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Rozprawy doktorskie na temat „Semiconductor metal interface”

Autor: Grafiati
Data publikacji: 6 września 2023
Data aktualizacji: 7 września 2023

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1

Denk, Matthias. "Structural investigation of solid liquid interfaces metal semiconductor interface /." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29148.

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2

Maani, Colette. "A study of some metal-semiconductor interfaces." Thesis, University of Ulster, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329499.

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3

Palmgren, Pål. "Initial stages of metal- and organic-semiconductor interface formation." Licentiate thesis, KTH, KTH, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3911.

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<p>This licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy. </p><p>First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the a
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4

Yan, Yu. "Interface magnetic properties in ferromagnetic metal/semiconductor and related heterostructures." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20412/.

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This dissertation investigates the growth and magnetic properties of magnetic thin films deposited on semiconductor GaAs and the insulator MgO, which could be useful for devices such as Spin-FET and MRAM. CoFeB amorphous films were grown on both GaAs and MgO. We have studied the origin of the uniaxial magnetic anisotropy (UMA) and perpendicular magnetic anisotropy (PMA) with TEM, VSM and XMCD. Our results demonstrated that the orbital moment of Co atoms play an important role to both UMA and PMA. The origin of UMA in Fe/GaAs (100) system with Cr interlayers is explored. The values of UMA in th
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5

Evans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.

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6

Moran, John Thomas. "The electronic structure of gold-induced reconstructions on vicinal silicon(111)." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283057.

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7

Huang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.

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Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation wa
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8

Zavaliche, Florin. "The metal-semiconductor interface Fe-Si(001) and Fe-InP(001) /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965216217.

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9

Walters, Stephanie A. "The metal - n-type gallium antimonide (110) interface : interfacial reactions and Schottky barrier formation." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238197.

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10

Metcalf, Frances L. "The noble metal/elemental semiconductor interface (a study of Ag on Ge(111))." Thesis, University of Sussex, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306595.

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11

Yano, Hiroshi. "Control of Electronic Characteristics at SiO_2/SiC Interface for SiC Power Metal-Oxide-Semiconductor Devices." 京都大学 (Kyoto University), 2001. http://hdl.handle.net/2433/150681.

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12

Racke, David. "Measuring and Controlling Energy Level Alignment at Hybrid Organic/Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/556212.

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In this dissertation, I present the results of my research regarding hybrid semiconductor interfaces between organic and inorganic semiconductors. Using photoemission spectroscopy, I elucidate the important role of defect-induced electronic states within the inorganic semiconductor phase. These states significantly affect both the energy level alignment and the charge carrier dynamics at the hybrid interface. I demonstrate that the behavior of these hybrid semiconductor interfaces is complex and not well characterized by current models for organic semiconductor interfaces. Specifically, I show
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13

Fonseca, James Ernest. "Accurate treatment of interface roughness in nanoscale double-gate metal oxide semiconductor field effect transistors using non-equilibrium Green's functions." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176318345.

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14

Hossain, Md Tashfin Zayed. "Electrical characteristics of gallium nitride and silicon based metal-oxide-semiconductor (MOS) capacitors." Diss., Kansas State University, 2013. http://hdl.handle.net/2097/16942.

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Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>The integration of high-κ dielectrics with silicon and III-V semiconductors is important due to the need for high speed and high power electronic devices. The purpose of this research was to find the best conditions for fabricating high-κ dielectrics (oxides) on GaN or Si. In particular high-κ oxides can sustain the high breakdown electric field of GaN and utilize the excellent properties of GaN. This research developed an understanding of how process conditions impact the properties of high-κ dielectric on Si and
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15

Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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16

Streb, Fabian. "Novel materials for heat dissipation in semiconductor technologies." Eigenverlag, 2018. https://monarch.qucosa.de/id/qucosa%3A23536.

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Thermal management is a major bottleneck for the next-but-one generation of semiconductor devices, especially the performance of SiC and GaN devices is limited by heat dissipation. This thesis evaluates four new packaging concepts with regards to thermal management: Diamond based substrates, phase change materials, Cu-Graphene composite films and anisotropic heat dissipation. Anisotropic heat dissipation is shown to be the most auspicious concept. A metal-matrix composite baseplate for a high performance power module using annealed pyrolytic graphite is created and evaluated. The baseplate sho
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17

Djeghloul, Fatima Zohra. "Study of organic semiconductor / ferromagnet interfaces by spin-polarized electron scattering and photoemission." Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01062352.

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I studied organic semiconductor/ferromagnet interfaces by characterizing them by spin-polarized electron scattering and photoemission spectroscopy experiments. In the first part, a completely unexpected behaviour of the spin-dependent electron reflection properties of these interfaces is observed. In fact, sub-monolayer coverage of the organic molecules makes the electron reflection amplitude independent of the spin, i.e. both the reflectivity and the reflection phase become independent of the spin orientation of the incident electrons. Although I am not able at the moment to identify the caus
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18

Cai, Wei. "Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-k Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615.

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19

Kobayashi, Takuma. "Study on Defects in SiC MOS Structures and Mobility-Limiting Factors of MOSFETs." Kyoto University, 2018. http://hdl.handle.net/2433/232043.

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20

Fichou, Denis. "L'interface oxyde de zinc/électrolyte : étude des processus primaires." Paris 6, 1986. http://www.theses.fr/1986PA066259.

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21

Charlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.

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22

Badoz, Pierre-Antoine. "Propriétés de transport électronique dans les hétérostructures métal/semiconducteur." Grenoble 1, 1988. http://www.theses.fr/1988GRE10024.

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Le travail porte principalement sur l'etude des proprietes de transport electronique dans les films metalliques ultraminces de cosi::(2) (10 a 20 angstroems) epitaxies sur du silicium. Les principaux points abordes concernent: le transport perpendiculaire, le transport parallele aux interfaces, les proprietes electroniques des siliciures
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23

Tallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.

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24

Curson, Neil Jonathan. "Growth and structure at metal-semiconductor interfaces." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388320.

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25

Rouvière, Jean-Luc. "Structure atomique des joints de grains de flexion d'axe <001> dans le silicium et le germanium." Grenoble 1, 1989. http://www.theses.fr/1989GRE10010.

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Etude de cinq joints de grains de flexion d'axe 001, de grande coincidence (sigma=5, 65, 13, 25 et 41) par microscopie electronique haute resolution et relaxation numerique. Presentation d'une analyse en termes d'unites structurales-dislocation
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26

Makineni, Anil Kumar. "Construction and realisation of measurement system in a radiation field of 10 standard suns." Thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-17209.

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A measurement system is to be presented, which is used to obtain the I-V characteristics of a solar cell and to track its temperature during irra-diation before mounting it into a complete array/module. This project presents both the design and implementation of an Electronic load for testing the solar cell under field conditions of 10000 W/m^2, which is able to provide current versus voltage and power versus voltage charac-teristics of a solar cell using a software based model developed in Lab-VIEW. An efficient water cooling method which includes a heat pipe array system is also suggested. T
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27

Gregory, David. "Charge transfer studies of alkali-metal/semiconductor interfaces." Thesis, University of Liverpool, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240051.

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28

Unsworth, Paul. "Spectroscopic studies of metal alloys and semiconductor interfaces." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343647.

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29

Wang, Zhiqiang. "Studies of the liquid metal and semiconductor interfaces /." The Ohio State University, 1989. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487676261010274.

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30

Schuerlein, Thomas John. "Chemisorption in organic semiconductor systems: Investigation of organic semiconductor-organic semiconductor and organic semiconductor-metal interfaces." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187068.

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The production of ordered thin films of organic monolayers is of general interest to the surface science community and of specific interest to our laboratory where the understanding of small molecule adsorption has been a long term goal. The production of ordered thin films may simplify the study of the interactions of adsorbate molecules on organic films. The production of ordered layers of aromatic hydrocarbons and dye molecules were performed under a variety of deposition conditions in an ultrahigh vacuum (UHV) environment. These films were studied with several UHV analytical techniques inc
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31

Sun, Zhuting. "Electron Transport in High Aspect Ratio Semiconductor Nanowires and Metal-Semiconductor Interfaces." University of Cincinnati / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1479821421998919.

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32

Todescato, Francesco. "Functional dielectric/semiconductor and metal/semiconductor interfaces in organic field-effect transistors." Doctoral thesis, Università degli studi di Padova, 2007. http://hdl.handle.net/11577/3425125.

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The work presented in this thesis focuses on the investigation of two interfaces which play a crucial role in the physics of organic electronic devices: the dielectric/organic semiconductor and the organic semiconductor/metal ones. Regarding the dielectric/OS interface, we have deeply investigated the relationship between the SiO2 cleaning protocol or treatment and the electrical response of OFETs based on two PPV semiconducting polymers (MEH-PPV and OC1C10-PPV) and on a quarterthiopene derivative small molecule (DHCO-4T). Regarding the OS/metal interface, we investigated the electrical per
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33

Müller, Kathrin. "Organic semiconductor interfaces with insulators and metals." Göttingen Cuvillier, 2009. http://d-nb.info/997890533/04.

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34

凌志聰 and Chi-chung Francis Ling. "Positron beam studies of the metal-GaAs (110) interface." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1994. http://hub.hku.hk/bib/B31211689.

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35

Ling, Chi-chung Francis. "Positron beam studies of the metal-GaAs (110) interface /." [Hong Kong : University of Hong Kong], 1994. http://sunzi.lib.hku.hk/hkuto/record.jsp?B13781443.

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36

Wang, Chenggong. "Interface Studies of Organic/Transition Metal Oxide with Organic Semiconductors and the Interfaces in the Perovskite Solar Cell." Thesis, University of Rochester, 2015. http://pqdtopen.proquest.com/#viewpdf?dispub=3723336.

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<p> In recent decades, research and development of organic based semiconductor devices have attracted intensive interests. One of the most essential elements is to understand the electronic structures at various interfaces involved in these devices since the interface properties control many of the critical electronic processes. It is thus necessary to study the electronic properties of the organic semiconductors with surface analytical tools to improve the understanding of the fundamental mechanisms involved in the interface formation. This thesis covers the experimental investigations on som
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37

Kiely, C. J. "An electron microscopy study of some metal-semiconductor interfaces." Thesis, University of Bristol, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375011.

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38

Anandan, C. "Metal contacts to undoped a-Si:H: interface modification and Scottky barrier characteristics." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.

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39

Esfandiari, Hossein. "Ion beam mixing of nickel and cobalt films on silicon." Thesis, University of Salford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304593.

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40

O'Keefe, Matthew Francis. "Optimisation of contacts for indium phosphide millimetre-wave devices." Thesis, University of Leeds, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277202.

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41

Blomfield, Christopher James. "Study of surface modifications for improved selected metal (II-VI) semiconductor based devices." Thesis, Sheffield Hallam University, 1995. http://shura.shu.ac.uk/19362/.

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Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a s
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42

李加碧 and Stella Li. "Interface state generation induced by Fowler-Nordheim tunneling in mosdevices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.

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43

Razgoniaeva, Natalia Razgoniaeva. "Photochemical energy conversion in metal-semiconductor hybrid nanocrystals." Bowling Green State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1465822519.

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44

Wu, Zhenghui. "Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.

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Organic photovoltaics have shown much promise as an alternative photovoltaic technology for application in low-cost, large-scale and flexible solar cells. The application of metal oxides in organic solar cells (OSCs) and the impact of the properties of metal oxide/organic hetero-interfaces on cell performance have attracted a lot of attention. The metal oxide/organic interfaces have a crucial impact on interfacial charge transfer, charge collection and the overall device performance. This thesis is aimed at clarifying the principal interfacial phenomena occurring at the metal oxide/organic het
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45

Li, Stella. "Interface state generation induced by Fowler-Nordheim tunneling in mos devices /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20566487.

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46

ANTOINE, ANNE-MARIE. "Mecanismes de croissance et de constitution d'interfaces dans les couches minces de semiconducteurs amorphes hydrogenes etudies par ellipsometrie spectroscopique in situ." Paris 7, 1987. http://www.theses.fr/1987PA077179.

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Etude de la croissance de couches minces de silicium, germanium et d'alliages silicium-germanium amorphes hydrogenes deposees par decomposition radiofrequence de silane, germane et d'hydrogene. Etude des mecanismes d'initiation de la couche en fonction des conditions de preparation. Analyse de l'influence de la nature du support sur le depot des premieres couches monomoleculaires
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47

胡一帆 and Yi-fan Hu. "Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1997. http://hub.hku.hk/bib/B31215312.

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48

Hu, Yi-fan. "Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces /." Hong Kong : University of Hong Kong, 1997. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19036620.

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Zhu, Xingguang Williams John R. "Alternative growth and interface passivation techniques for SiO2 on 4H-SiC." Auburn, Ala, 2008. http://hdl.handle.net/10415/1494.

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50

Maxisch, Thomas. "Ab initio study of interface states at metal contacts to III-IV semiconductors /." Lausanne, 2003. http://library.epfl.ch/theses/?display=detail&nr=2890.

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Thèse sciences, EPF Lausanne, no 2890 (2003), Faculté Sciences de base SB, Section de physique (Institut de théorie des phénomènes physiques). Directeur: A. Baldereschi ; rapporteurs: H. Beck ... et al.
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