Gotowe bibliografie tematyczne / Silicon carbide

Gotowa bibliografia na temat „Silicon carbide”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 30 lipca 2024

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Artykuły w czasopismach na temat "Silicon carbide"

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Meng, Fan Tao, Shan Yi Du i Yu Min Zhang. "Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process". Key Engineering Materials 512-515 (czerwiec 2012): 789–92. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.789.

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Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites. In this paper, silicon carbides whiskers were firstly deposited on substrates of RB-SiC by CVD process and then silicon carbide composites were prepared by chemical vapor infiltration in the SiC whiskers in an upright chemical vapor deposition furnace of Φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and Ar as dilute gas. The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM), and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD) As a result, the curly defects of whiskers decrease with the addition of dilute gas. And by chemical vapor infiltration in SiC whiskers the, SiC composites were successfully prepared. Finally the deposits were determined as β-SiC.
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Zhou, You, Kiyoshi Hirao, Yukihiko Yamauchi i Shuzo Kanzaki. "OS08W0193 Sliding wear of silicon carbide and silicon carbide-graphite composite ceramics". Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS08W0193. http://dx.doi.org/10.1299/jsmeatem.2003.2._os08w0193.

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Idrees, Maria, Husnain Ahmad Chaudhary, Arslan Akbar, Abdeliazim Mustafa Mohamed i Dina Fathi. "Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite". Materials 15, nr 6 (10.03.2022): 2061. http://dx.doi.org/10.3390/ma15062061.

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Flexural strength of concrete is an important property, especially for pavements. Concrete with higher flexural strength has fewer cracking and durability issues. Researchers use different materials, including fibers, polymers, and admixtures, to increase the flexural strength of concrete. Silicon carbide and tungsten carbide are some of the hardest materials on earth. In this research, the mechanical properties of carbide concrete composites were investigated. The silicon carbide and tungsten carbide at different percentages (1%, 2%, 3%, and 4%) by weight of cement along with hybrid silicon carbide and tungsten carbide (2% and 4%) were used to produce eleven mixes of concrete composites. The mechanical tests, including a compressive strength test and flexural strength test, along with the rapid chloride permeability test (RCPT), were conducted. It was concluded that mechanical properties were enhanced by increasing the percentages of both individual and hybrid carbides. The compressive strength was increased by 17% using 4% tungsten carbide, while flexural strength was increased by 39% at 4% tungsten carbide. The significant effect of carbides on flexural strength was also corroborated by ANOVA analysis. The improvement in flexural strength makes both carbides desirable for use in concrete pavement. Additionally, the permeability, the leading cause of durability issues, was reduced considerably by using tungsten carbide. It was concluded that both carbides provide promising results by enhancing the mechanical properties of concrete and are compatible with concrete to produce composites.
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Renlund, Gary M., Svante Prochazka i Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties". Journal of Materials Research 6, nr 12 (grudzień 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.

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Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.
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Zvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov i D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics". Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, nr 4 (12.01.2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.

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Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.
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V.M. Shevko, R.A. Uteeva, A.B. Badikova, G.E. Karataeva i G.A. Bitanova. "PRODUCTION OF FERROALLOYS, CALCIUM CARBIDE, AND PHOSPHORUS FROM HIGH-SILICON PHOSPHORITE". RASAYAN Journal of Chemistry 16, nr 02 (2023): 955–63. http://dx.doi.org/10.31788/rjc.2023.1628310.

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The article provides information on the interaction of Chilisai phosphorite with carbon, coke, and iron with the production of ferroalloy and calcium carbide and the extraction of phosphorus into gas. Research is conducted using computer thermodynamic modeling, mathematical planning of experiments, and electric smelting of phosphorites in an arc electric furnace. It is found that under equilibrium conditions the interaction occurs with the formation of iron silicides, calcium, silicon carbides, calcium, elemental silicon, aluminum, calcium, silicon oxide (ІІ), gaseous phosphorus (P4, P2), and iron phosphides. An increase in the amount of iron at 1,500-2,000oC increases the degree of extraction of silicon in the alloy but decreases the extraction of calcium in the calcium carbide, the concentration of silicon in the alloy, and the amount of calcium carbide. In the temperature range of 1,900-2,000oC in the presence of 16.8-19.8% of iron, phosphorus completely converts to gas, and there forms an alloy with 45-47.8% of Si and 1.6- 1.9% of Al and calcium carbide in the amount of 150-215 dm3 /kg (with the extraction of 60-63.6% of Si into the alloy and 50-56.4% of Ca into calcium carbide). Electric smelting of phosphorite in an arc furnace produces ferrosilicon of grade FS45 (40-44.7% of Si) with the extraction of 73.8% of silicone into it, as well as calcium carbide up to the second grade in the amount of 200-252 dm3 /kg. Phosphorus is almost completely (99.0-99.4%) reduced during electric smelting and converted into the gas phase.
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Mitchell, Tyrone, Lutgard C. Jonghe, Warren J. MoberlyChan i Robert O. Ritchie. "Silicon Carbide Platelet/Silicon Carbide Composites". Journal of the American Ceramic Society 78, nr 1 (styczeń 1995): 97–103. http://dx.doi.org/10.1111/j.1151-2916.1995.tb08366.x.

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Maruyama, Benji, i Fumio S. Ohuchi. "H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system". Journal of Materials Research 6, nr 6 (czerwiec 1991): 1131–34. http://dx.doi.org/10.1557/jmr.1991.1131.

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Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.
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Kmetz, Michael, Steven Suib i Francis Galasso. "Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration". Journal of the American Ceramic Society 73, nr 10 (październik 1990): 3091–93. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06723.x.

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Sheth, Manas. "A Comparative Study of Silicon and Silicon Carbide Semiconductors". International Journal of Science and Research (IJSR) 13, nr 2 (5.02.2024): 785–89. http://dx.doi.org/10.21275/sr24206001809.

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Rozprawy doktorskie na temat "Silicon carbide"

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Wang, Jue. "Silicon carbide power devices". Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/579.

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Fuentes, Ricardo I. "Sintering of silicon carbide". Thesis, Massachusetts Institute of Technology, 1986. http://hdl.handle.net/1721.1/14208.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1986.
Vita.
Includes bibliographical references (leaves 152-159).
by Ricardo I Fuentes.
Ph.D.
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Pehlivanoglu, Ibrahim Engin. "SILICON CARBIDE MEMS OSCILLATOR". Case Western Reserve University School of Graduate Studies / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=case1196372276.

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Pellegrino, Paolo. "Point Defects in Silicon and Silicon-Carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3133.

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Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites". Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.

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Silicon carbide fibre/silicon nitride matrix composites have been fabricated using the reaction bonded silicon nitride (RBSN) and sintered reaction bonded silicon nitride (SRBSN) processing routes. A filament winding and tape casting system was developed to produce sheets of parallel aligned fibres within a layer of green matrix ('prepreg') which were cut, stacked and hot pressed to form a plate. This was nitrided and (in the case of SRBSN matrix composites) hot pressed at 1700°C to density the matrix. The magnesia (MgO) and the yttria/alumina (Y2O3/AI2O3) additive SRBSN systems were investigated as matrices for ease of processing and compatibility with the matrix. The MgO additive Si3N4 matrix reacted with the outer carbon rich layer on the surface of the fibres, framing a reaction layer approx. 2pm in thickness. A reaction layer was also observed with the Y2O3/AI2O3 additive matrix, but was thinner (< 0.5um), and was identified as silicon carbide from the electron diffraction pattern. X-ray mapping in the SEM was used to investigate the spatial distribution of elements within the interface region to a resolution < lum, including light elements such as carbon. The 6wt%Y203/ 2wt%Al203 additive SRBSN system was chosen for more detailed investigation, and the majority of characterisation was performed using this composition. Oxidation of composite samples was carried out at temperatures between 1000°C and 1400°C for up to 1000 hours. Little damage was visible after 100 hours for all temperatures, corresponding to a relatively small drop in post oxidation bend strength. After 1000 hours at 1000°C both carbon rich outer layers and the central carbon core of the fibre were removed. Samples were severely oxidised after 1000 hours at 1400°C, having a glass layer on the outer surface and replacement of near surface fibre/matrix interfaces with glass. The post oxidation bend strengths for both conditions were approx.2/3 of the as fabricated strength. Less damage was observed after 1000 hours at 1200°C, and the post oxidation bend strength was higher than the 1000°C and 1400°C samples. Mechanical properties of the SRBSN matrix composite were investigated at room temperature and elevated temperatures (up to 1400°C). The average room temperature values for matrix cracking stress and ultimate strength (in bend) were 651.1 and 713.2 MPa respectively, with corresponding Weibull moduli of 5.7 and 8.7. The stresses are comparable to similar monolithic silicon nitrides. Room temperature tensile matrix cracking and ultimate strength were 232MPa and 413MPa, lower than the bend test results, which were attributed to bending stresses in the sample, lowering the apparent failure stresses. The samples failed in a composite like manner (i.e. controlled rather than catastrophic failure), with a substantially higher woric of fracture than monolithic materials. The average matrix cracking and ultimate bend strength at 1200°C were 516MPa and 554MPa, dropping to 178MPa and 486MPa at 1400°C (the matrix cracking stress was indistinct at 1400°C due to plasticity). The creep and stress rupture properties at 1300°C were investigated in four point bend, using dead-weight loading. The creep rate was KH/s at a stress of 200MPa, lower than a hot pressed silicon nitride with MgO additive, and higher than a hot isostatically pressed Y2O2/SÍO2 additive silicon nitride. A cavitation creep mechanism was deduced from the stress exponent, which was >1. Failure by stress rupture did not have a lower limit, which is also associated with cavitation of the amorphous grain boundary phase.
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Gao, Wei. "Oxidation of nitride-bonded silicon carbide (NBSC) and hot rod silicon carbide with coatings". Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366751.

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Anthony, Carl John. "Oxide interface studies on silicon and silicon carbide". Thesis, University of Newcastle Upon Tyne, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.424150.

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Godard, Hilary Tony. "Aspects of the silicon carbide filament - silicon interface /". The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487322984313654.

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Wu, Huann-Der. "Vapor synthesis of silicon and silicon carbide powders /". The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487330761217513.

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Iwata, Hisaomi. "Stacking faults in silicon carbide /". Linköping : Univ, 2003. http://www.bibl.liu.se/liupubl/disp/disp2003/tek817s.pdf.

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Książki na temat "Silicon carbide"

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Friedrichs, Peter, Tsunenobu Kimoto, Lothar Ley i Gerhard Pensl, red. Silicon Carbide. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2009. http://dx.doi.org/10.1002/9783527629053.

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Friedrichs, Peter, Tsunenobu Kimoto, Lothar Ley i Gerhard Pensl, red. Silicon Carbide. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2009. http://dx.doi.org/10.1002/9783527629077.

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Choyke, W. J., H. Matsunami i G. Pensl, red. Silicon Carbide. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1.

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Fan, Jiyang, i Paul K. Chu. Silicon Carbide Nanostructures. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08726-9.

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Silicon, Carbide Symposium (1987 Columbus Ohio). Silicon carbide '87. Westerville, Ohio: American Ceramic Society, 1989.

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Shigeyuki, Sōmiya, i Inomata Yoshizō, red. Silicon carbide ceramics. London: Elsevier Applied Science, 1991.

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Dobson, M. M. Silicon carbide alloys. Carnforth, Lancashire: Parthenon Press, 1986.

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Dobson, M. M. Silicon carbide alloys. Carnforth, Lancashire, England: Parthenon Press, 1986.

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Harris, Gary Lynn. Properties of silicon carbide. London: IEE, 1995.

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Sömiya, Shigeyuki, i Yoshizo Inomata, red. Silicon Carbide Ceramics—1. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3842-0.

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Części książek na temat "Silicon carbide"

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Sakwe, Sakwe Aloysius, Mathias Stockmeier, Philip Hens, Ralf Müller, Desirée Queren, Ulrike Kunecke, Katja Konias i in. "Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution". W Silicon Carbide, 1–31. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch1.

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Kimoto, Tsunenobu, Katsunori Danno i Jun Suda. "Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation". W Silicon Carbide, 267–86. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch10.

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Klein, Paul B. "Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n− 4H-SiC Epitaxial Layers". W Silicon Carbide, 287–317. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch11.

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Raynaud, Christophe, Duy-Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar i Dominique Planson. "Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization". W Silicon Carbide, 319–40. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch12.

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Hatakeyama, Tetsuo. "Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation". W Silicon Carbide, 341–62. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch13.

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Krieger, M., S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, G. Pensl, N. Hatta, M. Abe, H. Nagasawa i A. Schöner. "Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors". W Silicon Carbide, 363–74. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch14.

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Starke, Ulrich. "Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems". W Silicon Carbide, 375–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch15.

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Ke, Y., R. P. Devaty i W. J. Choyke. "Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces". W Silicon Carbide, 395–409. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch16.

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Zorman, Christian A., i Rocco J. Parro. "Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS". W Silicon Carbide, 411–51. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch17.

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Seyller, Th, A. Bostwick, K. V. Emtsev, K. Horn, L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg i F. Speck. "Epitaxial Graphene: A New Material". W Silicon Carbide, 453–72. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch18.

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Streszczenia konferencji na temat "Silicon carbide"

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Lin, Qiang. "Silicon Carbide Photonics". W Latin America Optics and Photonics Conference. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/laop.2014.ltu3a.3.

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Lescoat, F., F. Tanguy i P. Durand. "Silicon carbide metallization". W 2016 ESA Workshop on Aerospace EMC (Aerospace EMC). IEEE, 2016. http://dx.doi.org/10.1109/aeroemc.2016.7504558.

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Redkin, Sergey, Petr Maltsev i Sergey Gamkrelidze. "CUBIC SILICON CARBIDE ON SILICON". W International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1557.silicon-2020/62-68.

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A basic technology for cubic silicon carbide (3C-SiC) formation on silicon (Si) plates in high-frequency (HF and HFI) and very-high-frequency (microwave) discharges at low pressure has been developed. It is found that 3C-SiC layers formation on Si should be multiple staged, but integrated, i.e. sequential change of stages should be performed without working chamber deevacuating and accompanied only by changing modes, gaseous media and applying electrical displacement. The following technological mixtures have been proposed: SiF4 + CF4 + Ar; SiF4 + CH4 + Ar.
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Rybicki, G., C. Vargas-Aburto i R. Uribe. "Silicon carbide alphavoltaic battery". W Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.563955.

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Martini, Francesco, i Alberto Politi. "3C Silicon Carbide Nanophotonics". W Frontiers in Optics. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/fio.2016.fth4g.6.

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Kingsley, Lawrence E., Terrence Burke, Maurice Weiner, Robert J. Youmans, Hardev Singh, Walter R. Buchwald, Joseph R. Flemish, Jian H. Zhao i K. Xie. "Silicon carbide optoelectronic switches". W Photonics for Industrial Applications, redaktor William R. Donaldson. SPIE, 1995. http://dx.doi.org/10.1117/12.198650.

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Rogers, T. "Vapour deposited silicon carbide". W IEE Colloquium on Extremely Hard Materials for Micromechanics. IEE, 1997. http://dx.doi.org/10.1049/ic:19970337.

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Pehlivanoglu, I. Engin, Christian A. Zorman i Darrin J. Young. "Silicon carbide MEMS oscilator". W TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285388.

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Qiang Lin. "Silicon carbide nano-optomechanics". W 2014 IEEE Photonics Conference (IPC). IEEE, 2014. http://dx.doi.org/10.1109/ipcon.2014.6995460.

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Lu, Xiyuan, Jonathan Y. Lee i Qiang Lin. "Silicon carbide doubledisk optomechanics". W Frontiers in Optics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/fio.2015.fw6c.7.

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Raporty organizacyjne na temat "Silicon carbide"

1

House, M. B., i P. S. Day. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide. Office of Scientific and Technical Information (OSTI), maj 1997. http://dx.doi.org/10.2172/319834.

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Katoh, Yutai, Takaaki Koyanagi, Jim Kiggans, Nesrin Cetiner i Joel McDuffee. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS. Office of Scientific and Technical Information (OSTI), wrzesień 2014. http://dx.doi.org/10.2172/1164258.

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Rabin, B. A review of silicon carbide/metal interactions with relevance to silicon carbide joining. Office of Scientific and Technical Information (OSTI), kwiecień 1991. http://dx.doi.org/10.2172/5886805.

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Jan W. Nowok, John P. Hurley i John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), czerwiec 2000. http://dx.doi.org/10.2172/824976.

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Bleier, A. Dispersion aspects of silicon carbide gelcasting. Office of Scientific and Technical Information (OSTI), wrzesień 1991. http://dx.doi.org/10.2172/5003295.

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Bleier, A. Dispersion aspects of silicon carbide gelcasting. Office of Scientific and Technical Information (OSTI), wrzesień 1991. http://dx.doi.org/10.2172/10164777.

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Radhakrishnan, Rahul. Integrated Silicon Carbide Power Electronic Block. Office of Scientific and Technical Information (OSTI), listopad 2017. http://dx.doi.org/10.2172/1408273.

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Mackowski, Kristin Nicole, Joshua Damon Coe, Katie A. Maerzke i Sven Peter Rudin. Equation of State for Silicon Carbide. Office of Scientific and Technical Information (OSTI), sierpień 2018. http://dx.doi.org/10.2172/1467226.

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Grady, D., i M. Kipp. Shock compression properties of silicon carbide. Office of Scientific and Technical Information (OSTI), lipiec 1993. http://dx.doi.org/10.2172/10179836.

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Heinisch, H. L., E. T. Cheng i F. M. Mann. Revised activation estimates for silicon carbide. Office of Scientific and Technical Information (OSTI), październik 1996. http://dx.doi.org/10.2172/414861.

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