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Artykuły w czasopismach na temat "Silicon solar cells"
Vlaskin, V. I. "Nanocrystalline silicon carbide films for solar cells". Semiconductor Physics Quantum Electronics and Optoelectronics 19, nr 3 (30.09.2016): 273–78. http://dx.doi.org/10.15407/spqeo19.03.273.
Pełny tekst źródłaWagner, P. "Silicon solar cells". Microelectronics Journal 19, nr 4 (lipiec 1988): 37–50. http://dx.doi.org/10.1016/s0026-2692(88)80043-0.
Pełny tekst źródłaWenham, S. R., i M. A. Green. "Silicon solar cells". Progress in Photovoltaics: Research and Applications 4, nr 1 (styczeń 1996): 3–33. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<3::aid-pip117>3.0.co;2-s.
Pełny tekst źródłaKorkishko, R. M. "Analysis of features of recombination mechanisms in silicon solar cells". Semiconductor Physics Quantum Electronics and Optoelectronics 17, nr 1 (31.03.2014): 14–20. http://dx.doi.org/10.15407/spqeo17.01.014.
Pełny tekst źródłaTsakalakos, L., J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima i J. Rand. "Silicon nanowire solar cells". Applied Physics Letters 91, nr 23 (3.12.2007): 233117. http://dx.doi.org/10.1063/1.2821113.
Pełny tekst źródłaHill, R. "Amorphous Silicon Solar Cells". Electronics and Power 32, nr 9 (1986): 680. http://dx.doi.org/10.1049/ep.1986.0402.
Pełny tekst źródłaGalloni, Roberto. "Amorphous silicon solar cells". Renewable Energy 8, nr 1-4 (maj 1996): 400–404. http://dx.doi.org/10.1016/0960-1481(96)88886-0.
Pełny tekst źródłaBlakers, A. W., i T. Armour. "Flexible silicon solar cells". Solar Energy Materials and Solar Cells 93, nr 8 (sierpień 2009): 1440–43. http://dx.doi.org/10.1016/j.solmat.2009.03.016.
Pełny tekst źródłaWon, Rachel. "Graphene–silicon solar cells". Nature Photonics 4, nr 7 (lipiec 2010): 411. http://dx.doi.org/10.1038/nphoton.2010.140.
Pełny tekst źródłaCarlson, D. E. "Amorphous-silicon solar cells". IEEE Transactions on Electron Devices 36, nr 12 (1989): 2775–80. http://dx.doi.org/10.1109/16.40936.
Pełny tekst źródłaRozprawy doktorskie na temat "Silicon solar cells"
Søiland, Anne Karin. "Silicon for Solar Cells". Doctoral thesis, Norwegian University of Science and Technology, Department of Materials Technology, 2005. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-565.
Pełny tekst źródłaThis thesis work consists of two parts, each with a different motivation. Part II is the main part and was partly conducted in industry, at ScanWafer ASA’s plant no.2 in Glomfjord.
The large growth in the Photo Voltaic industry necessitates a dedicated feedstock for this industry, a socalled Solar Grade (SoG) feedstock, since the currently used feedstock rejects from the electronic industry can not cover the demand. Part I of this work was motivated by this urge for a SoG- feedstock. It was a cooperation with the Sintef Materials and Chemistry group, where the aim was to study the kinetics of the removal reactions for dissolved carbon and boron in a silicon melt by oxidative gas treatment. The main focus was on carbon, since boron may be removed by other means. A plasma arc was employed in combination with inductive heating. The project was, however, closed after only two experiments. The main observations from these two experiments were a significant boron removal, and the formation of a silica layer on the melt surface when the oxygen content in the gas was increased from 2 to 4 vol%. This silica layer inhibited further reactions.
Multi-crystalline (mc) silicon produced by directional solidification constitutes a large part of the solar cell market today. Other techniques are emerging/developing and to keep its position in the market it is important to stay competitive. Therefore increasing the knowledge on the material produced is necessary. Gaining knowledge also on phenomenas occurring during the crystallisation process can give a better process control.
Part II of this work was motivated by the industry reporting high inclusion contents in certain areas of the material. The aim of the work was to increase the knowledge of inclusion formation in this system. The experimental work was divided into three different parts;
1) Inclusion study
2) Extraction of melt samples during crystallisation, these were to be analysed for carbon- and nitrogen. Giving thus information of the contents in the liquid phase during soldification.
3) Fourier Transform Infrared Spectroscopy (FTIR)-measurements of the substitutional carbon contents in wafers taken from similar height positions as the melt samples. Giving thus information of the dissolved carbon content in the solid phase.
The inclusion study showed that the large inclusions found in this material are β-SiC and β-Si3N4. They appear in particularly high quantities in the top-cuts. The nitrides grow into larger networks, while the carbide particles tend to grow on the nitrides. The latter seem to act as nucleating centers for carbide precipitation. The main part of inclusions in the topcuts lie in the size range from 100- 1000 µm in diameter when measured by the Coulter laser diffraction method.
A method for sampling of the melt during crystallisation under reduced pressure was developed, giving thus the possibility of indicating the bulk concentration in the melt of carbon and nitrogen. The initial carbon concentration was measured to ~30 and 40 ppm mass when recycled material was employed in the charge and ~ 20 ppm mass when no recycled material was added. Since the melt temperature at this initial stage is ~1500 °C these carbon levels are below the solubility limit. The carbon profiles increase with increasing fraction solidified. For two profiles there is a tendency of decreasing contents at high fraction solidified.
For nitrogen the initial contents were 10, 12 and 44 ppm mass. The nitrogen contents tend to decrease with increasing fraction solidified. The surface temperature also decreases with increasing fraction solidified. Indicating that the melt is saturated with nitrogen already at the initial stage. The proposed mechanism of formation is by dissolution of coating particles, giving a saturated melt, where β-Si3N4 precipitates when cooling. Supporting this mechanism are the findings of smaller nitride particles at low fraction solidified, that the precipitated phase are β-particles, and the decreasing nitrogen contents with increasing fraction solidified.
The carbon profile for the solid phase goes through a maximum value appearing at a fraction solidified from 0.4 to 0.7. The profiles flatten out after the peak and attains a value of ~ 8 ppma. This drop in carbon content is associated with a precipitation of silicon carbide. It is suggested that the precipitation of silicon carbide occurs after a build-up of carbon in the solute boundary layer.
FTIR-measurements for substitutional carbon and interstitial oxygen were initiated at the institute as a part of the work. A round robin test was conducted, with the Energy Research Centre of the Netherlands (ECN) and the University of Milano-Bicocci (UniMiB) as the participants. The measurements were controlled against Secondary Ion Mass Spectrometer analyses. For oxygen the results showed a good correspondence between the FTIR-measurements and the SIMS. For carbon the SIMS-measurements were significantly lower than the FTIR-measurements. This is probably due to the low resistivity of the samples (~1 Ω cm), giving free carrier absorption and an overestimation of the carbon content.
Tarabsheh, Anas al. "Amorphous silicon based solar cells". kostenfrei, 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.
Pełny tekst źródłaAl, Tarabsheh Anas. "Amorphous silicon based solar cells". [S.l. : s.n.], 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.
Pełny tekst źródłaBett, Alexander Jürgen [Verfasser], i Stefan [Akademischer Betreuer] Glunz. "Perovskite silicon tandem solar cells : : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells". Freiburg : Universität, 2020. http://d-nb.info/1214179703/34.
Pełny tekst źródłaSchultz, Oliver. "High-efficiency multicrystalline silicon solar cells". München Verl. Dr. Hut, 2005. http://deposit.d-nb.de/cgi-bin/dokserv?idn=977880567.
Pełny tekst źródłaEcheverria, Molina Maria Ines. "Crack Analysis in Silicon Solar Cells". Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4311.
Pełny tekst źródłaLi, Dai-Yin. "Texturization of multicrystalline silicon solar cells". Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/64615.
Pełny tekst źródłaCataloged from PDF version of thesis.
Includes bibliographical references (p. 103-111).
A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create a honeycomb texture. Two distinct approaches for surface texturization were studied. The first approach was photo-defined etching. For this approach, the research focus was to take advantage of Vall6ra's technique published in 1999, which demonstrated a high-contrast surface texture on p-type silicon created by photo-suppressed etching. Further theoretical consideration, however, led to a conclusion that diffusion of bromine in the electrolyte impacts the resolution achievable with Vallera's technique. Also, diffusion of photocarriers may impose an additional limitation on the resolution. The second approach studied was based on soft lithography. For this approach, a texturization process sequence that created a honeycomb texture with 20 ptm spacing on polished wafers at low cost and high throughput was developed. Novel techniques were incorporated in the process sequence, including surface wettability patterning by microfluidic lithography and selective condensation based on Raoult's law. Microfluidic lithography was used to create a wettability pattern from a 100A oxide layer, and selective condensation based on Raoult's law was used to reliably increase the thickness of the glycerol/water liquid film entrained on hydrophilic oxide islands approximately from 0.2 pm to 2.5 pm . However, there remain several areas that require further development to make the process sequence truly successful, especially when applied to multicrystalline wafers.
by Dai-Yin Li.
Ph.D.
Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells". Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.
Pełny tekst źródłaZhu, Mingxuan. "Silicon nanowires for hybrid solar cells". Ecole centrale de Marseille, 2013. http://tel.archives-ouvertes.fr/docs/00/94/57/87/PDF/The_manuscript-4.pdf.
Pełny tekst źródłaForster, Maxime. "Compensation engineering for silicon solar cells". Phd thesis, INSA de Lyon, 2012. http://hdl.handle.net/1885/156020.
Pełny tekst źródłaKsiążki na temat "Silicon solar cells"
Zaidi, Saleem Hussain. Crystalline Silicon Solar Cells. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-73379-7.
Pełny tekst źródłaGoetzberger, Adolf, Joachim Knobloch i Bernhard Voß. Crystalline Silicon Solar Cells. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.
Pełny tekst źródłaTakahashi, K. Amorphous silicon solar cells. London: North Oxford Academic, 1986.
Znajdź pełny tekst źródłaCrystalline silicon solar cells. Chichester: Wiley, 1998.
Znajdź pełny tekst źródłaHann, Geoff. Amorphous silicon solar cells. East Perth, W.A: Minerals and Energy Research Institute of Western Australia, 1997.
Znajdź pełny tekst źródłaAmorphous silicon solar cells. New York: Wiley, 1986.
Znajdź pełny tekst źródłaFahrner, Wolfgang Rainer, red. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37039-7.
Pełny tekst źródłaFahrner, Wolfgang Rainer. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.
Znajdź pełny tekst źródłaIkhmayies, Shadia, red. Advances in Silicon Solar Cells. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1.
Pełny tekst źródłaA, Green Martin, red. High efficiency silicon solar cells. Aedermannsdorf, Switzerland: Trans Tech SA, 1987.
Znajdź pełny tekst źródłaCzęści książek na temat "Silicon solar cells"
Zweibel, Ken. "Silicon Cells". W Harnessing Solar Power, 101–11. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_6.
Pełny tekst źródłaZweibel, Ken. "Silicon Cells". W Harnessing Solar Power, 113–27. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_7.
Pełny tekst źródłaMartinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois i in. "Silicon Solar Cells silicon solar cell , Crystalline". W Solar Energy, 226–69. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_461.
Pełny tekst źródłaMartinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois i in. "Silicon Solar Cells silicon solar cell , Crystalline". W Encyclopedia of Sustainability Science and Technology, 9196–240. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_461.
Pełny tekst źródłaMertens, R. "Crystalline Silicon Solar Cells". W Semiconductor Silicon, 339–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-74723-6_27.
Pełny tekst źródłaWronski, Christopher R., i Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film". W Solar Energy, 270–322. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_462.
Pełny tekst źródłaGoetzberger, Adolf, Joachim Knobloch i Bernhard Voß. "Solar Power". W Crystalline Silicon Solar Cells, 5–7. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.ch2.
Pełny tekst źródłaWronski, Christopher R., i Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film". W Encyclopedia of Sustainability Science and Technology, 9240–92. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_462.
Pełny tekst źródłaCai, Boyuan, i Baohua Jia. "Nanophotonics silicon solar cells". W Silicon Nanomaterials Sourcebook, 485–98. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-24.
Pełny tekst źródłaZhang, Chunfu, Jincheng Zhang, Xiaohua Ma i Qian Feng. "Crystalline Silicon Solar Cells". W Semiconductor Photovoltaic Cells, 65–126. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9480-9_3.
Pełny tekst źródłaStreszczenia konferencji na temat "Silicon solar cells"
Bhat, P. K., D. S. Shen i R. E. Hollingsworth. "Stability of amorphous silicon solar cells". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41008.
Pełny tekst źródłaLuderer, Christoph, Henning Nagel, Frank Feldmann, Jan Christoph Goldschmidt, Martin Bivour i Martin Hermle. "PERC-like Si bottom solar cells for industrial perovskite-Si tandem solar cells". W SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0097026.
Pełny tekst źródłaBrandt, Martin S., i Martin Stutzmann. "Investigation of the Staebler-Wronski effect in a-Si:H by spin-dependent photoconductivity". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41015.
Pełny tekst źródłaRedfield, David, i Richard H. Bube. "The rehybridized two-site (RTS) model for defects in a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41016.
Pełny tekst źródłaHata, N., i S. Wagner. "The application of a comprehensive defect model to the stability of a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41017.
Pełny tekst źródłaMcMahon, T. J. "Defect equilibration in device quality a-Si:H and its relation to light-induced defects". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41018.
Pełny tekst źródłaCohen, J. David, i Thomas M. Leen. "Investigation of defect reactions involved in metastability of hydrogenated amorphous silicon". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41019.
Pełny tekst źródłaStreet, R. A. "Metastability and the hydrogen distribution in a-Si:H". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41031.
Pełny tekst źródłaBennett, M., i K. Rajan. "Thermal annealing of photodegraded a-SiGe:H solar cells". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41007.
Pełny tekst źródłaFuhs, W., H. Branz, W. Jackson, D. Redfield, B. Street i M. Stutzmann. "Panel on metastability modeling". W Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41009.
Pełny tekst źródłaRaporty organizacyjne na temat "Silicon solar cells"
Hall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, J. Cotter, T. Hughes-Lampros, J. A. Rand, T. R. Ruffins i A. M. Barnett. Thin silicon solar cells. Office of Scientific and Technical Information (OSTI), grudzień 1992. http://dx.doi.org/10.2172/10121623.
Pełny tekst źródłaSinton, R. A., A. Cuevas, R. R. King i R. M. Swanson. High-efficiency concentrator silicon solar cells. Office of Scientific and Technical Information (OSTI), listopad 1990. http://dx.doi.org/10.2172/6343818.
Pełny tekst źródłaMcGehee, Michael. Perovskite on Silicon Tandem Solar Cells. Office of Scientific and Technical Information (OSTI), marzec 2021. http://dx.doi.org/10.2172/1830219.
Pełny tekst źródłaBlack, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), październik 2014. http://dx.doi.org/10.2172/1163091.
Pełny tekst źródłaBlack, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), październik 2014. http://dx.doi.org/10.2172/1163251.
Pełny tekst źródłaHaney, R. E., A. Neugroschel, K. Misiakos i F. A. Lindholm. Frequency-domain transient analysis of silicon solar cells. Office of Scientific and Technical Information (OSTI), marzec 1989. http://dx.doi.org/10.2172/6346849.
Pełny tekst źródłaRohatgi, A., A. W. Smith i J. Salami. Modelling and fabrication of high-efficiency silicon solar cells. Office of Scientific and Technical Information (OSTI), październik 1991. http://dx.doi.org/10.2172/10104501.
Pełny tekst źródłaHall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, S. M. Lampo, J. A. Rand, T. R. Ruffins i A. M. Barnett. Silicon-film{trademark} on ceramic solar cells. Final report. Office of Scientific and Technical Information (OSTI), luty 1993. http://dx.doi.org/10.2172/10135001.
Pełny tekst źródłaRand, J. A., A. M. Barnett i J. C. Checchi. Large-area Silicon-Film{trademark} panels and solar cells. Office of Scientific and Technical Information (OSTI), styczeń 1997. http://dx.doi.org/10.2172/453487.
Pełny tekst źródłaAlbright, C. E., i D. O. Holte. Diffusion welding of electrical interconnects to silicon solar cells. Office of Scientific and Technical Information (OSTI), maj 1989. http://dx.doi.org/10.2172/6300204.
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