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Artykuły w czasopismach na temat "Polarization photodetectors"
Grahn, Holger T. "Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors". MRS Bulletin 34, nr 5 (maj 2009): 341–47. http://dx.doi.org/10.1557/mrs2009.97.
Pełny tekst źródłaDas, K., S. Mukherjee, S. Manna, S. K. Ray i A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity". Nanoscale 6, nr 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.
Pełny tekst źródłaHou, Yaonan, Menno Kappers, Chaoyuan Jin i Rachel Oliver. "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN". Applied Physics Letters 120, nr 20 (16.05.2022): 202101. http://dx.doi.org/10.1063/5.0094454.
Pełny tekst źródłaLi, Jinzhao, Junyu Li, Shudao Zhou i Fei Yi. "Metasurface Photodetectors". Micromachines 12, nr 12 (20.12.2021): 1584. http://dx.doi.org/10.3390/mi12121584.
Pełny tekst źródłaZheng, Dingshan, Hailu Wang, Ruoling Chen, Long Li, Jiaxiang Guo, Yue Gu, Muhammad M. Zubair i in. "High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field". Nanophotonics 10, nr 18 (3.11.2021): 4637–44. http://dx.doi.org/10.1515/nanoph-2021-0480.
Pełny tekst źródłaWang, Xingang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu i Zhongming Wei. "Polarization sensitive photodetector based on quasi-1D ZrSe3". Journal of Semiconductors 43, nr 10 (1.10.2022): 102001. http://dx.doi.org/10.1088/1674-4926/43/10/102001.
Pełny tekst źródłaJestl, M., A. Köck, W. Beinstingl i E. Gornik. "Polarization- and wavelength-selective photodetectors". Journal of the Optical Society of America A 5, nr 9 (1.09.1988): 1581. http://dx.doi.org/10.1364/josaa.5.001581.
Pełny tekst źródłaHainey, Mel F., Takaaki Mano, Takeshi Kasaya, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto i in. "Systematic studies for improving device performance of quantum well infrared stripe photodetectors". Nanophotonics 9, nr 10 (4.07.2020): 3373–84. http://dx.doi.org/10.1515/nanoph-2020-0095.
Pełny tekst źródłaGao, Xing, Xin Song, Shan Zhang, Xinxiang Yang, Pei Han, Liwen Zhang, Chunxiao Lu, Xihong Hao i Yong Li. "A Self-Powered Broadband Photodetector with High Photocurrent Based on Ferroelectric Thin Film Using Energy Band Structure Design". Crystals 14, nr 1 (13.01.2024): 79. http://dx.doi.org/10.3390/cryst14010079.
Pełny tekst źródłaLuo, Ming‐Cheng, Fang‐Fang Ren, Nikita Gagrani, Kai Qiu, Qianjin Wang, Le Yu, Jiandong Ye i in. "Polarization‐Independent Indium Phosphide Nanowire Photodetectors". Advanced Optical Materials 8, nr 17 (8.06.2020): 2000514. http://dx.doi.org/10.1002/adom.202000514.
Pełny tekst źródłaRozprawy doktorskie na temat "Polarization photodetectors"
Ahmed, Rizwan, i Shahid Abbas. "Electrical and Optical Characteristics of InP Nanowires based p-i-n Photodetectors". Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-13915.
Pełny tekst źródłaŠevčík, Michal. "Nanometrologická vibrometrie". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220217.
Pełny tekst źródłaZhou, Ziqi. "Optical and Electrical Properties of Two-Dimensional Materials". Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0141.
Pełny tekst źródłaTwo-dimensional (2D) semiconductor materials exhibit overwhelming electrical, optical, magnetic, thermal and other advantages, which enables their great potential applications in ultra-thin, transparent and highly integrated optoelectronic devices. Searching new two-dimensional materials and exploring their optimal performance, as well as expanding the practical application of two-dimensional materials have been the cores of the researches of two-dimensional materials. This thesis focuses on the vertical magnetic control of the CoFeB film on a large-area single-layer MoS₂ film, which could expand the potential of two-dimensional materials in spin optical detectors, the Polarized Photodetection (anisotropy) based on noval two-dimensional semiconductor GeAs, and the optical characterizations of group IV-VI compounds like SnS and ZnSnS alloys. This paper introduces them in detail through the following three parts: 1. We research the fabrication of the Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropies (PMA) on the full coverage MoS₂ monolayers. By optimizing the thickness of the CoFeB layer and the annealing temperature, a large perpendicular interface anisotropy energy of 0.975 mJ/m² has been obtained at the CoFeB/MgO interface. By analyzing the structural and the chemical properties of the heterostructure, it is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively block the diffusion of the FM atoms into the 2D material, and that the Ta layer plays a critical role to efficiently absorb B atoms from the CoFeB layer to establish the PMA. From the results of ab initio calculations, the MgO thickness can be tuned to modify the MoS₂ band structure, from an indirect bandgap with 7 MLs MgO layers to a direct bandgap with 3 MLs MgO layers. The proximity effect induced by Fe results in a splitting of 10 meV in the valence band at the Γ point of the 3MLs MgO structure while it is negligible for the 7MLs MgO structure. 2. we research the anisotropic optical characterization of a group IV-V compound, Germanium Arsenic (GeAs), with anisotropic monoclinic structure. The in-plane anisotropic optical nature of GeAs crystal is further investigated by the polarization-resolved absorption spectroscopy (400-2000 nm) and the polarization-sensitive photodetectors. In the visible-to-near-infrared range, the 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with an angle of 75~80 degrees on both of the linear dichroism and the polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax/Ipmin ~ 1.49 at 520 nm and Ipmax/Ipmin ~ 4.4 at 830 nm are measured by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes at the electrode/GeAs interface. 3. We research optical characterizations of group-IV-VI compounds like SnS and ZnSnS alloys. SnS nanosheets exhibit carrier mobility of 37.75 cm²·V⁻¹·s⁻¹, photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56×104% at 450 nm. Optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm. Due to the anisotropic optical absorption, the polarized photocurrent appears upon the periodic change affected by the polarized direction of the incident light at 808 nm. The ZnSnS alloys combine the advantageous optical parameters of SnS and ZnS₂, which belong to the direct band structure of n-type 2D semiconductors. The carrier mobility of the alloy is 65 cm² V⁻¹ S⁻¹ and the on/off ratio under white-LED illumination is as high as 51
Park, Hyunsung. "Vertical Silicon Nanowires for Image Sensor Applications". Thesis, Harvard University, 2014. http://nrs.harvard.edu/urn-3:HUL.InstRepos:13065028.
Pełny tekst źródłaEngineering and Applied Sciences
Bučko, Kristián. "Měření vlastností polarizovaného světla na výstupu vlnového multiplexu a jeho optimalizace pro použití v senzorové technice". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442381.
Pełny tekst źródłaCzęści książek na temat "Polarization photodetectors"
Youn, Sun-Hyun. "Measurement of the Polarization State of a Weak Signal Field by Homodyne Detection". W Photodetectors. InTech, 2012. http://dx.doi.org/10.5772/36403.
Pełny tekst źródłaAndo, Kazuya, i Eiji Saitoh. "Spin Photodetector: Conversion of Light Polarization Information into Electric Voltage Using Inverse Spin Hall Effect". W Photodetectors. InTech, 2012. http://dx.doi.org/10.5772/35473.
Pełny tekst źródłaMu, Haoran, Jian Yuan i Shenghuang Lin. "Two-Dimensional Group-10 Noble-Transition-Metal Dichalcogenides Photodetector". W Photodetectors [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95883.
Pełny tekst źródłaBasu, Prasanta Kumar, Bratati Mukhopadhyay i Rikmantra Basu. "Nanowires". W Semiconductor Nanophotonics, 226–53. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.003.0008.
Pełny tekst źródłaAwad, Ehab. "Infrared Nano-Focusing by a Novel Plasmonic Bundt Optenna". W Plasmonics [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.104695.
Pełny tekst źródłaSarid, Dror. "Heterodyne Detection System". W Scanning Force Microscopy, 91–100. Oxford University PressNew York, NY, 1994. http://dx.doi.org/10.1093/oso/9780195092042.003.0007.
Pełny tekst źródłaStreszczenia konferencji na temat "Polarization photodetectors"
Komatsu, Kento, Shota Ishimura, Chun Ren, Go Soma, Hidenori Takahashi, Takehiro Tsuritani, Masatoshi Suzuki, Yoshiaki Nakano i Takuo Tanemura. "Metasurface-based Coherent Receiver Insensitive to LO Polarization". W Optical Fiber Communication Conference. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/ofc.2024.th4b.2.
Pełny tekst źródłaOnat, Bora M., Goekhan Ulu i M. Selim Unlu. "Compact polarization sensors with vertically integrated photodetectors". W Optoelectronics and High-Power Lasers & Applications, redaktorzy Shih-Yuan Wang i Yoon-Soo Park. SPIE, 1997. http://dx.doi.org/10.1117/12.298262.
Pełny tekst źródłaFerreras, A., O. Antón, F. Rodriguez, E. Gdmez-Salas, J. L. de Miguel i F. Hemdndez-Gil. "WAVEGUIDE PHOTODETECTORS FOR POLARIZATION DIVERSITY COHERENT RECEIVERS". W Integrated Photonics Research. Washington, D.C.: OSA, 1994. http://dx.doi.org/10.1364/ipr.1994.thc5.
Pełny tekst źródłaZhou, Jing, Zeshi Chu, Fangzhe Li, Tianyun Zhu, Xiaoshuang Chen i Wei Lu. "Metamaterial integrated circular polarization quantum well infrared photodetectors". W 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. http://dx.doi.org/10.1109/irmmw-thz50926.2021.9566895.
Pełny tekst źródłaPark, Hyunsung, i Kenneth B. Crozier. "Polarization-resolved Imaging using Elliptical Silicon Nanowire Photodetectors". W CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sth4i.5.
Pełny tekst źródłaBoerma, Hendrik, Marko Perestjuk, Alexander Schindler, Shahram Keyvaninia, Patrick Runge i Martin Schell. "Inverse-Designed Polarization Rotator-Splitter Monolithically Integrated with 75 GHz Photodetectors on InP". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/iprsn.2023.im3c.3.
Pełny tekst źródłaGebhard, T., P. L. Souza, F. F. Schrey, G. Strasser, K. Unterrainer, M. P. Pires, S. M. Landi, J. M. Villas-Boas i N. Studart. "Polarization Dependence of Photocurrent in Quantum-Dot Infrared Photodetectors". W PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729956.
Pełny tekst źródłaHierro, A., G. Tabares, M. Lopez-Ponce, E. Muñoz, A. Kurtz, B. Vinter i J. M. Chauveau. "ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors". W SPIE OPTO, redaktorzy Ferechteh H. Teherani, David C. Look i David J. Rogers. SPIE, 2015. http://dx.doi.org/10.1117/12.2179728.
Pełny tekst źródłaTrushkina, Anna V., Victoria A. Ryzhova, Victor M. Denisov i Valery V. Korotaev. "Distribution of polarization sensitivity on the arbitrarily oriented matrix photodetectors". W SPIE Photonics Europe, redaktorzy Francis Berghmans i Anna G. Mignani. SPIE, 2016. http://dx.doi.org/10.1117/12.2227827.
Pełny tekst źródłaCampbell, David K., i David K. Towner. "A Magneto-optic Polarization Readout Model". W Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/ods.1985.tubb2.
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