródłaCohen, J. David, i Thomas M. Leen. "Investigation of defect reactions involved in metastability of hydrogenated amorphous silicon". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41019.
Pełny tekst źródłaStreet, R. A. "Metastability and the hydrogen distribution in a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41031.
Pełny tekst źródłaBennett, M., i K. Rajan. "Thermal annealing of photodegraded a-SiGe:H solar cells". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41007.
Pełny tekst źródłaFuhs, W., H. Branz, W. Jackson, D. Redfield, B. Street i M. Stutzmann. "Panel on metastability modeling". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41009.
Pełny tekst źródłaRaporty organizacyjne na temat "Silicon solar cells – Materials"
Sopori, B. L. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings. Office of Scientific and Technical Information (OSTI), sierpień 2007. http://dx.doi.org/10.2172/913592.
Pełny tekst źródłaSchiff, E. A., Q. Gu, L. Jiang, J. Lyou, I. Nurdjaja i P. Rao. Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998. Office of Scientific and Technical Information (OSTI), grudzień 1998. http://dx.doi.org/10.2172/6707.
Pełny tekst źródłaSchiff, E. A., Q. Gu, L. Jiang i P. Rao. Research on high-bandgap materials and amorphous silicon-based solar cells. Annual technical report, 15 May 1995--15 May 1996. Office of Scientific and Technical Information (OSTI), styczeń 1997. http://dx.doi.org/10.2172/434452.
Pełny tekst źródłaSchiff, E. A., Q. Gu, L. Jiang i Q. Wang. Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995. Office of Scientific and Technical Information (OSTI), grudzień 1995. http://dx.doi.org/10.2172/176787.
Pełny tekst źródłaWilliamson, D. L. Structure of Silicon-Based Thin Film Solar Cell Materials: Annual Technical Progress Report, 1 April 2002--31 August 2003. Office of Scientific and Technical Information (OSTI), styczeń 2004. http://dx.doi.org/10.2172/15006546.
Pełny tekst źródłaSopori, B. L. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers, August 11-14, 2002, Breckenridge, Colorado. Office of Scientific and Technical Information (OSTI), sierpień 2002. http://dx.doi.org/10.2172/15006541.
Pełny tekst źródłaWilliamson, D. L. Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual subcontract report, 6 April 1994--5 April 1995. Office of Scientific and Technical Information (OSTI), sierpień 1995. http://dx.doi.org/10.2172/104959.
Pełny tekst źródłaWilliamson, D. L. Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual technical report, April 6, 1995--April 5, 1996. Office of Scientific and Technical Information (OSTI), sierpień 1996. http://dx.doi.org/10.2172/285505.
Pełny tekst źródłaWilliamson, D. L. Microstructure of Amorphous-Silicon-Based Solar Cell Materials by Small-Angle X-Ray Scattering; Final Subcontract Report: 6 April 1994 - 30 June 1998. Office of Scientific and Technical Information (OSTI), grudzień 1998. http://dx.doi.org/10.2172/14403.
Pełny tekst źródłaHall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, J. Cotter, T. Hughes-Lampros, J. A. Rand, T. R. Ruffins i A. M. Barnett. Thin silicon solar cells. Office of Scientific and Technical Information (OSTI), grudzień 1992. http://dx.doi.org/10.2172/10121623.
Pełny tekst źródła