Gotowe bibliografie tematyczne / Quantum dot

Gotowa bibliografia na temat „Quantum dot”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 7 lipca 2024

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Artykuły w czasopismach na temat "Quantum dot"

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Lavine, M. S. "From quantum dot to quantum dot". Science 353, nr 6302 (25.08.2016): i—884. http://dx.doi.org/10.1126/science.353.6302.882-i.

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Porod, Wolfgang. "Quantum-dot devices and Quantum-dot Cellular Automata". Journal of the Franklin Institute 334, nr 5-6 (wrzesień 1997): 1147–75. http://dx.doi.org/10.1016/s0016-0032(97)00041-0.

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Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata". International Journal of Bifurcation and Chaos 07, nr 10 (październik 1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.

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We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q-CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, and candidates for molecular implementations.
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Achermann, Marc, Sohee Jeong, Laurent Balet, Gabriel A. Montano i Jennifer A. Hollingsworth. "Efficient Quantum Dot−Quantum Dot and Quantum Dot−Dye Energy Transfer in Biotemplated Assemblies". ACS Nano 5, nr 3 (11.02.2011): 1761–68. http://dx.doi.org/10.1021/nn102365v.

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Bryant, G. W., i W. Jask�lski. "Designing Nanocrystal Nanosystems: Quantum-Dot Quantum-Wells to Quantum-Dot Solids". physica status solidi (b) 224, nr 3 (kwiecień 2001): 751–55. http://dx.doi.org/10.1002/(sici)1521-3951(200104)224:3<751::aid-pssb751>3.0.co;2-l.

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Müller-Kirsch, L., N. N. Ledentsov, R. Sellin, U. W. Pohl, D. Bimberg, I. Häusler, H. Kirmse i W. Neumann. "GaSb quantum dot growth using InAs quantum dot stressors". Journal of Crystal Growth 248 (luty 2003): 333–38. http://dx.doi.org/10.1016/s0022-0248(02)01895-x.

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Salama, Husien, Billel Smaani, Faouzi Nasri i Alain Tshipamba. "Nanotechnology and Quantum Dot Lasers". Journal of Computer Science and Technology Studies 5, nr 1 (16.03.2023): 45–51. http://dx.doi.org/10.32996/jcsts.2023.5.1.6.

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In this paper, we reviewed the recent literature on quantum dot lasers. First, we started with the physics of quantum dots. These nanostructures provide limitless opportunities to create new technologies. To understand the applications of quantum dots, we talked about the quantum confinement effect versus dimensionality and different fabrication techniques of quantum dots. Secondly, we examined the physical properties of quantum dot lasers along with the history and development of quantum dot laser technology and different kinds of quantum dot lasers compared with other types of lasers. Thirdly, we made a market search on the practical usage of quantum dot lasers. Lastly, we predicted a future for quantum dot lasers.
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Wang, Yuhao. "CsPbX3 Perovskite Quantum Dot Laser". Highlights in Science, Engineering and Technology 27 (27.12.2022): 334–42. http://dx.doi.org/10.54097/hset.v27i.3775.

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Quantum dot laser, which is well known as the 3rd generation of semiconductor laser, has attracted extensive attention of researchers in recent years. Compared with typical semiconductor laser, quantum dot exhibits the characteristics of low threshold, large laser gain, tunable bandgap, which make it promising for laser applications. Among the various quantum dot lasers, perovskite quantum dot laser is one superior type. Perovskite is a group of material with the structure of ABX3. This group of material is commonly used in solar cell and light emitting device such as perovskite quantum dot blue emitting diode, due to its excellent optical properties of narrow linewidth and high luminance. The perovskite quantum is also found to be a good material of laser gain material. Among all classes of perovskite, CsPbX3 has become an expected material for perovskite quantum dot laser. This work will conclude the theory of quantum dot laser and properties of CsPbX3 quantum dot laser based on current papers and reports.
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Fengjiao Wang, Fengjiao Wang, Ning Zhuo Ning Zhuo, Shuman Liu Shuman Liu, Fei Ren Fei Ren, Shenqiang Zhai Shenqiang Zhai, Junqi Liu Junqi Liu, Jinchuan Zhang Jinchuan Zhang, Fengqi Liu Fengqi Liu i Zhanguo Wang Zhanguo Wang. "Quantum dot quantum cascade photodetector using a laser structure". Chinese Optics Letters 15, nr 10 (2017): 102301. http://dx.doi.org/10.3788/col201715.102301.

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Weiss, Peter. "Quantum-Dot Leap". Science News 169, nr 22 (3.06.2006): 344. http://dx.doi.org/10.2307/4019198.

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Rozprawy doktorskie na temat "Quantum dot"

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Patel, Robin. "Quantum dot lasers". Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:47b97874-65c0-41e5-afce-debd778e1fc5.

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Here we present direct investigation of the lasing behaviour by performing gain spectroscopy of solution-based CQDs enabled via in-situ tuning of the feedback wavelength of an open-access hemispherical microcavity. The investigation is performed on two different types of CQDs, namely spherical CdSe/CdS core-shell CQDs and nanopletelets (NPs). The lasing threshold and the differential gain/slope efficiency of the fundamental cavity mode are measured as a function of their spectral position over a spectral range of ∼ 32 nm and of ∼ 42 nm for the spherical CQDs and NPs, respectively. The results of the gain spectroscopy are described using theoretical models, providing insights into the mechanism governing the observed lasing behaviour. Furthermore, the open-access cavity architecture provides a very convenient way of producing in-situ tunable lasing, and single-mode lasing of the fundamental cavity mode over a spectral range of ∼ 25 nm and ∼ 37 nm is demonstrated using spherical CQDs and NPs, respectively. In addition, the stability of laser emission is investigated, with the lasing intensity of the fundamental cavity mode remaining constant over a time period of almost 6 mins. It is hoped that the results will provide a detailed understanding of the lasing behaviour of CQDs. This information can be fed back into the design of CQDs in which the lasing threshold can be reduced to the point where useful devices can be constructed, and in the design of resonant optical feedback structures for which the appropriate wavelength must be carefully selected.
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Kruppa, Suzanne L. "Modeling the quantum dot". Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1997. http://handle.dtic.mil/100.2/ADA333891.

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Hinzer, Karin. "Semiconductor quantum dot lasers". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0003/MQ36702.pdf.

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Martins, Luis. "Quantum dot-cavity systems". Thesis, University of Sheffield, 2017. http://etheses.whiterose.ac.uk/18277/.

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This thesis presents experiments carried out on a single InGaAs/GaAs quantum dot coupled with a photonic crystal cavity (H1). The single exciton qubit system is controlled by ultrafast optical pulses. Then, the resonance fluorescence (RF), which is proportional to the population of the quantum dot, is measured by a spectrometer. The two main results of the whole thesis are: i) measurement of the short exciton lifetime (22.7~ps); ii) achievement of full populated quantum dot through a few photons (on average approx. 2.5 photons). To measure such a short lifetime the Two Pulse Resonance Fluorescence technique was developed. This technique enables measurements with high time resolution. This required the development of the Differential Resonance Fluorescence technique. This technique is highly efficient in suppressing the laser scattered light, permitting measurements of the RF of the dot. These two main results are the consequence of cavity enhancement. A Purcell factor of 42 was measured. This is the largest Purcell factor reported so far for the weak coupling regime. This enhancement allows the recovery of the coherence of the QD, permitting the investigation of the quantum dot--cavity system as a near--ideal single photon source on--chip and on--demand. The cavity enhancement also affects the exciton--phonon interaction. The full monotonic phonon side band is here presented for first time. This quantum dot--cavity system also allows the control of the cavity scattered light from the quantum dot. This can be used as an ultrafast switcher.
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Murphy, Helen Marie. "Quantum transport in superlattice and quantum dot structures". Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364637.

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Woodhouse, Michael. "Quantum dot ensembles as an optical quantum memory". Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/11843/.

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In this Ph.D. Thesis we investigate the viability of using quantum dot ensembles as a quantum memory architecture through the use numerical simulations to study population transfer within quantum dots. This is followed by an investigation into the effects of high order wavemixing on the population transfer within two level systems, which was born from effects noted while simulating quantum dots. We study the initialisation of an ensemble of inhomogeneously broadened quantum dots, introducing a novel initialisation method utilising pump field with a slow frequency sweep. We focus on the properties of such an initialisation procedure and conclude that the maximum initialisation fidelities are determined entirely by the Zeeman splittings and decay rates of the quantum dots. We study several possibilities for performing π rotations on the population of an ensemble of quantum dots, and show the RCAP protocol is the most applicable. We study this protocol in the context of quantum dots and give the optimal parameters to use to generate high fidelity π pulses. We then bring together our work on quantum dots population transfer with the work of others covering the write and read procedures on quantum dots to provide a feasibility analysis of the complete quantum memory protocol. The work on wavemixing presented in this thesis uses a novel approach to analyse wavemixing effects which is used to predict the population transferred in two level simulations of wavemixing processes. We provide simulation confirmation of our approach to analyse wavemixing effects and then go on to calculate the disruptive effects of wavemixing caused by high intensity lasers on some simple systems. Finally we show that large orders of wavemixing can, at least in principle, be used for coherent population transfer.
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Lumb, Matthew. "Quantum dot saturable absorber mirrors". Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.504906.

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Arango, Alexi Cosmos 1975. "A quantum dot heterojunction photodetector". Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/27869.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 113-119).
This thesis presents a new device architecture for photodetectors utilizing colloidally grown quantum dots as the principle photo-active component. We implement a thin film of cadmium selenide (CdSe) quantum dot sensitizers, sandwiched between an electron-transporting titanium dioxide (TiO2) layer and a hole-transporting N,N' diphenyl-N,N' bis(3-ethylphenyl)-(1,1'-biphenyl)- 4,4'-diamine (TPD) organic small molecule layer. The wide band gap TiO2 and TPD layers are found to block charge injection under reverse bias, yet serve as transport layers for photo-excited charge generated in the CdSe. The internal quantum efficiency is approximately 1% at zero bias and saturates at 3% at -1V. Current-voltage sweeps yield low dark current in reverse bias and significant hysteresis under illumination. We speculate that the hysteresis and low quantum efficiency are due to charge accumulation at the TiO2/CdSe interface.
by Alexi Cosmos Arango.
S.M.
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Spencer, Peter David. "Quantum dot bilayer laser diodes". Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/1413.

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Optical communication was developed to allow high-speed and long-distance data transmission and is currently a £6bn market. This has also led to the adoption of optical technologies in other areas including the CD, DVD and medical imaging systems. Standardisation of components means that these systems require light sources that operate near the 1310 and 1550 nm telecommunications windows but existing lasers here are expensive due to their high temperature sensitivity. The exploitation of quantum con¯nement has led to the development of \quan- tum dot" (QD) laser material because of predictions of huge gains in performance. Emission wavelengths of InAs/GaAs QD lasers have been extended to the telecom- munications window near 1300 nm by various growth technologies and the first commercial devices have recently been brought to the market. However, progress to longer wavelengths has been stalled for several years as well as the speed and tem- perature sensitivity of these devices falling short of the predictions; partly because QDs are grown by self-assembly resulting in a random distribution of sizes, compo- sitions and strain-states, leading to inhomogeneous broadening which is a departure from the ideal \atom-like" system. This work details the growth, design and development of QD bilayer laser devices, which o®er a unique approach to fixing these shortcomings. When two QD layers are grown close together; the first layer provides a template that allows larger, more uniform QDs to be grown in the second layer, giving greater uniformity and deeper confinement. This has the potential to increase the efficiency and to achieve emission wavelengths out towards the more-commonly used telecommunications window at 1550 nm directly on GaAs substrates. Multiple bilayer laser diodes with inhomge- neous broadening of less than 30meV, lasing at up to 1430 nm and room-temperature photoluminescence at 1515 nm are shown. Despite the vastly reduced inhomogeneous broadening of QD bilayers, it is still found to be a relevant factor due to the change from de-localised geometries of quantum wells to an ensemble of separate QDs. It will be shown that understanding this is essential for describing the observed optical and electrical behaviour of the laser diodes.
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Zhang, Nanlin. "Collodial quantum dot solar cells". Thesis, University of Oxford, 2017. http://ora.ox.ac.uk/objects/uuid:76dd4ff5-abc6-4f47-91d1-8cdc65362b12.

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This thesis presents three specific strategies to enhance colloidal quantum dot (CQD) solar cells' performances, including band alignment engineering, quantum dot passivation, and smart device architecture design. Firstly, by inserting a PbS CQD layer with a relatively smaller band gap as the hole transport layer (HTL), the carrier extraction of the solar cells is much improved, so as the efficiency. The improvement is due to a better interfacial band alignment between the HTLs and the absorber layer, proved by Kelvin probe and cyclic voltammetry results. Small band gap PbS CQDs have deeper Fermi levels because of the easy oxidation. Coupled with a p-type inducing ligand, 1,2-ethanedithiol (EDT), a better valence band alignment is achieved to extract the holes more efficiently. Secondly, alcohol-dissolvable CsI is used as the ligands to passivate QDs' surface with the aim of reducing dangling bonds and defects on the surface. Compared to the commonly used ligand, tetrabutylammonium iodide (TBAI), CsI resulted in better passivation, which was proved by the full ligand exchange, a narrow photoluminescence peak, fewer oxide defects, and the existence of Cs-S bond. A high efficiency of 10% is achieved, which is attributed to that fewer defects and better passivation lead to larger depletion region pushing its optimal thickness and current output higher, as well as the efficiency. Thirdly, a microgroove-structured flexible PbS CQD micro-module solar cell is reported for the first time with a record Voc of 9.2 V. This device was fabricated by automatic dip coating methods, and it avoids the complex recombination layers required in monolithic tandem devices. By e-beam depositing two electrodes on the two walls of the V-shape grooves, devices were connected in series in less than 100 Î1⁄4m width. By using three-dimensional characterisations, the reasons for low efficiency were explained.
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Książki na temat "Quantum dot"

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Tong, Xin, Jiang Wu i Zhiming M. Wang, red. Quantum Dot Photodetectors. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-74270-6.

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Wu, Jiang, i Zhiming M. Wang, red. Quantum Dot Molecules. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-8130-0.

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Wang, Zhiming M., red. Quantum Dot Devices. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-3570-9.

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service), SpringerLink (Online, red. Quantum Dot Devices. New York, NY: Springer New York, 2012.

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M, Ustinov Victor, red. Quantum dot lasers. Oxford: Oxford University Press, 2003.

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Kruppa, Suzanne L. Modeling the quantum dot. Monterey, Calif: Naval Postgraduate School, 1997.

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Wu, Jiang, i Zhiming M. Wang, red. Quantum Dot Solar Cells. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-8148-5.

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Yu, Peng, i Zhiming M. Wang, red. Quantum Dot Optoelectronic Devices. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35813-6.

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Otto, Christian. Dynamics of Quantum Dot Lasers. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03786-8.

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Dong, Bozhang. Quantum Dot Lasers on Silicon. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-17827-6.

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Części książek na temat "Quantum dot"

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Chon, Chan Hee, i Dongqing Li. "Quantum Dot". W Encyclopedia of Microfluidics and Nanofluidics, 2905–7. New York, NY: Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4614-5491-5_1325.

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Chon, Chan Hee, i Dongqing Li. "Quantum Dot". W Encyclopedia of Microfluidics and Nanofluidics, 1–3. Boston, MA: Springer US, 2014. http://dx.doi.org/10.1007/978-3-642-27758-0_1325-2.

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Lin, Lih Y., Wafa’ T. Al-Jamal i Kostas Kostarelos. "Quantum Dot". W Encyclopedia of Nanotechnology, 2187. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100693.

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Bhattacherjee, Aranya B., i Suman Dudeja. "Quantum Dot". W New Frontiers in Nanochemistry, 471–73. Includes bibliographical references and indexes. | Contents: Volume 1. Structural nanochemistry – Volume 2. Topological nanochemistry – Volume 3. Sustainable nanochemistry.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429022937-42.

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Al-Jama1, Wafa’ T., i Kostas Kostarelos. "Quantum Dot Toxicity". W Encyclopedia of Nanotechnology, 3399–403. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_179.

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Hogg, Richard A., i Ziyang Zhang. "Quantum Dot Technologies". W The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics, 7–42. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527665587.ch1.

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Lin, Lih Y., Wafa’ T. Al-Jamal i Kostas Kostarelos. "Quantum-Dot Toxicity". W Encyclopedia of Nanotechnology, 2197–200. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_179.

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Schweizer, H., J. Wang, U. Griesinger, M. Burkard, J. Porsche, M. Geiger, F. Scholz, T. Riedl i A. Hangleiter. "Quantum Dot Lasers". W Frontiers of Nano-Optoelectronic Systems, 65–84. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0890-7_5.

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Schweizer, Heinz, Michael Jetter i Ferdinand Scholz. "Quantum-Dot Lasers". W Topics in Applied Physics, 185–236. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-39180-7_5.

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Gies, Christopher, Michael Lorke, Frank Jahnke i Weng W. Chow. "Quantum-Dot Nanolasers". W Handbook of Optoelectronic Device Modeling and Simulation, 627–60. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.4324/9781315152318-23.

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Streszczenia konferencji na temat "Quantum dot"

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Schmidt, O. G., A. Rastelli, S. Kiravittaya, L. Wang, M. Stoffel, G. J. Beirne, C. Hermannstaedter i P. Michler. "Quantum Dots, Quantum Dot Molecules, and Quantum Dot Crystals". W 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.f-3-1.

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Giesz, Valérian, Niccolo Somaschi, Lorenzo De Santis, Simone Luca Portalupi, Christophe Arnold, Olivier Gazzano, Anna Nowak i in. "Quantum dot based quantum optics". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/iprsn.2015.is4a.3.

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Reitzenstein, S., C. Kistner, S. Münch, T. Heindel, C. Schneider, M. Strauss, A. Rahimi-Iman, S. Höfling, M. Kamp i A. Forchel. "Quantum Dot Microlasers". W Asia Communications and Photonics Conference and Exhibition. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/acp.2009.fb2.

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Coleman, James J. "Quantum Dot Devices". W European Conference and Exposition on Optical Communications. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/ecoc.2011.tu.6.lesaleve.3.

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Ledentsov, N. N. "Quantum dot VCSELs". W 1999 Digest of the LEOS Summer Topical Meetings: Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems (Cat. No.99TH8455). IEEE, 1999. http://dx.doi.org/10.1109/leosst.1999.794637.

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Fafard, Simon, Hui C. Liu, Zbigniew R. Wasilewski, John P. McCaffrey, M. Spanner, Sylvain Raymond, C. N. Allen i in. "Quantum dot devices". W Photonics Taiwan, redaktorzy Yan-Kuin Su i Pallab Bhattacharya. SPIE, 2000. http://dx.doi.org/10.1117/12.392130.

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LEOSSON, KRISTJAN. "QUANTUM DOT SPECTROSCOPY". W Proceedings of the 16th Course of the International School of Atomic and Molecular Spectroscopy. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810960_0030.

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Sarangapani, Prasad, Daniel Mejia, James Charles, Woody Gilbertson, Hesameddin Ilatikhameneh, Tarek Ameen, Andrew Roche, James Fonseca i Gerhard Klimeck. "Quantum dot lab: an online platform for quantum dot simulations". W 2015 International Workshop on Computational Electronics (IWCE). IEEE, 2015. http://dx.doi.org/10.1109/iwce.2015.7301982.

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Liu, Sheng, Binsong Li, Ting Shan Luk, Hongyou Fan, Igal Brener i Michael B. Sinclair. "Investigation of Quantum Dot—Quantum Dot Coupling at High Hydrostatic Pressure". W CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_qels.2014.fth4c.3.

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Zimmerman, Neil. "Quantum simulation using quantum dot arrays". W 2018 NIST Workshop. WORLD SCIENTIFIC, 2019. http://dx.doi.org/10.1142/9789811206061_0011.

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Raporty organizacyjne na temat "Quantum dot"

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Pezzaniti, Larry, Sanjay Krishna i Payman Zarkesh-Ha. Quantum DOT IR Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, lipiec 2012. http://dx.doi.org/10.21236/ada580397.

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Mainieri, R., P. Cvitanovic i B. Hasslacher. Hard chaos, quantum billiards, and quantum dot computers. Office of Scientific and Technical Information (OSTI), lipiec 1996. http://dx.doi.org/10.2172/263990.

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Keith Kahen. Quantum Dot Light Emitting Diode. Office of Scientific and Technical Information (OSTI), lipiec 2008. http://dx.doi.org/10.2172/1053781.

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Kahen, Keith. Quantum Dot Light Emitting Diode. Office of Scientific and Technical Information (OSTI), lipiec 2008. http://dx.doi.org/10.2172/1072973.

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van der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, marzec 2021. http://dx.doi.org/10.53109/ypdh3824.

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Streszczenie:
The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both the low frequency and radio frequency noise. Ultimately, for high performance filters the electron temperature can approach the phonon temperature (as measured by resistive thermometers) in a dilution refrigerator. In this application note, the method for measuring the electron temperature in a typical quantum electronics device using Coulomb blockade thermometry is described. This technique is applied to find the readily achievable electron temperature in the device when using the QFilter provided by QDevil. With our thermometry measurements, using a single GaAs/AlGaAs quantum dot in an optimized experimental setup, we determined an electron temperature of 28 ± 2 milli-Kelvin for a dilution refrigerator base temperature of 18 milli-Kelvin.
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Steel, Duncan G. Quantum Entanglement of Quantum Dot Spin Using Flying Qubits. Fort Belvoir, VA: Defense Technical Information Center, maj 2015. http://dx.doi.org/10.21236/ada623828.

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Meier, Kristina. Quantum at LANL Quantum Ghost Imaging and Quantum Dot Single-Photon Sources. Office of Scientific and Technical Information (OSTI), styczeń 2023. http://dx.doi.org/10.2172/1921988.

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Kahen, Keith. High Efficiency Colloidal Quantum Dot Phosphors. Office of Scientific and Technical Information (OSTI), grudzień 2013. http://dx.doi.org/10.2172/1133416.

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Deppe, Dennis G. Mid-Infrared Quantum Dot Cascade Lasers. Fort Belvoir, VA: Defense Technical Information Center, listopad 2005. http://dx.doi.org/10.21236/ada447301.

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Ryan, Duncan Patrick. Energy Flow through Quantum Dot Networks. Office of Scientific and Technical Information (OSTI), czerwiec 2018. http://dx.doi.org/10.2172/1441357.

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