Gotowe bibliografie tematyczne / Silicon-on-insulator waveguides

Gotowa bibliografia na temat „Silicon-on-insulator waveguides”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 20 lutego 2023

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Artykuły w czasopismach na temat "Silicon-on-insulator waveguides"

Schmid, J. H., P. Cheben, S. Janz, J. Lapointe, E. Post, A. Delâge, A. Densmore, B. Lamontagne, P. Waldron i D. X. Xu. "Subwavelength Grating Structures in Silicon-on-Insulator Waveguides". Advances in Optical Technologies 2008 (13.07.2008): 1–8. http://dx.doi.org/10.1155/2008/685489.

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First implementations of subwavelength gratings (SWGs) in silicon-on-insulator (SOI) waveguides are discussed and demonstrated by experiment and simulations. The subwavelength effect is exploited for making antireflective and highly reflective waveguide facets as well as efficient fiber-chip coupling structures. We demonstrate experimentally that by etching triangular SWGs into SOI waveguide facets, the facet power reflectivity can be reduced from 31% to <2.5%. Similar structures using square gratings can also be used to achieve high facet reflectivity. Finite difference time-domain simulations show that >94% facet reflectivity can be achieved with square SWGs for 5 μm thick SOI waveguides. Finally, SWG fiber-chip couplers for SOI photonic wire waveguides are introduced, including design, simulation, and first experimental results.

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Feng, Song, i Bin Xue. "Research into Two Photonic-Integrated Waveguides Based on SiGe Material". Materials 13, nr 8 (16.04.2020): 1877. http://dx.doi.org/10.3390/ma13081877.

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SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

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Milosevic, Milan, Petar Matavulj i Goran Mashanovich. "Single mode and polarization independence in the strained silicon-on-insulator rib waveguides". Chemical Industry 62, nr 3 (2008): 119–24. http://dx.doi.org/10.2298/hemind0803119m.

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In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of the top oxide cladding stress is analyzed. Field profiles for a wide range of waveguide cross section shapes and dimensions are systematically considered. Design guidelines for this type of SOI waveguides are presented.

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MAHDI, SHAIMAA, STEFAN MEISTER, AWS AL-SAADI, BÜLENT A. FRANKE, SHA WANG, HANS J. EICHLER, LARS ZIMMERMANN, TIAN HUI, HARALD H. RICHTER i DAVID STOLAREK. "RAMAN SCATTERING AND GAIN IN SILICON-ON-INSULATOR NANOWIRE WAVEGUIDES". Journal of Nonlinear Optical Physics & Materials 21, nr 02 (czerwiec 2012): 1250021. http://dx.doi.org/10.1142/s021886351250021x.

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Raman scattering in air-covered and SiO2 -covered Silicon-on-insulator waveguides of 1.25 cm length, 220 nm height and two widths of 2 μm or 0.45 μm was investigated. A continuous wave (CW) Raman fiber laser at 1454.8 nm with linewidth of <0.1 nm was used as a pump source. The coupling efficiency was estimated to be around 10% for one end facet. Spontaneous Raman shift of 521 cm-1 (1574.2 THz) scattering was observed at 1573.8 nm for SOI waveguides in air and 1574.2 nm for waveguides covered with SiO2 at pump power of <1.5 mW inside both waveguides of 2 and 0.45 μm. Anti-Stokes scattering was observed at 1352.8 nm with pump power of 16 mW. The stimulated Raman gain was calculated from spontaneous Raman efficiency. Total Raman on-off gain was determined to be 0.6 dB for waveguide with width of 2 μm and 1 dB for waveguide with width of 0.45 μm.

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Khaleefia, Zainab Salam, Sh S. Mahdi i S. Kh Yaseen. "Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides". Iraqi Journal of Physics (IJP) 18, nr 45 (30.05.2020): 9–20. http://dx.doi.org/10.30723/ijp.v18i45.507.

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Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.

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Cammarata, Simone, Andrea Fontana, Ali Emre Kaplan, Samuele Cornia, Thu Ha Dao, Cosimo Lacava, Valeria Demontis i in. "Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides". Materials 15, nr 24 (7.12.2022): 8739. http://dx.doi.org/10.3390/ma15248739.

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We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.

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Soref, R. A., E. Cortesi, F. Namavar i L. Friedman. "Vertically integrated silicon-on-insulator waveguides". IEEE Photonics Technology Letters 3, nr 1 (styczeń 1991): 22–24. http://dx.doi.org/10.1109/68.68036.

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Song, Q., F. Qian, E. K. Tien, I. Tomov, J. Meyer, X. Z. Sang i O. Boyraz. "Imaging by silicon on insulator waveguides". Applied Physics Letters 94, nr 23 (8.06.2009): 231101. http://dx.doi.org/10.1063/1.3141480.

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S., Prasanna Kumaar, i Sivasubramanian A. "Optimization of the Transverse Electric Photonic Strip Waveguide Biosensor for Detecting Diabetes Mellitus from Bulk Sensitivity". Journal of Healthcare Engineering 2021 (26.11.2021): 1–8. http://dx.doi.org/10.1155/2021/6081570.

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Diabetes mellitus is a chronic metabolic condition that affects millions of people worldwide. The present paper investigates the bulk sensitivity of silicon and silicon nitride strip waveguides in the transverse electric (TE) mode. At 1550 nm wavelength, silicon on insulator (SOI) and silicon nitride (Si3N4) are two distinct waveguides of the same geometry structure that can react to refractive changes around the waveguide surface. This article examines the response of two silicon-based waveguide structures to the refractive index of urine samples (human renal fluids) to diagnose diabetes mellitus. An asymmetric Mach–Zehnder interferometer has waveguide sensing and a reference arm with a device that operates in the transverse electric (TE) mode. 3D FDTD simulated waveguide width 800 nm, thickness 220 nm, and analyte thickness 130 nm give the bulk sensitivity of 1.09 (RIU/RIU) and 1.04 (RIU/RIU) for silicon and silicon nitride, respectively, high compared to the regular transverse magnetic (TM) mode strip waveguides. Furthermore, the proposed design gives simple fabrication, contrasting sharply with the state-of-the-art 220 nm wafer technology.

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Tran, Minh, Duanni Huang, Tin Komljenovic, Jonathan Peters, Aditya Malik i John Bowers. "Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics". Applied Sciences 8, nr 7 (13.07.2018): 1139. http://dx.doi.org/10.3390/app8071139.

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Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an ultra-low-loss silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

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Rozprawy doktorskie na temat "Silicon-on-insulator waveguides"

Rickman, Andrew George. "Silicon on insulator integrated optical waveguides". Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/843104/.

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This research project explored the potential of forming an integrated optics technology based on silicon core waveguides suitable for application in sensors and communications in the wavelength range 1.2 to 1.6 mum. Integrated optics has evolved around the use of compounds such as lithium niobate and III-V semiconductors due to their available electro-optic properties. By contrast silicon has received relatively little attention as its indirect band gap has prevented the fabrication of light sources in the material and its centrosymmetric crystal structure means that it has no useful linear electro-optic effect. The lack of a demonstrated low loss integrated optical waveguide compatible with single mode optical fibres has been a further limitation. However, these major drawbacks in silicon waveguide technology may be more than offset by the potential advantages of forming silicon integrated optical devices using well established silicon microelectronics fabrication methods. The project focused research on waveguiding in silicon-on-insulator (SOI) structures with the aim of developing a practical low loss waveguide in these structures and understanding the various loss mechanisms. In principle the optical absorption of pure crystalline silicon over the wavelength range of interest allows waveguides with losses less than 0.1 dB/cm to be formed. SOI material formed by ion implantation has been developed for microelectronic applications and provides a commercial source of a silicon planar waveguide structure with high quality interfaces and low defect density. The project studied waveguides based on this material. Initially planar waveguides with silicon thickness from 0.57 to 7.3 microns and buried oxide thickness of 0.07 to 0.4 microns were studied. Fabrication methods and structures were identified which allowed multi-microns planar SOI waveguides to be formed with losses less than the benchmark of 1 dB/cm. For these structures a buried oxide thickness of 0.4 microns was found to be sufficient to prevent substrate leakage loss. It has been concluded that the predominate loss mechanism is scattering of light at the silicon to buried oxide interface. Rib waveguides were formed in SOI following the insight into loss mechanisms gained in the planar waveguide studies. Optical rib waveguides with widths from 2.73 to 7.73 microns were formed in SIMOX (Separation by IMplantation of OXygen) based SOI structures consisting of a 4.32 micron thick surface silicon layer and a 0.398 micron buried oxide layer. The effect of waveguide width, bend radius, Y-junction splitting and interface roughness on loss and mode characteristics were studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single mode waveguides even though planar SOI waveguides of similar multi-micron dimension are multimode. The propagation losses of waveguides 3.72 microns wide were found to be 0.0 dB/cm and 0.4 dB/cm for the TE and TM modes respectively when measured at 1.523 microns. The measurement uncertainty was estimated to be +/-0.5 dB/cm. These results are thought to be the lowest loss measurements for silicon integrated optical waveguides reported to date. During the course of the project other researchers have demonstrated useful electro-optic properties in silicon semiconductor junctions based on the free carrier plasma dispersion effect and room temperature electroluminescence in silicon based junctions. The combination of these developments with the practical waveguide structure demonstrated in this project now makes the possibility of developing a practical silicon based integrated optics technology a reality.

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Ang, Tze Wei. "Optical grating couplers in silicon-on-insulator". Thesis, University of Surrey, 1999. http://epubs.surrey.ac.uk/843726/.

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The aim of this project is to fabricate highly efficient grating couplers in thin-film silicon-on-insulator (SOI) wafers, which have a silicon (Si) thickness of the order of 1 mum. These thin-film waveguides allow the development of higher speed Si optical modulators, sensors and vertical surface coupling for Si light emitting diodes (LEDs), Hence, SOI rectangular and blazed grating couplers were fabricated where the buried oxide layer in SOI was designed as a reflective layer. The former gratings were fabricated by electron beam lithography followed by reactive ion etching, while the latter gratings were fabricated by angled argon ion beam etching. Both types of grating were designed at the diffraction order of -1, for a wavelength of 1.3 mum. The fabricated rectangular gratings have grating heights of 0.14, 0.23, 0.30 and 0.44 mum and a pitch of 0.40 mum whereas the sawtooth blazed gratings have a grating depth of 0.08 mum and a period of 0.38 mum To our knowledge, no Si blazed gratings with a pitch of less than 500 nm have been fabricated before. The SOI rectangular grating couplers yield a maximum output efficiency of 71 +/- 5 % towards the superstrate, while the blazed grating couplers produce an output efficiency of 84 +/- 5 % towards the substrate. These experimental output efficiencies are the highest yet reported in SOI for each grating profile, respectively. In addition, an optical loss of 0.15 +/- 0.05 dB/cm of Unibond SOI was measured for the first time. Furthermore, the experimental output efficiencies of the grating couplers with various grating heights were found to be consistent with perturbation theory. Thus, our aim of designing and fabricating an highly efficient thin film SOI waveguide grating coupler has been achieved. These grating couplers may enhance the applications of integrated optics in Si, and may allow the development of devices such as those mentioned above.

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Hewitt, Peter Douglas. "Active optical devices in silicon-on-insulator rib waveguides". Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/843522/.

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Much progress has been made in the development of active silicon opto-electronic devices over the last 15 years. This is primarily due to the widely accepted belief that the free carrier effect is the most efficient optical modulation and switching mechanism in silicon, along with the potential advantages of combining optical and electronic devices onto a single silicon substrate rather than using discrete components. A study of the scientific literature shows that whilst numerous devices have been reported, few have been seriously optimised. In the literature, devices have consisted primarily of two or three terminal devices based around a rib waveguide. The three terminal devices are fewer in number but generally perform better. Conversely, two terminal devices have received a little more attention in terms of producing faster devices. Therefore, this work provides an in depth analysis of the performance of p+-i-n+ diodes when configured as optical modulators, with the aim of improving both the device DC and transient performance characteristics. The primary DC performance characteristic is the current required to achieve a given phase change and the transient performance characteristics are measured in terms of the device rise and fall times. These characteristics have been studied with variations in geometrical and fabrication based parameters such as the position and doping concentration of the contacts, the aspect ratio of the rib waveguides, and the overall dimensions. The key result from the modelling is that the most efficient multi-micron size device is a three terminal device with high doping concentration, constant doping profiles and large diffusion depth doped regions located close to the rib edge. A theoretical device of this nature required a current of only 2.7mA for a ? radian phase shift with rise and fall times of 22ns and 2ns respectively. The best previously achieved was a device which theoretically required 4mA for a ? radian phase shift. Additionally, by including isolation trenches on either side of the doped regions the DC performance characteristics can be further improved by up to 74%. There are also advantages in reducing the dimensions of the devices to 1 micron or less. At these dimensions the DC and transient performance characteristics are improved by more than a further order of magnitude, hence requiring fractions of 1mA for a ? radian phase shift. Two of the most promising designs have been fabricated and experimentally analysed. Due to fabrication constraints the most efficient device was not fabricated. However, both two and three terminal devices were fabricated. The best device tested experimentally was a three terminal device that required a current of 14mA for a ? phase shift. The modelling and experimental results agree well therefore validating the modelling. Therefore we can be confident that the additional theoretical results for devices that could not be fabricated are reliable, and hence significant further improvements could be made by fabricating these devices. Likely roles for these types of devices are medium bandwidth modulators/switches and a variety of sensor applications.

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Timotijevic, Branislav. "Auto-regressive optical filters in silicon-on-insulator waveguides". Thesis, University of Surrey, 2007. http://epubs.surrey.ac.uk/844086/.

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The subject of the thesis is the modelling, design, fabrication and characterisation of single-stage and multi-stage resonators on Silicon-on-Insulator (SOI) strip and rib waveguides. The devices have been investigated with the aim to produce small and efficient wavelength selective elements that could one day be used in multiplexers, filters and other components of integrated optical circuits. Due to the complexity of devices and very often requirements of advanced simulation packages, most of the devices have been modelled (lambda = 1.55mum) through separate analyses of the components forming the filters. The study starts with the modelling of rib and strip waveguides aiming at the single-mode and zero-birefringent regime of operation, followed by the analysis of a directional coupler. The modelling suggests that the cross-sectional rectangular area of a strip waveguide should be smaller than 0.10mum2. Similarly, rib waveguides with a height of 1.35mum, and a waveguide width of 0.8mum or 1.0mum, could be used as basic single-mode and zero-birefringent elements for building relatively large rib waveguide based devices. The analysis of a directional coupler on strip waveguides has shown that a near-polarisation-independence regime is possible for waveguide separations below 0.20mum and waveguide widths in range 0.29 - 0.40mum, when a waveguide height is chosen to be 0.29mum or 0.34mum. Simplified z-transform models of filters have been employed to calculate values of the most relevant figures of merit such as Free Spectral Range (FSR), Full Width at Half Maximum (FWHM), Finesse (F) and Q-factor, and also to quantify the sensitivity of the transfer function to the changes of geometric parameters, coupling issues and thermal effects. Based on the modelling and information from test chips of previous students, 4 main designs grouped in 6 test chips have been proposed and fabricated in collaboration with the Intel Corporation Photonics research groups from San Jose and Jerusalem. Two designs were based on rib waveguide type devices and two on strip waveguide type devices. The goals in all cases were; polarisation insensitivity, single-mode behaviour, improvement of the FSR, shaping response by using various geometries, the possibility of tuning response by thermal means etc. Experimental results have shown improvement in the FWHM and FSR as expected for both strip and rib designs. An additional stage of multi-level, serially coupled racetrack resonator in rib waveguides has resulted in a decrease of the FWHM by more than 30% (6pm). Polarisation independence by using identical multiple serial-coupled rib racetracks has also been demonstrated. The FSR above 60nm have been reported for small strip resonators (radius of l.5mum) with good polarisation characteristics for rings which radius is near 3mum. To the author's knowledge this is the largest FSR yet reported for a silicon based ring resonator. There is also improvement of the spectral response of multiple Vernier rings, which, with some corrections in terms of side lobes appearing in the spectrum, may be used for designing devices with the FSR as large as 70nm.

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Chan, Seong Phun. "Third order Bragg grating filters in silicon-on-insulator waveguides". Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/842993/.

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The subject of this thesis is the design, analysis, fabrication and characterisation of third order Bragg grating optical filters on silicon-on-insulator (SOI) rib waveguides. New design guidelines for small cross sectional SOI waveguides have been proposed and described to address the issue of satisfying polarisation independence and single mode conditions simultaneously. This waveguide design will be used as a building block for the realisation of Bragg grating filters. The reflection spectral response of the deep Bragg grating operating in a third diffraction order on a single mode rib SOI waveguide has been studied theoretically using Floquet-Bloch Theory (FBT) developed in Politecnico di Bari, Italy in comparison with optical modelling software utilising Coupled Mode Theory (CMT). A series of Bragg gratings with different grating etch depths and lengths were fabricated at Southampton University to investigate the agreement between experimental results with theoretical predictions. The wavelength tuning capability of these Bragg grating filters in SOI waveguide structures were also investigated and implemented using the thermo-optic effect, through Joule heating of thin film aluminium heaters situated on top of the rib structure. The SOI rib waveguides with 1.5mum height are designed to exhibit polarisation independence and single mode operation. The Bragg grating filter is designed to operate at a wavelength of 1.55mum with a grating period of 689nm. The less rigorous fabrication tolerance of third order grating in comparison with that required by 228nm first order gratings is highly desirable only at the expense of slightly lower maximum reflectivity. The maximum reflectivity measurements of approximately 0.42 for third order grating are in agreement with theoretical prediction by FBT. The Bragg grating filters were thermally tuned to shift the Bragg resonance wavelength by up to 3.5nm with heater power of approximately 190mW. The tuning range of the filter is inhibited by the short lifetime of the heater caused by electromigration. At the time this work was carried out, this is the first demonstration of thermo-optic tuning through an integrated heating element, of third order Bragg grating filters based on small cross sectional SOI waveguide. The temperature sensitivity of the Bragg grating filters was analysed using a 2-D finite element method (FEM) and was consistent with the experimental results.

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Waugh, Peter Michael. "First order Bragg grating filters in silicon on insulator waveguides". Thesis, University of Surrey, 2008. http://epubs.surrey.ac.uk/843865/.

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The subject of this thesis is the design; analysis, fabrication and characterisation of first order Bragg Grating optical filters in Silicon-on-Insulator (SOI) planar waveguides. It is envisaged that this work will result in the possibility of Bragg Grating filters for use in Silicon Photonics. It is the purpose of the work to create as far as is possible flat surface waveguides so as to facilitate Thermo-Optic tuning and also the incorporation into rib-waveguide Silicon Photonics. The spectral response of the shallow Bragg Gratings was modelled using Coupled Mode Theory (CMT) by way of RSoft Gratingmod TM. Also the effect of having a Bragg Grating with alternate layers of refractive index 1.5 and 3.5 was simulated in order to verify that Silica and Silicon layered Bragg Gratings could be viable. A series of Bragg Gratings were patterned on 1.5 micron SOI at Philips in Eindhoven to investigate the variation of grating parameters with a) the period of the gratings b) the duty cycle (or mark to space ratio) of the gratings and c) the length of the region converted to Bragg Gratings (i.e. the number of grating period repetitions). One set of gratings were thermally oxidised at Philips in Eindhoven (this was to simulate the effects of oxidising Porous Silicon) and another set were ion implanted with Oxygen ions at the Ion Beam Facility, University of Surrey. The gratings were tested and found to give transmission minima at approximately 1540 nanometres and both methods of creating flat surfaces were found to give similar minima. Atomic Force Microscopy was applied to the grating area of the Ion as Implanted samples in the ATI, University of Surrey, which were found to have surface undulations in the order of 60 nanometres.

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Hobbs, Gareth. "Optical properties of silicon-on-insulator waveguide arrays and cavities". Thesis, University of Bath, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.636523.

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This thesis details work undertaken over the past three and a half years looking at the optical properties of silicon-on-insulator waveguide arrays and 1D photonic crystal microcavities. Chapter 1 contains relevant background information, while chapters 2, 3 and 4 contain results of experimental work. Chapter 5 summarises the results and conclusions of the preceding chapters and also suggests some directions for possible future research. Chapter 1 starts by introducing some of the fundamental aspects of guided wave optics and how these relate to silicon-on-insulator waveguides. The modes of single,uncoupled silicon waveguides are described, along with a brief description of how such waveguides can be fabricated. Following this a short introduction to optical cavities and the relevant parameters that can be used to describe them is provided. In Chapter 2 results are presented that experimentally confirm the presence of couplinginduced dispersion in an array consisting of two strongly-coupled silicon-on-insulator waveguides. This provides an additional mechanism to tailor dispersion and shows that it is possible to achieve anomalous dispersion at wavelengths where the dispersion of a single wire would be normal. In Chapter 3 the focus switches to the linear properties of 1D photonic crystal microcavities in silicon. The optical transmission of a number of different devices are examined allowing the identification of suitable microcavities for use in nonlinear measurements. Microcavities with Q-factors in excess of ∼40,000 were selected for use in the work presented in Chapter 4, whilst the possibility of thermally tuning the microcavity resonances is also investigated. A cavity resonance shift of 0.0770± 0.0004 nm K-1 is measured experimentally. Chapter 4 looks at the nonlinear transmission of those microcavities identified as suitable in Chapter 3. More specifically, the response of the microcavities to thermal and free carrier induced bistability is considered. Thermally induced bistability is observed at a threshold power of 240 μW for the particular cavity chosen, with a thermal time of 0.6 μs also measured. Free carrier induced bistability is then observed for pulses with nanosecond durations and milliwatt peak powers. Following that, the interplay of thermal and free carrier effects is observed using input pulses of a suitable duration.

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Zhang, Fan. "Sinusoidal anti-coupling symmetric strip waveguides on a silicon-on-insulator platform". Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62885.

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The full abstract for this thesis is available in the body of the thesis, and will be available when the embargo expires.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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Bhatnagar, Sameer. "Fabrication of a vertically stacked grating coupler for optical waveguides in silicon-on-insulator". Thesis, McGill University, 2008. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=116025.

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Couplers that can couple light vertically between stacked waveguides are finding importance in the push towards higher density and lower cost optoelectronics. A compact grating coupler (12.8mum) designed by a former student is implemented in this project. The device is patterned by reactive-ion-etch into silicon-on-insulator with a 250 nm thick device layer, ensuring single mode operation. Alignment marks are patterned into the backside so that aligned bonding can be carried out. A die bonding recipe is developed using an intermediate adhesive film of SU-8-2. A novel approach to creating optically smooth input facets is included in the final steps of the process. Optical testing remains to be done.

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Powell, Olly, i n/a. "Fabrication of Micro-Mirrors in Silicon Optical Waveguides". Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20040719.115224.

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The conventional large radii bends used in large cross section silicon-on-insulator waveguides were replaced with novel wet etched corner mirrors, potentially allowing much smaller devices, therefore lower costs. If such corners had been based on reactive ion etch techniques they would have had the disadvantage of rougher surfaces and poor alignment in the vertical direction. Wet etching overcomes these two problems by providing smooth corner facets aligned precisely to the vertical {100} silicon crystallographic planes. The waveguides obtained had angled walls, and so numerical analysis was undertaken to establish the single mode condition for such trapezoidal structures. To show the relationship between fabrication tolerances and optical losses a three dimensional simulation tool was developed, based on expansion of the incident mode into plane waves. Various new fabrication techniques were are proposed, namely: the use of titanium as a mask for deep silicon wet anisotropic etching, a technique for aligning masks to the crystal plane on silicon-oninsulator wafers, a corner compensation method for sloping sidewalls, and the suppression of residues and pyramids with the use of acetic acid for KOH etching. Also, it was shown that isopropyl alcohol may be used in KOH etching of vertical walls if the concentration and temperature are sufficiently high. As the proposed corner mirrors were convex structures the problem of undercutting by high order crystal planes arose. This was uniquely overcome by the addition of some structures to effectively convert the convex structures into concave ones. The corner mirrors had higher optical losses than were originally hoped for, similar to those of mirrors in thin film waveguides made by RIE. The losses were possibly due to poor angular precision of the lithography process. The design also failed to provide adequate mechanisms to allow the etch to be stopped at the optimal time. The waveguides had the advantage over thin film technology of large, fibre-compatible cross sections. However the mirror losses must be reduced for the technology to compete with existing large cross section waveguides using large bends. Potential applications of the technology are also discussed. The geometry of the crystal planes places fundamental limits on the proximity of any two waveguides. This causes some increase in the length of MMI couplers used for channel splitting. The problem could possibly be overcome by integrating one of the mirrors into the end of the MMI coupler to form an L shaped junction.

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Książki na temat "Silicon-on-insulator waveguides"

Aalto, Timo. Microphotonic silicon waveguide components. [Espoo, Finland]: VTT, 2004.

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Solehmainen, Kimmo. Fabrication of microphotonic waveguide components on silicon. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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Rickman, Andrew George. Silicon on insulator integrated optical waveguides. 1994.

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Części książek na temat "Silicon-on-insulator waveguides"

Tong, Xingcun Colin. "Silicon-on-Insulator Waveguides". W Advanced Materials for Integrated Optical Waveguides, 253–87. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01550-7_6.

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Le, Trung-Thanh. "Silicon on Insulator Microring Resonators with Feedback Waveguides for Highly Sensitive Biomedical Sensors". W IFMBE Proceedings, 105–9. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-32183-2_27.

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Steglich, Patrick, Claus Villringer, Silvio Pulwer, Mauro Casalboni i Sigurd Schrader. "Design Optimization of Silicon-on-Insulator Slot-Waveguides for Electro-optical Modulators and Biosensors". W Springer Proceedings in Physics, 173–87. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-30137-2_11.

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Prasanna Kumaar, S., i A. Sivasubramanian. "Optimization of Silicon-On-Insulator Photonic Strip Waveguide for Biosensing Applications". W Springer Proceedings in Physics, 695–98. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9259-1_160.

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Chandra, Veer, Neha Choudhary i Rakesh Ranjan. "Silicon-On-Insulator Photonics Waveguide Design for Near-IR Evanescent Field-Based Blood Sensor". W Lecture Notes in Electrical Engineering, 229–37. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-2818-4_25.

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Sun, DeGui. "Digital Optical Switches with a Silicon-on-Insulator Waveguide Corner". W Applications of Silicon Photonics in Sensors and Waveguides. InTech, 2018. http://dx.doi.org/10.5772/intechopen.76584.

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Shishkin, Victor, Kenji Tanaka i Hideaki Murayama. "Proposal on Miniaturization of Distributed Sensing System Based on Optical Frequency Domain Reflectometry". W Advances in Transdisciplinary Engineering. IOS Press, 2019. http://dx.doi.org/10.3233/atde190103.

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The main goal of our research is to develop an integrated photonics circuit for sensing system based on Optical Frequency Domain Reflectometry in order to reduce size, weight and cost of current system. In this work we designed, simulated and fabricated Michelson interferometer integrating components such as adiabatic splitter, loop back mirrors, grating couplers and waveguides on total area 150x410 μm of silicon-on-insulator chip. According to simulation results free spectral range of the interferometer is 0.55 nm. Manufacturing variability was taken into account by performing corner analysis.

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Steglich, Patrick. "Silicon-on-Insulator Slot Waveguides: Theory and Applications in Electro-Optics and Optical Sensing". W Emerging Waveguide Technology. InTech, 2018. http://dx.doi.org/10.5772/intechopen.75539.

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Tsarev, A. V. "The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures". W Advances in Semiconductor Nanostructures, 505–19. Elsevier, 2017. http://dx.doi.org/10.1016/b978-0-12-810512-2.00021-4.

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Zhou, Zhi-Yuan, i Bao-Sen Shi. "Generation and Manipulation of Nonclassical Photon Sources in Nonlinear Processes". W Single Photon Manipulation. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.90268.

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Nonclassical photon sources are key components in quantum information science and technology. Here, the basic principles and progresses for single photon generation and their further manipulation based on second- or third-order nonlinear processes in various degrees of freedom are briefly reviewed and discussed. Based on spontaneous parametric down-conversion and spontaneous four-wave mixing, various nonlinear materials such as quasi-phase-matching crystals, dispersion-shifted fibers, and silicon-on-insulator waveguides are used for single photon generation. The kinds of entanglement generated include polarization, time-energy, time-bin, and orbital angular momentum. The key ingredient for photon pair generation in nonlinear processes is described and discussed. Besides, we also introduce quantum frequency conversion for converting a single photon from one wavelength to another wavelength, while keeping its quantum properties unchanged. Finally, we give a comprehensive conclusion and discussion about future perspectives for single photon generation and manipulation in nonlinear processes. This chapter will provide an overview about the status, current challenge, and future perspectives about single photon generation and processing in nonlinear processes.

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Streszczenia konferencji na temat "Silicon-on-insulator waveguides"

Prabhu, Mihika, Carlos Errando-Herranz, Lorenzo De Santis, Ian Christen, Changchen Chen i Dirk Englund. "Single photon emission from waveguide-integrated color centers in silicon". W CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fw5f.5.

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We demonstrate silicon color centers coupled to foundry-compatible silicon waveguides. We produced G-centers via carbon implantation in commercial silicon-on-insulator waveguides and measure through-waveguide single-photon emission in the telecommunications O-band.

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Prelewitz, D. F., N. D. Sankey i T. G. Brown. "Nonlinear propagation and coupling effects in silicon-on-insulator waveguides". W Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ipr.1991.tud20.

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Silicon on insulator structures have been proposed as possible low-loss waveguides for eventual monolithic integration of both optical and electronic components. In this paper we present an experimental investigation of optical nonlinearities in waveguides fabricated by the bond and etch-back technique. This procedure consists of ion implantation, annealing, bonding, and dopant-selective chemical etching. Measurements at a wavelength λ=1.06 μm show the waveguide losses to be close to the material absorption for silicon (11 cm−1). This allows the use of both pulsed and CW Nd:YAG lasers for the investigation of nonlinear coupling and propagation over distances up to several millimeters.

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Zhang, Jidong, Qiang Lin, Giovanni Piredda, Robert W. Boyd, Govind P. Agrawal i Philippe M. Fauchet. "Optical soliton in silicon-on-insulator waveguides". W Integrated Optoelectronic Devices 2008, redaktorzy Joel A. Kubby i Graham T. Reed. SPIE, 2008. http://dx.doi.org/10.1117/12.765637.

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Tsang, H. K. "Nonlinearities in silicon-on-insulator optical waveguides". W Asia-Pacific Optical Communications, redaktorzy Yan Sun, Jianping Chen, Sang Bae Lee i Ian H. White. SPIE, 2005. http://dx.doi.org/10.1117/12.637129.

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Brooks, Chris, Paul E. Jessop, Henghua Deng, David O. Yevick i Garry Tarr. "Polarization rotating waveguides in silicon on insulator". W Integrated Photonics Research. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/ipr.2004.ifg4.

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Turnbull, Adrienne E., Philip D. Waldron, Marie-Josee Picard, N. Garry Tarr i Paul E. Jessop. "Trench isolated rib waveguides on silicon-on-insulator". W Photonics North, redaktorzy John C. Armitage, Simon Fafard, Roger A. Lessard i George A. Lampropoulos. SPIE, 2004. http://dx.doi.org/10.1117/12.567446.

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Painchaud, Y., M. Poulin, C. Latrasse, N. Ayotte, M. J. Picard i M. Morin. "Bragg grating notch filters in silicon-on-insulator waveguides". W Bragg Gratings, Photosensitivity, and Poling in Glass Waveguides. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/bgpp.2012.bw2e.3.

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Aalto, Timo T., Sanna Yliniemi, Paeivi Heimala, Panu Pekko, Janne Simonen i Markku Kuittinen. "Integrated Bragg gratings in silicon-on-insulator waveguides". W Symposium on Integrated Optoelectronic Devices, redaktorzy Yakov S. Sidorin i Ari Tervonen. SPIE, 2002. http://dx.doi.org/10.1117/12.433242.

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Wheeler, Dana C., i Douglas C. Hall. "Optical interference logic in silicon-on-insulator waveguides". W Integrated Optoelectronic Devices 2006, redaktorzy Hans J. Coufal, Zameer U. Hasan i Alan E. Craig. SPIE, 2006. http://dx.doi.org/10.1117/12.648046.

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Burke, O. A., I. Evans, H. F. Arrand i B. J. Luff. "Efficient polarization conversion in silicon-on-insulator waveguides". W Integrated Photonics Research. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/ipr.2002.itha3.

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