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Artykuły w czasopismach na temat „Silicon-on-insulator waveguides”

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Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 20 lutego 2023

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1

Schmid, J. H., P. Cheben, S. Janz, J. Lapointe, E. Post, A. Delâge, A. Densmore, B. Lamontagne, P. Waldron i D. X. Xu. "Subwavelength Grating Structures in Silicon-on-Insulator Waveguides". Advances in Optical Technologies 2008 (13.07.2008): 1–8. http://dx.doi.org/10.1155/2008/685489.

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First implementations of subwavelength gratings (SWGs) in silicon-on-insulator (SOI) waveguides are discussed and demonstrated by experiment and simulations. The subwavelength effect is exploited for making antireflective and highly reflective waveguide facets as well as efficient fiber-chip coupling structures. We demonstrate experimentally that by etching triangular SWGs into SOI waveguide facets, the facet power reflectivity can be reduced from 31% to <2.5%. Similar structures using square gratings can also be used to achieve high facet reflectivity. Finite difference time-domain simulations show that >94% facet reflectivity can be achieved with square SWGs for 5 μm thick SOI waveguides. Finally, SWG fiber-chip couplers for SOI photonic wire waveguides are introduced, including design, simulation, and first experimental results.

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2

Feng, Song, i Bin Xue. "Research into Two Photonic-Integrated Waveguides Based on SiGe Material". Materials 13, nr 8 (16.04.2020): 1877. http://dx.doi.org/10.3390/ma13081877.

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SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

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3

Milosevic, Milan, Petar Matavulj i Goran Mashanovich. "Single mode and polarization independence in the strained silicon-on-insulator rib waveguides". Chemical Industry 62, nr 3 (2008): 119–24. http://dx.doi.org/10.2298/hemind0803119m.

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In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of the top oxide cladding stress is analyzed. Field profiles for a wide range of waveguide cross section shapes and dimensions are systematically considered. Design guidelines for this type of SOI waveguides are presented.

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4

MAHDI, SHAIMAA, STEFAN MEISTER, AWS AL-SAADI, BÜLENT A. FRANKE, SHA WANG, HANS J. EICHLER, LARS ZIMMERMANN, TIAN HUI, HARALD H. RICHTER i DAVID STOLAREK. "RAMAN SCATTERING AND GAIN IN SILICON-ON-INSULATOR NANOWIRE WAVEGUIDES". Journal of Nonlinear Optical Physics & Materials 21, nr 02 (czerwiec 2012): 1250021. http://dx.doi.org/10.1142/s021886351250021x.

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Raman scattering in air-covered and SiO2 -covered Silicon-on-insulator waveguides of 1.25 cm length, 220 nm height and two widths of 2 μm or 0.45 μm was investigated. A continuous wave (CW) Raman fiber laser at 1454.8 nm with linewidth of <0.1 nm was used as a pump source. The coupling efficiency was estimated to be around 10% for one end facet. Spontaneous Raman shift of 521 cm-1 (1574.2 THz) scattering was observed at 1573.8 nm for SOI waveguides in air and 1574.2 nm for waveguides covered with SiO2 at pump power of <1.5 mW inside both waveguides of 2 and 0.45 μm. Anti-Stokes scattering was observed at 1352.8 nm with pump power of 16 mW. The stimulated Raman gain was calculated from spontaneous Raman efficiency. Total Raman on-off gain was determined to be 0.6 dB for waveguide with width of 2 μm and 1 dB for waveguide with width of 0.45 μm.

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5

Khaleefia, Zainab Salam, Sh S. Mahdi i S. Kh Yaseen. "Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides". Iraqi Journal of Physics (IJP) 18, nr 45 (30.05.2020): 9–20. http://dx.doi.org/10.30723/ijp.v18i45.507.

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Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.

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6

Cammarata, Simone, Andrea Fontana, Ali Emre Kaplan, Samuele Cornia, Thu Ha Dao, Cosimo Lacava, Valeria Demontis i in. "Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides". Materials 15, nr 24 (7.12.2022): 8739. http://dx.doi.org/10.3390/ma15248739.

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We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.

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7

Soref, R. A., E. Cortesi, F. Namavar i L. Friedman. "Vertically integrated silicon-on-insulator waveguides". IEEE Photonics Technology Letters 3, nr 1 (styczeń 1991): 22–24. http://dx.doi.org/10.1109/68.68036.

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8

Song, Q., F. Qian, E. K. Tien, I. Tomov, J. Meyer, X. Z. Sang i O. Boyraz. "Imaging by silicon on insulator waveguides". Applied Physics Letters 94, nr 23 (8.06.2009): 231101. http://dx.doi.org/10.1063/1.3141480.

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9

S., Prasanna Kumaar, i Sivasubramanian A. "Optimization of the Transverse Electric Photonic Strip Waveguide Biosensor for Detecting Diabetes Mellitus from Bulk Sensitivity". Journal of Healthcare Engineering 2021 (26.11.2021): 1–8. http://dx.doi.org/10.1155/2021/6081570.

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Diabetes mellitus is a chronic metabolic condition that affects millions of people worldwide. The present paper investigates the bulk sensitivity of silicon and silicon nitride strip waveguides in the transverse electric (TE) mode. At 1550 nm wavelength, silicon on insulator (SOI) and silicon nitride (Si3N4) are two distinct waveguides of the same geometry structure that can react to refractive changes around the waveguide surface. This article examines the response of two silicon-based waveguide structures to the refractive index of urine samples (human renal fluids) to diagnose diabetes mellitus. An asymmetric Mach–Zehnder interferometer has waveguide sensing and a reference arm with a device that operates in the transverse electric (TE) mode. 3D FDTD simulated waveguide width 800 nm, thickness 220 nm, and analyte thickness 130 nm give the bulk sensitivity of 1.09 (RIU/RIU) and 1.04 (RIU/RIU) for silicon and silicon nitride, respectively, high compared to the regular transverse magnetic (TM) mode strip waveguides. Furthermore, the proposed design gives simple fabrication, contrasting sharply with the state-of-the-art 220 nm wafer technology.

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10

Tran, Minh, Duanni Huang, Tin Komljenovic, Jonathan Peters, Aditya Malik i John Bowers. "Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics". Applied Sciences 8, nr 7 (13.07.2018): 1139. http://dx.doi.org/10.3390/app8071139.

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Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an ultra-low-loss silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

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11

Thanh Le, Trung. "The Design of Optical Signal Transforms Based on Planar Waveguides on a Silicon on Insulator Platform". International Journal of Engineering and Technology 2, nr 3 (2010): 245–51. http://dx.doi.org/10.7763/ijet.2010.v2.128.

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12

Brooks, Chris. "Passive silicon-on-insulator polarization-rotating waveguides". Optical Engineering 45, nr 4 (1.04.2006): 044603. http://dx.doi.org/10.1117/1.2188408.

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13

Hochberg, Michael, Tom Baehr-Jones, Chris Walker, Jeremy Witzens, Lawrence C. Gunn i Axel Scherer. "Segmented waveguides in thin silicon-on-insulator". Journal of the Optical Society of America B 22, nr 7 (1.07.2005): 1493. http://dx.doi.org/10.1364/josab.22.001493.

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14

Li, Xuefeng, Zhaolu Wang i Hongjun Liu. "The Coupled Nonlinear Schrödinger Equations Describing Power and Phase for Modeling Phase-Sensitive Parametric Amplification in Silicon Waveguides". Journal of Applied Mathematics 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/621751.

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The coupled nonlinear Schrödinger (NLS) equations describing power and phase of the optical waves are used to model phase-sensitive (PS) parametric amplification in a width-modulated silicon-on-insulator (SOI) channel waveguide. Through solving the coupled NLS equations by the split-step Fourier and Runge-Kutta integration methods, the numerical results show that the coupled NLS equations can perfectly describe and character the PS amplification process in silicon waveguides.

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15

Cooper, Michael L., Greeshma Gupta, Mark A. Schneider, William M. J. Green, Solomon Assefa, Fengnian Xia, Dawn K. Gifford i Shayan Mookherjea. "Waveguide dispersion effects in silicon-on-insulator coupled-resonator optical waveguides". Optics Letters 35, nr 18 (3.09.2010): 3030. http://dx.doi.org/10.1364/ol.35.003030.

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16

Le, Thanh Trung. "OPTIMIZED DESIGN OF MMI COUPLERS BASED MICRORESONATORS". Science and Technology Development Journal 12, nr 13 (15.07.2009): 19–27. http://dx.doi.org/10.32508/stdj.v12i13.2325.

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This paper presents an optimized design for racetrack resonators based on Multimode Interference (MMI) couplers on the silicon on insulator (SOI) platform. The design approach takes into account the effects of bend and transition losses within the racetrack waveguide. For the first time, new positions and geometries of access waveguides are suggested and optimized to improve device performance.

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17

Bondarenko, Siegfried, Claus Villringer i Patrick Steglich. "Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding". Applied Sciences 9, nr 1 (27.12.2018): 89. http://dx.doi.org/10.3390/app9010089.

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Nonlinear optical dyes doped in optical polymer matrices are widely used for electro-optical devices. Linear optical properties change with dye concentration, which leads to a change in modal properties, especially in nano-structured integrated waveguides such as silicon slot-waveguides. Here, we investigate the influence of a nonlinear optical dye on the performance of a silicon-organic hybrid slot-waveguide. A simulation study of the modal and optical confinement properties is carried out and dependence of the structural parameters of the slot-waveguide and the organic cladding material is taken into account. As cladding material, a guest-host polymer system is employed comprising the nonlinear optical dye Disperse Red 1 (DR1) doped in a poly[methyl methacrylate] (PMMA) matrix. The refractive indices of doped and undoped PMMA were deduced from ellipsometric data. We present a guideline for an optimized slot-waveguide design for the fabrication in silicon-on-insulator technology giving rise to scalable, high-performance integrated electro-optical modulators.

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18

Shang, Hongpeng, Degui Sun, Peng Yu, Bin Wang, Ting Yu, Tiancheng Li i Huilin Jiang. "Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy". Coatings 10, nr 3 (4.03.2020): 236. http://dx.doi.org/10.3390/coatings10030236.

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Sidewall roughness-caused optical loss of waveguides is one of the critical limitations to the proliferation of the silicon photonic integrated circuits in fiber-optic communications and optical interconnects in computers, so it is imperative to investigate the distribution characteristics of sidewall roughness and its impact upon the optical losses. In this article, we investigated the distribution properties of waveguide sidewall roughness (SWR) with the analysis for the three-dimensional (3-D) SWR of dielectric waveguides, and, then the accurate SWR measurements for silicon-on-insulator (SOI) waveguide were carried out with confocal laser scanning microscopy (CLSM). Further, we composed a theoretical/experimental combinative model of the SWR-caused optical propagation loss. Consequently, with the systematic simulations for the characteristics of optical propagation loss of SOI waveguides, the two critical points were found: (i) the sidewall roughness-caused optical loss was synchronously dependent on the correlation length and the waveguide width in addition to the SWR and (ii) the theoretical upper limit of the correlation length was the bottleneck to compressing the roughness-induced optical loss. The simulation results for the optical loss characteristics, including the differences between the TE and TM modes, were in accord with the experimental data published in the literature. The above research outcomes are very sustainable to the selection of coatings before/after the SOI waveguide fabrication.

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19

Sun, Siwei, Ying Chen, Yu Sun, Fengman Liu i Liqiang Cao. "Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides". Photonics 8, nr 3 (16.03.2021): 79. http://dx.doi.org/10.3390/photonics8030079.

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Fiber-to-chip optical interconnects is a big challenge in silicon photonics application scenarios such as data centers and optical transmission systems. An edge coupler, compared to optical grating, is appealing to in the application of silicon photonics due to the high coupling efficiency between standard optical fibers (SMF-28) and the sub-micron silicon wire waveguides. In this work, we proposed a novel fiber–chip edge coupler approach with a large mode size for silicon photonic wire waveguides. The edge coupler consists of a multiple structure which was fulfilled by multiple silicon nitride layers embedded in SiO2 upper cladding, curved waveguides and two adiabatic spot size converter (SSC) sections. The multiple structure can allow light directly coupling from large mode size fiber-to-chip coupler, and then the curved waveguides and SSCs transmit the evanescent field to a 220 nm-thick silicon wire waveguide based on the silicon-on-insulator (SOI) platform. The edge coupler, designed for a standard SMF-28 fiber with 8.2 μm mode field diameter (MFD) at a wavelength of 1550 nm, exhibits a mode overlap efficiency exceeding 95% at the chip facet and the overall coupling exceeding 90%. The proposed edge coupler is fully compatible with standard microfabrication processes.

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20

Arentoft, J., T. Søndergaard, M. Kristensen, A. Boltasseva, M. Thorhauge i L. Frandsen. "Low-loss silicon-on-insulator photonic crystal waveguides". Electronics Letters 38, nr 6 (2002): 274. http://dx.doi.org/10.1049/el:20020188.

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21

Hainberger, Rainer. "Structural Optimization of Silicon-On-Insulator Slot Waveguides". IEEE Photonics Technology Letters 18, nr 24 (grudzień 2006): 2557–59. http://dx.doi.org/10.1109/lpt.2006.886974.

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22

Patrini, M., M. Galli, F. Marabelli, M. Agio, L. C. Andreani, D. Peyrade i Y. Chen. "Photonic bands in patterned silicon-on-insulator waveguides". IEEE Journal of Quantum Electronics 38, nr 7 (lipiec 2002): 885–90. http://dx.doi.org/10.1109/jqe.2002.1017602.

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23

Liang, T. K., i H. K. Tsang. "Efficient Raman amplification in silicon-on-insulator waveguides". Applied Physics Letters 85, nr 16 (18.10.2004): 3343–45. http://dx.doi.org/10.1063/1.1807960.

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24

Shi, W., X. Wang, W. Zhang, L. Chrostowski i N. A. F. Jaeger. "Contradirectional couplers in silicon-on-insulator rib waveguides". Optics Letters 36, nr 20 (5.10.2011): 3999. http://dx.doi.org/10.1364/ol.36.003999.

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25

Sheng, Zhen, Liu Liu, Joost Brouckaert, Sailing He i Dries Van Thourhout. "InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides". Optics Express 18, nr 2 (14.01.2010): 1756. http://dx.doi.org/10.1364/oe.18.001756.

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26

Giuntoni, Ivano, Andrzej Gajda, Michael Krause, Ralf Steingrüber, Jürgen Bruns i Klaus Petermann. "Tunable Bragg reflectors on silicon-on-insulator rib waveguides". Optics Express 17, nr 21 (29.09.2009): 18518. http://dx.doi.org/10.1364/oe.17.018518.

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27

Wen, Jin. "Pulse evolution in mid-infrared femtosecond optical parametric oscillator based on silicon-on-insulator waveguides". Modern Physics Letters B 30, nr 11 (29.04.2016): 1650163. http://dx.doi.org/10.1142/s0217984916501633.

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The pulse evolution of mid-infrared optical parametric oscillator based on silicon-on-insulator (SOI) waveguides is numerically investigated. The properties of pulse evolution in the process of optical parametric oscillation have been described. The numerical results show that the threshold of the optical parametric oscillation cavity can be lowered due to the high nonlinearity of the waveguide. The parametric signals initiate to oscillate when the circle trip number is 5 with the appropriate length of the SOI waveguide 7 mm. Meanwhile the peak power of the output signal pulse can be reached to 400 W at the stable situation when the circle trip number is over 10 with the conversion efficiency as high as 5%. This research can supply a kind of way to generate the mid-infrared femtosecond pulse at the highly stable on-chip integration level.

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28

Goldring, Damian, Evgeny Alperovich, Uriel Levy i David Mendlovic. "Analysis of waveguide-splitter-junction in high-index Silicon-On-Insulator waveguides". Optics Express 13, nr 8 (2005): 2931. http://dx.doi.org/10.1364/opex.13.002931.

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29

Nielsen, M. P., A. Ashfar, K. Cadien i A. Y. Elezzabi. "Plasmonic materials for metal–insulator–semiconductor–insulator–metal nanoplasmonic waveguides on silicon-on-insulator platform". Optical Materials 36, nr 2 (grudzień 2013): 294–98. http://dx.doi.org/10.1016/j.optmat.2013.09.011.

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30

Pergande, Daniel, i Ralf B. Wehrspohn. "Losses and group index dispersion in insulator-on-silicon-on-insulator ridge waveguides". Optics Express 18, nr 5 (22.02.2010): 4590. http://dx.doi.org/10.1364/oe.18.004590.

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31

Sanchis, Pablo, Pablo Villalba, Francisco Cuesta, Andreas Håkansson, Amadeu Griol, José V. Galán, Antoine Brimont i Javier Martí. "Highly efficient crossing structure for silicon-on-insulator waveguides". Optics Letters 34, nr 18 (9.09.2009): 2760. http://dx.doi.org/10.1364/ol.34.002760.

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32

Koster, Alain, Eric Cassan, Suzanne Laval, Laurent Vivien i Daniel Pascal. "Ultracompact splitter for submicrometer silicon-on-insulator rib waveguides". Journal of the Optical Society of America A 21, nr 11 (1.11.2004): 2180. http://dx.doi.org/10.1364/josaa.21.002180.

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33

Espinola, Richard L., Jerry I. Dadap, Richard M. Osgood, Jr., Sharee J. McNab i Yurii A. Vlasov. "Raman amplification in ultrasmall silicon-on-insulator wire waveguides". Optics Express 12, nr 16 (2004): 3713. http://dx.doi.org/10.1364/opex.12.003713.

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34

Ma, Minglei, Zhitian Chen, Han Yun, Yun Wang, Xu Wang, Nicolas A. F. Jaeger i Lukas Chrostowski. "Apodized Spiral Bragg Grating Waveguides in Silicon-on-Insulator". IEEE Photonics Technology Letters 30, nr 1 (1.01.2018): 111–14. http://dx.doi.org/10.1109/lpt.2017.2777824.

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35

Gad, M. A., J. H. Evans-Freeman, N. Cinosi i J. Sarma. "Loss measurements of ER-doped silicon-on-insulator waveguides". Materials Science and Engineering: B 105, nr 1-3 (grudzień 2003): 79–82. http://dx.doi.org/10.1016/j.mseb.2003.08.020.

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36

Hussain, Ashiq, Xinzhu Sang, Chongxiu Yu, Bo Liu i Freeha. "Active and Passive Devices Based on Silicon-on-Insulator Waveguides". Recent Patents on Engineering 5, nr 1 (1.04.2011): 68–79. http://dx.doi.org/10.2174/1872212111105010068.

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37

Yan-Ping, Li, Yang Di, Sun Fei, Chen Shao-Wu i Yu Jin-Zhong. "Thermo-optical Switch Matrix Based on Silicon-on-Insulator Waveguides". Chinese Physics Letters 22, nr 3 (24.02.2005): 621–23. http://dx.doi.org/10.1088/0256-307x/22/3/028.

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38

Shahraki, Mojtaba, i Farzin Emami. "Polarization effects on modulation instability of silicon on insulator waveguides". Journal of Nanophotonics 10, nr 2 (19.04.2016): 026006. http://dx.doi.org/10.1117/1.jnp.10.026006.

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Butt, Muhammad Ali, i Nikolai Lvovich Kazansky. "SOI Suspended membrane waveguide at 3.39 µm for gas sensing application". Photonics Letters of Poland 12, nr 2 (1.07.2020): 67. http://dx.doi.org/10.4302/plp.v12i2.1034.

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In this letter, we present a numerical study on the designing of silicon-on-insulator (SOI) suspended membrane waveguide (SMW). The waveguide geometry is optimized at 3.39 µm TE-polarized light which is the absorption line of methane gas by utilizing a 3D finite element method (FEM). The transmission loss (TL) and evanescent field ratio (EFR) of the waveguide are calculated for different geometric parameters such as the width of core, the height of core and period of the cladding. We found out that TL is directly related to EFR. Therefore, a waveguide geometry can be designed which can offer high EFR at the cost of high TL or low EFR with low TL, as desired. Based on the geometric parameters used in this paper, we have obtained a TL and EFR which lies in the range of 1.54 dB-3.37 dB and 0.26-0.505, respectively. Full Text: PDF ReferencesL. Vivien et al., "High speed silicon-based optoelectronic devices on 300mm platform", 2014 16th International conference on transparent optical networks (ICTON), Graz, 2014, pp. 1-4, CrossRef Y. Zou, S. Chakravarty, "Mid-infrared silicon photonic waveguides and devices [Invited]", Photonic Research, 6(4), 254-276 (2018). CrossRef J.S. Penades et al., "Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared", Optics letters, 39(19), 5661-5664 (2014). CrossRef T. Baehr-Jones, A. Spott, R. Ilic, A. Spott, B. Penkov, W. Asher, and M. Hochberg, "Silicon-on-sapphire integrated waveguides for the mid-infrared", Opt. Express, 18(12),12127-12135 (2010). CrossRef J. Mu, R. Soref, L. C. Kimerling, and J. Michel, "Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding", Appl. Phys. Lett., 104(3), 031115 (2014). CrossRef J.S. Penades et al., "Suspended silicon waveguides for long-wave infrared wavelengths", Optics letters, 43 (4), 795-798 (2018). CrossRef J.S. Penades et al., "Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding", Optics Express, 24, (20), 22908-22916 (2016). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Modelling of Rib channel waveguides based on silicon-on-sapphire at 4.67 μm wavelength for evanescent field gas absorption sensor", Optik, 168, 692-697 (2018). CrossRef S.N. Khonina, N.L. Kazanskiy, M.A. Butt, "Evanescent field ratio enhancement of a modified ridge waveguide structure for methane gas sensing application", IEEE Sensors Journal CrossRef M.A. Butt, S.A. Degtyarev, S.N. Khonina, N.L. Kazanskiy, "An evanescent field absorption gas sensor at mid-IR 3.39 μm wavelength", Journal of Modern Optics, 64(18), 1892-1897 (2017). CrossRef S. Zampolli et al., "Selectivity enhancement of metal oxide gas sensors using a micromachined gas chromatographic column", Sensors and Actuators B Chemical, 105 (2), 400-406 (2005). CrossRef N. Dossi, R. Toniolo, A. Pizzariello, E. Carrilho, E. Piccin, S. Battiston, G. Bontempelli, "An electrochemical gas sensor based on paper supported room temperature ionic liquids", Lab Chip, 12 (1), 153-158 (2011). CrossRef V. Avetisov, O. Bjoroey, J. Wang, P. Geiser, K. G. Paulsen, "Hydrogen Sensor Based on Tunable Diode Laser Absorption Spectroscopy", Sensors, 19 (23), 5313 (2019). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor", Journal of Modern Optics, 65(2), 174-178 (2018). CrossRef Nikolay Lvovich Kazanskiy, Svetlana Nikolaevna Khonina, Muhammad Ali Butt, "Subwavelength Grating Double Slot Waveguide Racetrack Ring Resonator for Refractive Index Sensing Application", Sensors, 20, 3416 (2020). CrossRef H. Tai, H. Tanaka, T. Yoshino, "Fiber-optic evanescent-wave methane-gas sensor using optical absorption for the 3.392-μm line of a He–Ne laser", Opt. Lett., 12, 437-439 (1987). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Hybrid plasmonic waveguide-assisted Metal–Insulator–Metal ring resonator for refractive index sensing", Journal of Modern Optics, 65(9), 1135-1140 (2018). CrossRef S.A. Degtyarev, M.A. Butt, S.N. Khonina, R.V. Skidanov, "Modelling of TiO2 based slot waveguides with high optical confinement in sharp bends", 2016 International Conference on Computing, Electronic and Electrical Engineering, ICE Cube, Quetta, 2016, 10-13 CrossRef

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Liu, Yan, i Jinzhong Yu. "Low-loss coupler between fiber and waveguide based on silicon-on-insulator slot waveguides". Applied Optics 46, nr 32 (5.11.2007): 7858. http://dx.doi.org/10.1364/ao.46.007858.

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MAHDI, SHAIMAA, MORITZ GREHN, AWS AL-SAADI, MICHAEL HÖFNER, STEFAN MEISTER i HANS J. EICHLER. "FACET PREPARATION OF SILICON NANO-WAVEGUIDES BY CLEAVING THE SOI CHIP". Journal of Nonlinear Optical Physics & Materials 20, nr 04 (grudzień 2011): 509–23. http://dx.doi.org/10.1142/s0218863511006315.

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Optical facet preparation of silicon-on-insulator (SOI) waveguides was done by polishing after saw dicing or cleaving after two different techniques of scoring by a mechanical saw and fs-laser. Cleaving after fs-laser scoring leads to smooth facet surface of air covered SOI waveguides; polishing after dicing is more efficient with SiO2covered waveguides. The prepared end facets were investigated using an atomic force microscope (AFM) and scanning electron microscopy (SEM). The SOI waveguides were characterized by optical transmission of telecommunication wavelength (1.5 μm).

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Stanton, Eric, Alexander Spott, Jon Peters, Michael Davenport, Aditya Malik, Nicolas Volet, Junqian Liu i in. "Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers". Photonics 6, nr 1 (24.01.2019): 6. http://dx.doi.org/10.3390/photonics6010006.

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Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed feedback (DFB) and distributed Bragg-reflection (DBR) quantum cascade lasers (QCLs) emitting at ∼4.7 µm wavelength are coupled to AWGs on the same chip. Low-loss spectral beam combining allows for brightness scaling by coupling the light generated by multiple input QCLs into the fundamental mode of a single output waveguide. Promising results are demonstrated and further improvements are in progress. This device can lead to compact and sensitive chemical detection systems using absorption spectroscopy across a broad spectral range in the mid-IR as well as a high-brightness multi-spectral source for power scaling.

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Yu, Ting, i DeGui Sun. "Thermodynamic insights into Henry's constant in hyperthermal oxidation of silicon for fabricating optical waveguides". Physical Chemistry Chemical Physics 23, nr 32 (2021): 17354–64. http://dx.doi.org/10.1039/d1cp01993g.

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Hyperthermal oxidation of silicon is envisaged to be an alternative to silicon-on-insulator (SOI) waveguide fabrication for photonic integrated circuit (PIC) devices, and thus the local oxidation of silicon (LOCOS) technique has attracted attention.

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Kang, JoonHyun, Yuki Atsumi, Manabu Oda, Tomohiro Amemiya, Nobuhiko Nishiyama i Shigehisa Arai. "Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate". Japanese Journal of Applied Physics 50, nr 12R (1.12.2011): 120208. http://dx.doi.org/10.7567/jjap.50.120208.

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Kang, JoonHyun, Yuki Atsumi, Manabu Oda, Tomohiro Amemiya, Nobuhiko Nishiyama i Shigehisa Arai. "Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate". Japanese Journal of Applied Physics 50 (28.11.2011): 120208. http://dx.doi.org/10.1143/jjap.50.120208.

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Zhang, Yuning, Jiayang Wu, Yunyi Yang, Yang Qu, Linnan Jia, Baohua Jia i David J. Moss. "Enhanced Spectral Broadening of Femtosecond Optical Pulses in Silicon Nanowires Integrated with 2D Graphene Oxide Films". Micromachines 13, nr 5 (11.05.2022): 756. http://dx.doi.org/10.3390/mi13050756.

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We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses after propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI nanowires with precise control of the film thickness. Detailed SPM measurements using femtosecond optical pulses are carried out, achieving a broadening factor of up to ~4.3 for a device with 0.4-mm-long, 2 layers of GO. By fitting the experimental results with the theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of ~3.5 and in the effective nonlinear figure of merit (FOM) by a factor of ~3.8, relative to the uncoated waveguide. Finally, we discuss the influence of GO film length on the spectral broadening and compare the nonlinear optical performance of different integrated waveguides coated with GO films. These results confirm the improved nonlinear optical performance of silicon devices integrated with 2D GO films.

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Kutluyarov, R. V., D. M. Fatkhiev, I. V. Stepanov, E. P. Grakhova, V. S. Lyubopytov i A. Kh Sultanov. "Design and modeling of a photonic integrated device for optical vortex generation in a silicon waveguide". Computer Optics 45, nr 3 (czerwiec 2021): 324–30. http://dx.doi.org/10.18287/2412-6179-co-850.

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We propose and numerically verify a design of the photonic integrated circuit for in-plane generation of a 1st azimuthal order vortex mode in dielectric rectangular waveguides. Radiation is introduced into the proposed structure in a standard way through two grating couplers. Applying a mode coupling and specific phase shift, a field with the required amplitude-phase distribution is formed directly in the output waveguide. The geometric dimensions of the device are simulated and optimized to fit the technological parameters of the silicon-on-insulator platform.

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Mohammed, Zakriya, Bruna Paredes i Mahmoud Rasras. "Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides". Applied Sciences 11, nr 5 (7.03.2021): 2366. http://dx.doi.org/10.3390/app11052366.

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The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse electric (TE) modes occurs when light is propagated in a waveguide taper. Such a conversion is due to mode hybridization resulting from the vertical asymmetry of the cross-section in the ridge waveguides. The influence of angled sidewalls and asymmetric cladding on mode conversion is also studied. It is shown that a very long taper length (adiabatic) is required for a complete conversion to take place. Conversely, such mode conversion could be suppressed by designing a short non-adiabatic taper. Our results show that significant improvement in performance metrics can be achieved by considering process parameters’ effect on mode conversion. With an optimum selection of the etching depth and accounting asymmetries due to angled sidewalls and cladding, we demonstrate an 84.7% reduction in taper length (adiabatic) for mode conversion and a 97% efficiency TM preserving taper (ultra-short). The analysis is essential for applications such as compact polarizers, polarization splitters/rotators, and tapers for TM devices.

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Fan, Guofang, Regis Orobtchouk, Bing Han, Yuan Li, Chunguang Hu, Lihua Lei, Hongyu Li, Ling Xu i Qi Wang. "Optical Waveguides on Three Material Platforms of Silicon-on-Insulator, Amorphous Silicon and Silicon Nitride". IEEE Journal of Selected Topics in Quantum Electronics 22, nr 6 (listopad 2016): 225–31. http://dx.doi.org/10.1109/jstqe.2015.2494681.

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Yang, Weijian, James Ferrara, Karen Grutter, Anthony Yeh, Chris Chase, Yang Yue, Alan E. Willner, Ming C. Wu i Connie J. Chang-Hasnain. "Low loss hollow-core waveguide on a silicon substrate". Nanophotonics 1, nr 1 (1.07.2012): 23–29. http://dx.doi.org/10.1515/nanoph-2012-0003.

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AbstractOptical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

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