Gotowe bibliografie tematyczne / Silicon Single Junction Solar Cells

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Gotowa bibliografia na temat „Silicon Single Junction Solar Cells”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Silicon Single Junction Solar Cells"

Xu, Juan, Kailiang Zhang, Yujie Yuan, Xinhua Geng, Fang Wang i Yinping Miao. "Hydrogenated Microcrystalling Silicon Single-Junction NIP Solar Cells". ECS Transactions 44, nr 1 (15.12.2019): 1263–68. http://dx.doi.org/10.1149/1.3694457.

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Hänni, Simon, Grégory Bugnon, Gaetano Parascandolo, Mathieu Boccard, Jordi Escarré, Matthieu Despeisse, Fanny Meillaud i Christophe Ballif. "High-efficiency microcrystalline silicon single-junction solar cells". Progress in Photovoltaics: Research and Applications 21, nr 5 (24.05.2013): 821–26. http://dx.doi.org/10.1002/pip.2398.

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Söderström, Karin, Grégory Bugnon, Franz-Josef Haug i Christophe Ballif. "Electrically flat/optically rough substrates for efficiencies above 10% in n-i-p thin-film silicon solar cells". MRS Proceedings 1426 (2012): 39–44. http://dx.doi.org/10.1557/opl.2012.835.

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ABSTRACTSubstrates with extremely low roughness to allow the growth of good-quality silicon material but that nevertheless present high light trapping properties are presented. In a first application, silver reflectors are used in single and tandem-junction amorphous silicon (a-Si:H) solar cells. High initial (stable) efficiencies of 10.4 % (8.1 %) for single-junction a-Si:H cells on glass and 11.1 % (9.2 %) for tandem-junction a-Si:H/a-Si:H cells on plastic are obtained. A second application better suited to multi-junction solar cells based on microcrystalline silicon (μc-Si:H) solar cells is presented: the substrate consists of rough zinc oxide (ZnO) grown on a flat silver reflector which is covered with a-Si:H; polishing of this structure yields an a-Si:H/ZnO interface that provides high light scattering even though the cell is deposited on a flat interface. We present results of ∼ 4-μm-thick μc-Si:H solar cells prepared on such substrates with high open-circuit voltages of 520 mV. A large relative efficiency gain of 20% is observed compared to a co-deposited cell grown directly on an optimized textured substrate.

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Zhang, Xiaodan, Bofei Liu, Lisha Bai, Fang jia, Shuo Wang, Qian Huang, Jian Ni i in. "Advanced Functional Materials: Intrinsic and Doped Silicon Oxide". MRS Proceedings 1771 (2015): 3–8. http://dx.doi.org/10.1557/opl.2015.391.

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ABSTRACTThe unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.

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Krügener, J., M. Rienäcker, S. Schäfer, M. Sanchez, S. Wolter, R. Brendel, S. John, H. J. Osten i R. Peibst. "Photonic crystals for highly efficient silicon single junction solar cells". Solar Energy Materials and Solar Cells 233 (grudzień 2021): 111337. http://dx.doi.org/10.1016/j.solmat.2021.111337.

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Isabella, O., S. Solntsev, D. Caratelli i M. Zeman. "3-D optical modeling of single and multi-junction thin-film silicon solar cells on gratings". MRS Proceedings 1426 (2012): 149–54. http://dx.doi.org/10.1557/opl.2012.897.

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ABSTRACTThree-dimensional (3-D) optical modeling based on Finite Element Method of single, double, and triple junction thin-film silicon solar cells is presented. The combination of front periodic gratings with optimal geometrical parameters and rear ZnO/Ag reflector constitutes an efficient light trapping scheme for solar cells in superstrate (pin) configuration. The application of optimized trapezoidal 1-D and 2-D gratings resulted in 25.5% (1-D case) and 32.5% (2-D case) increase in photo-current density with respect to the flat solar cell. The application of inverted pyramidal 2-D gratings in double and triple junction silicon solar cells with very thin absorber layers resulted in a photo-current density > 11 mA/cm2 and > 9 mA/cm2, respectively.

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Hou, Yi, Erkan Aydin, Michele De Bastiani, Chuanxiao Xiao, Furkan H. Isikgor, Ding-Jiang Xue, Bin Chen i in. "Efficient tandem solar cells with solution-processed perovskite on textured crystalline silicon". Science 367, nr 6482 (5.03.2020): 1135–40. http://dx.doi.org/10.1126/science.aaz3691.

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Stacking solar cells with decreasing band gaps to form tandems presents the possibility of overcoming the single-junction Shockley-Queisser limit in photovoltaics. The rapid development of solution-processed perovskites has brought perovskite single-junction efficiencies >20%. However, this process has yet to enable monolithic integration with industry-relevant textured crystalline silicon solar cells. We report tandems that combine solution-processed micrometer-thick perovskite top cells with fully textured silicon heterojunction bottom cells. To overcome the charge-collection challenges in micrometer-thick perovskites, we enhanced threefold the depletion width at the bases of silicon pyramids. Moreover, by anchoring a self-limiting passivant (1-butanethiol) on the perovskite surfaces, we enhanced the diffusion length and further suppressed phase segregation. These combined enhancements enabled an independently certified power conversion efficiency of 25.7% for perovskite-silicon tandem solar cells. These devices exhibited negligible performance loss after a 400-hour thermal stability test at 85°C and also after 400 hours under maximum power point tracking at 40°C.

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Raj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan i Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells". Journal of Physics D: Applied Physics 55, nr 14 (3.12.2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.

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Abstract III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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CHOBOLA, Z., i A. IBRAHIM. "NOISE AND SCANNING BY LOCAL ILLUMINATION AS RELIABILITY ESTIMATION FOR SILICON SOLAR CELLS". Fluctuation and Noise Letters 01, nr 01 (marzec 2001): L21—L26. http://dx.doi.org/10.1142/s021947750100010x.

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This paper presents two methods, namely those using noise and homogeneity measurements of a large area solar cells, for determining the local defects, which bring down efficiency and long reliability of single-crystal silicon solar cells. As a result of the non-uniformities (non-homogeneity) in the large junction area, local areas with lower built-in potentials at the junction lead to hot spots and reduced reliability. The two techniques can be used to give a precise description of the quality of the product technology. Correlations between noise and inhomogeneities for an ensemble of 30 silicon solar cell samples are given.

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Jheng, Wern-Dare. "Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells". Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/654379.

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This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO) and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

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Rozprawy doktorskie na temat "Silicon Single Junction Solar Cells"

Almosni, Samy. "Growth, structural and electro-optical properties of GaP/Si and GaAsPN/ GaP single junctions for lattice-matched tandem solar cells on silicon". Thesis, Rennes, INSA, 2015. http://www.theses.fr/2015ISAR0010/document.

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Cette thèse se concentre sur la fabrication de cellule solaire IIIN- V sur substrat de GaP (001) et sur la croissance de couche de GaP sur Si (001). Le but est de réaliser des cellules solaires hautes efficacité sur un substrat à faible coût afin de les intégrer dans des centrales solaire photovoltaïque sous concentration. Les principaux résultats obtenus montrent : - L’importance de l’utilisation d’AlGaP en tant que couche de prénucléation pour annihiler les parois d’antiphase à l’interface GaP/ Si (néfaste pour les propriétés optoélectroniques des dispositifs) - De nombreuses similitude entre la croissance de GaAsN et de GaPN ce qui permet d’élaborer une stratégie afin d’optimiser les propriétés optoélectroniques du GaAsPN - De fortes corrélations entre les propriétés optique et éléctriques dans les nitrures dilués - La réalisation préliminaire d’une cellule solaire monojonction sur GaP ayant un rendement encourageant de 2.25% considérant la faible épaisseur de l’absorbeur dans cette cellule (300 nm)
This thesis focuses on optimizing the heterogeneous growth of IIIN- V solar cells on GaP (001) and GaP nanolayers on Si (001). The goal is to build high efficiency solar cells on low-cost substrate for the realization of concentrated photovoltaic powerplant. The main results shows: - AlGaP as prenucleation layer increase the annihilations of anti-phase boundaries at the GaP/Si interface (harmful for the electronic properties of the devices). - Similarities between the growth of GaAsN and GaPN giving strategies to improve the GaAsPN electrical properties - Clear correlations between the optical and electrical properties of dilute nitride solar cells, giving interesting tools to optimize the growth of those materials using optical measurements. - The realization of a GaAsPN solar cell on GaP with a yield of 2.25%. This results is encouraging given the thin GaAsPN absorber used in this cell

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Vijh, Aarohi. "Triple Junction Amorphous Silicon based Flexible Photovoltaic Submodules on Polyimide Substrates". Connect to full text in OhioLINK ETD Center, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1122656006.

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Es, Firat. "Fabrication And Characterization Of Single Crystalline Silicon Solar Cells". Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612363/index.pdf.

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The electricity generation using photovoltaic (PV) solar cells is the most viable and promising alternative to the fossil-fuel based technologies which are threatening world&rsquo
s climate. PV cells directly convert solar energy into electrical power through an absorption process that takes place in a solid state device which is commonly fabricated using semiconductors. These devices can be employed for many years with almost no degradation and maintenance. PV technologies have been diversified in different directions in recent years. Many technologies with different advantages have been developed. However, with more than %85 percent market share, Si wafer based solar cells have been the most widely used solar cell type. This is partly due to the fact that Si technology is well known from the microelectronic industry. This thesis is concerned with the production of single crystalline silicon solar cells and optimization of process parameters through the characterization of each processing step. Process steps of solar cell fabrications, namely, the light trapping by texturing, cleaning, solid state diffusion, lithography, annealing, anti reflective coating, edge isolation have all been studied with a systematic approach. Each sample set has been characterized by measuring I-V characteristics, quantum efficiencies and reflectance characteristics. The best efficiency that we reached during this study is 10.37% under AM1.5G illumination. This is below the efficiency values of the commercially available solar cells. The most apparent reason for the low efficiency value is the series resistance caused by the thin metal contacts. It is observed that the efficiency upon the reduction of series resistance effect is reduced. We have shown that the texturing and anti-reflective coating have a critically important effect for light management for better efficiency values. Finally we have investigated the fabrication of metal nanoparticles on the Si wafer for possible utilization of plasmonic oscillation in them for light trapping. The self assembly formation of gold nanoparticles on silicon surface has been successfully demonstrated. The optical properties of the nanoparticles have been studied
however, further and more detailed analysis is required.

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Wilkins, Matthew M. "Design of Multi-junction Solar Cells on Silicon Substrates Using a Porous Silicon Compliant Membrane". Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24096.

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A novel approach to the design of multi-junction solar cells on silicon substrates for 1-sun applications is described. Models for device simulation including porous silicon layers are presented. A silicon bottom subcell is formed by diffusion of dopants into a silicon wafer. The top of the wafer is porosified to create a compliant layer, and a III-V buffer layer is then grown epitaxially, followed by middle and top subcells. Due to the resistivity of the porous material, these designs are best suited to high efficiency 1-sun applications. Numerical simulations of a multi-junction solar cell incorporating a porous silicon compliant membrane indicate an efficiency of 30.7% under AM1.5G, 1-sun for low threading dislocation densities (TDD), decreasing to 23.7% for a TDD of 10^7 cm^-2.

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Palaferri, Daniele. "Manufacturing and characterization of amorphous silicon alloys passivation layers for silicon hetero-junction solar cells". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amslaurea.unibo.it/5940/.

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Nel presente lavoro di tesi magistrale sono stati depositati e caratterizzati film sottili (circa 10 nm) di silicio amorfo idrogenato (a-Si:H), studiando in particolare leghe a basso contenuto di ossigeno e carbonio. Tali layer andranno ad essere implementati come strati di passivazione per wafer di Si monocristallino in celle solari ad eterogiunzione HIT (heterojunctions with intrinsic thin layer), con le quali recentemente è stato raggiunto il record di efficienza pari a 24.7% . La deposizione è avvenuta mediante PECVD (plasma enhanced chemical vapour deposition). Tecniche di spettroscopia ottica, come FT-IR (Fourier transform infrared spectroscopy) e SE (spettroscopic ellipsometry) sono state utilizzate per analizzare le configurazioni di legami eteronucleari (Si-H, Si-O, Si-C) e le proprietà strutturali dei film sottili: un nuovo metodo è stato implementato per calcolare i contenuti atomici di H, O e C da misure ottiche. In tal modo è stato possibile osservare come una bassa incorporazione (< 10%) di ossigeno e carbonio sia sufficiente ad aumentare la porosità ed il grado di disordine a lungo raggio del materiale: relativamente a quest’ultimo aspetto, è stata sviluppata una nuova tecnica per determinare dagli spettri ellisometrici l’energia di Urbach, che esprime la coda esponenziale interna al gap in semiconduttori amorfi e fornisce una stima degli stati elettronici in presenza di disordine reticolare. Nella seconda parte della tesi sono stati sviluppati esperimenti di annealing isocrono, in modo da studiare i processi di cristallizzazione e di effusione dell’idrogeno, correlandoli con la degradazione delle proprietà optoelettroniche. L’analisi dei differenti risultati ottenuti studiando queste particolari leghe (a-SiOx e a-SiCy) ha permesso di concludere che solo con una bassa percentuale di ossigeno o carbonio, i.e. < 3.5 %, è possibile migliorare la risposta termica dello specifico layer, ritardando i fenomeni di degradazione di circa 50°C.

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Davidson, Lauren Michel. "Strategies for high efficiency silicon solar cells". Thesis, University of Iowa, 2017. https://ir.uiowa.edu/etd/5452.

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The fabrication of low cost, high efficiency solar cells is imperative in competing with existing energy technologies. Many research groups have explored using III-V materials and thin-film technologies to create high efficiency cells; however, the materials and manufacturing processes are very costly as compared to monocrystalline silicon (Si) solar cells. Since commercial Si solar cells typically have efficiencies in the range of 17-19%, techniques such as surface texturing, depositing a surface-passivating film, and creating multi-junction Si cells are used to improve the efficiency without significantly increasing the manufacturing costs. This research focused on two of these techniques: (1) a tandem junction solar cell comprised of a thin-film perovskite top cell and a wafer-based Si bottom cell, and (2) Si solar cells with single- and double-layer silicon nitride (SiNx) anti-reflection coatings (ARC). The perovskite/Si tandem junction cell was modeled using a Matlab analytical program. The model took in material properties such as doping concentrations, diffusion coefficients, and band gap energy and calculated the photocurrents, voltages, and efficiencies of the cells individually and in the tandem configuration. A planar Si bottom cell, a cell with a SiNx coating, or a nanostructured black silicon (bSi) cell can be modeled in either an n-terminal or series-connected configuration with the perovskite top cell. By optimizing the bottom and top cell parameters, a tandem cell with an efficiency of 31.78% was reached. Next, planar Si solar cells were fabricated, and the effects of single- and double-layer SiNx films deposited on the cells were explored. Silicon nitride was sputtered onto planar Si samples, and the refractive index and thicknesses of the films were measured using ellipsometry. A range of refractive indices can be reached by adjusting the gas flow rate ratios of nitrogen (N2) and argon (Ar) in the system. The refractive index and thickness of the film affect where the minimum of the reflection curve is located. For Si, the optimum refractive index of a single-layer passivation film is 1.85 with a thickness of 80nm so that the minimum reflection is at 600nm, which is where the photon flux is maximized. However, using a double-layer film of SiNx, the Si solar cell performance is further improved due to surface passivation and lowered surface reflectivity. A bottom layer film with a higher refractive index passivates the Si cell and reduces surface reflectivity, while the top layer film with a smaller refractive index further reduces the surface reflectivity. The refractive indices and thicknesses of the double-layer films were varied, and current-voltage (IV) and external quantum efficiency (EQE) measurements were taken. The double-layer films resulted in an absolute value increase in efficiency of up to 1.8%.

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Lin, Derek Yun Tsung. "Integrating graphene and nanofibers with silicon to form Schottky junction solar cells". Thesis, University of British Columbia, 2013. http://hdl.handle.net/2429/43933.

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Since the development of the world’s first practical solar cell in 1954 at Bell Laboratories, researches have been conducted to increase solar cell efficiencies and lower the fabrication cost. Traditional Schottky junction solar cells suffer from the low transparency of metal films and increasing cost of indium tin oxide. In this thesis, p-type and n-type silicon Schottky junction solar cells are fabricated by integrating novel materials with silicon in an attempt to overcome these limitations. The p-type solar cells integrate graphene and p-type silicon. Graphene is first synthesized using scotch tape exfoliation method, and then using chemical vapor deposition (CVD) of methane on copper foils to improve its quality. The CVD graphene growth system is custom built in our lab. Graphene films are optically and electrically characterized and solar cells are fabricated. Measured solar cell characteristics results are presented and reasons for the obtained parameters are discussed. Finally, methods for improving the solar cell performance are described. The n-type solar cells are fabricated by depositing gold coated Polyacrylonitrile (PAN) nanofiber mesh on top of n-type silicon. Schottky junctions are formed where the nanofibers are in contact with silicon surface, and each junction contributes to the total current. The nanofibers are economically produced by electrospinning and coated with gold by sputtering. The solar cells are characterized and the results suggest this structure can be a promising candidate for photovoltaic application. In addition to experimental work, we conduct numerical simulations of graphene based Schottky junction solar cells to identify possible future applications of graphene. Copper indium gallium diselenide, cadmium telluride, and amorphous silicon are chosen as the semiconductor bases because of their high absorption coefficient, high/tunable bandgap, and the possibility for economical fabrication as compared to single crystal silicon technology. The simulation is carried out using MATLAB with material properties obtained from textbooks and published literatures. The simulation results provide an estimate of the relevant photovoltaic parameters. It identifies graphene/p-type cadmium telluride as a potential Schottky junction solar cell that can achieve a conversion efficiency of 11.3%, if the graphene sheet resistance of 30 ohms/square and transmittance of 90% can be attained.

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Lynch, Marianne Catherine. "Modelling and optimisation of single junction strain balanced quantum well solar cells". Thesis, Imperial College London, 2011. http://hdl.handle.net/10044/1/8479.

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In an attempt to find the optimum number of wells for maximum conversion efficiency a pair of otherwise identical strain balanced samples, one containing 50 wells and the other 65 wells have been characterised. The 65 well sample is found to possess a lower predicted efficiency than the 50 well sample, suggesting that the optimum well number lies between these values. Devices grown using tertiary butyl arsine (TBAs) are found to possess comparable conversion efficiencies to the control cells grown using arsine and slightly superior dark IV characteristics, indicating that TBAs may be substituted for arsine without loss of device efficiency and may even be beneficial to cell performance. Several fundamental refinements to the existing quantum efficiency model of are explored. Firstly, expressions for the strained band gaps are derived. A value for the conduction band offset is determined using the difference in energy between the heavy and light hole exciton peaks in low temperature photo current scans and found to be 0.55±0.03. The magnitude of the el-hhl exciton binding energy is also estimated from these scans and found to be in excellent agreement with the value obtained from a simple, parameterized expression for the exciton binding energy. Finally, an absolute calculation for the absorption coefficient is incorporated into the quantum efficiency model and values for the heavy and light hole in-planes masses are obtained. The model is found to underestimate the level of absorption in the intrinsic region by an amount consistent with estimates of the magnitude of the reflection from the back surface. The conversion efficiency of a sample predicted using SOL is compared to an independently obtained value. Good agreement is observed between the two results (25.3% and 25.7% for 317 suns AM1.5D). Additionally, an optimum structure for illumination by the AM1.5D spectrum was found to be a 120A well ofIno.lGaAs.

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Al, ghzaiwat Mutaz. "Fabrication and study of solar cell modules based on silicon nanowire based radial junction solar cells". Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLX101/document.

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Dans cette thèse, nous avons utilisé un réacteur de dépôt chimique en phase vapeur assisté par plasma (PECVD) à basse température afin de fabriquer des minimodules à base de cellules solaires à jonction radiale (RJ SiNWs) sur des substrats de verre de 5x5 cm² en employant la gravure laser pour la mise en série des cellules.Nous avons utilisé une couche de 600 nm d’épaisseur de dioxyde d’étain dopée au fluor (FTO) déposée sur du verre sodocalcique (SLG). La couche de FTO sert à la fois de contact arrière pour le module et de source de catalyseur Sn une fois la couche de FTO réduite par un plasma de H2. Ensuite, on fait croître des SiNW dopés p par le procédé Vapor-Liquid-Solid (VLS) assisté par plasma, suivi d’un dépôt d’une couche de Si intrinsèque a-Si:H et d’une couche de Si dopée n µc-SiOx:H, afin d’obtenir une cellule solaire à jonction radiale PIN. Nous avons obtenu une efficacité énergétique de 6.3 % avec une surface active de 0.126 cm². C’est à notre connaissance l’efficacité la plus élevée obtenue en utilisant une couche de FTO comme source de catalyseur Sn.La gravure laser a été utilisée pour retirer localement des couches minces dans l’objectif de fabriquer des minimodules solaires. Grâce à la gravure laser, une connexion monolithique en série entre les cellules solaires à jonction radiale adjacentes a pu être accomplie. Dans cette thèse, la gravure laser a servi à retirer localement la couche de FTO ainsi que les RJ SiNWs, étapes appelées respectivement P1 et P2. On dépose ensuite une couche transparente d’oxyde d’indium-étain (ITO), servant de contact avant, par pulvérisation cathodique (étape P3), et on procède à la séparation en bandes par la technique « lift-off ». Nous avons mené une étude détaillée de l’étape P2 de gravure obtenue par un laser vert (532 nm) et IR (1064nm). La puissance du laser a un impact direct sur l’ablation des RJ SiNWs, et peut aussi endommager le contact arrière de la cellule. Nous avons déterminé que le laser vert entraîne une fonte partielle de matériau sur les bords de la zone gravée, contrairement au laser IR qui produit des gravures de meilleure qualité. La cartographie Raman des zones gravées permet une analyse des matériaux dans la zone étudiée, et a donné des indications sur la composition des résidus laissés par les impulsions laser. Nous avons démontré que l’utilisation du laser IR pour l’étape P2 de gravure est préférable. Elle permet d’avoir des connexions en série de haute qualité entre les cellules.Enfin, le mini-module optimisé de 10 cm² à base de RJ SiNWs a atteint un rendement de conversion énergétique de 4.37 % avec une puissance générée de 44 mW, grâce à l’amélioration de l’étape P2 et de l’impression par jet d’encre d’une grille dense d’Ag. À notre connaissance, cette puissance générée est la plus élevée rapportée pour des modules solaires à base de cellules à jonction radiale
In this thesis, we have used a low-temperature plasma-enhanced chemical vapor deposition (PECVD) reactor to fabricate Si nanowire radial junction solar mini-modules on 5x5 cm2 glass substrates with the assistance of the laser scribing technique for the series connection of the cells.We have used fluorine-doped tin oxide (FTO) deposited on soda-lime glass substrates (SLG) as a back contact as well as the source of the Sn catalyst which was formed by a direct reduction of FTO using a H2 plasma. Subsequently, p-type SiNWs were grown using plasma-assisted vapor liquid solid (VLS) process, followed by the deposition of intrinsic a-Si:H and n-type µc-SiOx:H layers to achieve pin radial junction solar cells. We have obtained an energy conversion efficiency of 6.3 % with an active area of solar cells of 0.126 cm2, which is to our knowledge, the highest efficiency obtained based on FTO layers as a source of Sn catalyst.Laser scribing was used to perform a selective removal of thin-film materials in order to fabricate minimodules. With laser scribing, a monolithic series connection between adjacent RJ SiNW solar cells on the same glass substrate was achieved. In particular, the laser scribing system has been used to perform selective removal of FTO thin-film and RJ SiNWs, which are commonly known as step P1 and P2, respectively, and to perform a final scribe to isolate the active region from the rest of the substrate. The transparent top ITO contact was sputtered and cell stripes were defined using the lift-off technique (step P3).We have carried out a detailed study of the P2 laser scribe obtained with either green (532 nm) or IR (1064 nm) laser setups. The power of the laser has to be controlled as it has a direct impact on the removal of SiNW RJs and it can damage the underneath FTO contact. We have found that the scribing using a green laser produces a partial melting outside the scribed spots, unlike the IR laser which provides a cleaner scribing and less crystallized material at the edges of scribed spots. Mapping of the scribed spots using Raman spectroscopy allowed analyzing the material composition within the scanned area inside the craters left by the laser pulses. We have demonstrated that the use of the IR laser is preferable for P2 scribing because it can provide a high-quality series connection between cells.Finally, the optimized 10 cm2 SiNW RJ mini-module has reached an energy conversion efficiency of 4.37 % with power generation of 44 mW, thanks to the improved P2 laser scribing and the dense Ag grid printed using the ink-jet method. This performance represents, to the best of our knowledge, the highest reported power generation for silicon nanowire-based solar modules on glass substrates

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Stoke, Jason A. "Spectroscope ellipsometry analysis of the component layers of hydrogenated amorphous silicon triple junction solar cells /". Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1222351957.

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Thesis (M.S.)--University of Toledo, 2008.
Typescript. "Submitted as partial fulfillment of the requirements for Master of Science in Physics." "A thesis entitled"--at head of title. Bibliography: leaves 129-133.

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Książki na temat "Silicon Single Junction Solar Cells"

National Renewable Energy Laboratory (U.S.) i IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.), red. Junction transport in epitaxial film silicon heterojunction solar cells: Preprint. Golden, CO]: National Renewable Energy Laboratory, 2011.

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Shibib, Muhammed. Device Physics for Engineering Design of Heavily Doped Regions in Pn-Junction Silicon Solar Cells. Creative Media Partners, LLC, 2019.

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Shibib, Muhammed. Device Physics for Engineering Design of Heavily Doped Regions in Pn-Junction Silicon Solar Cells. Creative Media Partners, LLC, 2019.

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Yeh, Chune-Sin. An expert system approach to the optimal design of single-junction and multijunction tandem solar cells. 1988.

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Wolf, E. L. Solar Cell Physics and Technologies. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0010.

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Solar cells are based on semiconductor pn junctions. Absorption of sunlight is optimal at bandgap energies near one electron volt, and greatly increases the reverse current density. The efficiency of the cell is described by the “filling factor”, and is limited, for single junction cells, by the Quiesser–Shockley limit, near 30 percent. Tandem cells, series combinations of cells, absorb a larger portion of the solar spectrum with higher efficiency but with greater complexity and cost. Such cells are used with focusing optics that inherently raises the efficiency, but also the complexity and cost. This is a textbook for physics, chemistry and engineering students interested in the future of energy as impacted by depletion of fossil fuels, and in the effects of fossil fuel burning on climate.

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Rai, Dibya Prakash, red. Advanced Materials and Nano Systems: Theory and Experiment - Part 2. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/97898150499611220201.

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The discovery of new materials and the manipulation of their exotic properties for device fabrication is crucial for advancing technology. Nanoscience, and the creation of nanomaterials have taken materials science and electronics to new heights for the benefit of mankind. Advanced Materials and Nanosystems: Theory and Experiment covers several topics of nanoscience research. The compiled chapters aim to update students, teachers, and scientists by highlighting modern developments in materials science theory and experiments. The significant role of new materials in future technology is also demonstrated. The book serves as a reference for curriculum development in technical institutions and research programs in the field of physics, chemistry and applied areas of science like materials science, chemical engineering and electronics. This part covers 12 topics in these areas: 1. Recent advancements in nanotechnology: a human health Perspective 2. An exploratory study on characteristics of SWIRL of AlGaAs/GaAs in advanced bio based nanotechnological systems 3. Electronic structure of the half-Heusler ScAuSn, LuAuSn and their superlattice 4. Recent trends in nanosystems 5. Improvement of performance of single and multicrystalline silicon solar cell using low-temperature surface passivation layer and antireflection coating 6. Advanced materials and nanosystems 7. Effect of nanostructure-materials on optical properties of some rare earth ions doped in silica matrix 8. Nd2Fe14B and SmCO5: a permanent magnet for magnetic data storage and data transfer technology 9. Visible light induced photocatalytic activity of MWCNTS decorated sulfide based nano photocatalysts 10. Organic solar cells 11. Neodymium doped lithium borosilicate glasses 12. Comprehensive quantum mechanical study of structural features, reactivity, molecular properties and wave function-based characteristics of capmatinib

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Części książek na temat "Silicon Single Junction Solar Cells"

Yuan, Yujie, Guofu Hou, Junming Xue, Jianjun Zhang, Xiaoyan Han, Yunzhou Liu, Ying Zhao i Xinhua Geng. "Hydrogenated Microcrystalline Silicon Single-Junction Nip Solar Cells". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1247–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_251.

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Nomoto, Katsuhiko, i Takashi Tomita. "Development of Amorphous-Silicon Single-Junction Solar Cells and Their Application Systems". W Springer Series in Photonics, 105–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-10549-8_6.

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Heidarzadeh, Hamid, Mahboubeh Dolatyari, Ghassem Rostami i Ali Rostami. "Modeling of Solar Cell Efficiency Improvement Using Pyramid Grating in Single Junction Silicon Solar Cell". W 2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014), 61–67. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-16901-9_8.

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Goetzberger, Adolf, Joachim Knobloch i Bernhard Voß. "The p-n Junction". W Crystalline Silicon Solar Cells, 49–65. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.ch4.

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Zhang, Chunfu, Jincheng Zhang, Xiaohua Ma i Qian Feng. "High-Efficiency III-V Single-Junction and Multi-junction Solar Cells". W Semiconductor Photovoltaic Cells, 127–75. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9480-9_4.

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Yu, Linwei, i Pere Roca i Cabarrocas. "Polymorphous Nano-Si and Radial Junction Solar Cells". W Handbook of Photovoltaic Silicon, 1–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_32-1.

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Yu, Linwei, i Pere Roca i Cabarrocas. "Polymorphous Nano-Si and Radial Junction Solar Cells". W Handbook of Photovoltaic Silicon, 879–931. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_32.

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Wang, Qi, M. R. Page, E. Iwaniczko, Y. Q. Xu, L. Roybal, R. Bauer, D. Levi i in. "Silicon Hetero Junction Solar Cells by Hot-Wire CVD". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1144–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_226.

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Emel’yanov, A. M. "Luminescent Study of Recombination Processes in the Single-Crystal Silicon and Silicon Structures Fabricated Using High-Efficiency Solar Cell Technology". W High-Efficiency Solar Cells, 59–83. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01988-8_2.

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Liu, F., J. Cui, Q. Zhang, M. Zhu i Y. Zhou. "Carrier Transport Mechanism in Thin Film Silicon/Crystalline Silicon Hetero-Junction Solar Cells". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 982–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_189.

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Streszczenia konferencji na temat "Silicon Single Junction Solar Cells"

Yamagishi, H., M. Yamaguchi, A. Hiroe, J. Takada, M. Kondo, K. Tsuge, S. Mizukami i Y. Tawada. "Stability and performances of amorphous silicon multijunction and single junction solar cells". W AIP Conference Proceedings Volume 157. AIP, 1987. http://dx.doi.org/10.1063/1.36495.

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Yan, Baojun, Lei Zhao, Guanghong Wang, Hongwei Diao, Ge Wang, Jinwei Chen i Wenjing Wang. "Preparation of High-performance Single-junction Hydrogenated Amorphous Silicon Germanium Solar Cells". W Advanced Optoelectronics for Energy and Environment. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asu3a.6.

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Ghosh, H. R., i Himangshu Ranjan Ghosh. "Study on Amorphous Silicon Single Junction p-i-n PV Cell". W ISES Solar World Congress 2015. Freiburg, Germany: International Solar Energy Society, 2016. http://dx.doi.org/10.18086/swc.2015.05.07.

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Geissendorfer, Stefan, Cordula Walder, Oleg Sergeev, Karsten von Maydell i Carsten Agert. "Simulation of single-junction thin-film silicon solar cells with varying intrinsic layer thickness". W 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317638.

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Chowdhury, Farhan Shadman, Md Asif Reza Taraque i Yeasir Arafat. "Efficiency calculation of single junction silicon solar cell at different doping concentrations". W 2014 3rd International Conference on the Developments in Renewable Energy Technology (ICDRET). IEEE, 2014. http://dx.doi.org/10.1109/icdret.2014.6861721.

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Sarkar, Md Nazmul Islam, i Himangshu Ranjan Ghosh. "Efficiency improvement of amorphous silicon single junction solar cell by design optimization". W 2017 International Conference on Electrical, Computer and Communication Engineering (ECCE). IEEE, 2017. http://dx.doi.org/10.1109/ecace.2017.7912989.

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Croitoru, N., M. Zafrir, S. Amirhaghi i Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.

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Junctions between transparent conductor (ITO) and single-crystal silicon or polycrystalline silicon (poly-Si) were prepared. Electrical I–V and C-V, as well as photovoltage decay (PVD) measurements, were performed. Data of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), efficiency (η), built-in potential (ϕ- bl ), and lifetime were obtained. It was found that the lifetime of photogenerated carriers in the poly-Si/ITO junction is much shorter than in single crystal. There are two types of recombination center that have an essential influence on the efficiency of the solar cells; those at the contact between ITO and the silicon; and those due to the grain boundaries (GB) between the crystallites in poly-Si. The solar cells were annealed, either by heating them in vacuum or by irradiation with the light of a Cd–Ne laser (441.6 nm). The annealing reduced the influence of the recombination centers at the contact, whereas those at the GB were not affected. Passivation of GB with iodine improved the characteristics of the solar cells. This improvement is attributed to the reduction of the recombination centers at GB. The influence of the annealing and passivation on the lifetime of this type of cell was studied by measuring PVD.

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Hou, Guofu, Jing Zhao, Lisha Bai, Jun Ma, Jian Du, Jian Ni, Bofei Liu, Xinliang Chen, Xiaodan Zhang i Ying Zhao. "Research & Development of Thin-Film Silicon Single- and Muli-junction Solar Cells on Stainless Steel Flexible Substrate". W Advanced Optoelectronics for Energy and Environment. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asa4a.5.

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Biswas, Somnath, i Somenath Chatterjee. "Effect of thickness and temperature on electrical properties of single junction thin film silicon solar cell". W 2017 2nd International Conference on Communication and Electronics Systems (ICCES). IEEE, 2017. http://dx.doi.org/10.1109/cesys.2017.8321323.

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Scuto, Andrea, Cosimo Gerardi, Anna Battaglia, Andrea Canino i Salvatore Lombardo. "Effect of field and pump light wavelength during DC stress on the efficiency improvement of amorphous silicon single junction and tandem solar cells". W 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2017. http://dx.doi.org/10.1109/irps.2017.7936273.

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Raporty organizacyjne na temat "Silicon Single Junction Solar Cells"

Carlson, D., R. Ayra, M. Bennett, J. Brewer, A. Catalano, R. D'Aiello, C. Dickson i in. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Office of Scientific and Technical Information (OSTI), wrzesień 1989. http://dx.doi.org/10.2172/5434340.

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Catalano, A., D. Carlson, R. Ayra, M. Bennett, R. D'Aiello, C. Dickson, C. Fortmann i in. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Office of Scientific and Technical Information (OSTI), październik 1989. http://dx.doi.org/10.2172/5496057.

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Ayra, R., M. Bennett, C. Dickson, B. Fieselmann, C. Fortmann, B. Goldstein, J. Morris i in. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Office of Scientific and Technical Information (OSTI), październik 1989. http://dx.doi.org/10.2172/5383673.

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Wiesmann, H., J. Dolan, G. Fricano i V. Danginis. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986. Office of Scientific and Technical Information (OSTI), luty 1987. http://dx.doi.org/10.2172/6587080.

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Delahoy, A. E., E. Eser, F. Kampas i R. Lenskold. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Final report, October 1, 1983--January 31, 1987. Office of Scientific and Technical Information (OSTI), marzec 1989. http://dx.doi.org/10.2172/6304136.

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Ashton, G., F. Aspen, K. Epstein, R. Jacobson, F. Jeffrey, R. Patel i J. Shirck. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Annual report, 1 December 1983-30 November 1984. Office of Scientific and Technical Information (OSTI), kwiecień 1985. http://dx.doi.org/10.2172/5586079.

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Ashton, G., F. Aspen, R. Jacobson, F. Jeffrey i N. Tran. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Semiannual subcontract progress report, 1 December 1984-31 May 1985. Office of Scientific and Technical Information (OSTI), styczeń 1986. http://dx.doi.org/10.2172/6103083.

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Delahoy, A., F. Ellis, Jr., E. Eser, H. Volltrauer i H. Weakliem. Research on high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells. Semiannual subcontract progress report, 1 October 1984-31 March 1985. Office of Scientific and Technical Information (OSTI), listopad 1985. http://dx.doi.org/10.2172/6315679.

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Aspen, F., D. Grimmer, R. Jacobson, F. Jeffrey i N. Tran. Research on high-efficiency single-junction monolithic thin-film amorphous silicon solar cells. Annual subcontract report, 1 December 1984-30 November 1985. Phase 2. Office of Scientific and Technical Information (OSTI), kwiecień 1986. http://dx.doi.org/10.2172/5838353.

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Starkenburg, Daken, Asmerom Weldeab, Danielle Fagnani, Lei Li, Zhengtao Xu, Xiaoyang Yan, Michael Sexton, Davita Watkins, Ronald Castellano i Jiangeng Xue. Final Scientific/Technical Report -- Single-Junction Organic Solar Cells with >15% Efficiency. Office of Scientific and Technical Information (OSTI), maj 2018. http://dx.doi.org/10.2172/1435607.

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