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Artykuły w czasopismach na temat "Power MOSFETs"
Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen i John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, nr 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Pełny tekst źródłaFunaki, Tsuyoshi, Yuki Nakano i Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation". Materials Science Forum 717-720 (maj 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Pełny tekst źródłaEjury, Jens. "Advanced Thermal Simulation Model for Power MOSFETs". International Symposium on Microelectronics 2013, nr 1 (1.01.2013): 000598–603. http://dx.doi.org/10.4071/isom-2013-wa64.
Pełny tekst źródłaPrado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori i José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications". Energies 15, nr 14 (20.07.2022): 5244. http://dx.doi.org/10.3390/en15145244.
Pełny tekst źródłaMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre i Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules". Materials Science Forum 645-648 (kwiecień 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Pełny tekst źródłaJadli, Utkarsh, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi i Sima Dimitrijev. "A Method for Selection of Power MOSFETs to Minimize Power Dissipation". Electronics 10, nr 17 (3.09.2021): 2150. http://dx.doi.org/10.3390/electronics10172150.
Pełny tekst źródłaLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen i John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout". Materials Science Forum 924 (czerwiec 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Pełny tekst źródłaKampitsis, Georgios E., Stavros A. Papathanassiou i Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits". Materials Science Forum 856 (maj 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.
Pełny tekst źródłaKannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong i Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs". International Journal of Electrical and Computer Engineering (IJECE) 9, nr 2 (1.04.2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.
Pełny tekst źródłaBottaro, Enrico, Santi Agatino Rizzo i Nunzio Salerno. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review". Energies 15, nr 9 (7.05.2022): 3415. http://dx.doi.org/10.3390/en15093415.
Pełny tekst źródłaRozprawy doktorskie na temat "Power MOSFETs"
Amberetu, Mathew Atekwana. "Lateral superjunction power MOSFETs". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63012.pdf.
Pełny tekst źródłaDharmawardana, Kahanawita Gamaethiralalage Padmapani. "High performance power MOSFETs". Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621963.
Pełny tekst źródłaLeedham, Robert John. "High frequency switching with power MOSFETs". Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627468.
Pełny tekst źródłaChen, Yuhui. "Resonant Gate Drive Techniques for Power MOSFETs". Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/10099.
Pełny tekst źródłaMaster of Science
Xiangxiang, Fang. "Characterization and Modeling of SiC Power MOSFETs". The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1354687371.
Pełny tekst źródłaLiu, Jingjing Michelle. "Strain induced effects on lateral power MOSFETs". [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0041290.
Pełny tekst źródłaZupac, Dragan 1961. "ESD-induced noncatastrophic damage in power MOSFETs". Thesis, The University of Arizona, 1990. http://hdl.handle.net/10150/291470.
Pełny tekst źródłaDE, GASPERI SERGIO. "Integrated health condition monitoring for power MOSFETs". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/392351.
Pełny tekst źródłaPower semiconductors have a crucial role in conversion and distribution of electric energy. Power MOSFETs, especially, can be found in a large variety of applications, like consumer electronics, automotive or grid applications. Such an ubiquitous technology is indeed subject to unceasing cost-optimization efforts. Minimization of materials usage is the most straightforward way to cost optimization, and it comes together with a decrease in the footprint size of devices. This comes at cost of an increase in power densities, and therfore an increase in heat dissipation per unit area. As a result, during operation, power MOSFETs need to withstand intense thermo-mechanical stress, which is the main reliability concern on many application fields. This thesis is focused on a vertical DMOS technology, for which power metallization degradation is the main stress-related failure cause. A possible way to improve reliability of power MOSFETs is to implement in-situ prognostic health management capabilities: in this thesis, two implementation methods are experimentally investigated. The first method consists of building a non-vital structure that shares the same degradation driving force as power metallization, although the degradation process is different. Thermo-mechanical stress results in the formation of short circuits into the non-vital structure, which are electrically detectable. The second method here proposed relies on local temperature measurements in different spots of the DMOS during power transients. Power metallization degradation leads to failure precisely because it modifies the thermal behavior of the device, therefore, temperature measurements may allow to directly observe the outcome of degradation. Experiments partially validate the investigated health monitoring principles, but the implementation tested so far are not reliable enough for industrial application. For both experiments, time limitations and the need for different actions in very diverse fields (circuit design, technology development, test engineering, materials science) posed a remarkable challenge. As a result, the experience acquired in the development of the two techniques shaped a concept for a third solution, that is only conceptually described in the last part of this thesis. As a conclusion, this thesis demonstrates that innovative solutions to the problem can be developed through an effort on different fields of expertise, and the achieved preliminary results pose a promising outlook for further investigations, which may successfully develop robust and reliable implementations.
Safarjameh, Kourosh 1961. "Fast-neutron-induced resistivity change in power MOSFETs". Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277011.
Pełny tekst źródłaFayyaz, Asad. "Performance and robustness characterisation of SiC power MOSFETs". Thesis, University of Nottingham, 2018. http://eprints.nottingham.ac.uk/48937/.
Pełny tekst źródłaKsiążki na temat "Power MOSFETs"
(Firm), Harris Semiconductor. Power MOSFETs: Buffered MOSFETs, intelligent discretes. Melbourne, Florida: Harris Semiconductor, 1994.
Znajdź pełny tekst źródłaKorec, Jacek. Low Voltage Power MOSFETs. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9320-5.
Pełny tekst źródłaBaliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.
Znajdź pełny tekst źródłaSilicon RF power MOSFETS. Singapore: World Scientific, 2005.
Znajdź pełny tekst źródłaAmberetu, Mathew Atekwana. Lateral superjunction power MOSFETs. Ottawa: National Library of Canada, 2001.
Znajdź pełny tekst źródła1945-, Gowar John, red. Power MOSFETS: Theory and applications. New York: Wiley, 1989.
Znajdź pełny tekst źródłaCorporation, Toshiba. Power MOSFETs: SMD, high-voltage. Tokyo: Toshiba Corporation, 1992.
Znajdź pełny tekst źródłaGroves, N. High speed drive circuits for power MOSFETs. Leatherhead: ERA Technology, 1989.
Znajdź pełny tekst źródła(Firm), Harris Semiconductor. Power MOSFETS for commercial and high reliability applications. Melbourne, Florida: Harris Semiconductor, 1991.
Znajdź pełny tekst źródłaKorec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Znajdź pełny tekst źródłaCzęści książek na temat "Power MOSFETs"
Singh, Ranbir, i B. Jayant Baliga. "Power Mosfets". W Cryogenic Operation of Silicon Power Devices, 65–81. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_6.
Pełny tekst źródłaBaliga, B. Jayant. "Power MOSFETs". W Fundamentals of Power Semiconductor Devices, 276–503. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-47314-7_6.
Pełny tekst źródłaBaliga, B. Jayant. "Power MOSFETs". W Fundamentals of Power Semiconductor Devices, 283–520. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93988-9_6.
Pełny tekst źródłaDimitrijev, S., H. B. Harrison, P. Tanner, K. Y. Cheong i J. Han. "Oxidation, MOS Capacitors, and MOSFETs". W SiC Power Materials, 345–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09877-6_9.
Pełny tekst źródłaRossi, D. "Power Mosfets Driving Circuits and Protection Techniques". W Smart Power ICs, 173–223. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-61395-1_5.
Pełny tekst źródłaPeters, Dethard, Reinhold Schoerner, Peter Friedrichs i Dietrich Stephani. "SiC Power MOSFETs – Status, Trends and Challenges". W Silicon Carbide and Related Materials 2005, 1255–60. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1255.
Pełny tekst źródłaGudjónsson, G., Fredrik Allerstam, H. Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar O. Sveinbjörnsson, Herbert Zirath, T. Rödle i R. Jos. "High Power-Density 4H-SiC RF MOSFETs". W Silicon Carbide and Related Materials 2005, 1277–80. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1277.
Pełny tekst źródłaNakamura, Takashi, Mineo Miura, Noriaki Kawamoto, Yuki Nakano, Takukazu Otsuka, Keiji Oku-Mura i Akira Kamisawa. "Development of SiC Diodes, Power MOSFETs and Intelligent Power Modules". W Silicon Carbide, 291–319. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch12.
Pełny tekst źródłaLópez, Toni, Reinhold Elferich i Eduard Alarcón. "Model Level 0: Switching Behavior of Power MOSFETs". W Voltage Regulators for Next Generation Microprocessors, 67–132. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7560-7_2.
Pełny tekst źródłaTanimoto, Satoshi, Hideaki Tanaka, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi i Teruyoshi Mihara. "High-Reliability ONO Gate Dielectric for Power MOSFETs". W Materials Science Forum, 677–80. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.677.
Pełny tekst źródłaStreszczenia konferencji na temat "Power MOSFETs"
Ye, Hua, i Pradeep Haldar. "Development of Cryogenic Power Modules for Superconducting Hybrid Power Electronic System". W ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-69274.
Pełny tekst źródłaLiu, Yong, Howard Allen i Stephen Martin. "Power Stack Die Package Design, Simulation and Reliability Analysis". W ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-40725.
Pełny tekst źródłaKearney, Ian, i Hank Sung. "Integrated ESD Robustness through Device Analysis of Ultra-Small Low Voltage Power MOSFETs". W ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0350.
Pełny tekst źródłaYining, Liu, Wang Renze, Yang Yapeng, Zhang Jiangang, Wang Ning, Feng Zongyang, Jia Linsheng i Liang Boning. "The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot". W 2020 International Conference on Nuclear Engineering collocated with the ASME 2020 Power Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/icone2020-16222.
Pełny tekst źródłaTack, Marnix. "Energy efficient power MOSFETs". W Technology (ICICDT). IEEE, 2010. http://dx.doi.org/10.1109/icicdt.2010.5510264.
Pełny tekst źródłaKearney, Ian, i Stephen Brink. "3D Integrated Power—A Discrete Perspective". W ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0141.
Pełny tekst źródłaZarebski, Janusz, i Rafal Zarebski. "ON-Resistance of Power MOSFETs". W Modern Problems of Radio Engineering, Telecommunications and Computer Science. International Conference, TCSET'2006. IEEE, 2006. http://dx.doi.org/10.1109/tcset.2006.4404476.
Pełny tekst źródłaYamaoka, Masami, Yukio Tsuzuki i Kazunori Kawamoto. "Self-Thermal Protecting Power MOSFETs". W SAE International Congress and Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1988. http://dx.doi.org/10.4271/880411.
Pełny tekst źródłaTsuzuki, Y., M. Yamaoka i K. Kawamoto. "Self-thermal protecting power MOSFETs". W 1987 IEEE Power Electronics Specialists Conference. IEEE, 1987. http://dx.doi.org/10.1109/pesc.1987.7077160.
Pełny tekst źródłaJiang, W., W. Diao i X. Wang. "Marx generator using power mosfets". W 2009 IEEE Pulsed Power Conference (PPC). IEEE, 2009. http://dx.doi.org/10.1109/ppc.2009.5386282.
Pełny tekst źródłaRaporty organizacyjne na temat "Power MOSFETs"
Offord, Bruce, C. Milligan, H. Jazo i J. Meloling. An Ultra Low Power 180-Degree, 1-Bit Phase Shifter using MOSFETS. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2009. http://dx.doi.org/10.21236/ada513799.
Pełny tekst źródłaCook, E. Improving Switching Performance of Power MOSFETs Used in High Rep-Rate, Short Pulse, High-Power Pulsers. Office of Scientific and Technical Information (OSTI), wrzesień 2006. http://dx.doi.org/10.2172/896001.
Pełny tekst źródłaCooper, James A., i Jr. Development of SiC Power MOSFETs with Low On-Resistance for Military and Commercial Applications. Fort Belvoir, VA: Defense Technical Information Center, marzec 2003. http://dx.doi.org/10.21236/ada414680.
Pełny tekst źródłaSbrockey, Nick M., Gary S. Tompa, Michael G. Spencer i Chandra M. V. S. Chandrashekhar. SiC Power MOSFET with Improved Gate Dielectric. Office of Scientific and Technical Information (OSTI), sierpień 2010. http://dx.doi.org/10.2172/1067486.
Pełny tekst źródłaChow, Louis C., i Robert J. Mauriello. Utilizing ISE-TCAD Software to Simulate Power MOSFET Devices Operating at Cryogenic Temperatures. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2001. http://dx.doi.org/10.21236/ada387644.
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