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Książki na temat „Semiconductor metal interface”

Autor: Grafiati
Data publikacji: 6 września 2023
Data aktualizacji: 7 września 2023

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Sprawdź 36 najlepszych książek naukowych na temat „Semiconductor metal interface”.

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1

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

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2

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

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3

A, Hiraki, red. Metal-semiconductor interfaces. Tokyo, Japan: Ohmsha, 1995.

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4

Batra, Inder P., red. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2.

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5

Munich), NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces (1988 Technical University of. Metallization and metal-semiconductor interfaces. New York: Plenum Press, 1989.

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6

Batra, Inder P. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989.

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7

Maani, Colette. A study of some metal-semiconductor interfaces. [s.l: The Author], 1988.

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8

Sin, Wai-Cheong D. Effects of shock waves on metal-semiconductor interfaces. [S.l.]: [s.n.], 1989.

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9

W, Wilmsen Carl, red. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

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10

Eynde, Frank Op't. Analog interfaces for digitalsignal processing systems. Boston: Kluwer, 1993.

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11

Meeting, Materials Research Society, i Symposium C, "CMOS Gate-Stack Scaling-- Materials, Interfaces and Reliability Implications" (2009 : San Francisco, Calif.), red. CMOS gate-stack scaling-- materials, interfaces and reliability implications: Symposium held April 14-16, 2009, San Francisco, california, U.S.A. Warrendale, Pa: Materials Research Society, 2009.

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12

C, Sansen Willy M., red. Analog interfaces for digital signal processing systems. Boston: Kluwer Academic Publishers, 1993.

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13

R, Abernathy C., Materials Research Society Meeting i Symposium on Fundamentals of Novel/Oxide Semiconductor Interfaces (2003 : Boston, Mass.), red. Fundamentals of novel oxide/semiconductor interfaces: Symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2004.

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14

Unimolecular and supramolecular electronics: Chemistry and physics meet at metal-molecule interfaces. Heidelberg: Springer, 2012.

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15

Symposium, D. on Organic Materials for Electronics: Polymer Interfaces with Metals and Semiconductors (1994 Strasbourg France). Organic materials for electronics: Proceedings of Symposium D on Organic Materials for Electronics: Polymer Interfaces with Metals and Semiconductors of the 1994 E-MRS Spring Conference. Amsterdam: North-Holland, 1994.

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16

Symposium D on Organic Materials for Electronics: Polymer Interfaces with Metals and Semiconductors (1994 Strasbourg, France). Organic materials for electronics: Proceedings of Symposium D on Organic Materials for Electronics: Polymer Interfaces with Metals and Semiconductors of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Amsterdam: North-Holland, 1994.

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17

Chang, Yun-Shan. Investigation of interface properties and hot carrier degradation effects in silicon-on-insulator materials and devices. 1995.

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18

Hiraki, A. Metal-Semiconductor Interfaces,. Ios Pr Inc, 1995.

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19

Ando, K., i E. Saitoh. Incoherent spin current. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0002.

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Streszczenie:
This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.
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20

Metallization and Metal-Semiconductor Interfaces. Springer, 2011.

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21

Batra, Inder P. Metallization and Metal-Semiconductor Interfaces. Springer, 2011.

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22

Schmickler, Wolfgang. Interfacial Electrochemistry. Oxford University Press, 1996. http://dx.doi.org/10.1093/oso/9780195089325.001.0001.

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Electrochemistry is the study of a special class of interfaces--those between an ionic and an electronic conductor--that can conduct current. This makes it especially important to research and for industrial applications such as semiconductors. This book examines different topics within interfacial electrochemistry, including the theory of structures and processes at metal- solution and semiconductor-solution interfaces, the principles of classical and modern experimental methods, and some of the applications of electrochemistry. Students and nonspecialists in materials science, surface science, and chemistry will find this a valuable source of information.
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23

Batra, Inder P. Metallization and Metal-Conductor Interfaces. Springer, 1989.

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24

Basu, Prasanta Kumar, Bratati Mukhopadhyay i Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

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Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.
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25

Manoli, Yiannos, i Dominic Maurath. CMOS Circuits for Electromagnetic Vibration Transducers: Interfaces for Ultra-Low Voltage Energy Harvesting. Springer Netherlands, 2016.

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26

Manoli, Yiannos, i Dominic Maurath. CMOS Circuits for Electromagnetic Vibration Transducers: Interfaces for Ultra-Low Voltage Energy Harvesting. Springer London, Limited, 2015.

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27

Manoli, Yiannos, i Dominic Maurath. CMOS Circuits for Electromagnetic Vibration Transducers: Interfaces for Ultra-Low Voltage Energy Harvesting. Springer, 2014.

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28

Manoli, Yiannos, i Dominic Maurath. CMOS Circuits for Electromagnetic Vibration Transducers: Interfaces for Ultra-Low Voltage Energy Harvesting. Springer, 2014.

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29

Bill, Taylor, Alexander A. Demkov, H. Rusty Harris, Jeffery W. Butterbaugh i Willy Rachmady. CMOS Gate-Stack Scaling Vol. 1155: Materials, Interfaces and Reliability Implications. University of Cambridge ESOL Examinations, 2014.

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30

Biocmos Interfaces And Codesign. Springer, 2012.

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31

Wang, Xiaolei, i Shengkai Wang. MOS Interface Physics, Process and Characterization. Taylor & Francis Group, 2021.

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32

Wang, Xiaolei, i Shengkai Wang. MOS Interface Physics, Process and Characterization. Taylor & Francis Group, 2021.

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33

Wang, Xiaolei, i Shengkai Wang. MOS Interface Physics, Process and Characterization. Taylor & Francis Group, 2021.

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34

(Editor), W. L. Mochan, red. Proceedings of the International Workshop on Electrodynamics of Interfaces and Composite Systems: Taxco, Mexico Aug 10-14, 1987 (Advanced Series in). World Scientific Pub Co Inc, 1988.

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35

Vibrational Properties of Defective Oxides and 2D Nanolattices: Insights from First-Principles Simulations. Springer, 2014.

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36

Scalise, Emilio. Vibrational Properties of Defective Oxides and 2D Nanolattices: Insights from First-Principles Simulations. Springer International Publishing AG, 2016.

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