Artykuły w czasopismach na temat „Resistive memories (RRAMs)”
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Kim, Kyoungdu, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang i Jaewon Jang. "Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory". Materials Research Express 8, nr 11 (1.11.2021): 116301. http://dx.doi.org/10.1088/2053-1591/ac3400.
Pełny tekst źródłaLin, Wu i Chen. "Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories". Crystals 9, nr 6 (19.06.2019): 318. http://dx.doi.org/10.3390/cryst9060318.
Pełny tekst źródłaAguilera-Pedregosa, Cristina, David Maldonado, Mireia B. González, Enrique Moreno, Francisco Jiménez-Molinos, Francesca Campabadal i Juan B. Roldán. "Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories". Micromachines 14, nr 3 (10.03.2023): 630. http://dx.doi.org/10.3390/mi14030630.
Pełny tekst źródłaArumí, Daniel, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Víctor Montilla, David Hernández, Mireia Bargalló González i Francesca Campabadal. "Impact of Laser Attacks on the Switching Behavior of RRAM Devices". Electronics 9, nr 1 (20.01.2020): 200. http://dx.doi.org/10.3390/electronics9010200.
Pełny tekst źródłaAnsh i Mayank Shrivastava. "Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process". Journal of Physics D: Applied Physics 55, nr 8 (12.11.2021): 085102. http://dx.doi.org/10.1088/1361-6463/ac3281.
Pełny tekst źródłaShu, Pan, Xiaofei Cao, Yongqiang Du, Jiankui Zhou, Jianjun Zhou, Shengang Xu, Yingliang Liu i Shaokui Cao. "Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite". Journal of Materials Chemistry C 8, nr 37 (2020): 12865–75. http://dx.doi.org/10.1039/d0tc02579h.
Pełny tekst źródłaAlimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim i Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode". Nanomaterials 10, nr 9 (20.08.2020): 1634. http://dx.doi.org/10.3390/nano10091634.
Pełny tekst źródłaVasileiadis, Nikolaos, Vasileios Ntinas, Georgios Ch Sirakoulis i Panagiotis Dimitrakis. "In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor". Materials 14, nr 18 (10.09.2021): 5223. http://dx.doi.org/10.3390/ma14185223.
Pełny tekst źródłaPoddar, Swapnadeep, Yuting Zhang, Zhesi Chen, Zichao Ma i Zhiyong Fan. "(Digital Presentation) Resistive Switching and Brain-Inspired Computing in Perovskite Nanowires and Quantum Wires". ECS Meeting Abstracts MA2022-02, nr 36 (9.10.2022): 1336. http://dx.doi.org/10.1149/ma2022-02361336mtgabs.
Pełny tekst źródłaMinguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse i in. "OxRAM + OTS optimization for binarized neural network hardware implementation". Semiconductor Science and Technology 37, nr 1 (8.12.2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.
Pełny tekst źródłaAli, Sarfraz, Muhammad Abaid Ullah, Ali Raza, Muhammad Waqas Iqbal, Muhammad Farooq Khan, Maria Rasheed, Muhammad Ismail i Sungjun Kim. "Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing". Nanomaterials 13, nr 17 (28.08.2023): 2443. http://dx.doi.org/10.3390/nano13172443.
Pełny tekst źródłaArashloo, Banafsheh Alizadeh. "Cupper doping effect on the electrical characteristics of TiO2 based Memristor". Brilliant Engineering 2, nr 1 (10.06.2020): 19–24. http://dx.doi.org/10.36937/ben.2021.001.004.
Pełny tekst źródłaWANG, SHENG-YU, i TSEUNG-YUEN TSENG. "INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES". Journal of Advanced Dielectrics 01, nr 02 (kwiecień 2011): 141–62. http://dx.doi.org/10.1142/s2010135x11000306.
Pełny tekst źródłaQian, Kai, Viet Cuong Nguyen, Tupei Chen i Pooi See Lee. "Novel concepts in functional resistive switching memories". Journal of Materials Chemistry C 4, nr 41 (2016): 9637–45. http://dx.doi.org/10.1039/c6tc03447k.
Pełny tekst źródłaChen, Tong, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu i Ling Xu. "Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current". Nanomaterials 13, nr 1 (24.12.2022): 85. http://dx.doi.org/10.3390/nano13010085.
Pełny tekst źródłaWan, Zhenni, Robert B. Darling i M. P. Anantram. "Vanadium Oxide Based RRAM Device". MRS Advances 2, nr 52 (2017): 3019–24. http://dx.doi.org/10.1557/adv.2017.442.
Pełny tekst źródłaDash, C. S., i S. R. S. Prabaharan. "Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)". Nanoscience & Nanotechnology-Asia 9, nr 4 (25.11.2019): 444–61. http://dx.doi.org/10.2174/2210681208666180621095241.
Pełny tekst źródłaMolas, Gabriel, Gilbert Sassine, Cecile Nail, Diego Alfaro Robayo, Jean-François Nodin, Carlo Cagli, Jean Coignus, Philippe Blaise i Etienne Nowak. "(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions". ECS Transactions 86, nr 3 (20.07.2018): 35–47. http://dx.doi.org/10.1149/08603.0035ecst.
Pełny tekst źródłaLee, Yunseok, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung i Sungjun Kim. "Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices". Materials 15, nr 21 (26.10.2022): 7520. http://dx.doi.org/10.3390/ma15217520.
Pełny tekst źródłaKoohzadi, Pooria, Mohammad Taghi Ahmadi, Javad Karamdel i Truong Khang Nguyen. "Graphene band engineering for resistive random-access memory application". International Journal of Modern Physics B 34, nr 18 (10.07.2020): 2050171. http://dx.doi.org/10.1142/s0217979220501714.
Pełny tekst źródłaPérez, Eduardo, Florian Teply i Christian Wenger. "Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices". MRS Advances 2, nr 4 (12.12.2016): 223–28. http://dx.doi.org/10.1557/adv.2016.616.
Pełny tekst źródłaWang, Li-Wen, Chih-Wei Huang, Ke-Jing Lee, Sheng-Yuan Chu i Yeong-Her Wang. "Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing". Nanomaterials 13, nr 12 (13.06.2023): 1851. http://dx.doi.org/10.3390/nano13121851.
Pełny tekst źródłaYalon, E., I. Karpov, V. Karpov, I. Riess, D. Kalaev i D. Ritter. "Detection of the insulating gap and conductive filament growth direction in resistive memories". Nanoscale 7, nr 37 (2015): 15434–41. http://dx.doi.org/10.1039/c5nr03314d.
Pełny tekst źródłaNapolean, A., N. M. Sivamangai, S. Rajesh, R. Naveenkumar, N. Sharon, N. Nithya i S. Kamalnath. "Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation". ECS Journal of Solid State Science and Technology 11, nr 2 (1.02.2022): 023012. http://dx.doi.org/10.1149/2162-8777/ac557b.
Pełny tekst źródłaYang, Seyeong, Jongmin Park, Youngboo Cho, Yunseok Lee i Sungjun Kim. "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process". International Journal of Molecular Sciences 23, nr 21 (31.10.2022): 13249. http://dx.doi.org/10.3390/ijms232113249.
Pełny tekst źródłaZhang, Donglin, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han i in. "Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes". Micromachines 12, nr 8 (30.07.2021): 913. http://dx.doi.org/10.3390/mi12080913.
Pełny tekst źródłaRuiz-Castro, Juan E., Christian Acal, Ana M. Aguilera i Juan B. Roldán. "A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories". Mathematics 9, nr 4 (16.02.2021): 390. http://dx.doi.org/10.3390/math9040390.
Pełny tekst źródłaLahbacha, Khitem, Fakhreddine Zayer, Hamdi Belgacem, Wael Dghais i Antonio Maffucci. "Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures". IEEE Open Journal of Nanotechnology 2 (2021): 111–19. http://dx.doi.org/10.1109/ojnano.2021.3124846.
Pełny tekst źródłaLa Torraca, Paolo, Francesco Maria Puglisi, Andrea Padovani i Luca Larcher. "Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory". Materials 12, nr 21 (23.10.2019): 3461. http://dx.doi.org/10.3390/ma12213461.
Pełny tekst źródłaKhan, Mohammad Nasim Imtiaz, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay i Swaroop Ghosh. "Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, nr 4 (28.09.2021): 38. http://dx.doi.org/10.3390/jlpea11040038.
Pełny tekst źródłaHuang, Yanzi, Lingyu Wan, Jiang Jiang, Liuyan Li i Junyi Zhai. "Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator". Nanomaterials 12, nr 13 (27.06.2022): 2199. http://dx.doi.org/10.3390/nano12132199.
Pełny tekst źródłaOtsus, Markus, Joonas Merisalu, Aivar Tarre, Anna-Liisa Peikolainen, Jekaterina Kozlova, Kaupo Kukli i Aile Tamm. "Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles". Electronics 11, nr 18 (19.09.2022): 2963. http://dx.doi.org/10.3390/electronics11182963.
Pełny tekst źródłaPérez, Eduardo, Óscar González Ossorio, Salvador Dueñas, Helena Castán, Héctor García i Christian Wenger. "Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays". Electronics 9, nr 5 (23.05.2020): 864. http://dx.doi.org/10.3390/electronics9050864.
Pełny tekst źródłaCario, Laurent, Cristian Vaju, Benoit Corraze, Vincent Guiot i Etienne Janod. "Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories". Advanced Materials 22, nr 45 (18.10.2010): 5193–97. http://dx.doi.org/10.1002/adma.201002521.
Pełny tekst źródłaKhan, Mohammad Nasim Imtiaz, i Swaroop Ghosh. "Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, nr 4 (24.09.2021): 36. http://dx.doi.org/10.3390/jlpea11040036.
Pełny tekst źródłaQuiroz, Heiddy P., Jorge A. Calderón i A. Dussan. "Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for Magnetic-Resistive Random Access Memories (M-RRAM)". Journal of Alloys and Compounds 840 (listopad 2020): 155674. http://dx.doi.org/10.1016/j.jallcom.2020.155674.
Pełny tekst źródłaMounica, J., i G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation". International Journal of Electrical and Computer Engineering (IJECE) 6, nr 3 (1.06.2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.9448.
Pełny tekst źródłaMounica, J., i G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation". International Journal of Electrical and Computer Engineering (IJECE) 6, nr 3 (1.06.2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.pp1183-1189.
Pełny tekst źródłaLi, Rongbin, Yan Sun, Qianyu Zhao, Xin Hao, Haowei Liang, Shengang Xu, Yingliang Liu, Xiaoman Bi i Shaokui Cao. "NIR-Triggered Logic Gate in MXene-Modified Perovskite Resistive Random Access Memory". Journal of Materials Chemistry C, 2024. http://dx.doi.org/10.1039/d3tc03847e.
Pełny tekst źródłaIelmini, Daniele, Federico Nardi, Carlo Cagli i Andrea L. Lacaita. "Size-dependent Temperature Instability in NiO–based Resistive Switching Memory". MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g05-03.
Pełny tekst źródła"Comprehensive Examination on Resistive Random Access Memory". International Journal of Recent Technology and Engineering 8, nr 4 (30.11.2019): 4663–67. http://dx.doi.org/10.35940/ijrte.d8398.118419.
Pełny tekst źródłaLi, Yang, Shahar Kvatinsky i Lior Kornblum. "Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories". Frontiers in Physics 9 (27.10.2021). http://dx.doi.org/10.3389/fphy.2021.772238.
Pełny tekst źródłaShen, Yang, He Tian, Yanming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xuefeng Wang i Tian-Ling Ren. "Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications". Frontiers in Physics 9 (24.12.2021). http://dx.doi.org/10.3389/fphy.2021.777691.
Pełny tekst źródłaYon, Victor, Amirali Amirsoleimani, Fabien Alibart, Roger G. Melko, Dominique Drouin i Yann Beilliard. "Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning". Frontiers in Electronics 3 (25.03.2022). http://dx.doi.org/10.3389/felec.2022.825077.
Pełny tekst źródłaVaccaro, Francesco, Stefano Brivio, Simona Perotto, Aurelio Giancarlo Mauri i Sabina Spiga. "Physics-based compact modelling of the analog dynamics of HfOx resistive memories". Neuromorphic Computing and Engineering, 25.05.2022. http://dx.doi.org/10.1088/2634-4386/ac7327.
Pełny tekst źródłaRocha, Paulo F., Henrique L. Gomes, Asal Kiazadeh, Qian Chen, Dago M. de Leeuw i Stefan C. J. Meskers. "Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor". MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.859.
Pełny tekst źródłaHyun, Gihwan, Batyrbek Alimkhanuly, Donguk Seo, Minwoo Lee, Junseong Bae, Seunghyun Lee, Shubham Patil i in. "CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin". Small, 12.04.2024. http://dx.doi.org/10.1002/smll.202310943.
Pełny tekst źródłaChoi, Hyun-Seok, Jihye Lee, Boram Kim, Jaehong Lee, Byung-Gook Park, Yoon Kim i Suck Won Hong. "Highly-packed Self-assembled Graphene Oxide Film-Integrated Resistive Random-Access Memory on a Silicon Substrate for Neuromorphic Application". Nanotechnology, 12.07.2022. http://dx.doi.org/10.1088/1361-6528/ac805d.
Pełny tekst źródłaXie, Maosong, Yueyang Jia, Chen Nie, Zuheng Liu, Alvin Tang, Shiquan Fan, Xiaoyao Liang, Li Jiang, Zhezhi He i Rui Yang. "Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory". Nature Communications 14, nr 1 (23.09.2023). http://dx.doi.org/10.1038/s41467-023-41736-2.
Pełny tekst źródłaXi, Zhao-Ying, Li-Li Yang, Lin-Cong Shu, Mao-Lin Zhang, Shan Li, Li Shi, Zeng Liu, Yu-Feng Guo i Wei-Hua Tang. "The growth and expansive applications of amorphous Ga2O3: a review". Chinese Physics B, 24.04.2023. http://dx.doi.org/10.1088/1674-1056/accf81.
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