Artykuły w czasopismach: „Piezoelectric films”

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Tyunina, Marina, Jan Miksovsky, Tomas Kocourek i Alexandr Dejneka. "Hysteresis-Free Piezoresponse in Thermally Strained Ferroelectric Barium Titanate Films". Electronic Materials 2, nr 1 (14.01.2021): 17–23. http://dx.doi.org/10.3390/electronicmat2010002.

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Modern technology asks for thin films of sustainable piezoelectrics, whereas electro-mechanical properties of such films are poorly explored and controlled. Here, dynamic and quasi-static polarization, dielectric, and piezoelectric responses were experimentally studied in thin-film stacks of barium titanate sandwiched between electrodes and grown on top of strontium titanate substrate. Accurate piezoelectric characterization was secured by using double beam interferometric technique. All out-of-plane responses were found to be hysteresis-free. Effective piezoelectric coefficient ~50 pm/V and linear strain-voltage characteristic were achieved. The observed behavior was ascribed to field induced out-of-plane polarization, whereas spontaneous polarization is in-plane due to in-plane tensile thermal strain. Hysteresis-free linear piezoresponse was anticipated in thin films on commercial silicon substrates, enabling large thermal strain.

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Miriyala, Kumaraswamy, i Ranjith Ramadurai. "Microstructural influence on piezoresponse and leakage current behavior of Na0.5Bi0.5TiO3 Thin Films". MRS Advances 1, nr 37 (2016): 2597–602. http://dx.doi.org/10.1557/adv.2016.350.

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AbstractSodium bismuth titanate (Na0.5Bi0.5TiO3: NBT) a lead free piezoelectric; exhibits promising features such that it could be an alternate to lead based piezoelectrics. In this work, we report the microstructural influence on piezoelectric and leakage current behavior of NBT thin films grown by pulsed laser ablation (PLD). Various microstructural features like coarse faceted grains and fine spherical grains was achieved by effective optimization of substrate temperature and oxygen partial pressures. The studies reveals that, leakage current of NBT thin films were dominated by interface limited modified Schottky emission type of conduction. The piezoelectric domain studies reveal that for NBT thin films with fine spherical grain the domain pattern was highly dominated by the morphology and in the case of coarse faceted grains the domains were relatively large and the domains were extending beyond the grain boundaries.

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Zhang Xin-Wu i Zhang Xiao-Qing. "Piezoelectric and acoustic behavior of polypropylene piezoelectret films". Acta Physica Sinica 62, nr 16 (2013): 167702. http://dx.doi.org/10.7498/aps.62.167702.

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SHIOSAKI, Tadashi. "Piezoelectric Thin Films". Journal of the Ceramic Society of Japan 99, nr 1154 (1991): 836–41. http://dx.doi.org/10.2109/jcersj.99.836.

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Park, D. S., M. Hadad, L. M. Riemer, R. Ignatans, D. Spirito, V. Esposito, V. Tileli i in. "Induced giant piezoelectricity in centrosymmetric oxides". Science 375, nr 6581 (11.02.2022): 653–57. http://dx.doi.org/10.1126/science.abm7497.

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Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric materials must have a noncentrosymmetric crystal structure. For more than a century, this has remained a major obstacle for finding piezoelectric materials. We circumvented this limitation by breaking the crystallographic symmetry and inducing large and sustainable piezoelectric effects in centrosymmetric materials by the electric field–induced rearrangement of oxygen vacancies. Our results show the generation of extraordinarily large piezoelectric responses [with piezoelectric strain coefficients ( d 33 ) of ~200,000 picometers per volt at millihertz frequencies] in cubic fluorite gadolinium-doped CeO 2− x films, which are two orders of magnitude larger than the responses observed in the presently best-known lead-based piezoelectric relaxor–ferroelectric oxide at kilohertz frequencies. These findings provide opportunities to design piezoelectric materials from environmentally friendly centrosymmetric ones.

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Maiwa, Hiroshi. "Electromechanical Properties of Ferroelectric Thin Films for Piezoelectric MEMS Applications". Advances in Science and Technology 45 (październik 2006): 2422–31. http://dx.doi.org/10.4028/www.scientific.net/ast.45.2422.

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Piezoelectric microelectromechanical systems (MEMS) employing ferrroelectric thin films have been extensively studied. In this paper, materials issues of the piezoeletric films are presented. Temperature dependence of the electrical and electromechanical properties of Pb(ZrxTi1-x)O3 (PZT, x= 0.3, 0.52, and 0.7) thin films were measured using scanning probe microscopy in the temperature range from -100°C to 150°C. The field-induced displacement increased with increase of the temperature; however, their temperature dependence was relatively small, compared with that reported on bulk PZT ceramics. Thus far, the use of PZT film has been most widely studied for MEMS applications. However, the lead toxicity associated with PZT and other lead oxide-based ferroelectrics is problematic. Therefore, properties of the lead-free thin film piezoelectrics are also described in this paper. As candidate for the lead-free piezoelectrics, Bi4-xNdxTi3O12 (BNT) and Ba(Zr0.2Ti0.8)O3 (BZT) thin films are chosen. BNT and BZT films prepared by chemical solution deposition exhibit field-induced strain corresponding to 38 pm/V and 35 pm/V, respectively.

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Yi, Juan, Yiheng Song, Shixian Zhang, Zhilong Cao, Chenjian Li i Chuanxi Xiong. "Corona−Poled Porous Electrospun Films of Gram−Scale Y−Doped ZnO and PVDF Composites for Piezoelectric Nanogenerators". Polymers 14, nr 18 (19.09.2022): 3912. http://dx.doi.org/10.3390/polym14183912.

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For digging out eco−friendly and well−performed energy harvesters, piezoelectric nanogenerators are preferred owing to their effortless assembly. Corona−poling promotes output performance of either aligned or porous PVDF electrospun films and higher piezoelectric output was achieved by corona−poled porous PVDF electrospun films due to more poled electret dipoles in pores. Increasing the duration of electrospinning rendered more electret dipoles in PVDF porous electrospun films, resulting in higher piezoelectric output. Moreover, corona−poled PVDF/Y−ZnO porous electrospun films performed better than corona−poled PVDF/ZnO porous electrospun films because of the larger polar crystal face of Y−ZnO. Flexible piezoelectric polymer PVDF and high−piezoelectric Y−ZnO complement each other in electrospun films. With 15 wt% of Y−ZnO, corona−poled PVDF/Y−ZnO porous electrospun films generated maximum power density of 3.6 μW/cm2, which is 18 times that of PVDF/BiCl3 electrospun films.

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Trolier-McKinstry, Susan, Shujun Zhang, Andrew J. Bell i Xiaoli Tan. "High-Performance Piezoelectric Crystals, Ceramics, and Films". Annual Review of Materials Research 48, nr 1 (lipiec 2018): 191–217. http://dx.doi.org/10.1146/annurev-matsci-070616-124023.

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Piezoelectric materials convert between electrical and mechanical energies such that an applied stress induces a polarization and an applied electric field induces a strain. This review describes the fundamental mechanisms governing the piezoelectric response in high-performance piezoelectric single crystals, ceramics, and thin films. While there are a number of useful piezoelectric small molecules and polymers, the article focuses on inorganic materials displaying the piezoelectric effect. Piezoelectricity is first defined, and the mechanisms that contribute are discussed in terms of the key crystal structures for materials with large piezoelectric coefficients. Exemplar systems are then discussed and compared for the cases of single crystals, bulk ceramics, and thin films.

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Lavine, Marc S. "Piezoelectric bioorganic thin films". Science 373, nr 6552 (15.07.2021): 291.15–293. http://dx.doi.org/10.1126/science.373.6552.291-o.

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Nakagawa, Yasuhiko, i Yasuo Gomi. "New piezoelectric Ta2O5thin films". Applied Physics Letters 46, nr 2 (15.01.1985): 139–40. http://dx.doi.org/10.1063/1.95712.

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Drezner, Y., M. Nitzani i S. Berger. "Piezoelectric ultrathin BaTiO3 films". Applied Physics Letters 86, nr 4 (24.01.2005): 042906. http://dx.doi.org/10.1063/1.1857084.

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Li, Bingyue, Zude Xie, Hanzhong Liu, Liming Tang i Keqiu Chen. "A Review of Ultrathin Piezoelectric Films". Materials 16, nr 8 (14.04.2023): 3107. http://dx.doi.org/10.3390/ma16083107.

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Due to their high electromechanical coupling and energy density properties, ultrathin piezoelectric films have recently been intensively studied as key materials for the construction of miniaturized energy transducers, and in this paper we summarize the research progress. At the nanoscale, even a few atomic layers, ultrathin piezoelectric films have prominent shape anisotropic polarization, that is, in-plane polarization and out-of-plane polarization. In this review, we first introduce the in-plane and out-of-plane polarization mechanism, and then summarize the main ultrathin piezoelectric films studied at present. Secondly, we take perovskite, transition metal dichalcogenides, and Janus layers as examples to elaborate the existing scientific and engineering problems in the research of polarization, and their possible solutions. Finally, the application prospect of ultrathin piezoelectric films in miniaturized energy converters is summarized.

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Handoko, Albertus D., i Gregory K. L. Goh. "Hydrothermal epitaxy of lead free (Na,K)NbO3-based piezoelectric films". MRS Proceedings 1547 (2013): 45–52. http://dx.doi.org/10.1557/opl.2013.634.

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ABSTRACTLead free niobate solid solutions can exhibit piezoelectric properties comparable to that of lead zirconate titanate piezoelectrics in the vicinity of its morphotropic phase boundary (MPB). Here we describe how (Na,K)NbO3 and (Na,K)NbO3-LiTaO3 solid solution thin films can be grown epitaxially by the hydrothermal method at temperatures of 200 °C or below in water and be made ferro- and piezoelectrically active by a simple 2 step post growth treatment.

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Lou, Ke Xing, Gong Xun Cao, Qiong You i Xiao Qing Zhang. "Influence of Porosity on Polarization in Piezoelectret Films with Regular Microstructure". Applied Mechanics and Materials 117-119 (październik 2011): 1235–38. http://dx.doi.org/10.4028/www.scientific.net/amm.117-119.1235.

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Piezoelectret films, with a controlled ordered microstructure and various porosities, were fabricated by using a patterning-fusion bonding method. The polarization in the films with various porosities is investigation. The results show that the critical applied bias voltage for the breakdown in the inner voids is dependent on the porosity in the films. The threshold voltages for the polarization in the fabricated films with the porosities of 0, 25 and 44% are around 4000, 2000 and 2000 V, respectively. The piezoelectric d33 coefficients are enhanced by increasing the applied bias voltage during polarization.

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Pérez, J., P. M. Vilarinho, A. L. Kholkin, J. Manuel Herrero i C. Zaldo. "Effect of Processing Conditions on the Piezoelectric Properties of Sol-gel Derived Pb(Zr,Ti)O3 Films for Micromechanical Applications". Journal of Materials Research 20, nr 6 (1.06.2005): 1428–35. http://dx.doi.org/10.1557/jmr.2005.0203.

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Lead zirconate titanate (PZT) films of composition close to the morphotropic phase boundary were deposited onto standard Si/SiO2/Ti/Pt substrates using a modified sol-gel process. The preparation conditions were optimized to obtain high-quality films at sufficiently low temperature (Ta - 500 °C). The dielectric, ferroelectric, and piezoelectric properties of the films were then measured as a function of the annealing temperature and the number of distillations to evaluate their suitability for micromechanical applications. The maximum values of the longitudinal charge and voltage piezoelectric coefficients were d33 ∼ 65 pm/V and g33 ∼ 4 × 10−3 Vm/N, respectively. The results indicate that the piezoelectric properties improved and became saturated with increasing number of distillations and are almost independent on Ta. Only moderate decrease of the piezoelectric response with frequency suggests that the investigated PZT films can be used in high-frequency piezoelectric applications. The results are discussed in terms of the microstructure and interface effects on the piezoelectric deformation in ferroelectric thin films.

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Han, Jing, Dong Li, Chunmao Zhao, Xiaoyan Wang, Jie Li i Xinzhe Wu. "Highly Sensitive Impact Sensor Based on PVDF-TrFE/Nano-ZnO Composite Thin Film". Sensors 19, nr 4 (18.02.2019): 830. http://dx.doi.org/10.3390/s19040830.

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A thin film of polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) has good flexibility and simple preparation process. More importantly, compared with PVDF, its piezoelectric β-phase can be easily formed without mechanical stretching. However, its piezoelectricity is relatively lower. Therefore, at present, PVDF-TrFE is always compounded with other kinds of piezoelectric materials to solve this problem. The effect of nano-ZnO doping amount on the sensing characteristics of the piezoelectric films was studied. PVDF-TrFE/nano-ZnO films with different nano-ZnO contents were prepared by spin coating process and packaged. The dispersion of nano-ZnO dopants and the crystallinity of β-phase in piezoelectric films with different nano-ZnO contents were observed by scanning electron microscopy and X-ray diffraction, and the piezoelectric strain constants and dielectric constants were measured, respectively. The effect of different nano-ZnO contents on the output performance of the piezoelectric sensor was obtained by a series of impact experiments. The results show that the piezoelectric strain constant and dielectric constant can be increased by doping nano-ZnO in PVDF-TrFE. Moreover, the doping amount of nano-ZnO in PVDF-TrFE is of great significance for improving the piezoelectric properties of PVDF-TrFE/nano-ZnO thin films. Among the prepared piezoelectric films, the output voltage of PVDF-TrFE/nano-ZnO piezoelectric sensor with 7.5% nano-ZnO doping amount is about 5.5 times that of pure PVDF-TrFE. Thus, the optimal range of the doping amount for nano-ZnO is about 4–10%.

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Carmona-Cejas, José Manuel, Teona Mirea, Jesús Nieto, Jimena Olivares, Valery Felmetsger i Marta Clement. "Homogeneity and Thermal Stability of Sputtered Al0.7Sc0.3N Thin Films". Materials 16, nr 6 (8.03.2023): 2169. http://dx.doi.org/10.3390/ma16062169.

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This work presents a study on the homogeneity and thermal stability of Al0.7Sc0.3N films sputtered from Al-Sc segmented targets. The films are sputtered on Si substrates to assess their structural properties and on SiO2/Mo-based stacked acoustic mirrors to derive their piezoelectric activity from the frequency response of acoustic resonators. Post-deposition annealing at temperatures up to 700 °C in a vacuum are carried out to test the stability of the Al0.7Sc0.3N films and their suitability to operate at high temperatures. Despite the relatively constant radial composition of the films revealed from RBS measurements, a severe inhomogeneity in the piezoelectric activity is observed across the wafer, with significantly poorer activity in the central zone. RBS combined with NRA analysis shows that the zones of lower piezoelectric activity are likely to show higher surface oxygen adsorption, which is attributed to higher ion bombardment during the deposition process, leading to films with poorer crystalline structures. AFM analysis reveals that the worsening of the material properties in the central area is also accompanied by an increased roughness. XRD analysis also supports this hypothesis, even suggesting the possibility of a ScN non-piezoelectric phase coexisting with the AlScN piezoelectric phase. Thermal treatments do not result in great improvements in terms of piezoelectric activity and crystalline structure.

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Ma, Youcao, Jian Song, Yuyao Zhao, Kiyotaka Tanaka, Shijunbo Wu, Chao Dong, Xubo Wang i in. "Excellent Uniformity and Properties of Micro-Meter Thick Lead Zirconate Titanate Coatings with Rapid Thermal Annealing". Materials 16, nr 8 (18.04.2023): 3185. http://dx.doi.org/10.3390/ma16083185.

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Lead zirconate titanate (PZT) films have shown great potential in piezoelectric micro-electronic-mechanical system (piezo-MEMS) owing to their strong piezoelectric response. However, the fabrication of PZT films on wafer-level suffers with achieving excellent uniformity and properties. Here, we successfully prepared perovskite PZT films with similar epitaxial multilayered structure and crystallographic orientation on 3-inch silicon wafers, by introducing a rapid thermal annealing (RTA) process. Compared to films without RTA treatment, these films exhibit (001) crystallographic orientation at certain composition that expecting morphotropic phase boundary. Furthermore, dielectric, ferroelectric and piezoelectric properties on different positions only fluctuate within 5%. The relatively dielectric constant, loss, remnant polarization and transverse piezoelectric coefficient are 850, 0.1, 38 μC/cm2 and −10 C/m2, respectively. Both uniformity and properties have reached the requirement for the design and fabrication of piezo-MEMS devices. This broadens the design and fabrication criteria for piezo-MEMS, particularly for piezoelectric micromachined ultrasonic transducers.

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Feng, Guang-Huan, Cheng-Ying Li, Yueh-Han Chen, Yi-Chen Ho, Sheng-Yuan Chu, Cheng-Che Tsai i Cheng-Shong Hong. "Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique". ECS Journal of Solid State Science and Technology 11, nr 12 (1.12.2022): 123005. http://dx.doi.org/10.1149/2162-8777/aca796.

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In this study, AlN-based films are deposited using a sputtering deposition method, and Mo dopants with different concentrations are added in the proposed system by controlling the sputtering power in order to improve the crystallinity and piezoelectric properties of AlN films. Through a detailed material analysis including energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), piezoresponse force microscopy (PFM), and nano-indentation, the piezoelectric property optimization mechanism of proposed films was explored and the best process parameters were determined. The piezoelectric coefficient d33 of AlN:Mo (3.46%) films reached 7.33 pm V−1, which is 82.79% higher than that of undoped AlN. As compared with the reported data about the dopants in AlN system, our proposed films have the better d33 values with those dopants in AlN-based films except Sc dopants. However, Sc is known as an expensive metal, our proposed films could be applied to low-cost piezoelectric MEMS applications.

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Liu, J. M., B. Pan, H. L. W. Chan, S. N. Zhu, Y. Y. Zhu i Z. G. Liu. "Piezoelectric coefficient measurement of piezoelectric thin films: an overview". Materials Chemistry and Physics 75, nr 1-3 (kwiecień 2002): 12–18. http://dx.doi.org/10.1016/s0254-0584(02)00023-8.

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Aleksandrova, Mariya, Tatyana Ivanova, Frank Hamelmann, Velichka Strijkova i Kostadinka Gesheva. "Study of Sputtered ZnO:Ga2O3 Films for Energy Harvesting Applications". Coatings 10, nr 7 (5.07.2020): 650. http://dx.doi.org/10.3390/coatings10070650.

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Thin films of ZnO:Ga2O3 (ZGO) were deposited by radio frequency (RF) sputtering at voltages of 0.5, 0.9 and 1.1 kV. The films were studied with respect to their suitability in flexible piezoelectric nanogenerators. The analysis of the spectroscopic and microscopic results showed that piezoelectric features were revealed for the films grown at all sputtering voltages, but the most favorable morphology in terms of low roughness was achieved at 1.1 kV. The effect of the sputtering voltage on the films crystallinity and lattice strain was studied. It was found that the increasing sputtering voltage promoted the films crystallization. Additionally, the presence of oxygen vacancies in the piezoelectric films was negligible as it is not a major factor affecting their performance. The electrical measurements of the Ag/ZnO:Ga2O3/Ag harvester on a flexible substrate in the low-frequency range showed a piezoelectric voltage of 414 mV, a current of 10.4 µA and an electric power output of 1.4 µW at a mass load of 100 g. These results were achieved by a simple architecture of a single piezoelectric layer with a relatively small size of 3 cm2 and small piezoelectric film thickness (600 nm) containing lead-free material. It was proven that the sputtered ZGO films are suitable for energy harvesting elements and their performance could be tuned by the sputtering voltage. Another possible application of the proposed device, excluding low-frequency vibrational harvesting, could be a pressure sensor or strain gauge, due to the good linearity of the electrical parameter dependences on the strain.

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Yang, Fan, Jun Li, Yin Long, Ziyi Zhang, Linfeng Wang, Jiajie Sui, Yutao Dong i in. "Wafer-scale heterostructured piezoelectric bio-organic thin films". Science 373, nr 6552 (15.07.2021): 337–42. http://dx.doi.org/10.1126/science.abf2155.

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Piezoelectric biomaterials are intrinsically suitable for coupling mechanical and electrical energy in biological systems to achieve in vivo real-time sensing, actuation, and electricity generation. However, the inability to synthesize and align the piezoelectric phase at a large scale remains a roadblock toward practical applications. We present a wafer-scale approach to creating piezoelectric biomaterial thin films based on γ-glycine crystals. The thin film has a sandwich structure, where a crystalline glycine layer self-assembles and automatically aligns between two polyvinyl alcohol (PVA) thin films. The heterostructured glycine-PVA films exhibit piezoelectric coefficients of 5.3 picocoulombs per newton or 157.5 × 10−3 volt meters per newton and nearly an order of magnitude enhancement of the mechanical flexibility compared with pure glycine crystals. With its natural compatibility and degradability in physiological environments, glycine-PVA films may enable the development of transient implantable electromechanical devices.

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Muralt, Paul. "Piezoelectrics in Micro and Nanosystems: Solutions for a Wide Range of Applications". Journal of Nanoscience and Nanotechnology 8, nr 5 (1.05.2008): 2560–67. http://dx.doi.org/10.1166/jnn.2008.634.

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Piezoelectric thin films have interesting prospects in a number of applications for which miniaturization is a driving force. Miniaturization means higher frequency, or higher resolution, or increased functionality. This paper gives a short review on piezoelectric thin films, their deposition processes, integration, properties and applications in microsystems (MEMS), concentrating on the most frequently investigated piezoelectric thin film materials.

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Rizzoni, Raffaella, Michele Serpilli, Maria Letizia Raffa i Frédéric Lebon. "A Micromechanical Model for Damage Evolution in Thin Piezoelectric Films". Coatings 13, nr 1 (3.01.2023): 82. http://dx.doi.org/10.3390/coatings13010082.

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Thin-film piezoelectric materials are advantageous in microelectromechanical systems (MEMS), due to large motion generation, high available energy and low power requirements. In this kind of application, thin piezoelectric films are subject to mechanical and electric cyclic loading, during which damage can accumulate and eventually lead to fracture. In the present study, continuum damage mechanics and asymptotic theory are adopted to model damage evolution in piezoelectric thin films. Our purpose is to develop a new interface model for thin piezoelectric films accounting for micro-cracking damage of the material. The methods used are matched asymptotic expansions, to develop an interface law, and the classic thermodynamic framework of continuum damage mechanics combined with Kachanov and Sevostianov’s theory of homogenization of micro-cracked media, to characterize the damaging behavior of the interface. The main finding of the paper is a soft imperfect interface model able to simulate the elastic and piezoelectric behavior of thin piezoelectric film in the presence of micro-cracking and damage evolution. The obtained interface model is expected to be a useful tool for damage evaluation in MEMS applications. As an example, an electromechanically active stack incorporating a damaging piezoelectric layer is studied. The numerical results indicate a non-linear evolution of the macroscopic response and a damage accumulation qualitatively consistent with experimental observations.

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Muralt, Paul. "Piezoelectric thin films for mems". Integrated Ferroelectrics 17, nr 1-4 (wrzesień 1997): 297–307. http://dx.doi.org/10.1080/10584589708013004.

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Silva, C. C., D. Thomazini, A. G. Pinheiro, N. Aranha, S. D. Figueiró, J. C. Góes i A. S. B. Sombra. "Collagen–hydroxyapatite films: piezoelectric properties". Materials Science and Engineering: B 86, nr 3 (październik 2001): 210–18. http://dx.doi.org/10.1016/s0921-5107(01)00674-2.

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WANG, J., C. CHEN i T. LU. "Indentation responses of piezoelectric films". Journal of the Mechanics and Physics of Solids 56, nr 12 (grudzień 2008): 3331–51. http://dx.doi.org/10.1016/j.jmps.2008.09.009.

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Jung, Soo Young, i Seung-Hyub Baek. "Piezoelectric Thin Films for Microtransducer". Ceramist 22, nr 1 (31.03.2019): 82–95. http://dx.doi.org/10.31613/ceramist.2019.22.1.07.

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Qaiss, Abouelkacem, Hassan Saidi, Omar Fassi-Fehri i Mosto Bousmina. "Cellular polypropylene-based piezoelectric films". Polymer Engineering & Science 52, nr 12 (19.06.2012): 2637–44. http://dx.doi.org/10.1002/pen.23219.

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Kanno, Isaku, Jun Ouyang, Jun Akedo, Takeshi Yoshimura, Barbara Malič i Paul Muralt. "Piezoelectric thin films for MEMS". Applied Physics Letters 122, nr 9 (27.02.2023): 090401. http://dx.doi.org/10.1063/5.0146681.

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Wang, Yingying, Hanfei Zhu, Yinxiu Xue, Peng Yan i Jun Ouyang. "Microstructure Evolution with Rapid Thermal Annealing Time in (001)-Oriented Piezoelectric PZT Films Integrated on (111) Si". Materials 16, nr 5 (2.03.2023): 2068. http://dx.doi.org/10.3390/ma16052068.

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In our recently published paper (Y.-Y. Wang et al., High performance LaNiO3-buffered, (001)-oriented PZT piezoelectric films integrated on (111) Si, Appl. Phys. Lett. 121, 182902, 2022), highly (001)-oriented PZT films with a large transverse piezoelectric coefficient e31,f prepared on (111) Si substrates were reported. This work is beneficial for the development of piezoelectric micro-electro-mechanical systems (Piezo-MEMS) because of (111) Si’s isotropic mechanical properties and desirable etching characteristics. However, the underlying mechanism for the achievement of a high piezoelectric performance in these PZT films going through a rapid thermal annealing process has not been thoroughly analyzed. In this work, we present complete sets of data in microstructure (XRD, SEM and TEM) and electrical properties (ferroelectric, dielectric and piezoelectric) for these films with typical annealing times of 2, 5, 10 and 15 min. Through data analyses, we revealed competing effects in tuning the electrical properties of these PZT films, i.e., the removal of residual PbO and proliferation of nanopores with an increasing annealing time. The latter turned out to be the dominating factor for a deteriorated piezoelectric performance. Therefore, the PZT film with the shortest annealing time of 2 min showed the largest e31,f piezoelectric coefficient. Furthermore, the performance degradation occurred in the PZT film annealed for 10 min can be explained by a film morphology change, which involved not only the change in grain shape, but also the generation of a large amount of nanopores near its bottom interface.

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Vatlin, Ivan S., Roman V. Chernozem, Alexander S. Timin, Anna P. Chernova, Evgeny V. Plotnikov, Yulia R. Mukhortova, Maria A. Surmeneva i Roman A. Surmenev. "Bacteriostatic Effect of Piezoelectric Poly-3-Hydroxybutyrate and Polyvinylidene Fluoride Polymer Films under Ultrasound Treatment". Polymers 12, nr 1 (20.01.2020): 240. http://dx.doi.org/10.3390/polym12010240.

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Antibiotic resistance of bacteria stimulates the development of new treatment approaches. Piezoelectric-catalysis has attracted much attention due to the possibility to effectively provide antibacterial effect via generation of reactive oxygen species. However, the influence of the surface charge or potential of a piezopolymer on bacteria has not been sufficiently studied so far. This study reports the fabrication and characterization of thin films of piezoelectric polyhydroxybutyrate, polyvinylidene fluoride, and polyvinylidene fluoride trifluoroethylene as well as non-piezoelectric polycaprolactone polymers fabricated using solution casting approach. The piezoelectric coefficient (d33) and surface electric peak-to-peak potential generated by the cyclic mechanical stress applied to the films were measured. Neither any toxic effect of the polymer films nor ultrasound influence on Escherichia coli bacteria behavior is observed. However, significant inhibition of the growth of bacteria is revealed during mechanical stimulation of piezoelectric samples via ultrasound treatment. Thus, this study demonstrates clear bacteriostatic effect of piezoelectric polymers for different tissue engineering applications.

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FENG, ZUYONG, DONGQI SHI, SHIXUE DOU, YIHUA HU i XINGUI TANG. "LARGE PIEZOELECTRIC EFFECT IN LOW-TEMPERATURE-SINTERED LEAD-FREE (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 THICK FILMS". Functional Materials Letters 05, nr 03 (wrzesień 2012): 1250029. http://dx.doi.org/10.1142/s1793604712500294.

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High-quality piezoelectric ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films with dense and homogenous microstructures were fabricated at a low sintering temperature (900°C) using a CuBi 2 O 4 sintering aid. The 10 μm thick film exhibited a high longitudinal piezoelectric constant d33, eff of 210 pC/N with estimated unconstrained d33 value of 560 pC/N very close to that in the corresponding bulks. Such excellent piezoelectric effect in the low-temperature sintered ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films is comparable to the case of lead-based PZT thick films, and may be a promising application in lead-free microdevices such as piezoelectric microelectromechanical systems (MEMS).

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Nong, Huyen T. T., Anh N. Nguyen, Jeanne Solard, Andres Gomez i Silvana Mercone. "Robust Piezoelectric Coefficient Recovery by Nano-Inclusions Dispersion in Un-Poled PVDF–Ni0.5Zn0.5Fe2O4 Ultra-Thin Films". Applied Sciences 12, nr 3 (2.02.2022): 1589. http://dx.doi.org/10.3390/app12031589.

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This work aimed to study the influence of the hybrid interface in polyvinylidene fluoride (PVDF)-based composite thin films on the local piezoelectric response. Our results provide evidence of a surprising contradiction: the optimization process of the β-phase content using nano-inclusions did not correspond to the expected nanoscale piezoelectric optimization. A large piezoelectric loss was observed at the nanoscale level, which contrasts with the macroscopic polarization measurement observations. Our main goal was to show that the dispersion of metallic ferromagnetic nano-inclusions inside the PVDF films allows for the partial recovery of the local piezoelectric properties. From a dielectric point of view, it is not trivial to expect that keeping the same amount of the metallic volume inside the dielectric PVDF matrix would bring a better piezoelectric response by simply dispersing this phase. On the local resonance measured by PFM, this should be the worst due to the homogeneous distribution of the nano-inclusions. Both neat PVDF films and hybrid ones (0.5% in wt of nanoparticles included into the polymer matrix) showed, as-deposited (un-poled), a similar β-phase content. Although the piezoelectric coefficient in the case of the hybrid films was one order of magnitude lower than that for the neat PVDF films, the robustness of the polarized areas was reported 24 h after the polarization process and after several images scanning. We thus succeeded in demonstrating that un-poled polymer thin films can show the same piezoelectric coefficient as the poled one (i.e., 10 pm/V). In addition, low electric field switching (50 MV/m) was used here compared to the typical values reported in the literature (100–150 MV/m).

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Shayapov, Vladimir R., Alena L. Bogoslovtseva, Sergey Yu Chepkasov, Igor P. Asanov, Evgeny A. Maksimovskiy, Aleksandr V. Kapishnikov, Maria I. Mironova, Alina V. Lapega i Pavel V. Geydt. "Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering". Coatings 13, nr 7 (21.07.2023): 1281. http://dx.doi.org/10.3390/coatings13071281.

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The chemical composition, structure, and physical properties of aluminum nitride (AlN) films obtained using pulsed DC reactive magnetron sputtering in asymmetric bipolar mode have been studied. X-ray diffraction and electron diffraction confirmed the composition of c–axis textured hexagonal AlN films required for piezoelectric applications. The surface of the films obtained is quite smooth; the arithmetic average roughness does not exceed 2 nm. Transmission electron microscopy has shown the presence of a transition layer at the film–substrate interface. Transmission electron microscopy and X-ray photoelectron spectroscopy depth profile analysis have shown that the films have an oxidized surface layer which has an influence on the optical model of the films derived from ellipsometric data. However, it does not significantly influence the films’ piezoresponse. Piezoelectric force microscopy indicated a piezoelectric effect in the films that is uniform over their surface.

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Xu, Fang Chao, i Kazuhiro Kusukawa. "Characteristics of BNT Films Synthesized by a Hydrothermal Method". Advanced Materials Research 47-50 (czerwiec 2008): 73–76. http://dx.doi.org/10.4028/www.scientific.net/amr.47-50.73.

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Thin films of lead-free piezoelectric ceramics (Bi1/2Na1/2)TiO3 (abbreviated as BNT) were prepared on pure titanium substrates by a hydrothermal method. Several properties of BNT films synthesized in various Bi3+ and Ti4+ concentrations of starting materials were investigated using SEM, EDX, XRD and other instruments. Moreover, the effects of ion concentrations of starting materials on permittivity and piezoelectric effect of BNT films were discussed. The Bi2O3 crystals were more deposited on the surface of films with the increase of the concentration of Bi3+. The relationship between the deflection and applied electric field was measured on unimorph cantilever type actuators made from three samples which had different XRD patterns. The results showed that the piezoelectric effect of BNT films was dependent on the crystallization level of BNT.

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Suchaneck, Gunnar, O. Volkonskiy, Gerald Gerlach, Zdenek Hubička, A. Dejneka, Lubomir Jastrabik, D. Kiselev, I. Bdikin i Andréi L. Kholkin. "Piezoelectric PZT Thin Films on Flexible Copper-Coated Polymer Films". Materials Science Forum 636-637 (styczeń 2010): 392–97. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.392.

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This work analyzes the processing of Pb(Zr,Ti)O3 (PZT) thin films directly on copper-coated polymer films. PZT thin film deposition was performed onto the metallized Kapton® films using a single RF plasma jet. In order to reduce the interaction of PZT and Cu during the initial growth stage, an ultrathin amorphous TiO2-x seeding layer was sputter-deposited prior to PZT deposition. The film texture was a mixture of (111)-oriented perovskite nanocrystals, rutile and pyrochlore. Topography and piezoelectric in-plane and out-of-plane response of the films were evaluated using a commercial AFM adapted for piezoforce measurements. The as-deposited films were self-polarized with polarization pointing at the surface of the sample. Polarization was switchable and a piezoelectric hysteresis was obtained.

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Muralt, P., J. Conde, A. Artieda, F. Martin i M. Cantoni. "Piezoelectric materials parameters for piezoelectric thin films in GHz applications". International Journal of Microwave and Wireless Technologies 1, nr 1 (luty 2009): 19–27. http://dx.doi.org/10.1017/s1759078709000038.

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Piezoelectric thin films have existing and promising new applications in microwave filter technologies. The final performance depends on many parameters, and very specifically on the materials properties of each involved material. In this article, materials and properties for thin-film bulk acoustic wave resonators are discussed on some selected issues: the piezoelectric coefficients and acoustic losses of AlN, the relation of the first one with microstructural parameters, the inclusion of parasitic elements, and the merits of and problems with ferroelectric materials.

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Palshikar, Ajay, i N. N. Sharma. "Review on Piezoelectric Materials as Thin Films with their Applications". Material Science Research India 12, nr 1 (7.03.2015): 79–84. http://dx.doi.org/10.13005/msri/120113.

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Piezoelectric Materials have played a pivotal role in the progress of Science and Technology since the First World War, being used historically as naturally occurring transducer for precise measurement or to transform energy from one form to the other while currently being used in the MEMS domain for sensing or energy harvesting. Thus this paper reviews piezoelectric materials and their applications in MEMS as thin films by categorizing the known materials in 3 types namely Naturally Occurring Materials, Piezoelectric Ceramics and Piezoelectric Polymers. Piezoelectric constants of the above mentioned materials are also enlisted.

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Kim, Seung-Hyun, Alice Leung, Eun Young Lee, Lindsay Kuhn, Wenyan Jiang, Dong-Joo Kim i Angus I. Kingon. "Non-Lead Based Piezoelectric Thin Films: Materials and Energy Harvesting Device". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, CICMT (1.09.2011): 000033–36. http://dx.doi.org/10.4071/cicmt-2011-ta14.

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Non-lead based piezoelectric thin films of (K,Na)(Nb,Ta)O3–BiFeO3 (NKNT-BF) were successfully fabricated by the chemical solution deposition method. Small concentration of BF (5 mol %) added into NKNT films led to a fully dense microstructure and enhanced dielectric and piezoelectric properties compared to pure NKNT films. The measured dielectric constant and piezoelectric d33 values were around 575 and 50 pC/N, respectively. A thin film NKNT-BF piezoelectric cantilever with a micromachined Si proof mass was fabricated for a low frequency vibration energy harvesting device. The average power and the power density of NKNT-BF energy harvesting cantilever with the device volume of 0.007 cm3 were 1.82 μW and 260 μW/cm3 at the resonance frequency of 130 Hz and the acceleration of 0.75 G. Even if these values were somewhat inferior to those of the conventional PZT energy harvesting device, NKNT-BF thin film provided the promising results as an alternative material of PZT for the piezoelectric MEMS applications in the future.

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Cao, G., Xiao Qing Zhang, Z. Sun, Ke Xing Lou i Z. Xia. "Polarization and Properties of Laminated Fluoropolymer Films". Materials Science Forum 687 (czerwiec 2011): 359–65. http://dx.doi.org/10.4028/www.scientific.net/msf.687.359.

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Laminated fluoropolymer films with regular void structure, fabricated by using a process consisting of the patterning and fusion bonding steps, are polarized to be piezoelectric. The influence of the applied voltage on the piezoelectric d33 coefficient is investigated. The measurements of ferroelectric-like polarization-voltage hysteresis loops are taken to further understand the capability of polarization in the laminated films. The compressive Young’s moduli of the films are determined from the dielectric resonance spectra. The results show that the laminated fluoropolymer films are piezoelectric after proper charging. The maximum d33 coefficients of the five-layer laminated piezoelectrets are achieved at the applied voltage of 5 kV. The remnant charge density of 0.3 mC/m2 is obtained from the polarization-voltage hysteresis loop at a bias voltage of 4 kV. The measured anti-resonance frequency and calculated compressive Young’s modulus for the five-layer laminated films are 112 kHz and 0.48 MPa, respectively.

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Zhang Tian-Le, Huang Xi, Zheng Kai, Zhang Xin-Wu, Wang Yu-Jie, Wu Li-Ming, Zhang Xiao-Qing, Zheng Jie i Zhu Biao. "Influence of polarization voltage on piezoelectric performance of polypropylene piezoelectret films". Acta Physica Sinica 63, nr 15 (2014): 157703. http://dx.doi.org/10.7498/aps.63.157703.

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Anisimkin, V. I., E. Verona, A. S. Kuznetsova i V. A. Osipenko. "Acoustic Wave Propagation Along Piezoelectric Plate Coated with Piezoelectric Films". Acoustical Physics 65, nr 2 (marzec 2019): 171–77. http://dx.doi.org/10.1134/s1063771019020027.

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An, Zhi-Hong, Lin-Min Huang, Jin-Bo Zhao, Qian-Qian Hu, Zhuan-Lan Sun, Huan Zheng i Xiao-Qing Zhang. "High performance laminated FEP/PTFE piezoelectret films for air-borne sound transducers". Acta Physica Sinica 71, nr 2 (2022): 027701. http://dx.doi.org/10.7498/aps.71.20211609.

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Piezoelectret (also known as ferroelectret) is a kind of cellular electret material with strong piezoelectric effect. Such a material exhibits flexibility, low density and small acoustic impedance. Therefore, piezoelectret is an ideal material for air-borne flexible sound transducers. Aiming at high-sensitivity and thermal-stability sound transducers, in this work, laminated fluorinated polyethylene propylene (FEP) and polytetrafluoroethylene (PTFE) piezoelectret film with a regular cellular microstructure is prepared by a procedure involving template-based cellular structure formation and polarization. The results show that the characteristic acoustic impedance of such a laminated FEP/PTFE film is 0.02 MRayl. The quasi-static piezoelectric charge coefficient d33 up to 800 pC/N is achieved in a small applied pressure range. The maximum value of sensitivity of the microphones based on laminated FEP/PTFE piezoelectrets film can reach to 6.4 mV/Pa at 1 kHz. Besides, the frequency response curve of the device is flat in the whole audio range. For an ultrasonic transmitter with a diameter of 20 mm, driven by a voltage of 600 V (Vp), the sound pressure level (SPL) generated by it increases from 80 to 90 dB (Ref. 20 µPA) as frequency increases from 40 to 80 kHz. The thermal stability of the sensitivity for the transducers made of such a laminated FEP/PTFE piezoelectret film is much superior to that of polypropylene (PP) piezoelectret based device. The sensitivity of the present device remains 26% of the initial value after being annealed at 125 ℃ for 211 h. The improvement of thermal stability is attributed to the excellent space charge storage stability of FEP and PTFE.

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Muralt, Paul. "Piezoelectric Thin Film Devices". Advances in Science and Technology 67 (październik 2010): 64–73. http://dx.doi.org/10.4028/www.scientific.net/ast.67.64.

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The field of piezoelectric thin films for micro and nano systems combines an exciting richness of potential applications with many attractive scientific topics on materials processing and physical properties. Piezoelectricity transforms a mechanical stimulus into an electrical signal, or electrical energy. Miniature thin film devices detect and measure vibrations and acoustic waves, as well as generate electrical power in the mW range by the harvesting of vibration energy. An electrical stimulus can be applied to generate acoustic waves, to damp actively vibrations detected by the same film, or to drive a micro robot. The ability to act in both directions of transfer between mechanical and electrical energy allows for high-performing filters, oscillators, and gravimetric sensors working at frequencies up to10 to 20 GHz. While rigid piezoelectric thin films like AlN excel in GHz applications such as RF filters, ferroelectric thin films like Pb(Zr,Ti)O3 are more efficient in energy conversion and include as further dimension a programmable polarity, which is useful for memory applications.

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Sambri, A., D. Isarakorn, A. Torres-Pardo, S. Gariglio, Pattanaphong Janphuang, D. Briand, O. Stéphan i in. "Epitaxial Piezoelectric Pb(Zr0.2Ti0.8)O3 Thin Films on Silicon for Energy Harvesting Devices". Smart Materials Research 2012 (22.04.2012): 1–7. http://dx.doi.org/10.1155/2012/426048.

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We report on the properties of ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films grown epitaxially on (001) silicon and on the performance of such heterostructures for microfabricated piezoelectric energy harvesters. In the first part of the paper, we investigate the epitaxial stacks through transmission electron microscopy and piezoelectric force microscopy studies to characterize in detail their crystalline structure. In the second part of the paper, we present the electrical characteristics of piezoelectric cantilevers based on these epitaxial PZT films. The performance of such cantilevers as vibration energy transducers is compared with other piezoelectric harvesters and indicates the potential of the epitaxial approach in the field of energy harvesting devices.

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Gerasimov D. I., Kuryndin I. S., Lavrentyev V. K., Volgina E. A., Temnov D. E. i Elyashevich G. K. "Structure formation and depolarization relaxation processes in porous piezoactive polyvinylidene fluoride films". Physics of the Solid State 64, nr 10 (2022): 1432. http://dx.doi.org/10.21883/pss.2022.10.54232.389.

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Piezoactive porous polyvinylidene fluoride films prepared in the process based on melt extrusion with subsequent isometric annealing, uniaxial extension and thermal fixation have been studied. It was shown that two competing orientation processes -polymorphous transition of non-polar α-phase into polar piezoactive β-phase and formation of porous structure - occur during the uniaxial extension of annealed films. It has been established that orientation degree of extruded films is the key factor determining the efficiency of both processes. Thermally stimulated depolarization method was used to investigate the dipole relaxation in oriented films, and activation energy of these processes was found. The films were polarized using corona discharge and high-voltage contact methods, both, and the dependence of piezoelectric modulus on the polarization conditions has been obtained. The maximum value of piezoelectric modulus d31=30.1 pC/N was achieved by polarization of films in corona discharge method. Keywords: polyvinylidene fluoride, porous films, supramolecular structure, piezoelectric properties, polarization, relaxation processes.

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Hintermueller, Dane, i Ravi Prakash. "Comprehensive Characterization of Solution-Cast Pristine and Reduced Graphene Oxide Composite Polyvinylidene Fluoride Films for Sensory Applications". Polymers 14, nr 13 (22.06.2022): 2546. http://dx.doi.org/10.3390/polym14132546.

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Pristine and doped polyvinylidene fluoride (PVDF) are actively investigated for a broad range of applications in pressure sensing, energy harvesting, transducers, porous membranes, etc. There have been numerous reports on the improved piezoelectric and electric performance of PVDF-doped reduced graphene oxide (rGO) structures. However, the common in situ doping methods have proven to be expensive and less desirable. Furthermore, there is a lack of explicit extraction of the compression mode piezoelectric coefficient (d33) in ex situ rGO doped PVDF composite films prepared using low-cost, solution-cast processes. In this work, we describe an optimal procedure for preparing high-quality pristine and nano-composite PVDF films using solution-casting and thermal poling. We then verify their electromechanical properties by rigorously characterizing β-phase concentration, crystallinity, piezoelectric coefficient, dielectric permittivity, and loss tangent. We also demonstrate a novel stationary atomic force microscope (AFM) technique designed to reduce non-piezoelectric influences on the extraction of d33 in PVDF films. We then discuss the benefits of our d33 measurements technique over commercially sourced piezometers and conventional piezoforce microscopy (PFM). Characterization outcomes from our in-house synthesized films demonstrate that the introduction of 0.3%w.t. rGO nanoparticles in a solution-cast only marginally changes the β-phase concentration from 83.7% to 81.7% and decreases the crystallinity from 42.4% to 37.3%, whereas doping increases the piezoelectric coefficient by 28% from d33 = 45 pm/V to d33 = 58 pm/V, while also improving the dielectric by 28%. The piezoelectric coefficients of our films were generally higher but comparable to other in situ prepared PVDF/rGO composite films, while the dielectric permittivity and β-phase concentrations were found to be lower.

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Pan, Feng, Xue Jing Liu, Yu Chao Yang, Cheng Song i Fei Zeng. "Multiferroic and Piezoelectric Behavior of Transition-Metal Doped ZnO Films". Materials Science Forum 620-622 (kwiecień 2009): 735–40. http://dx.doi.org/10.4028/www.scientific.net/msf.620-622.735.

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In this paper, we report the multiferroic and piezoelectric behavior observed in transition-metal doped ZnO films. The experimental results indicated that the Co-doped ZnO films deposited by magnetron sputtering possess a Curie temperature higher than 700K, and the magnetic moments of Co are intimatedly correlated to the doping concentration and the substrate. A giant magnetic moment of 6.1 B/Co is observed in (4 at.%) Co-doped ZnO films. Ferroelectric and ferromagnetic behaviors simultaneously were also obtained in V and Cr doped ZnO films on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method, revealing a multiferroic nature. The high piezoelectric d33 coefficient 80-120 pm/V has also been achieved by Cr and V substitutions, which could make Cr-doped or V-doped ZnO a promising material in piezoelectric devices.

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Ratanapreechachai, P., i I. Kanno. "P-OS4-2 Fabrication and characterization of lead-free piezoelectric thin films". Proceedings of the Symposium on Micro-Nano Science and Technology 2012.4 (2012): 273–74. http://dx.doi.org/10.1299/jsmemnm.2012.4.273.

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