Gotowe bibliografie tematyczne / Polymer Charge Trapping Memory

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Gotowa bibliografia na temat „Polymer Charge Trapping Memory”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Polymer Charge Trapping Memory"

Prime, D., S. Paul i P. W. Josephs-Franks. "Gold nanoparticle charge trapping and relation to organic polymer memory devices". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, nr 1905 (28.10.2009): 4215–25. http://dx.doi.org/10.1098/rsta.2009.0141.

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Nanoparticle-based polymer memory devices (PMDs) are a promising technology that could replace conventional silicon-based electronic memory, offering fast operating speeds, simple device structures and low costs. Here we report on the current state of nanoparticle PMDs and review some of the problems that are still present in the field. We also present new data regarding the charging of gold nanoparticles in metal–insulator–semiconductor capacitors, showing that charging is possible under the application of an electric field with a trapped charge density due to the nanoparticles of 3.3×10 12 cm −2 .

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Casalbore-Miceli, Giuseppe, Nadia Camaioni, Alessandro Geri, Giovanni Ridolfi, Alberto Zanelli, Maria C. Gallazzi, Michele Maggini i Tiziana Benincori. "“Solid state charge trapping”: Examples of polymer systems showing memory effect". Journal of Electroanalytical Chemistry 603, nr 2 (maj 2007): 227–34. http://dx.doi.org/10.1016/j.jelechem.2007.02.007.

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Murari, Nishit M., Ye-Jin Hwang, Felix Sunjoo Kim i Samson A. Jenekhe. "Organic nonvolatile memory devices utilizing intrinsic charge-trapping phenomena in an n-type polymer semiconductor". Organic Electronics 31 (kwiecień 2016): 104–10. http://dx.doi.org/10.1016/j.orgel.2016.01.015.

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Rajeev, V. R., i K. N. Narayanan Unni. "Polymer electret-based organic field-effect transistor memory with a solution-processable bilayer (PαMS/ cross-linked PVP) gate dielectric". European Physical Journal Applied Physics 97 (2022): 17. http://dx.doi.org/10.1051/epjap/2022210175.

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Pentacene based organic field-effect transistors (OFETs) were fabricated, with both cross-linked poly vinyl phenol (CL-PVP) and a bilayer of poly(α-methylstyrene) (PαMS)/ CL-PVP as gate dielectric. The PαMS layer decreases the surface energy of the gate dielectric and increases the hydrophobic nature, which leads to favorable growth of pentacene and the corresponding field-effect mobility, though at a higher gate voltage span, increases three times compared to that of the device with only CL-PVP as the gate dielectric. OFET with bilayer polymer gate dielectric exhibited non-volatile memory behavior with an on-off ratio 103, retention time >103 s and a large memory window of −25 V. The memory effect observed in the device was due to the charge trapping in the PαMS layer, with CL-PVP acting as a blocking dielectric. Our studies indicate that the bilayer dielectric, comprising of solution-processable PαMS/CL-PVP is a good choice for obtaining non-volatile electret memory on an OFET platform.

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Wu, Chao, Yongping Dan, Wei Wang, Xiangyang Lu i Xinqiang Wang. "Solution processed nonvolatile polymer transistor memory with discrete distributing molecular semiconductor microdomains as the charge trapping sites". Semiconductor Science and Technology 33, nr 9 (30.07.2018): 095003. http://dx.doi.org/10.1088/1361-6641/aad2b9.

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He, Dongwei, Hao Zhuang, Haifeng Liu, Hongzhang Liu, Hua Li i Jianmei Lu. "Adjustment of conformation change and charge trapping in ion-doped polymers to achieve ternary memory performance". Journal of Materials Chemistry C 1, nr 47 (2013): 7883. http://dx.doi.org/10.1039/c3tc31759e.

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Baeg, Kang-Jun, Yong-Young Noh i Dong-Yu Kim. "Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications". Solid-State Electronics 53, nr 11 (listopad 2009): 1165–68. http://dx.doi.org/10.1016/j.sse.2009.07.003.

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Ling, Haifeng, Wen Li, Huanqun Li, Mingdong Yi, Linghai Xie, Laiyuan Wang, Yangxing Ma, Yan Bao, Fengning Guo i Wei Huang. "Effect of thickness of polymer electret on charge trapping properties of pentacene-based nonvolatile field-effect transistor memory". Organic Electronics 43 (kwiecień 2017): 222–28. http://dx.doi.org/10.1016/j.orgel.2017.01.017.

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Zhang, Bo, Qihang Gao, Boping Wang, Hong Wang, Chao Lu, Jiashu Gao, Rui Zhao i Xiaobing Yan. "Effects of oxygen conditions during deposition on memory performance of metal/HfO2/SiO2/Si structured charge trapping memory". Materials Research Express 6, nr 8 (10.05.2019): 086306. http://dx.doi.org/10.1088/2053-1591/ab1df0.

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Wang, Wei, Sun Kak Hwang, Kang Lib Kim, Ju Han Lee, Suk Man Cho i Cheolmin Park. "Highly Reliable Top-Gated Thin-Film Transistor Memory with Semiconducting, Tunneling, Charge-Trapping, and Blocking Layers All of Flexible Polymers". ACS Applied Materials & Interfaces 7, nr 20 (15.05.2015): 10957–65. http://dx.doi.org/10.1021/acsami.5b02213.

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Rozprawy doktorskie na temat "Polymer Charge Trapping Memory"

Tao, Qingbo, i 陶庆波. "A study on the dielectrics of charge-trapping flash memory devices". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196488.

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Discrete charge-trapping flash memory is being developed for the next-generation commercial flash-memory applications due to its advantages over the traditional floating-gate counterpart. Currently, Si3N4 is widely used as charge-trapping layer (CTL). However, Si3N4 has low dielectric constant and small conduction-band offset with respect to the SiO2 tunneling layer, imposing limitation on further applications. Therefore, this research emphasized on investigating new dielectrics with appropriate fabrication methods to replace Si3N4 as CTL for achieving improved memory performance. Firstly, GeON CTL annealed at different temperatures was investigated. The memory device with post-deposition annealing at 600 0C exhibited the largest memory window, the best charge retention performance, and the highest reliability. These good results are due to the fact that optimal annealing temperature could suppress shallow traps and also produce new traps with desirable energy levels in the CTL. Since ZnON has a negative conduction-band offset (NCBO) with respect to Si, the traps located in the bandgap of ZnON should have deep energy levels. The memory performances of ZrON film with and without Zn doping were studied. Experimental results showed that ZrZnON film had higher program speed and better charge retention performance due to many deeper trap levels induced by the Zn doping, as well as higher erase speed due to the direct recombination of electrons at these deeper trap levels with incoming holes and the intermediary role of these deeper trap levels under erase mode. MoO3 is another NCBO dielectric with a high K value and many oxygen vacancies. La2O3, a rare-earth metal oxide, is a promising dielectric as CTL. To combine the advantages of both La2O3 and MoO3, Mo-doped La2O3 was proposed as a new CTL. Compared to the device with pure La2O3, the one with LaMoO film as CTL had significantly larger C-V hysteresis window, much higher P/E speeds, and better charge retention due to the deeper-level traps and deeper quantum wells created by the LaMoO film. Nitrogen incorporation is a popular approach to increase the trap density in the bulk of CTL. In this research, the memory performances of GdTiO films with and without nitrogen incorporation were compared. Since the nitrogen incorporation induced smaller equivalent oxide thickness, produced nitride-related traps with desirable energy level and larger cross-section for charge capture, the GdTiON film possessed better memory performance than the GdTiO film. Finally, fluorine plasma was employed to improve the quality of blocking layer. The memory device with AlOF blocking layer obtained higher program speed, better reliability and better charge retention than that based on AlO blocking layer. The improved performance was due to the fact that the fluorine incorporation passivated the defects and removed the excess oxygen in the bulk of the blocking layer. In summary, dielectric plays important roles in the performance of charge-trapping flash memory. Memory devices with GeON, ZrZnON, LaMoO, or GdTiON as charge trapping layer and AlOF as blocking layer can produce large memory window, high program/erase speed and good charge retention.
published_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy

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Huang, Xiaodong, i 黄晓东. "A study on high-k dielectrics for discrete charge-trapping flash memory applications". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hub.hku.hk/bib/B5043438X.

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Discrete charge-trapping flash memories are more promising than their floating-gate counterparts due to their physically discrete-trapping and coupling-free nature. Si3N4 is conventional material as charge-trapping layer (CTL) for charge storage. The shortcomings of Si3N4 are its low dielectric constant and small barrier height at its interface with SiO2 tunneling layer. Therefore, this research aims to investigate new materials as CTL for improving the performance of the memory devices. The charge-trapping characteristics of La2O3 with and without nitrogen incorporation were investigated. Compared with the memory device with La2O3 as CTL, the one with nitrided La2O3 (LaON) showed larger memory window, higher program/erase (P/E) speeds and smaller charge loss, due to the nitrided La2O3 film exhibiting less crystallized structure, higher trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. In order to further improve the performance of the memory device with LaON CTL, a device with band-engineered LaTiON/LaON structure as CTL was also explored, and demonstrated to have better performance than the one with LaON CTL. This was ascribed to the variable tunneling path of charge carriers under P/E and retention modes (realized by the band-engineered charge-trapping layer), high trap density of LaTiON, and large barrier height at the LaTiON/SiO interface. SrTiO 3and BaTiO3 ,both ofwhich are typical perovskite-type dielectrics, also possess distinguished characteristics as CTL, including remarkably high dielectric constant and large conduction-band offset relative to SiO2. The charge-trapping properties of SrTiO3 with and without fluorine incorporation were studied. The device with fluorinated SrTiO3 film showed promising performance in terms of higher P/E speeds at a low gate voltage, better endurance and data retention compared with that without fluorine treatment. These advantages were associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the highest electro-negativity of the fluorine atoms incorporated in the film. The charge-trapping properties of BaTiO3 with and without Zr incorporation were also investigated, where Zr incorporated in BaTiO3 could strengthen the dielectric film and improve its thermodynamic stability. The device with Zr incorporation exhibited similar memory window as the one without Zr incorporation, but higher program speed at low gate voltage, better endurance and data retention, due to the Zr-doped BaTiO3 exhibiting higher charge-trapping efficiency and higher density of traps with deeper energy levels. Besides nitride-based memories, nanocrystal-based memories are another type of charge-trapping memories, where nanocrystals (NCs) embedded into a dielectric are used for charge storage. Memory devices with Ga2O3 NCs as CTL were investigated, which are compatible with the CMOS process. The Ga2O3 NCs displayed higher trap density than the Ga2O3 dielectric film. Moreover, compared with the device with Ga2O 3NCs as CTL, the one with nitrided Ga2O3 NCs showed larger memory window, higher operating speed and better data retention, mainly due to higher charge-trapping efficiency of the nitrided Ga2O3 NCs and nitrogen-induced suppressed formation of interlayer at the Ga2O/SiO interface.
published_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy

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Jakobsson, Fredrik Lars Emil. "Charge transport modulation in organic electronic diodes". Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-14719.

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Since the discovery of conducting polymers three decades ago the field of organic electronics has evolved rapidly. Organic light emitting diodes have already reached the consumer market, while organic solar cells and transistors are rapidly maturing. One of the great benefits with this class of materials is that they can be processed from solution. This enables several very cheap production methods, such as printing and spin coating, and opens up the possibility to use unconventional substrates, such as flexible plastic foils and paper. Another great benefit is the possibility of tailoring the molecules through carefully controlled synthesis, resulting in a multitude of different functionalities. This thesis reports how charge transport can be altered in solid-state organic electronic devices, with specific focus on memory applications. The first six chapters give a brief review of the field of solid-state organic electronics, with focus on electronic properties, resistance switch mechanisms and systems. Paper 1 and 3 treat Rose Bengal switch devices in detail – how to improve these devices for use in cross-point arrays as well as the origin of the switch effect. Paper 2 investigates how the work function of a conducting polymer can be modified to allow for better electron injection into an organic light emitting diode. The aim of the work in papers 4 and 5 is to understand the behavior of switchable charge trap devices based on blends of photochromic molecules and organic semiconductors. With this in mind, charge transport in the presence of traps is investigated in paper 4 and photochromic molecules is investigated using quantum chemical methods in paper 5.
Elektroniska komponenter har traditionellt sett tillverkats av kisel ellerandra liknande inorganiska material. Denna teknologi har förfinats intillperfektion sedan mitten av 1900-talet och idag har kiselkretsar mycket högprestanda. Tillverkningen av dessas kretsar är dock komplicerad och är därförkostsam. Under 1970-talet upptäcktes att organiska polymerer (dvs plast) kanleda ström under vissa förutsättningar. Genom att välja lämplig polymer ochbehandla den med vissa kemikalier (så kallad dopning) kan man varieraledningsförmågan från isolerande till nästintill metallisk. Det öppnarmöjligheten för att skapa elektroniska komponenter där dessa organiskamaterial utgör den aktiva delen istället för kisel. En av de stora fördelarna medorganiska material är att de vanligtvis är lösliga i vanliga lösningsmedel. Det göratt komponenter kan tillverkas mycket enkelt och billigt genom att användakonventionell tryckteknik, där bläcket har ersatts med lösningen av detorganiska materialet. Det gör också att komponenterna kan tillverkas påokonventionella ytor såsom papper, plast eller textil. En annan spännandemöjlighet med organiska material är att dess funktioner kan skräddarsys genomvälkontrollerad kemisk syntes på molekylär nivå. Inom forskningsområdetOrganisk Elektronik studerar man de elektroniska egenskaperna i de organiskamaterialen och hur man kan använda dessa material i elektroniskakomponenter. Vi omges idag av apparater och applikationer som kräver att data sparas,som till exempel digitala kameror, datorer och mobiltelefoner. Eftersom det finnsett stort intresse från konsumenter för nya smarta produkter ökar behovet avmobila lagringsmedia med stor lagringskapacitet i rasande fart. Detta harsporrat en intensiv utveckling av större och billigare fickminnen, hårddiskar ochminneskort. Många olika typer av minneskomponenter baserade på organiskamaterial har föreslagits de senaste åren. I vissa fall har dessa påståtts kunna erbjuda både billigare och större minnen än vad dagens kiselteknologi tillåter.En typ av organiska elektroniska minnen baseras på en reversibel ochkontrollerbar förändring av ledningsförmågan i komponenten. En informationsenhet – en så kallad bit – kan då lagras genom att till exempel koda en högledningsförmåga som en ”1” och en låg ledningsförmåga som en ”0”. Den härdoktorsavhandlingen är ett försök till att öka förståelsen för sådanaminneskomponenter. Minneskomponenter bestående av det organiska materialet Rose Bengalmellan metallelektroder har undersökts. Egenskaper för system bestående avmånga sådana komponenter har beräknats. Vidare visas att minnesfenomenetinte härstammar i det organiska materialet utan i metallelektroderna.Tillsammans med studier av andra forskargrupper har det här resultatetbidragit till en debatt om huruvida minnesmekanismerna i andra typer avkomponenter verkligen beror på det organiska materialet.Olika sätt att ändra transporten av laddningar i organiska elektroniskasystem har undersökts. Det visas experimentellt hur överföringen av laddningarmellan metallelektroder och det organiska materialet kan förbättras genom attmodifiera metallelektroderna på molekylär nivå. Vidare har det studeratsteoretiskt hur laddningar kan fastna (så kallad trapping) i organiska materialoch därmed påverka ledningsförmågan i materialet.En speciell typ av organiska molekyler ändrar sin struktur, och därmedegenskaper, reversibelt när de belyses av ljus av en viss våglängd, så kalladefotokroma molekyler. Denna förändring kan användas till att ändraledningsförmågan genom en komponent och därmed skulle man kunna användamolekylerna i en minneskomponent. I den sista delen av avhandlingen användskvantkemiska metoder för att beräkna egenskaperna hos dessa molekyler för attöka förståelsen för hur de kan användas i minneskomponenter.

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Simon, Daniel. "Multistability, Ionic Doping, and Charge Dynamics in Electrosynthesized Polypyrrole, Polymer-Nanoparticle Blend Nonvolatile Memory, and Fixed p-i-n Junction Polymer Light-Emitting Electrochemical Cells". Doctoral thesis, University of California, Santa Cruz, USA, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-94587.

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A variety of factors make semiconducting polymers a fascinating alternative for both device development and new areas of fundamental research. Among these are solution processability, low cost, flexibility, and the strong dependence of conduction on the presence of charge compensating ions. With the lack of a complete fundamental understanding of the materials, and the growing demand for novel solutions to semiconductor device design, research in the field can take many, often multifaceted, routes. Due to ion-mediated conduction and versatility of fabrication, conducting polymers can provide a route to the study of neural signaling. In the first of three research topics presented, junctions of polypyrrole electropolymerized on microelectrode arrays are demonstrated. Individual junctions, when synthesized in a three-electrode configuration, exhibit current switching behavior analogous to neural weighting. Junctions copolymerized with thiophene exhibit current rectification and the nonlinear current-voltage behavior requisite for complex neural systems. Applications to larger networks, and eventual use in analysis of signaling, are discussed. In the second research topic, nonvolatile resistive memory consisting of gold nanoparticles embedded in a polymer film is examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, and similar transport in the lower-conductivity "off" state. Furthermore, a larger dc capacitance of the on state indicates that a greater amount of filling of midgap trap levels introduced by the nanoparticles increases conductivity, leading to the memory effect. Implications on the question as to whether or not the on state is the result of percolation pathways is discussed. The third and final research topic is a presentation of enhanced efficiency of polymer light-emitting electrochemical cells (LECs) by means of forming a doping self-assembled monolayer (SAM) at the cathode-polymer interface. The addition of the SAM causes a twofold increase in quantum efficiency. Photovoltaic analysis indicates that the SAM increases both open-circuit voltage and short-circuit current. Current versus voltage data are presented which indicate that the SAM does not simply introduce an interfacial dipole layer, but rather provides a fixed doping region, and thus a more stable p-i-n structure.

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Griffo, Michael S. "Charge dynamics in polymer-nanoparticle blends for nonvolatile memory : Surface enhanced fluorescence of a semiconducting polymer; surface plasmon assisted luminescent solar concentrator waveguides /". Diss., Digital Dissertations Database. Restricted to UC campuses, 2009. http://uclibs.org/PID/11984.

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Simon, Daniel Theodore. "Multistability, ionic doping, and charge dynamics in electrosynthesized polypyrrole, polymer-nanoparticle blend nonvolatile memory, and fixed P-I-N junction polymer light-emitting electrochemical cells /". Diss., Digital Dissertations Database. Restricted to UC campuses, 2007. http://uclibs.org/PID/11984.

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Prime, Dominic Charles. "Switching mechanisms, electrical characterisation and fabrication of nanoparticle based non-volatile polymer memory devices". Thesis, De Montfort University, 2010. http://hdl.handle.net/2086/3314.

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Polymer and organic electronic memory devices offer the potential for cheap, simple memories that could compete across the whole spectrum of digital memories, from low cost, low performance applications, up to universal memories capable of replacing all current market leading technologies, such as hard disc drives, random access memories and Flash memories. Polymer memory devices (PMDs) are simple, two terminal metal-insulator-metal (MIM) bistable devices that can exist in two distinct conductivity states, with each state being induced by applying different voltages across the device terminals. Currently there are many unknowns and much ambiguity concerning the working mechanisms behind many of these PMDs, which is impeding their development. This research explores some of these many unanswered questions and presents new experimental data concerning their operation. One prevalent theory for the conductivity change is based on charging and charge trapping of nanoparticles and other species contained in the PMD. The work in this research experimentally shows that gold nanoparticle charging is possible in these devices and in certain cases offers an explanation of the working mechanism. However, experimental evidence presented in this research, shows that in many reported devices the switching mechanism is more likely to be related to electrode effects, or a breakdown mechanism in the polymer layer. Gold nanoparticle charging via electrostatic force microscopy (EFM) was demonstrated, using a novel device structure involving depositing gold nanoparticles between lateral electrodes. This allowed the gold nanoparticles themselves to be imaged, rather than the nanoparticle loaded insulating films, which have previously been investigated. This method offers the advantages of being able to see the charging effects of nanoparticles without any influence from the insulating matrix and also allows charging voltages to be applied via the electrodes, permitting EFM images to capture the charging information in near real-time. Device characteristics of gold nanoparticle based PMDs are presented, and assessed for use under different scenarios. Configurations of memory devices based on metal-insulator-semiconductor (MIS) structures have also been demonstrated. Simple interface circuitry is presented which is capable of performing read, write and erase functions to multiple memory cells on a substrate. Electrical properties of polystyrene thin films in the nanometre thickness range are reported for the first time, with insulator trapped charges found to be present in comparable levels to those in silicon dioxide insulating films. The dielectric breakdown strength of the films was found to be significantly higher than bulk material testing would suggest, with a maximum dielectric strength of 4.7 MV•cm-1 found, compared with the manufacturers bulk value of 0.2 – 0.8 MV•cm-1. Conduction mechanisms in polystyrene were investigated with the dominant conduction mechanism found to be Schottky emission.

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Gebel, Thoralf. "Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties". Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449.

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The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.

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Gebel, Thoralf. "Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties". Forschungszentrum Rossendorf, 2002. https://hzdr.qucosa.de/id/qucosa%3A21773.

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Goh, Roland Ghim Siong. "Carbon nanotubes for organic electronics". Thesis, Queensland University of Technology, 2008. https://eprints.qut.edu.au/20849/1/Roland_Goh_Thesis.pdf.

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This thesis investigated the use of carbon nanotubes as active components in solution processible organic semiconductor devices. We investigated the use of functionalized carbon nanotubes in carbon nanotubes network transistors (CNNFET) and in photoactive composites with conjugated polymers. For CNNFETs, the objective was to obtain detailed understanding of the dependence of transistor characteristics on nanotubes bundle sizes, device geometry and processing. Single walled carbon nanotubes were functionalized by grafting octadecylamine chains onto the tubes, which rendered them dispersible in organic solvents for solution processing. To investigate the dependence of electronic properties of carbon nanotubes networks on bundle size, we developed a centrifugal fractionation protocol that enabled us to obtain nanotube bundles of different diameters. The electronic properties of networks of nanotube bundles deposited from solution were investigated within a CNNFET device configuration. By comparing devices with different degree of bundling we elucidated the dependence of key device parameters (field effect mobility and on/off ratio) on bundle sizes. We further found that, in contrast to traditional inorganic transistors, the electronic properties of the CNNFETs were dominated by the channel rather than contact resistance. Specifically, the apparent mobility of our devices increased with decreasing channel length, suggesting that the charge transport properties of CNNFETs are bulk rather than contacts dominated. This meant that charge traps in the channel of the device had a significant effect on transport properties. We found that charge traps in the channel region introduced by adsorbed oxygen and silanol groups on the SiO2 surface were responsible for the dominant p-type conductance in as-fabricated devices. Based on this understanding, we demonstrated the p-type to n-type conversion of the transistor characteristics of CNNFETs by depositing nanotubes on electron-trapfree dielectric surfaces. Finally, by combining annealing and surface treatment, we fabricated CNNFETs with high n-type mobility of 6cm2/V.s. For polymer composites, the objective was to obtain detailed understanding of the interactions between carbon nanotubes and the conjugated polymer; a prerequisite for using these composites in organic electronic devices. We fabricated well dispersed nanotube/polymer composites by using functionalized carbon nanotubes and studied the effect of nanotubes addition on the photophysical properties of the technologically important conjugated polymer poly(3-hexylthiophene) (P3HT). Measurement of the photoluminescence efficiency of nanotubes/polymer composites showed that addition of 10wt% carbon nanotubes effectively quenched the polymer emission indicating close electronic interactions. This indicated that nanotubes/polymer composites have potential in organic photovoltaic or light-sensing devices. Further analysis of the steady-state photoluminescence spectra revealed that nanotube addition resulted in increased structural disorder in the polymer. The incorporation of structural disorder into the polymer with the addition of even a small amount of carbon nanotubes may be detrimental to charge transport. UV-vis adsorption studies revealed that one-dimensional templating of P3HT chains by nanotubes resulted in a red-shifted feature in the solutionstate optical adsorption spectra of P3HT. This suggested that presence of nanotube surface templates the polymer self-organisation to produce highly ordered coating of P3HT chains around the nanotube. In order to elucidate the nanoscale origin of this phenomenon, we performed detailed STM studies on individual nanotubes adsorbed with P3HT chains. Since carbon nanotubes can be considered as rolled up sheets of graphite, we also performed STM on P3HT chains assembly on graphite for comparison. For P3HT assembly on HOPG, we found that while 2D crystals were observed when P3HT was cast onto HOPG from dilute solution, a thicker and more disordered film resulted when cast from concentrated solutions and subsequent layers were more likely to align normal to an underlying monolayer of P3HT on the HOPG surface. STM studies of nanotube/polymer mixtures revealed that the P3HT chains are adsorbed on nanotubes surface in such a way that the thiophene and hexyl moieties of the polymer associated with the nanotube surface in identical manner to P3HT monolayer depositions on graphite. This resulted in the increased order as inferred from adsorption UV-Vis spectroscopy, where the polymer chains, which are otherwise prone to chain kinks and twists in solution, adopt a planar configuration when adsorbed onto the nanotube surface.

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Książki na temat "Polymer Charge Trapping Memory"

Nanomaterials-Based Charge Trapping Memory Devices. Elsevier, 2020. http://dx.doi.org/10.1016/c2018-0-05519-x.

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Nayfeh, Ammar, i Nazek El-Atab. Nanomaterials-Based Charge Trapping Memory Devices. Elsevier, 2020.

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Nayfeh, Ammar, i Nazek El-Atab. Nanomaterials-Based Charge Trapping Memory Devices. Elsevier, 2020.

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Części książek na temat "Polymer Charge Trapping Memory"

Saranti, Konstantina, i Shashi Paul. "Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices". W Charge-Trapping Non-Volatile Memories, 55–89. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48705-2_2.

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Fakher, S., A. Sleiman, A. Ayesh, A. AL-Ghaferi, M. C. Petty, D. Zeze i Mohammed Mabrook. "Organic Floating Gate Memory Structures". W Charge-Trapping Non-Volatile Memories, 123–56. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48705-2_4.

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Nayfeh, Ammar, i Nazek El-Atab. "Overview of charge trapping memory devices—charge trapping layer engineering". W Nanomaterials-Based Charge Trapping Memory Devices, 45–66. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00003-1.

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Nayfeh, Ammar, i Nazek El-Atab. "Basics of memory devices". W Nanomaterials-Based Charge Trapping Memory Devices, 1–22. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00001-8.

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Nayfeh, Ammar, i Nazek El-Atab. "Scalability of nano-island based memory devices". W Nanomaterials-Based Charge Trapping Memory Devices, 155–74. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00007-9.

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Nayfeh, Ammar, i Nazek El-Atab. "Overview of charge trapping memory devices—Tunnel band engineering". W Nanomaterials-Based Charge Trapping Memory Devices, 23–44. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00002-x.

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Nayfeh, Ammar, i Nazek El-Atab. "Atomic layer deposition based nano-island growth". W Nanomaterials-Based Charge Trapping Memory Devices, 67–106. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00004-3.

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Nayfeh, Ammar, i Nazek El-Atab. "Laser ablated nanoparticles synthesis". W Nanomaterials-Based Charge Trapping Memory Devices, 107–31. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00005-5.

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Nayfeh, Ammar, i Nazek El-Atab. "Agglomeration-based nanoparticle fabrication". W Nanomaterials-Based Charge Trapping Memory Devices, 133–53. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00006-7.

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"Front matter". W Nanomaterials-Based Charge Trapping Memory Devices, iii. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-822342-0.00008-0.

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Streszczenia konferencji na temat "Polymer Charge Trapping Memory"

Bory, Benjamin F., Paulo Rocha, Henrique L. Gomes, Dago M. de Leeuw i Stefan C. J. Meskers. "Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes". W SPIE Organic Photonics + Electronics, redaktor Emil J. W. List Kratochvil. SPIE, 2015. http://dx.doi.org/10.1117/12.2186577.

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Campbell, Alasdair J., Michael S. Weaver, Donal D. C. Bradley i David G. Lidzey. "Charge trapping in polymer electroluminescent devices". W Optical Science, Engineering and Instrumentation '97, redaktor Zakya H. Kafafi. SPIE, 1997. http://dx.doi.org/10.1117/12.279320.

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Tsukamoto, T., K. Matsumoto, A. Hirao i H. Nishizawa. "Charge carrier trapping in the photorefractive polymer". W Photorefractive Effects, Materials, and Devices. Washington, D.C.: OSA, 2001. http://dx.doi.org/10.1364/pemd.2001.391.

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Chin, Albert, C. Y. Tsai i Hong Wang. "High performance charge-trapping flash memory with highly-scaled trapping layer". W 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS). IEEE, 2011. http://dx.doi.org/10.1109/nvmts.2011.6137106.

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Beug, M. F., T. Melde, M. Isler, L. Bach, M. Ackermann, S. Riedel, K. Knobloch i C. Ludwig. "Anomalous Erase Behavior in Charge Trapping Memory Cells". W 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design. IEEE, 2008. http://dx.doi.org/10.1109/nvsmw.2008.42.

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Song, Y. C., X. Y. Liu, K. Zhao, J. F. Kang, R. Q. Hant, Z. L. Xia, D. Kim i K.-H. Lee. "Local accumulated free carriers in charge trapping memory". W 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418392.

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Liu, X. Y., Y. C. Song, Gang Du, R. Q. Han, Z. L. Xia, D. Kim i K. H. Lee. "Simulation of charge trapping memory with novel structures". W 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734582.

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Rizk, Ayman, Feyza B. Oruc, Ali K. Okyay i Ammar Nayfeh. "ZnO based charge trapping memory with embedded nanoparticles". W 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2012. http://dx.doi.org/10.1109/nano.2012.6322033.

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Lun, Zhiyuan, Taihuan Wang, Lang Zeng, Kai Zhao, Xiaoyan Liu, Yi Wang, Jinfeng Kang i Gang Du. "Simulation on endurance characteristic of charge trapping memory". W 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2013. http://dx.doi.org/10.1109/sispad.2013.6650632.

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Peng, Y., F. Liu, X. Liu, G. Du i J. Kang. "Improved Memory Characteristics of A Novel TATHOS-Structured Charge Trapping Memory". W 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-4-4.

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