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Gotowa bibliografia na temat „Semiconductor Properties of ZnO”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Semiconductor Properties of ZnO"

Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira i in. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices". Materials Science Forum 514-516 (maj 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

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Di Trolio, Antonio, Alberto M. Testa i Aldo Amore Bonapasta. "Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO". Nanomaterials 12, nr 9 (1.05.2022): 1525. http://dx.doi.org/10.3390/nano12091525.

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ZnO is a well-known semiconducting material showing a wide bandgap and an n-type intrinsic behavior of high interest in applications such as transparent electronics, piezoelectricity, optoelectronics, and photovoltaics. This semiconductor becomes even more attractive when doped with a few atomic percent of a transition metal. Indeed, e.g., the introduction of substitutional Co atoms in ZnO (ZCO) induces the appearance of room temperature ferromagnetism (RT-FM) and magneto-optical effects, making this material one of the most important representatives of so-called dilute magnetic semiconductors (DMSs). In the present review, we discuss the magnetic and magneto-optical properties of Co-doped ZnO thin films by considering also the significant improvements in the properties induced by post-growth irradiation with atomic hydrogen. We also show how all of these properties can be accounted for by a theoretical model based on the formation of Co-VO (oxygen vacancy) complexes and the concurrent presence of shallow donor defects, thus giving a sound support to this model to explain the RT-FM in ZCO DMSs.

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Amananti, Wilda, Riky Ardiyanto, Heri Sutanto, Iis Nurhasanah i Inur Tivani. "Analysis of the optical properties of ZnO thin films deposited on a glass substrate by the So-gel method". Journal of Natural Sciences and Mathematics Research 8, nr 1 (27.06.2022): 52–58. http://dx.doi.org/10.21580/jnsmr.2022.8.1.9623.

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Zinc oxide (ZnO) has attracted the attention of researchers as a photocatalyst material, because ZnO has a wide direct band gap (3.37 eV) and is a semiconductor material with a large excitation binding energy (60 meV). ZnO is a photocatalyst that has many advantages, namely cheap, non-toxic, and theoretically very active under UV irradiation. The most interesting thing about ZnO semiconductor compared to other semiconductors is that ZnO can absorb most of the solar spectrum. However, there is a weakness of the ZnO semiconductor, namely the very fast recombination of charge carriers and the ZnO semiconductor has a low efficiency in the visible region which causes the ZnO semiconductor to have a wide band gap. that is the weakness of ZnO. it is necessary to choose the right method to overcome this deficiency of ZnO. one way that can be done is to increase the photocatalytic ability of zinc oxide, it is necessary to develop it in the manufacture of thin films. The method used in the manufacture of Thin Film is using the sol-gel spray coating method. the first stage is through the manufacture of ZnO precursors by dissolving zinc acetate dehydrate with isopropanol solvent through stirring. then the second stage by adding Monoethanolamine. This stirring lasted for 30 minutes at a temperature of 70°C, the precursor concentration was prepared with three different concentrations which included concentrations of 0.1, 0.3, and 0.5 M. ZnO precursor deposited on the substrate glass is blown at 400 °C. Optical properties are carried out by recording the transmittance and absorbance which are affected by increasing concentrations. The optical transmission spectra show that the transmission increases with decreasing concentration and the maximum transmission in the visible region is about 90% for ZnO thin films prepared with 0.1 M. The optical band gap value produced by the thin film of 0.1 M precursor concentration resulted in an energy band gap of 3.11 eV; thin films of 0.3 M precursor concentration produced an energy band gap of 3.07 eV; and thin film of 0.5M precursor concentration produced an energy band gap of 3.06 eV.©2022 JNSMR UIN Walisongo. All rights reserved.

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Bakranova, Dina, Bekbolat Seitov i Nurlan Bakranov. "Preparation and Photocatalytic/Photoelectrochemical Investigation of 2D ZnO/CdS Nanocomposites". ChemEngineering 6, nr 6 (9.11.2022): 87. http://dx.doi.org/10.3390/chemengineering6060087.

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Properties of heterotructured semiconductors based on ZnO/CdS nanosheets are investigated for their possible application in photocatalytic and photoelectrochemical reactions. Semiconductor material is the main active coating of photoanodes, which triggers the half-reaction of water oxidation and reduction, which entails the purifying or splitting of water. This article explains nanocomposite assembly by convenient and simple methods. The study of the physicochemical properties of semiconductor layers is carried out using electron microscopy, X-ray diffractometry, and UV-visible spectroscopy. Studies of electrochemical properties are carried out by potential static methods in electrochemical cells.

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Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern i Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures". Materials 12, nr 14 (12.07.2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

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Kobayashi, Masakazu, Masanobu Izaki, Pei Loon Khoo, Tsutomu Shinagawa, Akihisa Takeuchi i Kentaro Uesugi. "High-Resolution Mapping of Local Photoluminescence Properties in CuO/Cu2O Semiconductor Bi-Layers by Using Synchrotron Radiation". Materials 14, nr 19 (25.09.2021): 5570. http://dx.doi.org/10.3390/ma14195570.

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The quality of a semiconductor, which strongly affects its performance, can be estimated by its photoluminescence, which closely relates to the defect and impurity energy levels. In light of this, it is necessary to have a measurement method for photoluminescence properties with spatial resolution at the sub-micron or nanoscale. In this study, a mapping method for local photoluminescence properties was developed using a focused synchrotron radiation X-ray beam to evaluate localized photoluminescence in bi-layered semiconductors. CuO/Cu2O/ZnO semiconductors were prepared on F:SnO2/soda-lime glass substrates by means of electrodeposition. The synchrotron radiation experiment was conducted at the beamline 20XU in the Japanese synchrotron radiation facility, SPring-8. By mounting the high-sensitivity spectrum analyzer near the edge of the CuO/Cu2O/ZnO devices, luminescence maps of the semiconductor were obtained with unit sizes of 0.3 μm × 0.3 μm. The devices were scanned in 2D. Light emission 2D maps were created by classifying the obtained spectra based on emission energy already reported by M. Izaki, et al. Band-like structures corresponding to the stacking layers of CuO/Cu2O/ZnO were visualized. The intensities of emissions at different energies at each position can be associated with localized photovoltaic properties. This result suggests the validity of the method for investigation of localized photoluminescence related to the semiconductor quality.

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Shu, Xinpeng. "Research on Photoelectric Properties of ZnO-based Semiconductor Material". Journal of Physics: Conference Series 2541, nr 1 (1.07.2023): 012060. http://dx.doi.org/10.1088/1742-6596/2541/1/012060.

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Abstract In recent years, many semiconductor materials have been applied to the photocatalysis technology. As a semiconductor with wide band gap (3.37 eV), ZnO has received extensive attention in the photocatalytic degradation of organic pollutants due to its rich morphology, low cost and other advantages. However, due to the wide band gap of ZnO, it can only absorb ultraviolet light (accounting for about 4% of the whole solar spectrum), which has greatly limited the application of ZnO semiconductor materials. BiOI/ZnO binary complexes were synthesized by simple hydrothermal and solvothermal methods. Their phenol degradation activities were tested under different light sources. The mechanism of photocatalytic degradation of phenol was reasonably explained by free radical trapping experiment, surface photovoltage, transient photovoltage, fluorescence and other tests.

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Song, Yixiao, Jingwen Qin, Lei Li, Naveed Mushtaq, M. A. K. Yousaf Shah i Jun Xie. "Introducing Fuel Cell Application Using Sodium Vacancies in Hexagonal Wurtzite Structured ZnO Nanorods for Developing Proton–Ion Conductivity". Crystals 12, nr 11 (9.11.2022): 1594. http://dx.doi.org/10.3390/cryst12111594.

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Zinc oxide, a direct band gap semiconductor of ≥3.30 eV, is prevalent in potential requests for energy devices. The early-stage demonstration of ZnO provides a new method of developing high ionic conductivity in multifunctional semiconductors for electrolyte applications in ceramic fuel cells (CFCs). In the present work, we successfully synthesized Na-doped ZnO nanorods by a hydrothermal method and employed them as an electrolyte in CFCs. The synthesized Na-doped-ZnO nanorods showed an effective ionic conductivity of 8.75 × 10−2 S cm−1 along with an excellent power density of 609 mWcm−2 ± 5% when the fuel cell was operating at 550 °C. The enhanced ionic conductivity could be due to Na+ doping into Zn2+ and the high ionic radius of Na ions producing bulk oxygen vacancies in the ZnO structure to conduct oxygen ions or protons. Furthermore, we used experimental analysis, such as X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), ultraviolet–visible (UV–visible), X-ray photoelectron spectroscopy (XPS), and electrochemical impedance spectroscopy (EIS), to evaluate the change in structural properties and mechanism of ionic transport in ZnO nanorods with sodium doping. The presented work provides insight into a novel approach of developing the high ionic conductivity of electrolytes in a low-cost ZnO semiconductor material.

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Foo, K. L., U. Hashim, Chun Hong Voon i M. Kashif. "Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods". Advanced Materials Research 1109 (czerwiec 2015): 104–7. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.104.

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ZnO nanorods, type of the metal-oxide semiconductor deposited on interdigitated electrode (IDE) substrate using hydrothermal growth technique. The growth ZnO nanorods was annealed in furnace at 500°C for 2 hours as to obtain highly crystallite of ZnO nanorods. XRD pattern indicated the synthesized ZnO nanorods have preferred orientation along the (002) plane. Moreover, FESEM images showed that the nanorods with the size less than 60 nanometer were successfully synthesized using hydrothermal growth technique. The investigation on optical properties using UV-Vis-NIR spectrophotometer confirmed ZnO is classified as a wide band gap semiconductor material. Furthermore, the growth ZnO nanorods which undergo electrical properties testing using dielectric analyzer and source meter show that the ZnO nanorods demonstrated rectifying behaviour.

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Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong i Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering". Journal of Nanoscience and Nanotechnology 8, nr 9 (1.09.2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

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Rozprawy doktorskie na temat "Semiconductor Properties of ZnO"

Lee, William (Chun-To). "Harvesting Philosopher's Wool: A Study in the Growth, Structure and Optoelectrical Behaviour of Epitaxial ZnO". Thesis, University of Canterbury. Electrical and Computer Engineering, 2008. http://hdl.handle.net/10092/2507.

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This thesis is about the growth of ZnO thin films for optoelectronic applications. ZnO thin films were grown using plasma assisted molecular beam epitaxy and were studied using various conventional and novel characterisation techniques. The significance of different growth variables on growth efficiency was investigated. The growth rate of ZnO films was found to be linearly dependent on the Zn flux under O-rich growth conditions. Under Zn-rich conditions, the growth rate was dependent on both atomic and molecular oxygen flux. By characterising the oxygen plasma generated using different RF power and aperture plate designs and correlating the results with the growth rates observed, it was found that atomic oxygen was the dominant growth species under all conditions. Molecular oxygen also participated in the growth process, with its importance dependent on the aperture plate design. In addition, an increase in growth temperature was found to monotonically decrease the growth rate. A growth rate of 1.4 Å/s was achieved at a growth temperature of 650 ℃ by using an oxygen flow rate of 1.6 standard cubic centimetres utilising a plasma source with a 276 hole plate operating at 400 W, and a Zn flux 1.4✕10¹⁵ atoms/cm²⋅s. Characterisation of the MBE grown thin films revealed that the qualities of ZnO thin films were dependent on the growth conditions. Experimental evidence suggested that a maximum adatom diffusion rate can be achieved under Zn-rich conditions, giving samples with the best structural quality. O-rich conditions in general led to statistical roughening which resulted in rough and irregular film surfaces. Experimental results also suggested that by increasing the atomic oxygen content and decreasing the ion content of the plasma, the excitonic emission of the ZnO thin films can possibly be improved. It was also found that the conductivity of the films can possibly be reduced by increasing the plasma ion content. By investigating the evolution of the buffer layer surface during the early stages of growth, dislocation nucleation and surface roughening were found to be important strain relief mechanisms in MBE grown ZnO thin films that affected the crystal quality. The usage of LT-buffer layers was found to improve substrate wetting, and was shown to significantly reduce dislocation propagation. Further strain reduction was achieved via the application of a 1 nm MgO buffer layer, and a significant reduction of carrier concentration and improvement in optical quality was subsequently observed. A carrier concentration of <1✕10¹⁶ cm⁻³ and a near band emission full width half maximum of 2 meV was observed for the best sample. The study of electrical characteristics using the variable magnetic field Hall effect confirmed the existence of a degenerate carrier and a bulk carrier in most MBE grown ZnO thin films. The bulk carrier mobility was measured to be ~120 - 150 cm²/Vs for most as-grown samples, comparable to the best reported value. A typical bulk carrier concentration of ~1✕10¹⁶ - 1✕10¹⁸ cm⁻³ was observed for as-grown samples. Annealing was found to increase the mobility of the bulk carrier to ~120 - 225 cm²/Vs and decrease the bulk carrier concentration by two orders of magnitude. Using time resolved photoluminescence, it was found that the radiative recombination in MBE grown ZnO thin films was dominated by excitonic processes, and followed a T³⁄² trend with temperature. A maximum radiative lifetime of 10 ns was observed for as-grown samples. The non-radiative lifetime in ZnO thin films was dominated by the Shockley-Read-Hall recombination processes. The modelling of the temperature dependence of the non-radiative lifetime suggested that an electron trap at ~0.065 eV and a hole trap at ~0.1 eV may be present in these samples. The application of time resolved photoluminescence also allowed the direct observation of carrier freeze-out in these ZnO films at low temperature.

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Yang, Li Li. "Synthesis and Characterization of ZnO Nanostructures". Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-60815.

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One-dimensional ZnO nanostructures have great potential applications in the fields of optoelectronic and sensor devices. Therefore, it is very important to realize the controllable growth of one-dimensional ZnO nanostructures and investigate their properties. The main points for this thesis are not only to successfully realize the controllable growth of ZnO nanorods (ZNRs), ZnO nanotubes (ZNTs) and ZnMgO/ZnO heterostructures, but also investigate the structure and optical properties in detail by means of scanning electron microscope (SEM), transmission electron microscope (TEM), resonant Raman spectroscopy (RRS), photoluminescence (PL), time resolved PL (TRPL), X-ray photoelectron spectroscopy (XPS) and Secondary ion mass spectrometry (SIMS). For ZNRs, on one hand, ZNRs have been successfully synthesized by a two-step chemical bath deposition method on Si substrates. The diameter of ZNRs can be well controlled from 150 nm to 40 nm through adjusting the diameter and density of the ZnO nanoparticles pretreated on the Si substrates. The experimental results indicated that both diameter and density of ZnO nanoparticles on the substrates determined the diameter of ZNRs. But when the density is higher than the critical value of 2.3×108cm-2, the density will become the dominant factor to determine the diameter of ZNRs. One the other hand, the surface recombination of ZNRs has been investigated in detail. Raman, RRS and PL results help us reveal that the surface defects play a significant role in the as-grown sample. It is the first time to the best of our knowledge that the Raman measurements can be used to monitor the change of surface defects and deep level defects in the CBD grown ZNRs. Then we utilized TRPL technique, for the first time, to investigate the CBD grown ZNRs with different diameters. The results show that the decay time of the excitons in ZNRs strongly depends on the diameter. The altered decay time is mainly due to the surface recombination process. A thermal treatment under 500°C can strongly suppress the surface recombination channel. A simple carrier and exciton diffusion equation is also used to determine the surface recombination velocity, which results in a value between 1.5 and 4.5 nm/ps. Subsequently, we utilized XPS technique to investigate the surface composition of as-grown and annealed ZNRs so that we can identify the surface recombination centers. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Finally, on the basis of results above, we explored an effective way, i.e. sealing the beaker during the growth process, to effectively suppress the surface recombination of ZNRs and the suppression effect is even better than a 500oC post-thermal treatment. For ZNTs, the structural and optical properties have been studied in detail. ZNTs have been successfully evolved from ZNRs by a simple chemical etching process. Both temperature-dependent PL and TRPL results not only further testify the coexistence of spatially indirect and direct transitions due to the surface band bending, but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their strong enhancement of luminescence intensity. For ZnMgO/ZnO heterostructures, the Zn0.94Mg0.06O/ZnO heterostructures have been deposited on 2 inch sapphire wafer by metal organic chemical vapor deposition (MOCVD) equipment. PL mapping demonstrates that Mg distribution in the entire wafer is quite uniform with average concentration of ~6%. The annealing effects on the Mg diffusion behaviors in Zn0.94Mg0.06O/ZnO heterostructures have been investigated by SIMS in detail. All the SIMS depth profiles of Mg element have been fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn0.94Mg0.06O layer deposited at 700 oC is two orders of magnitude lower than that of annealing samples, which clearly testifies that the deposited temperature of 700 oC is much more beneficial to grow ZnMgO/ZnO heterostructures or quantum wells. This thesis not only provides the effective way to fabricate ZNRs, ZNTs and ZnMgO/ZnO heterostructures, but also obtains some beneficial results in aspects of their optical properties, which builds theoretical and experimental foundation for much better understanding fundamental physics and broader applications of low-dimensional ZnO and related structures.
Endimensionella nanostrukturer av ZnO har stora potentiella tillämpningar för optoelektroniska komponenter och sensorer. Huvudresultaten för denna avhandling är inte bara att vi framgångsrikt har realiserat med en kontrollerbar metod ZnO nanotrådar (ZNRs), ZnO nanotuber (ZNTs) och ZnMgO/ZnO heterostrukturer, utan vi har också undersökt deras struktur och optiska egenskaper i detalj. För ZNRs har diametern blivit välkontrollerad från 150 nm ner till 40 nm. Den storlekskontrollerande mekanismen är i huvudsak relaterad till tätheten av ZnO partiklarna som är fördeponerade på substratet. De optiska mätningarna ger upplysning om att ytrekombinationsprocessen spelar en betydande roll för tillväxten av ZNR. En värmebehandling i efterhand vid 500 grader Celsius eller användande av en förseglad glasbägare under tillväxtprocessen kan starkt hålla nere kanalerna för ytrekombinationen.För ZNT, dokumenterar vi inte bara samexistensen av rumsliga indirekta och direkta övergångar på grund av bandböjning, men vi konstaterar också att vi har mindre icke-strålande bidrag till den optiska emissionsprocessen i ZNT. För ZnMgO/ZnO heterostrukturer konstaterar vi med hjälp av analys av Mg diffusionen i den växta och den i efterhand uppvärmda Zn(0.94)Mg(0.06)O filmen, att en tillväxt vid 700 grader Celsius är den mest lämpliga för att växa ZnMgO/ZnO heterostrukturer eller kvantbrunnar. Denna avhandling ger en teoretisk och experimentell grund för bättre förståelse av grundläggande fysik och för tillämpningar av lågdimensionella strukturer.
SSF, VR

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Li, Yun. "First Principle Calculations of the Structure and Electronic Properties of Pentacene Based Organic and ZnO Based Inorganic Semiconducting Materials". Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc115112/.

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In this thesis, I utilize first principles density functional theory (DFT) based calculations to investigate the structure and electronic properties including charge transfer behaviors and work function of two types of materials: pentacene based organic semiconductors and ZnO transparent conducting oxides, with an aim to search for high mobility n-type organic semiconductors and fine tuning work functions of ZnO through surface modifications. Based on DFT calculations of numerous structure combinations, I proposed a pentacene and perfluoro-pentacene alternating hybrid structures as a new type of n-type semiconductor. Based on the DFT calculations and Marcus charge transfer theory analysis, the new structure has high charge mobility and can be a promising new n-type organic semiconductor material. DFT calculations have been used to systematically investigate the effect of surface organic absorbate and surface defects on the work function of ZnO. It was found that increasing surface coverage of organic groups and decreasing surface defects lead to decrease of work functions, in excellent agreement with experimental results. First principles based calculations thus can greatly contribute to the investigating and designing of new electronic materials.

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Schwarz, Casey Minna. "Radiation Effects on Wide Band Gap Semiconductor Transport Properties". Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5488.

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In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as it was subjected to increasing temperature as well as continuous electron irradiation. The near-band-edge (NBE) intensity in CL measurements was found to decay as a function of temperature and electron irradiation due to an increase in carrier lifetime. Electron injection through application of a forward bias also resulted in a similar increase of minority carrier diffusion length. Thermal and electron irradiation dependences were used to determine activation energies for the irradiation induced effects. This helps to further our understanding of the electron injection mechanism as well as to identify possible defects responsible for the observed effects. Thermal activation energies likely represent carrier delocalization energy and are related to the increase of diffusion length due to the reduction in recombination efficiency. The effect of electron irradiation on the minority carrier diffusion length and lifetime can be attributed to the trapping of non-equilibrium electrons on neutral acceptor levels. The effect of neutron irradiation on CL intensity can be attributed to an increase in shallow donor concentration. Thermal activation energies resulting from an increase in L or decay of CL intensity monitored through EBIC and CL measurements for p-type Sb doped ZnO were found to be the range of Ea = 112 to 145 meV. P-type Sb doped ZnO nanowires under the influence of temperature and electron injection either through continuous beam impacting or through forward bias, displayed an increase in L and corresponding decay of CL intensity when observed by EBIC or CL measurements. These measurements led to activation energies for the effect ranging from Ea = 217 to 233 meV. These values indicate the possible involvement of a SbZn-2VZn acceptor complex. For N-type unintentionally doped ZnO, CL measurements under the influence of temperature and electron irradiation by continuous beam impacting led to a decrease in CL intensity which resulted in an electron irradiation activation energy of approximately Ea = 259 meV. This value came close to the defect energy level of the zinc interstitial. CL measurements of neutron irradiated ZnO nanostructures revealed that intensity is redistributed in favor of the NBE transition indicating an increase of shallow donor concentration. With annealing contributing to the improvement of crystallinity, a decrease can be seen in the CL intensity due to the increase in majority carrier lifetime. Low energy emission seen from CL spectra can be due to oxygen vacancies and as an indicator of radiation defects.
ID: 031001520; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Advisers: Elena Flitsiyan, Leonid Chernyak.; Title from PDF title page (viewed August 19, 2013).; Thesis (Ph.D.)--University of Central Florida, 2012.; Includes bibliographical references (p. 104-109).
Ph.D.
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Mahmood, Farkhund Shakeel. "Electrical and optical properties of RF sputtered ZnO thin films". Thesis, Keele University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.297202.

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Koch, Sandro. "Electrical and optical properties of hydrogen-related complexes and their interplay in ZnO". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-187905.

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The commercial breakthrough of ZnO-based devices is hampered mainly by the unipolar n-type conductivity of this material. Hydrogen, which is known to form both electrically active and inactive complexes in ZnO, is considered as a main cause of this behavior. However, the existing literature is incomplete and partly contradictory. The object of the present thesis is a comprehensive investigation of the properties of two hydrogen-induced shallow donors HBC and HO, the hydrogen molecule H2, and a hydrogen-related defect, which gives rise to local vibrational modes (LVMs) at 3303 and 3320 cm-1, in ZnO and their interaction. The defects are characterized by Raman spectroscopy, infrared absorption spectroscopy, photoconductivtity (PC) and photoluminescence measurements. Based on the PC technique, a novel and highly sensitive spectroscopic approach is established, which is applicable for probing LVMs in strongly absorbing spectral regions. This technique enables the detection of the local modes of HO at 742 and 792 cm-1 in the neutral charge state. In consequence, earlier theoretical predictions regarding the microscopic structure of this shallow donor can be verified. In Raman measurements the electronic 1s→2s transition of HO is identified at 273 cm-1. This quantity is found to blue-shift with the HO defect concentration. A similar blue-shift of the 1s→2s(2p) donor transition of HBC is assigned to local lattice strain which was generated during high temperature processes. A Raman study of the H2 molecule covers its formation, stability, lattice position and interplay with the ZnO host. In particular, the role of H2 for the continuous generation of HO and HBC and the related n-type behavior is elaborated. The analysis unambiguously confirms that the so-called “hidden hydrogen” species is indeed H2. Moreover, the observation of the ortho-para-conversion process and the coupling to the host phonons contribute to a general understanding of H2 in semiconductors. Experimental results of the LVMs of 3303 and 3320 cm-1 in conjunction with model calculations yield an underlying defect containing three hydrogen atoms. This complex Y–H3 exhibits two configurations, which differ only in the orientation of one chemical bond. The findings are consistent equally with a zinc vacancy decorated with three hydrogen atoms and an ammonia molecule, respectively. Earlier models proposed in the literature are discarded. Measurements of concentration profiles by using Raman spectroscopy reveal the local distribution of the hydrogen-related defects as well as lattice imperfections. At the surface, where oxygen vacancies are present, HO is identified as the dominant shallow donor. Below, in parts of the crystal with low damage, HBC is the prevalent defect. In the sample center, characterized by a significant amount of zinc vacancies, the concentrations of H2 and Y–H3 show their maxima. By recording concentration profiles after thermal treatments a spatially resolved investigation of the interplay of these hydrogen-related defects is possible
Der kommerzielle Durchbruch von ZnO-basierten Bauelementen ist hauptsächlich durch die beständige n-Typ Leitung des Materials eingeschränkt. Wasserstoff, der sowohl elektrisch aktive als auch inaktive Komplexe in ZnO formt, gilt als ein Hauptverursacher dieses Verhaltens. Jedoch ist die bestehende Literatur zu derartigen Defekten unvollständig, teils auch widersprüchlich. Gegenstand der vorliegenden Arbeit sind umfassende Untersuchungen der beiden wasserstoffinduzierten Donatoren HBC und HO, des Wasserstoffmoleküls H2 und eines Wasserstoffdefekts mit lokalen Schwingungsmoden (LSMn) bei 3303 und 3320 cm-1 in ZnO hinsichtlich ihrer Eigenschaften und gegenseitigen Wechselwirkung. Die Charakterisierung der Komplexe erfolgt mit Hilfe von Raman-Spektroskopie, Infrarot-Absorptionsspektroskopie, Photoleitfähigkeits- (PC) und Photolumineszenzmessungen. Basierend auf der PC Technik wird eine neuartige, hochsensitive Spektroskopiemethode etabliert, welche auch in stark absorbierenden Spektralbereichen anwendbar ist. Diese Technik ermöglicht erstmals die Detektion der LSMn von HO bei 742 und 792 cm-1 im neutralen Ladungszustand. Das experimentelle Ergebnis verifiziert theoretische Vorhersagen zur mikroskopischen Struktur dieses flachen Donators. In Raman-Messungen wird der elektrische 1s→2s Übergang von HO bei 273 cm-1 identifiziert und eine Blauverschiebung dieser Größe mit zunehmender HO-Konzentration beobachtet. Der Donator HBC zeigt ebenfalls eine Blauverschiebung des elektrischen 1s→2s(2p) Übergangs, welche durch lokale Gitterverzerrungen nach Hochtemperaturbehandlungen bedingt ist. Eine Raman-Studie charakterisiert das H2-Molekül in Bezug auf seine Bildung, Stabilität, Gitterposition und die Wechselwirkung mit dem ZnO-Kristall. Insbesondere wird seine Rolle für die fortwährende Bildung der Donatoren HO und HBC und des damit verbundenen n-Typ Verhaltens herausgearbeitet. Die Analyse ergibt die eindeutige Identifizierung der in der Literatur mit „hidden hydrogen“ bezeichneten Spezies als H2. Darüber hinaus tragen die beobachteten Umwandlungsprozesse zwischen ortho-H2 und para-H2 sowie die Kopplung an das Phononenspektrum zu einem generellen Verständnis von Wasserstoffmolekülen in Halbleitern bei. Die experimentellen Ergebnisse der LSMn bei 3303 und 3320 cm-1 in Kombination mit Modellrechnungen ergeben einen zugrundeliegenden Defekt mit drei Wasserstoffatomen. Dieser Komplex Y–H3 weist zwei Konfigurationen auf, welche sich durch die Orientierung von nur einer chemischen Bindung unterscheiden. Die Beobachtungen sind mit einer Zinkvakanz besetzt mit drei Wasserstoffatomen bzw. einem Ammoniakmolekül als mikroskopische Struktur gleichermaßen erklärbar. Bisherige Modelle aus der Literatur können damit widerlegt werden. Messungen von Konzentrationsprofilen mit Raman-Spektroskopie offenbaren die lokale Verteilung der Wasserstoffdefekte sowie von Gitterstörungen. An der Oberfläche, im Beisein von Sauerstoffvakanzen, ist HO der dominante flache Donator. In dem sich anschließenden ungestörten Kristallverbund ist hingegen der Donator HBC vorherrschend. In Zentrum, welches von Zinkvakanzen geprägt ist, sind die Konzentrationen von H2 und Y–H3 maximal. In Verbindung mit Temperaturbehandlungen ist eine räumlich aufgelöste Untersuchung der Wechselwirkung möglich

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Demiroglu, Ilker. "Effect of Dimensionality and Polymorphism on the properties of ZnO". Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/277286.

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Throughout this thesis, we have studied ZnO and its properties in a bottom-up manner through a dimensionality range starting from 0D nanoparticles to 3D bulk phases. For the 0D clusters and the 2D nanofilms studied we also considered the effect of a support in models designed to study ZnO thin film growth on the Ag(111) surface. In chapter 3, we have studied ZnO nanoclusters on a Ag support and compared their properties with free space ZnO nanoclusters. In this chapter we highlighted the importance of the presence of the support during the global optimization of the clusters (i.e. as opposed to global optimization of the clusters in free space and then introducing a support). Our results show that the presence of the support strongly affects the energetic stability ranking of the nanocluster isomers. More drastically, after a certain cluster size, the support also stabilizes selectively 2D type structures, which are not stable in free space, with respect to the 3D clusters. The extra stabilization of supported 2D clusters is attributed mainly to the contact area, which is evidently greater for 2D clusters where all the atoms can interact with the surface. The importance of the contact are is also observed for 3D clusters, as ellipsoid bubbles or inflated double layer clusters being of lower energy than more spherical clusters on the support whereas the latter, more symmetric 3D clusters are more stable in free space. Matching of the cluster structure with the surface morphology was found to be another factor determining cluster stability. The Zn3O3 sixmembered ring, which is one of the main motifs for both 3D and 2D clusters, matches best with the Ag(111) surface because it follows the same six-fold (C6) symmetry (or its trigonal C3 subgroup with a three-fold axis, taking into account the distinction between Zn and O atoms). However because of the lattice size differences, such matching dies away for larger ZnO clusters. The preferential stabilities of the 2D structures of ZnO clusters can be seen as the initial stages of thin film growth and is found to be in line with the experimentally observed layered ZnO sheets on the Ag(111) surface. In Chapter 4, we have considered a full 2D-ZnO sheet on Ag(111) surface and also investigated also how H atoms interact with it. Following our results for ZnO nanoclusters on the Ag surface, we highlighted the importance of the degree of 2D-ZnO:Ag(111) unit cell commensurability for calculating accurate sheeton-substrate binding energies. We have found a 8:9 commensurate monolayer to be more favored with interatomic potentials and a 7:8 commensurate monolayer with DFT calculations, where the latter is found in experiment. Our calculations showed no evidence of charge transfer or covalent bonding between the Ag(111) surface and the 2D-ZnO sheet, but did show that the ZnO sheet and the Ag(111) surface exhibit small structural distortions in order to maximize their mutual interaction. Calculations of the unsupported 2D-ZnO sheet interacting with hydrogen provided strong evidence for H forming a low energy Zn 4s–H 1s multi center bonding state when passing through a Zn3O3ring of the 2D-ZnO sheet, thus allowing for relatively facile H transport through the sheet. In chapter 5, we have extended our study of supported 2D ZnO nanofilms with higher coverage models, including triangular islands on top of two full monolayers, prepared to model the experimental system. Our results showed that the triangular adlayer islands induce a transition to the WZ structure in the island core and in local region in the two layers immediately below the island core. The islands are also found to have BCT-structured reconstructions on their edges and T1-structured reconstructions on their corners. These models are found to better match the experimental structural data for the experimental 2.7 ML Ag-supported ZnO film with respect to models assuming a purely layered or a purely WZ structure. In chapter 6, we focused on 4ML nanofilms and compared bulk and the 4 ML nanofilm poymorphism of ZnO. Our results revealed that the stability range of nanofilms and their energetic ordering are radically different than that of bulk polymorphs. We have developed a method to generate a wide range of new low energy nanofilm and bulk polymorphs using nets as a basis, and showed that there exist at least three nanofilm structures with trigonal basal plane symmetry compatible epitaxial growth on fcc metal (111) surfaces that are more stable than layered-ZnO. While confirming the previous theoretical studies predicting the BCT-ZnO phase as being the lowest energy free-standing nanofim for small thicknesses, we obtained a range of structurally related and near energetically degenerate phases, indicating there exists BCT polytypism. With increasing thickness we found that atomically reconstructed wz-ZnO becomes more stable than BCT-ZnO for ~14 MLs, and is always more stable than non-reconstructed wz-ZnO. We have also stressed the influence of strain on polymorphism by showing that BCT-ZnO and layered-ZnO nanofilms are unstable to novel polymorphs under in-plane strain. Together with the T1 structures and BCT structures which were also predicted as reconstructions on island corners in the previous chapter, our results strongly suggest that many new nanofilm polymorphs should be experimentally accessible, and in some cases, may have even already been observed. In chapter 7, we focused on bulk polymorphism and, specifically, investigated the effect of nanoporosity. Our results showed that both energetic instability and band gap increase with nanoporosity and we predicted that nanoporosity could induce band gap increases of up to ~1.5 eV relative to wurtzite ZnO. We showed that the band gap increase is related with bandwidth changes in the conduction band and the valance band. We suggested that the underlying physical mechanism for this effect is that introducing nanoporosity, and thus periodic internal void space, restricts extended orbital overlaps and thus decreases bandwidths. Due to the generality of this argument, we expect that nanoporosity could similarly affect bandgap values in a wide range of materials and could be employed as a band gap engineering method.
El treball de recerca desenvolupat en aquesta tesi es centra en ZnO, un dels semiconductors de tipus II-VI amb un ampli ventall d’aplicacions. En les estructures (ZnO)n suportades, s’observa que la presència del suport afecta l’ordre d’estabilitats dels mateixos però de manera molt més dràstica afecta selectivament les estructures bidimensionals (2D) que, a partir d’una certa grandària, en fase gas són menys estables que les tridimensionals (3D). Els càlculs per a la làmina 2D-ZnO aïllada interaccionant amb l’hidrogen proporcionen una forta evidència per a la formació d’un estat d’enllaços multi-centres de baixa energia quan passa a través de l’anell de Zn3O3 de la làmina 2D-ZnO, permetent així de forma relativament fàcil el transport d’hidrogen a través de la làmina. Quan canviem a models amb illes mes grans, observem reconstruccions estructurals a l’interior i sota l’illa formada per una nova capa incompleta. L’interior de les illes triangulars adopta estructura WZ i esta rodejada per vores amb estructures BCT i cantonades amb estructura T1. S’ha observat que aquests models presenten en un millor acord estructural amb les dades experimentals per el cas de les lamines formades per 2.7 ML que no pas respecte als models que assumeixen una estructura purament grafítica o purament WZ. Hem generat un ampli rang de polimorfs de ZnO basats en lamines hexagonals inspirades en l’enumeració de les seves xarxes subjacents característiques i evaluant l’estabilitat del sòlid “bulk” i les nano-lamines d’aquestes estructures mitjançant calculs ab initio. Hem observat un ampli polimorfisme d’estructures de baixa energia en les nano-lamines amb un ordre d’estabilitat totalment diferent al del sòlid “bulk”. A partir d’aquestes bases generals hem pogut tenir un millor coneixement de les transicions estructurals observades durant el creixement epitaxial i les prediccions d’estabilitat de les nano-lamines en variar-ne el gruix i la pressió exercida. Hem conclòs els nostres resultats explicant que la nanoporositat està inextricablement connectada tant amb la Erel com amb el ΔEgap i hem predit que la nanoporositat pot induir un increment en el band gap de fins a ~1.5 eV relatius a la wurtzita ZnO. Comprovant també la generalitat d’aquest fenomen, pe’l CdS i pel CdSe suggerim que la nanoporositat pot ser emprada com un mètode genèric d’enginyeria de band gap per materials funcionals morfològicament i electrònicament.

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Hultqvist, Adam. "Cadmium Free Buffer Layers and the Influence of their Material Properties on the Performance of Cu(In,Ga)Se2 Solar Cells". Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-133112.

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CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this thesis is to substitute CdS with cadmium-free, more transparent and environmentally benign alternative buffer layers and to analyze how the material properties of alternative layers affect the solar cell performance. The alternative buffer layers have been deposited using Atomic Layer Deposition, ALD. A theoretical explanation for the success of CdS is that its conduction band, Ec, forms a small positive offset with that of CIGS. In one of the studies in this thesis the theory is tested experimentally by changing both the Ec position of the CIGS and of Zn(O,S) buffer layers through changing their gallium and sulfur contents respectively. Surprisingly, the top performing solar cells for all gallium contents have Zn(O,S) buffer layers with the same sulfur content and properties in spite of predicted unfavorable Ec offsets. An explanation is proposed based on observed non-homogenous composition in the buffer layer. This thesis also shows that the solar cell performance is strongly related to the resistivity of alternative buffer layers made of (Zn,Mg)O. A tentative explanation is that a high resistivity reduces the influence of shunt paths at the buffer layer/absorber interface. For devices in operation however, it seems beneficial to induce persistent photoconductivity, by light soaking, which can reduce the effective Ec barrier at the interface and thereby improve the fill factor of the solar cells. Zn-Sn-O is introduced as a new buffer layer in this thesis. The initial studies show that solar cells with Zn-Sn-O buffer layers have comparable performance to the CdS reference devices. While an intrinsic ZnO layer is required for a high reproducibility and performance of solar cells with CdS buffer layers it is shown in this thesis that it can be thinned if Zn(O,S) or omitted if (Zn,Mg)O buffer layers are used instead. As a result, a top conversion efficiency of 18.1 % was achieved with an (Zn,Mg)O buffer layer, a record for a cadmium and sulfur free CIGS solar cell.
Felaktigt tryckt som Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 717

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Tirpak, Olena. "INFLUENCE OF ELECTRON TRAPPING ON MINORITY CARRIER TRANSPORT PROPERTIES OF WIDE BAND GAP SEMICONDUCTORS". Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3278.

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Minority carrier transport properties and the effects of electron irradiation/injection were studied in GaN and ZnO containing dopants known to form acceptor states deep within the materials' bandgap. Minority carrier diffusion length and lifetime changes were investigated using Electron Beam Induced Current (EBIC) method, cathodoluminescence spectroscopy, spectral photoresponse and persistent photoconductivity measurements. It is shown that electron irradiation by the beam of a scanning electron microscope results in a significant increase of minority carrier diffusion length. These findings are supported by the cathodoluminescence measurements that demonstrate the decay of near-band-edge intensity as a consequence of increasing carrier lifetime under continuous irradiation by the electron beam. Temperature-dependent measurements were used to determine the activation energies for the electron irradiation-induced effects. The latter energies were found to be consistent with the involvement of deep acceptor states. Based on these findings, the effects of electron irradiation are explained via the mechanism involving carrier trapping on these levels. Solid-state electron injection was also shown to result in a similar increase of minority carrier lifetime and diffusion length. Solid-state injection was carried out by applying the forward bias to a ZnO homojunction and resulted in a significant improvement of the peak photoresponse of the junction. This improvement was unambiguously correlated with the increase of the minority carrier diffusion length due to electron injection.
Ph.D.
Department of Physics
Sciences
Physics PhD

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Mokhtari, Abbas. "On the growth, magnetic properties and Magneto-Optical Studies of ZnO based Dilute Magnetic Semiconductors and Magnetite". Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.500218.

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Książki na temat "Semiconductor Properties of ZnO"

Jian, Li, Yan Yixun i National Renewable Energy Laboratory (U.S.), red. Design of shallow p-type dopants in ZnO: Preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

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J, Li, Yan Y, United States. Department of Energy, National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Scientific and Technical Information i IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.), red. Design of Shallow p-type Dopants in ZnO (Presentation). Washington, D.C: United States. Dept. of Energy, 2008.

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G, Sachs Kenneth, red. Semiconductor research trends. New York: Nova Science Publishers, 2007.

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Fukata, Naoki, i Riccardo Rurali, red. Fundamental Properties of Semiconductor Nanowires. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9050-4.

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Mönch, Winfried. Electronic Properties of Semiconductor Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06945-5.

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Sadowski, Marcin L., Marek Potemski i Marian Grynberg, red. Optical Properties of Semiconductor Nanostructures. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1.

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Optical properties of semiconductor nanocrystals. Cambridge, UK: Cambridge Unviersity Press, 1998.

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Sadowski, Marcin L. Optical Properties of Semiconductor Nanostructures. Dordrecht: Springer Netherlands, 2000.

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Lay, Guy. Semiconductor Interfaces: Formation and Properties. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987.

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L, Sadowski Marcin, Potemski Marek i Grynberg Marian, red. Optical properties of semiconductor nanostructures. Dordrecht: Kluwer Academic, 2000.

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Części książek na temat "Semiconductor Properties of ZnO"

Voss, Tobias, i Jürgen Gutowski. "Surface Related Optical Properties of ZnO Nanowires". W Wide Band Gap Semiconductor Nanowires 1, 81–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984321.ch4.

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Mallika, A. N., A. Ramachandra Reddy, K. SowriBabu i K. Venugopal Reddy. "Optimizing the Optical Properties of ZnO Nanoparticles with Al Doping". W Physics of Semiconductor Devices, 763–66. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_196.

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Zhang, X. H., Soo Jin Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, S. F. Yu i X. W. Sun. "Fabrication and Optical Properties of ZnO Quantum Dots". W Semiconductor Photonics: Nano-Structured Materials and Devices, 71–73. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.71.

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Le, Hong Quang, i Soo Jin Chua. "Electrical Properties and UV Response of Single ZnO Nanorod". W Semiconductor Photonics: Nano-Structured Materials and Devices, 192–95. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.192.

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Song, J. H. "Optical Properties of GaN and ZnO". W Oxide and Nitride Semiconductors, 311–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_7.

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Oh, D. C. "Electrical Properties of GaN and ZnO". W Oxide and Nitride Semiconductors, 355–414. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_8.

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Huy, P. T., T. T. An, N. D. Chien i Do Jin Kim. "Temperature-Controlled Catalytic Growth and Photoluminescence Properties of ZnO Nanostructures". W Semiconductor Photonics: Nano-Structured Materials and Devices, 68–70. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.68.

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Hanada, T. "Basic Properties of ZnO, GaN, and Related Materials". W Oxide and Nitride Semiconductors, 1–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_1.

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Pandey, Padmini, Mohammad Ramzan Parra, Rajnish Kurchania i Fozia Z. Haque. "Synthesis and Optical Properties of Pure and Eu+3 Ion Doped ZnO Nanoparticles Prepared Via Sol-Gel Method". W Physics of Semiconductor Devices, 599–600. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_151.

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Singh, Chandra Bhal, Surajit Sarkar i Vandana Singh. "Effect of Substrate Temperature Variation and Tartarization on micro-Structural and Optical Properties of Pulsed DC Sputtered Hydrogenated ZnO: Al Films". W Physics of Semiconductor Devices, 771–73. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_198.

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Streszczenia konferencji na temat "Semiconductor Properties of ZnO"

Kovac, J., J. Skriniarova, P. Kudela, I. Novotny, J. Bruncko, D. Donoval, J. Jakabovic i in. "Investigation of GaN/ZnO heterostructures properties". W 2006 International Conference on Advanced Semiconductor Devices and Microsystems. IEEE, 2006. http://dx.doi.org/10.1109/asdam.2006.331199.

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Tudose, I. V., P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas i M. Suchea. "Comparative Study of Sm and La Doped ZnO Properties". W 2018 International Semiconductor Conference (CAS). IEEE, 2018. http://dx.doi.org/10.1109/smicnd.2018.8539807.

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Iacomi, Felicia, C. Baban, R. Apetrei i D. Luca. "Structural and Electro-Optical Properties of ZnO Thin Films". W 2007 International Semiconductor Conference, CAS 2007. IEEE, 2007. http://dx.doi.org/10.1109/smicnd.2007.4519686.

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Li, Linghui, Yungryel Ryu, Henry W. White i Ping Yu. "Optical properties of metal-semiconductor-metal ZnO UV photodetectors". W OPTO, redaktorzy Ferechteh H. Teherani, David C. Look, Cole W. Litton i David J. Rogers. SPIE, 2010. http://dx.doi.org/10.1117/12.843019.

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Masud, Md Abdulla Al, i Zoubeida Ounaies. "Dielectric Properties of Dielectrophoretically Aligned ZnO-PDMS Composites". W ASME 2016 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/smasis2016-9128.

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ZnO based polymer composite materials are of great interest because of their excellent electrical, optical, semiconductor and biocompatible properties. In this study, we synthesize anisotropic composites of aligned ZnO rods in polydimethylsiloxane (PDMS) elastomer and study their dielectric properties as a function of applied electric field and frequency. Submicron ZnO rods are synthesized using an inexpensive, high yield chemical route. Washed and purified ZnO rods are then aligned in uncured PDMS at different electric field and frequency. We find that under electric field, ZnO rotates with their long axis in the direction of the electric field and before coalescing form chains in the silicone elastomer. From the optical microscopy images and in situ dielectric measurements, the best alignment parameters are found at 4 kV/mm and 10 kHz. These conditions are then selected to prepare aligned ZnO-PDMS composites. Complete curing of composites is confirmed using dynamic mechanical analysis (DMA). Our results show that aligned ZnO in uncured PDMS exhibit higher dielectric permittivity compared to random dispersion with the same composition. For the cured ZnO-PDMS composites, dielectric permittivity increases by 80% compared to random composites.

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Ray, Ayan, Debashis Panda, Tamita Rakshit, Sanjay K. Mandal, Indranil Manna i Samit K. Ray. "Growth and optical properties of La0.7Sr0.3MnO3/ZnO heterojunctions". W 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST). IEEE, 2009. http://dx.doi.org/10.1109/edst.2009.5166115.

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Lupan, O., L. Chow, V. Ursaki, E. Monaico, I. Tiginyanu, S. Shishiyanu, T. Shishiyanu, S. Park i A. Schulte. "Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays". W 2007 International Semiconductor Conference (CAS 2007). IEEE, 2007. http://dx.doi.org/10.1109/smicnd.2007.4519732.

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Hamid, Haslinda Abdul, Mat Johar Abdullah, Azlan Abdul Aziz i Siti Azlina Rosli. "Electrical Properties of p-Type Al - N Codoped ZnO Thin Films". W 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.381113.

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Cao Rongrong, Fang Huayong, Wang Fang, Fu Bangran, Feng Yulin, Zhang Kailiang i Yang Baohe. "Piezoelectric properties of ZnO / BN multilayer structures at the nanometer scale". W 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153400.

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Azhar, N. E. A., S. S. Shariffudin, R. Abdul Rani, A. S. Zoolfakar, M. F. Malek, Salman Alrokayan, Haseeb A. Khan i M. Rusop. "Effect of ZnO Composition on the Electrical Properties of MEH-PPV: ZnO Nanocomposites Thin film via Spin Coating". W 2018 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2018. http://dx.doi.org/10.1109/smelec.2018.8481297.

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Raporty organizacyjne na temat "Semiconductor Properties of ZnO"

Ellis, A. B. Luminescent Properties of Semiconductor Electrodes. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1985. http://dx.doi.org/10.21236/ada158841.

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Stevenson, D. A. CrystaL Growth and Mechanical Properties of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 1988. http://dx.doi.org/10.21236/ada198153.

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Schetzina, J. F. Synthesis and Properties of Novel Multilayer Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, październik 1986. http://dx.doi.org/10.21236/ada175461.

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Stevenson, David A. Crystal Growth and Mechanical Properties of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, listopad 1989. http://dx.doi.org/10.21236/ada216697.

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Lovchinov, Konstantin, Georgi Marinov, Miroslav Petrov, Nikolay Tyutyundzhiev, Gergana Alexieva i Tsvetanka Babeva. Influence of Deposition Temperature on the Structural and Optical Properties of Electrochemically Nanostructured ZnO Films. "Prof. Marin Drinov" Publishing House of Bulgarian Academy of Sciences, luty 2020. http://dx.doi.org/10.7546/crabs.2020.02.06.

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Knipp, Peter A. Optical and Transport Properties of Metallic and Semiconductor Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1993. http://dx.doi.org/10.21236/ada270009.

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Hubert, C. A., J. A. Lubin, W. H. Yang i T. E. Huber. Synthesis and Optical Properties of Dense Semiconductor-Dielectric Nanocomposites. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1993. http://dx.doi.org/10.21236/ada271304.

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Lambrecht, Walter R. Magneto-Optical Properties of Hybrid Magnetic Material Semiconductor Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2007. http://dx.doi.org/10.21236/ada472402.

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Zide, Joshua. Growth and Properties of New Epitaxial Metal/Semiconductor Nanocomposites (Final Report). Office of Scientific and Technical Information (OSTI), grudzień 2019. http://dx.doi.org/10.2172/1484174.

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Dongarra, Jack, i Stanimire Tomov. Predicting the Electronic Properties of 3D, Million-atom Semiconductor nanostructure Architectures. Office of Scientific and Technical Information (OSTI), marzec 2012. http://dx.doi.org/10.2172/1036499.

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