Gotowe bibliografie tematyczne / SiC SBD

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Gotowa bibliografia na temat „SiC SBD”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "SiC SBD"

Nakanishi, Yosuke, Takaaki Tominaga, Hiroaki Okabe, Yoshiyuki Suehiro, Kazuyuki Sugahara, Takeharu Kuroiwa, Yoshihiko Toyoda i in. "Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate". Materials Science Forum 778-780 (luty 2014): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.820.

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One of the attractive methods to reduce the differential resistance of SiC devices is to make the thickness of a SiC substrate thinner [1]. Therefore, we fabricated SiC Schottky barrier diode (SBD) chips with a thickness below 150 μm and the properties of the SiC-SBD chips were measured. It was confirmed that the junction temperature of the thin SiC-SBD chips was decreased by the combination of the reduction in a thickness of the chip and the back side bonding of the chip using a material with high thermal conductivity. Moreover, it was confirmed that the potential of the thin SiC-SBD chip for the surge current capacity could be enhanced to combine the thin SiC-SBD chip with the back side bonding which has high thermal conductivity.

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Shilpa, A., S. Singh i N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors". Journal of Instrumentation 17, nr 11 (1.11.2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.

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Abstract Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC alpha particle Schottky radiation detectors for harsh environments. In particular, the study considers two types of 4H-SiC radiation detectors having Ni and Ti as Schottky contacts. They are fabricated by depositing Ni and Ti on 25 μm thick n-type 4H-SiC by epitaxially growing on 350 μm thick conducting SiC substrates. Electrical characterization and alpha spectral measurements performed on Ni/4H-SiC and Ti/4H-SiC SBDs are reported in this work. The spectral measurements were carried out using 241Am alpha emitting radioactive source. Ni/ 4H-SiC Schottky detector showed a better spectral response with 22.87 keV FWHM (∼ 0.416%) at a reverse bias of 150 V for 5.48 MeV alpha particles while Ti/4H-SiC Schottky detector achieved a resolution of 38.25 keV FWHM (∼ 0.697%) at 170 V reverse bias. This work presented spectral broadening analysis to understand the various factors affecting the energy resolution of the detectors. The extracted charge collection efficiencies (CCEs) are approximately 99% in both the detectors. In addition, polarization effects are not noticed in any of the fabricated detectors. The diffusion length of minority carriers (Lp ) is computed based on the drift-diffusion model by fitting the CCE curve as a function of applied bias, and the values are close to 9 μm and 7 μm for Ni/4H-SiC SBD and Ti/4H-SiC SBD detectors, respectively. Annealing at 400°C for 5 minutes in N2 ambient resulted in resolution of 23.98 keV FWHM (∼ 0.436%) for Ni/4H-SiC SBD detector at -170 V and 36.21 keV FWHM (∼ 0.661%) for Ti/4H-SiC SBD detector at -150 V. Overall Ni/4H-SiC SBD detectors showed superior spectral characteristics and superior resolution when compared to Ti/4H-SiC SBD detectors. However, the Ti/4H-SiC SBD detector fabricated in this work performed better than the previously reported work on a similar device structure. Hence, future work aimed at improving resolution of radiation detectors could also consider Ti/4H-SiC SBDs along with Ni/4H-SiC SBDs.

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Tominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa i Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD". Materials Science Forum 1004 (lipiec 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.

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A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

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Kinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura i Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height". Materials Science Forum 645-648 (kwiecień 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.

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It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD varies with annealing temperature. We fabricate 0.231mm2 SBD with Ti/SiC interface using Si-face and C-face 4H-SiC. These SBDs are annealed at several temperatures after a formation of the Ti/SiC interface. As a result, b of Ti/C-face 4H-SiC interface annealed at 400 oC is nearly equal to b of Ti/Si-face 4H-SiC interface annealed at 500 oC and the n-values of these SBDs are nearly equal to the ideal value (unity). Using that annealing condition, we fabricated 25mm2 junction barrier Schottky (JBS) diodes with Ti/SiC interface on Si-face and C-face 4H-SiC epitaxial substrate. b of Si-face and C-face JBS diodes are 1.26eV and 1.24eV, respectively. The leakage currents for both Si-face and C-face JBS diodes are less than 1mA/cm2. The current of 100A is obtained at the forward bias voltage of 1.95V and 2.16V for the Si-face JBS and the C-face JBS.

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Kong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang i Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance". Journal of Semiconductors 44, nr 5 (1.05.2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.

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Abstract A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp). The integrated Schottky barrier diode (SBD) also greatly improves the reverse recovery performance of the device. TCAD simulation results indicate that the R on,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm2 with a 2240 V breakdown voltage (BV), which is more than 72.4%, 23%, 5.6% lower than that of the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET with the 1950, 2220, and 2220 V BV, respectively. The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC, which are greatly reduced by more than 74% and 94% in comparison with those of all the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET, due to the integrated SBD in the proposed MOSFET. And the trade-off relationship between the R on,sp and the BV is also significantly improved compared with that of the conventional MOSFET, Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature, respectively. In addition, compared with conventional SJ SiC MOSFET, the proposed SiC MOSFET has better immunity to charge imbalance, which may bring great application prospects.

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Tezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda i Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices". Materials Science Forum 717-720 (maj 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.

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In this paper, we demonstrate the fabrication of SBD utilizing SiC process line specially designed for mass production of SiC power device. In SiC power device process, ion implantation and activation annealing are key technologies. Details of ion implantation system and activation annealing system designed for SiC power device production are shown. Further, device characteristics of SBD fabricated using this production line is also shown briefly.

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Kinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo i Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing". Materials Science Forum 556-557 (wrzesień 2007): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.877.

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Ion implantation and a subsequent annealing at high temperature are required for fabricating a high voltage Schottky Barrier Diode (SBD) with a field limiting ring (FLR) or a junction termination extension (JTE), but high temperature annealing degrades surface condition of a SiC substrate and induces a degradation of electronic characteristics of a fabricated SBD. To avoid a degradation of SBD electronic characteristics after high temperature annealing, the method of removing a degraded layer from a SiC surface by sacrificial oxidation after high temperature annealing is studied. In this study, we studied the relationship between the improvement of SBD electronic characteristics and the thickness of sacrificial oxide grown after high temperature annealing. 9~12 SBD without edge termination were fabricated on a SiC substrate of 4mm×4mm. The ratio of good chips to all chips (9~12 SBD) increases with increasing total thickness of sacrificial oxide grown after high temperature annealing at 1800oC for 30 s, where an SBD with a leakage current less than 1μA/cm2 at reverse voltage of –100V was defined as a good chip. We applied this process growing sacrificial oxide of 150nm after high temperature annealing to fabricate the SBD with an FLR structure designed with 600V blocking voltage on a Si-face SiC substrate. The SBD with an FLR structure through this process of 150 nm sacrificial oxide is low leakage current of less than 1μA/cm2 at reverse voltage of –100V and achieves 600V blocking voltage, however, the SBD with an FLR structure without the process of sacrificial oxide after high temperature annealing is high leakage current at reverse voltage of –100V. It is shown that this process growing sacrificial oxide after high temperature annealing is useful to fabricate an SBD with an FLR structure.

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Hatakeyama, Tetsuo, Johji Nishio i Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)". Materials Science Forum 483-485 (maj 2005): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.921.

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This paper describes process and device simulation results of SiC floating junction Schottky barrier diodes (Super-SBDs). Two-dimensional process simulation of a SiC device is implemented using the customized ISE’s process simulator “DIOS”. The simulation results reproduce the experimentally observed buried floating junction structure of a SiC Super-SBD. The device simulation method using the anisotropic impact ionization coefficients is formulated. The effect of anisotropic avalanche breakdown field on termination structures of SiC SBDs is examined. Finally, by the device simulation we have shown that the trade-off between the on-state resistance and the breakdown voltage of the super-SBD that contains two drift layers exceeds that of the conventional SBD.

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Yuan, Hao, Xiao Yan Tang, Yi Men Zhang, Yu Ming Zhang, Hong Liang Lv, Yue Hu Wang, Yu Fei Zhou i Qing Wen Song. "The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)". Materials Science Forum 778-780 (luty 2014): 812–15. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.812.

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Based on the theoretical analysis and the simulation results of the ion implantation process and the floating Junction structure, a 4H-SiC SBD with floating junction (FJ_SBD) is fabricated. Compared with the on-resistance 5.13 mΩ·cm2 of conventional SBD fabricated at the same time, the on-resistance of FJ_SBD with 3μm P+ buried box is only 6.29 mΩ·cm2. The breakdown voltage of the FJ_SBD reaches 950V which is much higher than the 430V of conventional SBD. According to the presented results, The BFOM of the FJ_SBD is 3 times higher than the value of the conventional SBD. It is proved that FJ-SBD has greater prospects for development.

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Ziko, Mehadi Hasan, Ants Koel, Toomas Rang i Muhammad Haroon Rashid. "Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding". Crystals 10, nr 8 (23.07.2020): 636. http://dx.doi.org/10.3390/cryst10080636.

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The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

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Rozprawy doktorskie na temat "SiC SBD"

Kaufmann, Ivan Rodrigo. "Diodos schottky de SiC para uso como detectores de energia de partículas carregadas". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/171046.

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Neste trabalho foram investigadas estruturas de diodos Schottky de carbeto de silício (SiC) com potencial uso em detectores de energia de partículas carregadas. Para tanto, foram fabricados diodos Schottky de SiC do tipo Metal-Isolador-Semicondutor (MIS). Uma estrutura MIS é considerada uma vez que o SiC sempre forma em sua superfície uma fina camada de oxicarbeto de silício (SiCxOy) nativo, de difícil remoção por ataques químicos. Foi desenvolvido um modelo modificado da teoria de Emissão Termiônica (TE), de modo a levar em conta o óxido nativo e/ou finas camadas dielétricas inseridas entre metal e semicondutor nas estruturas de diodos Schottky. Foram fabricadas estruturas alumínio/dielétrico/silício para caracterização dos dielétricos utilizados. Foram depositados os dielétricos de SiO2, TiO2, HfO2 e Al2O3 entre o metal Ni e o semicondutor de SiC, variando as espessuras de 1 a 8 nm. As espessuras depositadas foram confirmadas por Elipsometria espectral e Reflectometria de raio X, anteriormente à deposição por sputtering do contato Schottky de Ni. Após a deposição e o tratamento térmico do Ni, as estruturas de diodos Schottky foram caracterizadas eletricamente por meio de medidas de Corrente-Tensão (I-V) e Capacitância-Tensão (C-V), variando a temperatura de medida. Foi observado que a presença de uma fina camada dielétrica entre metal e semicondutor aumenta artificialmente a Altura da Barreira Schottky (SBH), diminuindo a corrente reversa quando o diodo é polarizado reversamente. Por meio do modelo modificado da TE, foi calculada uma espessura variando de 0.18 – 0.20 nm para o oxicarbeto de silício presente nos diodos estudados. As SBH reais foram extraídas por meio das medidas de I-V, variando-se a temperatura. Foram obtidos os valores da SBH de 1.39, 1.32 e 1.26 V, para os dielétricos TiO2, Al2O3, HfO2 e com 1 nm de espessura nominal cada, respectivamente. Para esses, o fator de idealidade calculado ficou próximo de 1. Espessuras de dielétricos acima de 4 nm começam a apresentar características de capacitores Metal-Óxido-Semicondutor e não de diodos Schottky. Por fim, reportamos as estruturas de Ni/Al2O3/4H-SiC/Ni e Ni/HfO2/4H-SiC/Ni, com 1 nm de dielétrico depositado, para uso como detector de partículas alfa no experimento de Espectrometria de Retroespalhamento Rutherford (RBS). Ambos os detectores apresentaram corrente reversa menor que 70 nA.cm-2 e resolução em energia de 76 keV, para polarização reversa de 40 V.
In the present work, silicon carbide (SiC) Schottky diodes with potential use in energy particle detectors were investigated. Metal-Insulator-Semiconductor (MIS) SiC Schottky diodes were fabricated. The MIS structures are considered because SiC always forms a thin native silicon oxycarbide (SiCxOy) layer in its surface that is difficult to remove by chemical means. A modified Thermionic Emission theory (TE) was developed to take into account the native oxide and/or thin dielectric layers present between metal and semiconductor in Schottky diodes. Aluminum/dielectric/silicon structures were fabricated for the dielectric characterization. SiO2, TiO2, HfO2 and Al2O3 dielectrics were deposited between Ni and SiC, with thicknesses varying from 1 to 8 nm. The deposited dielectrics layers thicknesses were confirmed by Ellipsometry spectra and X ray reflectometry before deposition of Ni Schottky contacts by sputtering. After Ni deposition and annealing, the Schottky diodes were electrically characterized by Current-Voltage (I-V) and Capacitance-Voltage measurements, varying the temperature. A thin dielectric layer present between metal and semiconductor artificially augments the Schottky Barrier Height (SBH) and lowers the reverse current when the diodes are reverse biased. A 0.18 – 0.20 nm of SiCxOy layer was inferred for the diodes using the modified TE. The real SBH was extracted from the I-V measurements and presented values of 1.39, 1.32 and 1.26 V for the diodes with 1 nm of TiO2, Al2O3 and HfO2, respectively. For these, an ideality factor close to 1 was calculated. Diodes with thicker (>4 nm) dielectrics layers shows Metal-Oxide-Semiconductor capacitors behavior. Ni/Al2O3/4H-SiC/Ni and Ni/HfO2/4H-SiC/Ni structures with 1 nm of dielectric layer thickness were used in Rutherford Backscattering Spectrometry experiments. Both detectors presented reverse current lower than 70 nA.cm-2 and energy resolution of 76 keV, when applied 40 V reverse bias.

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Im, Hsung J. "Metal Contacts to Silicon Carbide and Gallium Nitride Studied with Ballistic Electron Emission Microscopy". The Ohio State University, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=osu1000844302.

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Martínez, Diego Jessie. "Sistema baseado em conhecimento (SBC) de apoio à capacitação organizacional". reponame:Repositório Institucional da UFSC, 2017. https://repositorio.ufsc.br/xmlui/handle/123456789/179922.

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Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia e Gestão do Conhecimento, Florianópolis, 2017
Made available in DSpace on 2017-10-03T04:21:57Z (GMT). No. of bitstreams: 0 Previous issue date: 2017Bitstream added on 2017-10-10T04:17:28Z : No. of bitstreams: 1 348413.pdf: 2674098 bytes, checksum: 3230fa5ba691a556c5e1699a0eaa06a8 (MD5)
Evitar a perda da memória organizacional e a dependência de uma ou poucas pessoas é um desafio da Era do Conhecimento. Conhecimentos chave são aqueles vitais para o cumprimento da missão, permitem alcançar os objetivos estratégicos e estão alinhados com a construção da visão organizacional. Conhecimentos chave, independentes do nível (estratégico, tático ou operacional), criam vantagens competitivas de longo, médio e curto prazo. O objetivo desta pesquisa é propor um Sistema Baseado em Conhecimento (SBC) de apoio à capacitação organizacional. A aplicação foi realizada em uma instituição bancária. É utilizado um método que combina a metodologia de engenharia de ontologias e método incremental de desenvolvimento. Engenharia de ontologias é uma metodologia, da Engenharia do Conhecimento (EC), para o desenvolvimento ordenado e por etapas de SBC. O método incremental permite chegar de forma ágil no primeiro protótipo, para posteriormente, ir incorporando novas funcionalidades em ciclos curtos sucessivos. Como resultado deste trabalho, tem-se a proposta de um SBC, suportado por ontologia, para apoio ao aprendizado e ferramenta de consulta no domínio do curso Autorregulação Bancária - Conhecimentos Gerais. Adicionalmente, foram propostas métricas de avaliação do desempenho da Gestão do Conhecimento (GC) para este e outros cursos de capacitação semelhantes na organização. A aplicação do método permitiu concluir que a metodologia híbrida, aqui proposta, auxilia efetivamente o desenvolvimento de SBC de apoio à capacitação organizacional, pudendo ser replicável em outros cursos, e tendo como critérios fundamentais a agregação de valor, a escalabilidade e a interoperabilidade.
Abstract: A challenge of the Knowledge Age is avoiding loss of organizational memory and reducing dependence on few people's knowledge. Key knowledge is vital to mission fulfillment, drives the achievement of strategic objectives and is aligned with pursuing the organization's vision. Key knowledge, independent of the level (strategic, tactical or operational), creates long, medium or short term competitive advantages. The objective of this research is to propose a Knowledge Based System (KBS) to support organizational training. The research was applied at a financial institution. A method that combines ontology engineering methodology and incremental development method was used. Engineering of ontologies is a methodology, of Knowledge Engineering (KE), for the orderly and stepwise development of KBS. The incremental method allows arriving in an agile way in the first prototype, and then, incorporate new functionalities in successive short cycles. As a result of this work, there is a proposal of a KBS, based on ontology, to support learning and serving as query tool in the field of the course Banking Self-Regulation - General Knowledge. Additionally, metrics were proposed to measure the performance of Knowledge Management (KM) for this, and other similar training courses in the organization. Applying the method shows that the hybrid methodology proposed here effectively assists the development of SBC in support of organizational training, being able to be replicable in other courses, and having as fundamental criteria adding value, scalability and interoperability.

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Sahlberg, Bo. "Indoor Environment in Dwellings and Sick Building Syndrome (SBS) : Longitudinal Studies". Doctoral thesis, Uppsala universitet, Arbets- och miljömedicin, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-172769.

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People spend most of their time indoors and mostly in the dwelling. It is therefore important to investigate associations between indoor exposure in dwellings and health. Symptoms that may be related to the indoor environment are sometimes referred to as the "sick building syndrome" (SBS). SBS involves symptoms such as eye, skin and upper airway irritation, headache and fatigue. Three longitudinal studies and one prevalence study on personal and environmental risk factors for SBS in adults were performed. The prevalence study included measurements of indoor exposures in the dwellings. The longitudinal studies, with 8-10 years follow-up time, showed that smoking and indoor paint emissions were risk factors for SBS. Moreover, building dampness and moulds in dwellings were risk factors for onset (incidence) of general symptoms, skin symptoms and mucosal symptoms. In addition subjects living in damp dwellings have a lower remission of general symptoms and skin symptoms. Hay fever was a risk factor for onset of skin symptoms and mucosal symptoms, and asthma was a risk factor for onset of general and mucosal symptoms. Biomarkers of allergy and inflammation (bronchial reactivity, total IgE, ECP and eosinophil count) were predictors of onset of SBS symptoms, in particular mucosal symptoms. In the prevalence study, any SBS-symptom was associated with some individual volatile organic compounds of possible microbial origin (MVOC) e.g. 2-pentanol, 2-hexanon, 2-pentylfuran and 1-octen-3ol. Moreover, there were associations between indoor levels of formaldehyde and the plasticizer Texanol and any SBS. The result from the study indicates that individual MVOC are better indicators of SBS than the total value of MVOC. A final conclusion is that smoking, dampness and moulds and emissions from indoor painting may increase the onset of SBS. The indoor environment in dwellings over time has improved, but there is still a need for further improvements of the indoor environment in dwellings. More longitudinal SBS studies are needed.

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Haouche, Corinne. "Utilisation des concepts de l'acquisition des connaissances pour valider un SBC". Paris 9, 1995. https://portail.bu.dauphine.fr/fileviewer/index.php?doc=1995PA090016.

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Notre travail consiste à exploiter un modèle conceptuel « à la KADS » comme un ensemble de spécifications pour une validation au niveau connaissance des systèmes à base de connaissances. Nous proposons une méthode s'inspirant du test en boite blanche et utilisant des spécifications « à la KADS » et reconstruites en reverse-engineering. Cette méthode consiste à construire un chemin d'inférence courant (CIC), c'est-à-dire une abstraction au niveau des connaissances d'une trace de niveau code. Ce CIC est ensuite comparé à l'ensemble des chemins d'inférences valides (CIV) dérivé de la structure d'inférence de notre modèle conceptuel. Lorsque le CIC appartient à CIV, la procédure de test est itérée sur d'autres données de test ; sinon l'expert intervient pour indiquer si ce CIC est un chemin d'inférence valide, auquel cas CIV et la structure d'inférence sont mis à jour, ou s'il est invalide, auquel cas le code doit être corrigé. Cette méthode permet ainsi de faire évoluer le SBC et son modèle conceptuel pour que la tache assignée au SBC soit effectivement réalisée. Cette méthode a été utilisée pour valider un prototype, le système AMD, dont nous avons reconstruit un modèle conceptuel en reverse-engineering. Cela nous a permis de détecter certaines erreurs au niveau d'AMD et de mettre au jour le fait qu'un modèle conceptuel « à la KADS » doit être exprimé en terme de connaissances du domaine pour être exploitable dans une phase de validation
This work deals with the validation of Knowledge-Based Systems. Knowledge acquisition, and especially the conceptual modelling of knowledge provides conceptual models which can be considered as high-level specifications of the KBS. This work is a proposal for a testing method, close to white box testing, but which uses a KADS conceptual model built in reverse-engineering, as a set of specifications. When the system is run, a high-level trace called a current inference path (CIP) is built. Then it is compared to the inference structure. If this CIP does not match the inference structure, either the KBS or the conceptual model is updated. Thus, the specifications and the KBS can evolve concurrently to achieve the actual task assigned to the system. This method has been used to build a conceptual model. The results of this method are twofold. On the one hand some runtime errors were detected; on the other hand, it has lead us to conclude that a KADS conceptual model must be expressed using the domain knowledge in order to be exploitable in a validation process

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Sidiropoulou, Christina. "VoIP Operators : From a Carrier Point of View". Thesis, KTH, Kommunikationssystem, CoS, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91048.

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Voice over Internet Protocol (VoIP) is a service that has recently gained a lot of attention from the telecommunications (telecom) world since both Internet service providers (ISPs) and telecommunications operators have realized the important advantages that it can offer. Although traditional telephony is well established both in the telecom world and in our daily lives, VoIP is now competing with it by offering cost savings, simplicity, and introducing new ways of communicating. Internet service providers have already started deploying efficient VoIP services for their customers and carriers are transforming their network infrastructures in order to be able to accommodate the requirements of VoIP traffic. There are a lot of essential factors that both providers and carriers have to take into consideration in order to efficiently build and operate VoIP technologies. Proper service planning and well-established monitoring and troubleshooting procedures are vital for successful VoIP service. This thesis focuses on commercial VoIP implementation at the carrier’s side and investigates how a carrier can efficiently maintain and troubleshoot their VoIP infrastructure so as to comply with the Service Level Agreements (SLAs) they have signed with their customers (ISP providers), as well as analyses proactive actions that can betaken for minimizing the resources required for customer support. As an outcome, this thesis presents efficient ways of network planning and monitoring, as well as it provides conclusions regarding what are the efficient methods for troubleshooting the carrier’s VoIP products inboth technical and organizational level.
Röst över Internet Protokoll (VoIP) är en tjänst som nyligen har fått ökad uppmärksamhet inom telekommunikations (telecom) branschen eftersom att både Internetleverantörer (ISPs) och telecom operatörer har insett vilka fördelar som tjänsten erbjuder. Även om traditionell telefoni är väl etablerad i både telecombranschen och vår vardag, så kan VoIP konkurrera genom att erbjuda kostnadsbesparingar, förenkling, och introducera nya sätt att kommunicera på. IP leverantörer har redan påbörjat lansering av effektiva VoIP tjänster till sina kunder och telecom carriers bygger om sin nätverksstruktur för att möta kraven av VoIP traffik. Det finns många faktorer att bejaka för både IP leverantörer och telecom carriers för att effektivt bygga och driva VoIP nätverk. Noggrann produktplanering och väletablerad övervakning samt felsökningsprocedurer är en vital del i en framgångsrik VoIP tjänst. Denna avhandling fokuserar på VoIP implementering hos en telecom carrier och hur en telecom carrier effektivt kan underhålla och felsöka VoIP infrastruktur för att möta de servicenivåavtal de har skrivit med sina kunder (IP leverantörer), samt analysera det förebyggande åtgärder som kan tas för att minimera de resurser som behövs till kundtjänst. Denna avhandling presenteras effektiva tillvägagångssätt för planering och övervakning samt erbjuder effektiva,teknisk och organisationella metoder för felsökning av en telecom carriers VoIP produkter.

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Schellenberg, Ingra. "Depression as disease, exploring the slippery slope between feeling sad and being sick". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp01/MQ52947.pdf.

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Pires, João Batista. "Governança, políticas públicas de cultura e as realidades locais: o caso VAI-SBC". Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/100/100135/tde-20072017-091753/.

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Trata-se do processo de disseminação ou difusão de políticas públicas de cultura, a partir da análise de implantação do Programa de Valorização de Iniciativas Culturais, VAI-SBC, programa de fomento à produção cultural da prefeitura de São Bernardo do Campo, em relação com o programa homônimo e sua matriz conceitual, o Programa VAI, desenvolvido na cidade de São Paulo. Embora ambos se filiem ao mesmo campo político-ideológico, ao ser adaptado à localidade do Grande ABC, variáveis internas e externas ao programa, tais como a experiência acumulada pelos fazedores de política (policy makers), os constrangimentos impostos pela situação político-administrativa do município e as características de desenvolvimento especificas do campo cultural local influenciaram o modo como ocorreu a escolha do modelo de formulação, agindo decisivamente na construção do seu objeto e de suas diretrizes. O estudo foi realizado a partir de pesquisa de documentos, leis, imprensa comercial e oficial, programas, entrevistas, depoimentos, projetos e ações, considerando aspectos políticos, culturais, artísticos e sociais na realização da política pública de cultura
It is about the process of dissemination or diffusion of culture public policies, from the analysis of the Cultural Initiatives Valuation Program, VAI-SBC, development program to cultural production of the São Bernardo do Campos city hall, in relation to the homonym program and its conceptual basis, the VAI Program, developed on the city of São Paulo. Although both join the same political-ideological field, when being adapted to the location of Grande ABC, internal and external variables to the program, such as the accumulated experience by the policy makers, the embarrassments imposed by the political-management situation of the city hall and the development characteristics of the local cultural field, influenced the way how the choice of the formulation model occurred, acting decisively on the construction of its object and its guidelines. The study was based on research on documents, laws, commercial and official press, programs, interviews, testimonies, projects and actions, considering politcal, cultural, artistic and social aspects in the accomplishment of the public policy of culture

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Zvolánek, Jiří. "Návrh RNAV SID a STAR tratí pro letiště Brno Tuřany". Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-229209.

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The main content of this master’s thesis is design of RNAV SID and STAR routes for Brno Tuřany Airport. The study analyses usage of current conventional instrument arrivals and departures published for the aerodrome and describes its TMA. The new precision RNAV routes and the terminal area are designed based on the indentified information. A detailed construction of the chosen departure procedure is enclosed.

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Khoukhi, Faddoul. "Approche logico-symbolique dans le traitement des connaissances incertaines et imprecises dans les sbc". Reims, 1996. http://www.theses.fr/1996REIMS014.

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L'un des problemes les plus importants en informatique, et plus particulierement en intelligence artificielle, depuis l'apparition de l'ordinateur, est la simulation du processus d'automatisation du raisonnement humain, notamment dans les systemes a base de connaissances. Le raisonnement dans les systemes a base de connaissances est multiforme. En effet, les qualificatifs associes generalement au mot raisonnement correspondent soit a la nature du raisonnement (raisonnement hypothetique, analogique, etc. ), soit a la nature des connaissances capables de realiser des fonctions de raisonnement. Ainsi, la modelisation du raisonnement constitue, a l'heure actuelle une part importante des recherches et des developpements en intelligence artificielle. De tels systemes necessitent en particulier une representation adequate, des connaissances mises en jeu et des mecanismes efficaces d'exploitation de ces connaissances (raisonnement). Les deux aspects, de representation des connaissances et du traitement, sont etroitement lies. Le raisonnement humain s'appuie frequemment sur des connaissances et des donnees peu exactes, incertaines ou encore dont l'expression verbale est elle-meme entachee d'imprecision. Modeliser ce type de connaissances et automatiser le raisonnement capable de le prendre en compte est une activite importante en intelligence artificielle et implique, de ce fait, l'elaboration d'un formalisme permettant de representer les connaissances, et d'une methode permettant de les manipuler. De nombreux formalismes de representation des connaissances resultent des travaux effectues en logique mathematique, en theorie des graphes, en psychologie cognitive et en informatique. Dans cette these, nous proposons une approche logico-symbolique pour le traitement des connaissances imprecises et/ou incertaines dans les systemes a base de connaissances basee essentiellement sur la logique des propositions multivalentes et la theorie des probabilites symboliques

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Książki na temat "SiC SBD"

Doll, Thomas E. SBC Helldiver in action. Carrollton, TX: Squadron/Signal Publications, 1995.

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Patrick, Reusse, red. Sid! St. Paul: MBI Pub. Company LLC, 2007.

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Standard building contract: Guide : SBC/G. London: Sweet and Maxwell, 2005.

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Standard building contract: With quantities : SBC/Q. London: Sweet & Maxwell, 2005.

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Corporation, Swiss Bank, red. SBC European Art Competition 1995: The finalists. London: SBC Warburg, 1995.

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McCubbin, Chris. Sid Meier's Alpha centauri. [Rocklin, Calif.]: Prima Games, 1999.

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Ferrell, Keith. The official guide to Sid Meier's Civilization. Greensboro, N.C: Compute Books, 1992.

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Smith, Shelton L. SBC conservative "take-over" not a "make-over": 18 years after the "take-over," conservative SBC leadership faltering, failing. Murfreesboro, TN: Sword of the Lord Publishers, 1997.

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Cox, Alex. Sid and Nancy: Love kills. Boston: Faber and Faber, 1986.

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Części książek na temat "SiC SBD"

Nishikawa, Koichi, Yuusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato i Hiroaki Iwakuro. "Reverse Biased Electrochemical Etching of SiC-SBD". W Materials Science Forum, 419–22. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.419.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami i Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules". W Silicon Carbide and Related Materials 2005, 1289–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.

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Hatakeyama, Tetsuo, Chiharu Ota, Johji Nishio i Takashi Shinohe. "Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices". W Silicon Carbide and Related Materials 2005, 1179–82. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1179.

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Kim, S. J., S. Kim, Sang Cheol Kim, In Ho Kang, K. H. Lee i T. Matsuoka. "FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD". W Materials Science Forum, 869–72. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.869.

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Hatakeyama, Tetsuo, Johji Nishio i Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)". W Materials Science Forum, 921–24. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.921.

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Kim, S. J., Y. S. Choi, S. J. Yu, Sang Cheol Kim, Wook Bahng i K. H. Lee. "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination". W Materials Science Forum, 861–64. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.861.

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Kinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo i Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing". W Materials Science Forum, 877–80. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.877.

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Altieri, Riccardo. "Rosi Wolfstein - Ein Leben im Schatten der Kriege des 20. Jahrhunderts". W Historische Geschlechterforschung, 321–40. Bielefeld, Germany: transcript Verlag, 2021. http://dx.doi.org/10.14361/9783839457641-018.

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Riccardo Altieri widmet sich in diesem Beitrag der Biografie Rosi Wolfsteins, die sich als Sozialistin einem Leben für den Frieden verschrieben hatte. Sie erlebte die Ungerechtigkeit kriegerischer Auseinandersetzungen mit, trat in die SPD ein, nur um im Zuge des Ersten Weltkrieges in die USPD einzutreten, weil die SPD ihre Haltung zum Krieg geändert hatte. 1919 wurde sie Mitglied der KPD, später der KPO und dann der SAP, ehe sie 1933 Deutschland verlassen musste. Den Zweiten Weltkrieg verbrachte sie als Jüdin im Exil und trat aktiv für Frieden und Völkerverständigung ein. Den Kalten Krieg nahm sie bis zu ihrem Tod als enorme Bedrohung wahr, erlebte sein Ende jedoch nicht mehr mit. Sie starb 1987 in ihrem 100. Lebensjahr.

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Schaarschmidt, Thomas. "Gedenkstätten heute im Spannungsfeld von Erwartungsdruck, Opferkonkurrenzen und falschen Maßstäben". W Public History - Angewandte Geschichte, 51–58. Bielefeld, Germany: transcript Verlag, 2023. http://dx.doi.org/10.14361/9783839464250-006.

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Thomas Schaarschmidt behandelt in seinem Beitrag den aktuellen Standort von Gedenkstätten zur NS-Diktatur und zur SBZ/DDR in der deutschen Erinnerungskultur nach dem Ende der SED-Diktatur. Während der Ausbau der Gedenkstätten seit den 1990er Jahren vorangetrieben wurde, drohten sie von neuen Opferkonkurrenzen, wachsenden politischen und gesellschaftlichen Erwartungen an ihre Arbeit und eigenen Ansprüchen an eine komplexe Geschichtsvermittlung überfordert zu werden. Obwohl Gedenkstätten heute unumstrittene Institutionen der historisch-politischen Bildung sind, dienen sie nicht der Affirmation eines verordneten Geschichtsbilds, sondern bieten mit ihren Ausstellungen und pädagogischen Angeboten immer wieder neue Anstöße zur Aushandlung kontroverser Geschichtsdeutungen und Perspektiven für die Bewältigung gesellschaftlicher Herausforderungen.

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Kant, Bernhard. "Elektrohydraulische Bremse SBC". W Bremsen und Bremsregelsysteme, 150–53. Wiesbaden: Vieweg+Teubner Verlag, 2010. http://dx.doi.org/10.1007/978-3-8348-9714-5_11.

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Streszczenia konferencji na temat "SiC SBD"

Omura, I., M. Tsukuda, W. Saito i T. Domon. "High Power Density Converter using SiC-SBD". W 2007 Power Conversion Conference - Nagoya. IEEE, 2007. http://dx.doi.org/10.1109/pccon.2007.373024.

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Takao, K., Y. Hayashi i H. Ohashi. "Study on High Frequency Limitation of SJ-MOSFET/SiC-SBD pair in Comparison with Normal MOSFET/SiC-SBD pair". W 2007 Power Conversion Conference - Nagoya. IEEE, 2007. http://dx.doi.org/10.1109/pccon.2007.373093.

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Valdez-Nava, Zarel, Masahiro Kozako, Sorin Dinculescu, Ichiro Omura, Masayuki Hikita i Thierry Lebey. "Packaging of SiC-SBD for high temperature operation". W 2012 14th International Conference on Electronic Materials and Packaging (EMAP). IEEE, 2012. http://dx.doi.org/10.1109/emap.2012.6507921.

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Tominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa i Naruhisa Miura. "Superior Switching Characteristics of SiC-MOSFET Embedding SBD". W 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2019. http://dx.doi.org/10.1109/ispsd.2019.8757664.

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Chao, Zhang, Tang Xiao-Yan, Zhang Yu-Ming, Wang Wen i Zhang Yi-Men. "a DC-DC boost converter based on SiC MOSFET and SiC SBD". W 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2011. http://dx.doi.org/10.1109/edssc.2011.6117660.

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Chen, Gang, Yinglu Fang, Yun Li, Lin Wang, Song Bai, Ao Liu, Runhua Huang, Yonghong Tao i Zhifei Zhao. "Fabrication and Characterization of 1200V 40A 4H-SiC SBD". W 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/ifeea-15.2016.12.

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Huang, Runhua, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li, Yun Li i Zhifei Zhao. "Development of g10kv 4H-SiC SBD junction extension termination". W 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/aest-16.2016.111.

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Zhang, Fasheng, i Xinran Li. "The Simulation Breakdown Characteristic of 4H-SiC SBD with Field Rings". W 2010 International Conference on Electrical and Control Engineering (ICECE). IEEE, 2010. http://dx.doi.org/10.1109/icece.2010.760.

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Nagahisa, Yuichi, Shiro Hino, Hideyuki Hatta, Koutarou Kawahara, Shingo Tomohisa i Naruhisa Miura. "Novel Termination Structure Eliminating Bipolar Degradation of SBD-embedded SiC-MOSFET". W 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. http://dx.doi.org/10.1109/ispsd46842.2020.9170088.

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Yuan, Min, Houcai Luo, Chunjian Tan, Quan Zhou, Luqi Tao, Huaiyu Ye i Xianping Chen. "Design and Simulation of 1800V 40A 4H-SiC SBD Using TCAD". W 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). IEEE, 2018. http://dx.doi.org/10.1109/ifws.2018.8587388.

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Raporty organizacyjne na temat "SiC SBD"

Camarillo, G., R. Penfield, A. Hawrylyshen i M. Bhatia. Requirements from Session Initiation Protocol (SIP) Session Border Control (SBC) Deployments. Redaktor J. Hautakorpi. RFC Editor, kwiecień 2010. http://dx.doi.org/10.17487/rfc5853.

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Berger, E. L., V. Guarino, J. Repond, H. Weerts, L. Xia, J. Zhang, Q. Zhang i in. SiD Letter of Intent. Redaktorzy H. ,. Aihara, P. ,. Burrows i M. ,. Oreglia. Office of Scientific and Technical Information (OSTI), kwiecień 2012. http://dx.doi.org/10.2172/1038429.

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Kajikawa, R. Precision Test at SLC/SLD. Office of Scientific and Technical Information (OSTI), listopad 2003. http://dx.doi.org/10.2172/826547.

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Frey, Raymond. Recent Electroweak Results from SLC/SLD. Office of Scientific and Technical Information (OSTI), czerwiec 2003. http://dx.doi.org/10.2172/813212.

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Tantsura, J., U. Chunduri, S. Aldrin i P. Psenak. Signaling Maximum SID Depth (MSD) Using OSPF. RFC Editor, grudzień 2018. http://dx.doi.org/10.17487/rfc8476.

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Larkin, Ariana Kayla. Rad-Hard SBC: Radiation-Hardened Single-Board Computer. Office of Scientific and Technical Information (OSTI), listopad 2019. http://dx.doi.org/10.2172/1575755.

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Tantsura, J., U. Chunduri, S. Aldrin i L. Ginsberg. Signaling Maximum SID Depth (MSD) Using IS-IS. RFC Editor, listopad 2018. http://dx.doi.org/10.17487/rfc8491.

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Denisov, D. S., N. V. Mokhov, S. I. Striganov, M. A. Kostin i I. S. Tropin. Machine-Related Backgrounds in the SiD Detector at ILC. Office of Scientific and Technical Information (OSTI), sierpień 2006. http://dx.doi.org/10.2172/892406.

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Hutchinson, Paul, Adolor Aisiri, Udochisom Anaba, Elizabeth Omoluabi, Akanni Akinyemi, U. C. Ifunanya Ozoadibe i Dele Abegunde. Behavioral sentinel surveillance survey in Nigeria: Endline technical report. Population Council, czerwiec 2023. http://dx.doi.org/10.31899/sbsr2023.1020.

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This technical report presents results from the Behavioral Sentinel Surveillance (BSS) endline survey undertaken by Breakthrough RESEARCH/Nigeria in Kebbi, Sokoto, and Zamfara states between October 1 and November 10, 2022. BSS surveys are intended to assess changes in indicators targeted by the integrated social and behavior change (SBC) activities of the USAID-funded Breakthrough ACTION/Nigeria project. The Breakthrough ACTION/Nigeria project, which began in 2019 and is slated to run until 2025, focuses on the health areas of malaria; family planning; and maternal, newborn, and child health plus nutrition (MNCH+N) in Kebbi and Sokoto states, as well as malaria-only SBC activities in Zamfara State. The project uses three primary SBC approaches: advocacy outreach to opinion leaders and community influencers at the state and local government area (LGA) levels, direct engagement of community members through community dialogues and group meetings, and SBC messaging campaigns through mass media and digital media. The primary objective of this study is to compare the effectiveness of integrated SBC programming, as implemented by Breakthrough ACTION/Nigeria in Kebbi and Sokoto states, with single-focused vertical SBC programming, used by Breakthrough ACTION/Nigeria to target malaria outcomes in Zamfara state.

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Brau, James E., i Marcel Demarteau. SiD Linear Collider Detector R&D, DOE Final Report. Office of Scientific and Technical Information (OSTI), maj 2015. http://dx.doi.org/10.2172/1182602.

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