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Gotowa bibliografia na temat „Semiconductor-Semiconductor Core Shell Nanomaterials”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Semiconductor-Semiconductor Core Shell Nanomaterials"

Wang, Feifan, Yanjie Huang, Zhigang Chai, Min Zeng, Qi Li, Yuan Wang i Dongsheng Xu. "Photothermal-enhanced catalysis in core–shell plasmonic hierarchical Cu7S4microsphere@zeolitic imidazole framework-8". Chemical Science 7, nr 12 (2016): 6887–93. http://dx.doi.org/10.1039/c6sc03239g.

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Zhang, Junjie, Suling Zhao, Zheng Xu, Ligang Zhang, Pengfei Zuo i Qixiao Wu. "Near-infrared light-driven photocatalytic NaYF4:Yb,Tm@ZnO core/shell nanomaterials and their performance". RSC Advances 9, nr 7 (2019): 3688–92. http://dx.doi.org/10.1039/c8ra07861k.

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Vahidzadeh, Ehsan, i Karthik Shankar. "Insights into the Machine Learning Predictions of the Optical Response of Plasmon@Semiconductor Core-Shell Nanocylinders". Photochem 3, nr 1 (2.03.2023): 155–70. http://dx.doi.org/10.3390/photochem3010010.

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The application domain of deep learning (DL) has been extended into the realm of nanomaterials, photochemistry, and optoelectronics research. Here, we used the combination of a computer vision technique, namely convolutional neural network (CNN), with multilayer perceptron (MLP) to obtain the far-field optical response at normal incidence (along cylinder axis) of concentric cylindrical plasmonic metastructures such as nanorods and nanotubes. Nanotubes of Si, Ge, and TiO2 coated on either their inner wall or both their inner and outer walls with a plasmonic noble metal (Au or Ag) were thus modeled. A combination of a CNN and MLP was designed to accept the cross-sectional images of cylindrical plasmonic core-shell nanomaterials as input and rapidly generate their optical response. In addition, we addressed an issue related to DL methods, namely explainability. We probed deeper into these networks’ architecture to explain how the optimized network could predict the final results. Our results suggest that the DL network learns the underlying physics governing the optical response of plasmonic core-shell nanocylinders, which in turn builds trust in the use of DL methods in materials science and optoelectronics.

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Bi, Qingyuan, Xieyi Huang, Yanchun Dong i Fuqiang Huang. "Conductive Black Titania Nanomaterials for Efficient Photocatalytic Degradation of Organic Pollutants". Catalysis Letters 150, nr 5 (25.11.2019): 1346–54. http://dx.doi.org/10.1007/s10562-019-02941-1.

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Abstract Titanium dioxide (TiO2) as an important semiconductor is widely used in the fields of solar cell, solar thermal collectors, and photocatalysis, but the visible-light power harvest remains insufficient due to the little effective visible-light absorption and many carrier-recombination centers originating from the wide band gap structure. Herein, conductive black titania (BT) nanomaterials with crystalline-TiO2-core/amorphous-TiO2−x-shell structure prepared through two-zone Al-reduction route are found efficient in photocatalyzing the degradation of organic pollutants to environmentally friendly products under full solar and even visible light irradiation. The unique core–shell structure and numerous surface oxygen vacancies or Ti3+ species in the amorphous layer accompanying prominent physicochemical properties of narrow band gap, high carrier concentration, high electron mobility, and excellent separation and transportation of photoinduced e−−h+ pairs result in exceptional photocatalytic efficiency. The optimized BT-500 (pristine TiO2 treated at 500 °C during two-zone Al-reduction process) catalyst achieves superior photocatalytic degradation rates for toluene and ethyl acetate as well as an excellent photostability with high degradation efficiency of 93% for the 6th reuse. Graphic Abstract

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Xue, Shirui, Sicheng Cao, Zhaoling Huang, Daoguo Yang i Guoqi Zhang. "Improving Gas-Sensing Performance Based on MOS Nanomaterials: A Review". Materials 14, nr 15 (30.07.2021): 4263. http://dx.doi.org/10.3390/ma14154263.

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In order to solve issues of air pollution, to monitor human health, and to promote agricultural production, gas sensors have been used widely. Metal oxide semiconductor (MOS) gas sensors have become an important area of research in the field of gas sensing due to their high sensitivity, quick response time, and short recovery time for NO2, CO2, acetone, etc. In our article, we mainly focus on the gas-sensing properties of MOS gas sensors and summarize the methods that are based on the interface effect of MOS materials and micro–nanostructures to improve their performance. These methods include noble metal modification, doping, and core-shell (C-S) nanostructure. Moreover, we also describe the mechanism of these methods to analyze the advantages and disadvantages of energy barrier modulation and electron transfer for gas adsorption. Finally, we put forward a variety of research ideas based on the above methods to improve the gas-sensing properties. Some perspectives for the development of MOS gas sensors are also discussed.

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Chatterjee, Aniruddha, i Dharmesh Hansora. "Graphene Based Functional Hybrid Nanostructures: Preparation, Properties and Applications". Materials Science Forum 842 (luty 2016): 53–75. http://dx.doi.org/10.4028/www.scientific.net/msf.842.53.

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The intent of this chapter is to provide a basic overview of recent advances in graphene based hybrid nanostructures including their preparation, properties and potential applications in various field. The development of graphene based functional materials, has shown their tremendous interest in areas of science, engineering and technology. These materials include graphene supported inorganic nanomaterials and films, graphene-metal decorated nanostructures, Core/shell structures of nanocarbon-graphene and graphene doped polymer hybrid nanocomposites etc. They have been prepared by various methods like chemical vapor deposition of hydrocarbon on metal surface, liquid phase exfoliation of graphite, chemical reduction of GO, silver mirror reaction, catalysis, in-situ hydroxylation and sono sol-gel route, respectively. The attractive properties of graphene and their derivatives filled with metal nanoparticles (e.g. Au, Ag, Pd, Pt, Ni, and Cu) have made them ideal templates. Graphene and their derivatives have also been decorated with various semiconductor nanomaterials (e.g. metal oxides and dioxides, metal sulfides). These metal decorated graphene nanostructures can be useful as functional hybrid nanomaterials in electronics, optics, and energy based products like solar cells, fuel cells, Li-ion batteries and supercapacitors, ion exchange and molecular adsorption.

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Son, Jae Sung, Jong-Soo Lee, Elena V. Shevchenko i Dmitri V. Talapin. "Magnet-in-the-Semiconductor Nanomaterials: High Electron Mobility in All-Inorganic Arrays of FePt/CdSe and FePt/CdS Core–Shell Heterostructures". Journal of Physical Chemistry Letters 4, nr 11 (22.05.2013): 1918–23. http://dx.doi.org/10.1021/jz400612d.

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García, Javier, Ruth Gutiérrez, Ana S. González, Ana I. Jiménez-Ramirez, Yolanda Álvarez, Víctor Vega, Heiko Reith i in. "Exchange Bias Effect of Ni@(NiO,Ni(OH)2) Core/Shell Nanowires Synthesized by Electrochemical Deposition in Nanoporous Alumina Membranes". International Journal of Molecular Sciences 24, nr 8 (11.04.2023): 7036. http://dx.doi.org/10.3390/ijms24087036.

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Tuning and controlling the magnetic properties of nanomaterials is crucial to implement new and reliable technologies based on magnetic hyperthermia, spintronics, or sensors, among others. Despite variations in the alloy composition as well as the realization of several post material fabrication treatments, magnetic heterostructures as ferromagnetic/antiferromagnetic coupled layers have been widely used to modify or generate unidirectional magnetic anisotropies. In this work, a pure electrochemical approach has been used to fabricate core (FM)/shell (AFM) Ni@(NiO,Ni(OH)2) nanowire arrays, avoiding thermal oxidation procedures incompatible with integrative semiconductor technologies. Besides the morphology and compositional characterization of these core/shell nanowires, their peculiar magnetic properties have been studied by temperature dependent (isothermal) hysteresis loops, thermomagnetic curves and FORC analysis, revealing the existence of two different effects derived from Ni nanowires’ surface oxidation over the magnetic performance of the array. First of all, a magnetic hardening of the nanowires along the parallel direction of the applied magnetic field with respect their long axis (easy magnetization axis) has been found. The increase in coercivity, as an effect of surface oxidation, has been observed to be around 17% (43%) at 300 K (50 K). On the other hand, an increasing exchange bias effect on decreasing temperature has been encountered when field cooling (3T) the oxidized Ni@(NiO,Ni(OH)2) nanowires below 100 K along their parallel lengths.

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Naderi, Saeed, Hakimeh Zare, Nima Taghavinia, Azam Irajizad, Mahmoud Aghaei i Mojtaba Panjehpour. "Cadmium telluride quantum dots induce apoptosis in human breast cancer cell lines". Toxicology and Industrial Health 34, nr 5 (28.03.2018): 339–52. http://dx.doi.org/10.1177/0748233718763517.

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Introduction: Semiconductor quantum dots (QDs), especially those containing cadmium, have undergone marked improvements and are now widely used nanomaterials in applicable biological fields. However, great concerns exist regarding their toxicity in biomedical applications. Because of the lack of sufficient data regarding the toxicity mechanism of QDs, this study aimed to evaluate the cytotoxicity of three types of QDs: CdTe QDs, high yield CdTe QDs, and CdTe/CdS core/shell QDs on two human breast cancer cell lines MDA-MB468 and MCF-7. Methods: The breast cancer cells were treated with different concentrations of QDs, and cell viability was evaluated via MTT assay. Hoechst staining was applied for observation of morphological changes due to apoptosis. Apoptotic DNA fragmentation was visualized by the agarose gel electrophoresis assay. Flow cytometric annexin V/propidium iodide (PI) measurement was used for apoptosis detection. Results: A significant decrease in cell viability was observed after QDs treatment ( p < 0.05). Apoptotic bodies and chromatin condensation was observed by Hoechst staining. DNA fragmentation assay demonstrated a DNA ladder profile in the exposed cells and also annexin V/PI flow cytometry confirmed apoptosis in a dose-dependent manner. Conclusion: Our results revealed that CdTe, high yield CdTe, and CdTe/CdS core/shell QDs induce apoptosis in breast cancer cell lines in a dose-dependent manner. This study would help realizing the underlying cytotoxicity mechanism, at least partly, of CdTe QDs and may provide information for the development of nanotoxicology and safe use of biological applications of QDs.

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Reiss, Peter, Myriam Protière i Liang Li. "Core/Shell Semiconductor Nanocrystals". Small 5, nr 2 (20.01.2009): 154–68. http://dx.doi.org/10.1002/smll.200800841.

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Rozprawy doktorskie na temat "Semiconductor-Semiconductor Core Shell Nanomaterials"

Fairclough, Simon Michael. "Carrier dynamics within semiconductor nanocrystals". Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:857f624d-d93d-498d-910b-73cce12c4e0b.

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This thesis explores how the carrier dynamics within semiconductor nanocrystals can be directly engineered through specific core-shell design. Emphasis is placed on how material characteristics, such as strain or alloying at a core-shell interface, can influence the exciton energies and the recombination dynamics within semiconductor nanocrystals. This study synthesises type-II heterojunction ZnTe/ZnSe core-shell nanocrystals via a diethyl zinc-free synthesis method, producing small size distributions and quantum yields as high as 12%. It was found that the 7% lattice mismatch between the core and shell materials places limitations on the range of structures in which coherent growth is achieved. By developing compositional and strained atomistic core-shell models a variety of physical and optical properties could be simulated and has led to a clear picture of the core-shell architecture to be built. This characterisation provides evidence that the low bulk modulus ZnTe cores are compressed by the higher bulk modulus smaller lattice constant ZnSe shells. Further studies show how strain is manifested in structures with 'sharp' core-shell interfaces and how intentional alloying the interface can influence the growth and exciton energies. A (2-6)-band effective mass model was able to distinguish between the as-grown 'sharp' and 'alloyed' interfaces which indicated that strain accentuates the redshift of the excitonic state whilst reduced strain within an alloyed interface sees a reduced redshift. Single nanocrystal spectroscopy investigations of brightly emitting single graded alloyed nanocrystals and of a size series of commercially available CdSe/ZnS nanocrystals showed almost no fluorescence intermittency (nearly 'non-blinking'). These investigations also identified trion recombination as the main mechanism within the blinking 'off' state. Ultimately this thesis adds to the growing understanding of how specific core-shell architectures manipulate the electronic structure and develops techniques to identify specific material characteristics and how these characteristics influence the physical and optical properties within semiconductor nanocrystals.

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Alzahrani, Hanan Yahya S. "Non linear piezoelectricity in wurtzite semiconductor core-shell nanowires : an atomistic modelling approach". Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/non-linear-piezoelectricity-in-wurtzite-semiconductor-coreshell-nanowires-an-atomistic-modelling-approach(b4be879a-b85f-4e58-81d7-79f304baa23d).html.

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Piezotronics is a new field, as first explored by Professor Zhong Lin Wang (Georgia Institute of Technology, Atlanta, USA), which describes the exploitation of the piezoelectric polarization and internal electric field inside semiconductor nanostructures by applying strain, to develop electronic devices with new functionality. Such concepts find applications in both III-V and II-VI semiconductor compounds, in optics, optoelectronics, catalysis, and piezoelectricity, sensors, piezoelectric transducers, transparent conductor and nanogenerators. In this work I explore the strain dependence of the piezoelectric effect in wurtzite ZnO crystals. The Linear and quadratic piezoelectric coefficients of III-V (GaP, InP, GaAs and InAs) wurtzite semiconductors are also calculated using ab-initio density functional theory. The polarization in terms of the internal anion–cation displacement, the ionic and dipole charges is written and the ab initio Density Functional Theory is used to evaluate the dependence of all quantities on the strain tensor. The piezoelectric effect of III–V semiconductors are nonlinear in the strain tensor. The quadratic piezoelectric coefficients and a revised value of the spontaneous polarization are reported. Furthermore, the ZnO nanowires is found to be non-linear piezoelectric effect and leads to predictions in some cases opposite to those obtained using the widely used linear model. The predicted magnitude of such coefficients are much larger than previously reported and of the same order of magnitude as those of III-N semiconductors. We also model the bending distortion created on a III-V wurtzite nanowire by an atomic force microscope tip induced deflection to calculate the piezoelectric properties of both homogenous and core shell structures. A number of combinations of III-V materials for the core and the shell of the nanowires, are shown a favour much increased voltage generation. The largest core voltages in core/shell combinations of InAs/GaP, InP/GaP, GaP/ InAs and GaP/InP are observed which can be theoretically 3 orders of magnitude larger than the typical values of ±3V in homogenous nanowires. Also considering properties such as bandgap discontinuity and mobility, III-V wurtzite core shell nanowires are candidates for high performance components in piezotronics and nanogeneration.

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Guan, Xin. "Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEC057/document.

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L’objectif de cette thèse est de développer un réseau de nanofils GaAs (coeur) / oxyde (coquille) pour la photoélectrolyse de l'eau. Pour cela, la géométrie des nanofils GaAs a été d’abord optimisée en ajustant différents paramètres expérimentaux de la croissance auto-catalysée de ces nanofils par Épitaxie par Jets Moléculaires. Nous avons ensuite étudié systématiquement l'oxydation de surface des nanofils GaAs et son effet négatif sur la croissance de la coquille. Nous avons donc développé une méthode dite d'encapsulation / désencapsulation d'une couche d'arsenic (As) amorphe qui protège les facettes des NFs de l'oxydation. Une étude physico-chimique a montré l'effet bénéfique d'une telle méthode sur la croissance de la coquille. La croissance d'une coquille de SrTiO3 sur des nanofils de GaAs a ensuite été réalisée. Des caractérisations approfondies de la croissance de la coquille de SrTiO3 sur les NFs de GaAs ont été réalisées. La plus grande partie de la structure pérovskite SrTiO3 était en relation d'épitaxie avec le réseau cristallin de GaAs. La dernière partie de cette thèse concerne l’utilisation de tels réseaux de nanofil GaAs / oxyde pour les dispositifs PEC où l'oxyde sert de couche de passivation. L'influence du dopage et de la morphologie des nanofils GaAs a d'abord été étudiée. Les propriétés des réseaux de nanofils de GaAs / SrTiO3 et de GaAs / TiO2 servant de photoélectrodes dans des dispositifs PEC sont étudiées
The objective of this PhD is to develop the network of GaAs (core) / oxide (shell) nanowires for solar water splitting. The geometry of the GaAs nanowires was firstly optimized by adjusting different experimental parameters of the self-catalyzed growth of these nanowires by molecular beam epitaxy. We then systematically studied the surface oxidation of the GaAs nanowires and its negative effect on the growth of the shell. We have therefore developed a method called the arsenic (As) capping / decapping method that protects the facets of nanowires from the oxidation. A physico-chemical study has shown the beneficial effect of such a method on the growth of the shell. The growth of a SrTiO3 shell on GaAs nanowires was then performed. In-depth characterizations of SrTiO3 shell growth on GaAs nanowires were carried out. Most of the SrTiO3 perovskite structure was in epitaxial relationship with the GaAs crystalline lattice. The last part of this thesis concerns the application of such GaAs / oxide nanowire networks to PEC devices where the oxide serves as a passivation layer. The influence of the doping and the morphology of GaAs nanowires was first studied. The properties of GaAs / SrTiO3 and GaAs / TiO2 nanowire networks used as photoelectrodes in PEC devices are finally studied

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Xu, Yang. "Synthesis and Characterization of Silica Coated CdSe/CdS Core/Shell Quantum Dots". Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/29974.

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A great deal of interest has been dawn on the colloidal chemistry based semiconductor nanocrysallites, also known as quantum dots (QDs). Because of the strong quantum confinement, quantum dots have unique size-dependent optical properties, which are much more superior to the conventional organic fluorescence materials. In addition, strong chemical resistant makes inorganic semiconductor QDs ideal candidate for next-generation of bio-labels and drug delivery vehicles. This report presents a user friendly approach to synthesize high quality biocompatible CdSe QDs in aqueous solution. Size of the dots can be controlled by adjusting the temperature, pH of the solution, and ratio of the precursors. A thin CdS layer was grown on CdSe QDs, forming a CdSe/CdS core/shell structure, to improve the photoluminescence. In order to use these QDs in-vivo, a more chemically robust coating, silica, was grown on the core/shell structure QD. The optical properties of the QDs were characterized by absorption and photoluminescence spectra. X-ray diffraction and transmission electron microscopy were conducted to verify the QDs composition and structure.
Ph. D.

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Du, Sichao. "Atom probe microscopy of III-V semiconductor nanowires". Thesis, The University of Sydney, 2013. http://hdl.handle.net/2123/10219.

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Group III-V semiconductor nanowires, showing novel properties, are promising building blocks for future applications. However, characterisation of individual NWs at the atomic level, which remains challenging, is critical to understand the detail growth mechanism. Therefore, this doctoral research aims, to develop a characterisation technique amenable to the specific configuration of a single nanowire, and to apply this technique to understand III-V nanowire growth. First, we developed a unique atom probe microscopy technique for directly measuring pristine nanowires on the growth substrate, which allows avoiding any damage introduced during sample preparation. Both experimental results and electrostatic simulations demonstrate the viability of this measuring approach to image the entire cross-section of a specimen, termed full tip imaging. Second, we characterised the distribution and relative concentration of dopants. The reconstruction parameters were determined based on crystallographic features. Background noises were removed based on multiple detector events. The concentration profile shows the dopants distributing radially inhomogeneous. Third, we investigated the vapour-liquid-solid and vapour-solid growth components in individual ternary InGaAs nanowires. A Ga-enriched core and In-enriched shell structure in the InGaAs nanowire has been found, which can essentially be related to the different growth mechanisms. This doctoral research advanced the atom probe microscopy characterisation of III-V nanowires. It developed a way to measure the pristine nanowire and increased the field-of-view by using the unique specimen preparation method. The atom probe microscopy results offer important compositional and structural information for the understanding of nanowire growth in order to realize applications in the future.

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Bohorquez, Ballen Jaime. "Thermal transport in low dimensional semiconductor nanostructures". OpenSIUC, 2014. https://opensiuc.lib.siu.edu/dissertations/798.

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We have performed a first principles density functional theory (DFT) calculations to study the thermal conductivity in ZnO nanotubes, ZnO nanowires, and Si/Ge shell-core nanowires. We found the equilibrium configuration and the electric band structure of each nanostructure using DFT, the interatomic force constants and the phonon dispersion relations were calculated using DFPT as implemented in Quantum Espresso. In order to fundamentally understand the effect of atomic arrangements, we calculated the phonon conductance in a ballistic approach using a Green's function method. All ZnO nanostructures studied exhibit semiconducting behavior, with direct bandgap at the Gamma point. The calculated values for the bandgaps were larger than the value of the bandgap of the bulk ZnO. We were able to identify phonon modes in which the motion of Zn atoms is significant when it is compared with the motion of oxygen atoms. The thermal conductivity depends on the diameter of the nanowires and nanotubes and it is dramatically affected when the nanowire or nanotube is doped with Ga. For Si/Ge nanowires, the slope and the curvature of acoustic modes in the phonon dispersion relation increases when the diameter increases. For nanowires with the same number of atoms, the slope and curvature of acoustic modes depends on the concentration of Si atoms. We were able to identify phonon modes in which the motion of core atoms is significant when it is compared with motion of atoms on the nanowire's shell. The thermal conductivity in these nanostructures depends on the nanowire's diameter and on the Si atoms concentration.

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Qu, Jiangtao. "Atom-Scale Insights into III-V Semiconductor Nanowires". Thesis, The University of Sydney, 2017. http://hdl.handle.net/2123/17851.

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As the feature size of MOSFET is scaling down to nano-size, series of problems need to be overcome to continue Moore’ Law, which seems an impossible task with traditional bulk Si technology due to the physical limitation and various negative effects being subject to small feature size. The critical issues for both further improving the devices’ performance and lowering their cost lie in the exploration of substitutions for Si and the control of morphological and compositional properties of materials. group III-V nanowires due to its unique properties are considered as the building block for next-generation electronic devices. To fulfill these commercial applications with group III-V nanowires, a fundamental and quantitative understanding of growth-structure-property relationships is central to applications where nanowires exhibit clear advantages. Therefore, this doctoral research systematically investigates three different semiconductor nanowires: Au-seeded, self-seed and planar nanowires, in terms of elemental, morphological and structural aspects by taking advantage of cutting-edge technique atom probe tomography, and endeavor to unveil the correlation between nanowires’ intrinsic properties and performance. Based on the atom probe findings, the growth mechanism of Au-seeded and self-seeded nanowire have been systematically discussed, and new model has been proposed to explain the phenomena on the basis of density functional calculation. Moreover, the doping distribution in planar nanowires has also been carefully investigated, and the results demonstrate that the dopants can diffuse into the substrate which subsequently degrade the device performance due to parasitic channel effect, and accordingly, suggestions have been given to optimize the planar nanowire growth for improved dopant distribution. The outcomes of this project are expected to theoretically support high-quality nanowire synthesis for specific applications.

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Bhatnagar, Mehar. "Semiconductor core-shell and alloy nanoparticles (group iv) for photovoltaics, gas sensing and plasmonic applications". Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8112.

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Girgel, Ionut. "Development of InGaN/GaN core-shell light emitters". Thesis, University of Bath, 2017. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.720648.

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Gallium nitride (GaN) and its related semiconductor alloys are attracting tremendous interest for their wide range of applications in blue and green LEDs, diode lasers, high-temperature and high-power electronics. Nanomaterials such as InGaN/GaN core-shell three-dimensional nanostructures are seen as a breakthrough technology for future solid-state lighting and nano-electronics devices. In a core-shell LED, the active semiconductor layers grown around a GaN core enable control over a wide range of wavelengths and applications. In this thesis the capability for the heteroepitaxial growth of a proof-of-principle core-shell LED is advanced. A design that can be applied at the wafer scale using metalorganic vapor phase epitaxy (MOVPE) crystal growth on highly uniform GaN nanorod (NR) structures is proposed. This project demonstrates understanding over the growth constraints of active layers and dopant layers. The impact of reactor pressure and temperature on the morphology and on the incorporated InN mole fraction was studied for thick InGaN shells on the different GaN crystal facets. Mg doping and effectiveness of the p-n junction for a core-shell structure was studied by extensive growth experiments and characterization. Sapphire and Si substrates were used, and at all the stages of growth and fabrication. The structures were optimized to achieve geometry homogeneity, high-aspect-ratio, incorporation homogeneity for InN and Mg dopant. The three-dimensional nature of NRs and their light emission provided ample challenges which required adaptation of characterization and fabrication techniques for a core-shell device. Finally, an electrically contacted core-shell LED is demonstrated and characterized. Achieving a proof-of-principle core-shell device could be the starting point in the development of nanostructure-based devices and new physics, or in solving technical problems in planar LEDs, such as the polarization of emitted light, the quantum-confined Stark effect, efficiency droop, or the green gap.

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Angell, Joshua James. "SYNTHESIS AND CHARACTERIZATION OF CdSe-ZnS CORE-SHELL QUANTUM DOTS FOR INCREASED QUANTUM YIELD". DigitalCommons@CalPoly, 2011. https://digitalcommons.calpoly.edu/theses/594.

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Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative photoluminescence quantum yield (PLQY) while maintaining a small size dispersion and minimizing the shift in the center wavelength (CWL) of the fluorescence curve. The process that was developed introduced a greater amount of control in the coating procedure than previously available at Cal Poly. Quantum yield was observed to increase with increasing shell thickness until 3 monolayers, after which quantum yield decreased and the likelihood of flocculation of the colloid increased. The quantum yield also increased with increasing Zn:S ratio, possibly indicating that zinc atoms may substitute for missing cadmium atoms at the CdSe surface. The full-width at half-maximum (FWHM) of the fluorescence spectrum did not change more than ±5 nm due to the coating process, indicating that a small size dispersion was maintained. The center wavelength (CWL) of the fluorescence spectrum red shifted less than 35 nm on average, with CWL shifts tending to decrease with increasing Zn:S ratio and larger CdSe particle size. The highest quantum yield was achieved by using a Zn:S ratio of 1.37:1 in the precursor solution and a ZnS shell thickness of approximately 3 monolayers, which had a red shift of less than 30 nm and a change in FWHM of ±3 nm. Photostability increased with ZnS coating as well. Intense UV irradiation over 12 hours caused dissolution of CdSe samples, while ZnS coated samples flocculated but remained fluorescent. Atomic absorption spectroscopy was investigated as a method for determining the thickness of the ZnS shell, and it was concluded that improved sample preparation techniques, such as further purification and complete removal of unreacted precursors, could make this testing method viable for obtaining quantitative results in conjunction with other methods. However, the ZnS coating process is subject to variations due to factors that were not controlled, such as slight variations in temperature, injection speed, and rate and degree of precursor decomposition, resulting in standard deviations in quantum yield of up to half of the mean and flocculation of some samples, indicating a need for as much process control as possible.

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Książki na temat "Semiconductor-Semiconductor Core Shell Nanomaterials"

Gupta, Raju Kumar, i Mrinmoy Misra. Metal Semiconductor Core-Shell Nanostructures for Energy and Environmental Applications. Elsevier, 2017.

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Metal Semiconductor Core-Shell Nanostructures for Energy and Environmental Applications. Elsevier Science & Technology Books, 2017.

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Części książek na temat "Semiconductor-Semiconductor Core Shell Nanomaterials"

Bailey, R. E., i S. Nie. "Core-Shell Semiconductor Nanocrystals for Biological Labeling". W The Chemistry of Nanomaterials, 405–17. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2005. http://dx.doi.org/10.1002/352760247x.ch12.

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Bayal, Manikanta, Neeli Chandran, Rajendra Pilankatta i Swapna S. Nair. "Semiconductor Quantum Dots and Core Shell Systems for High Contrast Cellular/Bio Imaging". W Nanomaterials for Luminescent Devices, Sensors, and Bio-imaging Applications, 27–38. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5367-4_3.

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Hazra, Purnima, i S. Jit. "Electrical Characteristics of Si/ZnO Core–Shell Nanowire Heterojunction Diode". W Physics of Semiconductor Devices, 673–75. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_173.

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Mehta, Aarti, Shailesh N. Sharma, Kanchan Sharma, Parth Vashishtha i S. Chand. "Single-Pot Rapid Synthesis of Colloidal Core/Core-Shell Quantum Dots: A Novel Polymer-Nanocrystal Hybrid Material". W Physics of Semiconductor Devices, 315–18. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_79.

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Yadav, Amar Nath, Ashwani Kumar Singh i Kedar Singh. "Synthesis, Properties, and Applications of II–VI Semiconductor Core/Shell Quantum Dots". W Core/Shell Quantum Dots, 1–28. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46596-4_1.

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Ozel, Tuncay. "Hybrid Semiconductor Core-Shell Nanowires with Tunable Plasmonic Nanoantennas". W Coaxial Lithography, 27–41. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45414-6_3.

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Sharma, Shailja, Babita Kumari, Nirupama Singh, Anuradha Verma, Vibha R. Satsangi, Sahab Dass i Rohit Shrivastav. "Synthesis and Characterization of CuO-TiO2 Core Shell Nanocomposites for Hydrogen Generation Via Photoelectrochemical Splitting of Water". W Physics of Semiconductor Devices, 729–32. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_188.

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Patil, Padmashri. "Thermal Sintering Improves the Short Circuit Current of Solar Cells Sensitized with CdTe/CdSe Core/Shell Nanocrystals". W Physics of Semiconductor Devices, 343–46. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_86.

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Nagar, Rupali, i Bhaghavathi P. Vinayan. "Metal-semiconductor core–shell nanomaterials for energy applications". W Metal Semiconductor Core-Shell Nanostructures for Energy and Environmental Applications, 99–132. Elsevier, 2017. http://dx.doi.org/10.1016/b978-0-323-44922-9.00005-3.

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Nayak, Manoj K., Jaswant Singh, Baljit Singh, Shilpa Soni, Vidhu S. Pandey i Sachin Tyagi. "Introduction to semiconductor nanomaterial and its optical and electronics properties". W Metal Semiconductor Core-Shell Nanostructures for Energy and Environmental Applications, 1–33. Elsevier, 2017. http://dx.doi.org/10.1016/b978-0-323-44922-9.00001-6.

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Streszczenia konferencji na temat "Semiconductor-Semiconductor Core Shell Nanomaterials"

Kang, Ki Moon, Hyo-Won Kim, Il-Wun Shim i Ho-Young Kwak. "Syntheses of Specialty Nanomaterials at the Multibubble Sonoluminescence Condition". W ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-68320.

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Streszczenie:

In recent years, a large number of nano-size semiconductors have been investigated for their potential applications in photovoltaic cells, optical sensor devices, and photocatalysts [1, 2, 3]. Nano-size semiconductor particles have many interesting properties due mainly to their size-dependent electronic and optical properties. Appropriately, many speciality of nanomaterials such as CdS and ZnS semiconductor particles, and other metal oxides such as ZnO and lithium-titanate oxide (LTO) have been prepared. However, most of them were prepared with toxic reactants and/or complex multistep reaction processes. Particularly, it is quite difficult to produce LTO nanoparticles, since it typically requires wearisome conditions such as very high temperature over 1000 °C, long producing times, and so on. To overcome such problems, various core/shell type nanocrystals were prepared through different methods such as the hydrothermal synthetic method, microwave, and sonochemistry. Also many coating methods on inorganic oxide nanoparticles were tried for the preparations of various core-shell type nanocrystals. Sonoluminescence (SL) is a light emission phenomenon associated with the catastrophic collapse of a gas bubble oscillating under an ultrasonic field [4]. Light emission of single bubble sonoluminescence (SBSL) is characterized by picosecond flashes of the broad band spectrum extending to the ultraviolet [5, 6]. The bubble wall acceleration has been found to exceed 1011 g at the moment of bubble collapse. Recently observed results of the peak temperature and pressure from the sonoluminescing gas bubble in sulfuric acid solutions [9] were accurately predicted by the hydrodynamic theory for sonoluminescence phenomena [7, 10, 11, 12], which provides a clue for understanding sonochemical reactions inside the bubble and liquid layer adjacent to the bubble wall. Sonochemistry involves an application of sonoluminescence. The intense local heating and high pressure inside the bubbles and liquid adjacent bubble wall from such collapse can give rise to unusual effects in chemical reactions. The estimated temperature and pressure in the liquid zone around the collapsing bubble with equilibrium radius 5 μm, an average radius of bubbles generated in a sonochemical reactor at a driving frequency of 20 kHz with an input power of 179 W, is about 1000 °C and 500 atm, respectively. At the proper condition, a lot of transient bubbles are generated and collapse synchronistically to emit blue light when high power ultrasound is applied to liquid, and it is called multibubble sonoluminescence (MBSL). Figure 1 shows an experimental apparatus for MBSL with a cylindrical quartz cell, into which a 5 mm diameter titanium horn (Misonix XL2020, USA) is inserted [13]. The MBSL facilitates the transient supercritical state [14].in the liquid layer where rapid chemical reactions can take place. In fact, methylene blue (MB), which is one of a number of typical textile dyestuffs, was degraded very fast at the MBSL condition while MB does not degrade under simple ultrasonic irradiation [13]. MBSL has been proven to be a useful technique to make novel materials with unusual properties. In our study, various metal oxides such as ZnO powder [15], used as a primary reinforcing filler for elastomer, homogeneous Li4Ti5O12 nanoparticles [16], used for electrode materials, and core/shell nanoparticles such as CdS coating on TiO2 nanoparticles [17] and ZnS coating on TiO2 nanoparticles [18], which are very likely to be useful for the development of inorganic dye-sensitized solar cells, were synthesized through a one pot reaction under the MBSL condition. Figure 2 shows the XRD pattern of ZnO nanoparticles synthesized from zinc acetate dehydrate (Zn(CH3CO2)2 · 2H2O, 99.999%, Aldrich) in various alcohol solutions with sodium hydroxide (NaOH, 99.99%, Aldrich) at the MBSL condition. The XRD patterns of all powers indicate hexagonal zincite. The XRD pattern for the ZnO nanoparticles synthesized is similar to the ZnO powder produced by a modified sol-gel process and subsequent heat treatment at about 600 °C [19] as shown in Fig.3. The average particle diameter of ZnO powder is about 7 nm. A simple sonochemical method for producing homogeneous LTO nanoparticles, as shown schematically in Fig. 4. First, LiOH and TiO2 nanoparticles were used to prepare LiOH-coated TiO2 nanoparticles as shown in Fig.5. Second, the resulting nanoparticles were thermally treated at 500 °C for 1 hour to prepare LTO nanoparticles. Figure 6 shows a high resolution transmission electron microscope image of LTO nanoparticles having an average grain size of 30–40 nm. All the nanoparticle synthesized are very pure in phase and quite homogeneous in their size and shape. Recently we succeeded in synthesizing a supported nickel catalyst such as Ni/Al2sO3, MgO/Al2O3 and LaAlO3, which turned out to be effective for methane decomposition [20]. Sonochemistry may provide a new way to more rapidly synthesize many specialty nanoparticles with less waste [21]. This clean technology enables the preparation of new materials such as colloids, amorphous particles [22], and various alloys.

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Lepsa, Mihail Ion, Gunjan Nagda, Pujitha Perla, Nataliya Demarina i Detlev Grutzmacher. "InAs/GaSb Core-Shell Nanowires: Growth and Characterization". W 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819061.

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Fust, Sergej, Jonathan Becker, Damon James Carrad, Dominik Irber, Jakob Seidl, Anton Faustmann, Bernhard Loitsch, Gerhard Abstreiter, Jonathan James Finley i Gregor Koblmueller. "Thermoelectric Transport in GaAs-AIGaAs Core-Shell Modulation-Doped Nanowires". W 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819095.

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Liborius, Lisa, Jan Bieniek, Andreas Nagelein, Franz-Josef Tegude, Artur Poloczek i Nils Weimann. "n-doped InGaP Nanowire Shells in Core-Shell pn-junctions". W 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819134.

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Raj, Vidur, Kaushal Vora, Lily Li, Lan Fu, Hark Hoe Tan i Chennupati Jagadish. "Electron selective contact for high efficiency core-shell nanowire solar cell". W 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819194.

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Ding, K., R. B. Liu, H. Wang, M. T. Hill, R. Notzel, M. K. Smit i C. Z. Ning. "Semiconductor-metal core-shell plasmonic nanolasers: Recent experimental results". W 2010 IEEE Photonics Society Winter Topicals Meeting. IEEE, 2010. http://dx.doi.org/10.1109/photwtm.2010.5421947.

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Pavlichenko, Ivan A. "Plasmon resonances of spherical semiconductor-metal core-shell nanostructure". W 2022 Days on Diffraction (DD). IEEE, 2022. http://dx.doi.org/10.1109/dd55230.2022.9961018.

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Zellekens, P., R. Deacon, S. Schlor, P. Perla, P. Liebisch, B. Bennemann, M. Lepsa i in. "Towards semiconductor-superconductor hybrid qubits based on InAs/Al core/shell nanowires". W 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819062.

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Deppner, Marcus, Friedhard Romer, Bernd Witzigmann, Johannes Ledig, Richard Neumann, Andreas Waag, Werner Bergbauer i Martin Strassburg. "Computational study of carrier injection in III-nitride core-shell nanowire-LEDs". W 2011 Semiconductor Conference Dresden (SCD). IEEE, 2011. http://dx.doi.org/10.1109/scd.2011.6068745.

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Novak, J., M. Mikulics, P. Elias, S. Hasenohrl, A. Dujavova-Laurencikova, I. Vavra, I. Novotny i J. Kovac. "Photoluminescence of single GaP/ZnO core-shell nanowires". W 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2012. http://dx.doi.org/10.1109/asdam.2012.6418584.

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