Artykuły w czasopismach na temat „Scandium aluminum nitride (ScAlN)”
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N. I .M. Nor, N. Khalid, H. Aris, M. S. Mispan i N. Aiman Syahmi. "Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator". International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (26.12.2023): 121–30. http://dx.doi.org/10.58915/ijneam.v16idecember.398.
Pełny tekst źródłaHähnlein, Bernd, Tim Hofmann, Katja Tonisch, Jörg Pezoldt, Jaroslav Kovac i Stefan Krischok. "Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications". Key Engineering Materials 865 (wrzesień 2020): 13–18. http://dx.doi.org/10.4028/www.scientific.net/kem.865.13.
Pełny tekst źródłaZhang, Qiaozhen, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew i Xiaojuan Sun. "Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices". Materials 14, nr 21 (27.10.2021): 6437. http://dx.doi.org/10.3390/ma14216437.
Pełny tekst źródłaWei, Min, Yan Liu, Yuanhang Qu, Xiyu Gu, Yilin Wang, Wenjuan Liu, Yao Cai, Shishang Guo i Chengliang Sun. "Development of Temperature Sensor Based on AlN/ScAlN SAW Resonators". Electronics 12, nr 18 (12.09.2023): 3863. http://dx.doi.org/10.3390/electronics12183863.
Pełny tekst źródłaLi, Minghua, Huamao Lin, Kan Hu i Yao Zhu. "Oxide overlayer formation on sputtered ScAlN film exposed to air". Applied Physics Letters 121, nr 11 (12.09.2022): 111602. http://dx.doi.org/10.1063/5.0106717.
Pełny tekst źródłaZhang, Yuchao, Bin Miao, Guanghua Wang, Hongyu Zhou, Shiqin Zhang, Yimin Hu, Junfeng Wu, Xuechao Yu i Jiadong Li. "ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing". Micromachines 14, nr 3 (23.02.2023): 516. http://dx.doi.org/10.3390/mi14030516.
Pełny tekst źródłaTominaga, Takumi, Shinji Takayanagi i Takahiko Yanagitani. "Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films". Journal of Physics D: Applied Physics 55, nr 10 (9.12.2021): 105306. http://dx.doi.org/10.1088/1361-6463/ac3d5c.
Pełny tekst źródłaLiu, Xiaonan, Qiaozhen Zhang, Mingzhu Chen, Yaqi Liu, Jianqiu Zhu, Jiye Yang, Feifei Wang, Yanxue Tang i Xiangyong Zhao. "Multiphysics Modeling and Analysis of Sc-Doped AlN Thin Film Based Piezoelectric Micromachined Ultrasonic Transducer by Finite Element Method". Micromachines 14, nr 10 (18.10.2023): 1942. http://dx.doi.org/10.3390/mi14101942.
Pełny tekst źródłaJi, Meilin, Haolin Yang, Yongxin Zhou, Xueying Xiu, Haochen Lv i Songsong Zhang. "Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections". Micromachines 13, nr 12 (19.12.2022): 2260. http://dx.doi.org/10.3390/mi13122260.
Pełny tekst źródłaStoeckel, Chris, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller i Harald Kuhn. "Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors". Micromachines 13, nr 4 (15.04.2022): 625. http://dx.doi.org/10.3390/mi13040625.
Pełny tekst źródłaKrey, Maximilian, Bernd Hähnlein, Katja Tonisch, Stefan Krischok i Hannes Töpfer. "Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory". Sensors 20, nr 4 (13.02.2020): 1001. http://dx.doi.org/10.3390/s20041001.
Pełny tekst źródłaZhang, Zhenghu, Linwei Zhang, Zhipeng Wu, Yunfei Gao i Liang Lou. "A High-Sensitivity MEMS Accelerometer Using a Sc0.8Al0.2N-Based Four Beam Structure". Micromachines 14, nr 5 (18.05.2023): 1069. http://dx.doi.org/10.3390/mi14051069.
Pełny tekst źródłaJang, Youna, i Dal Ahn. "Analyzing Three Types of Design Methods for 5G N41 Band Acoustic Wave Filters". International Journal of RF and Microwave Computer-Aided Engineering 2024 (13.01.2024): 1–12. http://dx.doi.org/10.1155/2024/4638443.
Pełny tekst źródłaShao, Shuai, Zhifang Luo, Kangfu Liu i Tao Wu. "Lorentz-force gyrator based on AlScN piezoelectric thin film". Applied Physics Letters 121, nr 21 (21.11.2022): 213505. http://dx.doi.org/10.1063/5.0122325.
Pełny tekst źródłaZhou, Yongxin, Yuandong Gu i Songsong Zhang. "Nondestructive Wafer Level MEMS Piezoelectric Device Thickness Detection". Micromachines 13, nr 11 (5.11.2022): 1916. http://dx.doi.org/10.3390/mi13111916.
Pełny tekst źródłaMi, Zetian. "(Invited) Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device Applications". ECS Meeting Abstracts MA2023-02, nr 32 (22.12.2023): 1579. http://dx.doi.org/10.1149/ma2023-02321579mtgabs.
Pełny tekst źródłaNian, Laixia, Yuanhang Qu, Xiyu Gu, Tiancheng Luo, Ying Xie, Min Wei, Yao Cai, Yan Liu i Chengliang Sun. "Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films". Micromachines 14, nr 3 (27.02.2023): 557. http://dx.doi.org/10.3390/mi14030557.
Pełny tekst źródłaZhukov, Vladlen V., Denis A. Shcherbakov, Pavel B. Sorokin i Boris P. Sorokin. "DEPENDENCE OF PHYSICAL PROPERTIES OF PIEZOELECTRIC ALUMINUM-SCANDIUM NITRIDE ON SCANDIUM CONCENTRATION". IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA 64, nr 6 (16.05.2021): 95–103. http://dx.doi.org/10.6060/ivkkt.20216406.6384.
Pełny tekst źródłaPark, Mingyo, Zhijian Hao, Rytis Dargis, Andrew Clark i Azadeh Ansari. "Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators". Journal of Microelectromechanical Systems 29, nr 4 (sierpień 2020): 490–98. http://dx.doi.org/10.1109/jmems.2020.3001233.
Pełny tekst źródłaLeone, Stefano, Jana Ligl, Christian Manz, Lutz Kirste, Theodor Fuchs, Hanspeter Menner, Mario Prescher i in. "Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride". physica status solidi (RRL) – Rapid Research Letters 14, nr 1 (7.11.2019): 1900535. http://dx.doi.org/10.1002/pssr.201900535.
Pełny tekst źródłaŽukauskaitė, Agnė. "Editorial for Special Issue “Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices”". Micromachines 14, nr 5 (18.05.2023): 1067. http://dx.doi.org/10.3390/mi14051067.
Pełny tekst źródłaKozlov, A. G., i T. N. Torgash. "Influence of scandium concentration on parameters of piezoelectric transducer based on aluminum scandium nitride". Journal of Physics: Conference Series 1546 (maj 2020): 012118. http://dx.doi.org/10.1088/1742-6596/1546/1/012118.
Pełny tekst źródłaAKIYAMA, Morito, Tatsuo TABARU, Keiko NISHIKUBO, Akihiko TESHIGAHARA i Kazuhiko KANO. "Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments". Journal of the Ceramic Society of Japan 118, nr 1384 (2010): 1166–69. http://dx.doi.org/10.2109/jcersj2.118.1166.
Pełny tekst źródłaKim, Young-Wook, Sung-Hee Lee, Toshiyuki Nishimura i Mamoru Mitomo. "Heat-resistant silicon carbide with aluminum nitride and scandium oxide". Acta Materialia 53, nr 17 (październik 2005): 4701–8. http://dx.doi.org/10.1016/j.actamat.2005.07.002.
Pełny tekst źródłaRassay, Sushant, Dicheng Mo i Roozbeh Tabrizian. "Dual-Mode Scandium-Aluminum Nitride Lamb-Wave Resonators Using Reconfigurable Periodic Poling". Micromachines 13, nr 7 (26.06.2022): 1003. http://dx.doi.org/10.3390/mi13071003.
Pełny tekst źródłaShifat, A. S. M. Zadid, Isaac Stricklin, Ravi Kiran Chityala, Arjun Aryal, Giovanni Esteves, Aleem Siddiqui i Tito Busani. "Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution". Nanomaterials 13, nr 2 (9.01.2023): 274. http://dx.doi.org/10.3390/nano13020274.
Pełny tekst źródłaWang, Dixiong, Jeffrey Zheng, Pariasadat Musavigharavi, Wanlin Zhu, Alexandre C. Foucher, Susan E. Trolier-McKinstry, Eric A. Stach i Roy H. Olsson. "Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films". IEEE Electron Device Letters 41, nr 12 (grudzień 2020): 1774–77. http://dx.doi.org/10.1109/led.2020.3034576.
Pełny tekst źródłaAkiyama, Morito, Keiichi Umeda, Atsushi Honda i Toshimi Nagase. "Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films". Applied Physics Letters 102, nr 2 (14.01.2013): 021915. http://dx.doi.org/10.1063/1.4788728.
Pełny tekst źródłaAkiyama, Morito, Kazuhiko Kano i Akihiko Teshigahara. "Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films". Applied Physics Letters 95, nr 16 (19.10.2009): 162107. http://dx.doi.org/10.1063/1.3251072.
Pełny tekst źródłaSong, Yiwen, Carlos Perez, Giovanni Esteves, James Spencer Lundh, Christopher B. Saltonstall, Thomas E. Beechem, Jung In Yang i in. "Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond". ACS Applied Materials & Interfaces 13, nr 16 (14.04.2021): 19031–41. http://dx.doi.org/10.1021/acsami.1c02912.
Pełny tekst źródłaMusavigharavi, Pariasadat, Andrew C. Meng, Dixiong Wang, Jeffery Zheng, Alexandre C. Foucher, Roy H. Olsson i Eric A. Stach. "Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films". Journal of Physical Chemistry C 125, nr 26 (24.06.2021): 14394–400. http://dx.doi.org/10.1021/acs.jpcc.1c01523.
Pełny tekst źródłaMoreira, Milena, Johan Bjurström, Ilia Katardjev i Ventsislav Yantchev. "Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications". Vacuum 86, nr 1 (lipiec 2011): 23–26. http://dx.doi.org/10.1016/j.vacuum.2011.03.026.
Pełny tekst źródłaWang, Jialin, Mingyo Park, Stefan Mertin, Tuomas Pensala, Farrokh Ayazi i Azadeh Ansari. "A Film Bulk Acoustic Resonator Based on Ferroelectric Aluminum Scandium Nitride Films". Journal of Microelectromechanical Systems 29, nr 5 (październik 2020): 741–47. http://dx.doi.org/10.1109/jmems.2020.3014584.
Pełny tekst źródłaAlvarez, Gustavo A., Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena i Zhiting Tian. "Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy". Materials Research Letters 11, nr 12 (14.11.2023): 1048–54. http://dx.doi.org/10.1080/21663831.2023.2279667.
Pełny tekst źródłaLiu, Xiwen, Dixiong Wang, Kwan-Ho Kim, Keshava Katti, Jeffrey Zheng, Pariasadat Musavigharavi, Jinshui Miao, Eric A. Stach, Roy H. Olsson i Deep Jariwala. "Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory". Nano Letters 21, nr 9 (21.04.2021): 3753–61. http://dx.doi.org/10.1021/acs.nanolett.0c05051.
Pełny tekst źródłaHuang, Chukun, Haotian Shi, Linfeng Yu, Kang Wang, Ming Cheng, Qiang Huang, Wenting Jiao i Junqiang Sun. "Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film". Advanced Optical Materials 10, nr 6 (21.01.2022): 2102334. http://dx.doi.org/10.1002/adom.202102334.
Pełny tekst źródłaNg, D. K. T., T. Zhang, L. Y. Siow, L. Xu, C. P. Ho, H. Cai, L. Y. T. Lee, Q. Zhang i N. Singh. "A functional CMOS compatible MEMS pyroelectric detector using 12%-doped scandium aluminum nitride". Applied Physics Letters 117, nr 18 (2.11.2020): 183506. http://dx.doi.org/10.1063/5.0024192.
Pełny tekst źródłaWang, Qi, Yipeng Lu, Sergey Mishin, Yury Oshmyansky i David A. Horsley. "Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers". Journal of Microelectromechanical Systems 26, nr 5 (październik 2017): 1132–39. http://dx.doi.org/10.1109/jmems.2017.2712101.
Pełny tekst źródłaWang, Jialin, Yue Zheng i Azadeh Ansari. "Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States". physica status solidi (RRL) – Rapid Research Letters 15, nr 5 (23.04.2021): 2100034. http://dx.doi.org/10.1002/pssr.202100034.
Pełny tekst źródłaJia, Licheng, Lei Shi, Zhaoyang Lu, Chengliang Sun i Guoqiang Wu. "A High-Performance 9.5% Scandium-Doped Aluminum Nitride Piezoelectric MEMS Hydrophone With Honeycomb Structure". IEEE Electron Device Letters 42, nr 12 (grudzień 2021): 1845–48. http://dx.doi.org/10.1109/led.2021.3120806.
Pełny tekst źródłaDou, Wentong, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu i Wenjie Yu. "Super-High-Frequency Bulk Acoustic Resonators Based on Aluminum Scandium Nitride for Wideband Applications". Nanomaterials 13, nr 20 (10.10.2023): 2737. http://dx.doi.org/10.3390/nano13202737.
Pełny tekst źródłaLiu, Xiwen, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson i Deep Jariwala. "Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios". Applied Physics Letters 118, nr 20 (17.05.2021): 202901. http://dx.doi.org/10.1063/5.0051940.
Pełny tekst źródłaZheng, Jeffrey X., Dixiong Wang, Pariasadat Musavigharavi, Merrilyn Mercy Adzo Fiagbenu, Deep Jariwala, Eric A. Stach i Roy H. Olsson. "Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure". Journal of Applied Physics 130, nr 14 (14.10.2021): 144101. http://dx.doi.org/10.1063/5.0064041.
Pełny tekst źródłaTang, Zichen, Giovanni Esteves, Jeffrey Zheng i Roy H. Olsson. "Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions". Micromachines 13, nr 7 (2.07.2022): 1066. http://dx.doi.org/10.3390/mi13071066.
Pełny tekst źródłaKo, Shin-Il, Sang-Jin Lee, Myong-Hoon Roh, Wonjoong Kim i Young-Wook Kim. "Effect of annealing on mechanical properties of silicon carbide sintered with aluminum nitride and scandium oxide". Metals and Materials International 15, nr 1 (luty 2009): 149–53. http://dx.doi.org/10.1007/s12540-009-0149-x.
Pełny tekst źródłaAkiyama, Morito, Toshihiro Kamohara, Kazuhiko Kano, Akihiko Teshigahara, Yukihiro Takeuchi i Nobuaki Kawahara. "Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering". Advanced Materials 21, nr 5 (2.12.2008): 593–96. http://dx.doi.org/10.1002/adma.200802611.
Pełny tekst źródłaBohnen, Tim, Gerbe W. G. van Dreumel, Paul R. Hageman, Rienk E. Algra, Willem J. P. van Enckevort, Elias Vlieg, Marcel A. Verheijen i James H. Edgar. "Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE". physica status solidi (a) 206, nr 12 (14.08.2009): 2809–15. http://dx.doi.org/10.1002/pssa.200925060.
Pełny tekst źródłaWang, Yaxin, Yang Zou, Chao Gao, Xiyu Gu, Ye Ma, Yan Liu, Wenjuan Liu, Jeffrey Bo Woon Soon, Yao Cai i Chengliang Sun. "Effects of Electric Bias on Different Sc-Doped AlN-Based Film Bulk Acoustic Resonators". Electronics 11, nr 14 (11.07.2022): 2167. http://dx.doi.org/10.3390/electronics11142167.
Pełny tekst źródłaGillinger, Manuel, Theresia Knobloch, Michael Schneider i Ulrich Schmid. "Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire". Proceedings 1, nr 4 (17.08.2017): 341. http://dx.doi.org/10.3390/proceedings1040341.
Pełny tekst źródłaBartoli, Florian, Jérémy Streque, Jaafar Ghanbaja, Philippe Pigeat, Pascal Boulet, Sami Hage-Ali, Natalya Naumenko, A. Redjaïmia, Thierry Aubert i Omar Elmazria. "Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications". Sensors 20, nr 16 (17.08.2020): 4630. http://dx.doi.org/10.3390/s20164630.
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