Gotowe bibliografie tematyczne / Silicon nanocrystals

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Gotowa bibliografia na temat „Silicon nanocrystals”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 8 czerwca 2024

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Artykuły w czasopismach na temat "Silicon nanocrystals"

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Natrayan, L., P. V. Arul Kumar, S. Kaliappan, S. Sekar, Pravin P. Patil, R. Jayashri i E. S. Esakki Raj. "Analysis of Incorporation of Ion-Bombarded Nickel Ions with Silicon Nanocrystals for Microphotonic Devices". Journal of Nanomaterials 2022 (16.08.2022): 1–7. http://dx.doi.org/10.1155/2022/5438084.

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Nanotechnology is playing a greater role in biomedical engineering. Microphotonic technology is on another side, having faster growth with more requirements. The nanocrystals are a part of nanotechnology which uses silicon for manufacturing. These silicon nanocrystals have the optical property mostly used in microphotonic devices. Silicon nanocrystals are of biocompatibility with less toxicity. Therefore, the advancement in the silicon nanocrystal helps develop more microphotonic devices for biological purposes. One critical factor of silicon nanocrystal is the surface defects or surface imperfections. Surface passivation is the method employed for rectifying this disadvantage of silicon nanocrystal. Another major thing is that silicon nanocrystals are size dependent. So proper variation on the surface is required for yielding high performance of the nanocrystal. After characterizing the surface of the silicon nanocrystal, ion bombardment can occur. Nickel is a lustrous white chemical element which is less reactive when it is of a smaller size. So ion bombardment of nickel ion on the surface of the silicon nanocrystal can be done to improvise the performance of the microphotonic devices. Nearly there is an excess of 20 a.u. of photoluminescence intensity yielded. The relative fluorescence is also increased by 150 a.u. This research work enhanced the silicon nanocrystal using ion bombardment of nickel ion, which increased energy traps resulting in more intensities.
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Ferraioli, L., M. Wang, G. Pucker, D. Navarro-Urrios, N. Daldosso, C. Kompocholis i L. Pavesi. "Photoluminescence of Silicon Nanocrystals in Silicon Oxide". Journal of Nanomaterials 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/43491.

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Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.
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Shen, Hao, Huabao Shang, Yuhan Gao, Deren Yang i Dongsheng Li. "Efficient Sensitized Photoluminescence from Erbium Chloride Silicate via Interparticle Energy Transfer". Materials 15, nr 3 (30.01.2022): 1093. http://dx.doi.org/10.3390/ma15031093.

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In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the semiconductor and erbium compound nanocrystals offers some important insights into the realization of efficient light emission for silicon-based integrated photonics.
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Zatryb, G., A. Podhorodecki, J. Misiewicz, J. Wojcik i P. Mascher. "Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD". Journal of Nanotechnology 2009 (2009): 1–5. http://dx.doi.org/10.1155/2009/769142.

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Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped withEr3+ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc toEr3+ions is discussed.
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Komarov, Fadey, Altynay Togambayeva, Ludmila Vlasukova, Irina Parkhomenko, Oleg Milchanin, Maksim Makhavikov i Murat Tolkynay. "Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix". Advanced Materials Research 679 (kwiecień 2013): 9–13. http://dx.doi.org/10.4028/www.scientific.net/amr.679.9.

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The results of structural and optical investigation of crystalline Si with embedded InSb nanocrystals are reported. These nanocrystals were synthesized in silicon matrix by means of high-fluence “hot” implantation of Sb and In ions followed by thermal treatment. TEM gives an evidence of nanocrystal formation in implanted and annealed samples as well as an existence of microtwins and dislocation-type defects and substantial residual mechanical strains. We have identified nanocrystals as InSb from RS data. Mechanical strains in “silicon – InSb nanocrystals” system have been evaluated, too.
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Li, Zhaohan, Zachary L. Robinson, Paolo Elvati, Angela Violi i Uwe R. Kortshagen. "Distance-dependent resonance energy transfer in alkyl-terminated Si nanocrystal solids". Journal of Chemical Physics 156, nr 12 (28.03.2022): 124705. http://dx.doi.org/10.1063/5.0079571.

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Understanding and controlling the energy transfer between silicon nanocrystals is of significant importance for the design of efficient optoelectronic devices. However, previous studies on silicon nanocrystal energy transfer were limited because of the strict requirements to precisely control the inter-dot distance and to perform all measurements in air-free environments to preclude the effect of ambient oxygen. Here, we systematically investigate the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals for the first time. Silicon nanocrystal solids with inter-dot distances varying from 3 to 5 nm are fabricated by varying the length and surface coverage of alkyl ligands in solution-phase and gas-phase functionalized silicon nanocrystals. The inter-dot energy transfer rates are extracted from steady-state and time-resolved photoluminescence measurements, enabling a direct comparison to theoretical predictions. Our results reveal that the distance-dependent energy transfer rates in Si NCs decay faster than predicted by the Förster mechanism, suggesting higher-order multipole interactions.
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YıImaz, D. E., C. Bulutay i T. Çagın. "Atomistic Structure Simulation of Silicon Nanocrystals Driven with Suboxide Penalty Energies". Journal of Nanoscience and Nanotechnology 8, nr 2 (1.02.2008): 635–39. http://dx.doi.org/10.1166/jnn.2008.a117.

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The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. In this work, an approach is presented to simulate the structural behavior of silicon nanocrystals embedded in amorphous oxide matrix based on simple valence force fields as described by Keating-type potentials. After generating an amorphous silicon-rich-oxide, its evolution towards an embedded nanocrystal is driven by the oxygen diffusion process implemented in the form of a Metropolis algorithm based on the suboxide penalty energies. However, it is observed that such an approach cannot satisfactorily reproduce the shape of annealed nanocrystals. As a remedy, the asphericity and surface-to-volume minimization constraints are imposed. With the aid of such a multilevel approach, realistic-sized silicon nanocrystals can be simulated. Prediction for the nanocrystal size at a chosen oxygen molar fraction matches reasonably well with the experimental data when the interface region is also accounted. The necessity for additional shape constraints suggests the use of more involved force fields including long-range forces as well as accommodating different chemical environments such as the double bonds.
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Efremov, M. D., Vladimir A. Volodin, D. V. Marin, Sofia A. Arzhannikova, M. G. Ivanov, S. V. Gorajnov, A. I. Korchagin i in. "Blue Photoluminescence from Quantum Size Silicon Nanopowder". Solid State Phenomena 108-109 (grudzień 2005): 65–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.65.

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Silicon nanopowders were produced using electron-beam-induced evaporation of bulk silicon ingots in various gas atmosphere. Optical properties of the nanopowders were studied with the use of photoluminescence and Raman spectroscopy techniques. Photoluminescence peaks in the visible region of the spectrum have been detected at room temperature in silicon nanopowders, produced in argon gas atmosphere. Strong short-wavelength shift of the photoluminescence peaks can be result of quantum confinement effect for electrons and holes in small silicon nanocrystals (down to 2 nm in diameter). The size of silicon nanocrystals was estimated from Raman spectroscopy data. The calculated in frame of effective mass model optical gaps for silicon nanocrystals of spherical shape are in good correlation with experimental photoluminescence data. The attempts of deposition of silicon nanocrystal films from the nanopowders on silicon substrates were carried out.
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Zhigunov, D. M., A. A. Popov, Yu M. Chesnokov, A. L. Vasiliev, A. M. Lebedev, I. A. Subbotin, S. N. Yakunin, O. A. Shalygina i I. A. Kamenskikh. "Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers". Applied Sciences 9, nr 22 (6.11.2019): 4725. http://dx.doi.org/10.3390/app9224725.

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Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.
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Choi, Seong Jae, Dong Kee Yi, Jae-Young Choi, Jong-Bong Park, In-Yong Song, Eunjoo Jang, Joo In Lee i in. "Spatial Control of Quantum Sized Nanocrystal Arrays onto Silicon Wafers". Journal of Nanoscience and Nanotechnology 7, nr 12 (1.12.2007): 4285–93. http://dx.doi.org/10.1166/jnn.2007.884.

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Monolayer arrays of monodispersed nanocrystals (<10 nm) onto three dimensional (3D) substrates have considerable potential for various engineering applications such as highly integrated memory devices, solar cells, biosensors and photo and electro luminescent displays because of their highly integrated features with nanocrystal homogeneity. However, most reports on nanocrystal arrays have focused on two dimensional (2D) flat substrates, and the production of wafer-scale monolayer arrays is still challenging. Here we address the feasibility of arraying nanocrystal monolayers in wafer-scale onto 3D substrates. We present both metal (Pd) and semiconductor (CdSe) nanocrystals arrayed in monolayer onto trenched silicon wafers (4 inch diameter) using a facile electrostatic adsorption scheme. In particular, CdSe nanocrystal arrays in the trench well showed superior luminescent efficiency compared to those onto the protruded trench flat, due to the densely arrayed CdSe nanocrystals in the vertical direction. Furthermore, the surface coverage controllability was investigated using a 2D silicon substrate. Our approach can be applied to generate highly efficient displays, memory chips and integrated sensing devices.
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Rozprawy doktorskie na temat "Silicon nanocrystals"

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Walters, Robert Joseph Atwater Harry Albert. "Silicon nanocrystals for silicon photonics /". Diss., Pasadena, Calif. : California Institute of Technology, 2007. http://resolver.caltech.edu/CaltechETD:etd-06042007-160130.

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Choi, Jonghoon. "Silicon nanocrystals biocompatible fluorescent nanolabel /". College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8806.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2008.
Thesis research directed by: Dept. of Chemical and Biomolecular Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications". Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/368025.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as active material. In particular, I proposed to model these structures using a transfer matrix approach to simulate its optical properties in combination with a 2D device simulator to estimate the electrical performance. Based on the optimized layer sequences, high efficiency cells were produced within the european project LIMA characterized by silicon quantum dots as active layer. Experimental results demonstrate the validity of this approach by showing an enhancement of the short circuit current density with up to 4%. In addition, a new configuration was proposed to improve the solar cell performances. Here the silicon nanoparticles are placed on a cover glass and not directly on the silicon cells. The aim of this study was to separate the silicon nanocrystals (Si-NCs) layer from the cell. In this way, the solar device is not affected by the Si-NCs layer during the fabrication process, i.e. the surface passivation quality of the cell remains unaffected after the application of the LDS layer. Using this approach, the downshifting contribution can be quantified separately from the passivation effect, as compared with the previous method based on the Si-NCs deposition directly on the solar devices. By suitable choice of the dielectric structures, an improvement in short circuit current of up 1% due to the LDS effect is demonstrated and simulated.
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Sgrignuoli, Fabrizio. "Silicon nanocrystals downshifting for photovoltaic applications". Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/944/1/Assemblaggio.pdf.

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In conventional silicon solar cell, the collection probability of light generated carries shows a drop in the high energy range 280-400nm. One of the methods to reduce this loss, is to implement nanometre sized semiconductors on top of a solar cell where high energy photons are absorbed and low energy photons are re-emitted. This effect, called luminescence down-shifter (LDS), modifies the incident solar spectrum producing an enhancement of the energy conversion efficiency of a cell. We investigate this innovative effect using silicon nanoparticles dispersed in a silicon dioxide matrix as active material. In particular, I proposed to model these structures using a transfer matrix approach to simulate its optical properties in combination with a 2D device simulator to estimate the electrical performance. Based on the optimized layer sequences, high efficiency cells were produced within the european project LIMA characterized by silicon quantum dots as active layer. Experimental results demonstrate the validity of this approach by showing an enhancement of the short circuit current density with up to 4%. In addition, a new configuration was proposed to improve the solar cell performances. Here the silicon nanoparticles are placed on a cover glass and not directly on the silicon cells. The aim of this study was to separate the silicon nanocrystals (Si-NCs) layer from the cell. In this way, the solar device is not affected by the Si-NCs layer during the fabrication process, i.e. the surface passivation quality of the cell remains unaffected after the application of the LDS layer. Using this approach, the downshifting contribution can be quantified separately from the passivation effect, as compared with the previous method based on the Si-NCs deposition directly on the solar devices. By suitable choice of the dielectric structures, an improvement in short circuit current of up 1% due to the LDS effect is demonstrated and simulated.
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Deng, Xin, i 鄧欣. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41508749.

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Deng, Xin. "Positron studies of silicon and germanium nanocrystals embedded in silicon dioxide". Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41508749.

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Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition". Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-28765.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.
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Schmidt, Jan-Uwe. "Synthesis of silicon nanocrystal memories by sputter deposition". Forschungszentrum Rossendorf, 2005. https://hzdr.qucosa.de/id/qucosa%3A21703.

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Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.
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Ondič, Lukáš. "Silicon nanocrystals, photonic structures and optical gain". Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAE004/document.

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Les nanocristaux de Silicium (SiNCs) de taille inférieure à 5 nm sont des matériaux qui présentent une intense photoluminescence (PL) et capables d’amplification optique. Cette dernière propriété est un pré-requis à l’obtention d’émission stimulée sous pompage optique. Atteindre l’émission stimulé (et l’effet laser) à partir de nanostructures basées sur Si est d’un intérêt particulier dans le domaine de la photonique à base de silicium. Le but de ce travail était (i) d’étudier les propriétés optiques fondamentales de SiNCs, (ii) de concevoir et de réaliser un cristal photonique présentant une efficacité d’extraction augmentée et (iii) d’explorer la possibilité d’améliorer l’amplification optique des émetteurs de lumière à base de SiNCs en les combinant avec un cristal photonique à deux dimensions
Silicon nanocrystals (SiNCs) of sizes below approximately 5 nm are a material with an efficient room-temperature photoluminescence (PL) and optical gain. Optical gain is a prerequisite for obtaining stimulated emission from a pumped material, and the achievement of stimulated emission (and lasing) from Si-based nanostructures is of particular interest in the field of silicon photonics. The aim of this work was (i) to investigate fundamental optical properties of SiNCs, (ii) to design and prepare a photonic crystal with enhanced light extraction efficiency and (iii) to explore a possibility of enhancing optical gain of light-emitting SiNCs by combining them with a two-dimensional photonic crystal
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Brown, Samuel Lynn. "Silicon Nanocrystals| Optical Properties and Self-assembly". Thesis, North Dakota State University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10790537.

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Silicon nanocrystal’s (SiNCs) size dependent optical properties and nontoxic nature portend potential applications across a broad range of industries. With any of these applications, a thorough understanding of SiNC photophysics is desirable to tune their optical properties while optimizing quantum yield. However, a detailed understanding of the photoluminescence (PL) from SiNCs is convoluted by the complexity of the decay mechanisms, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond decays.

In this dissertation, a brief history of semiconductor nanocrystals is given, leading up to the first discovery of room temperature PL in SiNCs. This is then followed by an introduction to the various nanocrystal synthetic schemes and a discussion of quantum dot photophysics in general. Three different studies on the PL from SiNCs are then presented. In the first study, the stretched nature of the time dependent PL is analyzed via chromatically-resolved and full-spectrum PL decay measurements. The second study analyzes the size dependence of the bimodal PL decay, where the amplitude of the nanosecond and microsecond decay are related to nanocrystal size, while the third project analyzes the temperature and microstructure dependencies of the PL from SiNC solids.

After an indepth look at the PL from SiNCs, this report examines preliminary results of SiNC and silver nanocrystal self-assembly. When compared to metal and metal chalcogenide nanoparticles, there is a dearth of literature on the self-assembly of SiNCs. To understand these phenomena, we analyze the size dependent ability of SiNCs to form a ‘superlattice’ and compare this with silver nanocrystals. Although the results on self-assembly are still somewhat preliminary, it appears that factors such as SiNC concentration and size dispersity play a key role in SiNC self-assembly, while suggesting intrinsic differences between the self-assembly of SiNCs and silver nanocrystals.

Finally, at the end of this dissertation, a corollary project is presented on the computational analysis of fluorescent silver nanoclusters (AgNCs). Due to their small size and non-toxic nature, AgNCs are an ideal fluorophore for biological systems, yet there is a limited understanding of their photophysics, which is the focus of this part of the dissertation.

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Książki na temat "Silicon nanocrystals"

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Pavesi, Lorenzo, i Rasit Turan. Silicon nanocrystals: Fundamentals, synthesis and applications. Weinheim: Wiley-VCH, 2010.

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Koshida, Nobuyoshi, red. Device Applications of Silicon Nanocrystals and Nanostructures. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6.

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Nobuyoshi, Koshida, i SpringerLink (Online service), red. Device Applications of Silicon Nanocrystals and Nanostructures. Boston, MA: Springer US, 2009.

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Meeting, Materials Research Society, i Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2009 : San Francisco, Calif.)., red. Amorphous and polycrystalline thin-film silicon science and technology--2009: Symposium held April 14-17, 2009, San Francisco, California, U.S.A. / editors, A. Flewitt ... [et al.]. Warrendale, Pa: Materials Research Society, 2009.

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Meeting, Materials Research Society, i Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2010 : San Francisco, Calif.)., red. Amorphous and polycrystalline thin-film silicon science and technology--2010: Symposium held April 5-9, 2009, San Francisco, California / editors, Qi Wang ... [et al.]. Warrendale, Pa: Materials Research Society, 2010.

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Pavesi, Lorenzo, i Rasit Turan, red. Silicon Nanocrystals. Wiley, 2010. http://dx.doi.org/10.1002/9783527629954.

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Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Wiley-VCH Verlag GmbH, 2010.

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Koshida, Nobuyoshi. Device Applications of Silicon Nanocrystals and Nanostructures. Springer, 2016.

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Pizzini, Sergio, i Gudrun Kissinger. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

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Pizzini, Sergio, i Gudrun Kissinger. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

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Części książek na temat "Silicon nanocrystals"

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Pavesi, Lorenzo, i Rasit Turan. "Introduction". W Silicon Nanocrystals, 1–4. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch1.

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Iacona, Fabio, Giorgia Franzò, Alessia Irrera, Simona Boninelli i Francesco Priolo. "Structural and Optical Properties of Silicon Nanocrystals Synthesized". W Silicon Nanocrystals, 247–73. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch10.

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Gourbilleau, Fabrice, Celine Ternon, Christian Dufour, Xavier Portier i Richard Rizk. "Formation of Si-nc by Reactive Magnetron Sputtering". W Silicon Nanocrystals, 275–95. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch11.

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Karakuscu, Aylin, i Gian Domenico Soraru. "Si and SiC Nanocrystals by Pyrolysis of Sol-Gel-Derived Precursors". W Silicon Nanocrystals, 297–308. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch12.

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Mangolini, Lorenzo, i Uwe Kortshagen. "Nonthermal Plasma Synthesis of Silicon Nanocrystals". W Silicon Nanocrystals, 309–48. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch13.

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Gelloz, Bernard. "Silicon Nanocrystals in Porous Silicon and Applications". W Silicon Nanocrystals, 349–93. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch14.

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Oda, Shunri, i Shaoyun Huang. "Silicon Nanocrystal Flash Memory". W Silicon Nanocrystals, 395–444. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch15.

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Anopchenko, Aleksei, Nicola Daldosso, Romain Guider, Daniel Navarro-Urrios, Alessandro Pitanti, Rita Spano, Zhizhong Yuan i Lorenzo Pavesi. "Photonics Application of Silicon Nanocrystals". W Silicon Nanocrystals, 445–85. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch16.

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Roschuk, Tyler, Jing Li, Jacek Wojcik, Peter Mascher i Iain D. Calder. "Lighting Applications of Rare Earth-Doped Silicon Oxides". W Silicon Nanocrystals, 487–506. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch17.

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Borsella, Elisabetta, Mauro Falconieri, Nathalie Herlin, Victor Loschenov, Guiseppe Miserocchi, Yaru Nie, Iparia Rivolta, Anastasia Ryabova i Dayang Wang. "Biomedical and Sensor Applications of Silicon Nanoparticles". W Silicon Nanocrystals, 507–36. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch18.

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Streszczenia konferencji na temat "Silicon nanocrystals"

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Amans, D., S. Callard, A. Gagnaire, Jacques Joseph, G. Ledoux i Friedrich Huisken. "Silicon nanocrystals microcavity". W International Symposium on Optical Science and Technology, redaktor Zeno Gaburro. SPIE, 2002. http://dx.doi.org/10.1117/12.452318.

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Shcheglov, K. V., C. M. Yang i H. A. Atwater. "Photoluminescence and Electroluminescence of Ge-Implanted Si/SiO2/Si Structures". W Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.msab3.

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Streszczenie:
Although it was observation of efficient photoluminescence [PL] from porous silicon that prompted numerous investigations into the optoelectronic properties of group IV semiconductor nanocrystals, there is interest in other related materials which are more robust in various chemical and thermal ambients and which can be easily incorporated into standard silicon VLSI processing. A promising approach that meets the above requisites is synthesis of semiconductor nanocrystals in an SiO2 matrix accomplished by various techniques. In this letter we report on the fabrication of a Ge nanocrystal-based electroluminescent device using ion implantation and precipitation.
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Warner, Jamie H., i Richard D. Tilley. "Photonics of silicon nanocrystals". W Microelectronics, MEMS, and Nanotechnology, redaktorzy Derek Abbott, Yuri S. Kivshar, Halina H. Rubinsztein-Dunlop i Shanhui Fan. SPIE, 2005. http://dx.doi.org/10.1117/12.639524.

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Pi, Xiaodong, Zachary Holman i Uwe Kortshagen. "Silicon and Germanium Nanocrystal Inks for Low-Cost Solar Cells". W ASME 2010 4th International Conference on Energy Sustainability. ASMEDC, 2010. http://dx.doi.org/10.1115/es2010-90445.

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Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single- or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrates. Silicon (germanium) nanocrystals are formed in a nonthermal plasma. In the plasma environment a Si/Ge precursor is broken down by electron impact, leading to the nucleation and growth of Si or Ge crystals. By adding dopant precursors, p- and n-doped as well as intrinsic crystals can be formed. Organic ligands can be attached in the plasma such that nanocrystals become soluble in organic solvents. These “nanocrystal inks” can be used to form Si or Ge films with ultra-low-cost printing or coating techniques. Film properties of Si/Ge-ink processed films will be discussed. Proof-of-concept demonstrations of solar cells produced from silicon inks will be presented.
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Pavesi, Lorenzo, Luca Dal Negro, Massimo Cazzanelli, Georg Pucker, Zeno Gaburro, G. C. Prakash, G. Franzo i Franceso Priolo. "Optical gain in silicon nanocrystals". W Symposium on Integrated Optics, redaktorzy David J. Robbins, John A. Trezza i Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426932.

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Fujioka, Kouki, Akiyoshi Hoshino, Noriyoshi Manabe, Yasuhiro Futamura, Richard Tilley i Kenji Yamamoto. "Silicon nanocrystals as handy biomarkers". W Biomedical Optics (BiOS) 2007, redaktorzy Marek Osinski, Thomas M. Jovin i Kenji Yamamoto. SPIE, 2007. http://dx.doi.org/10.1117/12.699772.

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Löper, P., A. Witzky, A. Hartel, S. Gutsch, D. Hiller, J. C. Goldschmidt, S. Janz, S. W. Glunz i M. Zacharias. "Photovoltaic properties of silicon nanocrystals in silicon carbide". W SPIE OPTO, redaktorzy Alexandre Freundlich i Jean-Francois F. Guillemoles. SPIE, 2012. http://dx.doi.org/10.1117/12.906669.

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Anderson, Curtis, Lin Cui i Uwe Kortshagen. "Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon". W ASME 2009 3rd International Conference on Energy Sustainability collocated with the Heat Transfer and InterPACK09 Conferences. ASMEDC, 2009. http://dx.doi.org/10.1115/es2009-90320.

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This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.
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Lacombe, Alexandre, Félix Beaudoin, François Martin i Guy G. Ross. "Electro-optical properties of silicon nanocrystals". W Photonics North 2009, redaktor Réal Vallée. SPIE, 2009. http://dx.doi.org/10.1117/12.836999.

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Choi, Jonghoon, Qin Zhang, Victoria M. Hitchins, Nam Sun Wang i Vytas Reipa. "Cytotoxicity of the photoluminescent silicon nanocrystals". W NanoScience + Engineering, redaktorzy Elizabeth A. Dobisz i Louay A. Eldada. SPIE, 2007. http://dx.doi.org/10.1117/12.734222.

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Raporty organizacyjne na temat "Silicon nanocrystals"

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Yu, J. Silicon Nanocrystal Laser. Office of Scientific and Technical Information (OSTI), marzec 2005. http://dx.doi.org/10.2172/15015892.

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BATH UNIV (UNITED KINGDOM) DEPT OF PHYSICS. Singlet Oxygen Generation Mediated By Silicon Nanocrystal Assemblies. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2011. http://dx.doi.org/10.21236/ada541769.

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