Gotowa bibliografia na temat „RF Plasma CVD”
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Artykuły w czasopismach na temat "RF Plasma CVD"
Hay, Stephen O., Ward C. Roman i Meredith B. Colket. "CVD diamond deposition processes investigation: CARS diagnostics/modeling". Journal of Materials Research 5, nr 11 (listopad 1990): 2387–97. http://dx.doi.org/10.1557/jmr.1990.2387.
Pełny tekst źródłaYAMAMOTO, Masaoki, Masayuki FUKUI i Takayuki SHIBATA. "Properties of carbonous films synthesized by RF plasma CVD." Journal of the Japan Society for Precision Engineering 55, nr 12 (1989): 2222–27. http://dx.doi.org/10.2493/jjspe.55.2222.
Pełny tekst źródłaMannan, Md Abdul, Masamitsu Nagano, Norie Hirao i Yuji Baba. "Hexagonal BCN Films Prepared by RF Plasma-enhanced CVD". Chemistry Letters 37, nr 1 (5.01.2008): 96–97. http://dx.doi.org/10.1246/cl.2008.96.
Pełny tekst źródłaTSAKADZE, E., K. OSTRIKOV, Z. TSAKADZE, N. JIANG, R. AHMAD i S. XU. "CONTROL AND DIAGNOSTICS OF INDUCTIVELY COUPLED PLASMAS FOR CHEMICAL VAPOUR DEPOSITION ON NANOCOMPOSITE CARBON NITRIDE-BASED FILMS". International Journal of Modern Physics B 16, nr 06n07 (20.03.2002): 1143–47. http://dx.doi.org/10.1142/s0217979202011019.
Pełny tekst źródłaInao, Takuro, Masahiko Kumadaki, Kohki Satoh, Masaki Yoshino i Hidenori Itoh. "Deposition of Boron Nitride Films using RF Plasma CVD Method". IEEJ Transactions on Fundamentals and Materials 134, nr 6 (2014): 397–401. http://dx.doi.org/10.1541/ieejfms.134.397.
Pełny tekst źródłaKashem, Abul, Masaki Matsushita i Shinzo Morita. "RF Plasma CVD of C-S Compound under Hydrogen Dilution". Journal of Photopolymer Science and Technology 13, nr 1 (2000): 47–49. http://dx.doi.org/10.2494/photopolymer.13.47.
Pełny tekst źródłaJie, Jiang, i Liu Chenzan. "Diamond-like carbon thin films prepared by rf-plasma CVD". Vacuum 42, nr 16 (1991): 1058. http://dx.doi.org/10.1016/0042-207x(91)91327-k.
Pełny tekst źródłaMITSUI, Akira, i Akio KATO. "Preparation of SiC Powders by CVD Method Using RF-Plasma". Journal of the Ceramic Association, Japan 94, nr 1089 (1986): 517–20. http://dx.doi.org/10.2109/jcersj1950.94.1089_517.
Pełny tekst źródłaMitomo, Tohru, Tomohiro Ohta, Hiroaki Sasaki, Kenichi Ohtsuka i Yasuhiro Habu. "Deposition of amorphous-carbon films by RF plasma CVD method." KAGAKU KOGAKU RONBUNSHU 17, nr 2 (1991): 305–12. http://dx.doi.org/10.1252/kakoronbunshu.17.305.
Pełny tekst źródłaMitsui, Akira, i Akio Kato. "Preparation of SiC powders by CVD method using RF-plasma". International Journal of High Technology Ceramics 3, nr 1 (styczeń 1987): 85. http://dx.doi.org/10.1016/0267-3762(87)90071-3.
Pełny tekst źródłaRozprawy doktorskie na temat "RF Plasma CVD"
Bránecký, Martin. "Tenké vrstvy připravené v RF doutnavém výboji a jejich fyzikálně-chemické vlastnosti". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221284.
Pełny tekst źródłaOrlandi, Francesco. "Applicazione e Confronto di Modelli Computazionali Turbolenti per l'Analisi dei Fenomeni Fluidodinamici in Camera di Reazione di una Sorgente di Plasma Termico di Tipo ICP-RF per la Produzione di Nanoparticelle". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019.
Znajdź pełny tekst źródłaChang-WeiChen i 陳昶瑋. "Microwave Plasma CVD Nanodiamond and Its Application to RF MEMS Capacitive Switches". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/02237981579789795565.
Pełny tekst źródła國立成功大學
微電子工程研究所碩博士班
98
In this research, we deposit nanodiamond films by Microwave Plasma Chemical Vapor Deposition. Nanodiamond used as dielectric layer of RF MEMS capacitive switches. The major problem need to be solved is charging effect, and it also limit the life time of switches. After operation many times, switches would induce pull-in voltage shift and stiction problem. We use nanodiamond films as dielectric material to prevent the charging effect of switches. We controlled graphite phase concentration of nanodiamond films by using different growth conditions to lower dc resistivity. It can allow charges to escape from dielectric layers quickly and increase the reliability of switches. In order to find the best growth condition of nanodiamond films for switches, we analyzed nanodiamond films by some equipment, including Raman spectrum, Scanning Electron Microscope and Atomic Force Microscope..We fabricated MIM capacitors by Si3N4 and nanodiamond to perform DC measurement and transient current measurements. We designed four structures of RF MEMS capacitive switches and analyzed their pull-in voltage and capacitance ratio by C-V measurement. Additionally, we discussed about actuation properties and charging effect of switches with Si3N4 and nanodiamond as dielectric, respectively.
Streszczenia konferencji na temat "RF Plasma CVD"
Vikharev, A. "Investigation of the Millimeter-Wave Plasma Assisted CVD Reactor". W HIGH ENERGY DENSITY AND HIGH POWER RF: 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158797.
Pełny tekst źródłaJiang, Jie, i Chen Z. Liu. "Diamond-like carbon thin films prepared by rf-plasma CVD". W Shanghai - DL tentative, redaktorzy Shixun Zhou i Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47311.
Pełny tekst źródłaTakechi, Kazushige, Hiroyuki Uchida, Hiroshi Hayama Akira Kodama i Yoshimi Watabe. "A-Si:H TFTs Fabricated with Gated rf-discharge Plasma-CVD Technology". W 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.lc-8.
Pełny tekst źródłaATAEV, B. M., A. M. BAGAMADOVA, I. K. KAMILOV, V. V. MAMEDOV, A. K. OMAEV i S. SH MAKHMUDOV. "LOW-TEMPERATURE CVD GROWTH OF ZnO FILMS STIMULATED BY RF-DISCHARGE PLASMA". W Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0032.
Pełny tekst źródłaHa, Peter C. T., D. R. McKenzie, M. M. M. Bilek, E. D. Doyle i P. K. Chu. "Intrinsic Stress of DLC Film Prepared by RF Plasma CVD and Filteredcathodic ARC PVD". W IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science. IEEE, 2005. http://dx.doi.org/10.1109/plasma.2005.359498.
Pełny tekst źródłaIkeda, Kishimoto, Hirose i Numasawa. ""TOP-PECVD": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma". W Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307362.
Pełny tekst źródłaHiramatsu, M., K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori i T. Goto. "Diamond film formation using RF plasma CVD assisted by water vapor enhanced hydrogen radical source". W International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531623.
Pełny tekst źródłaRivero III, Jose. "CNT Metamaterial Fabrication 3D Printing Mask Process". W MME Undergraduate Research Symposium. Florida International University, 2022. http://dx.doi.org/10.25148/mmeurs.010567.
Pełny tekst źródłaRavera, G. L., S. Ceccuzzi, A. Cardinali, R. Cesario, F. Mirizzi, G. Schettini i A. A. Tuccillo. "Thin CVD-diamond RF Pill-Box vacuum windows for LHCD systems". W RADIOFREQUENCY POWER IN PLASMAS: Proceedings of the 20th Topical Conference. American Institute of Physics, 2014. http://dx.doi.org/10.1063/1.4864592.
Pełny tekst źródłaMostaghimi, Javad, Sanaz Arabzadeh Esfarjani, Seth Dworkin, Benoit Simard, Keun Su Kim, Gervais Soucy i Ali Shahverdi. "CFD Simulation of Single-walled Carbon Nanotube Growth in an RF Induction Thermal Plasma Process". W 42nd AIAA Plasmadynamics and Lasers Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2011. http://dx.doi.org/10.2514/6.2011-3600.
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