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Gotowe bibliografie tematyczne / Si (111) Heterojunction

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Gotowa bibliografia na temat „Si (111) Heterojunction”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Si (111) Heterojunction"

1

Chao, Xiong, Chen Lei, and Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction." Open Materials Science Journal 7, no. 1 (2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.

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The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The fo

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Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination.

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3

He, Xiao-Min, Zhi-Ming Chen, Lei Huang, and Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction." Modern Physics Letters B 29, no. 29 (2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.

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Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher a

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Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/

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5

Xu, Bei, Changjun Zhu, Xiaomin He, et al. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction inte

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6

Xiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu, and Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode." Key Engineering Materials 538 (January 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.

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The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV,

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7

Mahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (1985): 1252. http://dx.doi.org/10.1116/1.583050.

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González, M. L., F. Soria, and M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (1990): 1977–82. http://dx.doi.org/10.1116/1.576791.

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9

Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, et al. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattic

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10

Abdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim, and Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis." Tikrit Journal of Pure Science 21, no. 7 (2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.

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In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn(CH3COO)22H2O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2M) at (350 Co), and studying The electrical properties of ZnO/p-Si heterojunction. (I-V) characteristic in dark and illumination, (C-V) characteristic and The built- in potential (Vbi) is calculated, while from I-V measurements, the ideality factor (β), the Rectification Factor(F) and (Iphoto/Idark) ratio are calculated.

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