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Artykuły w czasopismach na temat „Semiconducting material”

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Data publikacji: 6 września 2023

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1

Groń, T., M. Bosacka, E. Filipek, A. Pacześna, P. Urbanowicz, B. Sawicki i H. Duda. "Semiconducting properties of Cu2In3VO9 ceramic material". Ceramics International 43, nr 2 (luty 2017): 2456–59. http://dx.doi.org/10.1016/j.ceramint.2016.11.040.

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Daya Shanker i Rashimi Yadav. "The impact of magnetic field on the surface of carbon-insulator-GaAs Semiconductors which is tunable with a frequency range in the presence of surface magneto Plasmon". International Journal of Science and Research Archive 7, nr 2 (30.12.2022): 306–11. http://dx.doi.org/10.30574/ijsra.2022.7.2.0279.

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In this paper, group velocity and frequency wave can be tuned with an applied external magnetic field when we increase the magnetic field from 0-4 tesla the frequency range can be reduced for given semiconductor materials. The excitation of the two layers of semiconducting material propagating band structures can be explained by the oscillations of electrons in semiconductors on applying the magnetic field, we study the effects of an external magnetic field in the band structure of C-insulator-GaAs materials in presence of surface magneto plasmons concerning plasma frequency below and above the surface band structures. The surface magneto plasmon bands get excited and show the dispersion relation with frequency range. The higher dispersion band moves in faster than the lower dispersion band structure of semiconducting material. The most energy is stored in a lower surface of magneto plasmon. When we increase the magnetic field, the surface of the semiconductor moves opposite to the lower surface of the semiconductor material. Here, we use semiconducting materials instead of metals because metal cannot support a wide frequency range on the magneto-plasmonic surface providing a good tunning property and more flexibility in this mechanism, which is widely useful in telecommunications, magneto-plasmonic devices, and data processing unit. This study is widely more promising due to its wavelength confinements of electromagnetic fields on semiconducting and insulating layers. Due to nonreciprocal effects, the dispersion of frequency waves varies with different band structures and group velocity also varies with two propagating directions among semiconductor-insulator-semiconductor layers.

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3

Hadziioannou, Georges. "Semiconducting Block Copolymers for Self-Assembled Photovoltaic Devices". MRS Bulletin 27, nr 6 (czerwiec 2002): 456–60. http://dx.doi.org/10.1557/mrs2002.145.

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AbstractThis article focuses on self-assembled photovoltaic materials based on a new class of semiconducting block copolymers for application in photovoltaic devices. Topics discussed include the materials concept for efficient photovoltaic-device structures, their macromolecular design and synthesis, and their performance in relation to their molecular, mesoscopic, and interfacial structures. An ideal organic material for this application would have to compete with amorphous silicon in regard to energy-conversion efficiency and fabrication costs. The potential of the semiconducting block copolymers presented in this review lies in the promise of large-area, mechanically flexible, self-structured photovoltaic devices fabricated by inexpensive processing techniques.

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4

McMichael, Stuart, Pilar Fernández-Ibáñez i John Anthony Byrne. "A Review of Photoelectrocatalytic Reactors for Water and Wastewater Treatment". Water 13, nr 9 (26.04.2021): 1198. http://dx.doi.org/10.3390/w13091198.

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The photoexcitation of suitable semiconducting materials in aqueous environments can lead to the production of reactive oxygen species (ROS). ROS can inactivate microorganisms and degrade a range of chemical compounds. In the case of heterogeneous photocatalysis, semiconducting materials may suffer from fast recombination of electron–hole pairs and require post-treatment to separate the photocatalyst when a suspension system is used. To reduce recombination and improve the rate of degradation, an externally applied electrical bias can be used where the semiconducting material is immobilised onto an electrically conducive support and connected to a counter electrode. These electrochemically assisted photocatalytic systems have been termed “photoelectrocatalytic” (PEC). This review will explain the fundamental mechanism of PECs, photoelectrodes, the different types of PEC reactors reported in the literature, the (photo)electrodes used, the contaminants degraded, the key findings and prospects in the research area.

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5

Han, Fanjunjie, Tong Yu, Xin Qu, Aitor Bergara i Guochun Yang. "Semiconducting MnB5 monolayer as a potential photovoltaic material". Journal of Physics: Condensed Matter 33, nr 17 (21.04.2021): 175702. http://dx.doi.org/10.1088/1361-648x/abe269.

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6

Elim, Hendry I., Wei Ji, Meng-Tack Ng i Jagadese J. Vittal. "AgInSe2 nanorods: A semiconducting material for saturable absorber". Applied Physics Letters 90, nr 3 (15.01.2007): 033106. http://dx.doi.org/10.1063/1.2429030.

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7

Hanack, Michael, Armin Lange i Ronald Grosshans. "Tetrazine-bridged phthalocyaninato-metal complexes as semiconducting material". Synthetic Metals 45, nr 1 (październik 1991): 59–70. http://dx.doi.org/10.1016/0379-6779(91)91847-4.

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Solozhenko, Vladimir L., Natalia A. Dubrovinskaia i Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material". Applied Physics Letters 85, nr 9 (30.08.2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.

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9

Klugmann, Eugeniusz, i Michal Polowczyk. "Semiconducting diamond as material for high temperature thermistors". Materials Research Innovations 4, nr 1 (listopad 2000): 45–48. http://dx.doi.org/10.1007/s100190000067.

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10

Jin, Changhyun, Hyunsu Kim, Wan In Lee i Chongmu Lee. "Ultraintense Luminescence in Semiconducting-Material-Sheathed MgO Nanorods". Advanced Materials 23, nr 17 (28.03.2011): 1982–87. http://dx.doi.org/10.1002/adma.201004266.

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11

LI, WEN, DAISUKE ISHIKAWA i HIROKAZU TATSUOKA. "SYNTHESES OF NANOSTRUCTURE BUNDLES BASED ON SEMICONDUCTING METAL SILICIDES". Functional Materials Letters 06, nr 05 (październik 2013): 1340011. http://dx.doi.org/10.1142/s1793604713400110.

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A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi 2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl 2 vapor at atmospheric pressure. A hexagonal MoSi 2 nanosheet, Mg 2 Si / MgO composite nanowire and Mg 2 Si nanowire bundles and MnSi 1.7 nanowire array were synthesized using a MoS 2 layered material, a SiO x nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.

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12

Sreckovic, Milesa, Stanko Ostojic, Jelena Ilic, Zoran Fidanovski, Sanja Jevtic, Dragan Knezevic i Marija Obrenovic. "Photoinduced processes, radiation interaction with material and damages - material hardness". Nuclear Technology and Radiation Protection 30, nr 1 (2015): 23–34. http://dx.doi.org/10.2298/ntrp1501023s.

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Photo and nuclear radiation induced processes are considered through the interaction of radiation with semiconducting, metallic and other materials, including the scintillator materials. The improvement of component efficiency by the use of quantum generators, trimming and hybrid processes with nuclear radiation has been analyzed. The studied processes can be positive or negative depending on application. Besides the experimental approach to the processes and chosen interactions, the analytical description of our experiments, as well as ones from other references, has been performed. The contemporary couplings between the nuclear physics, laser techniques and respective dosimetric aspects have been considered.

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13

Положенцева, Ю. А., Е. В. Алексеева i М. П. Карушев. "Полупроводниковые свойства полимерных пленок на основе комплекса никеля с лигандом саленового типа". Физика твердого тела 64, nr 1 (2022): 64. http://dx.doi.org/10.21883/ftt.2022.01.51832.166.

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Complexes of metals with Schiff bases are considered as promising materials for creating energy storage and photovoltaic devices. In this work, the semiconducting properties of a polymer nickel film with a salen-type ligand (poly-Ni(CH3O-Salen)) were studied by spectrophotometric and Faraday impedance spectroscopy. The Mott-Schottky analysis showed that the polymer film is a semiconducting material with a fairly narrow band gap, high charge carrier density and p-type conductivity. Using the method of Faraday impedance spectroscopy, the limiting stage of the oxygen photoelectroreduction reaction, the process of charge transfer from the film to molecular oxygen, has been established.

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14

Hong, Yang, Jingchao Zhang, Xiaopeng Huang i Xiao Cheng Zeng. "Thermal conductivity of a two-dimensional phosphorene sheet: a comparative study with graphene". Nanoscale 7, nr 44 (2015): 18716–24. http://dx.doi.org/10.1039/c5nr03577e.

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15

Maharubin, Shahrima, Xin Zhang, Fuliang Zhu, Hong-Chao Zhang, Gengxin Zhang i Yue Zhang. "Synthesis and Applications of Semiconducting Graphene". Journal of Nanomaterials 2016 (2016): 1–19. http://dx.doi.org/10.1155/2016/6375962.

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Semimetal-to-semiconductor transition in graphene can bestow graphene with numerous novel and enhanced structural, electrical, optical, and physicochemical characteristics. The scope of graphene and its prospective for an array of implications could be significantly outspread by this transition. In consideration of the recent advancements of semiconducting graphene, this article widely reviews the properties, production, and developing operations of this emergent material. The comparisons among the benefits and difficulties of current methods are made, intending to offer evidences to develop novel and scalable synthesis approaches. The emphasis is on the properties and applications resulting from various conversion methods (doping, controlled reduction, and functionalization), expecting to get improved knowledge on semiconducting graphene materials. Intending to motivate further efficient implications, the mechanisms leading to their beneficial usages for energy conversion and storage are also emphasized.

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16

Hamana, Yoshiki, i Takahide Oya. "Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit". Advances in Science and Technology 95 (październik 2014): 32–37. http://dx.doi.org/10.4028/www.scientific.net/ast.95.32.

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We propose development of an advanced type of "paper transistor" by using carbon-nanotube (CNT) composite papers (CNTCPs) and aim to apply our paper transistors to the construction of logic circuits. It is known that CNTs have many functions such as high electrical and thermal conductivities and metallic and semiconducting properties. Our CNTCP, which has various functions held by CNTs despite being paper, can be fabricated easily by scooping up and drying materials from a mixture of CNT and pulp (paper materials) dispersions. The CNTs have metallic or semiconducting properties, so metallic and semiconducting CNTCPs can be fabricated. By preparing such CNTCPs and normal paper as an insulator, we can produce the paper transistor. In previous work, we confirmed our prototype paper transistor could operate as a p-type transistor. However, the sample had problems, e.g., the internal resistance was rather high. In this study, we aim to overcome the problems by using a novel method for making the CNTCP. As the result of experiments, we succeeded in obtaining new paper transistors with better performance in comparison with the previous one. Moreover, we succeeded in finding a potential use as an n-type paper transistor by using an n-type doping material for semiconducting CNTCPs.

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17

Zeb, Aurang, Zhihua Sun, Tariq Khan, Muhammad Adnan Asghar, Zhenyue Wu, Lina Li, Chengmin Ji i Junhua Luo. "[C5H12N]CdCl3: an ABX3 perovskite-type semiconducting switchable dielectric phase transition material". Inorganic Chemistry Frontiers 4, nr 9 (2017): 1485–92. http://dx.doi.org/10.1039/c7qi00301c.

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18

Prijamboedi, Bambang, An Niza El Aisnada i Wahyu Orphan Kuswantoro. "Synthesis of Composite Zn₂SnO₄/SnO₂ as Photocatalyst Materials by Means of Sonochemical Treatment and Its Electronic Structure". Key Engineering Materials 811 (lipiec 2019): 65–70. http://dx.doi.org/10.4028/www.scientific.net/kem.811.65.

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Metal oxide semiconducting compounds have potential application as photocatalyst materials to decompose many types of dyes and pollutants in the water. Zn2SnO4 and SnO2 are semiconducting materials that have photocatalytic properties and the properties of those two semiconducting materials in the composite form have been studied. Metal oxide compounds of Zn2SnO4 and SnO2 have been prepared through sonochemical methods using ZnCl2 and SnCl4.5H2O as precursors. After sonication and heat treatment at 1000 °C, we could obtain Zn2SnO4 and SnO2 compound in the sample as confirmed by x-ray diffraction measurement. The volume fraction of Zn2SnO4 and SnO2 phases in the sample were found to be at 60 % and 40 %, respectively. The absorption spectra revealed that the band gap of the composite materials is 3.7 eV. This material could degrade all of the methylene blue with concentration of 6.0 x 10-6 M in 120 minutes. The band structure calculation revealed that the comparable band gap values are found for Zn2SnO4 and SnO2 compounds. However, the absorption edges for those compounds are slightly different, with absorption edge at 3.2 eV for SnO2 and 3.6 eV for Zn2SnO4, respectively.

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19

Zhang, Hongyu, Hongzhe Pan, Meng Zhang i Youhua Luo. "First-principles prediction of a new planar hydrocarbon material: half-hydrogenated 14,14,14-graphyne". Physical Chemistry Chemical Physics 18, nr 34 (2016): 23954–60. http://dx.doi.org/10.1039/c6cp03955c.

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20

Parfeniev, R. V., I. I. Farbshtein, I. L. Shulpina, Sergei V. Yakimov, V. P. Shalimov, A. M. Turchaninov, A. I. Ivanov i S. F. Savin. "Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions". Materials Science Forum 329-330 (styczeń 2000): 297–304. http://dx.doi.org/10.4028/www.scientific.net/msf.329-330.297.

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21

Abbas, Ibrahim A., K. A. Aly i Faris S. Alzahrani. "A Two-Temperature Photothermal Interaction in a Semiconducting Material". Journal of Advanced Physics 6, nr 3 (1.09.2017): 402–7. http://dx.doi.org/10.1166/jap.2017.1350.

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22

KAPSE, V., S. GHOSH, F. RAGHUWANSHI, S. KAPSE i U. KHANDEKAR. "Nanocrystalline Ni0.6Zn0.4Fe2O4: A novel semiconducting material for ethanol detection". Talanta 78, nr 1 (15.04.2009): 19–25. http://dx.doi.org/10.1016/j.talanta.2008.10.031.

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23

Garnier, F., i G. Horowitz. "Organic semiconducting polymers as molecular material for electronic devices". Synthetic Metals 18, nr 1-3 (luty 1987): 693–98. http://dx.doi.org/10.1016/0379-6779(87)90963-5.

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24

Toshihiro, Iwaki, i Kobayashi Nobuyuki. "Thermal and residual stresses of Czochralski-grown semiconducting material". International Journal of Solids and Structures 22, nr 3 (1986): 307–14. http://dx.doi.org/10.1016/0020-7683(86)90094-6.

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25

Podolska, Anna, Stephanie Tham, Robert D. Hart, Ruth M. Seeber, Martin Kocan, Martina Kocan, Umesh K. Mishra, Kevin D. G. Pfleger, Gia Parish i Brett D. Nener. "Biocompatibility of semiconducting AlGaN/GaN material with living cells". Sensors and Actuators B: Chemical 169 (lipiec 2012): 401–6. http://dx.doi.org/10.1016/j.snb.2012.04.015.

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Ballestar, A., C. I. L. de Araujo, R. G. Delatorre, A. A. Pasa i N. Garcia. "Measuring Magnetoresistance in a 2D Intergranular Magnetic-Semiconducting Material". Journal of Superconductivity and Novel Magnetism 22, nr 8 (3.06.2009): 737–48. http://dx.doi.org/10.1007/s10948-009-0490-9.

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Ishibashi, Yusuke, Kazuhiko Kuribayashi i Katsuhisa Nagayama. "Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts". JOM 64, nr 9 (23.08.2012): 1102–8. http://dx.doi.org/10.1007/s11837-012-0423-0.

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Podlesny, Blazej, Bogumila Kumanek, Angana Borah, Ryohei Yamaguchi, Tomohiro Shiraki, Tsuyohiko Fujigaya i Dawid Janas. "Thermoelectric Properties of Thin Films from Sorted Single-Walled Carbon Nanotubes". Materials 13, nr 17 (28.08.2020): 3808. http://dx.doi.org/10.3390/ma13173808.

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Single-walled carbon nanotubes (SWCNTs) remain one of the most promising materials of our times. One of the goals is to implement semiconducting and metallic SWCNTs in photonics and microelectronics, respectively. In this work, we demonstrated how such materials could be obtained from the parent material by using the aqueous two-phase extraction method (ATPE) at a large scale. We also developed a dedicated process on how to harvest the SWCNTs from the polymer matrices used to form the biphasic system. The technique is beneficial as it isolates SWCNTs with high purity while simultaneously maintaining their surface intact. To validate the utility of the metallic and semiconducting SWCNTs obtained this way, we transformed them into thin free-standing films and characterized their thermoelectric properties.

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Jacob, S. Santhosh Kumar, Saravananakumar S. i R. Saravanan. "Synthesis and Characterization of the Nano Semiconducting Material Cadmium Sulphide". Materials Science Forum 699 (wrzesień 2011): 79–88. http://dx.doi.org/10.4028/www.scientific.net/msf.699.79.

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In this work, CdS nano particles were synthesized using aqueous precipitation method; This method is simple, fast and can be carried out at room temperature. Various techniques like X-ray powder diffraction and UV-visible absorption spectroscopy are used for the structural characterization like electron density distribution and estimation of inter atomic distances between the atoms of the nano particles. The optical band gap of this material has been determined in order to establish a relationship between energy gap of bulk and nano materials.

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Firdaus, Aulia Anisa, Endhah Purwandari, Retno Asih, Ahmad Sholih i Darminto Darminto. "The Optical Energy Gap of the Semiconducting Intrinsic Layer for Organic Solar Cell Applications". Computational And Experimental Research In Materials And Renewable Energy 6, nr 1 (31.05.2023): 14. http://dx.doi.org/10.19184/cerimre.v6i1.39254.

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The optical energy gap of the semiconducting intrinsic layer plays a crucial role in determining the increase in efficiency. The carbon-based biomass can be a choice for the silicon used as solar cell material. Here, we proposed the best biomass that can be used as a semiconductor component in solar cell applications. Coconut shells as bio-waste and palmyra sap, which are available in most areas of Indonesia, can be the best candidates to be considered. The XRD measurement showed both organic materials have an amorphous phase. The coconut shells sample has two peaks that are identical to graphene peaks, therefore this material is called graphenic-like carbon (GC). Furthermore, from the UV-visible spectroscopy, it was shown that both materials have a high transmittance of more than 95%, which indicates that they have transparent properties. Also, the Tauc plot method gives information about the optical energy gap of coconut shell charcoal (GC) and palmyra sap (a:C) which are 2.67 and 1.83 eV, respectively. From this result, palmyra sap becomes promising material to be applied as an intrinsic layer for semiconducting components in solar cell applications.Keywords: Amorphous phase, Coconut shells charcoal, Optical energy gap, Palmyra sugar.

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Sánchez, R. D., J. Mira, J. Rivas, M. P. Breijo i M. A. Señarís-Rodríguez. "Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite". Journal of Materials Research 14, nr 6 (czerwiec 1999): 2533–39. http://dx.doi.org/10.1557/jmr.1999.0339.

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We report here a study on the electrical and magnetic properties of La1−xBaxCoO3 in the re-entrant semiconducting region (x = 0.20). We find that in this material: (i) the insulator-metal-insulator sequence is unstable and evolves toward a purely semiconducting behavior; the initial r versus T curve can be reinstated upon appropriate annealing treatments; (ii) there are relaxation effects that can be seen by changing the polarity of the electrodes; (iii) there is a negative magnetoresistance Δρ/ρ ∼ 2–3%, for a field as low as 9 kOe, especially at the metal-insulating transition temperatures; and (iv) there are important fluctuations in the electrical resistivity. Taking into account these experimental observations, we can interpret this material as an inhomogeneous system where two thermodynamic phases, one semiconducting and the other metallic and ferromagnetic, coexist, although they are crystallographically indistinguishable.

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Li, Yaobin, Tao Yang, Xitao Liu, Shiguo Han, Jiaqi Wang, Yu Ma, Wuqian Guo, Junhua Luo i Zhihua Sun. "A chiral lead-free photoactive hybrid material with a narrow bandgap". Inorganic Chemistry Frontiers 7, nr 15 (2020): 2770–77. http://dx.doi.org/10.1039/d0qi00546k.

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Kirmayer, Saar, Eyal Aharon, Ekaterina Dovgolevsky, Michael Kalina i Gitti L. Frey. "Self-assembled lamellar MoS 2 , SnS 2 and SiO 2 semiconducting polymer nanocomposites". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 365, nr 1855 (12.04.2007): 1489–508. http://dx.doi.org/10.1098/rsta.2007.2028.

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Lamellar nanocomposites based on semiconducting polymers incorporated into layered inorganic matrices are prepared by the co-assembly of organic and inorganic precursors. Semiconducting polymer-incorporated silica is prepared by introducing the semiconducting polymers into a tetrahydrofuran (THF)/water homogeneous sol solution containing silica precursor species and a surface-active agent. Semiconducting polymer-incorporated MoS 2 and SnS 2 are prepared by Li intercalation into the inorganic compound, exfoliation and restack in the presence of the semiconducting polymer. All lamellar nanocomposite films are organized in domains aligned parallel to the substrate surface plane. The incorporated polymers maintain their semiconducting properties, as evident from their optical absorption and photoluminescence spectra. The optoelectronic properties of the nanocomposites depend on the properties of both the inorganic host and the incorporated guest polymer as demonstrated by integrating the nanocomposite films into light-emitting diodes. Devices based on polymer-incorporated silica and polymer-incorporated MoS 2 show no diode behaviour and no light emission due to the insulating and metallic properties of the silica and MoS 2 hosts. In contrast, diode performance and electroluminescence are obtained from devices based on semiconducting polymer-incorporated semiconducting SnS 2 , demonstrating that judicious selection of the composite components in combination with the optimization of material synthesis conditions allows new hierarchical structures to be tailored for electronic and optoelectronic applications.

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Hasan, Samiul, i Iftikhar Ahmad. "Progress in Hexagonal Boron Nitride (h-BN)-Based Solid-State Neutron Detector". Electronic Materials 3, nr 3 (3.08.2022): 235–51. http://dx.doi.org/10.3390/electronicmat3030020.

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This article will briefly review the progress of h-BN based solid-state metal semiconductor metal (MSM) neutron detectors. In the last decade, several groups have been working on hexagonal boron nitride (h-BN)-based solid-state neutron detectors. Recently, the detection efficiency of 59% has been reported. Efficient, low-cost neutron detectors made from readily available materials are essential for various applications. Neutron detectors are widely used to detect fissile materials and nuclear power plants for security applications. The most common and widely used neutron detectors are 3He based, which are sometimes bulky, difficult to transport, have high absorption length, need relatively high bias voltage (>1000 V), and have low Q-value (0.764 MeV). In addition, 3He is not a readily available material. Thus, there is a strong need to find an alternative detection material. The 10B isotope has a high neutron absorption cross-section, and it has been tested as a coating on the semiconducting materials. Due to the two-step process, neutron capture through 10B and then electron–hole pair generation in a typical semiconducting material, the efficiency of these devices is not up to the mark. The progress in h-BN based detectors requires a review to envision the further improvement in this technology.

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DUDHE, RAVISHANKAR S., HARSHIL N. RAVAL, ANIL KUMAR i V. RAMGOPAL RAO. "AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS". International Journal of Nanoscience 10, nr 04n05 (sierpień 2011): 891–98. http://dx.doi.org/10.1142/s0219581x11009222.

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Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

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Shurbaji, Samar, Pham Thi Huong i Talal Mohammed Altahtamouni. "Review on the Visible Light Photocatalysis for the Decomposition of Ciprofloxacin, Norfloxacin, Tetracyclines, and Sulfonamides Antibiotics in Wastewater". Catalysts 11, nr 4 (29.03.2021): 437. http://dx.doi.org/10.3390/catal11040437.

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Antibiotics are chemical compounds that are used to kill or prevent bacterial growth. They are used in different fields, such as the medical field, agriculture, and veterinary. Antibiotics end up in wastewater, which causes the threat of developing antibacterial resistance; therefore, antibiotics must be eliminated from wastewater. Different conventional elimination methods are limited due to their high cost and effort, or incomplete elimination. Semiconductor-assisted photocatalysis arises as an effective elimination method for different organic wastes including antibiotics. A variety of semiconducting materials were tested to eliminate antibiotics from wastewater; nevertheless, research is still ongoing due to some limitations. This review summarizes the recent studies regarding semiconducting material modifications for antibiotic degradation using visible light irradiation.

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Cocchi, Caterina, i Holger-Dietrich Saßnick. "Ab Initio Quantum-Mechanical Predictions of Semiconducting Photocathode Materials". Micromachines 12, nr 9 (24.08.2021): 1002. http://dx.doi.org/10.3390/mi12091002.

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Ab initio Quantum-Mechanical methods are well-established tools for material characterization and discovery in many technological areas. Recently, state-of-the-art approaches based on density-functional theory and many-body perturbation theory were successfully applied to semiconducting alkali antimonides and tellurides, which are currently employed as photocathodes in particle accelerator facilities. The results of these studies have unveiled the potential of ab initio methods to complement experimental and technical efforts for the development of new, more efficient materials for vacuum electron sources. Concomitantly, these findings have revealed the need for theory to go beyond the status quo in order to face the challenges of modeling such complex systems and their properties in operando conditions. In this review, we summarize recent progress in the application of ab initio many-body methods to investigate photocathode materials, analyzing the merits and the limitations of the standard approaches with respect to the confronted scientific questions. In particular, we emphasize the necessary trade-off between computational accuracy and feasibility that is intrinsic to these studies, and propose possible routes to optimize it. We finally discuss novel schemes for computationally-aided material discovery that are suitable for the development of ultra-bright electron sources toward the incoming era of artificial intelligence.

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Messina, Sarah, Paz Hernández i Yolanda Peña. "Semiconducting Thin Films of CuSbS2". Quimica Hoy 2, nr 1 (31.12.2011): 4. http://dx.doi.org/10.29105/qh2.1-87.

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In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.

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Stejskal, Jaroslav, Patrycja Bober, Miroslava Trchová, Jiří Horský, Zuzana Walterová, Sergey K. Filippov, Tomáš Plachý i Miroslav Mrlík. "Oxidation of pyrrole with p-benzoquinone to semiconducting products and their application in electrorheology". New Journal of Chemistry 42, nr 12 (2018): 10167–76. http://dx.doi.org/10.1039/c8nj01283k.

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Khan, Asif Ali, Rizwan Hussain i Shakeeba Shaheen. "Electrical conductivity and acetaldehyde vapour sensing studies on synthetic polypyrrole–titanium(iv)sulphosalicylophosphate nanocomposite cation exchange material". New Journal of Chemistry 40, nr 3 (2016): 2200–2210. http://dx.doi.org/10.1039/c5nj03129j.

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Mahmood, A., i L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide". Journal of Materials Research 20, nr 5 (maj 2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.

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Band-structure calculations of germanium carbide (GeC) show that it is a new indirect wide band gap semiconducting material, which crystallizes in both cubic and hexagonal phases. Through the density functional and total-energy technique in the generalized gradient approximation, the two polytypes 3C and 2H of GeC were studied. According to our calculations, it is a hard material with a percentage of covalency of about 80–90%. Important energy gaps were determined. The bulk modulus, density of states, and charge density were calculated. For the bulk modulus calculations, Murnaghan’s equation of state was used under elastic deformation to measure hardness. Our calculations showed that this semiconducting material crystallizes in zincblend (Eg = 1.76 eV) and wurtzite (Eg = 2.5 eV) structures.

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Mencel, K., P. Durlak, M. Rok, R. Jakubas, J. Baran, W. Medycki, A. Ciżman i A. Piecha-Bisiorek. "Widely used hardly known. An insight into electric and dynamic properties of formamidinium iodide". RSC Advances 8, nr 47 (2018): 26506–16. http://dx.doi.org/10.1039/c8ra03871f.

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Kim, Kyoung-Hwan, Myung-June Park i Ju-Hyung Kim. "Crack-Assisted Charge Injection into Solvent-Free Liquid Organic Semiconductors via Local Electric Field Enhancement". Materials 13, nr 15 (28.07.2020): 3349. http://dx.doi.org/10.3390/ma13153349.

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Non-volatile liquid organic semiconducting materials have received much attention as emerging functional materials for organic electronic and optoelectronic devices due to their remarkable advantages. However, charge injection and transport processes are significantly impeded at interfaces between electrodes and liquid organic semiconductors, resulting in overall lower performance compared to conventional solid-state electronic devices. Here we successfully demonstrate efficient charge injection into solvent-free liquid organic semiconductors via cracked metal structures with a large number of edges leading to local electric field enhancement. For this work, thin metal films on deformable polymer substrates were mechanically stretched to generate cracks on the metal surfaces in a controlled manner, and charge injection properties into a typical non-volatile liquid organic semiconducting material, (9-2-ethylhexyl)carbazole (EHCz), were investigated in low bias region (i.e., ohmic current region). It was found that the cracked structures significantly increased the current density at a fixed external bias voltage via the local electric field enhancement, which was strongly supported by field intensity calculation using COMSOL Multiphysics software. We anticipate that these results will significantly contribute to the development and further refinement of various organic electronic and optoelectronic devices based on non-volatile liquid organic semiconducting materials.

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Zhong, Ming-Min, Cheng Huang i Chun-Ling Tian. "Phase stability, Debye temperature and hardness of semiconducting manganese tetraboride MnB4: First-principles investigations". International Journal of Modern Physics B 31, nr 20 (10.08.2017): 1750131. http://dx.doi.org/10.1142/s0217979217501314.

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First-principles investigations are employed to provide a fundamental understanding of the structural features, phase stability, mechanical properties, Debye temperature, and hardness of manganese tetraboride. Eight candidate structures of known transition-metal tetraborides are chosen to probe. The calculated lattice parameters, elastic properties, Poisson’s ratio, and [Formula: see text] ratio are derived. It is observed that the monoclinic structure with [Formula: see text] symmetry (MnB4–MnB4) is the most stable in energy. The mechanical and thermodynamic stabilities of seven possible phases are confirmed by the calculated elastic constants and formation enthalpy. Moreover, the analysis on density of states demonstrates semiconducting behavior of MnB4–MnB4 and different metallic behaviors of other phases. The estimated hardness of MnB4–MnB4 is 38.3 GPa, which is in good agreement with experimental value. Furthermore, the relationship between hardness and Debye temperature is investigated and verifies that MnB4–MnB4 is a newly potential semiconducting ultrahard material with high melting point. It provides a new perspective of searching for semiconducting superhard materials to be applied in extreme conditions.

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Wang, Jingyu, i Wen Zeng. "Research Progress on Humidity-Sensing Properties of Cu-Based Humidity Sensors: A Review". Journal of Sensors 2022 (25.05.2022): 1–29. http://dx.doi.org/10.1155/2022/7749890.

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Novel humidity sensors based on semiconducting metal oxides with good humidity-sensing properties have attracted extensive attention, which due to their high sensitivity at room temperature, high safety, low hysteresis, and long-term stability. As a typical p-type semiconductor metal oxide, CuO is considered to be a high-performance moisture-sensitive material; however, with the development of production, the complex working environment has put forward higher requirements for its humidity sensitivity, especially sensitivity and stability. In this regard, workers around the world are working to improve the moisture-sensing properties of sensing elements. In this review, the humidity-sensing properties of CuO-based moisture-sensitive materials are comprehensively summarized, focusing on effective measures to improve the moisture-sensing properties of CuO-based moisture-sensitive materials, including surface modification and nanocomposites. The future research of semiconducting metal oxide humidity-sensitive materials is also prospected.

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Sun, Songsong, Fanchen Meng, Hongyan Wang, Hui Wang i Yuxiang Ni. "Novel two-dimensional semiconductor SnP3: high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations". Journal of Materials Chemistry A 6, nr 25 (2018): 11890–97. http://dx.doi.org/10.1039/c8ta02494d.

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Ma, Yunlong, Zhenjing Kang i Qingdong Zheng. "Recent advances in wide bandgap semiconducting polymers for polymer solar cells". Journal of Materials Chemistry A 5, nr 5 (2017): 1860–72. http://dx.doi.org/10.1039/c6ta09325f.

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Casellas, Nicolás M., Indre Urbanaviciute, Tim D. Cornelissen, José Augusto Berrocal, Tomás Torres, Martijn Kemerink i Miguel García-Iglesias. "Resistive switching in an organic supramolecular semiconducting ferroelectric". Chemical Communications 55, nr 60 (2019): 8828–31. http://dx.doi.org/10.1039/c9cc02466b.

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Shah, J., W. Wang, H. M. Sohail i R. I. G. Uhrberg. "Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material". 2D Materials 7, nr 2 (6.02.2020): 025013. http://dx.doi.org/10.1088/2053-1583/ab64fb.

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Pshenai-Severin, D. A., Yu I. Ravich i M. V. Vedernikov. "An artificially anisotropic thermoelectric material with semiconducting and superconducting layers". Semiconductors 34, nr 10 (październik 2000): 1214–18. http://dx.doi.org/10.1134/1.1317586.

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