Gotowa bibliografia na temat „Poly-Si”
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Artykuły w czasopismach na temat "Poly-Si"
Geng, X. H., J. M. Xue, H. C. Ge, H. B. Li, Z. P. Wang, Q. Z. Wang i H. Z. Ren. "Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells". Solar Energy Materials and Solar Cells 75, nr 3-4 (luty 2003): 489–95. http://dx.doi.org/10.1016/s0927-0248(02)00200-3.
Pełny tekst źródłaChao, T. S., C. L. Lee i T. F. Lei. "Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer". Electronics Letters 29, nr 13 (1993): 1157. http://dx.doi.org/10.1049/el:19930774.
Pełny tekst źródłaChao, T. S., C. L. Lee, T. F. Lei i Y. T. Yen. "Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement". Electronics Letters 28, nr 12 (1992): 1144. http://dx.doi.org/10.1049/el:19920722.
Pełny tekst źródłaKee-Chan Park, Kwon-Young Choi, Juhn-Suk Yoo i Min-Koo Han. "A new poly-Si thin-film transistor with poly-Si/a-Si double active layer". IEEE Electron Device Letters 21, nr 10 (październik 2000): 488–90. http://dx.doi.org/10.1109/55.870610.
Pełny tekst źródłaMin, Byung-Hyuk, Cheol-Min Park, Juhn-Suk Yoo i Min-Koo Han. "A new poly-Si TFT to improve surface roughness at poly-oxide/poly-Si interface". Physica Scripta T69 (1.01.1997): 229–32. http://dx.doi.org/10.1088/0031-8949/1997/t69/047.
Pełny tekst źródłaMaksimov, S. K. "HREM investigations of Si/SiO2/poly-si compositions". Proceedings, annual meeting, Electron Microscopy Society of America 48, nr 4 (sierpień 1990): 580–81. http://dx.doi.org/10.1017/s0424820100176034.
Pełny tekst źródłaBoehringer, M., J. E. Pillion, V. Erdmann, M. Rygula, K. Winz, P. Brauchle, D. Aquino i in. "Effect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si Capacitors". Solid State Phenomena 76-77 (styczeń 2001): 279–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.279.
Pełny tekst źródłaChang, C. Y., Y. D. Wang, F. C. Tzeng, C. T. Chen i S. J. Wang. "An isolated Al-poly Si-(p)Si-(n+)Si switching device". Solid-State Electronics 29, nr 7 (lipiec 1986): 735–37. http://dx.doi.org/10.1016/0038-1101(86)90159-0.
Pełny tekst źródłaLin, Horng-Chih. "Poly-Si Nanowire Device Technology". Nanoscience &Nanotechnology-Asia 1, nr 2 (1.12.2011): 109–22. http://dx.doi.org/10.2174/2210681211101020109.
Pełny tekst źródłaLin, Horng-Chih. "Poly-Si Nanowire Device Technology". Nanoscience & Nanotechnology-Asiae 1, nr 2 (1.12.2011): 109–22. http://dx.doi.org/10.2174/2210682011101020109.
Pełny tekst źródłaRozprawy doktorskie na temat "Poly-Si"
Salman, Fatma. "EXPERIMENTAL STUDY OF PROFILES OF IMPLANTED SPECIES INTO SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY". Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3056.
Pełny tekst źródłaPh.D.
Department of Physics
Sciences
Physics PhD
Steffens, Jonathan [Verfasser]. "Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiOx Passivating Contacts / Jonathan Steffens". Konstanz : KOPS Universität Konstanz, 2020. http://d-nb.info/122106259X/34.
Pełny tekst źródłaUllah, Syed Shihab. "Solution Processing Electronics Using Si6 H12 Inks: Poly-Si TFTs and Co-Si MOS Capacitors". Thesis, North Dakota State University, 2011. https://hdl.handle.net/10365/28902.
Pełny tekst źródłaXiong, Zhibin. "Novel scaled-down poly-Si thin-film transistor devices and technologies /". View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20XIONG.
Pełny tekst źródłaXu, Guo-Yuan, i 許國原. "Poly-oxide, niteridized poly-oxide, amorphous-oxide grown on poly-Si and amorphous-Si-characterization and modelings". Thesis, 1986. http://ndltd.ncl.edu.tw/handle/22052767226291035676.
Pełny tekst źródłaHuang, Chen-Shuo, i 黃震鑠. "A Study of Poly-Si EEPROM". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/69476004541115860739.
Pełny tekst źródła國立清華大學
電子工程研究所
93
With the suggestion of SoP to reduce cost and create additional value, the memory which is fabricated on glass substrate is essential for peripheral driver ICs application. We have found and studied a simple twins poly-Si TFTs EEPROM’s to suit the low temperature and simple process on glass substrate. First, we actually fabricated the simple twins poly-Si TFTs EEPROM’s and examined the feasibility of it. We successfully made it and that has good memory characteristic. The memory also exhibited that higher area ratio in coupling cell results in bigger on-current of devices and the better programming/erasing efficiency, the results of experiment were agreed with previous report. And than we present a concept of enhancing this memory cell performance by increasing the overlap of the source/drain and gate in coupling cell and realize it. In addition, the influence of different S/D dopant type in active cell was investigated, the N-type S/D dopant have batter memory efficiency than P-type S/D dopant.
Tsao, Kai-Yang, i 曹凱揚. "High Strength Si(111) Substrate with Poly-Si/α-Si Sealing Nanotexture for GaN". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x7thcw.
Pełny tekst źródłaChen, Y. C., i 陳盈佳. "Excimer Laser Crystallization of Si Film for Poly-Si TFT Device". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/10160203242103772068.
Pełny tekst źródła國立交通大學
材料科學與工程系
90
In this study, the crystallization of a-Si with semi-Gaussian excimer laser was investigated. After the single-shot excimer laser process, the poly-Si region showed grains with a wide range of sizes corresponding to the Gaussian distributed laser energy. From the view of laser energy, three crystallization regimes were found on the ELA a-Si films: (1) partial-melting, (2) near-complete-melting and (3) complete-melting regimes. Large super-lateral-grain-growth (SLG) grains were observed in the near-complete-melting regime. The grain size of poly-Si film using multiple shot laser annealing was constrained by the Gaussein distributed laser energy. The large grains were suppressed due to the small grains formed in the first shot. In addition, the influence of substrate temperature on the properties of polysilicon films prepared by excimer laser annealing was studied. As the substrate temperature was elevated, the maximum crystallinity and grain size increased, while the laser energy needed to obtain the maximum crystallinity of polysilicon films decreased. The elevated substrate temperature also changed the surface roughness of polysilicon films. In the partially melting regime, the surface roughness increased with laser energy and substrate temperature. The surface roughness dropped pronouncedly before reaching the super-lateral-grain-growth regime. Further increasing energy to homogeneous nucleation regime did not change much of the surface roughness. Furthermore, the influence of laser energy on the properties of excimer-laser-annealed (ELA) amorphous silicon (a-Si) and as-deposited polycrystalline silicon (poly-Si) films has been studied too. For the ELA poly-Si films, in the low energy region, the crystallinity decreased with the energy. After reaching the minimum, it increased to the maximum, and then dropped down. No SLG grains were found in the near-complete-melting regime. The largest grains were observed in the partial-melting regime. The largest grain size (100 nm) of ELA poly-Si was less than that of ELA a-Si (130 nm). Finally, the effects of energy on the microstructure of amorphous silicon (a-Si) films annealed by two-step laser process were systematically investigated. For the low-crystallinity / small-grain films, which were formed after the first low-energy laser crystallization, the grain size decreased and then increased with the energy of second laser annealing. In contrast, for the high-crystallinity films, i.e. SLG-grain films, the grain size monotonously decreased with second laser energy increased. Two-step laser annealed poly-Si films revealed that fine grains were formed and extruded at the grain boundary after the second high-energy laser annealing. High performance poly-Si TFTs can be fabricated from the poly-Si films crystallized by low-energy annealing followed by second high-energy laser annealing. When the results were compared, the poly-Si TFT using the poly-Si film crystallized by single high-energy laser annealing showed poorer mobility and subthreshold swing.
羅傑. "Hybrid Logic/Resistive-switching Poly-Si Thin". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/64642943623743268165.
Pełny tekst źródła國立交通大學
電子研究所
100
A hybrid device combined a resistive switching (RS) memory and a logic transistor is proposed in this thesis. The hafnium oxide (HfO2) is not only the high-κ gate dielectric of the transistor but also the resistive switching layer of the RRAM, and the nickel metal gate also acts like a top electrode in a traditional MIM or MIS which is the most common structure in the previous RRAM paper . We first demonstrated a one-bit RS operation by applying a swept voltage on either the gate or drain to trigger the RS. A large amount of VT shift after the RS operation was found when we applied voltage on the gate. On the other hand, the VT shift is negligible when we swept the drain voltage with source grounded during the set/reset process. With the help of the constant voltage stress experiment, we realized that the reason caused the considerable VT shift after resistive switching operation was the charge trapping and wearout attributed to the high voltage applied during the set/reset process, which might induce F-N tunneling. iii Finally, we realized a two-bit-per cell operation mode in our structure with almost negligible VT shift after RS for the first time, which indicated that a new type of high-density memory using the resistive switching mechanism in a traditional transistor structure is possible.
Fang, Wei-nan, i 方偉南. "2-stage Hydrogenation of Poly-Si TFTs". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/89456485798733398689.
Pełny tekst źródła大同大學
光電工程研究所
98
In this research, a parallel-plate plasma reactor(PECVD) is used to hydrogenate polysilicon thin-film transistors(TFT’s). And we find that the H+ and H have different diffusing length at different substrate temperature. Hence, we propose a new theory named 『2-stage hydrogenation』and success to improve the poly-Si TFT’s by 『2-stage hydrogenation』.Vth has decreased 42%﹐SS has reduced 17.5%, mobility has increased 27%, and Ids on/off ratio has induced 38%.
Części książek na temat "Poly-Si"
Brotherton, S. D. "Poly-Si TFT Performance". W Introduction to Thin Film Transistors, 253–300. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_8.
Pełny tekst źródłaIshihara, Ryoichi. "Poly-Si TFT Structures". W Thin Film Transistors, 670–700. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_15.
Pełny tekst źródłaChoi, Byong-Deok, Inhwan Lee i Oh-Kyong Kwon. "Poly-Si TFT Drivers". W Thin Film Transistors, 885–949. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_22.
Pełny tekst źródłaBrotherton, S. D. "Poly-Si TFT Technology and Architecture". W Introduction to Thin Film Transistors, 185–251. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_7.
Pełny tekst źródłaUchikoga, Shuichi. "Doping Techniques for Poly-Si TFTs". W Thin Film Transistors, 818–30. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_19.
Pełny tekst źródłaUchikoga, Shuichi. "Gate Insulators for Poly-Si TFTs". W Thin Film Transistors, 832–47. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_20.
Pełny tekst źródłaBonnaud, Olivier, Tayeb Mohammed-Brahim i Dieter G. Ast. "Poly-Si Thin Film and Substrate Materials". W Thin Film Transistors, 533–618. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_13.
Pełny tekst źródłaSameshima, Toshiyuki. "Poly-Si TFTs by Laser Crystallization Methods". W Thin Film Transistors, 701–44. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_16.
Pełny tekst źródłaJang, Jin. "Poly-Si TFTs by Direct Deposition Methods". W Thin Film Transistors, 799–816. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_18.
Pełny tekst źródłaKuo, Yue. "Poly-Si TFT for non-LCD Applications". W Thin Film Transistors, 989–1021. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_24.
Pełny tekst źródłaStreszczenia konferencji na temat "Poly-Si"
Hamada, K., S. Saito, K. Sera, F. Okumura, F. Uesugi i I. Nishiyama. "Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO2/Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si". W 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.a-3-1.
Pełny tekst źródłaKaneko, A., S. Inumiya, K. Sekine, M. Sato, Y. Kamimuta, K. Eguchi i Y. Tsunashima. "Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si/HfSiO/SiO2/Si". W 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.c-2-1.
Pełny tekst źródłaTung-Ming Pan, Chih-Jen Chang, Ching-Lin Chan, Sheng-Han Su i Wu-Ching Lin. "CF4 plasma treated poly-Si film by PECVD for high-k PrTiO3 poly-Si TFTs". W 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378022.
Pełny tekst źródłaHara, A., K. Kondo i T. Sato. "Monolithic Integration of Ni-SPC Poly-Si TFTs and Lateral Large-grained Poly-Si TFTs". W 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.p-9-11.
Pełny tekst źródłaFeldmann, Frank, Christian Reichel, Ralph Muller i Martin Hermle. "Si solar cells with top/rear poly-Si contacts". W 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7750076.
Pełny tekst źródłaSyu, Hong-Jhang, Shu-Chia Shiu i Ching-Fuh Lin. "Si/silicon nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) heterojunction solar cells". W SPIE Solar Energy + Technology, redaktor Loucas Tsakalakos. SPIE, 2011. http://dx.doi.org/10.1117/12.893353.
Pełny tekst źródłaJOHANSEN, JARLE ANDRE, HALLVAR FIGENSCHAU, XUYUAN CHEN, ARTHUR VAN RHEENEN i CORA SALM. "LOW FREQUENCY NOISE IN POLY-SI- AND POLY-SIGE-GATED MOSFETS". W Proceedings of the 16th International Conference. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811165_0036.
Pełny tekst źródłaIto, Kazumasa, J. Togawa, T. Yonezaki, M. Hashimoto, Michio Ishikawa i Y. Ota. "Low-temperature poly-Si TFT mass production system: CMD-450 poly". W Electronic Imaging '97, redaktorzy Tolis Voutsas i Tsu-Jae King. SPIE, 1997. http://dx.doi.org/10.1117/12.270296.
Pełny tekst źródłaSantbergen, Rudi, Guangtao Yang, Paul Procel, Gianluca Limodio, Arthur Weeber, Olindo Isabella i Miro Zeman. "Optical Analysis of Poly-Si and Poly-SiOx Carrier-Selective Passivating Contacts for c-Si Solar Cells". W Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/pv.2017.pw3a.5.
Pełny tekst źródłaHayashi, T., Y. Nishida, S. Sakashita, M. Mizutani, S. Yamanari, M. Higashi, T. Kawahara i in. "Cost Worthy and High Performance LSTP CMIS; Poly-Si/HfSiON nMIS and Poly-Si/TiN/HfSiON pMIS". W 2006 International Electron Devices Meeting. IEEE, 2006. http://dx.doi.org/10.1109/iedm.2006.347009.
Pełny tekst źródłaRaporty organizacyjne na temat "Poly-Si"
Atwater, H. A. Low-Temperature, High Throughput Process for Thin, Large-Grained Poly Si: Final Technical Report, 24 May 1999--25 July 2003. Office of Scientific and Technical Information (OSTI), wrzesień 2003. http://dx.doi.org/10.2172/15004719.
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