Gotowe bibliografie tematyczne / Plasma Chemistry - SiH4

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Gotowa bibliografia na temat „Plasma Chemistry - SiH4”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Plasma Chemistry - SiH4"

Orlicki, Dariusz, Vladimir Hlavacek i Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor". Journal of Materials Research 7, nr 8 (sierpień 1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.

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PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and the numerical results show that the deposition rate is lower for the Druyvesteyn distribution. The plasma chemistry model includes silane, silyl, silylene, disilane, hydrogen, and atomic hydrogen. The sensitivity of the deposition rate toward the branching ratios SiH3 and SiH2 as well as H2 and H during silyl dissociation is examined. Further parameters that are considered in the sensitivity analysis include anode/cathode temperatures, pressure, applied voltage, gap distance, gap length, molar fraction of SiH4, and flow speed. This work offers insight into the effects of all design and control variables.

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Schram, Daniel C. "Plasma processing and chemistry". Pure and Applied Chemistry 74, nr 3 (1.01.2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.

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Plasma deposition and plasma conversion can be characterized by five steps: production by ionization, transfer of chemistry to precursors, transport of radicals to the surface, surface interactions with deposition, recirculation and generation of new monomers. For very fast deposition, large flows of radicals are needed and a regime is reached, in which monolayer coverage is reached in a very short time. Such large flows of radicals can be obtained by ion-induced interactions, as the C2H radical from acetylene for a-C:H deposition, or by H atom abstraction as the SiH3 radical from SiH4 for a-Si:H deposition. These radicals with intermediate sticking coefficient are advantageous as they are mobile and have a finite dwelling time at the surface. By such a pure radical mechanism, good layers can be formed with very high growth rates, if large radical fluxes can be reached. This regime of high fluence is also interesting for conversion, of which ammonia formation from hydrogen and nitrogen atoms is given as an example. These new approaches offer new possibilities for further development of the field in close connection with surface science, catalysis, and materials science.

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Nakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita i Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4". Journal of Non-Crystalline Solids 77-78 (grudzień 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.

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Park, Hwanyeol, i Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma". Coatings 11, nr 9 (29.08.2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

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The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surface reactivity of Si2H6 on both hydrogenated (H-covered) Si(001) and Si(111) surfaces. The reactivity of Si2H6 molecules on hydrogenated Si surfaces was more energetically favorable than on clean Si surfaces. We also found that the hydrogenated Si(111) surface is the most efficient surface because the dissociation of Si2H6 on the hydrogenated Si(111) surface are thermodynamically and kinetically more favorable than those on the hydrogenated Si(001) surface. Finally, we simulated the SiH4/He capacitively coupled plasma (CCP) discharges for Si:H films deposition.

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Kim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors". Coatings 12, nr 4 (28.03.2022): 457. http://dx.doi.org/10.3390/coatings12040457.

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In this study, the effect of dielectric elements on plasma radial uniformity was analyzed for a 300 mm wafer process in a capacitively coupled plasma deposition reactor. Based on a two-dimensional self-consistent fluid model, numerical simulations were performed for SiH4/He discharges at 1200 Pa and at the radio frequency of 13.56 MHz. Although in current plasma processes the wafer is often coated with non-conducting films and placed on a ceramic substrate, related materials have not been analyzed. Therefore, the plasma characteristics were studied in depth by changing the wafer material from silicon to quartz, the electrode material from aluminum to aluminum nitride, and the sidewall material from quartz to perfect dielectric. It was demonstrated that dielectric elements with a lower dielectric constant modify the spatial distributions of plasma parameters. In spite of the thinness of the wafer, as the dielectric constant of the wafer decreases, the electric field at the wafer edge becomes weaker owing to the stronger surface-charging effect. This gives rise to the relatively lower density of reactive species such as SiH2+, Si+, He*, and SiH3 near the wafer edge. In addition, radially uniform plasma was induced by the perfect dielectric sidewall, regardless of the dielectric constant of the wafer. This modification occurred because the radial positions of the peak values of the plasma parameters were moved away from the wafer edge. Therefore, the uniform distribution of the plasma density could be largely achieved by the optimal combination of dielectric elements.

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Milne, S. B., Y. Q. Fu, J. K. Luo, A. J. Flewitt, S. Pisana, A. Fasoli i W. I. Milne. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films". Journal of Nanoscience and Nanotechnology 8, nr 5 (1.05.2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.

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Nanocrystalline Si films were prepared with a RF-PECVD system using different SiH4/H2 ratios, plasma powers, substrate temperatures and annealing conditions. The film's intrinsic stress was characterized in relation to the crystallization fraction. Results show that an increasing H2 gas ratio, plasma power or substrate temperature can shift the growth mechanism across a transition point, past which nanocrystalline Si is dominant in the film structure. The film's intrinsic stress normally peaks during this transition region. Different mechanisms of stress formation and relaxation during film growth were discussed, including ion bombardment effects, hydrogen induced bond-reconstruction and nanocomposite effects (nanocrystals embedded in an amorphous Si matrix). A three-parameter schematic plot has been proposed which is based on the results obtained. The film structure and stress are presented in relation to SiH4 gas ratio, plasma power and temperature.

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Yuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui i Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, nr 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.

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Jo, Sanghyun, Suik Kang, Kyungjun Lee i Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas". Coatings 12, nr 9 (15.09.2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

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This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial distance between the electrode edge and the sidewall), electrical condition of the sidewall, and position of the powered electrode, were considered. In addition, by increasing the gas pressure while varying the sidewall condition, we observed modification of the plasma distributions and, thus, the deposition rate profiles. According to the results, the shift in He* distributions was mainly due to the reduction in the electron mean free path under conditions of gas pressure higher than 100 Pa, as well as local perturbations in the ambipolar electric field due to the finite electrode structure. Small additions of SiH4 largely changed the He* density profile in the midplane of the discharge due to He* quenching. Furthermore, we found that the wide sidewall gap did not improve deposition uniformity against the expectation. This was because the excitation and ionization rate profiles were enhanced and localized only near the bottom electrode edge.

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Kim, Dong-Joo, i Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process". Korean Journal of Chemical Engineering 25, nr 4 (lipiec 2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.

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Thang, Doan Ha, Hiroshi Muta i Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures". Thin Solid Films 516, nr 13 (maj 2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.

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