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Artykuły w czasopismach na temat "Silicon nitride"
Yusrini, Marita, i Yaacob Iskandar Idris. "Dispersion of Strengthening Particles on the Nickel-Iron-Silicon Nitride Nanocomposite Coating". Advanced Materials Research 647 (styczeń 2013): 705–10. http://dx.doi.org/10.4028/www.scientific.net/amr.647.705.
Pełny tekst źródłaYang, S., R. F. Gibson, G. M. Crosbie i R. L. Allor. "Thermal Cycling Effects on Dynamic Mechanical Properties and Crystallographic Structures of Silicon Nitride-Based Structural Ceramics". Journal of Engineering for Gas Turbines and Power 119, nr 2 (1.04.1997): 279–84. http://dx.doi.org/10.1115/1.2815571.
Pełny tekst źródłaSung, Rak Joo, Seung Ho Kim, Takafumi Kusunose, Tadachika Nakayama, Tohru Sekino i Koichi Niihara. "Mechanical and Wear Properties of Silicon Nitride Added with AlN". Materials Science Forum 486-487 (czerwiec 2005): 209–12. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.209.
Pełny tekst źródłaGritsenko, Vladimir A., Alexandr V. Shaposhnikov, W. M. Kwok, Hei Wong i Georgii M. Jidomirov. "Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces". Thin Solid Films 437, nr 1-2 (sierpień 2003): 135–39. http://dx.doi.org/10.1016/s0040-6090(03)00601-1.
Pełny tekst źródłaPark, Dong-Soo, i Chang-Won Kim. "Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers". Journal of the American Ceramic Society 82, nr 3 (22.12.2004): 780–82. http://dx.doi.org/10.1111/j.1151-2916.1999.tb01836.x.
Pełny tekst źródłaHadfield, Mark, Wei Wang i Andrew Wereszczak. "Mechanical Properties of Silicon Nitride Using RUS & C-Sphere Methodology". Advances in Science and Technology 64 (październik 2010): 71–75. http://dx.doi.org/10.4028/www.scientific.net/ast.64.71.
Pełny tekst źródłaBlumenthal, Daniel J., Rene Heideman, Douwe Geuzebroek, Arne Leinse i Chris Roeloffzen. "Silicon Nitride in Silicon Photonics". Proceedings of the IEEE 106, nr 12 (grudzień 2018): 2209–31. http://dx.doi.org/10.1109/jproc.2018.2861576.
Pełny tekst źródłaHampshire, Stuart. "Silicon Nitride Ceramics". Materials Science Forum 606 (październik 2008): 27–41. http://dx.doi.org/10.4028/www.scientific.net/msf.606.27.
Pełny tekst źródłaMECARTNEY, M. L., R. SINCLAIR i R. E. LOEHMAN. "Silicon Nitride Joining". Journal of the American Ceramic Society 68, nr 9 (wrzesień 1985): 472–78. http://dx.doi.org/10.1111/j.1151-2916.1985.tb15811.x.
Pełny tekst źródłaHoriuchi, Noriaki. "Silicon nitride success". Nature Photonics 6, nr 7 (28.06.2012): 412. http://dx.doi.org/10.1038/nphoton.2012.169.
Pełny tekst źródłaRozprawy doktorskie na temat "Silicon nitride"
Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites". Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.
Pełny tekst źródłaDurham, Simon J. P. "Carbothermal reduction of silica to silicon nitride powder". Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=74221.
Pełny tekst źródłaSol-gel processing was found to provide superior mixing conditions over dry mixing, which allowed for complete conversion to silicon nitride at optimum carbon:silica ratios of 7:1. The ideal reaction temperature was found to be in the range of 1500$ sp circ$C to 1550$ sp circ$C. Suppression of silicon oxynitride and silicon carbide was achieved by ensuring that: (a) the nitrogen gas was gettered of oxygen, and (b) that the gas passed through the reactants. Thermodynamic modelling of the Si-O-N-C system showed that ordinarily the equilibrium conditions for the formation of silicon nitride are very delicate. Slight deviations away from equilibrium leads to the formation of non-equilibrium species such as silicon carbide caused by the build-up of carbon monoxide. Reaction conditions such as allowing nitrogen gas to pass through the reactants beneficially moves the reaction equilibrium well away from the silicon carbide and silicon oxynitride stability regions.
The particle size of silicon nitride produced from carbon and silica precursors was of the order of 2-3 $ mu$m and could only be reduced to sub-micron range by seeding with ultra-fine silicon nitride. It was shown that the mechanism of nucleation and growth of unseeded reactants was first nucleation on the carbon by the reaction between carbon, SiO gas and nitrogen (gas-solid reaction), and then growth of the particles by the gas phase reaction (CO, SiO, N$ sb2$).
Hadian, Ali Mohammad. "Joining of silicon nitride-to-silicon nitride and to molybdenum for high-temperature applications". Thesis, McGill University, 1993. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=41370.
Pełny tekst źródłaThis study deals with the application of brazing for the fabrication of $ rm Si sb3N sb4/Si sb3N sb4$ and $ rm Si sb3N sb4/Mo$ joints using Ni-Cr-Si brazing alloys based on AWS BNi-5 (Ni-18Cr-19Si atom%). Thermodynamic calculations were performed to predict wetting at $ rm Si sb3N sb4$/Ni-Cr-Si alloys interfaces. By using some simplifying assumptions and suitable scaling of the reaction, the model predicted that Ni-Cr-Si alloys with Ni/Cr = 3.5 and X$ sb{ rm Si}$ $<$ 0.25 would react chemically with and wet $ rm Si sb3N sb4$. Good agreement was found between the theoretical calculations and experimental results.
Brazing experiments were carried out to study the joinability of $ rm Si sb3N sb4$ with various Ni-Cr-Si filler metals which had already shown good wetting characteristics on $ rm Si sb3N sb4$. The $ rm Si sb3N sb4/Si sb3N sb4$ joints formed with a 10 atom% Si brazing alloy exhibited the highest strength ($ approx$120 MPa) which was mainly due to the presence of a CrN reaction layer at the ceramic/filler metal interface. The high temperature four-point bend strengths of $ rm Si sb3N sb4/Si sb3N sb4$ joints were markedly higher than the room temperature values. A high strength of about 220 MPa was achieved when the joints were tested at 900$ sp circ$C.
From the results of the $ rm Si sb3N sb4/Mo$ joining experiments it was found that the joint quality and microstructure were strongly influenced by the composition of the filler metal and such brazing variables as time and temperature. Of all the $ rm Si sb3N sb4$/Mo joints, those made with the S10 brazing alloy at 1300$ sp circ$C for 1 min. exhibited the highest strength of 55 MPa.
Finally, in all the cases, the shear strength of all the joints was found to be lower than their four-point bend values.
Yi, Jae Hyung. "Silicon rich nitride for silicon based laser devices". Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44315.
Pełny tekst źródłaPage 214 blank.
Includes bibliographical references.
Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light emitter and the limited understanding of tli~ excitation mechanism of Er in dielectric media by optical and electrical pumping methods impedes the progress of the research activities in this area. Silicon rich nitride (SRN) has been investigated as a strong candidate for silicon based laser devices. SRN has many advantages over other Si-based materials systems. These advantages include a high electrical injection level at low voltages, a low annealing temperature for Si nanocluster (Si-nc) formation and a large refractive index for strong optical confinement. Strong light emission from localized states in Si-nc embedded in SRN was demonstrated with a PLQE (Photoluminescence Quantum Efficiency) of 7%. This effect was confirmed through several experiments and first principle calculations. Thue Morse aperiodic structures were fabricated with light emitting SRN and SiO2 materials, for the first time. Through the resonance phenomena achieved using this approach an emission enhancement of a factor of 6 was demonstrated experimentally. A sequential annealing technique was investigated to enhance the light emission from the Si-nc based light emitter. Electrical injection was greatly improved with annealing treatments of SRN based devices. In particular, bipolar electrical injection into SRN led to electroluminescence which was comparable to photoluminescence in peak shape and spectral position. Er doped SRN (Er:SRN) was fabricated through a co-sputter technique to achieve light emission at the wavelength of 1.54 [mu]m.
(cont.) Energy transfer from SRN td Er was confirmed and shown to have a strong dependence on Si content. Si racetrack resonator structures with a low loss value of 2.5 dB/cm were fabricated through a Local Oxide (LOCOS) process and coupled with an Er:SRN layer to investigate gain behavior. Electrical injection properties into the Er:SRN layer were investigated and the electroluminescent device was fabricated. A detailed discussion on optical and electrical excitation of Er is provided to clarify the difference of the Er excitation mechanisms. A comparison of key simulation parameters used within the two level equations for optical and electrical excitation of Er atoms is provided to explain how the parameters contribute to each excitation mechanism. The most significant differences between the parameters and excitation mechanisms are also explained. Finally a summary of important factors to achieve a silicon based laser is provided and discussed for future investigation based on the experimental data and the investigation presented in this work.
by Jae Hyung Yi.
Ph.D.
Li, Wenyu. "The fabrication of silicon nitride-titanium nitride composite materials". Thesis, University of Leeds, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305875.
Pełny tekst źródłaSaxena, Pawan. "Slip casting of silicon nitride". Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=56974.
Pełny tekst źródłaThis method, however, has received little attention in the field of engineering ceramics especially with regard to silicon nitride. Commercial fabrication of silicon nitride, a major contender for high temperature applications due to its excellent thermomechanical properties, has been confined to hot pressing. This is an expensive process and has geometrical limitations.
Slip casting, followed by sintering, has been identified as a potentially economical alternative fabrication method, however a number of parameters have to be optimized before a good slip cast silicon nitride body can be made. The aim of the present work is to control parameters such as pH, viscosity and deflocculation in order to form dense, homogeneous, slip cast silicon nitride bodies.
A detailed investigation of the rheological properties of Si$ sb3$N$ sb4$ and careful control of processing parameters, made it possible to produce slip cast Si$ sb3$N$ sb4$ bodies having up to 97% TD on sintering. Mechanical strength values obtained by slip casting were compared with those obtained by die-pressing. Strength values of the slip cast material was limited by iron inclusions entrained in processing.
Ovri, J. E. O. "Diametral-compression of silicon nitride". Thesis, University of Manchester, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378585.
Pełny tekst źródłaKnight, Patrick J. "Nitride formation at silicon surfaces". Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.
Pełny tekst źródłaRockett, Chris H. "Flexural Testing of Molybdenum-Silicon-Boron Alloys Reacted from Molybdenum, Silicon Nitride, and Boron Nitride". Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16293.
Pełny tekst źródłaMartinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum". Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.
Pełny tekst źródłaSiC was solid-state bonded to Mo at temperatures ranging from 1000$ sp circ$C to 1700$ sp circ$C. Diffusion of Si and C into Mo resulted in a reaction layer containing two main phases: $ rm Mo sb5Si sb3$ and Mo$ sb2$C. At temperatures higher than 1400$ sp circ$C diffusion of C into $ rm Mo sb5Si sb3$ stabilized a ternary phase of composition $ rm Mo sb5Si sb3$C. At 1700$ sp circ$C, the formation of MoC$ rm sb{1-x}$ was observed as a consequence of bulk diffusion of C into Mo$ sb2$C. A maximum average shear strength of 50 MPa was obtained for samples hot-pressed at 1400$ sp circ$C for 1 hour. Higher temperatures and longer times contributed to a reduction in the shear strength of the joints, due to the excessive growth of the interfacial reaction layer. $ rm Si sb3N sb4$ was joined to Mo in vacuum and nitrogen, at temperatures between 1000$ sp circ$C and 1800$ sp circ$C, for times varying from 15 minutes to 4 hours. Dissociation of $ rm Si sb3N sb4$ and diffusion of Si into Mo resulted in the formation of a reaction layer consisting, initially, of $ rm Mo sb3$Si. At 1600$ sp circ$C (in vacuum) Mo$ sb3$Si was partially transformed into $ rm Mo sb5Si sb3$ by diffusion of Si into the original silicide, and at higher temperatures, this transformation progressed extensively within the reaction zone. Residual N$ sb2$ gas, which originated from the decomposition of $ rm Si sb3N sb4,$ dissolved in the Mo, however, most of the gas escaped during bonding or remained trapped at the original $ rm Si sb3N sb4$-Mo interface, resulting in the formation of a porous layer. Joining in N$ sb2$ increased the stability of $ rm Si sb3N sb4,$ affecting the kinetics of the diffusion bonding process. The bonding environment did not affect the composition and morphology of the interfaces for the partial pressures of N$ sb2$ used. A maximum average shear strength of 57 MPa was obtained for samples hot-pressed in vacuum at 1400$ sp circ$C for 1 hour.
Książki na temat "Silicon nitride"
Shigeyuki, Sōmiya, Mitomo Mamoru i Yoshimura Masahiro 1942-, red. Silicon nitride. London: Elsevier Applied Science, 1990.
Znajdź pełny tekst źródła1938-, Belyĭ V. I., i Rzhanov Anatoliĭ Vasilʹevich, red. Silicon nitride in electronics. Amsterdam: Elsevier, 1988.
Znajdź pełny tekst źródłaRazzell, A. G. Silicon carbide fibre silicon nitride matrix composites. [s.l.]: typescript, 1992.
Znajdź pełny tekst źródłaHierra, Emiliano Jose, i Jesus Anjel Salazar. Silicon nitride: Synthesis, properties, and applications. Hauppauge, N.Y: Nova Science Publishers, 2011.
Znajdź pełny tekst źródłaT, Fang H., i United States. National Aeronautics and Space Administration., red. Improved silicon nitride for advanced heat engines. [Washington, DC]: National Aeronautics and Space Administration, 1991.
Znajdź pełny tekst źródłaT, Fang H., i United States. National Aeronautics and Space Administration., red. Improved silicon nitride for advanced heat engines. [Washington, DC]: National Aeronautics and Space Administration, 1987.
Znajdź pełny tekst źródłaGates, Richard Stephen. Boundary lubrication of silicon nitride. Gaithersburg, MD: U.S. Department of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.
Znajdź pełny tekst źródłaVivien, Mitchell, i Mitchell Market Reports, red. Silicon nitride and the sialons. Wyd. 3. Oxford, UK: Elsevier Advanced Technology, 1993.
Znajdź pełny tekst źródłaSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Redaktorzy Sah R. E, Electrochemical Society. Dielectric Science and Technology Division. i Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.
Znajdź pełny tekst źródłaSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Redaktorzy Sah R. E, Electrochemical Society. Dielectric Science and Technology Division. i Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.
Znajdź pełny tekst źródłaCzęści książek na temat "Silicon nitride"
Gooch, Jan W. "Silicon Nitride". W Encyclopedic Dictionary of Polymers, 665. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10658.
Pełny tekst źródłaIrvine, William M. "Silicon Nitride". W Encyclopedia of Astrobiology, 2270–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44185-5_1801.
Pełny tekst źródłaIrvine, William M. "Silicon Nitride". W Encyclopedia of Astrobiology, 1515. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-11274-4_1801.
Pełny tekst źródłaAardahl, C. L., i J. W. Rogers. "Silicon Nitride". W Inorganic Reactions and Methods, 96–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch58.
Pełny tekst źródłaIrvine, William M. "Silicon Nitride". W Encyclopedia of Astrobiology, 1. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-27833-4_1801-4.
Pełny tekst źródłaHampshire, Stuart. "Silicon Nitride Ceramics". W Engineered Ceramics, 77–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119100430.ch5.
Pełny tekst źródłaGooch, Jan W. "Silicon Nitride Whiskers". W Encyclopedic Dictionary of Polymers, 665–66. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10659.
Pełny tekst źródłaPetzow, G., i M. Herrmann. "Silicon Nitride Ceramics". W Structure and Bonding, 47–167. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-45623-6_2.
Pełny tekst źródłaWalkosz, Weronika. "Silicon Nitride Ceramics". W Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces, 1–10. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-7817-2_1.
Pełny tekst źródłaIrvine, William M. "Silicon Nitride (SiN)". W Encyclopedia of Astrobiology, 2760. Berlin, Heidelberg: Springer Berlin Heidelberg, 2023. http://dx.doi.org/10.1007/978-3-662-65093-6_1801.
Pełny tekst źródłaStreszczenia konferencji na temat "Silicon nitride"
Choi, Sung R. "Foreign Object Damage in Gas-Turbine Grade Silicon Nitrides by Silicon Nitride Ball Projectiles". W ASME Turbo Expo 2009: Power for Land, Sea, and Air. ASMEDC, 2009. http://dx.doi.org/10.1115/gt2009-59031.
Pełny tekst źródłaSanthanam, Sridhar, Kei-Peng Jen i Zachary N. Wing. "Enhancing Toughness of Silicon Nitrides With Nanoscale Additions". W ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-68871.
Pełny tekst źródłaSteimle, R. F., R. A. Rao, B. Hradsky, R. Muralidhar, M. Sadd, M. Ramon, S. Straub i in. "Hybrid Silicon Nanocrystal Silicon Nitride Memory". W 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.e-9-2.
Pełny tekst źródłaOlinger, Dale Kent, Bertrand G. Bovard i H. Angus Macleod. "Reactive ion-assisted deposition of boron nitride and aluminum nitride". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.thnn5.
Pełny tekst źródłaBaets, Roel, Ananth Z. Subramanian, Stéphane Clemmen, Bart Kuyken, Peter Bienstman, Nicolas Le Thomas, Günther Roelkens, Dries Van Thourhout, Philippe Helin i Simone Severi. "Silicon Photonics: silicon nitride versus silicon-on-insulator". W Optical Fiber Communication Conference. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/ofc.2016.th3j.1.
Pełny tekst źródłaWinchester, Kevin J., Sue M. Spaargaren i John M. Dell. "Transferable silicon nitride microcavities". W Asia Pacific Symposium on Microelectronics and MEMS, redaktorzy Kevin H. Chau i Sima Dimitrijev. SPIE, 1999. http://dx.doi.org/10.1117/12.364511.
Pełny tekst źródłaSrinivasan, Kartik, Marcelo Davanço i Karen Grutter. "Silicon nitride optomechanical crystals". W Frontiers in Optics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/fio.2014.fw4b.2.
Pełny tekst źródłaArmin, Fahimeh, Frederic Nabki i Michaël Ménard. "Compact Silicon Nitride Interferometer". W Frontiers in Optics. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/fio.2021.fth6b.5.
Pełny tekst źródłaZervas, Michael. "Manufacturing Aspects for All-nitride-core Ultra-Low Loss Silicon Nitride Photonics Platform". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/iprsn.2018.ith3b.3.
Pełny tekst źródłaSun, Ellen Y., Harry E. Eaton, John E. Holowczak i Gary D. Linsey. "Development and Evaluation of Environmental Barrier Coatings for Silicon Nitride". W ASME Turbo Expo 2002: Power for Land, Sea, and Air. ASMEDC, 2002. http://dx.doi.org/10.1115/gt2002-30628.
Pełny tekst źródłaRaporty organizacyjne na temat "Silicon nitride"
Sawyer, J., B. Buchan, R. Duiven, M. Berger, J. Cleveland i J. Ferri. Cordierite silicon nitride filters. Office of Scientific and Technical Information (OSTI), luty 1992. http://dx.doi.org/10.2172/6887066.
Pełny tekst źródłaBuljan, S. T., J. G. Baldoni, J. Neil i G. Zilberstein. Dispersoid-Toughened Silicon Nitride Composites. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1988. http://dx.doi.org/10.21236/ada351520.
Pełny tekst źródłaGates, Richard S., Richard S. Gates i Stephen M. Hsu. Boundary lubrication of silicon nitride. Gaithersburg, MD: National Institute of Standards and Technology, 1995. http://dx.doi.org/10.6028/nist.sp.876.
Pełny tekst źródłaJan W. Nowok, John P. Hurley i John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), czerwiec 2000. http://dx.doi.org/10.2172/824976.
Pełny tekst źródłaTiegs, T. N., L. Leaskey i R. O. Loutfy. Gas pressure sintering of silicon nitride. Office of Scientific and Technical Information (OSTI), grudzień 1998. http://dx.doi.org/10.2172/555284.
Pełny tekst źródłaSawyer, J., B. Buchan, R. Duiven, M. Berger, J. Cleveland i J. Ferri. Cordierite silicon nitride filters. Final report. Office of Scientific and Technical Information (OSTI), luty 1992. http://dx.doi.org/10.2172/10177615.
Pełny tekst źródłaSundberg, G. J. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II. Office of Scientific and Technical Information (OSTI), styczeń 1994. http://dx.doi.org/10.2172/814549.
Pełny tekst źródłaChen, Wei, S. G. Malghan, S. C. Danforth i A. Pechenik. Low-temperature fabrication of transparent silicon nitride. Office of Scientific and Technical Information (OSTI), maj 1994. http://dx.doi.org/10.2172/10165598.
Pełny tekst źródłaSundberg, G. J., A. M. Vartabedian, J. A. Wade i C. S. White. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report. Office of Scientific and Technical Information (OSTI), październik 1994. http://dx.doi.org/10.2172/28303.
Pełny tekst źródłaYust, C. S. Reciprocating sliding wear of in-situ reinforced silicon nitride. Office of Scientific and Technical Information (OSTI), październik 1995. http://dx.doi.org/10.2172/110749.
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