Gotowe bibliografie tematyczne / Si quantum well

Gotowa bibliografia na temat „Si quantum well”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 19 lutego 2022

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Artykuły w czasopismach na temat "Si quantum well"

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Kuo, P. S., C. Y. Peng, C. H. Lee, Y. Y. Shen, H. C. Chang i C. W. Liu. "Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes". Applied Physics Letters 94, nr 10 (9.03.2009): 103512. http://dx.doi.org/10.1063/1.3099337.

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Ren, Shang Yuan, John D. Dow i Jun Shen. "Criteria for Si quantum‐well luminescence". Journal of Applied Physics 73, nr 12 (15.06.1993): 8458–62. http://dx.doi.org/10.1063/1.353419.

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Miller, David, R. K. Schaevitz, J. E. Roth, Shen Ren i Onur Fidaner. "Ge Quantum Well Modulators on Si". ECS Transactions 16, nr 10 (18.12.2019): 851–56. http://dx.doi.org/10.1149/1.2986844.

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Qasaimeh, O., i P. Bhattacharya. "SiGe-Si quantum-well electroabsorption modulators". IEEE Photonics Technology Letters 10, nr 6 (czerwiec 1998): 807–9. http://dx.doi.org/10.1109/68.681491.

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Robbins, D. J., M. B. Stanaway, W. Y. Leong, J. L. Glasper i C. Pickering. "Si1?XGeX/Si quantum well infrared photodetectors". Journal of Materials Science: Materials in Electronics 6, nr 5 (październik 1995): 363–67. http://dx.doi.org/10.1007/bf00125893.

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Rölver, R., B. Berghoff, D. L. Bätzner, B. Spangenberg i H. Kurz. "Lateral Si∕SiO2 quantum well solar cells". Applied Physics Letters 92, nr 21 (26.05.2008): 212108. http://dx.doi.org/10.1063/1.2936308.

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Lee, J., S. H. Li, J. Singh i P. K. Bhattacharya. "Low-Temperature photoluminescence of SiGe/Si disordered multiple quantum wells and quantum well wires". Journal of Electronic Materials 23, nr 8 (sierpień 1994): 831–33. http://dx.doi.org/10.1007/bf02651380.

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Sasaki, Kohei, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki i Tohru Okamoto. "Well-width dependence of valley splitting in Si/SiGe quantum wells". Applied Physics Letters 95, nr 22 (30.11.2009): 222109. http://dx.doi.org/10.1063/1.3270539.

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ABRAMOV, ARNOLD. "RESONANT DONOR STATES IN QUANTUM WELL". Modern Physics Letters B 25, nr 02 (20.01.2011): 89–96. http://dx.doi.org/10.1142/s0217984911025493.

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A method of calculation of donor impurity states in a quantum well is developed. The used techniques have made it possible to find the binding energy both of ground and excited impurity states attached to each QW subband. The positions of the resonant states in 2D continuum are determined as poles of corresponding wave functions. As a result of such an approach the identification of resonant states in 2D continuum is avoided, introducing special criterions. The calculated dependences of binding energies versus impurity position are presented for various widths of Si / Si 1-x Ge x quantum wells.
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Nayak, D. K., J. C. S. Woo, J. S. Park, K. L. Wang i K. P. MacWilliams. "Hole confinement in a Si/GeSi/Si quantum well on SIMOX". IEEE Transactions on Electron Devices 43, nr 1 (1996): 180–82. http://dx.doi.org/10.1109/16.477614.

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Rozprawy doktorskie na temat "Si quantum well"

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Tasmin, Tania. "Design of SiGe/Si quantum-well optical modulators". Thesis, University of British Columbia, 2010. http://hdl.handle.net/2429/27904.

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An electro-optic modulator containing a single SiGe/Si quantum-well has been designed for operation at λ₀= 1.55 µm. This single quantum-well modulator has a lower VπLπ than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at λ₀= 1.31 µm, for which the VπLπ product was 1.8 V•cm [25]. Both modulators are derived from the detailed design given for their modulator in [40]. This single quantum-well modulator contains a Si₀.₈Ge₀.₂ quantum-well with Non-Intentionally Doped (NID) and P⁺ highly doped layers on either side. With no field applied, holes from the P⁺ layers are captured by and confined in the quantum-well and when a reverse bias is applied holes are released from the quantum well and drift to the P⁺ contact layer. Variations of the hole distribution lead to changes in the free-carrier absorption and the refractive index of each layer and subsequently to phase modulation of guided TE modes. The VπLπ product of the single quantum-well modulator is estimated 1.09 V•cm for low voltage linear modulation and 1.208 V•cm for 0 to 1.6 V digital modulation, whereas the 3 quantum-well modulator gives a VπLπ of 2.039 V•cm for 0 to 6 V digital modulation for operation at λ₀= 1.55 µm. Also, the optical loss in the single quantum-well (5.36 dB/cm at V=0 V) is lower than that of the 3 quantum-well structure (5.75 dB/cm at V=0 V). This single quantum-well modulator should also offer higher frequency operation than the 3 quantum-well modulator.
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Becker, Christian Eberhard. "Transport properties of modulation doped Si/SiGe quantum well structures". Thesis, University College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404404.

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Cho, Eun Chel Electrical Engineering UNSW. "Optical transitions in SiO2/crystalline Si/SiO2 quantum wells and nanocrystalline silicon (nc-Si)/SiO2 superlattice fabrication (Restricted for 24 months until Feb. 2006)". Awarded by:University of New South Wales. Electrical Engineering, 2003. http://handle.unsw.edu.au/1959.4/22492.

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Innovation in photovoltaic technology may offer cost competitive options to other energy sources and become a viable solution for the energy and environmental challenges of the 21st century. One proposed innovative technology is based on all-silicon tandem cells, which are constructed using superlattices consisting of environmental friendly Si and its compounds. The well and barrier materials in superlattices are restricted to silicon and silicon oxide during the present study. Single crystalline Si/SiO2 quantum wells (QWs) have been fabricated by thermal oxidation of silicon-on-insulator (SOI) wafers. It is found that oxide properties in QWs are important for SOI wafers prepared by the SIMOX (Separation by Implantation of Oxygen) technique. However, QWs fabricated from SOI wafers prepared by the ELTRAN (Epitaxial Layer TRANsfer) approach show the effect of quantum confinement without evidence of strong oxide interfacial transitions. In these wafers, evidence for an apparently ordered silicon oxide was found with 1.92?atomic fringe spacing along the (110) direction of the Si structure and with the thickness about 17?along the (100) direction of the Si structure. Luminescence wavelength ranges are from 700nm to 918nm depending on the Si thickness. The luminescence measurements on other positions of the sample show peak and shoulder spectra, which are explained by monolayer fluctuations in QW thicknesses, previously observed in III-V QWs and II-VI QWs. Si/SiO2 superlattices are fabricated by RF magnetron sputtering. Si density is the key issue in crystallizing the superlattice. High-density Si layers crystallize either under high temperature furnace annealing or rapid thermal process annealing. However, low density Si would not crystallize even at high temperature. Crystallized nanocrystals in the Si layers are observed by high resolution transmission electron microscopy (HRTEM) when the Si layer is thicker than 3nm. When Si layers are thinner than 3nm, the Si layers are discontinuous and finally deteriorate into small nanocrystals. The suitability of such superlattices for surface passivation and antireflection coatings is reviewed. Initial attempts to fabricate heterojunctions between Si wafers and Si/SiO2 superlattices resulted in open circuit voltage of 252mV. However, it is expected that better results would be obtained if Si/SiO2 superlattices were fully crystallized.
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Corbin, Elizabeth Ann. "Infra-red optical properties of SiGe/Si heterostructures". Thesis, University of Newcastle Upon Tyne, 1995. http://hdl.handle.net/10443/810.

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We present full-scale relativistic pseudopotential calculations of the first-order susceptibility in p-type SiGe/Si multiple quantum well structures with a view to exploring the suitability of such systems for infrared applications in the 3-5yrn and 8-15itm ranges. A derivation of an expression for the linear susceptibility, or absorption, is given and the frequency dependence of the linear response due to transitions between the valence minibands is determined. The microscopic origin of the absorption is demonstrated for both parallel and normal incident light. Comparisons between calculated and experimental results are presented and shown to be in good agreement. The effects of changing well width, temperature, doping concentration and germanium concentration in the well are considered. We also consider Auger recombination and discuss the possibility of engineering the miniband structure in order to prevent certain Auger processes occuring, Preliminary results from full scale Auger calculations are also presented.
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Shin, Dong Hoon. "Magnetotransport phenomena in modulation doped N-channel Si/ Si[subscript 0.7]Ge[subscript 0.3] quantum well structures". Thesis, University College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.393626.

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Liang, Hu. "Fabrication of high power InGaN/GaN multiple quantum well blue LEDs grown on patterned Si substrates /". View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20LIANG.

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Weiss, Bernard Lawson. "Modelling and characterisation III-V semiconductor quantum well structures and Si based structures for optoelectronic applications". Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267875.

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Gadir, Mazin A. "Theoretical studies of GaAs / AlGaAs and SiGe / Si mid- and far-infrared (Terahertz) quantum well infrared photodetectors". Thesis, University of Leeds, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417888.

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Aslan, Bulent. "Physics And Technology Of The Infrared Detection Systems Based On Heterojunctions". Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12604801/index.pdf.

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The physics and technology of the heterojunction infrared photodetectors having different material systems have been studied extensively. Devices used in this study have been characterized by using mainly optical methods, and electrical measurements have been used as an auxiliary method. The theory of internal photoemission in semiconductor heterojunctions has been investigated and the existing model has been extended by incorporating the effects of the difference in the effective masses in the active region and the substrate, nonspherical-nonparabolic bands, and the energy loss per collisions. The barrier heights (correspondingly the cut-off wavelengths) of SiGe/Si samples have been found from their internal photoemission spectrums by using the complete model which has the wavelength and doping concentration dependent free carrier absorption parameters. A qualitative model describing the mechanisms of photocurrent generation in SiGe/Si HIP devices has been presented. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. Properties of internal photoemission in a PtSi/Si Schottky type infrared detector have also been studied. InGaAs/InP quantum well photodetectors that covers both near and mid-infrared spectral regions by means of interband and intersubband transitions have been studied. To understand the high responsivity values observed at high biases, the gain and avalanche multiplication processes have been investigated. Finally, the results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors have been presented. A simple physical picture has also been discussed to account for the main observed features.
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Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection". Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.

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In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.
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Książki na temat "Si quantum well"

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Theoretical Modeling of Linear Absorption Coefficients in Si/Si1-xGex Multiple Quantum Well Photodetectors. Storming Media, 1996.

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Narlikar, A. V., i Y. Y. Fu, red. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

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This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
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Części książek na temat "Si quantum well"

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Wang, Kang L., Chanho Lee i S. K. Chun. "Intersubband Absorption in N - type Si and Ge Quantum Wells". W Quantum Well Intersubband Transition Physics and Devices, 221–35. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_18.

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Corbin, E., M. J. Shaw, K. B. Wong i M. Jaros. "Second Harmonic Generation in GaAs-AlAs and Si-SiGe Quantum Well Structures". W Quantum Well Intersubband Transition Physics and Devices, 477–91. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_41.

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Karunasiri, R. P. G. "Intersubband Transitions in P-Type SiGe/Si Quantum Wells for Normal Incidence Infrared Detection". W Quantum Well Intersubband Transition Physics and Devices, 237–50. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_19.

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Antonova, I. V., L. L. Golik, M. S. Kagan, V. I. Polyakov, A. I. Rukavischnikov, N. M. Rossukanyi i J. Kolodzey. "Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures". W Solid State Phenomena, 489–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.489.

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Andrievskii, V. V., I. B. Berkutov, T. Hackbarth, Yu F. Komnik, O. A. Mironov, M. Myronov, V. I. Litvinov i T. E. Whall. "Quantum Interference and Spin-Splitting Effects in Si 1−X Ge X p-Type Quantum Well". W Molecular Nanowires and Other Quantum Objects, 319–28. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2093-3_29.

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Kirchmann, Patrick S., i Uwe Bovensiepen. "Ultrafast Electron Dynamics in Quantum Well States of Pb/Si(111) Investigated by Two-Photon Photoemission". W Springer Series in Chemical Physics, 690–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-95946-5_224.

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Mahala, Pramila, Amit K. Goyal, Sumitra Singh i Suchandan Pal. "Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer". W Lecture Notes in Electrical Engineering, 565–71. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2553-3_55.

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Truitt, J. L., K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, J. O. Chu i in. "Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence". W Topics in Applied Physics, 101–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-79365-6_6.

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Ismail, K. "Si/SiGe Quantum Wells: Transport Properties and Possible Devices". W Low-Dimensional Electronic Systems, 333–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84857-5_33.

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Woodbridge, K. "MBE Growth of GaAs and III–V Quantum Wells on Si". W Heterostructures on Silicon: One Step Further with Silicon, 1–6. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0913-7_1.

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Streszczenia konferencji na temat "Si quantum well"

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Ghamaty, S., i N. B. Elsner. "Quantum Well Thermoelectric Devices". W ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73173.

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Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type B4C/B9C and N-type Si/SiGe films. Si/SiC is being developed to replace Si/SiGe for higher temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved 700 hours at TH of 300°C and TC of 50°C with no degradation. Emphasis is now shifting towards couple and module design and fabrication. Preliminary design calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs.
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Fill, M., M. Rahim, A. Khiar, F. Felder i H. Zogg. "PbSe quantum well VECSEL on Si". W 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942574.

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Wang, Kang L., i R. P. G. Karunasiri. "Si-based quantum-well intersubband detectors". W San Diego '92, redaktor Wagih H. Makky. SPIE, 1992. http://dx.doi.org/10.1117/12.138622.

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Fill, M., A. Khiar, M. Rahim, F. Felder, H. Zogg, Giti A. Khodaparast, Michael B. Santos i Christopher J. Stanton. "PbSe Quantum Well VECSEL on Si". W 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15). AIP, 2011. http://dx.doi.org/10.1063/1.3671710.

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Bulusu, A., i D. G. Walker. "Coupled Quantum-Scattering Madeling of Thermoelectric Properties of Si/Ge/Si Quantum Well Structures". W ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-15274.

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Confined structures presumably offer enhanced performance of thermoelectric devices. 1) Interfaces and boundaries create scattering sites for phonons, which reduces the thermal conductivity. 2) Reduced dimensionality increases the local density of states near the Fermi level, which increases the Seebeck coefficient. From these two phenomena, the net effect should be an increase in ZT, the performance parameter used to evaluate different materials and structures. These effects have been measured and modeled, but none of the models attempts to quantify the electron-phonon coupled effects particularly in the regime where quantum and scattering influences are found. Using the non-equilibrium Green's function (NEGF) approach, quantum wells composed of Si and Ge are studied and the important physics isolated. Results show a competing effect between the decrease in the electrical conductivity due to scattering with the increase in electrical conductivity with doping, leading to 77% decrease in the value of the power factor for the case of electron-optical phonon scattering.
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Nayak, D. K., J. C. S. Woo, J. S. Park, K. L. Wang i K. P. MacWilliams. "Hole Confinement in a Si/GeSi/Si Quantum Well on SIMOX". W 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.s-i-9-3.

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Sun, P. H., W. C. Wang i S. T. Chang. "A SiGe/Si multiple quantum well avalanche photodetector". W 2009 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378217.

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Terashima, Koichi, Michio Tajima, Taeko Niino i Toru Tatsumi. "Photoluminescence of Si1-xGex/Si Quantum Well Structures". W 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.pb4-1.

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Li, Cheng, Qingqing Yang, Hongjie Wang, Jialian Zhu, Liping Luo, Jinzhong Yu i Qiming Wang. "SiGe/Si quantum well resonant-cavity-enhanced photodetector". W International Symposium on Optical Science and Technology, redaktorzy R. Jennifer Hwu i Ke Wu. SPIE, 2000. http://dx.doi.org/10.1117/12.422129.

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Krommenhoek, Daniel, Norbert Elsner, Saeid Ghamaty i Velimir Jovanovic. "Performance of Nanoscale Quantum Well Thermoelectrics". W ASME 2007 2nd Energy Nanotechnology International Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/enic2007-45009.

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Alternating 10 nm thermoelectric films of N-type Si/SiGe and P-type Si/SiGe and B4C/B9C have been fabricated on various substrates, electrically joined and thermoelectric properties measured from 40°K up to 700°K. These nanoscale thermoelectric films demonstrate excellent thermoelectric power factors significantly higher than current bulk thermoelectric materials. The implications of the measured thermoelectric Seebeck coefficient data and electrical resistivity data for alternating 10 nm films that are grown to thicknesses of one to 10 microns means efficiencies of 15% at 200°C temperature differences and efficiencies of 30% at 400°C temperature differences. Utilizing Seebeck and resistivity data obtained by Hi-Z and UCSD, along with published bulk thermal conductivity data, which is conservative, unique thermoelectric module and generator concept designs for both power generation and cooling are presented over wide temperature and power ranges.
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Raporty organizacyjne na temat "Si quantum well"

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Shi, Xiaoyan, Tzu-Ming Lu, Wei Pan, S. H. Huang, C. W. Liu i J. Y. Li. Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well. Office of Scientific and Technical Information (OSTI), styczeń 2015. http://dx.doi.org/10.2172/1177371.

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Pan, Wei, Tzu-Ming Lu, J. S. Xia, N. S. Sullivan, S. H. Huang, Y. Chuang, J. Y. Li, C. W. Liu i D. C. Tsui. National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells. Office of Scientific and Technical Information (OSTI), grudzień 2016. http://dx.doi.org/10.2172/1505355.

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