Artykuły w czasopismach na temat „Pre amorphization”
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Wen, D. S., J. Liu, C. M. Osburn i J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization". Journal of The Electrochemical Society 132, nr 10 (1.10.1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.
Pełny tekst źródłaSchreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu i F. W. Saris. "Pre-amorphization damage in ion-implanted silicon". Materials Science Reports 6, nr 7-8 (sierpień 1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.
Pełny tekst źródłaAndrzejewski, M., N. Casati i A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework". Dalton Transactions 46, nr 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.
Pełny tekst źródłaCellini, C., A. Carnera, M. Berti, A. Gasparotto, D. Steer, M. Servidori i S. Milita. "Pre-amorphization damage study in as-implanted silicon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, nr 1-2 (marzec 1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.
Pełny tekst źródłaHempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen i Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization". Molecules 25, nr 5 (27.02.2020): 1068. http://dx.doi.org/10.3390/molecules25051068.
Pełny tekst źródłaMurakami, Y., I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao i T. Yoshitake. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (maj 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.
Pełny tekst źródłaAzarov, A. Yu, A. I. Titov i S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN". Journal of Applied Physics 108, nr 3 (sierpień 2010): 033505. http://dx.doi.org/10.1063/1.3462380.
Pełny tekst źródłaLi, Hong-Jyh, Peter Zeitzoff, Larry Larson i Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, nr 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.
Pełny tekst źródłaDelwail, C., S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio i in. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide". Microelectronic Engineering 254 (luty 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.
Pełny tekst źródłaFelch, S. B., H. Graoui, G. Tsai i A. Mayur. "Optimization of pre-amorphization and dopant implant conditions for advanced annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, nr 1-2 (sierpień 2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.
Pełny tekst źródłaSasaki, Y., C. G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin i in. "New method of Plasma doping with in-situ Helium pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, nr 1-2 (sierpień 2005): 41–45. http://dx.doi.org/10.1016/j.nimb.2005.04.109.
Pełny tekst źródłaPark, Soon Yeol, Kun-Sik Sung i Taeyoung Won. "Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implantation after a Pre-amorphization Process". Journal of the Korean Physical Society 58, nr 5(1) (13.05.2011): 1434–38. http://dx.doi.org/10.3938/jkps.58.1434.
Pełny tekst źródłaQuintero, A., F. Mazen, P. Gergaud, N. Bernier, J. M. Hartmann, V. Reboud, E. Cassan i Ph Rodriguez. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation". Journal of Applied Physics 129, nr 11 (21.03.2021): 115302. http://dx.doi.org/10.1063/5.0038253.
Pełny tekst źródłaSiegrist, Marco E., Michael Siegfried i Jörg F. Löffler. "High-purity amorphous Zr52.5Cu17.9Ni14.6Al10Ti5 powders via mechanical amorphization of crystalline pre-alloys". Materials Science and Engineering: A 418, nr 1-2 (luty 2006): 236–40. http://dx.doi.org/10.1016/j.msea.2005.11.024.
Pełny tekst źródłaSchreutelkamp, R. J., J. S. Custer, J. R. Liefting, F. W. Saris, W. X. Lu, B. X. Zhang i Z. L. Wang. "Pre-amorphization damage in Si(100) implanted with high mass MeV ions". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62, nr 3 (styczeń 1992): 372–76. http://dx.doi.org/10.1016/0168-583x(92)95259-t.
Pełny tekst źródłaPark, Soonyeol, Bumgoo Cho, Seungsu Yang i Taeyoung Won. "Kinetic Monte Carlo (kMC) Simulation of Carbon Co-Implant on Pre-Amorphization Process". Journal of Nanoscience and Nanotechnology 10, nr 5 (1.05.2010): 3600–3603. http://dx.doi.org/10.1166/jnn.2010.2263.
Pełny tekst źródłaKim, Joong-sik, i Taeyoung Won. "Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization". Microelectronic Engineering 84, nr 5-8 (maj 2007): 1556–61. http://dx.doi.org/10.1016/j.mee.2007.01.254.
Pełny tekst źródłaPark, Soon-Yeol, Young-Kyu Kim i Taeyoung Won. "Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process". Microelectronic Engineering 86, nr 3 (marzec 2009): 430–33. http://dx.doi.org/10.1016/j.mee.2008.08.010.
Pełny tekst źródłaSimoen, E., G. Brouwers, A. Satta, M. L. David, F. Pailloux, B. Parmentier, T. Clarysse, J. Goossens, W. Vandervorst i M. Meuris. "Shallow boron implantations in Ge and the role of the pre-amorphization depth". Materials Science in Semiconductor Processing 11, nr 5-6 (październik 2008): 368–71. http://dx.doi.org/10.1016/j.mssp.2008.09.006.
Pełny tekst źródłaPark, Soon-Yeol, Young-Kyu Kim i Taeyoung Won. "Investigation of boron diffusion after pre-amorphization implant with kinetic Monte Carlo approach". Journal of Computational Electronics 7, nr 3 (21.03.2008): 419–22. http://dx.doi.org/10.1007/s10825-008-0236-0.
Pełny tekst źródłaMao, Shujuan, Guilei Wang, Jing Xu, Dan Zhang, Xue Luo, Wenwu Wang, Dapeng Chen i in. "Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies". Microelectronic Engineering 201 (grudzień 2018): 1–5. http://dx.doi.org/10.1016/j.mee.2018.09.006.
Pełny tekst źródłaPark, Soon-Yeol, i Taeyoung Won. "Impact of Carbon Co-Implant on the Pre-Amorphization Process: Kinetic Monte Carlo (KMC)". Journal of Computational and Theoretical Nanoscience 6, nr 11 (1.11.2009): 2423–26. http://dx.doi.org/10.1166/jctn.2009.1301.
Pełny tekst źródłaYu, Min, Rong Wang, Huihui Ji, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang i Hideki Oka. "Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling". Microelectronic Engineering 81, nr 1 (lipiec 2005): 162–67. http://dx.doi.org/10.1016/j.mee.2005.05.003.
Pełny tekst źródłaMurakami, H., S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi i S. Miyazaki. "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)". ECS Transactions 64, nr 6 (12.08.2014): 423–29. http://dx.doi.org/10.1149/06406.0423ecst.
Pełny tekst źródłaTan, E. J., K. L. Pey, D. Z. Chi, P. S. Lee i L. J. Tang. "Improved electrical performance of erbium silicide Schottky diodes formed by Pre-RTA amorphization of Si". IEEE Electron Device Letters 27, nr 2 (luty 2006): 93–95. http://dx.doi.org/10.1109/led.2005.863142.
Pełny tekst źródłaCheng, Jung-Chien, Jia-En Lee i Bing-Yue Tsui. "Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology". Solid-State Electronics 171 (wrzesień 2020): 107834. http://dx.doi.org/10.1016/j.sse.2020.107834.
Pełny tekst źródłaLi, Zhong-Hua, Yu-Long Jiang, Run-Ling Li, Yan-Wei Zhang i Yong-Feng Cao. "Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET". IEEE Electron Device Letters 40, nr 5 (maj 2019): 777–79. http://dx.doi.org/10.1109/led.2019.2907688.
Pełny tekst źródłaRyu, Ho Jin, Yeon Soo Kim, G. L. Hofman, J. Rest, Jong Man Park i Chang Kyu Kim. "Radiation-Induced Recrystallization of U-Mo Fuel Particles and Radiation-Induced Amorphization of Interaction Products in U-Mo/Al Dispersion Fuel". Materials Science Forum 558-559 (październik 2007): 319–22. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.319.
Pełny tekst źródłaPark, Soon-Yeol, Bum-Goo Cho, Seung-Su Yang i Taeyoung Won. "Kinetic Monte Carlo (kMC) Study of the Effect of CarbonCo-implantation on the Pre-amorphization Process". Journal of the Korean Physical Society 55, nr 1 (15.07.2009): 331–35. http://dx.doi.org/10.3938/jkps.55.331.
Pełny tekst źródłaBae, Jong-Uk, Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Chang Hee Han i Jin Won Park. "Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines". Journal of Applied Physics 86, nr 9 (listopad 1999): 4943–48. http://dx.doi.org/10.1063/1.371523.
Pełny tekst źródłaKim, Seong-Dong, Cheol-Min Park i Jason C. S. Woo. "Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation". Solid-State Electronics 49, nr 1 (styczeń 2005): 131–35. http://dx.doi.org/10.1016/j.sse.2004.07.008.
Pełny tekst źródłaBIBIĆ, N., V. MILINOVIĆ, M. MILOSAVLJEVIĆ, F. SCHREMPEL, M. ŠILJEGOVIĆ i K. P. LIEB. "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers". Journal of Microscopy 232, nr 3 (grudzień 2008): 539–41. http://dx.doi.org/10.1111/j.1365-2818.2008.02143.x.
Pełny tekst źródłaXu, Genbao, W. A. Chiou, M. Meshii i P. R. Okamoto. "HREM study of amorphization of CuTi irradiated by 1 MeV electron". Proceedings, annual meeting, Electron Microscopy Society of America 48, nr 4 (sierpień 1990): 124–25. http://dx.doi.org/10.1017/s0424820100173753.
Pełny tekst źródłaPaul, Silke, i Wilfried Lerch. "Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing". Materials Science Forum 573-574 (marzec 2008): 207–28. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.207.
Pełny tekst źródłaZhang, Dan, Jing Xu, Jianfeng Gao, Anyan Du, Jing Zhang, Shujuan Mao, Yang Men i in. "Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects". Japanese Journal of Applied Physics 59, SL (21.05.2020): SLLB01. http://dx.doi.org/10.35848/1347-4065/ab922f.
Pełny tekst źródłaOzcan, Ahmet S., Donald Wall, Jean Jordan-Sweet i Christian Lavoie. "Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)". Applied Physics Letters 102, nr 17 (29.04.2013): 172107. http://dx.doi.org/10.1063/1.4801928.
Pełny tekst źródłaGhanad Tavakoli, Shahram, Sungkweon Baek i Hyunsang Hwang. "Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon". Materials Science and Engineering: B 114-115 (grudzień 2004): 376–80. http://dx.doi.org/10.1016/j.mseb.2004.07.067.
Pełny tekst źródłaSahoo, Deepak Ranjan, Izabela Szlufarska, Dane Morgan i Narasimhan Swaminathan. "Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 414 (styczeń 2018): 45–60. http://dx.doi.org/10.1016/j.nimb.2017.10.011.
Pełny tekst źródłaTitov, A. I., K. V. Karabeshkin, A. I. Struchkov, P. A. Karaseov i A. Azarov. "Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms". Journal of Physics D: Applied Physics 55, nr 17 (31.01.2022): 175103. http://dx.doi.org/10.1088/1361-6463/ac4a38.
Pełny tekst źródłaGuillemin, S., P. Gergaud, N. Bernier, L. Lachal, F. Mazen, A. Jannaud, F. Nemouchi i Ph Rodriguez. "Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms". Microelectronic Engineering 244-246 (maj 2021): 111571. http://dx.doi.org/10.1016/j.mee.2021.111571.
Pełny tekst źródłaLuo, Xue, Guilei Wang, Jing Xu, Ningyuan Duan, Shujuan Mao, Shi Liu, Junfeng Li i in. "Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate". Japanese Journal of Applied Physics 57, nr 7S2 (20.06.2018): 07MA02. http://dx.doi.org/10.7567/jjap.57.07ma02.
Pełny tekst źródłaOhuchi, Kazuya, Katsura Miyashita, Atsushi Murakoshi, Hisao Yoshimura, Kyoichi Suguro i Yoshiaki Toyoshima. "Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond". Japanese Journal of Applied Physics 38, Part 1, No. 4B (30.04.1999): 2238–42. http://dx.doi.org/10.1143/jjap.38.2238.
Pełny tekst źródłaQiuxia Xu, Xiaofong Duan, He Qian, Haihua Liu, H. Li, Zhensheng Han, Ming Liu i Wenfang Gao. "Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension". IEEE Electron Device Letters 27, nr 3 (marzec 2006): 179–81. http://dx.doi.org/10.1109/led.2006.870248.
Pełny tekst źródłaChou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Jia-Hong Huang i Yung-Hsien Wu. "Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile". IEEE Electron Device Letters 38, nr 3 (marzec 2017): 299–302. http://dx.doi.org/10.1109/led.2017.2647957.
Pełny tekst źródłaFerdov, Stanislav. "Interzeolite Transformation from FAU-to-EDI Type of Zeolite". Molecules 29, nr 8 (11.04.2024): 1744. http://dx.doi.org/10.3390/molecules29081744.
Pełny tekst źródłaChuang, Hung-Ming, Kong-Beng Thei, Sheng-Fu Tsai, Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee i Wen-Chau Liu. "Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications". Semiconductor Science and Technology 17, nr 10 (4.09.2002): 1075–80. http://dx.doi.org/10.1088/0268-1242/17/10/308.
Pełny tekst źródłaChou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng i Yung-Hsien Wu. "Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact". Microelectronic Engineering 178 (czerwiec 2017): 137–40. http://dx.doi.org/10.1016/j.mee.2017.05.031.
Pełny tekst źródłaAbd Elbary, Ahmed, Howida K. Ibrahim i Balquees S. Hazaa. "Formulation and evaluation of colon targeted tablets containing simvastatin solid dispersion". Drugs and Therapy Studies 1, nr 1 (19.12.2011): 16. http://dx.doi.org/10.4081/dts.2011.e16.
Pełny tekst źródłaObada, David O., David Dodoo-Arhin, Muhammad Dauda, Fatai O. Anafi, Abdulkarim S. Ahmed, Olusegun A. Ajayi i Ibraheem A. Samotu. "Effect of mechanical activation on mullite formation in an alumina-silica ceramics system at lower temperature". World Journal of Engineering 13, nr 4 (1.08.2016): 288–93. http://dx.doi.org/10.1108/wje-08-2016-039.
Pełny tekst źródłaBinti Aid, Siti Rahmah, Satoru Matsumoto, Toshiharu Suzuki, Gensyu Fuse i Toshihiro Nakazawa. "Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes". ECS Transactions 19, nr 1 (18.12.2019): 71–77. http://dx.doi.org/10.1149/1.3118932.
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