Gotowe bibliografie tematyczne / Semiconductor

Gotowa bibliografia na temat „Semiconductor”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 1 sierpnia 2024

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Spis treści

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Semiconductor”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "Semiconductor"

1

Xiang, Wenlong. "Semiconductor Culture in the Global Economy". Lecture Notes in Education Psychology and Public Media 25, nr 1 (28.11.2023): 7–11. http://dx.doi.org/10.54254/2753-7048/25/20230188.

Pełny tekst źródła
Streszczenie:
The use of technology in multiple industries has contributed to the growth of the global economy. As a core part of todays technology, the impact derived from semiconductors is two-sided. While the general public is focused on the advantages of semiconductors, the political-cultural-national tensions it creates are missing. Semiconductor culture is a combination of technology and politics in the context of economic development. The historical semiconductor battles between countries and the current semiconductor battles confirm this view. This paper reviews the Japan-US semiconductor war in the last century, the Japan-South Korea semiconductor war in this century, and the US-China semiconductor war in the last few years. This paper aims to use the semiconductor cases to demonstrate the adverse effects of semiconductor culture in the global economy. Finally, it concludes that semiconductor culture can strain political relations between nations.
Style APA, Harvard, Vancouver, ISO itp.
2

Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo i Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics". Polymers 12, nr 1 (19.12.2019): 9. http://dx.doi.org/10.3390/polym12010009.

Pełny tekst źródła
Streszczenie:
Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) and the zinc hexadecafluoro-phthalocyanine (F16ZnPc) as n-type molecular semiconductors with the p-type molecular semiconductor dibenzotetrathiafulvalene (DBTTF). Consequently, the π-conjugated semiconductors particles were embedded in a Nylon-11 matrix and characterized, both structurally and considering their optical and electrical properties. Thin films of these materials were manufactured in order to comparatively study the membranes and precursor semiconductor particles. The membranes presented bandgap (Eg) values that were lower than those obtained in the films, which is an indicator of an improvement in their semiconductor capacity. Finally, the membranes were subjected to accelerated lighting conditions, to determine the stability of the polymer and the operating capacity of the membrane. After fatigue conditions, the electrical behavior of the proposed semiconductor membranes remained practically unaltered; therefore, they could have potential applications in molecular electronics. The chemical stability of membranes, which did not degrade in their polymer compound, nor in the semiconductor, was monitored by IR spectroscopy.
Style APA, Harvard, Vancouver, ISO itp.
3

Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor". Applied and Computational Engineering 7, nr 1 (21.07.2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.

Pełny tekst źródła
Streszczenie:
Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.
Style APA, Harvard, Vancouver, ISO itp.
4

Kumar, Anoop. "PRESENT STATUS OF SEMICONDUCTOR INDUSTRY IN INDIA and IT’S FUTURE PROSPECTS". SCHOLARLY RESEARCH JOURNAL FOR INTERDISCIPLINARY STUDIES 9, nr 68 (31.10.2021): 16095–100. http://dx.doi.org/10.21922/srjis.v9i68.10004.

Pełny tekst źródła
Streszczenie:
Semiconductor is now an inseparable part of almost all sectors. Nowadays semiconductors or chips / integrated circuits (ICs) are the lifeblood of all digital Products. Industry estimates are that India’s demand for semi - conductor goods will reach US $ 400 billion by FY 2025. Taiwan’s TSMC and South Korea’s Samsung manufacture as much as 70% of the world’s semiconductors. America only makes about 10% of the chips it uses. According to Global data, the semiconductor industry is facing an unprecedentad supply shortage since the end of the year 2019 due to unprecedented demand growth. The government’s plan to promote Semiconductor manufacturing may have a bright future for Indian semiconductor Industry. The government will seek to incentivise startups to design and make semiconductors. India imported $ 3.14 bn in semiconductor Devices in 2019. Semiconductor world market has to grow by $ 90.80 bn during 2020 - 2024. India can take it’s pie in this opportunity. India has to develop an ecosystem. Capital expenditure is required to expand production to address the rising chip demand. Setting up a new foundry can cost anywhere around $ 15 bn - $ 20 bn. Amid challenges Technology influx such as artificial intelligence, 5G wireless, IOT and cloud computing will remain key factors for rampant growth of semiconductors Industry in India.
Style APA, Harvard, Vancouver, ISO itp.
5

Hockett, R. S. "Txrf Semiconductor Applications". Advances in X-ray Analysis 37 (1993): 565–75. http://dx.doi.org/10.1154/s0376030800016116.

Pełny tekst źródła
Streszczenie:
This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for semiconductors. This review is limited to surface analysis of contamination for semiconductors and does not include chemical analysis in semiconductor processing. TXRF for surface analysis is a relatively new technology. One of the first publications occurred in 1986 using synchrotron radiation. Publications using commercially available TXRF instruments for semiconductor applications began in 1988. Today there are on the order of 100 TXRF instruments worldwide in the semiconductor industry. Since 1988 there have been about 100 publications in this field, but this number does not include numerous abstracts and publications in Japan where the majority of the commercial instruments are found today. The commercial instruments were developed for the primary application of characterizing the cleaning of planar silicon wafers, however, numerous unforeseen applications were developed by users and many of those applications are reported here. In essence TXRF has much broader application today in the semiconductor industry than supporting the cleaning of silicon wafers.
Style APA, Harvard, Vancouver, ISO itp.
6

Wu, Jianhao. "Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI". Applied and Computational Engineering 39, nr 1 (21.02.2024): 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.

Pełny tekst źródła
Streszczenie:
Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the candidate materials for new semiconductor materials due to their many advantages, and their many characteristic parameters are even better than those of silicon semiconductors of the same size. This article introduces the research status, performance characteristics, and comparison of silicon-based and carbon-based integrated circuits, as well as the current application scenarios of silicon-based and carbon-based integrated circuits in the industry, and the many problems encountered. Finally, this article analyses the future development direction of the integrated circuit industry and the possible challenges it may face.
Style APA, Harvard, Vancouver, ISO itp.
7

WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, nr 04 (grudzień 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

Pełny tekst źródła
Streszczenie:
Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
Style APA, Harvard, Vancouver, ISO itp.
8

Yang, Jin-Peng, Hai-Tao Chen i Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, nr 24 (28.06.2022): 245501. http://dx.doi.org/10.1063/5.0096697.

Pełny tekst źródła
Streszczenie:
We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
Style APA, Harvard, Vancouver, ISO itp.
9

Sandoval-Plata, Emilio Iván, Ricardo Ballinas-Indili, Cecilio Álvarez-Toledano i María Elena Sánchez-Vergara. "Dopaje de semiconductor orgánico basado en ftalocianina de silicio". Pädi Boletín Científico de Ciencias Básicas e Ingenierías del ICBI 11, Especial4 (30.11.2023): 55–61. http://dx.doi.org/10.29057/icbi.v11iespecial4.11368.

Pełny tekst źródła
Streszczenie:
Tradicionalmente, los compuestos orgánicos han sido considerados aislantes eléctricos. Sin embargo, el estudio de los semiconductores orgánicos ha llevado al desarrollo de alternativas al silicio semiconductor, basadas en moléculas π-conjugadas tales como las ftalocianinas. En el presente estudio, se llevó a cabo un dopaje químico sobre el dicloruro de ftalocianina de silicio (SiPcCl2), con un ácido dieninoico con sustituyente bromuro, Br-1 (BrDAc). El semiconductor orgánico dopado fue sublimado al alto vacío y depositado sobre diferentes sustratos, para llevar a cabo una caracterización estructural, óptica, y eléctrica como película delgada. Para la caracterización estructural se realizó espectroscopía infrarroja, y se evaluaron parámetros ópticos como la transmitancia y absorbancia, obtenidos mediante espectroscopía ultravioleta-visible. A partir de estos resultados se determinaron por medio del modelo de Tauc, las brechas energéticas. Finalmente, se fabricaron dispositivos eléctricos simples: ITO/SiPcCl2-BrDAc/Ag que fueron caracterizados eléctricamente, para determinar el comportamiento cuando la película semiconductora SiPcCl2-BrDAc forma parte de un dispositivo simple.
Style APA, Harvard, Vancouver, ISO itp.
10

Khurana, Divyansh Anil, Nina Plankensteiner i Philippe M. Vereecken. "Reversible Redox Probes to Determine the Band Edge Locations for Nano-TiO2". ECS Meeting Abstracts MA2023-01, nr 30 (28.08.2023): 1803. http://dx.doi.org/10.1149/ma2023-01301803mtgabs.

Pełny tekst źródła
Streszczenie:
Semiconductor (photo-)electrocatalysts show immense promise in answering the difficulties faced in CO2 electrolysis in relation to the reduction product selectivity. We thus see materials like ZnO[1], Cu2-xSe[2], MoS2 [3], TiO2 [4] and their numerous composites being frequently investigated for their catalytic properties in CO2 (photo-)electroreduction. These catalysts are fabricated via varying techniques and can assume very different thicknesses and morphologies. Although the nano-semiconductors may behave differently, often only the bulk properties are considered when proposing possible reaction pathways. Determining band edge locations of semiconductors in solutions is one such case, where Mott-Schottky (MS) measurements are a widely accepted strategy. The measurement of the potential dependence of the capacitance of the semiconductor space-charge layer under depletion indeed forms an elegant method to determine the flat-band potential and hence the band edge positions for bulk semiconductors in solution. However, the MS method cannot be used for nano-structured semiconductor electrodes in the form of thin films, nanorods or nanoparticles coated on conducting substrates, as their nano-dimensions are typically much smaller than that of a semiconductor depletion layer. In this work, we explored an alternate strategy to determine band edge positions of nano-semiconductors using reversible redox probes. A model thin film system comprised of 30nm anatase TiO2 is used to demonstrate the feasibility of the strategy in aqueous electrolyte solutions. Fe, Ru and Cr based reversible redox species were used as electrochemical probes in cyclic voltammetry experiments with varying solution pH. Based on the presence/absence of the reversible behavior of these probes, we can deduce the TiO2 band edge locations. The procedure also allows us to draw parallels between semiconductor-metal and semiconductor-solution interfaces to gain new insights into the CO2 reduction mechanism on such semiconductor electrodes. Figure 1
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Rozprawy doktorskie na temat "Semiconductor"

1

Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing". Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

Pełny tekst źródła
Streszczenie:
Thesis (M.S.)--West Virginia University, 2004.
Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).
Style APA, Harvard, Vancouver, ISO itp.
2

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /". Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Modi, Nihar Triplett Gregory Edward. "Thermal management in GaAs/AlGaAs laser diode structures". Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.

Pełny tekst źródła
Streszczenie:
Title from PDF of title page (University of Missouri--Columbia, viewed on Feb. 16, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis supervisor: Dr. Gregory Triplett. Includes bibliographical references.
Style APA, Harvard, Vancouver, ISO itp.
4

Ramamurthi, Vikram. "Analysis of production control methods for semiconductor research and development fabs using simulation /". Link to online version, 2004. https://ritdml.rit.edu/dspace/handle/1850/938.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures". Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

Pełny tekst źródła
Streszczenie:
This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A comparison with a plasma theory indicates that in GaAs, band filling and screening of the continuum-state Coulomb enhancement are the most efficient mechanisms, while in ZnSe, exciton screening and broadening are the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair of ZnSe at room temperature is comparable to that of bulk GaAs and the exciton recovery times are of the order of 100 ps or less. A systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs MQWs and the results of nonlinear optical switching and gain in a 58 A GaAs/AlGaAs MQW are reported and discussed. The maximum change in the refractive index is greatest for the MQWs with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 A MQW. A differential energy gain of 0.2 and the contrast of 4 are measured for a 58 MQW using 3 ns laser pulses. The linear and nonlinear optical properties of CdSe semiconductor microcrystallites grown under different heat treatments in borosilicate glasses are investigated. Pump-probe spectroscopic techniques and interferometric techniques were employed to study size quantization effects in these microcrystallites (quantum dots). Nonlinear optical properties due to the transitions between quantum confined electron and hole states are reported for low temperature and room temperature. A relatively large homogeneous linewidth is observed. Single beam saturation experiments for quantum confined samples were performed to study the optical nonlinearities as a function of microcrystallite size. Results indicate that the saturation intensity is larger for smaller size quantum dots.
Style APA, Harvard, Vancouver, ISO itp.
6

Calhoun, Kenneth Harold. "Thin film compound semiconductor devices for photonic interconnects". Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15478.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /". Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices". Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Sun, Yunlong. "Laser processing optimization for semiconductor based devices /". Full text open access at:, 1997. http://content.ohsu.edu/u?/etd,3.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Los, Andrei. "Influence of carrier freeze-out on SiC Schottky junction admittance". Diss., Mississippi State : Mississippi State University, 2001. http://library.msstate.edu/etd/show.asp?etd=etd-03272001-120540.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Książki na temat "Semiconductor"

1

National Measurement Laboratory (U.S.). Office of Standard Reference Materials. Semiconductor. Gaithersburg, MD: U.S. Department of Commerce, National Institute of Standards and Technology, Standard Reference Materials, 1990.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Vavilov, V. S., i N. A. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4684-9069-5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03770-6.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03299-2.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Juha, Kostamovaara, i Vainshtein Sergey, red. Breakdown phenomena in semiconductors and semiconductor devices. Singapore: World Scientific, 2005.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Vavilov, V. S. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Berlin: Springer, 1996.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

(Firm), Lucent Technologies, red. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Wyd. 2. Berlin: Springer Verlag, 1999.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

National Institute of Standards and Technology (U.S.). Semiconductor. [Gaithersburg, Md.]: The Institute, 1998.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

National Measurement Laboratory (U.S.). Office of Standard Reference Materials., red. Semiconductor. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, Standard Reference Materials, 1990.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Części książek na temat "Semiconductor"

1

Sparkes, J. J. "Semiconductors and applications of semiconductor devices". W Semiconductor Devices, 1–43. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4899-7128-9_1.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Gooch, Jan W. "Semiconductor". W Encyclopedic Dictionary of Polymers, 654. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10452.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Weik, Martin H. "semiconductor". W Computer Science and Communications Dictionary, 1544–45. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_16926.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Quay, Rüdiger. "Semiconductors and Semiconductor Devices and Circuits". W Fundamentals of RF and Microwave Techniques and Technologies, 551–745. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-030-94100-0_7.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Kerner, B. S., i V. V. Osipov. "Hot Spots in Semiconductors and Semiconductor Structures". W Autosolitons, 106–9. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-017-0825-8_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Lüth, Hans. "Metal–Semiconductor Junctions and Semiconductor Heterostructures". W Graduate Texts in Physics, 393–448. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-10756-1_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Lüth, Hans. "Metal–Semiconductor Junctions and Semiconductor Heterostructures". W Graduate Texts in Physics, 377–433. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13592-7_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Lüth, Hans. "Metal-Semiconductor Junctions and Semiconductor Heterostructures". W Surfaces and Interfaces of Solids, 372–428. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-10159-9_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Lüth, Hans. "Metal—Semiconductor Junctions and Semiconductor Heterostructures". W Advanced Texts in Physics, 381–435. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04352-3_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Lüth, Hans. "Metal-Semiconductor Junctions and Semiconductor Heterostructures". W Surfaces and Interfaces of Solid Materials, 372–428. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03132-2_8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "Semiconductor"

1

So, F. F., S. R. Forrest, Y. Q. Shi i W. H. Steier. "Molecular semiconductor multilayer structures". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mw6.

Pełny tekst źródła
Streszczenie:
Semiconductor quantum wells and superlattice structures have provided many unique properties which cannot be realized using bulk semiconductor materials. Many novel device structures have been developed based on semiconductor quantum well structures, such as semiconductor lasers and photodetectors. The fabrication of these structures is limited to a narrow range of materials which are lattice matched with the exception of stained-layer superlattices. Lattice mismatch induces strain at the semiconductor heterointerface and can create crystal defects such as dislocations which ultimately degrade device performance. On the other hand, molecules in organic semiconductors are held together by relatively weak Van der Waals forces. Therefore, it is possible to fabricate high quality molecular semiconductor multilayer structures where the strain at the heterointerface is small. Hence, a wide range of materials can be utilized for the fabrication of molecular semiconductor superlattice structures.
Style APA, Harvard, Vancouver, ISO itp.
2

Zany, D. V., Y. O. Shi, F. F. So, S. R. Forrest i W. H. Steier. "Crystalline organic semiconductor thin-film optical waveguides". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fd1.

Pełny tekst źródła
Streszczenie:
Recently, crystalline organic semiconductors have been of interest because of their excellent electronic and optical properties. One crystalline organic semiconductor, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), is of particular importance owing to its usefulness in optoelectronic integrated circuits based on PTCDA-inorganic semiconductor heterojunction structures.
Style APA, Harvard, Vancouver, ISO itp.
3

Vina, Luis, Miquel Garriga i Manuel Cardona. "Spectral ellipsometry of semiconductors and semiconductor structures". W Semi - DL tentative, redaktorzy Fred H. Pollak, Manuel Cardona i David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20842.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Menendez, Jose. "Resonance Raman scattering in semiconductors and semiconductor microstructures". W Semi - DL tentative, redaktorzy Fred H. Pollak, Manuel Cardona i David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20855.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

So, F. F., S. R. Forrest, H. L. Garvin i D. J. Jackson. "A Fast Organic-on-Inorganic Semiconductor Photodetector". W Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/igwo.1988.tub2.

Pełny tekst źródła
Streszczenie:
It has been shown that certain crystalline organic semiconductors such as 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) form rectifying energy bariers1 when deposited onto inorganic semiconductor substrates; for example, Si, GaAs and InP. The organic-on-inorganic semiconductor (OI) heterostructure devices are particularly useful in fabricating many novel devices such as organic-on-inorganic semiconductor transistors2 due to the low reverse leakage current. The high index of refraction and high transmittance in the organic material also enable them to be used for optoelectronic device applications such as optical waveguides and photodetectors. In particular, since PTCDA is transparent in the infrared region it is very useful for waveguide, and various other optoelectronic device applications.
Style APA, Harvard, Vancouver, ISO itp.
6

Young, T. P., G. A. Armstrong i W. P. Smith. "Semiconductor Finite Elements for Integrated Optics". W Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/igwo.1988.mf2.

Pełny tekst źródła
Streszczenie:
The increased use of semiconductors in integrated optics has lead to a requirement for accurate device modelling and CAD tools. Among the numerical techniques available the Finite Element Method (FEM) has been used to analyse optical [1,2] and electronic [3] situations independently. In this paper we describe the first attempts to solve the electro-optical effects in semiconductor waveguides directly using finite elements. The software suite consists of two solver packages. OPTIC is a general purpose waveguide solver developed at GEC Research [4] and QUADS is an adaptive mesh semiconductor solver [3,5]. This paper summarizes the formulations for these analyses and the interfacing implemented and presents preliminary results.
Style APA, Harvard, Vancouver, ISO itp.
7

Zhang, X. C., J. Darrow, B. B. Hu i D. H. Auston. "Optical Rectification from Semiconductor Surface Field". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.pd19.

Pełny tekst źródła
Streszczenie:
We report optical rectification from the surface depletion layer of a semiconductor. As an ultrafast laser pulse illuminates a bare semiconductor surface, photons are absorbed, creating electron-hole pairs. The free carriers are swept cross the depletion layer and form a photocurrent driven by the internal field. This transient current in the depletion layer radiates diffraction-limited electromagnetic waves. The radiation field with a bandwidth from DC to 2 THz does not depend on the long carrier lifetime. The forward and backward rectified fields satisfy a generalized Fresnel's law. To generate a electrical beam with a terahertz bandwidth, in contrast with photoconducting transmitter, a semiconductor wafer does not require radiation-damage, antenna fabrication and external bias. In addition, from the analysis of measured waveforms of the rectified field, strength of the build-in static field and depletion width at the surfaces and interfaces can be estimated with a noncontact approach. The rectified fields from several III-V, II-VI and group IV semiconductors have been examined.
Style APA, Harvard, Vancouver, ISO itp.
8

Nees, John A. "Metal-semiconductor-metal photodetectors on low-temperature-grown semiconductors". W OE/LASE '94, redaktorzy Gail J. Brown, Didier J. Decoster, Joanne S. LaCourse, Yoon-Soo Park, Kenneth D. Pedrotti i Susan R. Sloan. SPIE, 1994. http://dx.doi.org/10.1117/12.175264.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Brown, T. G., i S. M. Horbatuck. "χ3 enhancement by carrier multiplication in semiconductor junctions". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.ml2.

Pełny tekst źródła
Streszczenie:
Two important mechanisms for the nonlinear refractive index in bulk semiconductors are: (1) free carrier plasma interactions and (2) bandfilling and the associated Burstein-Moss shift. Both effects require the creation of excess free carriers by photons having energies slightly less than the bandgap of the semiconductor. This produces a fundamental limit to the strength of the nonlinear optical interaction, since high absorption (required for a high density of free carriers) significantly limits the interaction length over which switching or other functions may be accomplished. One way to exceed this fundamental limit in bulk semiconductors is by carrier multiplication. It is well known that suitable avalanche photodiode structures can enhance the free carrier population by a factor equal to the mean avalanche multiplication. This results in a direct enhancement of the nonlinear refractive index in both direct and indirect semiconductor junctions. The performance of such junctions in quantum-limited optical switching is examined. We show that enhancements in the nonlinear refractive index ranging from 102 to 109 are possible, depending on the choice of materials and operating conditions.
Style APA, Harvard, Vancouver, ISO itp.
10

Carroll, M., D. Bloor i G. H. Cross. "Saturable Absorption in Organic Semiconductor Doped Polymers". W Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/otfa.1993.tha.2.

Pełny tekst źródła
Streszczenie:
In recent years there has been great interest in semiconductor doped glasses with respect to their third order nonlinear optical, (nlo) properties [1]. Such systems have been found to have large third-order nonlinearities, and have exhibited enhancements in their nonlinearities when the semiconductor crystallites within the glass are very small, on the scale of tens of Angstroms. These enhancement effects have been attributed to quantum confinement effects which manifest themselves when the crystallite dimensions are reduced below the Bohr radius of the exciton associated with the nonlinearity. So far interest has centred on systems consisting of inorganic semiconductors such as CdS and CdSe[2] in host glasses and occasionally polymers [3]
Style APA, Harvard, Vancouver, ISO itp.

Raporty organizacyjne na temat "Semiconductor"

1

Hunt, Will, Saif Khan i Dahlia Peterson. China’s Progress in Semiconductor Manufacturing Equipment. Center for Security and Emerging Technology, marzec 2021. http://dx.doi.org/10.51593/20190018.

Pełny tekst źródła
Streszczenie:
To reduce its dependence on the United States and its allies for semiconductors, China is building domestic semiconductor manufacturing facilities by importing U.S., Japanese, and Dutch semiconductor manufacturing equipment. In the longer term, it also hopes to indigenize this equipment to replace imports. U.S. and allied policy responses to China’s efforts will significantly affect its prospects for success in this challenging task.
Style APA, Harvard, Vancouver, ISO itp.
2

Khan, Saif M., Alexander Mann i Dahlia Peterson. The Semiconductor Supply Chain: Assessing National Competitiveness. Center for Security and Emerging Technology, styczeń 2021. http://dx.doi.org/10.51593/20190016.

Pełny tekst źródła
Streszczenie:
Semiconductors are a key component in fueling scientific progress, promoting economic advancement, and ensuring national security. This issue brief summarizes each component of the semiconductor supply chain and where the United States and its allies possess the greatest leverage. A related policy brief, “Securing Semiconductor Supply Chains,” recommends policy actions to ensure the United States maintains this leverage and uses it to promote the beneficial use of emerging technologies, such as artificial intelligence.
Style APA, Harvard, Vancouver, ISO itp.
3

Khan, Saif M. U.S. Semiconductor Exports to China: Current Policies and Trends. Center for Security and Emerging Technology, październik 2020. http://dx.doi.org/10.51593/20200039.

Pełny tekst źródła
Streszczenie:
The United States has long used export controls to prevent the proliferation of advanced semiconductors and the inputs necessary to produce them. With Beijing building up its own chipmaking industry, the United States has begun tightening restrictions on exports of semiconductor manufacturing equipment to China. This brief provides an overview of U.S. semiconductor export control policies and analyzes the impacts of those policies on U.S.-China trade.
Style APA, Harvard, Vancouver, ISO itp.
4

Lazonick, William, i Matt Hopkins. Why the CHIPS Are Down: Stock Buybacks and Subsidies in the U.S. Semiconductor Industry. Institute for New Economic Thinking Working Paper Series, wrzesień 2021. http://dx.doi.org/10.36687/inetwp165.

Pełny tekst źródła
Streszczenie:
The Semiconductor Industry Association (SIA) is promoting the Creating Helpful Incentives to Produce Semiconductors (CHIPS) for America Act, introduced in Congress in June 2020. An SIA press release describes the bill as “bipartisan legislation that would invest tens of billions of dollars in semiconductor manufacturing incentives and research initiatives over the next 5-10 years to strengthen and sustain American leadership in chip technology, which is essential to our country’s economy and national security.” On June 8, 2021, the Senate approved $52 billion for the CHIPS for America Act, dedicated to supporting the U.S. semiconductor industry over the next decade. As of this writing, the Act awaits approval in the House of Representatives. This paper highlights a curious paradox: Most of the SIA corporate members now lobbying for the CHIPS for America Act have squandered past support that the U.S. semiconductor industry has received from the U.S. government for decades by using their corporate cash to do buybacks to boost their own companies’ stock prices. Among the SIA corporate signatories of the letter to President Biden, the five largest stock repurchasers—Intel, IBM, Qualcomm, Texas Instruments, and Broadcom—did a combined $249 billion in buybacks over the decade 2011-2020, equal to 71 percent of their profits and almost five times the subsidies over the next decade for which the SIA is lobbying. In addition, among the members of the Semiconductors in America Coalition (SIAC), formed specifically in May 2021 to lobby Congress for the passage of the CHIPS for America Act, are Apple, Microsoft, Cisco, and Google. These firms spent a combined $633 billion on buybacks during 2011-2020. That is about 12 times the government subsidies provided under the CHIPS for America Act to support semiconductor fabrication in the United States in the upcoming decade. If the Congress wants to achieve the legislation’s stated purpose of promoting major new investments in semiconductors, it needs to deal with this paradox. It could, for example, require the SIA and SIAC to extract pledges from its member corporations that they will cease doing stock buybacks as open-market repurchases over the next ten years. Such regulation could be a first step in rescinding Securities and Exchange Commission Rule 10b-18, which has since 1982 been a major cause of extreme income inequality and loss of global industrial competitiveness in the United States.
Style APA, Harvard, Vancouver, ISO itp.
5

Crawford, M. H., W. W. Chow, A. F. Wright, S. R. Lee, E. D. Jones, J. Han i R. J. Shul. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), kwiecień 1999. http://dx.doi.org/10.2172/5901.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Woods, Debbie, i Devyani Gajjar. Supply of semiconductor chips. Parliamentary Office of Science and Technology, maj 2024. http://dx.doi.org/10.58248/pn721.

Pełny tekst źródła
Streszczenie:
This POSTnote outlines applications of semiconductor chips. It gives an overview of the supply chain, the UK's semiconductor industry, vulnerabilities to the supply chain and policy considerations for improving supply chain resilience.
Style APA, Harvard, Vancouver, ISO itp.
7

Nelson, Keith A. Semiconductor Coherent Control. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2005. http://dx.doi.org/10.21236/ada440285.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Krauss, Todd D. Semiconductor Nanocrystal Photonics. Fort Belvoir, VA: Defense Technical Information Center, sierpień 2005. http://dx.doi.org/10.21236/ada447299.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Brueck, Steven R., i Ganesh Balakrishnan. Nanoscale Semiconductor Electronics. Fort Belvoir, VA: Defense Technical Information Center, luty 2015. http://dx.doi.org/10.21236/ada613851.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Belzer, Barbara J., i David L. Blackburn. Semiconductor measurement technology :. Gaithersburg, MD: National Institute of Standards and Technology, 1997. http://dx.doi.org/10.6028/nist.sp.400-99.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Możesz być także zainteresowany rozszerzonymi bibliografiami na temat „Semiconductor” dla poszczególnych typów źródeł:
Artykuły w czasopismach Rozprawy doktorskie Książki
Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!

Do bibliografii