Artykuły w czasopismach na temat „Semiconductor”
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Xiang, Wenlong. "Semiconductor Culture in the Global Economy". Lecture Notes in Education Psychology and Public Media 25, nr 1 (28.11.2023): 7–11. http://dx.doi.org/10.54254/2753-7048/25/20230188.
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The use of technology in multiple industries has contributed to the growth of the global economy. As a core part of todays technology, the impact derived from semiconductors is two-sided. While the general public is focused on the advantages of semiconductors, the political-cultural-national tensions it creates are missing. Semiconductor culture is a combination of technology and politics in the context of economic development. The historical semiconductor battles between countries and the current semiconductor battles confirm this view. This paper reviews the Japan-US semiconductor war in the last century, the Japan-South Korea semiconductor war in this century, and the US-China semiconductor war in the last few years. This paper aims to use the semiconductor cases to demonstrate the adverse effects of semiconductor culture in the global economy. Finally, it concludes that semiconductor culture can strain political relations between nations.
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Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo i Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics". Polymers 12, nr 1 (19.12.2019): 9. http://dx.doi.org/10.3390/polym12010009.
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Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) and the zinc hexadecafluoro-phthalocyanine (F16ZnPc) as n-type molecular semiconductors with the p-type molecular semiconductor dibenzotetrathiafulvalene (DBTTF). Consequently, the π-conjugated semiconductors particles were embedded in a Nylon-11 matrix and characterized, both structurally and considering their optical and electrical properties. Thin films of these materials were manufactured in order to comparatively study the membranes and precursor semiconductor particles. The membranes presented bandgap (Eg) values that were lower than those obtained in the films, which is an indicator of an improvement in their semiconductor capacity. Finally, the membranes were subjected to accelerated lighting conditions, to determine the stability of the polymer and the operating capacity of the membrane. After fatigue conditions, the electrical behavior of the proposed semiconductor membranes remained practically unaltered; therefore, they could have potential applications in molecular electronics. The chemical stability of membranes, which did not degrade in their polymer compound, nor in the semiconductor, was monitored by IR spectroscopy.
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Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor". Applied and Computational Engineering 7, nr 1 (21.07.2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.
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Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.
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Kumar, Anoop. "PRESENT STATUS OF SEMICONDUCTOR INDUSTRY IN INDIA and IT’S FUTURE PROSPECTS". SCHOLARLY RESEARCH JOURNAL FOR INTERDISCIPLINARY STUDIES 9, nr 68 (31.10.2021): 16095–100. http://dx.doi.org/10.21922/srjis.v9i68.10004.
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Semiconductor is now an inseparable part of almost all sectors. Nowadays semiconductors or chips / integrated circuits (ICs) are the lifeblood of all digital Products. Industry estimates are that India’s demand for semi - conductor goods will reach US $ 400 billion by FY 2025. Taiwan’s TSMC and South Korea’s Samsung manufacture as much as 70% of the world’s semiconductors. America only makes about 10% of the chips it uses. According to Global data, the semiconductor industry is facing an unprecedentad supply shortage since the end of the year 2019 due to unprecedented demand growth. The government’s plan to promote Semiconductor manufacturing may have a bright future for Indian semiconductor Industry. The government will seek to incentivise startups to design and make semiconductors. India imported $ 3.14 bn in semiconductor Devices in 2019. Semiconductor world market has to grow by $ 90.80 bn during 2020 - 2024. India can take it’s pie in this opportunity. India has to develop an ecosystem. Capital expenditure is required to expand production to address the rising chip demand. Setting up a new foundry can cost anywhere around $ 15 bn - $ 20 bn. Amid challenges Technology influx such as artificial intelligence, 5G wireless, IOT and cloud computing will remain key factors for rampant growth of semiconductors Industry in India.
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Hockett, R. S. "Txrf Semiconductor Applications". Advances in X-ray Analysis 37 (1993): 565–75. http://dx.doi.org/10.1154/s0376030800016116.
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This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for semiconductors. This review is limited to surface analysis of contamination for semiconductors and does not include chemical analysis in semiconductor processing. TXRF for surface analysis is a relatively new technology. One of the first publications occurred in 1986 using synchrotron radiation. Publications using commercially available TXRF instruments for semiconductor applications began in 1988. Today there are on the order of 100 TXRF instruments worldwide in the semiconductor industry. Since 1988 there have been about 100 publications in this field, but this number does not include numerous abstracts and publications in Japan where the majority of the commercial instruments are found today. The commercial instruments were developed for the primary application of characterizing the cleaning of planar silicon wafers, however, numerous unforeseen applications were developed by users and many of those applications are reported here. In essence TXRF has much broader application today in the semiconductor industry than supporting the cleaning of silicon wafers.
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Wu, Jianhao. "Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI". Applied and Computational Engineering 39, nr 1 (21.02.2024): 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.
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Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the candidate materials for new semiconductor materials due to their many advantages, and their many characteristic parameters are even better than those of silicon semiconductors of the same size. This article introduces the research status, performance characteristics, and comparison of silicon-based and carbon-based integrated circuits, as well as the current application scenarios of silicon-based and carbon-based integrated circuits in the industry, and the many problems encountered. Finally, this article analyses the future development direction of the integrated circuit industry and the possible challenges it may face.
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WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, nr 04 (grudzień 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
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Yang, Jin-Peng, Hai-Tao Chen i Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, nr 24 (28.06.2022): 245501. http://dx.doi.org/10.1063/5.0096697.
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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
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Sandoval-Plata, Emilio Iván, Ricardo Ballinas-Indili, Cecilio Álvarez-Toledano i María Elena Sánchez-Vergara. "Dopaje de semiconductor orgánico basado en ftalocianina de silicio". Pädi Boletín Científico de Ciencias Básicas e Ingenierías del ICBI 11, Especial4 (30.11.2023): 55–61. http://dx.doi.org/10.29057/icbi.v11iespecial4.11368.
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Tradicionalmente, los compuestos orgánicos han sido considerados aislantes eléctricos. Sin embargo, el estudio de los semiconductores orgánicos ha llevado al desarrollo de alternativas al silicio semiconductor, basadas en moléculas π-conjugadas tales como las ftalocianinas. En el presente estudio, se llevó a cabo un dopaje químico sobre el dicloruro de ftalocianina de silicio (SiPcCl2), con un ácido dieninoico con sustituyente bromuro, Br-1 (BrDAc). El semiconductor orgánico dopado fue sublimado al alto vacío y depositado sobre diferentes sustratos, para llevar a cabo una caracterización estructural, óptica, y eléctrica como película delgada. Para la caracterización estructural se realizó espectroscopía infrarroja, y se evaluaron parámetros ópticos como la transmitancia y absorbancia, obtenidos mediante espectroscopía ultravioleta-visible. A partir de estos resultados se determinaron por medio del modelo de Tauc, las brechas energéticas. Finalmente, se fabricaron dispositivos eléctricos simples: ITO/SiPcCl2-BrDAc/Ag que fueron caracterizados eléctricamente, para determinar el comportamiento cuando la película semiconductora SiPcCl2-BrDAc forma parte de un dispositivo simple.
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Khurana, Divyansh Anil, Nina Plankensteiner i Philippe M. Vereecken. "Reversible Redox Probes to Determine the Band Edge Locations for Nano-TiO2". ECS Meeting Abstracts MA2023-01, nr 30 (28.08.2023): 1803. http://dx.doi.org/10.1149/ma2023-01301803mtgabs.
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Semiconductor (photo-)electrocatalysts show immense promise in answering the difficulties faced in CO2 electrolysis in relation to the reduction product selectivity. We thus see materials like ZnO[1], Cu2-xSe[2], MoS2 [3], TiO2 [4] and their numerous composites being frequently investigated for their catalytic properties in CO2 (photo-)electroreduction. These catalysts are fabricated via varying techniques and can assume very different thicknesses and morphologies. Although the nano-semiconductors may behave differently, often only the bulk properties are considered when proposing possible reaction pathways. Determining band edge locations of semiconductors in solutions is one such case, where Mott-Schottky (MS) measurements are a widely accepted strategy. The measurement of the potential dependence of the capacitance of the semiconductor space-charge layer under depletion indeed forms an elegant method to determine the flat-band potential and hence the band edge positions for bulk semiconductors in solution. However, the MS method cannot be used for nano-structured semiconductor electrodes in the form of thin films, nanorods or nanoparticles coated on conducting substrates, as their nano-dimensions are typically much smaller than that of a semiconductor depletion layer. In this work, we explored an alternate strategy to determine band edge positions of nano-semiconductors using reversible redox probes. A model thin film system comprised of 30nm anatase TiO2 is used to demonstrate the feasibility of the strategy in aqueous electrolyte solutions. Fe, Ru and Cr based reversible redox species were used as electrochemical probes in cyclic voltammetry experiments with varying solution pH. Based on the presence/absence of the reversible behavior of these probes, we can deduce the TiO2 band edge locations. The procedure also allows us to draw parallels between semiconductor-metal and semiconductor-solution interfaces to gain new insights into the CO2 reduction mechanism on such semiconductor electrodes. Figure 1
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Lund, Mark W. "More than One Ever Wanted to Know about X-Ray Detectors Part VI: Alternate Semiconductors for Detectors". Microscopy Today 3, nr 5 (czerwiec 1995): 12–13. http://dx.doi.org/10.1017/s1551929500066116.
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X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconductors have been developed as x-ray detectors. In this article I will talk about narrow band gap semiconductors. Next time I will discuss large band gap semiconductors.
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Tajima, Hiroyuki, Takeshi Oda i Tomofumi Kadoya. "Nonthermal Equilibrium Process of Charge Carrier Extraction in Metal/Insulator/Organic Semiconductor/Metal (MIOM) Junction". Magnetochemistry 9, nr 7 (11.07.2023): 180. http://dx.doi.org/10.3390/magnetochemistry9070180.
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This paper presents the concept and experimental evidence for the nonthermal equilibrium (NTE) process of charge carrier extraction in metal/insulator/organic semiconductor/metal (MIOM) capacitors. These capacitors are structurally similar to metal/insulator/semiconductor/(metal) (MIS) capacitors found in standard semiconductor textbooks. The difference between the two capacitors is that the (organic) semiconductor/metal contacts in the MIOM capacitors are of the Schottky type, whereas the contacts in the MIS capacitors are of the ohmic type. Moreover, the mobilities of most organic semiconductors are significantly lower than those of inorganic semiconductors. As the MIOM structure is identical to the electrode portion of an organic field-effect transistor (OFET) with top-contact and bottom-gate electrodes, the hysteretic behavior of the OFET transfer characteristics can be deduced from the NTE phenomenon observed in MIOM capacitors.
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Xu, Yuanqing, Weibiao Wang, Zhexue Chen, Xinyu Sui, Aocheng Wang, Cheng Liang, Jinquan Chang i in. "A general strategy for semiconductor quantum dot production". Nanoscale 13, nr 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.
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Hasegawa, H., H. Ohno, H. Ishii, T. Haga, Y. Abe i H. Takahashi. "Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors". Applied Surface Science 41-42 (styczeń 1990): 372–82. http://dx.doi.org/10.1016/0169-4332(89)90087-1.
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Das, Rajat Suvra, i Arjun Pal Chowdhury. "Enhancing Semiconductor Functional Verification with Deep Learning with Innovation and Challenges". International Journal of Computing and Engineering 5, nr 3 (19.04.2024): 22–32. http://dx.doi.org/10.47941/ijce.1814.
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Purpose: Universally, the semiconductor is the foundation of electronic technology used in an extensive range of applications such as computers, televisions, smartphones, etc. It is utilized to create ICs (Integrated Circuits), one of the vital electronic device components. The Functional verification of semiconductors is significant to analyze the correctness of an IC for appropriate applications. Besides, Functional verification supports the manufacturers in various factors such as quality assurance, performance optimization, etc. Traditionally, semiconductor Functional verification is carried out manually with the support of expertise. However, it is prone to human error, inaccurate, expensive and time-consuming. To resolve the problem, DL (Deep Learning) based technologies have revolutionized the functional verification of semiconductor device. The utilization of various DL algorithms automates the semiconductor Functional verification to improve the semiconductor quality and performance. Therefore, the focus of this study is to explore the advancements in the functional verification process within the semiconductor industry.
Methodology: It begins by examining research techniques used to analyse existing studies on semiconductors. Additionally, it highlights the manual limitations of semiconductor functional verification and the need for DL-based solutions.
Findings: The study also identifies and discusses the challenges of integrating DL into semiconductor functional verification. Furthermore, it outlines future directions to improve the effectiveness of semiconductor functional verification and support research efforts in this area. The analysis reveals that there is a limited amount of research on deep learning-based functional verification, which necessitates further enhancement to improve the efficiency of functional verification.
Unique contribution to theory, policy and practice: The presented review is intended to support the research in enhancing the efficiency of the semiconductor functional verification. Furthermore, it is envisioned to assist the semiconductor manufacturers in the field of functional verification regarding efficient verifications, yield enhancement, improved accuracy, etc.
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Chen, Xingyu. "Methods for Improving the Mobility of Semiconductor Carriers". Highlights in Science, Engineering and Technology 84 (27.02.2024): 81–85. http://dx.doi.org/10.54097/pkn24993.
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Semiconductor is the core of the information technology industry and a leading industry supporting economic and social development. Its products are mainly used in various fields such as computers, digital electronics, electrical, transportation, medical, aerospace, and so on. In recent years, the semiconductor application field has been continuously expanding with technological progress, and emerging fields such as 5G, artificial intelligence, intelligent driving, robotics, and drones have flourished, bringing new opportunities to the semiconductor industry. The main properties of semiconductors include conductivity, internal field, carrier concentration, and mobility. These properties are influenced by factors such as the preparation, processing technology, and device design of semiconductor materials. Among them, mobility is an important physical quantity that marks the speed of semiconductor carrier movement under the action of an electric field, and its size directly affects the working frequency and speed of semiconductor devices and circuits. For bipolar transistors, high carrier mobility can shorten the time for carriers to cross the base region, increase the characteristic frequency, and effectively improve the frequency, speed, and noise performance of the device. For field-effect transistors, improving carrier mobility is of greater significance. Therefore, this article summarizes different methods for improving semiconductor carrier mobility, including reducing impurities and defects, controlling lattice structure, adjusting doping element concentration, and intermolecular stacking. This page also describes the areas in which semiconductors with high carrier mobility are used, to serve as a reference for future semiconductor research.
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Ngai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker i in. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities". MRS Advances 1, nr 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.
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ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.
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Hellenthal, Berthold. "Future Challenges and Roadmaps of Semiconductor, Packaging and Integration". International Symposium on Microelectronics 2015, S1 (1.10.2015): S1—S37. http://dx.doi.org/10.4071/isom-2015-slide-2.
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More than 80% of all automotive innovations are directly or indirectly enabled by semiconductors. In recent years premium cars became an early adopter of new technologies to enable new customer functions. Nowadays automotive is even pushing new semiconductor and packaging technologies in some areas. The automotive megatrends continuously impose new challenges on semicondcutors and their package in performance, energy efficiency as well as in reliability and robustness. The presentation will introduce the automotive megatrends and explain the new challenges by practical examples. In addition it will be explained how the Audi semiconductor strategy, the Progressive SemiConductor Program (PSCP), addresses the challenges - synchronizing the development speed of semiconductors with the need for increased reliability.
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Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang i Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys". Materials Science Forum 1107 (6.12.2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.
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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.
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Kim, Dongwook, Hyeonju Lee, Bokyung Kim, Sungkeun Baang, Kadir Ejderha, Jin-Hyuk Bae i Jaehoon Park. "Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance". Materials 15, nr 19 (29.09.2022): 6763. http://dx.doi.org/10.3390/ma15196763.
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The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.
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Das, Rajat Suvra. "TensorFlow: Revolutionizing Large-Scale Machine Learning in Complex Semiconductor Design". International Journal of Computing and Engineering 5, nr 3 (19.04.2024): 1–9. http://dx.doi.org/10.47941/ijce.1812.
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The development of semiconductor manufacturing processes is becoming more intricate in order to meet the constantly growing need for affordable and speedy computing devices with greater memory capacity. This calls for the inclusion of innovative manufacturing techniques hardware components, advanced intricate assemblies and. Tensorflow emerges as a powerful technology that comprehensively addresses these aspects of ML systems. With its rapid growth, TensorFlow finds application in various domains, including the design of intricate semiconductors. While TensorFlow is primarily known for ML, it can also be utilized for numerical computations involving data flow graphs in semiconductor design tasks. Consequently, this SLR (Systematic Literature Review) focuses on assessing research papers about the intersection of ML, TensorFlow, and the design of complex semiconductors. The SLR sheds light on different methodologies for gathering relevant papers, emphasizing inclusion and exclusion criteria as key strategies. Additionally, it provides an overview of the Tensorflow technology itself and its applications in semiconductor design. In future, the semiconductors may be designed in order to enhance the performance, and the scalability and size can be increased. Furthermore, the compatibility of the tensor flow can be increased in order to leverage the potential in semiconductor technology.
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Gunshor, Robert L., i Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research". MRS Bulletin 20, nr 7 (lipiec 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.
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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.
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Ma, Liang, Shuang Chen, Yun Shao, You-Long Chen, Mo-Xi Liu, Hai-Xia Li, Yi-Ling Mao i Si-Jing Ding. "Recent Progress in Constructing Plasmonic Metal/Semiconductor Hetero-Nanostructures for Improved Photocatalysis". Catalysts 8, nr 12 (7.12.2018): 634. http://dx.doi.org/10.3390/catal8120634.
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Hetero-nanomaterials constructed by plasmonic metals and functional semiconductors show enormous potential in photocatalytic applications, such as in hydrogen production, CO2 reduction, and treatment of pollutants. Their photocatalytic performances can be better regulated through adjusting structure, composition, and components’ arrangement. Therefore, the reasonable design and synthesis of metal/semiconductor hetero-nanostructures is of vital significance. In this mini-review, we laconically summarize the recent progress in efficiently establishing metal/semiconductor nanomaterials for improved photocatalysis. The defined photocatalysts mainly include traditional binary hybrids, ternary multi-metals/semiconductor, and metal/multi-semiconductors heterojunctions. The underlying physical mechanism for the enhanced photocatalysis of the established photocatalysts is highlighted. In the end, a brief summary and possible future perspectives for further development in this field are demonstrated.
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Smertenko, P. S. "Vadim Evgenievich Lashkarev and optoelectronics". Optoelektronìka ta napìvprovìdnikova tehnìka 58 (21.12.2023): 5–15. http://dx.doi.org/10.15407/iopt.2023.58.005.
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On 7 October 2023, the scientific community celebrated the 120th anniversary of the birth of Vadym Yevhenovych Lashkariov, a physicist, discoverer of the p-n junction, teacher, organiser of science, and simply a smart and decent person (07.10.2003 - 01.12.1974). In our opinion, the significance and influence of V.E. Lashkarev on the further development of physics, in particular semiconductor physics in Ukraine, has not been sufficiently revealed, although a number of articles have been published over the past decades on the life and scientific work of Vadym Yevhenovych. This article aims to look at the scientific work of Vadym Yevhenovych in the light of the newly emerging field of optoelectronics. The article shows some new aspects of the life and work of Academician of the National Academy of Sciences of Ukraine Vadym Yevhenovych Lashkariov, which are based on documents signed by him personally. Despite the blows of fate: exile and the Second World War, Vadym Yevhenovych retained his scientific inspiration and a far-sighted vision of the development of a new scientific field - semiconductor physics. The directions of the V. Lashkarev scientific school of semiconductor physics are analysed in details: studies of generation-recombination processes and electronic transport in semiconductors and semiconductor structures; theoretical and experimental studies of surface phenomena in semiconductors; theoretical and experimental studies of electronic transfer of two- dimensional free charge carriers in semiconductor nanostructures; studies of electrophysical and photoelectric effects in semiconductors and layered structures. Some examples of monographs and articles by students and followers of the V. Lashkarev scientific school, who developed the initial scientific fields and modernised the physics of semiconductors, are given.
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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, nr 10 (październik 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.
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Kohl, Paul. "(Invited) Photoelectrochemical Processing of Semiconductor Devices". ECS Meeting Abstracts MA2022-02, nr 30 (9.10.2022): 1105. http://dx.doi.org/10.1149/ma2022-02301105mtgabs.
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Many of the chemical processes used to fabricate and metallize semiconductor devices are based on oxidation-reduction reaction. Electro-chemical processes using the semiconductor itself have the advantage of being able to photo-generate the reactants within the semiconductor to carryout local reactions. The development of photoelectrochemical methods to process features in semiconductor devices is a subject unique to the Electrochemical Society because it is at the intersection of electrochemistry and semiconductor device fabrication. Specific symposia at ECS meeting have explored these subjects. In particular, Noel Buckley was a motivating force behind the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) symposium series which offered venues for presenting interdisciplinary results of this kind. In this talk, several examples of chemical and photoelectrochemical processes for semiconductor device manufacturing from past ECS SOTAPOCS symposia, organized by Noel Buckley, will be described.
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Goswami, Omanjana. "Chipping in: Critical minerals for semiconductor manufacturing in the U.S." MIT Science Policy Review 4 (31.08.2023): 118–26. http://dx.doi.org/10.38105/spr.tnepby7ntp.
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In recent light of strained supply chains and global geopolitical tension, the U.S. is making significant investments to establish semiconductor manufacturing capacity and domestic supply chains for critical mineral resources to reduce dependence on other countries. Semiconductor-related critical minerals have become increasingly important considering the rise in demand for final products using semiconductor chips. The CHIPS and Science Act, passed in 2022, serves as the largest U.S. policy mechanism to expand investment in this field and enhance domestic semiconductor manufacturing capacity. This review outlines the critical mineral resources required for semiconductors, their origin, and the degree of dependency the U.S. faces across semiconductor supply chains and manufacturing. In the long term, more comprehensive policy, coupled with significant investment to ramp up domestic critical mineral mining and recovery, could enable the U.S. to establish a stable domestic supply to better support semiconductor manufacturing.
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B. Prakash Ayyappan, T. Parthiban, M. Barkavi, V. Nithyapoorani, M. Sathya i G. Gopperumdevi. "Study on enhanced real time applications of compound semiconductor (SiC and GaN) power devices with AI and IoT Technologies". International Journal of Science and Research Archive 12, nr 2 (30.07.2024): 947–64. http://dx.doi.org/10.30574/ijsra.2024.12.2.1309.
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Compound semiconductors, composed of two or more elements, differ from single-element semiconductors like silicon. These materials are crucial because they have a direct band gap, unlike elemental semiconductors such as silicon and germanium, making them ideal for optoelectronic applications like LEDs, semiconductor lasers, and photo detectors. Robots rely on sophisticated sensors to collect vital data for their operation, including internal data on temperature, moisture, movement, and position, as well as external data from images, infrared light, and sound, processed through semiconductor units. Compound semiconductors are integral to numerous technologies around us, including electric cars, solar panels, satellites, spacecraft, and smart phones. Future innovations like driverless cars and artificial intelligence will also heavily depend on these materials.
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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry". E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.
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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
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Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah i Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices". Materials Science Forum 737 (styczeń 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.
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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of organic semiconductors raises the quest for a deep understanding of fundamental issues and relevant electronic processes. Organic semiconductor thin film is sandwiched between two metal electrodes of indium tin oxide (ITO) and aluminum to form organic photovoltaic solar cell. Several types of organic semiconductors have been utilized as the photoactive layer in the solution processable organic solar cells. The performance of the fabricated solar cells can be improved by dissolving the material in the right choice of solvent, annealing of organic thin film, slowly forming the thin film and introducing an infra-red absorbance layer. Besides, organic semiconductor-based sensors can be fabricated utilizing either in a sandwidch type or planar type device. Some of these techniques and the experimental results are presented.
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Kim, Kyunghun, Hocheon Yoo i Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications". Polymers 14, nr 14 (21.07.2022): 2960. http://dx.doi.org/10.3390/polym14142960.
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The life expectancy of humans has been significantly elevated due to advancements in medical knowledge and skills over the past few decades. Although a lot of knowledge and skills are disseminated to the general public, electronic devices that quantitatively diagnose one’s own body condition still require specialized semiconductor devices which are huge and not portable. In this regard, semiconductor materials that are lightweight and have low power consumption and high performance should be developed with low cost for mass production. Organic semiconductors are one of the promising materials in biomedical applications due to their functionalities, solution-processability and excellent mechanical properties in terms of flexibility. In this review, we discuss organic semiconductor materials that are widely utilized in biomedical devices. Some advantageous and unique properties of organic semiconductors compared to inorganic semiconductors are reviewed. By critically assessing the fabrication process and device structures in organic-based biomedical devices, the potential merits and future aspects of the organic biomedical devices are pinpointed compared to inorganic devices.
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MAHMOOD, RASHA SHAKIR, Muna Ali Shakir, Younis Turki Mahmood i Dhia Hadi Hussain. "Semiconductors between past and present". Journal of Advanced Sciences and Engineering Technologies 3, nr 1 (5.01.2022): 54–56. http://dx.doi.org/10.32441/jaset03.01.05.
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There is no doubt that the semiconductor contributed very significantly to changing our world in the long run, which made it very necessary to write this article and shed light on the semiconductor between past and present. Whereas, this article is not intended to teach you semiconductor chemistry and its applications, but it also aims to refresh your memory with everything related to semiconductors from the moment of sunrise to the present day.As known, people need to communicate with each other in order to meet their daily and professional needs. In the past, the communication process was very difficult and sometimes costly until the emergence of what is known as semiconductors, which in turn opened new purview in the world of communications through its entry into the communication devices industry and computers industry and its ability to processing The data, in turn, facilitated and summarized a very long journey on humans in the field of industry. Today, we are on the beginning of a new sun rise of semiconductor, especially after the emergence of the so-called nanotechnology, where semiconductors have been observed a very large role in the development of this technology, not only but have become Part of the integral ones.
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Paksyutov, Georgiy. "Japan’s Semiconductor Industry: Topical Trends and Strategic Importance". Problemy dalnego vostoka, nr 6 (2022): 113. http://dx.doi.org/10.31857/s013128120023340-5.
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The article is dedicated to studying both the long-term and current trends in Japan’s semiconductor industry. Semiconductor production is crucial for the present-day economy, and its importance is only increased by the ongoing process of digital transformation, by COVID-19 pandemic and the international political turbulence that puts strain on the existing global value chains. Moreover, semiconductors are urgently needed by electronics and car producers and by other industries that employ microchips, they could contribute to reducing Japan’s dependence on imported energy commodities. Developing the semiconductor industry is a task stated in official documents of the Japan’s government. However, Japanese semiconductor industry has been in relative decline since the late 1980-s, and the national producers now lag behind the global leaders in terms of technology. Various measures are being implemented to revitalize the industry and reverse the decline (that was partially caused by trade tensions with the US), including state subsidies and increased cooperation with foreign companies. If Japan manages to achieve its ambitious goals, such as doubling the size of the national semiconductor market by 2030 and launching the production of the new-generation microchips, it will lay the ground for other large-scale projects including the creation of ‘Society 5.0’ and the achievement of carbon neutrality. To proceed with the tasks, it is urgent that Japan’s semiconductor industry overcomes the current engineer shortage and employs the globally competitive technology. As the global demand for semiconductors expands, the semiconductor industry could become the engine of growth in other related sectors of Japan’s economy.
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Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe i Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor". Journal of Materials Research 4, nr 2 (kwiecień 1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.
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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
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Xia, Qingjiao. "Charge Transport Mechanism of Organic Semiconductors Based on Molecular Dynamics Simulation". Academic Journal of Science and Technology 7, nr 3 (27.10.2023): 148–50. http://dx.doi.org/10.54097/ajst.v7i3.13265.
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The aim of this paper is to investigate the charge transport mechanism in organic semiconductors based on molecular dynamics simulation. Molecular dynamics simulation, as an effective computational method, can reveal the microscopic mechanism of charge transport in organic semiconductors. The basic principles and methods of molecular dynamics simulation will be introduced in the paper, and its application in studying charge transport in organic semiconductors will be discussed. Through the simulation analysis, the effects of key parameters such as intermolecular interactions, carrier mobility and electron transport on the performance of organic semiconductor devices can be revealed, providing guidance for the design and optimization of organic semiconductor devices.
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Meng, X. Y., D. Y. Liu i G. W. Qin. "Band engineering of multicomponent semiconductors: a general theoretical model on the anion group". Energy & Environmental Science 11, nr 3 (2018): 692–701. http://dx.doi.org/10.1039/c7ee03503a.
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Development of energy conversion semiconductor materials has attracted increasing interest over the past three decades, but most successful semiconductors are unary or binary, rather than multicomponent semiconductors (MCSCs).
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Lu, Yuzheng, Youquan Mi, Junjiao Li, Fenghua Qi, Senlin Yan i Wenjing Dong. "Recent Progress in Semiconductor-Ionic Conductor Nanomaterial as a Membrane for Low-Temperature Solid Oxide Fuel Cells". Nanomaterials 11, nr 9 (3.09.2021): 2290. http://dx.doi.org/10.3390/nano11092290.
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Reducing the operating temperature of Solid Oxide Fuel Cells (SOFCs) to 300–600 °C is a great challenge for the development of SOFC. Among the extensive research and development (R&D) efforts that have been done on lowering the operating temperature of SOFCs, nanomaterials have played a critical role in improving ion transportation in electrolytes and facilitating electrochemical catalyzation of the electrodes. This work reviews recent progress in lowering the temperature of SOFCs by using semiconductor-ionic conductor nanomaterial, which is typically a composition of semiconductor and ionic conductor, as a membrane. The historical development, as well as the working mechanism of semiconductor-ionic membrane fuel cell (SIMFC), is discussed. Besides, the development in the application of nanostructured pure ionic conductors, semiconductors, and nanocomposites of semiconductors and ionic conductors as the membrane is highlighted. The method of using nano-structured semiconductor-ionic conductors as a membrane has been proved to successfully exhibit a significant enhancement in the ionic conductivity and power density of SOFCs at low temperatures and provides a new way to develop low-temperature SOFCs.
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Jensen, Tim, i David L. Saums. "Metallic TIM Testing and Selection for Harsh Environment Applications for GaN RF Semiconductors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1.01.2016): 000079–86. http://dx.doi.org/10.4071/2016-hitec-79.
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Summary An important determinant of device reliability is operating temperature control. Maintaining a semiconductor device at or below the maximum rated junction temperature (Tj) is accomplished through careful thermal management design and selection of well-performing thermal interface materials (TIM) that minimize efficiency losses in packaging and between the semiconductor device package and a heat sink or liquid cold plate. Thermal management design is increasingly important in harsh operating environments, especially where higher operating temperatures are specified. Minimizing thermal resistances through each semiconductor package material stack and at the external case or package surface of the device are important aspects of maintaining operating temperatures within specified maximum values. In addition, certain semiconductor devices require an electrical path from the semiconductor case to an external component. Maximizing electrical performance of gallium nitride (GaN) RF semiconductors is critical to system performance, as a primary example. The on-going transition within RF and microwave systems from silicon to GaN devices has increased the need for thermal interface materials which offer both improved thermal performance and electrical conductivity. Additionally, GaN semiconductor die are typically smaller in footprint and, even with equivalent power dissipation values, therefore may operate with higher heat flux values that require greater attention to proper thermal solution design. To address such needs, recently-developed forms of metallic TIM preforms are available for integrated circuits, power semiconductors, and RF devices. Understanding how these materials may be tested and selected for specific application requirements is the subject of this discussion.
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Yang, Xiaobing, Zhaodong Wen, Ziling Wu i Xuetao Luo. "Synthesis of ZnO/ZIF-8 hybrid photocatalysts derived from ZIF-8 with enhanced photocatalytic activity". Inorganic Chemistry Frontiers 5, nr 3 (2018): 687–93. http://dx.doi.org/10.1039/c7qi00752c.
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Controllable conjunction of semiconductors with metal organic frameworks (MOFs) has been an efficient tool to enhance the chemical and physical properties of semiconductors by forming semiconductor–MOF hybrid structures.
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TALANINA, I. B. "EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS". Journal of Nonlinear Optical Physics & Materials 05, nr 01 (styczeń 1996): 51–57. http://dx.doi.org/10.1142/s0218863596000064.
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The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.
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Qiu, Zekun, Xianao Shen i Zirui Zhao. "Development Trends and Prospects of Semiconductor Devices and Technology". Highlights in Science, Engineering and Technology 81 (26.01.2024): 374–80. http://dx.doi.org/10.54097/jc4btz06.
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Semiconductor devices and technology have undergone remarkable development over the years, driving innovations across various industries. This paper explores the historical background and evolution of semiconductor devices, examining key breakthroughs and trends. It also delves into the current state of semiconductor technology, highlighting artificial intelligence optimization, nanotechnology, liquid biopsy technology, deep learning, and quantum computers. These advancements are reshaping the landscape of semiconductor devices, promising enhanced performance and applications in diverse fields. Moreover, the impact of semiconductor technology is expanding into areas such as healthcare, energy, and beyond, offering new avenues to address global challenges. This paper underscores the significance of semiconductor technology as a cornerstone of modern technology and innovation. From its humble beginnings with the transistor to its current pivotal role in AI, nanotechnology, liquid biopsy, deep learning, and quantum computing, semiconductors continue to be the driving force behind a technological revolution that transcends boundaries and holds immense promise for our collective future.
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MOLENKAMP, LAURENS W. "DEVICE CONCEPTS IN SEMICONDUCTOR SPINTRONICS". International Journal of Modern Physics B 22, nr 01n02 (20.01.2008): 119. http://dx.doi.org/10.1142/s0217979208046207.
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Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices will be covered. For example, I will discuss resonant tunneling diodes (RTDs) fabricated from paramagnetic II-VI semiconductors that can be operated as a voltage controlled spin-switch. A quantum dot version of these RTDs exhibits, unexpectedly, remanent magnetism at zero external field, which we interpret as resulting from tunneling through a single magnetic polaron. In the ferromagnetic semiconductor ( Ga, Mn ) As we have observed a very large spin valve effect due to domain wall pinning at sub-10 nm sized constrictions. Furthermore, we have found a novel magnetoresistance effect in this material, dubbed tunnel anisotropic magnetoresistance (TAMR), which is due to the strongly (magneto-)anisotropic density of states in a ferromagnetic semiconductor. The effect leads to the observation of a spin valve-like behavior in tunnel structures containg a single ferromagnetic layer and also dominates the spin-valve signal obtained from structures containing two ( Ga, Mn ) As layers, where the effect may cause resistance changes of five orders of magnitude. Note from Publisher: This article contains the abstract only.
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Ni, Junhao, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan i Shaoqing Xiao. "Status and prospects of Ohmic contacts on two-dimensional semiconductors". Nanotechnology 33, nr 6 (18.11.2021): 062005. http://dx.doi.org/10.1088/1361-6528/ac2fe1.
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Abstract In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.
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Matthews, D., i A. Stanley. "The Potential Dependence of the Rate Constant for Charge Transfer at the Semiconductor-Redox Electrolyte Interface". Australian Journal of Chemistry 49, nr 7 (1996): 731. http://dx.doi.org/10.1071/ch9960731.
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The kinetics of charge transfer at the semiconductor- redox electrolyte interface is described in terms of the Gurney- Gerischer -Marcus (GGM) model by using nuclear configuration potential energy diagrams, electronic configuration potential energy diagrams, density of state distributions and rate constant distributions. The model of identical parabolas for the nuclear configuration diagrams is used; this leads to Gaussian oxidant and reductant distribution functions, g(E), where E is the vertical transition (Franck-Condon) energy. The rate constant distribution, k(E), is obtained from the overlap between occupied and unoccupied state distribution functions of the semiconductor and redox electrolyte. Integration of k(E) gives the rate constant which is calculated as a function of the Helmholtz potential, VH, for various values of the reorganization energy, Ereorg. Three types of semiconductor are considered: intrinsic, doped and highly doped. For intrinsic semiconductors the charge transfer rate constant is relatively small and involves both the conduction and valence bands. For symmetric charge transfer (zero energy change, E0.0, for the reaction) both oxidation and reduction occur between the redox electrolyte and both bands of the semiconductor. For unsymmetrical reactions, charge transfer tends to involve only one of the bands; for net reduction, the valence band is involved, whereas for net oxidation the conduction band is involved. For doped semiconductors the rate constant is larger and only one band is involved; for n-type it is the conduction band, and for p-type it is the valence band. For highly doped semiconductors with the Fermi level in either the conduction or valence bands. the rate constant is even larger and only one band is involved. Changes in Helmholtz potential affect k(E) in a similar way to that for metals. However, unlike for metals, the calculated Tafel plots for highly doped n-type semiconductors are shown to exhibit a Marcus inversion region. This is a consequence of the energy gap between conduction and valence bands of the semiconductor. For doped semiconductors, changes in the Helmholtz potential also produce a maximum in the Tafel plot and because of the relatively low currents involved this maximum should be experimentally observable. For intrinsic semiconductors, variation of Helmholtz potential without inclusion of band bending in the semiconductor produces unexpectedly low Tafel slopes which are related to the ratio of the band gap to the reorganization energy, so that the larger the ratio the smaller the Tafel slope. This unexpected result, which amounts to an assumption of band edge unpinning, is shown to accurately account for the experimentally observed Tafel slopes for reduction at n-WSe2 of the dimethylferrocenium ion in acetonitrile.
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Safdar, A., A. Mushtaq, S. Usman i Aman-ur-Rehman. "Magnetosonic waves in ion trapped semiconductor chip plasma with effect of exchange correlation potential and relativistic degeneracy". Physica Scripta 97, nr 2 (28.01.2022): 025603. http://dx.doi.org/10.1088/1402-4896/ac4c51.
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Abstract The generalized dispersion relation for the propagation of magnetohydrodynamic (MHD) waves in Cd+ ion trapped semiconductor electron-hole-ion plasmas is studied with effect of quantum corrections. The important ingredients of these corrections occurred due to Bohm potential, relativistic degeneracy, exchange-correlation potential and spin magnetization and have significant impact on the dispersion properties of perpendicular and oblique modes of MHD wave. The derived results are numerically analyzed by using the numerical parameters of GaAs, GaSb, GaN, and InP semiconductors plasmas. From the numerical analysis it is observed that for higher number density, the phase speed of magnetosonic wave is larger for the InP semiconductor, while for low number density plasma region, it gives lower values for GaAs semiconductor. Similarly the phase speed of magnetosonic wave for GaAs decreases with applied magnetic field for different regime of number density. Due to exchange-correlation potential it is found that the frequencies of magnetosonic waves are blue-shifted means that it has magnified the phase speed. It is also shown that frequency of oblique MHD wave for GaAs semiconductor plasmas increases (decreases) with number density of electrons (holes). The relativistic degeneracy term (γ) for given number density is numerically calculated (1.00011 ∼ 1.0058) for all the above-mentioned semiconductors and it is observed that due to its mild numerical value it has not significant impact on graphical manipulation. The Alfven speed for above compound semiconductors with B 0 ≤ 104 G is also calculated which are in the permissible range of order 104 cm/s to 107 cm/s. The results are helpful to understand the energy transport in semiconductor plasma in the presence of magnetic field.
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Rakhymbekov, Aitbai, Aigul Idrisova, Rosa Saduakasova, Gulmira Nurbosynova i Meruert Turlybekova. "Preparation of a Semiconductor Film with the Aid of a Superionic". Key Engineering Materials 771 (czerwiec 2018): 130–35. http://dx.doi.org/10.4028/www.scientific.net/kem.771.130.
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The actuality of the topic chosen by us lies in the fact that the effect of oxygen on the properties of semiconductors has not been studied sufficiently well, mainly because of the imperfections of methods for controlling the oxygen content in semiconductor materials. Almost in all such materials, oxygen is present either as an uncontrolled impurity or as a doping additive, or, in the case of oxide semiconductors, as in our case with a semiconductor film of vanadium dioxide, is part of the compound. The oxygen contained in the semiconductor film significantly affects the property of the material: in the first two cases, this influence is determined by the amount and state of the impurity, in the third - by the composition, or by the stoichiometry of the oxide compound. We set a goal to develop a technique for obtaining a semiconductor film of vanadium dioxide in a controlled atmosphere of oxygen. The semiconductor film thus obtained is used in holography to record and store optical information. For the production of VO2 films by oxidation in a controlled atmosphere, an apparatus including an oxygen pump based on stabilized zirconia dioxide has been developed. The principle of operation and the main characteristics of such an oxygen pump is the unique application of the property of the superionics - to carry through itself exclusively oxygen ions under the influence of a constant current field and a high temperature. The technique developed by us for obtaining a semiconductor film of vanadium dioxide in a controlled atmosphere of oxygen has no analog.
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М. Н. Аликулов. "ЗАВИСИМОСТЬ СТРУКТУРЫ ЗОН ПОЛУПРОВОДНИКОВ ОТ СКОРОСТИ РЕКОМБИНАЦИИ МЕЖДУ ЗОНАМИ". World Science 1, nr 5(57) (31.05.2020): 31–34. http://dx.doi.org/10.31435/rsglobal_ws/31052020/7073.
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This article researches the dependence of recombination processes that occur in semiconductors on the structure of semiconductor zones. The advantages of using faulty zonal semiconductors in the development of solar cells have been substantiated.
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Yoo, Young, i Keuntae Cho. "Key Traits of Leading Sustainable Firms in the Semiconductor Industry". Sustainability 16, nr 11 (28.05.2024): 4563. http://dx.doi.org/10.3390/su16114563.
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Few studies have investigated sustainable management in the semiconductor industry. Consequently, this study analyzed the characteristics of companies excelling in sustainable management in the semiconductor industry using chief executive officer messages. It compared high- and low-performing groups to identify leading sustainable firms. Centrality analysis was conducted to extract keywords, which were mapped to the sustainability criteria to conduct network analysis. The results showed that the high-performing group emphasized sustainable development across the semiconductor industry ecosystem, while the low-performing group focused on internal sustainability aspects. This underscores the need for effective sustainable development in the semiconductor industry that extends beyond individual company efforts and embraces industry solidarity. Thus, this study presents a methodology that can be applied to similar studies in industries beyond semiconductors.
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Dezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe i Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (styczeń 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
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An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.
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Su, Xiao-Qian, i Xue-Feng Wang. "Electronic and Spintronic Properties of Armchair MoSi2N4 Nanoribbons Doped by 3D Transition Metals". Nanomaterials 13, nr 4 (9.02.2023): 676. http://dx.doi.org/10.3390/nano13040676.
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Structural and physical properties of armchair MoSi2N4 nanoribbons substitutionally doped by 3d transition metals (TM) at Mo sites are investigated using the density functional theory combined with the non-equilibrium Green’s function method. TM doping can convert the nonmagnetic direct semiconductor into device materials of a broad variety, including indirect semiconductors, half semiconductors, metals, and half metals. Furthermore the 100% spin filtering behavior in spin-up and spin-down half metals, a negative differential resistance with peak-to-valley ratio over 140 and a rectification effect with ratio over 130 are predicted, as well as semiconductor behavior with high spin polarization.