Gotowa bibliografia na temat „Pré amorphisation”

In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The experimental results, supported by predictive simulations, indicate that during the ultra-fast temperature ramp-up and rump-down occurring in a millisecond Flash anneal, the basic mechanisms that control the growth and evolution of extended defects are not modified with respect to the relatively slower annealing processes, such as “soak” and “spike” Rapid Thermal Annealing. In addition, we have observed a decrease in the number of trapped interstitials in the End-Of-Range (EOR) defects when decreasing the Ge+ amorphisation energy from 30 keV down to 2 keV. This result is ascribed to two concomitant phenomena: (i) the increase of the initial number of interstitials, Ni, created by the amorphisation step, when the implant energy is decreased and (ii) the efficient interstitial annihilation at the silicon surface, whose recombination length, Lsurf, is in the nanometer range even at the very high temperatures employed in millisecond Flash anneals.

The formation of shallow junctions in germanium substrates, compatible with deep submicron CMOS processing is discussed with respect to dopant diffusion and activation and damage removal. Examples will be discussed for B and Ga and for P and As, as typical p- and n-type dopants, respectively. While 1 to 60 s Rapid Thermal Annealing at temperatures in the range 400-650oC have been utilized, in most cases, no residual extended defects have been observed by RBS and TEM. It is shown that 100% activation of B can be achieved in combination with a Ge pre-amorphisation implant. Full activation of a P-implant can also be obtained for low-dose implantations, corresponding with immobile profiles. On the other hand, for a dose above the threshold for amorphisation, a concentration-enhanced diffusion of P occurs, while a lower percentage of activation is observed. At the same time, dose loss by P out-diffusion occurs, which can be limited by employing a SiO2 cap layer.

AbstractEight perovskites of different compositions and pre-existing vacancy contents were irradiated with 1.5 MeV Kr+ ions using the HVEM-Tandem User Facility at Argonne National Laboratory. The critical dose of 1.5 MeV Kr+ ions for amorphisation (Dc) of NaNbO3, SrTiO3 and two natural perovskites varies with composition and may decrease with Na content. The D,c values of 5 members of the solid solution series from SrTiO3 to La0.67TiO3 do not exhibit a simple relationship with vacancy content: In particular, Dc(Sr0 7La0.2TiO3) is extraordinarily high (>170 × 1014 ions cm−2) compared to those of the other (Sr, La)-perovskites in the series, which have Dc values between 2.4 and 11 × 1014 ions cm−2.

AbstractEight perovskites of different compositions and pre-existing vacancy contents were irradiated with 1.5 MeV Kr+ ions using the HVEM-Tandem User Facility at Argonne National Laboratory. The critical dose of 1.5 MeV Kr+ ions for amorphisation (Dc) of NaNbO3, SrTiO3 and two natural perovskites varies with composition and may decrease with Na content. The Dc values of 5 members of the solid solution series from SrTiO3 to La0.67TiO3 do not exhibit a simple relationship with vacancy content: In particular, Dc(Sr0.7La0.2TiO3) is extraordinarily high (>170 × 1014 ions cm−2) compared to those of the other (Sr, La)-perovskites in the series, which have Dc, values between 2.4 and 11×1014 ions cm−2.

Abstract Progesterone (PRG) and testosterone (TST) were impregnated on mesoporous silica (ExP) particles via supercritical carbon dioxide (scCO2) processing at various pressures (10–18 MPa), temperatures (308.2–328.2 K), and time (30–360 min). The impact of a co-solvent on the impregnation was also studied at the best determined pressure and temperature. The properties of the drug embedded in silica particles were analysed via gas chromatography (GC), attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy, X-ray diffraction (XRD), differential scanning calorimetry (DSC), and nitrogen adsorption. An impregnation of 1 to 82 mg/g for PRG and 0.1 to 16 mg/g for TST was obtained depending on the processing parameters. There was a significant effect of pressure, time, and co-solvent on the impregnation efficiency. Generally, an increase in time and pressure plus the use of co-solvent led to an improvement in drug adsorption. Conversely, a rise in temperature resulted in lower impregnation of both TST and PRG on ExP. There was a substantial increase in the dissolution rate (> 90% drug release within the first 2 min) of both TST and PRG impregnated in silica particles when compared to the unprocessed drugs. This dissolution enhancement was attributed to the amorphisation of both drugs due to their adsorption on mesoporous silica. Graphical Abstract

AbstractFor the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

Le siliciure de Ni(10%Pt) est utilisé pour former les contacts des transistors MOS des nœuds technologiques avancés. Le siliciure de Ni(10%Pt) présente de nombreux avantages, cependant, les stabilités morphologique et thermique de la phase NiSi(Pt) posent des problèmes pour la fiabilité des composants. De plus, une diminution de la résistivité du siliciure est requise pour améliorer les performances électriques. Dans ce travail, l’influence de la PAI Ge sur la siliciuration et sur les propriétés du NiSi(Pt) est étudiée. Les conditions d’implantation ont été choisies pour faire varier la position de l’interface a-c par rapport au front de croissance du siliciure et à la concentration d’atomes de Ge implantés. La croissance du siliciure a été étudiée suivant deux approches. La première, par XRDin-situ, met en avant la séquence de phase et la cinétique de formation des phases avec une rampe de montée en température lente. La seconde, par recuit rapide (RTA) puis mesure de l’épaisseur par XRR, permet de tracer l’évolution de l’épaisseur du premier siliciure pour une rampe de montée en température rapide (procédé industriel). Les cinétiques de formation du premier siliciure sont confrontées à différents modèles de croissance. Enfin, les propriétés des siliciures ont été déterminées en fonction des conditions de PAI. Les influences du substrat en silicium amorphe sur la vitesse de formation du premier siliciure ainsi que sur la germination, la croissance des grains et la texture du NiSi sont discutées. Les résultats permettent d’identifier des conditions de PAI pour lesquelles la résistivité est minimale. Des perspectives permettant d’optimiser le procédé de PAI sont discutées
Nickel silicide alloyed with 10% of Pt is used to form the contacts of the MOS transistors for the most advanced technology nodes. Ni(10%Pt) silicide presents important advantages. However, the Ni(10%Pt) silicide still presents some drawbacks related to the morphological and thermal stability of the NiSi (Pt). Moreover, a decreased resistivity is required to improve the electrical performances. In this work the impact of the Ge PAI on the silicidation and the NiSi properties is presented. The implantation conditions have been determined to vary the relative position of the a-c interface with the silicide growth front and the Ge concentration. The silicide growth has been studied by two approaches. The first one, puts forward the silicide phase sequence and kinetics using XRD in-situ analysis which is performed at a relatively slow anneal rate. The second one, by rapid thermal anneals (RTA) and XRR measurements, allows to plot the silicide thickness evolution for a fast anneal rate which is comparable to the one used in industrial silicide process. The kinetic of growth of the first silicide, studied by RTA, are compared to several growth models. Analyses show that the first silicide is amorphous for all the samples. Finally, the silicide properties were determined as a function of the PAI conditions. Influences of the amorphous silicon substrate on the growth rate of the first silicide and the NiSi nucleation, roughness, grain growth and texture are discussed. By considering the amorphous thickness and the Ge concentration, the results show the optimal implantation conditions that allow minimizing the resistivity. Perspectives about PAI process optimization are discussed