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Artykuły w czasopismach na temat „Processing of organic semiconducting thin films”

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Data publikacji: 25 maja 2024

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1

Harding, Cayley R., Jonathan Cann, Audrey Laventure, Mozhgan Sadeghianlemraski, Marwa Abd-Ellah, Keerthan R. Rao, Benjamin Sidney Gelfand i in. "Acid dyeing for green solvent processing of solvent resistant semiconducting organic thin films". Materials Horizons 7, nr 11 (2020): 2959–69. http://dx.doi.org/10.1039/d0mh00785d.

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Pickett, Alec, Aiswarya A. Mohapatra, Suman Ray, Christopher Robledo, Kartik Ghosh, Satish Patil i Suchismita Guha. "Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors". MRS Advances 4, nr 31-32 (2019): 1793–800. http://dx.doi.org/10.1557/adv.2019.298.

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ABSTRACTHybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2/ZnO interface. Treated ZnO films yield electron mobilities close to 10-2 cm2/Vs and on/off current ratios of 104 while non-treated films have mobilities on the order of 10-5 cm2/Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors.

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Thuau, Damien. "(Invited) Organic Thin Films Transistors: From Mechanical to Biochemical Sensors". ECS Meeting Abstracts MA2022-02, nr 35 (9.10.2022): 1287. http://dx.doi.org/10.1149/ma2022-02351287mtgabs.

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Interest in organic electronic materials, and in particular their potential for low-cost fabrication over large areas, led to the development of organic field-effect transistors (OFETs). The potential of OFETs has been demonstrated in a variety of applications, including pixel drivers for displays, bionic skin, wearable electronics and sensitive chemical sensors that can operate in aqueous environments. OFETs use conjugated, semiconducting small molecules and polymers and offer an alternative to inorganic devices for applications in which facile processing on different substrates and tunable electronic properties are required. The flexibility requirement implies either performance stability towards deformation, or conversely, detectable response to the deformation itself. The knowledge of the electromechanical response of organic semiconductors to external stresses is therefore not only interesting from a fundamental point of view, but also necessary for the development of real world applications. To this end, this presentation highlights the importance of the choice of functional materials (organic semiconductors and dielectrics) as well as the relationship structure/properties in transistors based sensors. Organic semiconductors (OSCs) are promising transducer materials when applied in OFETs taking advantage of their electrical properties that highly depend on the morphology of the semiconducting film. The effects of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT) thickness on its piezoresistive sensitivity are presented. A critical thickness corresponding to the appearance of charge carriers percolation paths in the material can tune the gauge factors (GFs) by a factor 10. In addition, single crystal OSC are regarded as promising electroactive materials for strain sensing application. Herein this talk, we will present how strain induces simultaneous mobility changes along all three axes, and that in some cases the response is higher along directions orthogonal to the mechanical deformation. These variations cannot be explained by the modulation of intermolecular distances, but only by a more complex molecular reorganisation, which is particularly enhanced, in terms of response, by p-stacking and herringbone stacking. This microscopic knowledge of the relation between structural and mobility variations is essential for the interpretation of electromechanical measurements for crystalline organic semiconductors, and for the rational design of electronic devices. Alternatively, this talk will highlight how the use of an active gate dielectric layer such as poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) piezoelectric polymer can lead to highly efficient electro-mechanical sensitivity. In such case, the sensing mechanism of the electro-mechanical transducer originates from the piezoelectric material itself, which affects the electrical behavior of the transistor as signature of a mechanical event. The second part of this talk will focus on another kind of TFT based sensor, namely the organic electrochemical transistors (OECTs) which have found recently applications in chemical and biological sensing and interfacing and neuromorphic computing. OECT rely on ions that are injected from the electrolyte into polymer-based mixed conductors, thereby changing its doping state and hence its conductivity. While great progress has been achieved, organic mixed conductors frequently experience significant volumetric changes during ion uptake/rejection, i.e., during doping/ de-doping and charging/discharging. Although ion dynamics may be enhanced in expanded networks, these volumetric changes can have undesirable consequences, e.g., negatively affecting hole/electron conduction and severely shortening device lifetime. New materials able to transport ions and electrons/holes and that exhibits low swelling will be presented, expanding the materials-design toolbox for the creation of low-swelling soft mixed conductors with tailored properties and applications in bioelectronics and beyond.

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4

Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, Kengo Terai, Shuhei Sugii, Hironobu Hayashi, Naoki Aratani, Mitsuharu Suzuki i Hiroko Yamada. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach". Materials 13, nr 10 (18.05.2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established toward obtaining desirable thin-film morphology via this unconventional method. Herein, we evaluate a new windmill-shaped molecule with anthryl blades, 1,3,5-tris(5-(anthracen-2-yl)thiophen-2-yl)benzene, which is designed to deposit via the photoprecursor approach for use as the p-sublayer in p–i–n-type organic photovoltaic devices (OPVs). The new compound is superior to the corresponding precedent p-sublayer materials in terms of forming smooth and homogeneous films, thereby leading to improved performance of p–i–n OPVs. Overall, this work demonstrates the effectiveness of the windmill-type architecture in preparing high-quality semiconducting thin films through the photoprecursor approach.

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Gazioglu, Dilek Taskin, Fatih Dumludag, Mustafa Coskun i Savas Berber. "Fabrication and characterization of P3HT --- based OFETs with TPU --- polymeric gate dielectric prepared by electrospinning method with different thicknesses". Физика и техника полупроводников 56, nr 7 (2022): 719. http://dx.doi.org/10.21883/ftp.2022.07.52767.9808a.

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Current work reports the manufacturing and electrical characteristics of organic field-effect transistors in the top-contact bottom-gate configurations utilizing solution - processed poly (3-hexylthiophene) films as an active semiconducting layer and thermoplastic polyurethane as gate insulator. A spin coating chemical polymerization technology and an electrospinning tool for polymeric mats production were used to prepare uniform organic thin films with controlled thickness from their solutions. Commercially available flat glass slides were used as the starting substrate. To form the gate electrode a thin layer of metal such as gold (Au) or silver (Ag) was deposited on the glass surface substrates by thermal evaporation through a shadow mask. Thermoplastic polyurethane insulating films with different thicknesses were electrospun from precursor solution on the substrates with Au or Ag electrodes. Patterned Au and/or Ag drain and source electrodes were deposited directly on the surface of as - fabricated poly(3-hexylthiophene) organic semiconductor layer. We used two kinds of metals that have different work functions and their combinations to investigate the influence of the source, drain and gate electrode materials on the output characteristics of fabricated organic thin film transistors. All fabricated of organic field-effect transistor devices showed typical p-type channel characteristics. Additionally, the effects of thermoplastic polyurethane gate dielectric thickness as well as the influence of processing parameters on electrical performances of organic field-effect transistors fabricated were also investigated. Results show that all developed transistors exhibit good and stable performance up to a relatively high drain voltage of ~50 V and the drain-source current up to ~0.5 μA. Keywords: organic field-effect transistors, P3HT organic semiconductor, TPU gate dielectric, electrical characteristics.

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6

Lkhamsuren, Enkhtur, i Galbadrakh Ragchaa. "Carrier mobility in field effect transistors based on copper-phthalocyanine thin films with different phase structure". Физик сэтгүүл 15, nr 309 (15.03.2022): 17–22. http://dx.doi.org/10.22353/physics.v15i309.254.

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Using annealing procedure at different temperatures after deposition at room temperature we obtained copper- phthalocyanine (CuPc) thin films with a — and p —phase structure. A phase structure of thin films was controlled by X-ray diffraction method, morphology was controlled by SEM. The field effect transistors was fabricated by high vacuum deposition of CuPc thin film (thickhess of 100 nm) on Si02 substrate which acting as gate contact. Gold drain and source contacts deposited on the top of active layer of FET. From measured current voltage measurements calculated mobility and concentration of charge carriers in FET. These parameters depend on phase structure of CuPc thin film, and characteristics of our FET are comparable with values of other authors. CuPc is commercially available macro cyclic metal complex that can be easily obtained in large quantity and high purity. Together with other phthalocyanine derivatives, the chemically and thermally stable CuPc has wide applications in dye processing, spectral sensitization, chemical sensors, and optical data storage [3-4]. The semiconducting behavior of metal phthalocyanines was first observed in 1948 and they have since attracted great interest in advancement of protptype organic semiconductors. Among the metal substituted phthalocyanines CuPc has been found superior properties [5-7], such as phenomena of field dependent and wavelength-dependent efficiency in an organic static induction transistors, and stabilizing role of CuPc layer on a highly stable organic electroluminescent device based on thin film Alq, and indicated a very weak interaction between CuPc and Au at the interface. In general, phthalocyanine materials can exist in several crystalline polymorphs, including a-, p -, x-and y - structure, and the most well known are the thermally metastable a- and p - [8-10], Phthalocyanine films deposited at room temperature usually consist of a-phase crystallites (at sublimation pressure of less than 10 Pa). At higher deposition pressures or at substrate temperature above 210°C, the p -phase directly obtained [11], Although it is well known that a-phase crystallites undergo a phase transformation into P -phase by treatment in various organic suspension media [12,13] or during annealing at higher temperatures [14,15], only some authors describe the nature of the a—>p phase transformation of copper phthalocyanine thin films with a thickness of less than 100 nm [8,14-15].

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7

McCulloch, Iain, Clare Bailey, Kristijonas Genevicius, Martin Heeney, Maxim Shkunov, David Sparrowe, Steven Tierney i in. "Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 364, nr 1847 (22.08.2006): 2779–87. http://dx.doi.org/10.1098/rsta.2006.1854.

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Organic electronics technology, in which at least the semiconducting component of the integrated circuit is an organic material, offers the potential for fabrication of electronic products by low-cost printing technologies, such as ink jet, gravure offset lithography and flexography. The products will typically be of lower performance than those using the present state of the art single crystal or polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. The organization and alignment of the mesogens, both before and after crosslinking, were probed by grazing incidence wide-angle X-ray scattering of thin films. Both time-of-flight and field effect transistor devices were prepared and their electrical characterization reported.

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8

Jones, Leighton, Xujun Luo, Algy Kazlauciunas i Long Lin. "A bifunctional smart material: the synthesis of a metal-free black pigment for optoelectronic applications from an organic semiconducting molecular rod". Pigment & Resin Technology 47, nr 1 (2.01.2018): 14–28. http://dx.doi.org/10.1108/prt-02-2017-0014.

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Purpose This paper aims to synthesise and evaluate the properties of a novel smart material consisting of a metal-free organic black pigment with a unique chromophore for bifunctional applications in optoelectronics. Design/methodology/approach A robust and highly efficient organic reaction, namely, a double [2 + 2] cycloaddition, was deployed to transform a rod-like structure for charge-transfer applications to a strongly conjugated light-absorbing molecule for both optical and electronic applications. Findings The synthesis and characterisation of an air-stable metal-free black pigment is reported, which contains an unconventional donor–acceptor panchromatic chromophore with an absorption window spanning 600 nm; the compound was synthetically converted from an organic semiconducting molecular rod and retains strong charge-transfer properties. The chromophore comprises tetracyanoquinodimethane adduct on either side of a dithienothiophenyl core, capped with hexyl thiophenes that ensure solubility in common organic solvents. Its propensity to form excellent thin films on different substrates such as glass and paper, with a total opacity in organic solvent, gives it the potential for wide-ranging applications in organic optoelectronics. Research limitations/implications The synthetic chemistry and fundamental properties are investigated in the present study, with more detailed treatments and analysis to be soon developed. One leading smart material is presented, with further derivatives under investigation. Practical implications The work presented shows the possibility of converting structures from one application to another with relative ease, but how they retain properties for both, using well-known and facile conditions. Originality/value The structures are novel and an enhanced air-stable organic panchromatic chromophore is reported for processing in common organic solvents.

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Mirka, Brendan, Nicole Rice, Phillip Williams, Mathieu Tousignant, Nicholas Boileau, William Bodnaryk, Darryl Fong, Alex Adronov i Benoit Lessard. "Influence of Excess Conjugated Wrapping Polymer in Semiconducting Single-Walled Carbon Nanotube Dispersions". ECS Meeting Abstracts MA2023-01, nr 10 (28.08.2023): 1214. http://dx.doi.org/10.1149/ma2023-01101214mtgabs.

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Single-walled carbon nanotubes (SWNTs) are promising nanomaterials for incorporation into organic electronic devices (OEDs), with the potential to fabricate flexible devices while exploiting inexpensive solution-processing techniques. As-synthesized SWNTs are insoluble and comprised of a mixture of metallic and semiconducting SWNTs (sc-SWNTs), necessitating dispersal and purification before integration into OEDs. Refinement of conjugated polymer extraction techniques has allowed for the isolation of sc-SWNTs from metallic in a reproducible and scalable manner. The availability of highly-pure sc-SWNT materials has facilitated the production of thin-film transistors (TFTs) with very high charge carrier mobilities, outperforming organic small molecule and polymer semiconductors. However, the realization of commercial OED applications of polymer-sorted sc-SWNTs have not yet been achieved, partially due to the prohibitive time and materials costs associated with purifying sc-SWNTs. Current protocols for dispersing sc-SWNTs with conjugated polymers involve three broad steps: (1) dispersion of bulk SWNT material, (2) removal of non-dispersed carbonaceous materials, and (3) removal of excess polymer through filtration or centrifugation. The final step of removal of excess polymer is time-consuming and wasteful, but viewed as necessary for preparing high-performing TFTs, as the conjugated polymer has much lower performance compared to SWNTs. In this study we performed the first systematic investigation of the effect of excess polymer on SWNT TFT performance. Three SWNT concentrations were investigated, with varying ratios of excess polymer added to each. TFT device performance was monitored using several metrics, including: mobility, threshold voltage, on/off ratios and hysteresis. Characterization of large numbers of replicate TFT devices determined that below a threshold amount of excess polymer the presence of excess polymer did not have a negative impact on device performance. Detailed analysis of the sc-SWNT films through Raman spectroscopy and atomic force microscopy (AFM) confirmed that a simple rinsing step was sufficient to remove all the unbound conjugated polymer from the substrate surface without affecting the sc-SWNT network. The volume of solvent required for the rinsing step was substantially lower than that required for filtration or centrifugation steps. Furthermore, at higher SWNT concentrations the excess polymer prevented nanotube bundling, resulting in moderate improvements in both mobility and on/off ratios. Our results were reproducible for two different conjugated polymer sc-SWNT systems, demonstrating the versatility of this procedure.

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Iwamoto, Mitsumasa. "Nanometric electrostatic interfacial phenomena in organic semiconducting thin films". Journal of Materials Chemistry 10, nr 1 (2000): 99–106. http://dx.doi.org/10.1039/a903004b.

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Song, Xiaoyu, Xinyue Wang, Yusen Li, Chengzhi Zheng, Bowen Zhang, Chong‐an Di, Feng Li i in. "2D Semiconducting Metal–Organic Framework Thin Films for Organic Spin Valves". Angewandte Chemie International Edition 59, nr 3 (29.11.2019): 1118–23. http://dx.doi.org/10.1002/anie.201911543.

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Song, Xiaoyu, Xinyue Wang, Yusen Li, Chengzhi Zheng, Bowen Zhang, Chong‐an Di, Feng Li i in. "2D Semiconducting Metal–Organic Framework Thin Films for Organic Spin Valves". Angewandte Chemie 132, nr 3 (29.11.2019): 1134–39. http://dx.doi.org/10.1002/ange.201911543.

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Feldblyum, Jeremy I., Clara H. McCreery, Sean C. Andrews, Tadanori Kurosawa, Elton J. G. Santos, Vincent Duong, Lei Fang, Alexander L. Ayzner i Zhenan Bao. "Few-layer, large-area, 2D covalent organic framework semiconductor thin films". Chemical Communications 51, nr 73 (2015): 13894–97. http://dx.doi.org/10.1039/c5cc04679c.

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A method to form thin films of a semiconducting covalent organic framework is disclosed. Thin film formation allows facile transfer to device-relevant substrates, enabling the first demonstration of a COF-based field-effect transistor.

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14

Diego Fernandes, José, Mateus D. Maximino, Maria Luisa Braunger, Matheus S. Pereira, Clarissa de Almeida Olivati, Carlos J. L. Constantino i Priscila Alessio. "Supramolecular architecture and electrical conductivity in organic semiconducting thin films". Physical Chemistry Chemical Physics 22, nr 24 (2020): 13554–62. http://dx.doi.org/10.1039/d0cp01293a.

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Szczęsny, Robert, Edward Szłyk, Marek A. Wiśniewski, Tuan K. A. Hoang i Duncan H. Gregory. "Facile preparation of copper nitride powders and nanostructured films". J. Mater. Chem. C 4, nr 22 (2016): 5031–37. http://dx.doi.org/10.1039/c6tc00493h.

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Powders and thin films of copper nitride, Cu₃N, can be synthesised simply from copper(ii) trifluoroacetate, the latter by facile solution processing, resulting in stoichiometric nanostructured semiconducting materials with a band gap of 1.48 eV.

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Misra, A., i T. E. Mitchell. "Defect Structures in Semiconducting Resi2−x Epitaxial Thin Films". Microscopy and Microanalysis 5, S2 (sierpień 1999): 726–27. http://dx.doi.org/10.1017/s1431927600016950.

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Narrow band gap semiconductors such as ReSi2-x (Eg ∽0.12 eV) are potential materials for infrared detectors [1]. Further, ReSi2-x is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi2-x /Si heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi2-x film and (001)Si substrate was observed by ion channeling [1]. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi2-x epitaxial films on (001) Si. Comparisons are made to our previous microscopy study [2] on the defect structures in bulk single crystals of ReSi2-x.ReSi2-x films were prepared by reactive deposition epitaxy (RDE) technique by evaporating Re onto (001) Si wafer at 650 °C. A cap layer of Cr was evaporated at room temperature. A bright field (BF) TEM image of the interface in cross-section is shown in Fig. 1 with the corresponding selected area diffraction pattern (SADP) shown in Fig. 2.

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Wenisch, Christoph, Sebastian Engel, Stephan Gräf i Frank A. Müller. "Dual Laser Beam Processing of Semiconducting Thin Films by Excited State Absorption". Materials 14, nr 5 (6.03.2021): 1256. http://dx.doi.org/10.3390/ma14051256.

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We present a unique dual laser beam processing approach based on excited state absorption by structuring 200 nm thin zinc oxide films sputtered on fused silica substrates. The combination of two pulsed nanosecond-laser beams with different photon energies—one below and one above the zinc oxide band gap energy—allows for a precise, efficient, and homogeneous ablation of the films without substrate damage. Based on structuring experiments in dependence on laser wavelength, pulse fluence, and pulse delay of both laser beams, a detailed concept of energy transfer and excitation processes during irradiation was developed. It provides a comprehensive understanding of the thermal and electronic processes during ablation. To quantify the efficiency improvements of the dual-beam process compared to single-beam ablation, a simple efficiency model was developed.

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Batista, Carlos, Ricardo M. Ribeiro i Vasco Teixeira. "Vanadium Oxide Thin Films Synthesized by Reactive Ion Beam Sputter Deposition: Influence of Processing Parameters". Materials Science Forum 730-732 (listopad 2012): 251–56. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.251.

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Vanadium oxide thin films were deposited by reactive ion beam sputtering deposition onto glass substrates. The films were prepared by sputtering from a metallic vanadium target with an argon+oxygen ion beam in vacuum. Different processing conditions were evaluated with focus in obtaining monoclinic VO2(M) phase, which is known to exhibit a semiconducting-metal phase transition near room temperature. X-ray diffractometry (XRD) analyses revealed amorphous films for temperatures below 500°C. In crystalline films, the co-existence of VO2(M) with other phases was suppressed by pre-depositing a very thin metallic vanadium seeding layer which showed to promote the formation of single phase VO2(M) films. The VO2(M) films showed clearly the distinctive optical modulation behavior at the near-infrared range when going through the phase transition. The temperature dependence of sheet resistance supports the optical analyses revealing an evident semiconducting-metal behavior change up to over 2 orders of magnitude.

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Kim, Seong Won, Sangsik Park, Siyoung Lee, Daegun Kim, Giwon Lee, Jonghyun Son i Kilwon Cho. "Stretchable Mesh‐Patterned Organic Semiconducting Thin Films on Creased Elastomeric Substrates". Advanced Functional Materials 31, nr 25 (16.04.2021): 2010870. http://dx.doi.org/10.1002/adfm.202010870.

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Saleh, A. M., S. M. Hraibat, R. M.-L. Kitaneh, M. M. Abu-Samreh i S. M. Musameh. "Dielectric response and electric properties of organic semiconducting phthalocyanine thin films". Journal of Semiconductors 33, nr 8 (sierpień 2012): 082002. http://dx.doi.org/10.1088/1674-4926/33/8/082002.

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Cornil, J., J. P. Calbert, D. Beljonne, R. Silbey i J. L. Brédas. "Charge Transport versus Optical Properties in Semiconducting Crystalline Organic Thin Films". Advanced Materials 12, nr 13 (czerwiec 2000): 978–83. http://dx.doi.org/10.1002/1521-4095(200006)12:13<978::aid-adma978>3.0.co;2-s.

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Quinton, Cassandre, Mitsuharu Suzuki, Yoshitaka Kaneshige, Yuki Tatenaka, Chiho Katagiri, Yuji Yamaguchi, Daiki Kuzuhara, Naoki Aratani, Ken-ichi Nakayama i Hiroko Yamada. "Evaluation of semiconducting molecular thin films solution-processed via the photoprecursor approach: the case of hexyl-substituted thienoanthracenes". Journal of Materials Chemistry C 3, nr 23 (2015): 5995–6005. http://dx.doi.org/10.1039/c5tc00794a.

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Zhang, Xinan, Binghao Wang, Lizhen Huang, Wei Huang, Zhi Wang, Weigang Zhu, Yao Chen, YanLi Mao, Antonio Facchetti i Tobin J. Marks. "Breath figure–derived porous semiconducting films for organic electronics". Science Advances 6, nr 13 (marzec 2020): eaaz1042. http://dx.doi.org/10.1126/sciadv.aaz1042.

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Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).

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Cho, Chan-Youn, Hong-Goo Jeon, Jin-Sung Choi, Yun-Ki Kim, Jong-Sun Lim, J. Jung, Song-Yun Cho, Chang-Jin Lee i Byoung-Choo Park. "Organic Semiconducting Thin Films Fabricated by Using a Pre-metered Coating Method for Organic Thin Film Transistors". Journal of the Korean Institute of Electrical and Electronic Material Engineers 25, nr 7 (1.07.2012): 531–36. http://dx.doi.org/10.4313/jkem.2012.25.7.531.

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Kotadiya, Naresh B., Anirban Mondal, Paul W. M. Blom, Denis Andrienko i Gert-Jan A. H. Wetzelaer. "A window to trap-free charge transport in organic semiconducting thin films". Nature Materials 18, nr 11 (23.09.2019): 1182–86. http://dx.doi.org/10.1038/s41563-019-0473-6.

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Speakman, Stuart P., Gregor G. Rozenberg, Kim J. Clay, William I. Milne, Adelina Ille, Ian A. Gardner, Eric Bresler i Joachim H. G. Steinke. "High performance organic semiconducting thin films: Ink jet printed polythiophene [rr-P3HT]". Organic Electronics 2, nr 2 (wrzesień 2001): 65–73. http://dx.doi.org/10.1016/s1566-1199(01)00011-8.

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Segal, M., i M. A. Baldo. "Reverse bias measurements of the photoluminescent efficiency of semiconducting organic thin films". Organic Electronics 4, nr 2-3 (wrzesień 2003): 191–97. http://dx.doi.org/10.1016/j.orgel.2003.08.010.

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Böhm, W., T. Fritz i K. Leo. "Charge Transport in Thin Organic Semiconducting Films: Seebeck and Field Effect Studies". physica status solidi (a) 160, nr 1 (marzec 1997): 81–87. http://dx.doi.org/10.1002/1521-396x(199703)160:1<81::aid-pssa81>3.0.co;2-s.

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Mandal, Saumen, Gangadhar Purohit i Monica Katiyar. "Inkjet Printed Organic Thin Film Transistors: Achievements and Challenges". Materials Science Forum 736 (grudzień 2012): 250–74. http://dx.doi.org/10.4028/www.scientific.net/msf.736.250.

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Inkjet printing of organic thin film transistors is an enabling technology for many applications requiring low cost electronics such as RFID tags, sensors, e-paper, and displays. This review summarizes the achievements and remaining challendges in the field. An all inkjet printed organic thin film transistor is feasible, but manufacturability needs to be improved. Often, a hybrid process in which only some layers are inkjet printed is used. Development of devices requires optimization of (1) ink chemistry, (2) inkjet process, (3) substrate ink interaction, and (4) new device structures. Several conducting, dielectric and semiconducting materials have been used to formulate ink. It appears that metal nanoparticle based conducting ink and PEDOT:PSS are widely used materials to fabricate source, drain and gate electrodes. PVPh is the most popular dielectric material for inkjet printing. To print semiconducting layer, both polymers and oligomers/small molecules are used. Many high performance organic semiconductors are p-type, but few n-type organic semiconductors show excellent performance. In addition to improved materials, challenges inherent in the inkjet process also need solutions. These are registration, alignment of the source,and drain with gate, resolution, reducing off-state current, and roll-to-roll processing.

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Ourmazd, A., M. Scheffler, M. Heinemann i J.-L. Rouviere. "Microscopic Properties of Thin Films: Learning About Point Defects". MRS Bulletin 17, nr 12 (grudzień 1992): 24–32. http://dx.doi.org/10.1557/s0883769400046923.

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Microscopic properties of thin films are often strongly influenced by departures from “perfection.” These can take the form of extended defects such as dislocations, interfacial roughness, or point defects. Direct imaging of extended defects was one of the early contributions of electron microscopy to solid-state science. Since then, the role of extended defects in controlling the fabrication and properties of thin films has been extensively studied and reviewed. Recently, in-situ observation of strain relaxation in thin-film structures has increased our understanding of dislocation kinetics and its effect on properties of thin films.In this article, we focus on electron microscopic studies of interfacial roughness, the effect of processing on thin films, and the role and properties of intrinsic point defects in solids. Concurrent development of sophisticated theoretical and experimental approaches has substantially facilitated the investigation of point-defect properties. Here, we illustrate how results from theory and experiment can be combined to form a detailed picture of point-defect diffusion in solids, and highlight areas needing increased attention. Microscopic properties of thin films cannot be covered in a single review. For this reason, and because fabrication of semiconducting thin films has reached unprecedented levels of sophistication, we illustrate this article with references to semiconducting materials.Our main conclusions can be summarized as follows, (a) Thin films of the highest quality are bounded by interfaces that are microscopically rough. Moreover, thin-film interfaces contain roughness on many length scales, each affecting a subset of the physical properties of interest.

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Kitaneh, Rushdi, Abdelkarim Saleh i Robert Gould. "Ac electrical parameters of Al-ZnPc-Al organic semiconducting films". Open Physics 4, nr 1 (1.03.2006): 87–104. http://dx.doi.org/10.1007/s11534-005-0008-4.

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AbstractThe ac electrical parameters of thermally evaporated zinc phthalocyanine, ZnPc, semiconducting thin films was measured in the temperature range of 180–390 K and frequency between 0.1 and 20 kHz. Aluminum electrode contacts were utilized to sandwich the organic ZnPc semiconducting films. Capacitance and loss tangent decreased rapidly with frequency at high temperatures, but at lower temperatures a weak variation is observed. An equivalent circuit model assuming ohmic contacts could qualitatively and successfully explains capacitance and loss tangent behavior.The ac conductivity showed strong dependence on both temperature and frequency depending on the relevant temperature and frequency range under consideration. Ac conductivity σ (ω) is found to vary with ω, as ω s with the index s ≤ 1.35 suggesting a dominant hopping conduction process at low temperatures (< 250 K) and high frequency. The conductivity of some samples did not increase monotonically with temperature. This behavior was attributed to oxygen exhaustion of the sample as its temperature is increased. The ac conductivity behavior at low temperatures of ZnPc films could be described well by Elliott model assuming hopping of charge carriers between localized sites.

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Zhao, Kui, Xinhong Yu, Ruipeng Li, Aram Amassian i Yanchun Han. "Solvent-dependent self-assembly and ordering in slow-drying drop-cast conjugated polymer films". Journal of Materials Chemistry C 3, nr 38 (2015): 9842–48. http://dx.doi.org/10.1039/c5tc02415c.

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The mechanistic understanding of the intrinsic molecular self-assembly of conjugated polymers is of immense importance to control the microstructure development in organic semiconducting thin films, with a meaningful impact on charge transport and optoelectronic properties.

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de Castro, Fernando A., Frank Nüesch, Christian Walder i Roland Hany. "Challenges Found When Patterning Semiconducting Polymers with Electric Fields for Organic Solar Cell Applications". Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/478296.

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A material-independent, contactless structuring method of semiconducting organic materials for the fabrication of interface-enhanced bilayer solar cells is not available so far. Patterning of thin films using electrohydrodynamic instabilities possesses many desired characteristics and has convincingly been used as a simple method to structure and replicate patterns of nonconducting polymers on submicrometer length scales. However, the applicability of this technique to a wider range of materials has not been demonstrated yet. Here, we report attempts to structure poly(p-phenylene vinylene) in a similar way. We found that thin films of poly(2-methoxy-5-(2′-ethylhexyl-oxy)-1,4-phenylene-vinylene) (MEH-PPV) and poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene-vinylene) (MDMO-PPV) could not be destabilized at all in the limited accessible range of the experimental parameters set by the delicate chemical nature of these materials. We discuss failure origins and present possible loopholes for the patterning of semiconducting polymers using electric fields.

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Abdellah, Alaa, Bernhard Fabel, Paolo Lugli i Giuseppe Scarpa. "Spray deposition of organic semiconducting thin-films: Towards the fabrication of arbitrary shaped organic electronic devices". Organic Electronics 11, nr 6 (czerwiec 2010): 1031–38. http://dx.doi.org/10.1016/j.orgel.2010.02.018.

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Asawapirom, U., F. Bulut, T. Farrell, C. Gadermaier, S. Gamerith, R. Güntner, T. Kietzke i in. "Materials for polymer electronics applications– semiconducting polymer thin films and nanoparticles". Macromolecular Symposia 212, nr 1 (kwiecień 2004): 83–92. http://dx.doi.org/10.1002/masy.200450808.

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Zakaria, Nabila Anis, i Syed Abdul Malik. "The Influence of Spin Coating Speed on the Optical Properties of P3HT Thin Film". Journal of Physics: Conference Series 2582, nr 1 (1.09.2023): 012027. http://dx.doi.org/10.1088/1742-6596/2582/1/012027.

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Abstract Spin coating technique has been widely used in the fabrication of thin films due to its ease of use, inexpensive processing cost and providing control over the thickness of the film. Various polymers have been used in fabricating spin-coated thin film and poly(3-hexylthiophene) (P3HT) is one of the prevalent polymers utilized due to its semiconducting properties and flexibility in processing. In this study, P3HT is deposited on pre-cleaned quartz glass by the method of spin coating. The spin coating speed is varied from 500, 1000, 1500, 2000, 2500 rpm and the optical properties of the films are characterized by using a UV-Vis spectrophotometer. The UV-Vis absorption spectra of P3HT designated absorption peaks in the range of 520 nm to 550 nm. It is shown that the absorbance of P3HT is decreased with every increment of the spinning speed. Thus revealing the dependency of P3HT thin films’ optical properties on spin coating speed.

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G. S. Santos, João, Marcio A. Correa, Armando Ferreira, Bruno R. Carvalho, Rodolfo B. da Silva, Felipe Bohn, Senendxu Lanceiros-Méndez i Filipe Vaz. "Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture". Materials 13, nr 13 (29.06.2020): 2907. http://dx.doi.org/10.3390/ma13132907.

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Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.

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Murphy, Craig E., Li Yang, Santanu Ray, Liyang Yu, Steven Knox i Natalie Stingelin. "Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors". Journal of Applied Physics 110, nr 9 (listopad 2011): 093523. http://dx.doi.org/10.1063/1.3660779.

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Kalia, Sameer, Aman Mahajan, C. G. Ghansyam i R. K. Bedi. "Mobility modulation in low carrier concentration organic semiconducting thin films by varying disorder parameters". Journal of Applied Physics 121, nr 22 (14.06.2017): 225501. http://dx.doi.org/10.1063/1.4985181.

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Kapetanakis, Eleftherios, Charalampos Katsogridakis, Dimitra Dimotikali, Panagiotis Argitis i Pascal Normand. "Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices". Advanced Electronic Materials 6, nr 7 (11.06.2020): 2000238. http://dx.doi.org/10.1002/aelm.202000238.

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Novikov, Artyom V., Lidiya I. Kuznetsova, Nadezhda N. Dremova, Aleksei A. Parfenov i Pavel A. Troshin. "Environment-friendly aqueous processing of [60]fullerene semiconducting films for truly green organic electronics". Journal of Materials Chemistry C 8, nr 2 (2020): 495–99. http://dx.doi.org/10.1039/c9tc05007h.

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Here we report an environmentally friendly and easy to use technique for fabrication of C₆₀ semiconductor films suitable for different applications such as design of flexible electronic circuits or gas sensors.

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42

Castro, Fernando A., Carlos F. O. Graeff, Jakob Heier i Roland Hany. "Interface morphology snapshots of vertically segregated thin films of semiconducting polymer/polystyrene blends". Polymer 48, nr 8 (kwiecień 2007): 2380–86. http://dx.doi.org/10.1016/j.polymer.2007.02.059.

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Baskaran, Suresh, Lin Song, Jun Liu, Yuan L. Chen i Gordon L. Graff. "Titanium Oxide Thin Films on Organic Interfaces through Biomimetic Processing". Journal of the American Ceramic Society 81, nr 2 (20.01.2005): 401–8. http://dx.doi.org/10.1111/j.1151-2916.1998.tb02347.x.

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Carswell, William E., Maria Ittu Zugrav, Francis C. Wessling i Glen Haulenbeek. "Ground and space processing of single-crystalline organic thin films". Journal of Crystal Growth 211, nr 1-4 (kwiecień 2000): 428–33. http://dx.doi.org/10.1016/s0022-0248(99)00821-0.

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Wahab, Nur Zuraihan Abd, Abdullah Abdulhameed, Ahmad Ghadafi Ismail, Muhammad Mahyiddin Ramli, Roslina Mohd Sidek, Suhaidi Shafie i Mohd Nazim Mohtar. "Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials". ECS Journal of Solid State Science and Technology 12, nr 4 (1.04.2023): 044002. http://dx.doi.org/10.1149/2162-8777/acc75c.

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The use of organic thin film transistors (OTFTs) is growing rapidly as an alternative to their inorganic counterparts due to their advantageous properties, such as easy processing and flexibility. The performance of OTFTs is still undergoing improvement and taking this as a recognition, this paper reviews various factors that influence the performance of the OTFTs, primarily in terms of field-effect mobility. The influencing factors reviewed in this article are divided into intrinsic and extrinsic factors for different organic semiconducting materials (OSMs). The intrinsic factors include the OSMs’ molecular orientation, OSM/dielectric interaction, and OSM/electrode interaction. The extrinsic factors are basically related to the OSM processing and OTFTs fabrication. For example, the article discusses how mixing, blending, and annealing affect the properties of the OSMs. The effect of the ambient atmosphere on OTFTs’ performance is also discussed. The aim of this article is to discuss the current trends related to one of the critical figures of merit of OTFTs, which is the mobility of charge carriers.

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Cimrová, Věra, Veronika Pokorná, Vagif Dzhabarov i Drahomír Výprachtický. "Semiconducting Conjugated Copolymer Series for Organic Photonics and Electronics". Materials Science Forum 851 (kwiecień 2016): 173–78. http://dx.doi.org/10.4028/www.scientific.net/msf.851.173.

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Donor–acceptor copolymer series containing 4,6-di (thien-2′-yl) thieno [3,4-c][1,2,5] thiadiazole or its derivatives serving as electron-acceptor units and various electron-donor units such as 9,9-bis (alkyl) fluorene, benzene, bithiophene or carbazole derivatives is reported. These copolymers possess narrow optical band gap in the range of 1.0 - 1.5 eV depending on the character of the donor units. They exhibit relatively high electron affinity. Absorption of copolymer thin films covers the whole visible spectral region extended up to NIR for some copolymers. The influence of side chain nature and molecular weight on their photophysical properties is shown. Selected copolymers are used in the blends with fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester ([60]PCBM) as active layers in bulk heterojunction photovoltaic devices. The results are discussed in relation to the copolymer structure, side chain nature and molecular weight.

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Shao, Bingyao, Yiming Liu, Xinming Zhuang, Sihui Hou, Shijiao Han, Xinge Yu i Junsheng Yu. "Crystallinity and grain boundary control of TIPS-pentacene in organic thin-film transistors for the ultra-high sensitive detection of NO2". Journal of Materials Chemistry C 7, nr 33 (2019): 10196–202. http://dx.doi.org/10.1039/c9tc01219b.

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Ultra-sensitive OTFT based NO₂ sensors with a limit of detection of 1.93 ppb were realized by controlling and regulating the microstructures of TIPS-pentacene semiconducting films via solvent engineering.

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Shukla, Vivek Kumar, i Jaya Maitra. "Investigations of Different Phases Responsible for Changes in Optical Properties of Organic Semiconducting Device Material Thin Films". Journal of Materials 2013 (7.03.2013): 1–5. http://dx.doi.org/10.1155/2013/690237.

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The environment sensitivity of organic semiconductors may change their molecular structure and hence optical properties. Exploiting this concept, experiments were performed on a green light emitting material bis(8-hydroxy quinoline)Zinc, (Znq2) used in organic light emitting diodes (OLEDs). Thin films were deposited at varying deposition parameters, and their properties were compared. We investigated that as deposited films have a significant component of Znq2 tetramer out of two known forms, that is, dihydrate and anhydrous tetramer (Znq2)4, the films deposited at lower deposition rates have higher anhydrous content. The degradation of thin film is shown, that changes the optical properties of film from green emission to blue which may be due to water adsorption and crystallization.

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Rogowski, Rafal Z., Andrzej Dzwilewski, Martijn Kemerink i Anton A. Darhuber. "Solution Processing of Semiconducting Organic Molecules for Tailored Charge Transport Properties". Journal of Physical Chemistry C 115, nr 23 (25.05.2011): 11758–62. http://dx.doi.org/10.1021/jp201219h.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV i REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES". International Journal of High Speed Electronics and Systems 12, nr 02 (czerwiec 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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