Gotowe bibliografie tematyczne / Pre amorphization

Gotowa bibliografia na temat „Pre amorphization”

Autor: Grafiati
Data publikacji: 25 maja 2024

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Artykuły w czasopismach na temat "Pre amorphization"

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Wen, D. S., J. Liu, C. M. Osburn i J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization". Journal of The Electrochemical Society 132, nr 10 (1.10.1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.

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Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu i F. W. Saris. "Pre-amorphization damage in ion-implanted silicon". Materials Science Reports 6, nr 7-8 (sierpień 1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.

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Andrzejewski, M., N. Casati i A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework". Dalton Transactions 46, nr 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.

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Cellini, C., A. Carnera, M. Berti, A. Gasparotto, D. Steer, M. Servidori i S. Milita. "Pre-amorphization damage study in as-implanted silicon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, nr 1-2 (marzec 1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.

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Hempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen i Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization". Molecules 25, nr 5 (27.02.2020): 1068. http://dx.doi.org/10.3390/molecules25051068.

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Streszczenie:
The aim of the study was to investigate the suitability of a convection oven to induce in situ amorphization. The study was conducted using microwave radiation-induced in situ amorphization as reference, as it has recently been shown to enable the preparation of a fully (100%) amorphous solid dispersion of celecoxib (CCX) in polyvinylpyrrolidone (PVP) after 10 min of continuous microwaving. For comparison, the experimental setup of the microwave-induced method was mimicked for the convection-induced method. Compacts containing crystalline CCX and PVP were prepared and either pre-conditioned at 75% relative humidity or kept dry to investigate the effect of sorbed water on the amorphization kinetics. Subsequently, the compacts were heated for 5, 10, 15, 20, or 30 min in the convection oven at 100 °C. The degree of amorphization of CCX in the compacts was subsequently quantified using transmission Raman spectroscopy. Using the convection oven, the maximum degree of amorphization achieved was 96.1% ± 2.1% (n = 3) for the conditioned compacts after 30 min of heating and 14.3% ± 1.4% (n = 3) for the dry compacts after 20 min of heating, respectively. Based on the results from the convection and the microwave oven, it was found that the sorbed water acts as a plasticizer in the conditioned compacts (i.e., increasing molecular mobility), which is advantageous for in situ amorphization in both methods. Since the underlying mechanism of heating between the convection oven and microwave oven differs, it was found that convection-induced in situ amorphization is inferior to microwave radiation-induced in situ amorphization in terms of amorphization kinetics with the present experimental setup.
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Murakami, Y., I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao i T. Yoshitake. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (maj 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.

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Azarov, A. Yu, A. I. Titov i S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN". Journal of Applied Physics 108, nr 3 (sierpień 2010): 033505. http://dx.doi.org/10.1063/1.3462380.

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Li, Hong-Jyh, Peter Zeitzoff, Larry Larson i Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, nr 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.

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Delwail, C., S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio i in. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide". Microelectronic Engineering 254 (luty 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.

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Felch, S. B., H. Graoui, G. Tsai i A. Mayur. "Optimization of pre-amorphization and dopant implant conditions for advanced annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, nr 1-2 (sierpień 2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.

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Rozprawy doktorskie na temat "Pre amorphization"

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Lin, Yu-Chang, i 林裕章. "Shallow Junction Doping Formation on PMOSFET by Germanium Pre-Amorphization Implantation". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/49791559263956147738.

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碩士
長庚大學
電子工程研究所
94
The main challenges for PMOSFET shallow junction formation remains the worst short channel effect (SCE) and high sheet resistance of source / drain. Ion implantation is the commonly used and best controlled technique in complementary metal-oxide-semiconductor (CMOS) technology to dope the source/drain extension (SDE) region of the device. It has been demonstrated that a method of forming low sheet resistance, shallow P+ junctions for improved PMOSFET short-channel performance on fabricated products. Shallow Si1-xGex self-aligned to the gate electrode is form by Ge pre-amorphization implantation (PAI). Afterwards, sidewall oxidation is formed and a deep BF2 implant is performed to form source/drain (S/D) region. Boron actives rapidly in the shallow Si1-xGex region to form low resistivity extensions to the channel. As compared to a conventional S/D junction process, this new process provides significantly lower S/D-extension sheet resistance and superior PMOSFET short-channel performance (threshold voltage roll-off, drain-induced barrier lowering, device off-current) which was improved by Boron suppression and higher solid solubility. The method could be used as S/D extensions for sub-100nm CMOS generations.
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Lee, Chao-Chung, i 李肇中. "Schottky Barrier Height Tuning of NiSi Using Yb Interlayer With Pre-Amorphization Implantation". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/78910484661778617482.

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Streszczenie:
碩士
國立交通大學
電子研究所
99
The metal silicide source/drain (S/D) Schottky barrier (SB) MOSFETs are considered one of the most promising candidates for sub-22nm devices because of small series resistance of S/D, easy processing, low thermal budget, and excellent short channel effect immunity. However, SB MOSFETs usually suffer from a large leakage current at the drain in the off state and poor saturation drive current due to undesired high SB height (SBH). Ni silicide is the most promising silicide material because it has greater advantages than Ti silicide and Co silicide. Owing to the Fermi level of NiSi lies close to the middle of Si bandgap, the SBH of NiSi is rather large for both electron (0.65eV) and hole (0.45eV). Several studies have addressed decreasing the SBH for electrons at the NiSi/Si interface to improve device performance by incorporating rare earth (RE) metals such as, Yb, Er, and Dy into NiSi. The results show that the RE metals segregated at the NiSi surface rather than piled up at the NiSi/Si interface after annealing, therefore little modulation of SBH was observed. In this study, tuning the SBH at the NiSi/Si interface for a Schottky barrier diode using an Yb interlayer is proposed. With the aid of pre-amorphization implantation (PAI) to silicon substrate, it was found that aggregating of Yb atoms in the surface of NiSi after silicidation is suppressed. Among the splits, the TiN/Ni(5nm)/Yb(15nm) structure deposited after the pre-amorphization of Si by N2+ ions induced the greatest change in SBH after annealing at 500℃.
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Chen, Chin Yu, i 陳慶育. "Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/92197321391993049667.

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Streszczenia konferencji na temat "Pre amorphization"

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Chen, Pin Hong, Chia Chang Hsu, Jerander Lai, Boris Liao, Chun Ling Lin, Olivia Huang, Chun Chieh Chiu, C. M. Hsu i J. Y. Wu. "Investigation pre-amorphization implantation on nickel silicide formation". W 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC). IEEE, 2014. http://dx.doi.org/10.1109/iitc.2014.6831887.

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Surdeanu, Radu, Bartek J. Pawlak, Richard Lindsay, Mark van Dal, Gerben Doornbos, Charles J. J. Dachs, Youri V. Ponomarev i in. "Pre-amorphization and co-implantation suitability for advanced PMOS devices integration". W 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.b-8-2.

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Park, Soon-Yeol, Bum-Goo Cho i Taeyoung Won. "Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique". W 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418405.

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Xu, Peng, Xiangbiao Zhou, Na Zhao, Dan Zhao i Dongping Wu. "Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing". W 2013 13th International Workshop on Junction Technology (IWJT). IEEE, 2013. http://dx.doi.org/10.1109/iwjt.2013.6644513.

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Yoshifumi Nishi, Yoshinori Tsuchiya, Atsuhiro Kinoshita, Akira Hokazono i Junji Koga. "Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique". W 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588615.

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Yu, H., M. Schaekers, A. Hikavyy, E. Rosseel, A. Peter, K. Hollar, F. A. Khaja i in. "Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation". W 2016 IEEE Symposium on VLSI Technology. IEEE, 2016. http://dx.doi.org/10.1109/vlsit.2016.7573381.

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Hsiao, T. C., P. Liu i J. C. S. Woo. "A novel salicide technology for thin film SOI MOSFETs using Ge pre-amorphization". W 1996 IEEE International SOI Conference Proceedings. IEEE, 1996. http://dx.doi.org/10.1109/soi.1996.552526.

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Lachal, Laurent, Fabrice Nemouchi, Frederic Mazen, Philippe Rodriguez, Magali Gregoire, Elodie Ghegin, Frederic Milesi i in. "Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process". W 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, 2018. http://dx.doi.org/10.1109/iit.2018.8807963.

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Tanaka, A., T. Yamaji i S. Nisikawa. "Modeling of Mechanism of Leakage in Shallow p+ /n Junction Formed by Pre-amorphization". W 1990 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1990. http://dx.doi.org/10.7567/ssdm.1990.c-10-3.

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Hsiao, Ping Liu i Woo. "An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices". W Symposium on VLSI Technology. IEEE, 1997. http://dx.doi.org/10.1109/vlsit.1997.623712.

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