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Artykuły w czasopismach na temat "Silicon"
Renlund, Gary M., Svante Prochazka i Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties". Journal of Materials Research 6, nr 12 (grudzień 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.
Pełny tekst źródłaDeng, Xuebiao, Huai Chen i Zhenyu Yang. "Two-dimensional silicon nanomaterials for optoelectronics". Journal of Semiconductors 44, nr 4 (1.04.2023): 041101. http://dx.doi.org/10.1088/1674-4926/44/4/041101.
Pełny tekst źródłaSciortino, Francesco. "Silicon in silico". Nature Physics 7, nr 7 (lipiec 2011): 523–24. http://dx.doi.org/10.1038/nphys2038.
Pełny tekst źródłaNasution, Sarah Purnama. "PENGGUNAAN BAHAN SILIKON SEBAGAI ALTERNATIF PENGGANTI SEDOTAN PLASTIK". Jurnal Seni dan Reka Rancang: Jurnal Ilmiah Magister Desain 2, nr 1 (24.08.2021): 119–26. http://dx.doi.org/10.25105/jsrr.v2i1.10104.
Pełny tekst źródłaCassedanne, Jeannine Odette, i Hamílcar Freire de Carvalho. "Dosagem de silício em silico-fosfatos naturais". Anuário do Instituto de Geociências 13 (1.12.1990): 39–42. http://dx.doi.org/10.11137/1990_0_39-42.
Pełny tekst źródłaWang, Yalin. "Effect of Nano Titanium Oxide with Different Surface Treatments on Color Stability of Red-Tinted Silicone Rubber". International Journal of Analytical Chemistry 2022 (10.08.2022): 1–7. http://dx.doi.org/10.1155/2022/1334903.
Pełny tekst źródłaAbt, I., H. Fox, B. Moshous, R. H. Richter, K. Riechmann, M. Rietz, J. Riedl, R. St Denis i W. Wagner. "Gluing silicon with silicone". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 411, nr 1 (lipiec 1998): 191–96. http://dx.doi.org/10.1016/s0168-9002(98)00301-5.
Pełny tekst źródłaShrestha, Roshan P., i Mark Hildebrand. "Evidence for a Regulatory Role of Diatom Silicon Transporters in Cellular Silicon Responses". Eukaryotic Cell 14, nr 1 (7.11.2014): 29–40. http://dx.doi.org/10.1128/ec.00209-14.
Pełny tekst źródłaIto, Takuya, Yasuyuki Ota i Kensuke Nishioka. "Pattern Formation of Silicon Oxide Thin Film with InkMask". Applied Mechanics and Materials 481 (grudzień 2013): 98–101. http://dx.doi.org/10.4028/www.scientific.net/amm.481.98.
Pełny tekst źródłaHu, Qian, Zhengliang Xue, Shengqiang Song, Robert Cromarty i Yiliang Chen. "Utilization of Silicon Dust to Prepare Si3N4 Used for Steelmaking Additives: Thermodynamics and Kinetics". Processes 12, nr 2 (31.01.2024): 301. http://dx.doi.org/10.3390/pr12020301.
Pełny tekst źródłaRozprawy doktorskie na temat "Silicon"
Martinez, Nelson Yohan Reidy Richard F. "Wettability of silicon, silicon dioxide, and organosilicate glass". [Denton, Tex.] : University of North Texas, 2009. http://digital.library.unt.edu/ark:/67531/metadc12161.
Pełny tekst źródłaSavchyn, Oleksandr. "Silicon-sensitized erbium excitation in silicon-rich silica for integrated photonics". Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4642.
Pełny tekst źródłaID: 029094291; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references.
Ph.D.
Doctorate
Optics and Photonics
WHITLOCK, PATRICK W. "SILICON-BASED MATERIALS IN BIOLOGICAL ENVIRONMENTS". University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1116264213.
Pełny tekst źródłaMartinez, Nelson. "Wettability of Silicon, Silicon Dioxide, and Organosilicate Glass". Thesis, University of North Texas, 2009. https://digital.library.unt.edu/ark:/67531/metadc12161/.
Pełny tekst źródłaWalters, Robert Joseph Atwater Harry Albert. "Silicon nanocrystals for silicon photonics /". Diss., Pasadena, Calif. : California Institute of Technology, 2007. http://resolver.caltech.edu/CaltechETD:etd-06042007-160130.
Pełny tekst źródłaYeh, Jen-Yu. "Electron-beam biased reactive evaporation of silicon, silicon oxides, and silicon nitrides /". Online version of thesis, 1991. http://hdl.handle.net/1850/11106.
Pełny tekst źródłaDurham, Simon J. P. "Carbothermal reduction of silica to silicon nitride powder". Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=74221.
Pełny tekst źródłaSol-gel processing was found to provide superior mixing conditions over dry mixing, which allowed for complete conversion to silicon nitride at optimum carbon:silica ratios of 7:1. The ideal reaction temperature was found to be in the range of 1500$ sp circ$C to 1550$ sp circ$C. Suppression of silicon oxynitride and silicon carbide was achieved by ensuring that: (a) the nitrogen gas was gettered of oxygen, and (b) that the gas passed through the reactants. Thermodynamic modelling of the Si-O-N-C system showed that ordinarily the equilibrium conditions for the formation of silicon nitride are very delicate. Slight deviations away from equilibrium leads to the formation of non-equilibrium species such as silicon carbide caused by the build-up of carbon monoxide. Reaction conditions such as allowing nitrogen gas to pass through the reactants beneficially moves the reaction equilibrium well away from the silicon carbide and silicon oxynitride stability regions.
The particle size of silicon nitride produced from carbon and silica precursors was of the order of 2-3 $ mu$m and could only be reduced to sub-micron range by seeding with ultra-fine silicon nitride. It was shown that the mechanism of nucleation and growth of unseeded reactants was first nucleation on the carbon by the reaction between carbon, SiO gas and nitrogen (gas-solid reaction), and then growth of the particles by the gas phase reaction (CO, SiO, N$ sb2$).
Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum". Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.
Pełny tekst źródłaSiC was solid-state bonded to Mo at temperatures ranging from 1000$ sp circ$C to 1700$ sp circ$C. Diffusion of Si and C into Mo resulted in a reaction layer containing two main phases: $ rm Mo sb5Si sb3$ and Mo$ sb2$C. At temperatures higher than 1400$ sp circ$C diffusion of C into $ rm Mo sb5Si sb3$ stabilized a ternary phase of composition $ rm Mo sb5Si sb3$C. At 1700$ sp circ$C, the formation of MoC$ rm sb{1-x}$ was observed as a consequence of bulk diffusion of C into Mo$ sb2$C. A maximum average shear strength of 50 MPa was obtained for samples hot-pressed at 1400$ sp circ$C for 1 hour. Higher temperatures and longer times contributed to a reduction in the shear strength of the joints, due to the excessive growth of the interfacial reaction layer. $ rm Si sb3N sb4$ was joined to Mo in vacuum and nitrogen, at temperatures between 1000$ sp circ$C and 1800$ sp circ$C, for times varying from 15 minutes to 4 hours. Dissociation of $ rm Si sb3N sb4$ and diffusion of Si into Mo resulted in the formation of a reaction layer consisting, initially, of $ rm Mo sb3$Si. At 1600$ sp circ$C (in vacuum) Mo$ sb3$Si was partially transformed into $ rm Mo sb5Si sb3$ by diffusion of Si into the original silicide, and at higher temperatures, this transformation progressed extensively within the reaction zone. Residual N$ sb2$ gas, which originated from the decomposition of $ rm Si sb3N sb4,$ dissolved in the Mo, however, most of the gas escaped during bonding or remained trapped at the original $ rm Si sb3N sb4$-Mo interface, resulting in the formation of a porous layer. Joining in N$ sb2$ increased the stability of $ rm Si sb3N sb4,$ affecting the kinetics of the diffusion bonding process. The bonding environment did not affect the composition and morphology of the interfaces for the partial pressures of N$ sb2$ used. A maximum average shear strength of 57 MPa was obtained for samples hot-pressed in vacuum at 1400$ sp circ$C for 1 hour.
Pellegrino, Paolo. "Point Defects in Silicon and Silicon-Carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3133.
Pełny tekst źródłaTayarani-Najaran, M. H. "Traps at the silicon/silicon-dioxide heterojunction". Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278879.
Pełny tekst źródłaKsiążki na temat "Silicon"
Rochow, Eugene George. Silicone and silicones: About stone-age tools, antique pottery, modern ceramics, computers, space materials, and how they all got that way. Berlin: Springer-Verlag, 1987.
Znajdź pełny tekst źródłaRochow, Eugene George. Silicon and Silicones. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2.
Pełny tekst źródłaDavid, Evered, O'Connor Maeve i Symposium on Silicon Biochemistry (1985 : Ciba Foundation), red. Silicon biochemistry. Chichester [West Sussex]: Wiley, 1986.
Znajdź pełny tekst źródłaSiffert, P., i E. F. Krimmel, red. Silicon. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4.
Pełny tekst źródłaTocci, Salvatore. Silicon. New York: Children's Press, 2005.
Znajdź pełny tekst źródłaUnited States. Bureau of Mines, red. Silicon. Washington, D.C: Bureau of Mines, U.S. Dept. of the Interior, 1985.
Znajdź pełny tekst źródłaSilicon. New York: Rosen Pub. Group, 2008.
Znajdź pełny tekst źródłaRichards, Sally. Silicon Valley: Sand dreams & silicon orchards. Carlsbad, Calif: Heritage Media Corp., 2000.
Znajdź pełny tekst źródłaYou ji gui gao fen zi hua xue. Beijing: Ke xue chu ban she, 1998.
Znajdź pełny tekst źródłaFahrner, Wolfgang Rainer, red. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37039-7.
Pełny tekst źródłaCzęści książek na temat "Silicon"
Rochow, Eugene George. "Silicon: The Element". W Silicon and Silicones, 28–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_2.
Pełny tekst źródłaRochow, Eugene George. "The Historical Background". W Silicon and Silicones, 1–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_1.
Pełny tekst źródłaRochow, Eugene George. "The Discovery of the Other Half of Silicon Chemistry, and Its Consequences". W Silicon and Silicones, 40–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_3.
Pełny tekst źródłaRochow, Eugene George. "Necessity as the Mother of Invention: The Development of Practical Silicone Polymers in Answer to Industrial Need". W Silicon and Silicones, 54–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_4.
Pełny tekst źródłaRochow, Eugene George. "Liberation from Magnesium!" W Silicon and Silicones, 74–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_5.
Pełny tekst źródłaRochow, Eugene George. "Representative Types of Silicone Polymers and Some of Their Properties". W Silicon and Silicones, 94–128. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_6.
Pełny tekst źródłaRochow, Eugene George. "Some Interesting Applications". W Silicon and Silicones, 129–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_7.
Pełny tekst źródłaRochow, Eugene George. "Bio-organosilicon Chemistry and Related Fields". W Silicon and Silicones, 154–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_8.
Pełny tekst źródłaTan, Xin, Sean C. Smith i Zhongfang Chen. "Hexagonal honeycomb silicon: Silicene". W Silicon Nanomaterials Sourcebook, 171–88. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-8.
Pełny tekst źródłaLane, T. H., i S. A. Burns. "Silica, Silicon and Silicones...Unraveling the Mystery". W Current Topics in Microbiology and Immunology, 3–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-85226-8_1.
Pełny tekst źródłaStreszczenia konferencji na temat "Silicon"
Haschke, Jan, Raphaël Monnard, Luca Antognini, Jean Cattin, Amir A. Abdallah, Brahim Aïssa, Maulid M. Kivambe, Nouar Tabet, Mathieu Boccard i Christophe Ballif. "Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates". W SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049262.
Pełny tekst źródłaSturmberg, Björn C. P., Kokou B. Dossou, Lindsay C. Botten, Ara A. Asatryan, Christopher G. Poulton, C. Martijn de Sterke i Ross C. McPhedran. "Absorption of Silicon Nanowire Arrays on Silicon and Silica Substrates". W Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/pv.2011.pthb5.
Pełny tekst źródłaHendawi, Rania, Rune Søndenå, Arjan Ciftja, Gaute Stokkan, Lars Arnberg i Marisa Di Sabatino. "Microstructure and electrical properties of multi- crystalline silicon ingots made in silicon nitride crucibles". W SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089275.
Pełny tekst źródłaEzawa, Motohiko. "Silicene: Silicon-Based Topological Materials". W Proceedings of the International Symposium “Nanoscience and Quantum Physics 2012” (nanoPHYS’12). Journal of the Physical Society of Japan, 2015. http://dx.doi.org/10.7566/jpscp.4.012001.
Pełny tekst źródłaSalimi, Arghavan, Ergi Dönerçark, Mehmet Koç i Raşit Turan. "Silicon heterojunction solar cell efficiency improvement with wide optical band gap amorphous silicon carbide emitter". W SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140952.
Pełny tekst źródłaBoccard, Mathieu, Raphaël Monnard, Luca Antognini i Christophe Ballif. "Silicon oxide treatment to promote crystallinity of p-type microcrystalline layers for silicon heterojunction solar cells". W SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049266.
Pełny tekst źródłaGaspar, Guilherme, João M. Serra, Jonas Kern i Matthias Müller. "TCAD simulation of electrical characteristics of silicon tunnel junctions for monolithically integrated silicon/perovskite tandem solar cells". W SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0141125.
Pełny tekst źródłaTopcu, Seyma, Matteo Schiliró, Lydia Beisel, Pasky Wete, Kathrin Ohmer, Clara Aranda Alonso, Weiwei Zuo i in. "Towards 3-terminal perovskite/silicon tandem solar cells: Influence of silicon bottom cell on tandem cell fabrication". W SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140291.
Pełny tekst źródłaPayne, David, Tsun Hang Fung, Muhammad Umair Khan, Jose Cruz-Campa, Keith McIntosh i Malcolm Abbott. "Understanding the optics of industrial black silicon". W SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049297.
Pełny tekst źródłaNemeth, Bill, Steve Harvey, David Young, Matt Page, Vincenzo La Salvia, San Theingi i Pauls Stradins. "Self-assembled monolayers for silicon passivated contacts". W SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089764.
Pełny tekst źródłaRaporty organizacyjne na temat "Silicon"
Squires, B. D0 Silicon Upgrad: D0 Silicon Cooling System. Office of Scientific and Technical Information (OSTI), lipiec 1998. http://dx.doi.org/10.2172/1032104.
Pełny tekst źródłaHamza, A. V., i M. Balooch. Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon. Office of Scientific and Technical Information (OSTI), luty 1996. http://dx.doi.org/10.2172/231594.
Pełny tekst źródłaWeber, William P. Silicon Chemistry. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1988. http://dx.doi.org/10.21236/ada202897.
Pełny tekst źródłaMartin U. Pralle i James E. Carey. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices. Office of Scientific and Technical Information (OSTI), lipiec 2010. http://dx.doi.org/10.2172/984305.
Pełny tekst źródłaLorenz, Adam. 1366 Project Silicon: Reclaiming US Silicon PV Leadership. Office of Scientific and Technical Information (OSTI), luty 2016. http://dx.doi.org/10.2172/1238028.
Pełny tekst źródłaJan W. Nowok, John P. Hurley i John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), czerwiec 2000. http://dx.doi.org/10.2172/824976.
Pełny tekst źródłaDavis, Robert F., Salah Bedair, Jill Little, Robert Macintosh i Joe Sumakeris. Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1991. http://dx.doi.org/10.21236/ada231348.
Pełny tekst źródłaHouse, M. B., i P. S. Day. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide. Office of Scientific and Technical Information (OSTI), maj 1997. http://dx.doi.org/10.2172/319834.
Pełny tekst źródłaCease, Herman. D0 Silicon Upgrade: D-Zero Silicon Cooling System Description. Office of Scientific and Technical Information (OSTI), luty 2001. http://dx.doi.org/10.2172/1481379.
Pełny tekst źródłaChizmeshya, A., A. Demkov, T. Lenosky i O. Sankey. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces. Office of Scientific and Technical Information (OSTI), lipiec 1999. http://dx.doi.org/10.2172/13850.
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