Gotowe bibliografie tematyczne / Si (111) Substrates

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Gotowa bibliografia na temat „Si (111) Substrates”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Si (111) Substrates"

Severino, Andrea, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L. M. S. Perdicaro, Giuseppe Condorelli, Marco Mauceri i Francesco La Via. "Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si". Materials Science Forum 615-617 (marzec 2009): 149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.149.

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The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

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Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang i Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications". Beilstein Journal of Nanotechnology 8 (15.09.2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

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Koryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov i Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates". Materials 15, nr 18 (6.09.2022): 6202. http://dx.doi.org/10.3390/ma15186202.

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In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.

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Ferro, Gabriel, Taguhi Yeghoyan, François Cauwet, Stéphane Coindeau, Thierry Encinas i Véronique Soulière. "3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations". Materials Science Forum 1062 (31.05.2022): 23–27. http://dx.doi.org/10.4028/p-aaf11g.

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This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of orientations, i.e. (100) on axis and 2°off, (111), (110), (211), (311), (331), (510), (553) and (995). All the 3C-SiC layers were grown using the same two-step CVD process with a growth rate of 2 μm/h. According to X-ray diffraction characterizations, direct heteroepitaxy (layer having exactly the same orientation as the substrate) was successful on most of the Si substrates except for (110) one which was the only orientation leading to obvious polycrystalline deposit. Each layer led to a specific surface morphology, the smoothest being the ones grown on Si (100)2°off, and (995) substrates. None of these layers cracked upon cooling though those grown on Si (111), (211) and (553) substrates were highly bowed.

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Sadoh, Taizoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama i Masanobu Miyao. "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator". Key Engineering Materials 470 (luty 2011): 8–13. http://dx.doi.org/10.4028/www.scientific.net/kem.470.8.

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We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

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Zhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak i Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.

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Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

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Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki i Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations". Materials Science Forum 600-603 (wrzesień 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

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Handa, Hiroyuki, Shun Ito, Hirokazu Fukidome i Maki Suemitsu. "Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates". Materials Science Forum 711 (styczeń 2012): 242–45. http://dx.doi.org/10.4028/www.scientific.net/msf.711.242.

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By conducting a heteroepitaxy of a 3C-SiC film on a Si substrate and by annealing its surface in a UHV ambient, epitaxial graphene can be formed on such 3C-SiC virtual substrates. While the growth on the Si-terminated 3C-SiC(111)/Si (111) surface is known to proceed in a similar manner as on the Si-terminated 6H-SiC(0001) surface, successful growth of graphene on 3C-SiC(100)/Si (100) and 3C-SiC(110)/Si (110) surfaces remains puzzling. We have carried out detailed cross-sectional transmission-electron-microscopy observations on these systems to find out that (111)-facets may play crucial roles in the initiation of graphene on these surfaces. This observation also accounts for the absence of the interface layer at the graphene/SiC in these orientations.

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Lee, Dong Nyung. "Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates". Advanced Materials Research 26-28 (październik 2007): 623–28. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.623.

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Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.

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Go, Hyun Young, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, M. Tanaka i Kazuo Shinozaki. "Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates". Key Engineering Materials 421-422 (grudzień 2009): 111–14. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.111.

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We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

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Rozprawy doktorskie na temat "Si (111) Substrates"

Nguyen, Van H. "Epitaxial growth of relaxed Ge buffers on (111) and (110) Si substrates using RP-CVD". Thesis, University of Warwick, 2012. http://wrap.warwick.ac.uk/50222/.

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The continued scaling of Si metal oxide semiconductor field effect transistor (MOSFET) devices to enhance performance is reaching its fundamental limits and the need for new device architecture and/or new materials is driving research and development within the semiconductor industry. Germanium, with its much higher intrinsic carrier mobilities, has a considerable advantage over Si as a channel material and its compatibility with current complementary metal oxide semiconductor (CMOS) technology makes it a very promising candidate. There is currently significant technological interest in the epitaxial growth of high quality relaxed Ge layers directly on Si substrates for potential applications including: high-mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs), infrared photodetectors, solar cells and III-V integration. The crystallographic orientation of the substrate also influences the inversion layer mobility in transistors; compared to (100) orientation, Ge grown on (111) and (110) substrates can considerably enhance the carrier mobilities for electrons and holes. The 4.2% mismatch between Ge and Si is, however, a major drawback for the growth of high quality epitaxial layers, as 3-dimensional islanding, surface roughening and the generation of a high density of defects can occur which are all detrimental to performance of prospective devices. In particular, epitaxial growth on (110) and (111) surfaces is more susceptible to the formation of extended stacking faults as the gliding sequence of the dissociated 30° and 90° partial dislocations is reversed with respect to that for the (100) surface. This means that the concept of a thick graded buffer for gradual strain relaxation is not as easily applicable in the case of (111) and (110) substrates. In this work, we have investigated the growth of relaxed Ge films on (111) and (110) Si substrates by reduced-pressure chemical vapour deposition (RP-CVD) in an ASM Epsilon 2000 reactor using the high temperature/ low temperature growth technique, which comprises of a thin low temperature (LT) Ge seed, a thick high temperature (HT) Ge layer and subsequent in-situ high temperature H2 anneal. We will show how the growth conditions influence both the presence and nature of defects within the Ge layers, their surface morphology and also the state of relaxation using transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. Formation of islands in the 10 nm Ge seed layer has led to a significant enhancement in the quality of the buffer by providing a effective way to relax the layers, reducing the densities of stacking faults and threading dislocations by at least a decade compared to previous studies and also producing a smooth surface around 2 nm rms.

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Hortamani, Mahboubeh. "Theory of adsorption, diffusion and spinpolarization of Mn on Si(001) and Si(111) substrates". [S.l.] : [s.n.], 2006. http://www.diss.fu-berlin.de/2006/588/index.html.

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Wang, Yong. "Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD /". View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20WANGY.

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Curcella, Alberto. "Looking for silicene: studies of silicon deposition on metallic and semiconductor substrates". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9314/.

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Nel presente lavoro espongo i risultati degli esperimenti svolti durante la mia internship all’Institut des NanoSciences de Paris (INSP), presso l’Università Pierre et Marie Curie (Paris VI), nel team "Phisico-Chimie et Dynamique des Surfaces", sotto la supervisione del Dott. Geoffroy Prévot. L’elaborato è stato redatto e in- tegrato sotto la guida del Dott. Pasquini, del dipartimento di Fisica e Astronomia dell’Università di Bologna. La tesi s’inserisce nel campo di ricerca del silicene, i.e. l’allotropo bidimensionale del silicio. Il cosidetto free-standing silicene è stato predetto teoricamente nel 2009 utilizzando calcoli di Density Functional Theory, e da allora ha stimolato un’intensa ricerca per la sua realizzazione sperimentale. La sua struttura elettronica lo rende particolarmente adatto per eventuali appli- cazioni tecnologiche e sperimentali, mentre lo studio delle sue proprietà è di grande interesse per la scienza di base. Nel capitolo 1 presento innanzitutto la struttura del silicene e le proprietà previste dagli studi pubblicati nella letteratura scientifica. In seguito espongo alcuni dei risultati sperimentali ottenuti negli ultimi anni, in quanto utili per un paragone con i risultati ottenuti durante l’internship. Nel capitolo 2 presento le tecniche sperimentali che ho utilizzato per effettuare le misure. Molto tempo è stato investito per ottenere una certa dimistichezza con gli apparati in modo da svolgere gli esperimenti in maniera autonoma. Il capitolo 3 è dedicato alla discussione e analisi dei risultati delle misure, che sono presentati in relazione ad alcune considerazioni esposte nel primo capitolo. Infine le conclusioni riassumono brevemente quanto ottenuto dall’analisi dati. A partire da queste considerazioni propongo alcuni esperimenti che potrebbero ulteriormente contribuire alla ricerca del silicene. I risultati ottenuti su Ag(111) sono contenuti in un articolo accettato da Physical Review B.

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Rouissi, Zied [Verfasser], Dieter [Akademischer Betreuer] Schmeißer, Ehrenfried [Akademischer Betreuer] Zschech i Christian [Akademischer Betreuer] Pettenkofer. "Role of substrates morphology and chemistry in ALD HfO₂ on Si(111)-H terminated surfaces as model / Zied Rouissi ; Dieter Schmeißer, Ehrenfried Zschech, Christian Pettenkofer". Cottbus : BTU Cottbus - Senftenberg, 2017. http://d-nb.info/1136904441/34.

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Destefanis, Vincent. "Dépôt et gravure en phase vapeur d'hétérostructures Si/SiGe sur substrats (100), (110) et (111)". Grenoble INPG, 2009. http://www.theses.fr/2009INPG0079.

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Le dépôt CVD de Si/SiGe et leur gravure sélective par HCl ont été étudiés sur substrats Si(100), (110) et (111). L’épitaxie de Si/SiGe a démontré de plus faibles vitesses de croissance du SiGe(110) ainsi que de plus faibles %Ge(110). L’intégration de couches (110) sur des substrats avec motifs a mené à la fabrication de dispositifs SOI Localisé (110) avec de forts gains de mobilités de trous. La croissance de substrats virtuels épais de SiGe a mené à des densités de défauts élevées sur (110) et (111). Les fortes valeurs de contraintes de couches de Si(110) contraintes en tension semblent toutefois prometteuses. L’épitaxie locale de Ge(110) relaxé dans des motifs a mis en évidence des défauts normaux à la surface (110). La gravure sélective HCl du SiGe par rapport au Si, étudiée à hautes pressions, a amélioré les vitesses et sélectivités de gravure sur (100). Ces résultats de gravure obtenus sur (100) contrastent avec les sélectivités de gravure médiocres mises en évidence sur (110)
CVD deposition of Si/SiGe on (100), (110) and (111) substrates and their selective chemical vapour etch using HClhave been studied. The epitaxy of Si/SiGe has notably highlighted lower SiGe(110) growth rates and Ge(110) contents than on (100). Integration of (110) epitaxiallayers on patterned Si substrates has led to (110) Localized Silicon On Insulator devices with impressive hole mobility gains. Growth of thick, fully-relaxed SiGe virtual substrates has noticeably shown a high defectivity on (110) and (111). The high levels of strain obtained in (110) tensily strained Si layers seem however promising. The selective epitaxial growth of relaxed Ge(110) layers in narrow patterns has exhibited defects normal to the (110) surface and poor defect trapping. The HCI lateral selective etching of SiGe versus Si at high HCI pressure has improved (100) etch rates and selectivities. These technologically relevant (100) etching results contrast with the poor (110) etching selectivities obtained

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Xu, Zhongjie, i 徐忠杰. "Molecular beam epitaxial growth of GaN on Si(111) substrate". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45866338.

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Tanaka, Shigeyasu, Yoshio Honda i Nobuhiko Sawaki. "Structural characterization of GaN laterally overgrown on a (111)Si substrate". American Institute of Physics, 2001. http://hdl.handle.net/2237/6985.

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Albertini, David. "Etude par microscopie à effet tunnel du système SiH4-Si(111)7x7". Aix-Marseille 2, 1998. http://www.theses.fr/1998AIX22097.

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La chimisorption et la croissance a la surface de materiaux sont des etapes initiales preponderantes dans de nombreux procedes industriels. Au cours de ma these, j'ai etudie par depot chimique en phase gazeuse (c. V. D. ) la croissance homoepitaxique sur la surface si(111)77 a partir d'un gaz de silane (sih#4). Mon etude a ete realisee a l'aide d'un microscope a effet tunnel (s. T. M. ). C'est une technique particulierement bien adaptee pour ce type de travaux. En effet, elle nous permet de visualiser dans l'espace direct la chimisorption a l'echelle atomique, d'identifier les sites reactifs et enfin de caracteriser sur de plus grandes echelles la croissance des films deposes. Des resultats originaux sur la chimisorption du silane a la surface si(111)77 ont ete obtenus : _ l'etude par microscopie a effet tunnel nous a permis d'identifier sans ambiguite les sites d'adsorption du silane a temperature ambiante. Le couple restatome-adatome dissocie la molecule de silane et conduit a la formation de deux especes sih#2 doublement lies au substrat. De plus, nous avons pu mettre en evidence par spectroscopie tunnel la presence de l'espece sih en surface. _ dans la gamme de temperature 673-823k, nous avons mis en evidence que le silicium est bloque dans sa diffusion par l'hydrogene present en surface. Ceci cree de petits amas hydrogenes. En considerant que l'hydrogene desorbe a partir de ces pieges, nous avons pu modeliser la cinetique de desorption qui est alors du premier ordre. _ les phenomenes de nucleation constituent la derniere partie de ma these. Nous obtenons des resultats originaux qui ne peuvent etre interpretes par les theories classiques de nucleation que si on considere la variation du recouvrement en hydrogene en fonction de la temperature et/ou de la pression. A partir de nos resultats et d'etudes recentes publiees dans la litterature, nous pouvons affirmer, en depit de cette interpretation, que la deconstruction de la 77, et non la diffusion, est le facteur limitant la croissance.

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Guirleo, Guillaume. "Etude des propriétés électriques et optiques d'hétérostructures Si/CaF2 déposées sur des substrats de Si(111)". Phd thesis, Aix-Marseille 2, 2002. http://www.theses.fr/2002AIX22059.

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Książki na temat "Si (111) Substrates"

Gariglio, S., M. S. Scheurer, J. Schmalian, A. M. R. V. L. Monteiro, S. Goswami i A. D. Caviglia. Surface and Interface Superconductivity. Redaktor A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.7.

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This article focuses on surface and interface superconductivity, a pivotal area of mesoscopic superconductivity. It discusses theoretical ideas regarding superconductivity in the 2D limit; pairing symmetry in systems with broken inversion symmetry and in the presence of Rashba spin–orbit interaction; and coupling of substrate phonon modes to layer electronic states to induce or enhance the superconducting condensate. It also reviews the experimental ongoing efforts to fabricate, characterize, and measure these systems, with particular emphasis on oxide materials. Superconductivity in two dimensions, in ultra-thin metals on Si(111), and at the LaAlO3/SrTiO3 interface is examined. The article concludes with an analysis of theoretical propositions aimed at realizing and testing novel superconducting states occurring at the surfaces and interfaces.

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Części książek na temat "Si (111) Substrates"

Maissen, C., A. Sultan, S. Teodoropol i H. Zogg. "Thermal Mismatch Strain Relaxation of Epitaxial IV-VI Layers on Si(111) Substrates at Cryogenic Temperatures". W Monitoring of Gaseous Pollutants by Tunable Diode Lasers, 148. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_25.

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Ito, Mikinori, Kazuaki Sawada i Makoto Ishida. "High Quality Epitaxial Pt Films Grown on γ-Al₂O₃/Si (111) Substrates". W Solid State Phenomena, 181–84. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.181.

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Guyot-Sionnest, P., P. Dumas, Y. J. Chabal i G. S. Higashi. "Lifetime of an Adsorbate Substrate Vibration: H on Si(111)". W Springer Series in Chemical Physics, 374–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84269-6_114.

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Nishiguchi, Taro, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima i Shigehiro Nishino. "Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate". W Materials Science Forum, 193–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.193.

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Nakamura, Mitsutaka, Toshiyuki Isshiki, Taro Nishiguchi, Koji Nishio, Satoru Ohshima i Shigehiro Nishino. "Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate". W Materials Science Forum, 181–84. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.181.

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Ueno, K., K. Saiki i A. Koma. "Fabrication of compound-semiconductor quantum dots on a Si(111) substrate terminated by bilayer-GaSe". W Springer Proceedings in Physics, 385–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_178.

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Rao, B. V., D. Gruznev, T. Tambo i C. Tatsuyama. "Formation of first InSb molecular layer on Si(111) substrate: Role of In(4×1) reconstruction". W Springer Proceedings in Physics, 323–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_148.

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Yao, Zhaohui, Tingjin Chen, Chaofeng Xia, Hairong Yuan, Jingtian Li, Hua Liao i Zuming Liu. "Influence of Substrate Temperature and Vacuum Annealing on the Structural Properties of CDTE(111)/Si(100) Thin Films". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1089–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_213.

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Isshiki, Toshiyuki, Mitsutaka Nakamura, Taro Nishiguchi, Koji Nishio, Satoru Ohshima i Shigehiro Nishino. "Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method". W Materials Science Forum, 185–88. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.185.

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Song, Jae Chul, D. H. Kang, Seon Ho Lee, Eun Su Jang, Dong Wook Kim, Kannappan Santhakumar i Cheul Ro Lee. "Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD". W Semiconductor Photonics: Nano-Structured Materials and Devices, 108–10. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.108.

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Streszczenia konferencji na temat "Si (111) Substrates"

Bairamis, A. I., A. Adikimenakis, A. O. Aijagunna, Th Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, Ph Komninou, Ch Zervos, J. Kuzmik i A. Georgakilas. "Different polarities of InN (0001) heterostructures on Si (111) substrates". W 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998663.

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Zolotukhin, Dmitry, Dmitry Goloshchapov, Pavel Seredin, Andrey Mizerov i Alexander Lenshin. "STUDY OF THE INFLUENCE OF THE SIC / POR-SI BUFFER LAYER ON THE STRUCTURAL, OPTICAL, AND TRANSPORT PROPERTIES OF GAN / SIC / SI (111) HETEROSTRUCTURES". W International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1576.silicon-2020/123-126.

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Streszczenie:

In this work, we demonstrate a new approach to the formation of GaN layers on Si (111) substrates using a transition nanoporous Si (111) (por-Si) sublayer, which was subsequently modified using the adatom substitution technique in order to form a 3H-buffer layer. SiC.

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Pau, Jose L., Elias Munoz Merino, Miguel A. Sanchez-Garcia i Enrico Calleja. "Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates". W Symposium on Integrated Optoelectronic Devices, redaktorzy Gail J. Brown i Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467653.

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Wosko, Mateusz, Bogdan Paszkiewicz, Tomasz Szymanski i Regina Paszkiewicz. "Different buffer approaches for AlGaN/GaN heterostructures epitaxy on Si(111) substrates". W 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998651.

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Barucca, G., Guiseppe Majni, Paolo Mengucci, Gilberto Leggieri, Armando Luches, Maurizio Martino i Alessio Perrone. "Carbon nitride coherently grown on Si (111) substrates by pulsed laser irradiation". W ALT'99 International Conference: Advanced Laser Technologies, redaktorzy Vladimir I. Pustovoy i Vitali I. Konov. SPIE, 2000. http://dx.doi.org/10.1117/12.378165.

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Fleming, James G. "Combining the best of bulk and surface micromachining using Si (111) substrates". W Micromachining and Microfabrication, redaktor James H. Smith. SPIE, 1998. http://dx.doi.org/10.1117/12.324294.

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Tawara, T., T. Hozumi, H. Omi, R. Kaji, S. Adachi, H. Gotoh i T. Sogawa. "Energy transfer in epitaxial Er2O3 thin films grown on Si(111) substrates". W 2013 IEEE Photonics Conference (IPC). IEEE, 2013. http://dx.doi.org/10.1109/ipcon.2013.6656416.

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Akasaka, Tetsuya, Yasuyuki Kobayashi i Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers". W 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.

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Akimoto, K., J. Mizuki, I. Hirosawa, T. Tatsumi, H. Hirayama, N. Aizaki i J. Matsui. "Interfacial Super Structure between Epitaxial Si(111) Layers and B(√3 x √3)/Si(111) Substrates Studied by Synchrotron X-Ray Diffraction". W 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-iii-2.

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Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers i in. "GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE". W SPIE OPTO: Integrated Optoelectronic Devices, redaktorzy Klaus P. Streubel, Heonsu Jeon i Li-Wei Tu. SPIE, 2009. http://dx.doi.org/10.1117/12.814919.

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