Gotowe bibliografie tematyczne / Silicon optical waveguides

Gotowa bibliografia na temat „Silicon optical waveguides”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 19 lutego 2023

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Artykuły w czasopismach na temat "Silicon optical waveguides"

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Matsuda, Nobuyuki, i Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips". Nanophotonics 5, nr 3 (1.08.2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.

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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.
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Huong, Nguyen Thanh, Nguyen Van Chinh i Chu Manh Hoang. "Wedge Surface Plasmon Polariton Waveguides Based on Wet-Bulk Micromachining". Photonics 6, nr 1 (27.02.2019): 21. http://dx.doi.org/10.3390/photonics6010021.

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In this paper, we propose and investigate the modal characteristics of wedge surface plasmon polariton (SPP) waveguides for guiding surface plasmon waves. The wedge SPP waveguides are composed of a silver layer deposited onto the surface of a wedge-shaped silicon dielectric waveguide. The wedge-shaped silicon dielectric waveguides are explored from the anisotropic wet etching property of single crystal silicon. The wedge SPP waveguides are embedded in a dielectric medium to form the metal–dielectric interface for guiding the surface plasmon waves. The propagation characteristics of the wedge SPP waveguides at the optical telecommunication wavelength of 1.55 μm are evaluated by a numerical simulation. The influence of the physical parameters such as the dimensions of the wedge SPP waveguide and the refractive index of the dielectric medium on the propagation of the surface plasmon wave is investigated. In addition, by comparing the propagation characteristics, we derive the wedge SPP waveguide with the optimal performance.
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Manaf, N. Aina C., Mohd Hanapiah M. Yusoff i M. Kamil Abd-Rahman. "Optimized Nano-Slot Silicon Waveguide Structures for Optical Sensing Applications". Advanced Materials Research 832 (listopad 2013): 212–17. http://dx.doi.org/10.4028/www.scientific.net/amr.832.212.

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In this paper, an investigation of optimized vertical and non-vertical nano-slot silicon waveguides with different cover media (cladding) is presented. The mode properties and light confining effects for both of these slot waveguides geometry are investigated at operating wavelength of 1550nm. Light propagation of waveguide modal profiles for electric field and intensity of such slot waveguides are also presented.
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Densmore, A., D. X. Xu, S. Janz, P. Waldron, J. Lapointe, T. Mischki, G. Lopinski, A. Delâge, J. H. Schmid i P. Cheben. "Sensitive Label-Free Biomolecular Detection Using Thin Silicon Waveguides". Advances in Optical Technologies 2008 (16.06.2008): 1–9. http://dx.doi.org/10.1155/2008/725967.

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We review our work developing optical waveguide-based evanescent field sensors for the label-free, specific detection of biological molecules. Using high-index-contrast silicon photonic wire waveguides of submicrometer dimension, we demonstrate ultracompact and highly sensitive molecular sensors compatible with commercial spotting apparatus and microfluidic-based analyte delivery systems. We show that silicon photonic wire waveguides support optical modes with strong evanescent field at the waveguide surface, leading to strong interaction with surface bound molecules for sensitive response. Furthermore, we present new sensor geometries benefiting from the very small bend radii achievable with these high-index-contrast waveguides to extend the sensing path length, while maintaining compact size. We experimentally demonstrate the sensor performance by monitoring the adsorption of protein molecules on the waveguide surface and by tracking small refractive index changes of bulk solutions.
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Bondarenko, Siegfried, Claus Villringer i Patrick Steglich. "Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding". Applied Sciences 9, nr 1 (27.12.2018): 89. http://dx.doi.org/10.3390/app9010089.

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Nonlinear optical dyes doped in optical polymer matrices are widely used for electro-optical devices. Linear optical properties change with dye concentration, which leads to a change in modal properties, especially in nano-structured integrated waveguides such as silicon slot-waveguides. Here, we investigate the influence of a nonlinear optical dye on the performance of a silicon-organic hybrid slot-waveguide. A simulation study of the modal and optical confinement properties is carried out and dependence of the structural parameters of the slot-waveguide and the organic cladding material is taken into account. As cladding material, a guest-host polymer system is employed comprising the nonlinear optical dye Disperse Red 1 (DR1) doped in a poly[methyl methacrylate] (PMMA) matrix. The refractive indices of doped and undoped PMMA were deduced from ellipsometric data. We present a guideline for an optimized slot-waveguide design for the fabrication in silicon-on-insulator technology giving rise to scalable, high-performance integrated electro-optical modulators.
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Feng, Song, i Bin Xue. "Research into Two Photonic-Integrated Waveguides Based on SiGe Material". Materials 13, nr 8 (16.04.2020): 1877. http://dx.doi.org/10.3390/ma13081877.

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SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.
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Mahmudin, Dadin, Shobih, Pamungkas Daud i Yusuf Nur Wijayanto. "Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate". Jurnal Elektronika dan Telekomunikasi 17, nr 2 (31.12.2017): 36. http://dx.doi.org/10.14203/jet.v17.36-41.

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Optical waveguides are important for guiding lightwave from a place to other places. Propagation and insertion losses of the optical waveguides should be considered to be in low values. Recently, optical waveguides with circular structures, which are optical fibers, are used widely for guiding lightwave in long-distance optical communication with very low propagation and insertion losses. Simultaneously, optical waveguides with planar structure are also developed for short distance communication in optical devices. We have reported design and analysis of the planar optical waveguides. In this paper, fabrication of planar optical waveguides using a polyimide material on thin silicon dioxide combined with the silicon substrate is reported. The polyimide material is used for the core of the optical waveguides. The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical waveguides. Fabrication of the optical waveguides such as oxidation, photoresist coating, masking, ultra-violet exposure, and etching was done. The fabricated optical waveguides were characterized physically using a standard microscope and scanning electron microscope (SEM). The fabrication processes and characterization results are reported and discussed in detail.
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Sun, Siwei, Ying Chen, Yu Sun, Fengman Liu i Liqiang Cao. "Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides". Photonics 8, nr 3 (16.03.2021): 79. http://dx.doi.org/10.3390/photonics8030079.

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Fiber-to-chip optical interconnects is a big challenge in silicon photonics application scenarios such as data centers and optical transmission systems. An edge coupler, compared to optical grating, is appealing to in the application of silicon photonics due to the high coupling efficiency between standard optical fibers (SMF-28) and the sub-micron silicon wire waveguides. In this work, we proposed a novel fiber–chip edge coupler approach with a large mode size for silicon photonic wire waveguides. The edge coupler consists of a multiple structure which was fulfilled by multiple silicon nitride layers embedded in SiO2 upper cladding, curved waveguides and two adiabatic spot size converter (SSC) sections. The multiple structure can allow light directly coupling from large mode size fiber-to-chip coupler, and then the curved waveguides and SSCs transmit the evanescent field to a 220 nm-thick silicon wire waveguide based on the silicon-on-insulator (SOI) platform. The edge coupler, designed for a standard SMF-28 fiber with 8.2 μm mode field diameter (MFD) at a wavelength of 1550 nm, exhibits a mode overlap efficiency exceeding 95% at the chip facet and the overall coupling exceeding 90%. The proposed edge coupler is fully compatible with standard microfabrication processes.
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La Porta, Antonio, Jonas Weiss, Roger Dangel, Daniel Jubin, Norbert Meier, Folkert Horst i Bert Jan Offrein. "Broadband and scalable optical coupling for silicon photonics using polymer waveguides". Advanced Optical Technologies 7, nr 1-2 (25.04.2018): 107–13. http://dx.doi.org/10.1515/aot-2017-0064.

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AbstractWe present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.
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Alvarado, M. A., M. V. Pelegrini, I. Pereyra, T. A. A. de Assumpção, L. R. P. Kassab i M. I. Alayo. "Fabrication and characterization of aluminum nitride pedestal-type optical waveguide". Canadian Journal of Physics 92, nr 7/8 (lipiec 2014): 951–54. http://dx.doi.org/10.1139/cjp-2013-0587.

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In this paper we present the fabrication and characterization of pedestal-type optical waveguides using aluminum nitride (AlN) as core layer. To the best knowledge of the authors, the utilization of AlN as core layer in pedestal-type waveguides has not been studied. The AlN thin films were obtained by radio frequency reactive magnetron sputtering from a pure aluminum target. The AlN refractive index was determined by ellipsometry. The optical waveguides were fabricated by the pedestal technique, which consists in etching the silicon oxide lower cladding layer before depositing the core layer. Thus, the waveguide geometrical definition is simplified because etching the AlN core is not necessary. AlN thin films of 0.6, 1, and 1.2 μm thick were deposited on thermally grown silicon dioxide using crystalline silicon (100) as substrate. The pedestal profile was defined using conventional photolithography, followed by plasma etching of the cladding layer. Optical propagation losses were measured for pedestal heights of 1 μm and widths from 1 to 100 μm.
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Rozprawy doktorskie na temat "Silicon optical waveguides"

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Rickman, Andrew George. "Silicon on insulator integrated optical waveguides". Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/843104/.

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This research project explored the potential of forming an integrated optics technology based on silicon core waveguides suitable for application in sensors and communications in the wavelength range 1.2 to 1.6 mum. Integrated optics has evolved around the use of compounds such as lithium niobate and III-V semiconductors due to their available electro-optic properties. By contrast silicon has received relatively little attention as its indirect band gap has prevented the fabrication of light sources in the material and its centrosymmetric crystal structure means that it has no useful linear electro-optic effect. The lack of a demonstrated low loss integrated optical waveguide compatible with single mode optical fibres has been a further limitation. However, these major drawbacks in silicon waveguide technology may be more than offset by the potential advantages of forming silicon integrated optical devices using well established silicon microelectronics fabrication methods. The project focused research on waveguiding in silicon-on-insulator (SOI) structures with the aim of developing a practical low loss waveguide in these structures and understanding the various loss mechanisms. In principle the optical absorption of pure crystalline silicon over the wavelength range of interest allows waveguides with losses less than 0.1 dB/cm to be formed. SOI material formed by ion implantation has been developed for microelectronic applications and provides a commercial source of a silicon planar waveguide structure with high quality interfaces and low defect density. The project studied waveguides based on this material. Initially planar waveguides with silicon thickness from 0.57 to 7.3 microns and buried oxide thickness of 0.07 to 0.4 microns were studied. Fabrication methods and structures were identified which allowed multi-microns planar SOI waveguides to be formed with losses less than the benchmark of 1 dB/cm. For these structures a buried oxide thickness of 0.4 microns was found to be sufficient to prevent substrate leakage loss. It has been concluded that the predominate loss mechanism is scattering of light at the silicon to buried oxide interface. Rib waveguides were formed in SOI following the insight into loss mechanisms gained in the planar waveguide studies. Optical rib waveguides with widths from 2.73 to 7.73 microns were formed in SIMOX (Separation by IMplantation of OXygen) based SOI structures consisting of a 4.32 micron thick surface silicon layer and a 0.398 micron buried oxide layer. The effect of waveguide width, bend radius, Y-junction splitting and interface roughness on loss and mode characteristics were studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single mode waveguides even though planar SOI waveguides of similar multi-micron dimension are multimode. The propagation losses of waveguides 3.72 microns wide were found to be 0.0 dB/cm and 0.4 dB/cm for the TE and TM modes respectively when measured at 1.523 microns. The measurement uncertainty was estimated to be +/-0.5 dB/cm. These results are thought to be the lowest loss measurements for silicon integrated optical waveguides reported to date. During the course of the project other researchers have demonstrated useful electro-optic properties in silicon semiconductor junctions based on the free carrier plasma dispersion effect and room temperature electroluminescence in silicon based junctions. The combination of these developments with the practical waveguide structure demonstrated in this project now makes the possibility of developing a practical silicon based integrated optics technology a reality.
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Bozeat, Robert John. "Thin film optical waveguides on silicon". Thesis, University of Nottingham, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320551.

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Spaargaren, Susan Marianne Rosemary. "Radiation effects on silica based waveguides". Thesis, Imperial College London, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267942.

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Powell, Olly, i n/a. "Fabrication of Micro-Mirrors in Silicon Optical Waveguides". Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20040719.115224.

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The conventional large radii bends used in large cross section silicon-on-insulator waveguides were replaced with novel wet etched corner mirrors, potentially allowing much smaller devices, therefore lower costs. If such corners had been based on reactive ion etch techniques they would have had the disadvantage of rougher surfaces and poor alignment in the vertical direction. Wet etching overcomes these two problems by providing smooth corner facets aligned precisely to the vertical {100} silicon crystallographic planes. The waveguides obtained had angled walls, and so numerical analysis was undertaken to establish the single mode condition for such trapezoidal structures. To show the relationship between fabrication tolerances and optical losses a three dimensional simulation tool was developed, based on expansion of the incident mode into plane waves. Various new fabrication techniques were are proposed, namely: the use of titanium as a mask for deep silicon wet anisotropic etching, a technique for aligning masks to the crystal plane on silicon-oninsulator wafers, a corner compensation method for sloping sidewalls, and the suppression of residues and pyramids with the use of acetic acid for KOH etching. Also, it was shown that isopropyl alcohol may be used in KOH etching of vertical walls if the concentration and temperature are sufficiently high. As the proposed corner mirrors were convex structures the problem of undercutting by high order crystal planes arose. This was uniquely overcome by the addition of some structures to effectively convert the convex structures into concave ones. The corner mirrors had higher optical losses than were originally hoped for, similar to those of mirrors in thin film waveguides made by RIE. The losses were possibly due to poor angular precision of the lithography process. The design also failed to provide adequate mechanisms to allow the etch to be stopped at the optimal time. The waveguides had the advantage over thin film technology of large, fibre-compatible cross sections. However the mirror losses must be reduced for the technology to compete with existing large cross section waveguides using large bends. Potential applications of the technology are also discussed. The geometry of the crystal planes places fundamental limits on the proximity of any two waveguides. This causes some increase in the length of MMI couplers used for channel splitting. The problem could possibly be overcome by integrating one of the mirrors into the end of the MMI coupler to form an L shaped junction.
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Arrand, Helena Frances. "Optical waveguides and components based on porous silicon". Thesis, University of Nottingham, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243510.

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Syahriar, Ary. "Passive integrated optical devices formed by electron beam irradiation of silica-on-silicon layers". Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.481291.

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Hewitt, Peter Douglas. "Active optical devices in silicon-on-insulator rib waveguides". Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/843522/.

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Much progress has been made in the development of active silicon opto-electronic devices over the last 15 years. This is primarily due to the widely accepted belief that the free carrier effect is the most efficient optical modulation and switching mechanism in silicon, along with the potential advantages of combining optical and electronic devices onto a single silicon substrate rather than using discrete components. A study of the scientific literature shows that whilst numerous devices have been reported, few have been seriously optimised. In the literature, devices have consisted primarily of two or three terminal devices based around a rib waveguide. The three terminal devices are fewer in number but generally perform better. Conversely, two terminal devices have received a little more attention in terms of producing faster devices. Therefore, this work provides an in depth analysis of the performance of p+-i-n+ diodes when configured as optical modulators, with the aim of improving both the device DC and transient performance characteristics. The primary DC performance characteristic is the current required to achieve a given phase change and the transient performance characteristics are measured in terms of the device rise and fall times. These characteristics have been studied with variations in geometrical and fabrication based parameters such as the position and doping concentration of the contacts, the aspect ratio of the rib waveguides, and the overall dimensions. The key result from the modelling is that the most efficient multi-micron size device is a three terminal device with high doping concentration, constant doping profiles and large diffusion depth doped regions located close to the rib edge. A theoretical device of this nature required a current of only 2.7mA for a ? radian phase shift with rise and fall times of 22ns and 2ns respectively. The best previously achieved was a device which theoretically required 4mA for a ? radian phase shift. Additionally, by including isolation trenches on either side of the doped regions the DC performance characteristics can be further improved by up to 74%. There are also advantages in reducing the dimensions of the devices to 1 micron or less. At these dimensions the DC and transient performance characteristics are improved by more than a further order of magnitude, hence requiring fractions of 1mA for a ? radian phase shift. Two of the most promising designs have been fabricated and experimentally analysed. Due to fabrication constraints the most efficient device was not fabricated. However, both two and three terminal devices were fabricated. The best device tested experimentally was a three terminal device that required a current of 14mA for a ? phase shift. The modelling and experimental results agree well therefore validating the modelling. Therefore we can be confident that the additional theoretical results for devices that could not be fabricated are reliable, and hence significant further improvements could be made by fabricating these devices. Likely roles for these types of devices are medium bandwidth modulators/switches and a variety of sensor applications.
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Timotijevic, Branislav. "Auto-regressive optical filters in silicon-on-insulator waveguides". Thesis, University of Surrey, 2007. http://epubs.surrey.ac.uk/844086/.

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The subject of the thesis is the modelling, design, fabrication and characterisation of single-stage and multi-stage resonators on Silicon-on-Insulator (SOI) strip and rib waveguides. The devices have been investigated with the aim to produce small and efficient wavelength selective elements that could one day be used in multiplexers, filters and other components of integrated optical circuits. Due to the complexity of devices and very often requirements of advanced simulation packages, most of the devices have been modelled (lambda = 1.55mum) through separate analyses of the components forming the filters. The study starts with the modelling of rib and strip waveguides aiming at the single-mode and zero-birefringent regime of operation, followed by the analysis of a directional coupler. The modelling suggests that the cross-sectional rectangular area of a strip waveguide should be smaller than 0.10mum2. Similarly, rib waveguides with a height of 1.35mum, and a waveguide width of 0.8mum or 1.0mum, could be used as basic single-mode and zero-birefringent elements for building relatively large rib waveguide based devices. The analysis of a directional coupler on strip waveguides has shown that a near-polarisation-independence regime is possible for waveguide separations below 0.20mum and waveguide widths in range 0.29 - 0.40mum, when a waveguide height is chosen to be 0.29mum or 0.34mum. Simplified z-transform models of filters have been employed to calculate values of the most relevant figures of merit such as Free Spectral Range (FSR), Full Width at Half Maximum (FWHM), Finesse (F) and Q-factor, and also to quantify the sensitivity of the transfer function to the changes of geometric parameters, coupling issues and thermal effects. Based on the modelling and information from test chips of previous students, 4 main designs grouped in 6 test chips have been proposed and fabricated in collaboration with the Intel Corporation Photonics research groups from San Jose and Jerusalem. Two designs were based on rib waveguide type devices and two on strip waveguide type devices. The goals in all cases were; polarisation insensitivity, single-mode behaviour, improvement of the FSR, shaping response by using various geometries, the possibility of tuning response by thermal means etc. Experimental results have shown improvement in the FWHM and FSR as expected for both strip and rib designs. An additional stage of multi-level, serially coupled racetrack resonator in rib waveguides has resulted in a decrease of the FWHM by more than 30% (6pm). Polarisation independence by using identical multiple serial-coupled rib racetracks has also been demonstrated. The FSR above 60nm have been reported for small strip resonators (radius of l.5mum) with good polarisation characteristics for rings which radius is near 3mum. To the author's knowledge this is the largest FSR yet reported for a silicon based ring resonator. There is also improvement of the spectral response of multiple Vernier rings, which, with some corrections in terms of side lobes appearing in the spectrum, may be used for designing devices with the FSR as large as 70nm.
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Ang, Tze Wei. "Optical grating couplers in silicon-on-insulator". Thesis, University of Surrey, 1999. http://epubs.surrey.ac.uk/843726/.

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The aim of this project is to fabricate highly efficient grating couplers in thin-film silicon-on-insulator (SOI) wafers, which have a silicon (Si) thickness of the order of 1 mum. These thin-film waveguides allow the development of higher speed Si optical modulators, sensors and vertical surface coupling for Si light emitting diodes (LEDs), Hence, SOI rectangular and blazed grating couplers were fabricated where the buried oxide layer in SOI was designed as a reflective layer. The former gratings were fabricated by electron beam lithography followed by reactive ion etching, while the latter gratings were fabricated by angled argon ion beam etching. Both types of grating were designed at the diffraction order of -1, for a wavelength of 1.3 mum. The fabricated rectangular gratings have grating heights of 0.14, 0.23, 0.30 and 0.44 mum and a pitch of 0.40 mum whereas the sawtooth blazed gratings have a grating depth of 0.08 mum and a period of 0.38 mum To our knowledge, no Si blazed gratings with a pitch of less than 500 nm have been fabricated before. The SOI rectangular grating couplers yield a maximum output efficiency of 71 +/- 5 % towards the superstrate, while the blazed grating couplers produce an output efficiency of 84 +/- 5 % towards the substrate. These experimental output efficiencies are the highest yet reported in SOI for each grating profile, respectively. In addition, an optical loss of 0.15 +/- 0.05 dB/cm of Unibond SOI was measured for the first time. Furthermore, the experimental output efficiencies of the grating couplers with various grating heights were found to be consistent with perturbation theory. Thus, our aim of designing and fabricating an highly efficient thin film SOI waveguide grating coupler has been achieved. These grating couplers may enhance the applications of integrated optics in Si, and may allow the development of devices such as those mentioned above.
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Johnston, Ian Ronald. "Near-infrared photodetectors and optical interconnects fabricated monolithically on silicon". Thesis, University of Southampton, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241870.

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Książki na temat "Silicon optical waveguides"

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D, Love John, red. Silica-based buried channel waveguides and devices. London: Chapman & Hall, 1996.

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Solehmainen, Kimmo. Fabrication of microphotonic waveguide components on silicon. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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Chen, Eddy G. 157-nm radiation induced bragg gratings in silica optical waveguides. Ottawa: National Library of Canada, 2003.

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Rickman, Andrew George. Silicon on insulator integrated optical waveguides. 1994.

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Glenn, Beheim, i United States. National Aeronautics and Space Administration., red. Calculated coupling efficiency between an elliptical-core optical fiber and a silicon oxynitride rib waveguide. [Washington, DC]: National Aeronautics and Space Administration, 1995.

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Remley, Catherine A. Analysis and modeling of lossy planar optical waveguides and application to silicon-based structures. 1995.

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Ladouceur, F., i J. Love. Silica-Based Buried Channel Waveguides and Devices. Springer, 1995.

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Design and Fabrication of Planar Optical Waveguide Devices and Materials. SPIE Society of Photo-Optical Instrumentation Engi, 2002.

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A, Norwood Robert, i Society of Photo-optical Instrumentation Engineers., red. Design, manufacturing, and testing of planar optical waveguide devices: 1 August 2001, San Diego, USA. Bellingham, Wash: SPIE, 2001.

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A, Norwood Robert, Society of Photo-optical Instrumentation Engineers. i Boeing Company, red. Design and fabrication of planar optical waveguide devices and materials: 8-9 July, 2002, Seattle, Washington, USA. Bellingham, Washington: SPIE, 2002.

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Części książek na temat "Silicon optical waveguides"

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Weiss, Sharon M., i Xing Wei. "Porous Silicon Optical Waveguides". W Handbook of Porous Silicon, 1–8. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04508-5_83-1.

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Weiss, Sharon M., i Xing Wei. "Porous Silicon Optical Waveguides". W Handbook of Porous Silicon, 1–8. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-04508-5_83-2.

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Weiss, Sharon M., i Xing Wei. "Porous Silicon Optical Waveguides". W Handbook of Porous Silicon, 815–22. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05744-6_83.

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Weiss, Sharon M., i Xing Wei. "Porous Silicon Optical Waveguides". W Handbook of Porous Silicon, 1211–18. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_83.

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Van Thourhout, Dries, Wim Bogaerts i Pieter Dunon. "Submicron Silicon Strip Waveguides". W Springer Series in Optical Sciences, 205–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-28912-8_8.

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Tong, Xingcun Colin. "Silicon-on-Insulator Waveguides". W Advanced Materials for Integrated Optical Waveguides, 253–87. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01550-7_6.

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Zanetto, Francesco. "Low-Noise Mixed-Signal Electronics for Closed-Loop Control of Complex Photonic Circuits". W Special Topics in Information Technology, 55–64. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_5.

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AbstractAn increasing research effort is being carried out to profit from the advantages of photonics not only in long-range telecommunications but also at short distances, to implement board-to-board or chip-to-chip interconnections. In this context, Silicon Photonics emerged as a promising technology, allowing to integrate optical devices in a small silicon chip. However, the integration density made possible by Silicon Photonics revealed the difficulty of operating complex optical architectures in an open-loop way, due to their high sensitivity to fabrication parameters and temperature variations. In this chapter, a low-noise mixed-signal electronic platform implementing feedback control of complex optical architectures is presented. The system exploits the ContactLess Integrated Photonic Probe, a non-invasive detector that senses light in silicon waveguides by measuring their electrical conductance. The CLIPP readout resolution has been maximized thanks to the design of a low-noise multichannel ASIC, achieving an accuracy better than −35 dBm in light monitoring. The feedback loop to stabilize the behaviour of photonic circuits is then closed in the digital domain by a custom mixed-signal electronic platform. Experimental demonstrations of optical communications at high data-rate confirm the effectiveness of the proposed approach.
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Le, Trung-Thanh, i Laurence Cahill. "All-Optical Signal Processing Circuits Using Multimode Interference Structures on Silicon Waveguides". W 4G Wireless Communication Networks, 441–69. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003357247-21.

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Steglich, Patrick, Claus Villringer, Silvio Pulwer, Mauro Casalboni i Sigurd Schrader. "Design Optimization of Silicon-on-Insulator Slot-Waveguides for Electro-optical Modulators and Biosensors". W Springer Proceedings in Physics, 173–87. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-30137-2_11.

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Mogensen, Klaus B., Nickolaj J. Petersen, Jörg Hübner i Jörg P. Kutter. "In-Plane UV Absorbance Detection in Silicon-Based Electrophoresis Devices Using Monolithically Integrated Optical Waveguides". W Micro Total Analysis Systems 2001, 280–82. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-1015-3_116.

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Streszczenia konferencji na temat "Silicon optical waveguides"

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Hibino, Yoshinori. "Application of photosensitivity in planar silica-on-silicon optical waveguides". W Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/bgppf.1997.btub.1.

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Planar lightwave circuit (PLC) devices such as splitters, Mach-Zehnder interferometers and arrayed-waveguide grating (AWG) multiplexers, have been developed using GeO2-SiO2 waveguides on Si substrates. Such devices typically have low propagation and fiber-connection losses. Advanced optical communication systems, such as wavelength division multiplexing (WDM) systems, optical switching systems, and optical access networks[1] uses PLC devices. These silica-based planar waveguides are photosensitive[2]. This property can be used to make new types of PLC devices. For instance, photo-induced refractive index changes have been used for trimming the spectral response in the PLCs and forming Bragg gratings in the same way as used for optical fibers [3].
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Goel, Sanjay, i David L. Naylor. "Self-aligning micromachined structures for optical fiber attachment to integrated-optical polymer waveguides". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fd3.

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The coupling of an array of optical fibers with waveguides has become an important technique with the advent of integrated-optical devices and is a key issue in evaluating their manufacturability and reliability. So far, some techniques have been developed for LiNbO3 waveguides.1,2 We have designed structures for the coupling of single-mode optical fibers to polymer-based optical waveguides. A thin layerof polymethyl methacrylate (PMMA) is deposited on top of a silicon wafer coated with silicon dioxide to form a thin-film waveguide. An appropriate choice of cladding can suppress multimode loses in the waveguide by insuring singlemode operation. Matching the refractive indices of the fiber and the waveguide further reduces the reflection loses. The process of micromachining, the wet-chemical an- iosotropic etching of silicon, has been well developed.
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Chang, Chia-Ming, i Olav Solgaard. "Monolithic silicon waveguides in bulk silicon". W 2012 IEEE Optical Interconnects Conference. IEEE, 2012. http://dx.doi.org/10.1109/oic.2012.6224463.

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HENRY, CHARLES H. "Silica on silicon waveguides for integrated optics". W Optical Fiber Communication Conference. Washington, D.C.: OSA, 1989. http://dx.doi.org/10.1364/ofc.1989.thf5.

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Ou, Haiyan, Troels P. Rørdam, Karsten Rottwitt, Flemming Grumsen, Andy Horsewell, Rolf W. Berg, Peixiong Shi, Lionel C. Gontard i Rafal E. Dunin-Borkowski. "Ge nanostructures doped silica-on-silicon waveguides". W Asia-Pacific Optical Communications. SPIE, 2007. http://dx.doi.org/10.1117/12.754562.

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Kawachi, Masao, Morio Kobayashi i Tadashi Miyashita. "Hybrid optical integration with high-silica channel waveguides on silicon". W Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/igwo.1986.fdd5.

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High-silica channel optical waveguides, being compatible with high-silica optical fibers, appear promising for constructing guided-wave optical de vices for practical use.1-3 A hybrid integration of light sources/detectors to high-silica waveguides on silicon substrates for the purpose of realizing an active guided-wave multi/demultiplexer is described.
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Hickernell, F. S., i C. T. Seaton. "Channelized Optical Waveguides On Silicon". W Cambridge Symposium-Fiber/LASE '86, redaktorzy Davis H. Hartman, Robert L. Holman i Doyle P. Skinner. SPIE, 1987. http://dx.doi.org/10.1117/12.965202.

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Shun-Hui Yang, Prabhakar R. Bandaru, Michael L. Cooper, Jung S. Park i Shayan Mookherjea. "Multi-slot silicon optical waveguides". W 2008 Conference on Lasers and Electro-Optics (CLEO). IEEE, 2008. http://dx.doi.org/10.1109/cleo.2008.4551523.

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De Brabander, Gregory N., Joseph T. Boyd i Howard E. Jackson. "Silicon nitride single-polarization optical waveguides on silicon substrates". W Integrated Optical Circuits, redaktor Ka K. Wong. SPIE, 1991. http://dx.doi.org/10.1117/12.50902.

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May, P., S. Basu, G. Chiu i G. Arjavalingam. "Modal Dispersion and Attenuation Measurements of Silicon Nitride and Silicon Oxynitride Waveguides using a Streak Camera". W Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.mee9.

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It is difficult to make accurate measurements of the intrinsic attenuation of optical waveguides. Most methods rely either on monitoring the input and output powers to the waveguide and making some assumption of the coupling losses /1/ or alternatively measuring the scattering losses as a function of distance along the waveguide /2/, and trying to ensure that the collection efficiency of the measuring system remains constant at the different measurement points. For waveguides of low attenuation the difficulties inherent in these techniques are compounded by having to account for reflection at the end of the waveguides. A short pulse travelling in a waveguide undergoes attenuation and intermodal and intramodal dispersion. In the method described in this paper, the data on attenuation and dispersion of optical waveguides on silicon are obtained from a measurement of the short pulse characteristics using a synchroscan streak camera of 10 ps temporal resolution.
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