Artykuły w czasopismach: „Power semiconductor diodes”

1

Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash i Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair". Materials Science Forum 717-720 (maj 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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Bumai, Yurii, Aleh Vaskou i Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes". Metrology and Measurement Systems 17, nr 1 (1.01.2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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Liu, Hai Rui, i Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection". Advanced Materials Research 683 (kwiecień 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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Li, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu i Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers". Advanced Materials Research 1089 (styczeń 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

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Al-Rawashdeh, Ayman Yasseen, Mikhail Pavlovich Dunayev, Khalaf Y. Alzyoud i Sarfaroz U. Dovudov. "Calculation of power losses in a frequency inverter". International Journal of Power Electronics and Drive Systems (IJPEDS) 15, nr 3 (1.09.2024): 1331. http://dx.doi.org/10.11591/ijpeds.v15.i3.pp1331-1338.

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This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.

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Shurenkov, V. V. "On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes". Advanced Materials Research 1016 (sierpień 2014): 521–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.521.

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The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

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Su, Xinran. "The Retrospect and Prospect of GaN-Based Schottky Diode". Journal of Physics: Conference Series 2381, nr 1 (1.12.2022): 012119. http://dx.doi.org/10.1088/1742-6596/2381/1/012119.

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Abstract In the 21st century, with the continuous progress of human society and the continuous upgrading of the integrated circuit industry in recent years, the rapid development of modern science and technology makes us have higher and higher requirements for semiconductor products in our life and production. Compared with the first generation and the second generation of semiconductors, the third generation of semiconductors represented by GaN relies on its high electron mobility, bandgap width, electron saturation speed, high-temperature resistance, radiation resistance, and other suitable material properties. It has more and more extensive application prospects in the research field of microwave high-power devices. Today, the introduction of semiconductors in electronics improves the energy efficiency of equipments and modules. Gallium nitride (GaN) - based schottky diodes have broad application prospects in the next generation of schottky diodes due to their excellent performance. However, because of some technical concerns, these materials have not been fully developed. This work briefly summarized some science and technology related to GaN-Based Schottky Diode. A special focus will be put on the advantages and disadvantages of GaN-Based Schottky Diode, discussing some modern improved designs. Finally, possible breakthroughs of GaN-Based Schottky Diode will be summarized.

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Zemliak, Alexander, i Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation". WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (12.07.2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

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Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.

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Ostapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov i Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures". Inventions 7, nr 4 (18.10.2022): 96. http://dx.doi.org/10.3390/inventions7040096.

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Systems with high-temperature superconductors (HTSC) impose new requirements on power conversions, since the main part of the losses in such systems is induced in the semiconductors of the converters. Within the framework of this study, the possibility of improving the static and dynamic characteristics of power semiconductor diodes using cryogenic cooling was confirmed; in some cases, a loss reduction of up to 30% was achieved.

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Kolesnikov, Maksim, M. Kharchenko, V. Dorohov i Konstantin Zolnikov. "Application of semiconductor electronics products in extreme conditions". Modeling of systems and processes 16, nr 1 (29.03.2023): 46–56. http://dx.doi.org/10.12737/2219-0767-2023-16-1-46-56.

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A study of the thermal properties of materials used in semiconductor electronics has been carried out. The dependence of the thermal resistance of GaAs diodes on the temperature increase of the product body is determined. They are determined taking into account the design solutions of the housing design of the REA, which can protect components from extreme, difficult conditions, but they increase the weight and complexity of the system. Materials such as SiC, GaAs, GaN, diamond that can withstand extreme conditions may have advantages that go far beyond their electronic characteristics. An example of the application of GaAs-based diode modules of p-i-n diodes developed by JSC "VZPP-S" is given - a three-phase bridge rectifier made according to the Larionov scheme for an electric generator with a power of up to 2750 watts. A methodology for conducting reliability tests has been developed. Short-term tests for the reliability of diode modules at extreme housing temperatures were carried out. The results of the calculation of the thermal resistance of the junction-housing are presented. To simplify the calculation of the thermal resistance of the junction-housing of the developed module, we will make the following assumptions: the materials used in the design of the module diodes have isotropic thermal conductivity; heat exchange in the internal parts of the structure is carried out only by thermal conductivity; there are no contact resistances between the layers; the power dissipated by the terminals of the diode crystals is negligible compared with the power discharged through the lower base into the heat sink; the side surfaces of the thermal model are insulated; each layer of the same material is homogeneous and has a thermal conductivity coefficient determined by the average temperature of the layer; the influence of the thermal effect of neighboring crystals of the module is not taken into account. The algorithm of stationary thermal regime (method of equivalents) of Appendix N OST 11 0944-96 is chosen as the basis of calculation.

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Grekhov, Igor' V., i Gennadii A. Mesyats. "Nanosecond semiconductor diodes for pulsed power switching". Physics-Uspekhi 48, nr 7 (31.07.2005): 703–12. http://dx.doi.org/10.1070/pu2005v048n07abeh002471.

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Grehov, Igor' V., i Gennadii A. Mesyats. "Nanosecond semiconductor diodes for pulsed power switching". Uspekhi Fizicheskih Nauk 175, nr 7 (2005): 735. http://dx.doi.org/10.3367/ufnr.0175.200507c.0735.

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Alatise, Olayiwola, Arkadeep Deb, Erfan Bashar, Jose Ortiz Gonzalez, Saeed Jahdi i Walid Issa. "A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability". Energies 16, nr 11 (28.05.2023): 4380. http://dx.doi.org/10.3390/en16114380.

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This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging (350 kW and above); (ii) road electrification with overhead catenaries supplying power through a pantograph to the HGV powertrain; (iii) hydrogen supplying power to the powertrain through a fuel cell; (iv) any combination of the first three technologies. At the heart of the HGV powertrain is the power converter implemented through power semiconductor devices. Given that the HGV powertrain is rated typically between 500 kW and 1 MW, power devices with voltage ratings between 650 V and 1200 V are required for the off-board/on-board charger’s rectifier and DC-DC converter as well as the powertrain DC-AC traction inverter. The power devices available for HGV electrification at 650 V and 1.2 kV levels are SiC planar MOSFETs, SiC Trench MOSFETs, silicon super-junction MOSFETs, SiC Cascode JFETs, GaN HEMTs, GaN Cascode HEMTs and silicon IGBTs. The MOSFETs can be implemented with anti-parallel SiC Schottky diodes or can rely on their body diodes for third quadrant operation. This review examines the various power semiconductor technologies in terms of losses, electrothermal ruggedness under short circuits, avalanche ruggedness, body diode and conduction performance.

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Plesca, Adrian, i Lucian Mihet-Popa. "Thermal Analysis of Power Rectifiers in Steady-State Conditions". Energies 13, nr 8 (15.04.2020): 1942. http://dx.doi.org/10.3390/en13081942.

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Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the temperature of the semiconductor junction reaches high values to determine thermal runaway and melting. The paper proposes a mathematical model to calculate the junction and the case temperature in power diodes used in bridge rectifiers, which supplies an inductive-resistive load. The new thermal model may be used to investigate the thermal behavior of the power diodes in steady-state regime for various values of the tightening torque, direct current through the diode, airflow speed and load parameters (resistance and inductance). The obtained computed values were compared with 3D thermal simulation results and experimental tests. The calculated values are aligned with the simulation results and experimental data.

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Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization". WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (30.06.2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.

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Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. This model is based on the continuity equation system solution by reducing the boundary problem for the differential partial equations to a system of the ordinary differential equations. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for analysis, optimization and practical design of pulsed-mode millimetric IMPATT diodes. Its can be also utilized for diode thermal regime estimation, for the proper selection of feed-pulse shape and amplitude, and for the development of the different type of complex doping-profile high-power pulsed millimetric IMPATT diodes with improved characteristics.

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Karushkin, M. F. "Frequency multipliers on semiconductor diode structures". Технология и конструирование в электронной аппаратуре, nr 3 (2018): 22–37. http://dx.doi.org/10.15222/tkea2018.3.22.

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Obvious advantages of the millimeter wave technology including a large information capacity, high directivity of radiation, diagnostics and spectroscopy capabilities of different environments, including the methods of electron paramagnetic resonance and high resolution nuclear magnetic resonance have led to the rapid development of techniques for that range throughout the world. These advantages determine the attractiveness of the practical application of millimeter wavelengths to create high-speed communication links, high-precision radar, chemicals identification device and other equipment. Important role in the development of millimeter and sub-millimeter wave ranges belongs to the frequency multipliers development. This paper analyzes the main trends of modern development of efficient frequency multipliers on semiconductor diode structures, which are based on different physical principles, namely diode harmonic generators; frequency multipliers based on nonlinear dependencies of their reactive parameters on the voltage; frequency multipliers of high multiplicity on IMPATT diodes operating in mode of pulse exciting oscillations at high frequencies; multipliers on complex heterostructures and quantum super lattices in the terahertz range. The paper presents design solutions for frequency multipliers with various configurations and ways of optimizing the diode structures and operation modes that ensure their effective functioning in the frequency multiplication mode. The connection of electric parameters of frequency multipliers with output characteristics of microwave devices is determined. The given review of the results on designing power sources based on multiplying diodes indicates significant advances in this field and rapid development of the electronic component base in the short-wave part of the microwave spectrum. Further development of the technique of multiplying diodes will move forward not only in the direction of increasing the working capacity, but also in solving the problem of microminiaturization. In this regard, the emergence of heteroepitaxial multilayer varactor structures should be noted. Such structures are made with molecular beam epitaxy and have all the advantages of a composite varactor, but at the same time have better thermal characteristics and good prospects for their applications in the terahertz range.

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Mecke, R. "Multilevel inverter with active clamping diodes for energy efficiency improvement". Renewable Energy and Power Quality Journal 20 (wrzesień 2022): 138–42. http://dx.doi.org/10.24084/repqj20.245.

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Multilevel inverters can replace commonly used two-level inverters for three-phase electrical drives. In this lowvoltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. In the four-, five- and sevenlevel inverters, the majority of the power losses are caused by the threshold voltage of the clamping diodes. The new idea is the replacement of the clamping diodes by active switches, since they only have low on-resistance in the forward direction. In this case freewheeling paths of the clamping diodes would have to be actively switched. However, the control signals for the clamping switches can be generated by logic operations from the control signals for the main switches. The use of active clamping switches has significant potential to reduce semiconductor losses, but requires the development of wide-bandgap power semiconductors with reverse blocking capability. At nominal motor operation point of the 5.5 kW induction motor a loss reduction of 56 % between active clamping switches and clamping diodes is possible. With a higher number of inverter levels, the size of the motor filter can be reduced by about 70 % and also the losses can be reduced by 73 %.

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Ivanov A.S., Pavelyev D.G., Obolensky S.V. i Obolenskaya E.S. "Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier". Technical Physics 92, nr 13 (2022): 2071. http://dx.doi.org/10.21883/tp.2022.13.52223.133-21.

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The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically. Keywords: radiation hardness, superlattice, Gunn diode, terahertz.

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Kitabatake, M., J. Sameshima, Osamu Ishiyama, K. Tamura, H. Ohshima, N. Sigiyama, Y. Yamashita, T. Tanaka, J. Senzaki i H. Matsuhata. "The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films". Materials Science Forum 740-742 (styczeń 2013): 451–54. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.451.

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It has been widely accepted that wide-band-gap semiconductor SiC can provide low-loss semiconductor switches and diodes for the power electronics applications. The SiC devices enable the low-loss and compact converters and inverters.

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Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi i N. Ummal Salmaan. "Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics". International Journal of Polymer Science 2022 (13.09.2022): 1–10. http://dx.doi.org/10.1155/2022/8331886.

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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characteristics like conductivity, charge selectivity, flexibility, and lightweight make them eligible for their selection in fabrication process for wearable electronics devices. In this article, the performance of PIN diodes (BAR64-02) as an RF switch is investigated from 1 to 10 GHz. PIN diodes can control large amounts of RF power at very low DC voltage, implying their suitability for RF applications. In this paper, the benefit of using plastic polymer composites for the fabrication of PIN diodes, capacitors, and antennas is thoroughly described. Along with this, individual characterization, fabrication, and testing of all biasing components are also done to analyze the individual effect of each biasing component on the performance of PIN diodes. The complete biasing circuitry for the PIN diode is modeled in the HFSS software. When a PIN diode is inserted in between 50 Ω microstrip line, it introduces 1 dB insertion loss and 20 dB isolation loss from 1 to 7 GHz. Finally, a PIN diode is integrated in a reconfigurable antenna to study the actual effect. The transmission loss in the RF signal is nearly 1 dB from 1 to 7 GHz in the presence of biasing components.

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Harada, T., S. Ito i A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation". Science Advances 5, nr 10 (październik 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.

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High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

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Иванов, А. С., Д. Г. Павельев, С. В. Оболенский i Е. С. Оболенская. "Радиационная стойкость источника субтерагерцового излучения из гетеродина на генераторе на диоде Ганна и умножителя на полупроводниковой сверхрешетке". Журнал технической физики 91, nr 10 (2021): 1501. http://dx.doi.org/10.21883/jtf.2021.10.51362.133-21.

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The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically.

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Zakutayev, Andriy. "(Invited) Ga₂O₃ Semiconductor Devices for High-Temperature Operation". ECS Meeting Abstracts MA2024-01, nr 32 (9.08.2024): 1558. http://dx.doi.org/10.1149/ma2024-01321558mtgabs.

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Beta phase of gallium oxide (Ga2O3) has attracted a lot of attention as an ultra-wide band gap semiconductor for applications in high-power electronic devices. High power operation often comes with increased temperatures of the devices due to joule heating, especially in semiconductors like Ga2O3with low thermal conductivity. However, electrical performance and reliability of the Ga2O3based diodes and transistors at very high temperature, above 400C, is not well established. In this talk, I will present our recent experimental results on fabrication of Ga2O3semiconductor devices for applications as high-temperature diodes and hydrogen gas sensors. The fabricated Ga2O3/NiO p-n heterojunctions allow for device operation with >100-1000 rectification ratio up to 400-600C [1]. Despite the stable ultrathin Ohmic contact [2], the device performance degrades over tens of temperature cycles and hundreds of hours at these elevated temperatures, likely due to instability of the rectifying contact. We propose and implement alternative interfacial rectifying contact layers, that enable both high performance and long reliability of these high temperature Ga2O3 semiconductor devices. [1] Sohel, Zakutayev et al Physica Status Solidi (a) 220 2300535 (2023) [2] Callahan, Zakutayev et al J. Vac. Sci. Technol. A 41, 043211 (2023)

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Shenai, Krishna, i Abhiroop Chattopadhyay. "Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes". IEEE Transactions on Electron Devices 62, nr 2 (luty 2015): 359–65. http://dx.doi.org/10.1109/ted.2014.2371775.

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Kim, Junghun, i Kwangsoo Kim. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance". Energies 13, nr 18 (4.09.2020): 4602. http://dx.doi.org/10.3390/en13184602.

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In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body diodes. The switching characteristics of the proposed MOSFET using the heterojunction diode as a freewheeling diode was compared to the power module with a conventional MOSFET and an external diode as a freewheeling diode. It is shown that the switching performance of the proposed structure exhibits equivalent characteristics compared to the power module, enabling the elimination of an external freewheeling diode in the power system.

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Sticklus, Jan, Peter Adam Hoeher i Martin Hieronymi. "Experimental Characterization of Single-Color Power LEDs Used as Photodetectors". Sensors 20, nr 18 (11.09.2020): 5200. http://dx.doi.org/10.3390/s20185200.

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Semiconductor-based light emitting diodes can be used for photon emission as well as for detection of photons. In this paper, we present a fair comparison between off-the-shelf power Light emitting diodes (LEDs) and a silicon photodetector with respect to their spectral, temporal, and spatial properties. The examined LED series features unexpected good sensitivity and distinct optical bandpass characteristic suitable for daylight filtering or color selectivity. Primary application is short range optical underwater communication, but results are generally applicable.

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Nakayama, Koji, Takeharu Kuroiwa i Hiroshi Yamaguchi. "13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters". Japanese Journal of Applied Physics 61, nr 1 (22.12.2021): 014001. http://dx.doi.org/10.35848/1347-4065/ac3725.

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Abstract Power electronics utilizing SiC power devices will become key components in next-generation power systems based on renewable energy, which are becoming an urgent issue worldwide. In this study, the on-characteristics and switching characteristics of 13 kV SiC-double-implanted metal-oxide-semiconductor field-effect transistors (DMOSFETs) and their body diodes were measured. In particular, the carrier lifetime, which has a significant effect on electrical characteristics, was estimated from the dynamic characteristics of the body diodes. The short carrier lifetime resulted in a large on-state voltage and a small reverse recovery loss of the body diode. Moreover, a conceptual design of a modular multilevel converter-based high-voltage, large-capacity, and self-excited AC/DC converter with 13 kV SiC-DMOSFETs was conducted, and its characteristics were investigated. When the 13 kV SiC-DMOSFETs were applied, the ratio of the total device loss to the electricity power of the converter was 1.10%, which is a significant reduction of 50% compared with 2.17% when 6.5 kV Si-insulated gate bipolar transistors were used.

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Duyen-Thi Nguyen, Khanh Nguyen, Duc-Minh Truong i Huy-Binh Do. "Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study". Journal of Technical Education Science 19, SI03 (28.08.2024): 7–12. http://dx.doi.org/10.54644/jte.2024.1481.

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Ga2O3 and GaN are promising candidates for the fabrication of high power semiconductor devices due to their wide band-gap range, deteremined from 3.0 eV to 4.9 eV. Among these materials, the GaN/Ga2O3 P-N junction diode has an excellent performance even at high temperatures, making it suitable for high-power applications. In this work, GaN/Ga2O3 P-N junction diodes are investigated using computer-aided design (TCAD) simulations. The properties of the diode were optimized in terms of the thickness of the p-type GaN layer and its doping concentration. It was found that the current-voltage (IV) characteristic of the diode decreases as the thickness of GaN layer increases. To achieve a high current output, the optimized thickness is determined to be 500 nm. Furthermore, the doping concentration within the diode strongly influences the output current. The highest current is obtained for an un-doped GaN sample, and the increase in the doping concentration leads to a decrease in the obtained current.

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Lau, Wai Shing. "Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II". ECS Meeting Abstracts MA2022-01, nr 31 (7.07.2022): 1323. http://dx.doi.org/10.1149/ma2022-01311323mtgabs.

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The bandgap of Ga2O3 (4.5-4.9 eV) is larger than the bandgap of GaN (3.4 eV). In addition, single crystal bulk Ga2O3 wafers can be more easily manufactured than GaN wafers. Therefore, Ga2O3 has strong potential for applications in high power semiconductor devices [1]. Schottky diodes fabricated on n-type Ga2O3 have strong potential as fast high-power switching devices. Similarly, the bandgap of diamond (5.5 eV) is very large and diamond Schottky diodes have good potential. One possible mechanism of reverse leakage current in Schottky diodes is image force barrier lowering at the metal-semiconductor interface. Historically, there were 2 theories regarding the image force barrier lowering effect. In 1953, Krömer published his theory that the image force dielectric constant in the equation for Schottky emission should be equal to 1 [2]. Subsequently in 1964, Sze et al. published their theory that the image force dielectric constant in the equation for Schottky emission should be equal to n2 [3], where n is the refractive index of the semiconductor in the infrared or visible light range. In 1969, Sze published a book which has influenced many scientists [4]. Sze’s theory [3]-[4] quickly became the dominating theory whereas Krömer’s theory essentially became a forgotten theory. In 2020, the author pointed out that Krömer’s theory is quite frequently more compatible with experimental results for Ga2O3 or diamond Schottky diodes [5]. In 2021, the author attempted to propose a new theory involving the concept of electron velocity overshoot to unify Krömer’s theory and Sze’s theory, as shown in Fig. 1 [6]; Krömer’s theory is better than Sze’s theory for high reverse bias voltage. In conclusion, the author pointed out that it is necessary to resurrect an old and forgotten theory from Krömer in order to explain the experimental data on the reverse leakage current of Schottky diodes fabricated on large bandgap semiconductors like Ga2O3 and diamond, etc. A theoretical basis based on quasi-ballistic transport will be provided. References [1] M. Higashiwaki, H. Murakami, Y. Kumagai and A. Kuramata, Jpn. J. Appl. Phys., 55, 1202A1 (2016). [2] H. Krömer, Zeitschrift fur Physik, 134, 435 (1953). (In German.) [3] S.M. Sze, C.R. Crowell and D. Kahng, J. Appl. Phys., 35, 2534 (1964). [4] S.M. Sze, Physics of Semiconductor Devices, p. 367, Wiley Interscience, New York (1969). [5] W.S. Lau, ECS Trans. 97 (4), 99 (2020). [6] W.S. Lau, CSTIC 2021 (China Semiconductor Technology International Conference, Shanghai, 2021, IEEE), 1 (2021). (Available from IEEE database.) Figure 1

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30

Das, Mrinal K., David Grider, Scott Leslie, Ravi Raju, Michael Schutten i Allen Hefner. "10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies". Materials Science Forum 717-720 (maj 2012): 1225–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1225.

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The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. Twenty-four MOSFETs and twelve JBS diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.

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Majdoul, Radouane, Abelwahed Touati, Abderrahmane Ouchatti, Abderrahim Taouni i Elhassane Abdelmounim. "A nine-switch nine-level converter new topology with optimal modulation control". International Journal of Power Electronics and Drive Systems (IJPEDS) 12, nr 2 (1.06.2021): 932. http://dx.doi.org/10.11591/ijpeds.v12.i2.pp932-942.

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<span lang="EN-US">Multilevel power converters are becoming increasingly used in several sectors: energy, grid-tie renewable energy systems, High voltage direct current (HVDC) power transmission, and a multitude of industrial applications. However, the multilevel converters consist of several drives and a high number of power switches, which leads to a considerable cost and an increased size of the device. Thus, a novel topology of a multilevel bidirectional inverter using a reduced number of semiconductor power components is proposed in this paper. Without any diode clamped or flying capacitor, only nine switches are used to generate nine voltage levels in this new topology. The proposed multilevel converter is compared with the conventional structures in terms of cost, the number of active power switches, clamped diodes, flying capacitors, DC floating capacitors, and the number of DC voltage sources. This comparative analysis shows that the proposed topology is suitable for many applications. For optimum control of this multilevel voltage inverter and to reduce switching losses in power semiconductors, a hybrid modulation technique based on fundamental frequency modulation and multi-carrier-based sinusoidal pulse-width modulation schemes is performed. The effectiveness of the proposed multilevel power converter is verified by simulation results.</span>

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Ivanov, Pavel A., i Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode". Materials Science Forum 740-742 (styczeń 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm2 peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5 - 25 kA/cm2 in a time less than 0.3 ns.

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LAUDATU, OVIDIU-DORIN, DRAGOS NICULAE, MIHAI IORDACHE, MARIA-LAVINIA BOBARU i MARILENA STĂNCULESCU. "EXPERIMENTAL ANALYSIS OF POWER SEMICONDUCTOR ELEMENTS USED IN FLYBACK CONVERTERS". REVUE ROUMAINE DES SCIENCES TECHNIQUES — SÉRIE ÉLECTROTECHNIQUE ET ÉNERGÉTIQUE 69, nr 1 (4.04.2024): 67–72. http://dx.doi.org/10.59277/rrst-ee.2024.1.12.

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Switch-mode power supplies (SMPS) have become very popular lately due to their superior efficiency and compact dimensions as compared to conventional counterparts which contain low-frequency transformers. This efficiency and miniaturization are connected to several factors, including high operating frequencies typically in the kHz to MHz range, the utilization of ferromagnetic materials for inductive coupling, and the incorporation of active switching components to mitigate energy loss via the Joule-Lenz effect. Enhancing SMPS efficiency implies active circuit elements (diodes, transistors, etc.) sizing and arrangements. This paper presents a practical approach by addressing a series of experiments to analyze and compare the performance of different active components. It starts with the analysis of the PWM generator module from the primary and continues with the field-effect transistors and rectifier diodes in the secondary. The asynchronous flyback topology has been chosen to carry out the experiments. By using the same experimental platform, based on the obtained results, the analysis of behavioral differences between the different components has been performed.

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Leppänen, J., G. Ross, V. Vuorinen, J. Ingman, J. Jormanainen i M. Paulasto-Kröckel. "A humidity-induced novel failure mechanism in power semiconductor diodes". Microelectronics Reliability 123 (sierpień 2021): 114207. http://dx.doi.org/10.1016/j.microrel.2021.114207.

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MATSUMOTO, Mitsuhiro, i Takashi YABE. "GaAs/AlGaAs High-Power Semiconductor Laser Diodes for Optical Disks." Review of Laser Engineering 24, nr 3 (1996): 380–87. http://dx.doi.org/10.2184/lsj.24.380.

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Kobayashi, K., i I. Mito. "High light output-power single-longitudinal-mode semiconductor laser diodes". IEEE Transactions on Electron Devices 32, nr 12 (grudzień 1985): 2594–602. http://dx.doi.org/10.1109/t-ed.1985.22389.

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Henderson, I. A., i J. McGhee. "A boundary determined Auger recombination model for semiconductor power diodes". Mathematical Modelling 8 (1987): 279–82. http://dx.doi.org/10.1016/0270-0255(87)90590-2.

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Kobayashi, K., i I. Mito. "High light output-power single-longitudinal-mode semiconductor laser diodes". Journal of Lightwave Technology 3, nr 6 (1985): 1202–10. http://dx.doi.org/10.1109/jlt.1985.1074335.

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Uzuka, Tetsuo, i Eisuke Masada. "High Speed Rail Awaits the next Breakthrough of Power Semiconductors". Materials Science Forum 778-780 (luty 2014): 1071–76. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1071.

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High Speed Rail (HSR) is expanding rapidly in the whole world in this decade. Almost all the high-speed trains are fed by high-voltage AC and are equipped with several large motors. In addition, High-speed trains have a strict restriction for both mass and size. Thus, HSR needs power semiconductors that can handle high-voltage and giant current. In addition, EMC problems become larger in these days, thus higher speed of switching is expected. From simple silicon diodes in 1960s, thyristors, GTO thyristors, IGBTs and until new wide gap devices such like SiC, the progress of power semiconductor and cooling system directly pulls the performance of high-speed rolling stock. In some cases, fixed installations for HSR are equipped with flexible AC transmission systems (FACTS) such as static VAR compensators (SVC), also.

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Rouger, Nicolas, i Aurélien Maréchal. "Design of Diamond Power Devices: Application to Schottky Barrier Diodes". Energies 12, nr 12 (21.06.2019): 2387. http://dx.doi.org/10.3390/en12122387.

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Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

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Dang, Chaoqun, Anliang Lu, Heyi Wang, Hongti Zhang i Yang Lu. "Diamond semiconductor and elastic strain engineering". Journal of Semiconductors 43, nr 2 (1.02.2022): 021801. http://dx.doi.org/10.1088/1674-4926/43/2/021801.

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Abstract Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the “elastic strain engineering” strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.

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Chughtai, M. T. "A Realization of Stabilizing the Output Light Power from a Laser Diode: A Practical Approach". Engineering, Technology & Applied Science Research 11, nr 4 (21.08.2021): 7370–74. http://dx.doi.org/10.48084/etasr.4276.

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Semiconductor Laser Diodes (LDs) are known for their sensitivity to variation in ambient temperature. With the rise in case temperature the threshold current of the LD increases, causing the output light power to deteriorate drastically. Therefore, it is necessary to stabilize the temperature of the diode. Various approaches could be adopted in this regard. In this paper, an active cooling approach using the temperature compensation technique has been followed and presented in the form of a full design of the circuit according to the various datasheet parameters of the LD and other components. As a result of temperature stabilization, a significant improvement in the output light power stabilization was observed and the results are presented.

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Bourget, C. Michael. "An Introduction to Light-emitting Diodes". HortScience 43, nr 7 (grudzień 2008): 1944–46. http://dx.doi.org/10.21273/hortsci.43.7.1944.

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Light-emitting diodes (LEDs) are semiconductor devices that produce noncoherent, narrow-spectrum light when forward voltage is applied. LEDs range in wavelength from the UVC band to infrared (IR) and are available in packages ranging from milliwatts to more than 10 W. The first LED was an IR-emitting device and was patented in 1961. In 1962, the first practical visible spectrum LED was developed. The first high-power (1-W) LEDs were developed in the late 1990s. LEDs create light through a semiconductor process rather than with a superheated element, ionized gas, or an arc discharge as in traditional light sources. The wavelength of the light emitted is determined by the materials used to form the semiconductor junction. LEDs produce more light per electrical watt than incandescent lamps with the latest devices rivaling fluorescent tubes in energy efficiency. They are solid-state devices, which are much more robust than any glass-envelope lamp and contain no hazardous materials like fluorescent lamps. LEDs also have a much longer lifetime than incandescent, fluorescent, and high-density discharge lamps (U.S. Dept. of Energy). Although LEDs possess many advantages over traditional light sources, a total system approach must be considered when designing an LED-based lighting system. LEDs do not radiate heat directly, but do produce heat that must be removed to ensure maximum performance and lifetime. LEDs require a constant-current DC power source rather than a standard AC line voltage. Finally, because LEDs are directional light sources, external optics may be necessary to produce the desired light distribution. A properly designed LED light system is capable of providing performance and a lifetime well beyond any traditional lighting source.

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Ahmad, Habib, Zachary Engel, Christopher M. Matthews, Sangho Lee i W. Alan Doolittle. "Realization of homojunction PN AlN diodes". Journal of Applied Physics 131, nr 17 (7.05.2022): 175701. http://dx.doi.org/10.1063/5.0086314.

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Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a semiconductor via impurity doping. Some of the historic challenges for successfully doping AlN include a reconfigurable defect formation known as a DX center and subsequent compensation that causes an increase in dopant activation energy resulting in very few carriers of electricity, electrons, or holes, rendering doping inefficient. Using crystal synthesis methods that generate less compensating impurities and less lattice expansion, thus impeding the reconfiguration of dopants, and using new dopants, we demonstrate: (a) well behaved bulk semiconducting functionality in AlN, the largest direct bandgap semiconductor known with (b) substantial bulk p-type conduction (holes = 3.1 × 1018 cm−3, as recently reported in our prior work), (c) dramatic improvement in n-type bulk conduction (electrons = 6 × 1018 cm−3, nearly 6000 times the prior state-of-the-art), and (d) a PN AlN diode with a nearly ideal turn-on voltage of ∼6 V for a 6.1 eV bandgap semiconductor. A wide variety of AlN-based applications are enabled that will impact deep ultraviolet light-based viral and bacterial sterilization, polymer curing, lithography, laser machining, high-temperature, high-voltage, and high-power electronics.

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Grgić, Ivan, Dinko Vukadinović, Mateo Bašić i Matija Bubalo. "Calculation of Semiconductor Power Losses of a Three-Phase Quasi-Z-Source Inverter". Electronics 9, nr 10 (6.10.2020): 1642. http://dx.doi.org/10.3390/electronics9101642.

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This paper presents two novel algorithms for the calculation of semiconductor losses of a three-phase quasi-Z-source inverter (qZSI). The conduction and switching losses are calculated based on the output current-voltage characteristics and switching characteristics, respectively, which are provided by the semiconductor device manufacturer. The considered inverter has been operated in a stand-alone operation mode, whereby the sinusoidal pulse width modulation (SPWM) with injected 3rd harmonic has been implemented. The proposed algorithms calculate the losses of the insulated gate bipolar transistors (IGBTs) and the free-wheeling diodes in the inverter bridge, as well as the losses of the impedance network diode. The first considered algorithm requires the mean value of the inverter input voltage, the mean value of the impedance network inductor current, the peak value of the phase current, the modulation index, the duty cycle, and the phase angle between the fundamental output phase current and voltage. Its implementation is feasible only for the Z-source-related topologies with the SPWM. The second considered algorithm requires the instantaneous values of the inverter input voltage, the impedance network diode current, the impedance network inductor current, the phase current, and the duty cycle. However, it does not impose any limitations regarding the inverter topology or switching modulation strategy. The semiconductor losses calculated by the proposed algorithms were compared with the experimentally determined losses. Based on the comparison, the correction factor for the IGBT switching energies was determined so the errors of both the algorithms were reduced to less than 12%.

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Huang, Jack Jia-Sheng, C. K. Wang i Yu-Heng Jan. "Three Cases of Gradual Degradation Mode Analysis of Semiconductor Laser Diodes". Modern Applied Science 15, nr 6 (26.10.2021): 27. http://dx.doi.org/10.5539/mas.v15n6p27.

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Semiconductor laser diodes are important components for various applications such as 5G wireless, datacenter, passive optical network, and aerospace applications. High reliability has emerged to be the universal requirement for all optical applications. To achieve high reliability, fundamental understanding of the laser degradation behavior is crucial. In this paper, we study three cases of gradual degradataion modes of laser diodes including (1) Pattern-A that is associated with threshold current change only, (2) Pattern-B that involve both threshold current and power changes, and (3) Pattern-C that is associated with merely power change. We have instituted reliability equations for the degradation processes. The new reliability models could provide estimation on the laser end-of-life based on the degradation rate and device performance specification.

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47

Chimento, Filippo, Muhammad Nawaz, Niccoló Mora i Salvatore Tomarchio. "A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators". Materials Science Forum 740-742 (styczeń 2013): 1089–92. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1089.

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A simplified model for SiC Power diodes has been developed and implemented in Spice simulator in order to get the advantages of a modular and hierarchical structure that can be easily used for modeling of power semiconductor modules. The proposed approach is based on the lumped charge technique. One of the main targets for the proposed model is the implementation of a modeling structure starting from the evaluation and simplification of the semiconductor equations. The paper will show the implementation of the model along with an experimental evaluation of the proposed method.

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Karushkin, M. F. "Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 2. Stabilizing microwave parameters of synchronized generators". Технология и конструирование в электронной аппаратуре, nr 3-4 (2021): 17–29. http://dx.doi.org/10.15222/tkea2021.3-4.17.

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This is the second part of the two-part article, which summarizes the state-of-the-art results in the development of synchronized oscillators based on IMPATT (IMPact ionization Avalanche Transit-Time) diodes. The first part of the paper presented the electrodynamic design of oscillators, which contain a resonant oscillatory system with silicon IMPATT diodes and are synchronized by an external source of microwave oscillations. The second part of the paper considers the methods for stabilizing the parameters of IMPATT oscillators, which make it possible to create coherent power sources in the millimeter wavelength range. The specifics of pulse generators lies in the change in frequency within the microwave pulse relative to the change in temperature, which leads to a change in the impedance of the diode and thus to a phase change with respect to the synchronizing signal. Phase modulation is reduced or completely eliminated (which is necessary to ensure the coherence of the microwave transmitter) by using current compensation, i.e., by using the control current pulse with a special shape. The study demonstrates the expediency of introducing additional heating of the semiconductor structure of the IMPATT diode, which allows the initial temperature of the IMPATT diode in the region of the leading edge of each pulse to remain virtually constant and independent of the ambient temperature. Using these methods on silicon double-drift IMPATT diodes allowed creating synchronized oscillators with high frequency stability and an output power level from 20 to 150 W, which have a high degree of coherence in the synchronization mode with an external signal. The paper also presents the designs and parameters of coherent microwave power sources in the short-wave part of the millimeter wavelength range using the nonlinear properties of the IMPATT diodes in the radio-pulse conversion mode. This mode makes it possible to provide the output power level of the signal at the n-th harmonic Pout ≈1/n, which significantly exceeds the achieved characteristics of the frequency multipliers with charge accumulation, where Pout ≈ 1/n2. The output power of such devices is achieved at the level of 50–20 mW in the 75–180 GHz frequency range with a frequency multiplication factor of 1–15.

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Han, Lili, Zhaowei Wang, Nikita Yu Gordeev, Mikhail V. Maximov, Xiansheng Tang, Artem A. Beckman, Grigoriy O. Kornyshov i in. "Progress of Edge-Emitting Diode Lasers Based on Coupled-Waveguide Concept". Micromachines 14, nr 6 (20.06.2023): 1271. http://dx.doi.org/10.3390/mi14061271.

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Semiconductor lasers have developed rapidly with the steady growth of the global laser market. The use of semiconductor laser diodes is currently considered to be the most advanced option for achieving the optimal combination of efficiency, energy consumption, and cost parameters of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering in planar waveguides is investigated. The approach referred to as Coupled Large Optical Cavity (CLOC) is based on the resonant optical coupling between waveguides and allows the selection of high-order modes. The state-of-art of the CLOC operation is reviewed and discussed. We apply the CLOC concept in our waveguide design strategy. The results in both numerical simulation and experiment show that the CLOC approach can be considered a simple and cost-efficient solution for improving diode laser performance.

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50

Sužiedėlis, Algirdas, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela i Maksimas Anbinderis. "Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures". Sensors 23, nr 3 (28.01.2023): 1441. http://dx.doi.org/10.3390/s23031441.

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The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor structures meet these requirements. These diodes operate on the basis of free-carrier heating in microwave electric fields, which allows for the use of such sensors in millimeter- and submillimeter-wavelength ranges. However, there still exists some uncertainty concerning the origin of the voltage detected across these diodes. This work provides a more detailed analysis of the detection mechanisms in InAlAs/InGaAs selectively doped bow-tie-shaped semiconductor structures. The influence of the InAs inserts in the InGaAs layer is investigated under various illumination and temperature conditions. A study of the voltage–power characteristics, the voltage sensitivity dependence on frequency in the Ka range, temperature dependence of the detected voltage and its relaxation characteristics lead to the conclusion that a photo-gradient electromotive force arises in bow-tie diodes under simultaneous light illumination and microwave radiation.

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